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21 Apr 1986

Volume 48, Issue 16, pp. 1027-1105

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Narrow‐stripe metal‐clad ridge‐waveguide laser for 1.3 μm wavelength

Markus‐Christian Amann and Bernhard Stegmüller

Appl. Phys. Lett. 48, 1027 (1986); http://dx.doi.org/10.1063/1.96637 (3 pages) | Cited 9 times

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Metal‐clad ridge‐waveguide lasers with stripe widths between 1.5 and 3 μm have been developed in InGaAsP‐InP for 1.3 μm wavelength. By an appropriate design for these lasers, threshold currents as low as 20 mA are achieved for 200‐μm‐long cavities. The corresponding low heat dissipation enables cw operation of upside‐down mounted devices up to 85 °C heat sink temperature.
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42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Improvement of the bulk laser damage threshold of potassium dihydrogen phosphate crystals by ultraviolet irradiation

A. Yokotani, T. Sasaki, K. Yoshida, T. Yamanaka, and C. Yamanaka

Appl. Phys. Lett. 48, 1030 (1986); http://dx.doi.org/10.1063/1.96638 (3 pages) | Cited 26 times

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Potassium dihydrogen phosphate (KDP) crystals were grown under the irradiation of ultraviolet light. The bulk laser damage threshold was improved to two to three times (15–20 J/cm2) compared to the case of crystals grown by conventional methods. Microbes such as germs and bacteria are frequently generated in the KDP solution with the usual growth method. The ultraviolet light reduces or eliminates organic materials such as microbes or their carcasses incorporated into the crystal, which are the cause of low damage threshold.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.70.-a Optical materials
81.40.Tv Optical and dielectric properties related to treatment conditions
42.60.-v Laser optical systems: design and operation

1100× optical fiber pulse compression using grating pair and soliton effect at 1.319 μm

K. Tai and A. Tomita

Appl. Phys. Lett. 48, 1033 (1986); http://dx.doi.org/10.1063/1.96639 (3 pages) | Cited 16 times

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We report the first demonstration of two‐stage optical fiber pulse compression using the grating pair technique and, successively, the soliton effect. Firstly, 100 ps pulses from a 1.319‐μm mode‐locked neodymium:yttrium aluminum garnet laser are chirped by a 2‐km positive dispersion fiber (zero‐dispersion wavelength λ0=1.59 μm) and compressed into 2 ps pulses by a grating pair. Subsequently, the resultant 2 ps pulses are coupled into a 40‐m negative dispersion fiber (λ0=1.275 μm) and compressed further into 90 fs pulses via the pulse narrowing effect of high‐order soliton propagation. The combined compression factor of 1100 is the largest reported to date using optical fibers.
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42.81.Dp Propagation, scattering, and losses; solitons
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.65.Tg Optical solitons; nonlinear guided waves
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Pyroelectric effects in LiNbO3 channel‐waveguide devices

C. H. Bulmer, W. K. Burns, and S. C. Hiser

Appl. Phys. Lett. 48, 1036 (1986); http://dx.doi.org/10.1063/1.96640 (3 pages) | Cited 13 times

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The thermal stability of Ti‐indiffused LiNbO3 channel‐waveguide devices is described. In Z‐cut interferometers the pyroelectric effect causes large output instabilities. However, both Z‐cut directional couplers and X‐cut interferometers show good thermal stability. We discuss the pyroelectric effect and explain device thermal behavior. We describe the decay of induced voltage or of change in interferometer phase bias after a temperature change and deduce that LiNbO3 resistivities can be electric field dependent.
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42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators
77.70.+a Pyroelectric and electrocaloric effects
81.40.Rs Electrical and magnetic properties related to treatment conditions

Linewidth characteristics of fiber‐extended‐cavity distributed‐feedback lasers

K.‐Y. Liou, Y. K. Jhee, G. Eisenstein, R. S. Tucker, R. T. Ku, T. M. Shen, U. K. Chakrabarti, and P. J. Anthony

Appl. Phys. Lett. 48, 1039 (1986); http://dx.doi.org/10.1063/1.96641 (3 pages) | Cited 7 times

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A 1.55‐μm wavelength InGaAsP distributed feedback (DFB) laser with an antireflection coated facet has been coupled to a single‐mode fiber with a reflective end to construct a compact narrow‐linewidth source. The linewidth of the DFB laser is reduced by a factor of 1000 to 70 kHz at 1 mW output with a 5.5‐cm fiber length. The fiber mirror to DFB laser coupling parameters required for narrow‐linewidth operation are presented.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Observations of argon emission lines used for fluorine atom actinometry in low power rf discharges

S. E. Savas

Appl. Phys. Lett. 48, 1042 (1986); http://dx.doi.org/10.1063/1.96642 (3 pages) | Cited 21 times

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Anomalous power and frequency dependences of some argon emission lines are observed in a low power rf discharge in a 2% admixture of argon in CF4. Frequency ranges from 0.12 to 13.56 MHz for pressures of 25 and 50 mTorr and 20 W power to the plasma. Power and frequency dependences of the 7504 Å line differ from those for the 6416 Å, 6871 Å, and 7126 Å lines. These differences and argon excitation cross sections are used to examine the validity of actinometry assumptions. The 6871 Å or 6416 Å lines work better under these conditions as actinometer references, while the 7504 Å seems preferable for etch plasmas.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
34.80.Dp Atomic excitation and ionization

Laser produced percolation structures

M. Thuillard and M. von Allmen

Appl. Phys. Lett. 48, 1045 (1986); http://dx.doi.org/10.1063/1.96591 (3 pages) | Cited 6 times

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Pulsed laser irradiation of thin Ti films yields structures consisting of metallic islands connected by oxide filaments. The sheet resistivity of the structure is mostly determined by the degree of oxidation of the filaments and can be varied through the laser fluence. By adding gold to the initial layer, the same structures are obtained but oxidation is inhibited. The material is essentially a two‐dimensional bond percolator. The temperature coefficient of the resistance is drastically reduced compared to that of the previously investigated Ti‐TiOx structures.
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81.05.Bx Metals, semimetals, and alloys
73.61.At Metal and metallic alloys
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Cesium coverage on molybdenum due to cesium ion bombardment

G. S. Tompa, W. E. Carr, and M. Seidl

Appl. Phys. Lett. 48, 1048 (1986); http://dx.doi.org/10.1063/1.96592 (3 pages) | Cited 13 times

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Cesium coverage due to Cs+ bombardment of a polycrystalline molybdenum surface was investigated in the incident energy range below 500 eV. When the surface is exposed to a Cs+ beam the work function decreases until steady state is reached with a total dose of less than ≊1×1016 ions/cm2. The steady state work function reaches a minimum at an incident energy of ≊100 eV and slowly increases with bombarding energy. Cesium coverage of a target is proportional to the ratio (1−β)/γ, where β is the reflection coefficient and γ is the sputter yield. This ratio is large for molybdenum because of its low mass and high binding energy. Implications of these results for H− surface conversion sources are discussed.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
73.30.+y Surface double layers, Schottky barriers, and work functions
61.72.up Other materials
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative

Patterned aluminum growth via excimer laser activated metalorganic chemical vapor deposition

G. S. Higashi and C. G. Fleming

Appl. Phys. Lett. 48, 1051 (1986); http://dx.doi.org/10.1063/1.96593 (3 pages) | Cited 34 times

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Excimer laser photolysis of organoaluminum adlayers has been used to catalytically activate the deposition of Al via thermal decomposition of triisobutylaluminum. The process exhibits good spatial selectivity and patterns with 4 μm resolution have been accurately reproduced. Patterned Al metallizations have been performed on Si, SiO2, Al2O3, and GaAs substrates and show promise for practical applications. Electrical measurements probing Al/substrate interface quality indicate that this technique may be suitable for the fabrication of rectifying contacts on GaAs.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Ns Metal-nonmetal contacts
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Raman scattering as a quantitative tool for residual acceptor assessment in semi‐insulating GaAs

J. Wagner, H. Seelewind, and U. Kaufmann

Appl. Phys. Lett. 48, 1054 (1986); http://dx.doi.org/10.1063/1.96594 (3 pages) | Cited 24 times

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Electronic Raman scattering has been employed to characterize as‐grown semi‐insulating GaAs. All samples investigated exhibit electronic Raman signals from residual acceptors (carbon and/or zinc). The intensity of these signals varies by more than one order of magnitude from sample to sample. Comparative local vibrational mode measurements to determine the carbon content suggest a quantitative correlation with the carbon acceptor concentration. The detection limit for this Raman characterization is well below 1015 acceptors/cm3 for samples cut from 500‐μm‐thick standard wafer material. Spatially resolved studies show that the scattering intensity fluctuates significantly across a 2‐in. GaAs wafer.
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78.40.Fy Semiconductors
78.30.Hv Other nonmetallic inorganics
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Pulsed electron beam annealing of phosphorus‐implanted CuInS2

J. L. Lin, J. T. Lue, M. H. Yang, and H. L. Hwang

Appl. Phys. Lett. 48, 1057 (1986); http://dx.doi.org/10.1063/1.96595 (3 pages) | Cited 7 times

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Pulsed electron beam annealing of phosphorus‐implanted CuInS2 has been found to be an efficient method in p‐type doping of CuInS2. A sheet resistance as low as 10.1 Ω/☒, a sheet carrier concentration as high as 2.6×1016 cm−2, and a hole mobility as high as 499 cm2/V s have been obtained. The irradiation energy density for the best doping condition was determined to be in the range ∼11–13 J/cm2. Using Van der Pauw/Hall technique in conjunction with a chemical etching technique, effective carrier concentration profiles have been determined with a maximum carrier concentration of 9×1019 cm−3. Excellent p‐n CuInS2 homojunctions have been fabricated by electron beam pulse annealing with an ideality factor of 1.75.
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61.72.up Other materials
73.25.+i Surface conductivity and carrier phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.80.Fe Electron and positron radiation effects

Temperature dependence of electron mobility in (InAs)3(GaAs)1 superlattices

Y. Matsui, H. Hayashi, and K. Yoshida

Appl. Phys. Lett. 48, 1060 (1986); http://dx.doi.org/10.1063/1.96596 (3 pages) | Cited 15 times

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(InAs)3(GaAs)1 superlattices have been obtained successfully by the beam separation method of molecular beam epitaxy. The superlattice structure has been confirmed by lattice images and satellite spots of transmission electron microscopy. The electron mobilities of the superlattices are higher than those of InxGa1−xAs alloys at high temperature. The electron mobility of superlattices with the carrier density of 3.3×1017 cm−3 is 6000 cm2/V s at 400 K, which is about 20% higher than that of InxGa1−xAs ternary alloys with higher In mole fraction (x=0.9).
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72.20.Fr Low-field transport and mobility; piezoresistance
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Ey III-V and II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Pulse diffusion of Ge into GaAs

S. D. Lester, C. W. Farley, T. S. Kim, B. G. Streetman, and J. M. Anthony

Appl. Phys. Lett. 48, 1063 (1986); http://dx.doi.org/10.1063/1.96597 (3 pages) | Cited 6 times

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The diffusion of Ge into GaAs from a thin elemental source using rapid thermal processing has been investigated. Several types of encapsulants and substrates have been examined. The diffusion and activation of Ge have been found to depend on both the encapsulant and substrate growth conditions. Photoluminescence spectroscopy indicates that Ga vacancies may control dopant diffusion and activation. Very shallow n+ junctions and nonalloyed ohmic contacts to semi‐insulating GaAs have been formed.
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66.30.J- Diffusion of impurities
78.40.Fy Semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Noninvasive sheet charge density probe for integrated silicon devices

H. K. Heinrich, D. M. Bloom, and B. R. Hemenway

Appl. Phys. Lett. 48, 1066 (1986); http://dx.doi.org/10.1063/1.96598 (3 pages) | Cited 26 times

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See Also: Erratum

Show Abstract
We report a sensitive new technique for probing dynamic sheet charge density variations in integrated silicon devices. Using a specially designed noninvasive Nomarski phase contrast interferometer a sheet charge density sensitivity of 2.6×108 e/cm2/(Hz)1/2 is extracted from experimental data for 1 mA of detected photocurrent. This charge density sensitivity makes possible μV signal level detection in an active device, and with digital signals the corresponding signal/noise level is sufficiently high that multimegabaud data can be captured in real time.
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85.60.Dw Photodiodes; phototransistors; photoresistors
07.60.Ly Interferometers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
85.30.De Semiconductor-device characterization, design, and modeling

Molecular beam epitaxial growth and characterization of a novel superlattice system: Hg1−xCdxTe‐CdTe

J. Reno, I. K. Sou, P. S. Wijewarnasuriya, and J. P. Faurie

Appl. Phys. Lett. 48, 1069 (1986); http://dx.doi.org/10.1063/1.96599 (3 pages) | Cited 10 times

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Hg1−xCdxTe‐CdTe superlattices of both type I and type III have been grown for the first time using the molecular beam epitaxy technique. The superlattices were grown at 190 °C. They have been characterized by electron and x‐ray diffraction, infrared transmission, and Hall measurements. The presence of satellite peaks in the x‐ray spectra shows the superlattices to be of high quality. Infrared transmission spectra show that HgCdTe‐CdTe superlattices have narrower band gaps than equivalent HgCdTe alloys. These superlattices are p type. Their Hall characterizations, along with magnetotransport experiments, seem to indicate that high hole mobilities observed in p‐type HgTe‐CdTe superlattices are due to some type of relationship between the two‐dimensional heavy hole gas and the interface state existing in type III superlattices.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals

Auger depth profiling of Ag layer epitaxially grown on Pb(111) surface: A direct evidence of substrate diffusion

C. H. Chen and F. J. Sansalone

Appl. Phys. Lett. 48, 1072 (1986); http://dx.doi.org/10.1063/1.96600 (3 pages) | Cited 2 times

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Auger depth profiling of an Ag layer grown epitaxially on a Pb(111) surface shows that constant diffusion of Pb occurs and a saturated ordered monolayer of Pb is finally formed on the Ag/vacuum interface. The surface concentration of Pb is found to increase exponentially as a function of time, after the sputtering ion beam was turned off. The time constant of this phenomenon (∼15 s–2.5 min) is dependent on the length of the ion sputtering time and the thermal annealing of the sample prior to the depth profiling. The diffusivity is estimated to be in the range of 2.1×10−12–2.1×10−13 cm2/s at room temperature.
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68.35.Fx Diffusion; interface formation
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.Dv Composition, segregation; defects and impurities
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Channeling radiation from strained‐layer superlattices

Anand P. Pathak and Prasanna K. John Balagari

Appl. Phys. Lett. 48, 1075 (1986); http://dx.doi.org/10.1063/1.96601 (2 pages) | Cited 8 times

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Possibility to study strained‐layer superlattices by observing channeling radiation emitted by relativistic positrons channeled along major crystallographic planes is investigated. A downward shift in the peak frequency and decrease in the linewidth of the channeling radiation peak are predicted.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.80.Fe Electron and positron radiation effects
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Quantum mechanical theory of linewidths of localized radiative transitions in semiconductor alloys

Jasprit Singh and K. K. Bajaj

Appl. Phys. Lett. 48, 1077 (1986); http://dx.doi.org/10.1063/1.96602 (3 pages) | Cited 56 times

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A quantum mechanical formalism to calculate the effect of compositional disorder on the linewidth of localized radiative transitions in semiconducting alloys is developed. A variational‐statistical approach is used to calculate the line broadening. The general theory is applied to the specific case of excitonic transitions in which the exciton is in the ground state. The linewidth as a function of alloy composition is derived and the results thus obtained are compared with those of previous theories. For illustration, the calculations are done for GaAlAs and the results are compared with the available low‐temperature photoluminescence data.
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71.70.-d Level splitting and interactions
71.20.-b Electron density of states and band structure of crystalline solids
71.35.-y Excitons and related phenomena
78.40.Fy Semiconductors

dc and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs pseudomorphic modulation‐doped field‐effect transistor

T. Henderson, J. Klem, C. K. Peng, J. S. Gedymin, W. Kopp, and H. Morkoç

Appl. Phys. Lett. 48, 1080 (1986); http://dx.doi.org/10.1063/1.96603 (3 pages) | Cited 10 times

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Extremely large current double interface GaAs/In0.15 Ga0.85 As/Al0.15 Ga0.85 As pseudomorphic modulation‐doped field‐effect transistors (MODFET’s) grown by molecular beam epitaxy were achieved. The 1‐μm gate devices studied have peak current levels (430 mA/mm at 300 K and 483 mA/mm at 77 K) roughly one and a half to two times that found in single interface pseudomorphic MODFET’s. These devices also retain high transconductances over a broad range of gate voltage, peaking at 312 mS/mm at 300 K and 362 mS/mm at 77 K. Further, excellent microwave performance is also obtained with a maximum frequency of oscillation ( fmax) of 37 GHz and a current gain cut‐off frequency of as high as 23 GHz at 300 K. An output power level of 14 dBm (1 dB gain compression) was obtained at 6 GHz for a 290‐μm gate width. This double interface single quantum well MODFET may be of great importance in millimeter wave power amplifiers.
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85.30.Tv Field effect devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Long wavelength GaSb photoconductive detectors grown on Si substrates

B. F. Levine, R. J. Malik, C. G. Bethea, and J. Walker

Appl. Phys. Lett. 48, 1083 (1986); http://dx.doi.org/10.1063/1.96604 (2 pages) | Cited 3 times

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We report the first long wavelength photoconductive detectors fabricated from GaSb epitaxially grown on Si substrates. Responsivities of 0.18 A/W are obtained at a wavelength of 1.5 μm.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.40.+w Photoconduction and photovoltaic effects
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Epitaxial growth of HgTe by precracking metalorganic mercury and tellurium compounds

C.‐H. Wang, P.‐Y. Lu, and L. M. Williams

Appl. Phys. Lett. 48, 1085 (1986); http://dx.doi.org/10.1063/1.96605 (2 pages) | Cited 10 times

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Diethyltelluride and dimethylmercury metalorganic sources were precracked for the expitaxial growth of HgTe on CdTe substrates. This method allows metalorganic sources to be decomposed at one temperature while epitaxial growth occurs at a different temperature that is lower. Therefore, the HgTe epitaxial growth can be performed at low temperature and low Hg partial pressure. The growth rate was around 2 μm/h for the growth temperature range 210–270 °C. The HgTe films are single crystalline and have good morphology. Room‐temperature carrier concentrations of 2×1017/cm3 and mobilities of 25 000 cm2/V s were obtained for epitaxial layers grown at 240 °C.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Photocurrent response times in undoped amorphous hydrogenated silicon

M. A. Parker and E. A. Schiff

Appl. Phys. Lett. 48, 1087 (1986); http://dx.doi.org/10.1063/1.96606 (3 pages) | Cited 6 times

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The influence of electrical contacts upon coplanar electrode photocurrent response times has been explored in undoped amorphous hydrogenated silicon (a‐Si:H) by measuring contact‐induced photocurrents in a virtual ground plane. The results indicate that the relatively long photocurrent response times observed in undoped a‐Si:H cannot be attributed to contacts. The response times are evidence that some deep‐lying defects in a‐Si:H are true electron photocarrier traps and not recombination centers. The discrepancy between long‐time coplanar and time‐of‐flight transient photocurrent measurements upon undoped a‐Si:H remains unresolved.
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72.40.+w Photoconduction and photovoltaic effects
72.80.Ng Disordered solids
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.40.Fy Semiconductors

Kinetics of arsenic activation and clustering in high dose implanted silicon

Avid Kamgar, F. A. Baiocchi, and T. T. Sheng

Appl. Phys. Lett. 48, 1090 (1986); http://dx.doi.org/10.1063/1.96607 (3 pages) | Cited 13 times

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We have observed a metastable state in activation of high dose arsenic implants into silicon. This state is marked by a local minimum in the sheet resistance which increases to a local maximum as the anneal time increases. Detailed sheet resistance data as well as Rutherford backscattering and transmission electron microscopy indicate that the initial minimum in sheet resistance is due to activation of arsenic atoms by occupying substitutional sites as the amorphous silicon recrystallizes. The subsequent clustering of arsenic atoms is the cause for the increase in the sheet resistance while the final drop is associated with the lateral diffusion of arsenic. We have studied this effect in the 850–1100 °C temperature range, and have obtained an activation energy of 1.1 eV for the clustering of arsenic atoms.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
61.72.uf Ge and Si
78.40.Fy Semiconductors
73.25.+i Surface conductivity and carrier phenomena

Effect of the silicon doping concentration on the recombination kinetics of DX centers in Al0.35Ga0.65As

N. S. Caswell, P. M. Mooney, S. L. Wright, and P. M. Solomon

Appl. Phys. Lett. 48, 1093 (1986); http://dx.doi.org/10.1063/1.96608 (3 pages) | Cited 39 times

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The recombination (electron capture) kinetics of the ionized DX center in AlxGa1−xAs have been measured as a function of temperature and silicon doping concentration. It is shown that for x≂0.35, the silicon concentration dependence of the recombination kinetics is dominated by effects of the electron distribution in the conduction band, and is insensitive to changes in the trap characteristics. In a model kinetic calculation consistent with the data the trap is found to capture through a level 0.202 eV from the bottom of the conduction band with a width of 0.045 eV, independent of DX center concentration.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
61.72.uf Ge and Si

High‐speed GaAs/AlGaAs photoconductive detector using a p‐modulation‐doped multiquantum well structure

K. Kaede, Y. Arakawa, P. Derry, J. Paslaski, and A. Yariv

Appl. Phys. Lett. 48, 1096 (1986); http://dx.doi.org/10.1063/1.96609 (2 pages) | Cited 2 times

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A new type of high‐speed GaAs/AlGaAs photoconductive detector utilizing the high drift velocity of minority electrons in a p‐modulation doped multiquantum well structure is demonstrated. In this modulation‐doped structure, the electron scattering is reduced, which leads to the enhancement of the electron (minority carrier) drift velocity which determines the response speed of the detector. A deconvolved pulse response as narrow as 33 ps full width at half‐maximum was obtained with an electric field of 3.1 kV/cm at room temperature.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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