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14 Apr 1986

Volume 48, Issue 15, pp. 957-1021


Polarization switching in a strip grating coupled optically pumped submillimeter laser

L. B. Whitbourn, J. C. Macfarlane, I. S. Falconer, B. W. James, and P. A. Stimson

Appl. Phys. Lett. 48, 957 (1986); http://dx.doi.org/10.1063/1.96623 (3 pages) | Cited 3 times

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It is shown that an optically pumped formic acid laser operating at 394 or 433 μm can lase on two sets of nondegenerate orthogonally polarized modes when a strip grating output coupler is used. The laser output polarization can be switched from parallel to perpendicular to the strips by a small cavity length change which is in accordance with calculated reflection phase changes of the grating for the two polarizations. For 30 W pump power ∼5 mW can be obtained at 394 μm in either polarization when the grating strips are oriented perpendicular to the pump polarization.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.79.Dj Gratings
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

High power, high intensity CO infrared laser transmission through As2S3 glass fibers

Shun‐ichi Sato, Shusuke Watanabe, Tomoo Fujioka, Mitsunori Saito, and Shiro Sakuragi

Appl. Phys. Lett. 48, 960 (1986); http://dx.doi.org/10.1063/1.97017 (3 pages) | Cited 5 times

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Optical power transmission of 5‐μm band CO laser beam through As2S3 glass core Teflon fluorinated ethylene propylene clad fibers is described. The maximum transmitted power is as high as 62 W with a 700‐μm core diameter fiber, which corresponds to a power intensity of 16 kW/cm2 at the fiber output end. The influence of fiber bending on the transmission characteristics is also reported.
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42.81.Dp Propagation, scattering, and losses; solitons
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Lt Gas lasers including excimer and metal-vapor lasers

GexSi1−x strained‐layer superlattice waveguide photodetectors operating near 1.3 μm

H. Temkin, T. P. Pearsall, J. C. Bean, R. A. Logan, and S. Luryi

Appl. Phys. Lett. 48, 963 (1986); http://dx.doi.org/10.1063/1.96624 (3 pages) | Cited 103 times

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Properties of GexSi1−x strained‐layer p‐i‐n detectors, in which the strained‐layer superlattice itself was used as an absorption region, have been studied for the first time. These devices were grown on (100)Si by molecular beam epitaxy. Using waveguide geometry we have obtained internal quantum efficiencies on the order of 40% at 1.3 μm in superlattices with the Ge fraction x=0.6. The superlattice detectors show the frequency response bandwidth of over 1 GHz and uniformly excellent electrical characteristics for values of x as large as 0.8.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
75.20.Ck Nonmetals
85.30.De Semiconductor-device characterization, design, and modeling

Direct frequency modulation of vapor phase transported, distributed feedback semiconductor lasers

R. S. Vodhanel, N. K. Cheung, and T. L. Koch

Appl. Phys. Lett. 48, 966 (1986); http://dx.doi.org/10.1063/1.96625 (3 pages) | Cited 3 times

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The frequency modulation (FM) due to injection current modulation of vapor phase transported distributed feedback (VPT DFB) semiconductor lasers is measured as a function of modulation frequency from 10 kHz to 1 GHz. A large frequency modulation response of 350 MHz/mA is obtained for the modulation frequency range of 10 to 1000 MHz. Demodulation of optical frequency shift keying (FSK) at 560 Mb/s is demonstrated, indicating that frequency modulation due to thermal modulation does not pose a significant limitation at this bit rate or higher. The large FM response together with modulation bandwidths up to 8 GHz makes the VPT DFB laser an attractive source for high bit rate optical FSK transmission.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Observations of the Rayleigh–Taylor instability in laser imploded microballoons

J. S. Wark, J. D. Kilkenny, A. J. Cole, M. H. Key, and P. T. Rumsby

Appl. Phys. Lett. 48, 969 (1986); http://dx.doi.org/10.1063/1.96626 (3 pages) | Cited 22 times

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Mass‐modulated plastic microballoons have been ablatively imploded by green (0.53 μm) laser light at an absorbed irradiance of 2×1013 W cm−2. Temporally growing spikes are seen on the outside surface of the target; evidence of the occurrence of mass redistribution indicates that the spikes are due to the Rayleigh–Taylor instability. A growth rate of 0.52±0.06 of classical has been inferred.
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52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.38.-r Laser-plasma interactions
52.40.Hf Plasma-material interactions; boundary layer effects

Electron spin resonance of [111], [111], and [111] oriented dangling orbital Pb0 defects at the (111) Si/SiO2 interface

A. Stesmans

Appl. Phys. Lett. 48, 972 (1986); http://dx.doi.org/10.1063/1.96627 (3 pages) | Cited 41 times

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The observation of (111) Si/SiO2 interface Pb0 defects (modeled as 0Si≡Si3) with dangling bonds positioned along [111], [111], and [111] from low‐temperature (T≲30 K) electron spin resonance measurements is reported. This is connected with the particular structure (SiOx) of the attendant very near‐Si interfacial transition region for the oxidation method invoked. Some instructive information as to the precise atomic modeling of the Si/SiO2 interface is inferred.
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68.35.Dv Composition, segregation; defects and impurities
76.30.Mi Color centers and other defects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.-b Surface treatments

Dependence of lattice parameter on elastic strain and composition in undoped Czochralski grown GaAs

Yasumasa Okada, Yozo Tokumaru, and Yoshinori Kadota

Appl. Phys. Lett. 48, 975 (1986); http://dx.doi.org/10.1063/1.96628 (3 pages) | Cited 16 times

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By precise measurement of the spatial variation in the lattice parameters of {001} undoped Czochralski grown gallium arsenide wafers, it was found that the lattice parameters are strongly dependent upon elastic strain and not so much on the melt composition. Although a remarkable spatial variation in the lattice parameters of ±5×10−6 nm from the average value was observed in a wafer specimen, the variation was considerably reduced to ±2×10−6 nm by dividing the wafer into small specimens. The lattice parameter variation was smaller than 2×10−6 nm due to a change in the As composition ratio from 0.42 to 0.52 in the melt.
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61.66.Fn Inorganic compounds
61.72.jd Vacancies
61.72.jj Interstitials
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
81.10.Fq Growth from melts; zone melting and refining

Current drift mechanism in In0.53Ga0.47As depletion mode metal‐insulator field‐effect transistors

M. Taillepied and S. Gourrier

Appl. Phys. Lett. 48, 978 (1986); http://dx.doi.org/10.1063/1.96629 (3 pages) | Cited 5 times

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A study of current drift phenomena of InGaAs depletion mode metal‐insulator field‐effect transistors fabricated with plasma enhanced chemical vapor deposited Si3N4 is reported for the first time. The data indicate that the current varies logarithmically versus time and that the capture mechanism does not depend on temperature. A strong correlation is demonstrated between the amplitude of the hysteresis of C(V) curves measured on metal‐insulator‐semiconductor devices and the total oxide thickness located between the deposited dielectric film and the InGaAs layer. This behavior suggests that states situated in this native oxide layer are responsible for the current drift. Moreover, these states are energetically distributed in the band gap of InGaAs.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.20.-r Electron states at surfaces and interfaces

Preprocessing heat treatment of metal‐insulator‐semiconductor solar cells

Dick Y. F. Wong and Y. W. Lam

Appl. Phys. Lett. 48, 981 (1986); http://dx.doi.org/10.1063/1.96630 (2 pages) | Cited 1 time

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Degradation in performance is reported of metal‐insulator‐semiconductor solar cells after isochronal and isothermal preprocessing heat treatment. Apart from the bulk lifetime degradation, an enhanced surface recombination is also observed. This is believed to be the first time that degradation in cell performance is reported which is solely due to the heat treatment and not related to the effect of diffusion.
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84.60.Jt Photoelectric conversion
85.30.Hi Surface barrier, boundary, and point contact devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Chloride vapor phase epitaxial growth of a Ga0.52In0.48P/GaAs heterostructure with an abrupt heterointerface

Masataka Hoshino, Kunihiko Kodama, Kuninori Kitahara, Junji Komeno, and Masashi Ozeki

Appl. Phys. Lett. 48, 983 (1986); http://dx.doi.org/10.1063/1.96631 (3 pages) | Cited 4 times

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Chloride vapor phase epitaxy of Ga0.52In0.48P/GaAs was studied using a reactor with two growth chambers. We have obtained high‐purity epitaxial layers of both GaInP and GaAs. For the growth of a heterostructure with an abrupt interface, the optimum growth condition was investigated in detail. Abruptness of the heterointerface was investigated by observing the two‐dimensional electron gas at the heterointerface of Ga0.52In0.48P/GaAs by the Hall and Shubnikov–de Haas measurements.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Low‐temperature annealed contacts to very thin GaAs epilayers

W. Patrick, W. S. Mackie, S. P. Beaumont, and C. D. W. Wilkinson

Appl. Phys. Lett. 48, 986 (1986); http://dx.doi.org/10.1063/1.96632 (3 pages) | Cited 4 times

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A low‐temperature annealing process has been developed for the fabrication of low resistivity ohmic contacts to very thin (<0.2 μm) n+ GaAs epilayers. It is shown that by altering the relative amounts of Ni in the commonly used AuGe/Ni/Au contact system, the anneal temperature can be reduced from the standard 420–450 °C to 320 °C or less without deterioration in specific contact resistance. The specific contact resistances were evaluated using the modified transmission line model.
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73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential

Quadratic electro‐optic light modulation in a GaAs/AlGaAs multiquantum well heterostructure near the excitonic gap

M. Glick, F. K. Reinhart, G. Weimann, and W. Schlapp

Appl. Phys. Lett. 48, 989 (1986); http://dx.doi.org/10.1063/1.96633 (3 pages) | Cited 37 times

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The electro‐optic effect has been investigated in a GaAs/AlGaAs multiquantum well waveguide structure 50 meV from the excitonic transition. We extract r41=−1.6×10−10 cm/V and (R11−R12)=6×10−16 cm2/V2, nonlinear optical characteristics that differ from homogeneous GaAs layers. This (R11−R12) value is similar in magnitude but opposite in sign to that found in InGaAsP 130 meV from the band gap.
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78.20.Jq Electro-optical effects
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

Picosecond recombination of charged carriers in GaAs

D. G. McLean, M. G. Roe, A. I. D’Souza, and P. E. Wigen

Appl. Phys. Lett. 48, 992 (1986); http://dx.doi.org/10.1063/1.96634 (2 pages) | Cited 17 times

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The recombination kinetics of charged carriers in GaAs have been investigated on a picosecond time scale. A pump‐probe technique was used to measure reflectivity changes as a function of time up to 900 ps. Initially, (1.2±0.2)×1020 carriers/cm3 were excited into the conduction band. The decay curve indicated dominance of a three‐body (Auger) recombination process up to about 120 ps, with two‐body recombination processes dominating after 120 ps, the switch occurring at a carrier concentration of (5±2)×1019 carriers/cm3. Values for the Auger recombination coefficient and the two‐body recombination coefficient were determined to be (7±4)×10−31 cm6 s−1 and (3.4±1.7)×10−11 cm3 s−1, respectively. The change in reflectance was observed to have essentially returned to zero within 900 ps.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
07.60.Hv Refractometers and reflectometers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
85.60.-q Optoelectronic devices

Anomalous temperature dependence of lattice parameters of metalorganic chemical vapor deposition CdTe grown on GaAs

J.‐L. Staudenmann, R. D. Horning, R. D. Knox, D. K. Arch, and J. L. Schmit

Appl. Phys. Lett. 48, 994 (1986); http://dx.doi.org/10.1063/1.96635 (3 pages) | Cited 2 times

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It is reported that the lattice parameters of a 3‐μm‐thick [1,0,0] single crystal CdTe epitaxial layer on a [1,0,0] single crystal GaAs substrate behave anomalously below 120 K. The epilayer used in this experiment was deposited at 410 °C by metalorganic chemical vapor deposition. This x‐ray lattice parameter study was done in the temperature range between about 8 and 300 K. Our results show that the lattice parameters perpendicular to the surface of both the GaAs substrate and the CdTe epilayer shrink four times more than the corresponding bulks when the samples are cooled down to 10 K. It is further seen that there is no compensation effect between the elements of the composite system; that is, the lattice parameters of the two materials change in the same direction as if the composite system—the epilayer and the thickness of the substrate which is probed by the x rays—would behave as a new material with entirely new physical properties.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Metastability and polarization effects in a pn heterojunction device due to deep states

Michael Stavola, F. Capasso, J. C. Nabity, K. Alavi, and A. Y. Cho

Appl. Phys. Lett. 48, 997 (1986); http://dx.doi.org/10.1063/1.96636 (3 pages) | Cited 9 times

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Unusual metastable and polarization behavior has been observed for Al0.48In0.52As/ Ga0.47In0.53As avalanche photodiodes by capacitance spectroscopy. The metastability arises from interplay of the heterojunction barrier with defects in the Al0.48In0.52As layer. Defect occupation controls the reverse bias characteristics of the device while the heterojunction presents a barrier to carrier capture by the defects.
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85.60.Dw Photodiodes; phototransistors; photoresistors
78.40.Fy Semiconductors
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Configurationally multistable defect in silicon

A. Chantre and L. C. Kimerling

Appl. Phys. Lett. 48, 1000 (1986); http://dx.doi.org/10.1063/1.96669 (3 pages) | Cited 48 times

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We report the isolation of a new defect in n‐type silicon following room‐temperature electron irradiation. Using deep level transient spectroscopy (DLTS) combined with minority‐carrier injection at 250 K, we show that the DLTS peak usually ascribed to the phosphorus‐vacancy pair hides a signal arising from this defect in its stable configuration. We find that the defect can exist in three other configurations which can be individually studied by DLTS. It is proposed that this defect involves a lattice vacancy and a phosphorus atom, plus a third unidentified defect or impurity.
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78.40.Fy Semiconductors
61.80.Fe Electron and positron radiation effects
61.72.jd Vacancies
61.72.jj Interstitials
61.72.Bb Theories and models of crystal defects

Frequency and power limit of quantum well oscillators

B. Jogai, K. L. Wang, and K. W. Brown

Appl. Phys. Lett. 48, 1003 (1986); http://dx.doi.org/10.1063/1.96617 (3 pages) | Cited 11 times

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The maximum frequency at which amplification can be obtained from quantum well oscillators is discussed. Intrinsically, the frequency limit for having negative differential resistance (NDR) can be very high, of the order of the inverse of the electron transit time. Owing to the large capacitance of the well and barrier regions, the actual frequency limit at which amplification occurs may be lower than the intrinsic limit because of the capacitance charging time. We have estimated the frequency limit of NDR by considering the electron transit time and have calculated the maximum oscillation frequency from an equivalent circuit model. We have also obtained an expression for the high‐frequency power output as a function of frequency, based on a transmission line model.
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84.30.Ng Oscillators, pulse generators, and function generators
85.30.-z Semiconductor devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling

Amorphous silicon p‐i‐n‐i‐p and n‐i‐p‐i‐n diodes

Joseph Dresner

Appl. Phys. Lett. 48, 1006 (1986); http://dx.doi.org/10.1063/1.96618 (3 pages) | Cited 4 times

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This letter describes the preparation and electrical characteristics of a‐Si:H p‐i‐n‐i‐p and n‐i‐p‐i‐n thin‐film diodes suitable for driving monochrome liquid crystal displays with more than 500 lines. The symmetrical current‐voltage curves in the reverse breakdown regime can be described by i=i0 exp(E/E0), where E0≂9×104 V/cm. In the range 20–125 °C, the current is thermally activated with an energy of 0.25 eV. The response time to applied voltage pulses is ≤10 μs. The stability of the electrical characteristics is adequate for at least 104 h of operation in a liquid crystal display. Electrical characteristics indicate that the reverse breakdown current is a tunneling current injected into the i layer and that electrons are likely to be dominant.
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73.40.Ty Semiconductor-insulator-semiconductor structures
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
73.40.Ei Rectification
85.60.Pg Display systems

Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wells

F. Voillot, A. Madhukar, J. Y. Kim, P. Chen, N. M. Cho, W. C. Tang, and P. G. Newman

Appl. Phys. Lett. 48, 1009 (1986); http://dx.doi.org/10.1063/1.96619 (3 pages) | Cited 38 times

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We report on comparative photoluminescence (PL) studies of GaAs/Al0.33Ga0.67As single quantum well structures grown via molecular beam epitaxy under identical growth conditions employing (a) customary practice of no growth interruption and (b) growth interruption. The growth conditions themselves are chosen to be near optimum, as determined from the growth kinetics exemplified by the reflection high‐energy electron diffraction intensity dynamics. Results show PL lines with fine structure and widths among the narrowest ever reported for 28.3 and 56.6 Å wells. The fine structure is indicative of kinetically controlled interfaces with a predominant step height of one atomic layer and the linewidths a first measurement of intrinsic alloy disorder scattering.
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78.40.Fy Semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
75.20.Ck Nonmetals

Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing

C. M. Gronet, J. C. Sturm, K. E. Williams, J. F. Gibbons, and S. D. Wilson

Appl. Phys. Lett. 48, 1012 (1986); http://dx.doi.org/10.1063/1.96620 (3 pages) | Cited 27 times

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Limited reaction processing was used to deposit ultrathin, highly doped layers of epitaxial silicon. Multilayer structures consisting of alternating undoped and heavily boron‐doped regions were fabricated in situ. The interlayer doping profiles of these structures, as determined by secondary ion mass spectroscopy, are abrupt. Van der Pauw measurements indicate that the electrical characteristics of the p+ epitaxial films are comparable to bulk material.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Proton isolated In0.2Ga0.8As/GaAs strained‐layer superlattice avalanche photodiode

G. E. Bulman, D. R. Myers, T. E. Zipperian, and L. R. Dawson

Appl. Phys. Lett. 48, 1015 (1986); http://dx.doi.org/10.1063/1.96621 (3 pages) | Cited 12 times

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We have fabricated the first proton isolated strained‐layer superlattice (SLS) avalanche photodiode. The grown In0.2Ga0.8As/GaAs p+n SLS structure was bombarded outside the active region with 220 keV protons to a total dose of 1×1015cm−2. These first nonoptimized devices exhibit a breakdown voltage of 23.5 V with a dark current density of 1.3×10−3A/cm2 at 90% of the breakdown voltage. The isolation is stable under annealing for 10 min at 350 °C. Uniform photoresponse is observed across the active region with two order of magnitude reduction in response occurring in the isolation region. A peak uncoated external quantum efficiency of 25% at 910 nm is observed with 10 V reverse bias and photocurrent multiplication is observed at higher bias values. These results demonstrate that proton isolation can be successfully applied to strained‐layer systems and can be incorporated in useful device structures.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.40.+w Photoconduction and photovoltaic effects

Visible‐laser photodeposition of chromium oxide films and single crystals

C. Arnone, M. Rothschild, J. G. Black, and D. J. Ehrlich

Appl. Phys. Lett. 48, 1018 (1986); http://dx.doi.org/10.1063/1.96622 (3 pages) | Cited 15 times

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Visible‐laser deposition reactions of the chromyl chloride vapor, CrO2Cl2, have been developed for direct writing of chromium oxides. Deposition at low laser power is by photolysis of adsorbed CrO2Cl2 molecules. Higher powers initiate deposition photochemically and continue it with a combined photolytic/pyrolytic reaction, simultaneously inducing a solid phase conversion of the deposited film. Mixed Cr2O3/CrO2 thin films of 1 nm to several micrometer thickness, as well as 1‐mm‐long single crystals of Cr2O3, were grown, the latter at rates up to 3 μm/s. The thin films are strongly ferromagnetic. Mass spectrometer and optical transmission measurements show that surface kinetics dominate the nucleation and growth rates.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Nq Composition and phase identification
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
33.80.Gj Diffuse spectra; predissociation, photodissociation
FREE

Erratum: Electron‐hole recombination at the Si‐SiO2 interface [Appl. Phys. Lett. 48, 245 (1986)]

E. Yablonovitch, R. M. Swanson, W. D. Eades, and B. R. Weinberger

Appl. Phys. Lett. 48, 1021 (1986); http://dx.doi.org/10.1063/1.97037 (1 page) | Cited 1 time

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Abstract Unavailable
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species
99.10.Cd Errata
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