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28 Apr 1986

Volume 48, Issue 17, pp. 1111-1168


Emission wavelength of AlGaAs‐GaAs multiple quantum well lasers

P. Blood, E. D. Fletcher, P. J. Hulyer, and P. M. Smowton

Appl. Phys. Lett. 48, 1111 (1986); http://dx.doi.org/10.1063/1.96613 (3 pages) | Cited 17 times

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We have recorded spontaneous emission spectra from multiple quantum well lasers grown by molecular beam epitaxy with 25‐Å‐wide GaAs wells by opening a window in the top contact stripe. These spectra have a low‐energy tail and consequently the gain spectra derived from them show that laser emission occurs at a lower photon energy than the lowest energy confined particle transition. The observed laser wavelength and threshold current are consistent with the position of the peak in the gain spectrum.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Demonstration of an all‐optical associative holographic memory

Amnon Yariv, Sze‐Keung Kwong, and Kazuo Kyuma

Appl. Phys. Lett. 48, 1114 (1986); http://dx.doi.org/10.1063/1.96614 (3 pages) | Cited 19 times

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We describe a new type of associative holographic memory and some related results. The memory can retrieve overlapping images which are stored in a volume hologram. The storage and retrieval of more than one image is demonstrated for the first time. The important role of thresholding in assuring ‘‘clean’’ retrieval is demonstrated.
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42.40.Ht Hologram recording and readout methods
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
42.30.Sy Pattern recognition
42.30.Va Image forming and processing

Laser‐stimulable transparent CsI:Na film for a high quality x‐ray imaging sensor

Tsuyoshi Kano, Tetsuhiko Takahashi, Kenichi Okajima, Keiji Umetani, Saburo Ataka, Hisatake Yokouchi, and Ryuichi Suzuki

Appl. Phys. Lett. 48, 1117 (1986); http://dx.doi.org/10.1063/1.96615 (2 pages) | Cited 4 times

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Transparent films, which can be stimulated by laser beams after x‐ray irradiation, have been searched to improve the spatial resolution of digital x‐ray imaging sensors. As a result, evaporated CsI:Na films are found to be efficiently laser stimulable around 77 K. The modulation transfer function (MTF) of the film is evaluated using a scanning Ga1−xAlxAs semiconductor laser. The high MTF value (57% at 2 1p/mm), strong x‐ray absorption, and high stimulation efficiency of the film ensure a high quality sensor for digital radiography.
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78.70.Dm X-ray absorption spectra
78.70.En X-ray emission spectra and fluorescence
42.30.Lr Modulation and optical transfer functions
07.85.-m X- and γ-ray instruments

Generation of high magnetic fields using a gas‐puff Z pinch

F. J. Wessel, F. S. Felber, N. C. Wild, H. U. Rahman, A. Fisher, and E. Ruden

Appl. Phys. Lett. 48, 1119 (1986); http://dx.doi.org/10.1063/1.96616 (3 pages) | Cited 17 times

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The imploding plasma column of a gas‐puff Z pinch was used to compress an embedded axial magnetic field. Field compression ratios up to 180 times and peak compressed fields up to 1.6 MG were measured by Faraday rotation. Field compression by this method has the advantage of high repetition rate for applications in the controlled production of high‐energy densities, solid‐state studies, generation of short‐wavelength radiation, reducing the ignition threshold for fusion, and particle acceleration.
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52.55.Ez Theta pinch
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Metal cluster size distributions during nozzle jet expansion

S.‐N. Yang and T.‐M. Lu

Appl. Phys. Lett. 48, 1122 (1986); http://dx.doi.org/10.1063/1.96443 (3 pages) | Cited 6 times

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The non‐steady‐state cluster growth during nozzle jet expansion is solved numerically based on the classical liquid‐drop theory. We showed that for the expansion geometry such as the one used in the ionized cluster beam system for depositing thin metal films [Yamada and Takagi, Thin Solid Films 80, 105 (1981)], cluster formation has already started under subsonic condition during the expansion. In our realistic calculation of the silver vapor expansion, cluster size up to more than 100 molecules can be formed.
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64.70.F- Liquid-vapor transitions
68.03.Fg Evaporation and condensation of liquids
47.60.Kz Flows and jets through nozzles
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Effect of HCl on silicon point defect formation during thermal oxidation of (100) float zone silicon wafers

Seajin Oh, W. A. Tiller, and SooKap Hahn

Appl. Phys. Lett. 48, 1125 (1986); http://dx.doi.org/10.1063/1.96444 (2 pages)

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The effect of HCl in an oxidizing ambient on Si interstitial formation during oxidation has been studied. Using an antimony buried marker in (100) Si wafers, self‐interstitial generation is directly observed via its influence on Sb diffusion. Adding HCl up to 6 vol % reduces the self‐interstitial flux generated at the oxidation front, but it does not completely eliminate it.
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61.72.Bb Theories and models of crystal defects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.J- Diffusion of impurities
81.65.-b Surface treatments

Voltage‐dependent plasticity in HgCdTe

Joseph Pellegrino and J. M. Galligan

Appl. Phys. Lett. 48, 1127 (1986); http://dx.doi.org/10.1063/1.96445 (2 pages) | Cited 1 time

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The effect of an applied, time‐varying voltage on the plastic behavior of (Hg,Cd)Te has been investigated. We observe that both positive and negative voltages suppress plasticity, with the negative voltage being more effective. The influence of this voltage polarity is strain dependent and provides information on the charge of the mobile dislocations.
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62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

Charge character of interface traps at the Si‐SiO2 interface

Noboru Shiono, Masakazu Shimaya, and Osaake Nakajima

Appl. Phys. Lett. 48, 1129 (1986); http://dx.doi.org/10.1063/1.96446 (3 pages) | Cited 15 times

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Interface traps in the upper half of a silicon band gap are acceptorlike. This is based on analyses of the shift in capacitance‐voltage curves due to positive bias‐temperature aging of metal‐oxide‐semiconductor capacitors fabricated on n‐ and p‐type substrates. The experimental results show that the interface traps in the upper half are generated without an increase in fixed oxide charges or interface traps in the lower half. The results also show that the flatband voltage shifts positively for n‐type capacitors, while it does not shift for p‐type capacitors.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Electron irradiation‐activated low‐temperature annealing of phosphorus‐implanted silicon

M. Miyao, A. Polman, W. Sinke, F. W. Saris, and R. van Kemp

Appl. Phys. Lett. 48, 1132 (1986); http://dx.doi.org/10.1063/1.96447 (3 pages) | Cited 6 times

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High‐energy (0.2–0.8 MeV, ≊1017 cm−2) electron irradiation‐stimulated solid phase regrowth of phosphorus‐implanted silicon layers has been observed in the temperature range 350–600 °C. The influence of electron irradiation on the annealing of an isolated damage layer and of a continuous amorphous layer is compared. An ionization effect is found to enhance annealing of trapping centers in the isolated damage region. In addition, a small enhancement of solid phase epitaxial regrowth of the continuous amorphous layer was found, attributed to an elastic displacement effect.
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61.80.Fe Electron and positron radiation effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Np Solid phase epitaxy; growth from solid phases

High‐field‐induced voltage‐dependent oxide charge

P. Olivo, B. Riccò, and E. Sangiorgi

Appl. Phys. Lett. 48, 1135 (1986); http://dx.doi.org/10.1063/1.96448 (3 pages) | Cited 12 times

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In this work, we investigate the effects of nondisruptive high‐field stress on the tunneling characteristics of thin SiO2 films (<100 Å) and show that after the stress the charge trapped within the oxide reversibly depends on the applied voltage. This is explained with a model where electrons tunnel in and out of trap states located near the injecting interface. Consequently, the trap occupation, hence oxide charge, is determined by transmission coefficients that strongly depend on the actual oxide potential.
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73.61.Ng Insulators
73.40.Gk Tunneling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.40.Rs Electrical and magnetic properties related to treatment conditions

Optical behavior of the U band in relation to EL2 and EL6 levels in boron‐implanted GaAs

J. Samitier, J. R. Morante, L. Giraudet, and S. Gourrier

Appl. Phys. Lett. 48, 1138 (1986); http://dx.doi.org/10.1063/1.96449 (3 pages) | Cited 28 times

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The majority‐carrier optical emission cross section and the concentrations of the levels induced by boron implantation at 1010 ions/cm2 in GaAs have been obtained usng a new optical isothermal capacitance transient spectroscopy in the photon energy range 0.8–1.4 eV. The experimental optical data obtained at different annealing temperatures show only the presence of the EL2 and EL6 electron trap levels. Moreover, they are in complete agreement with the existence of an interaction between these two deep trap levels. Besides, this interaction has been found to be at the origin of U band in the deep level transient spectroscopy (DLTS) spectra and of the anomalous dependence on the annealing temperature of the level concentrations deduced from the optical technique and DLTS spectra. off
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78.40.Fy Semiconductors
78.30.-j Infrared and Raman spectra
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn interfaces

H.‐J. Gossmann and L. C. Feldman

Appl. Phys. Lett. 48, 1141 (1986); http://dx.doi.org/10.1063/1.96450 (3 pages) | Cited 7 times

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Interdiffusion between an ultrathin film of Sn and the Ge(100)c2×4 and Ge(111)c2×8 surfaces under atomically clean conditions is investigated using Rutherford backscattering. Indiffusion is found only if the Sn coverage exceeds a certain critical coverage θc≊1.15×1015 cm−2 even at temperatures up to 700 K. This result implies that the diffusion coefficient is at least six orders of magnitude smaller than the literature bulk value for θ<θc. We explain the observation in terms of surface segregation concepts. The temperature necessary to drive the Sn into the sample is strongly dependent on the sample surface orientation.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
66.30.J- Diffusion of impurities
68.35.B- Structure of clean surfaces (and surface reconstruction)

Neutral impurity scattering in AlGaAs

T. J. Drummond and H. P. Hjalmarson

Appl. Phys. Lett. 48, 1144 (1986); http://dx.doi.org/10.1063/1.96451 (3 pages) | Cited 5 times

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In the alloy system AlGaAs, a crossover from a direct (Γ) to an indirect (X) conduction‐band minimum occurs when the AlAs mole fraction approaches 0.45. For AlAs mole fractions greater than about 0.2, the ground‐state energy of substitutional donors becomes deep relative to the direct minimum. The donor level achieves a maximum depth of 0.16 eV near the crossover and it is not uncommon to find the donor impurity concentration exceeding the free‐electron concentration by a factor of 10 at room temperature and a factor of 20 at lower temperatures. For large impurity to electron ratios and doping levels on the order of 1018/cm3, neutral impurity scattering proves to be the dominant scattering mechanism at all temperatures.
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72.20.Dp General theory, scattering mechanisms
72.40.+w Photoconduction and photovoltaic effects
72.20.Fr Low-field transport and mobility; piezoresistance
78.40.Fy Semiconductors

Comparison of the damage and contamination produced by CF4 and CF4/H2 reactive ion etching: The role of hydrogen

X. C. Mu, S. J. Fonash, A. Rohatgi, and J. Rieger

Appl. Phys. Lett. 48, 1147 (1986); http://dx.doi.org/10.1063/1.96452 (3 pages) | Cited 14 times

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In this study, the damage and contamination effects of CF4 and CF4/H2 reactive ion etching of silicon are compared. Included for the first time is an electrical, structural, and compositional examination of etched silicon which establishes the material property modifications resulting from the incorporating of hydrogen into the reactive ion etching environment. The results of this comparison of CF4 and CF4/H2 etching show that, for the same etching parameters, the presence of hydrogen causes more structural damage in the etched Si surface. However, the hydrogen is found to passivate its own damage rendering it electrically inactive. Subsequent exposure to temperatures exceeding ∼450 °C removes the passivation.
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81.65.-b Surface treatments
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
52.40.Hf Plasma-material interactions; boundary layer effects
61.80.Jh Ion radiation effects

Third harmonic generation as a structural diagnostic of ion‐implanted amorphous and crystalline silicon

D. J. Moss, H. M. van Driel, and J. E. Sipe

Appl. Phys. Lett. 48, 1150 (1986); http://dx.doi.org/10.1063/1.96453 (3 pages) | Cited 18 times

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We demonstrate the use of third harmonic generation as a probe of the bulk symmetry properties of semiconductors. Using 20 ns, 1.06 μm laser pulses we have applied this probe to structural diagnostics of (100) annealed and unannealed Si wafers implanted with boron and arsenic ions at dosages above and below the threshold for amorphization. The presence of free carriers with densities up to 1021 cm−3 is found to increase the intensity but not alter the symmetry characteristics of the third harmonic light; the enhancement in the light level is attributed to a change in the reflectivity.
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61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
61.66.Bi Elemental solids
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Structural characterization of GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

J. M. Vandenberg, R. A. Hamm, A. T. Macrander, M. B. Panish, and H. Temkin

Appl. Phys. Lett. 48, 1153 (1986); http://dx.doi.org/10.1063/1.96454 (3 pages) | Cited 11 times

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We have carried out an x‐ray study of 20‐well quaternary InGaAsP/InP and ternary InGaAs/InP structures grown on [100]InP by gas source molecular beam epitaxy (GSMBE). The multilayers were found to grow laterally coherent and very closely lattice matched in the [100] growth direction. The presence of well‐defined higher order harmonics in the high‐resolution x‐ray diffraction confirms the excellent quality of InGaAs(P)/InP superlattices grown by the GSMBE technique.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)

Reduced temperature sensitivity AlxGa1−xAs‐GaAs quantum well lasers with (Si2)x(GaAs)1−x ‘‘barriers’’

G. S. Jackson, D. G. Deppe, K. C. Hsieh, N. Holonyak, D. C. Hall, R. D. Burnham, R. L. Thornton, and T. L. Paoli

Appl. Phys. Lett. 48, 1156 (1986); http://dx.doi.org/10.1063/1.96455 (3 pages) | Cited 2 times

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The temperature dependence of threshold current of quantum well heterostructure (QWH) laser diodes is reduced by inserting (Si2)x(GaAs)1−x barriers in the active region. Alloy clustering of the (Si2)x(GaAs)1−x barriers, grown by metalorganic chemical vapor deposition, leads to further QW carrier localization and an increase in T0 in the usual expression Jth=J0  exp(T/T0) for the threshold current. Values as high as T0=250–275 °C have been measured.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Jb Light-emitting devices

Nonlinear optical determination of the energy gap of Hg1−xCdxTe using two‐photon absorption techniques

D. G. Seiler, S. W. McClure, R. J. Justice, M. R. Loloee, and D. A. Nelson

Appl. Phys. Lett. 48, 1159 (1986); http://dx.doi.org/10.1063/1.96456 (3 pages) | Cited 3 times

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The energy band gap of Hg1−xCdxTe has been determined for the first time using two‐photon absorption techniques with CO2 lasers for samples with x≊0.32.
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71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

New semi‐insulating InP: Titanium midgap donors

C. D. Brandt, A. M. Hennel, L. M. Pawlowicz, Y.‐T. Wu, T. Bryśkiewicz, J. Lagowski, and H. C. Gatos

Appl. Phys. Lett. 48, 1162 (1986); http://dx.doi.org/10.1063/1.96457 (3 pages) | Cited 25 times

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Deep levels due to titanium were identified for the first time in InP and GaAs employing capacitance transients and optical absorption measurements. They were found to be Ti4+/Ti3+ donor levels at energies of 0.63±0.03 eV and 1.00±0.03 eV in InP and GaAs, respectively. The near midgap location of this donor level in InP is technologically very significant, since it provides a new means for obtaining semi‐insulating InP with a resistivity of about 107 Ω cm. The thermal stability of Ti‐doped InP should be superior to that of Fe‐doped InP. A formulation involving the Ti dopant and shallow acceptor impurities for obtaining semi‐insulating InP from the melt is presented.
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78.40.Fy Semiconductors
78.30.-j Infrared and Raman spectra
81.10.Fq Growth from melts; zone melting and refining
66.30.J- Diffusion of impurities

Photo‐assisted anisotropic etching of phosphorus‐doped polycrystalline silicon employing reactive species generated by a microwave discharge

N. Hayasaka, H. Okano, M. Sekine, and Y. Horiike

Appl. Phys. Lett. 48, 1165 (1986); http://dx.doi.org/10.1063/1.96458 (2 pages) | Cited 11 times

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An anisotropic etching of heavily phosphorus‐doped polycrystalline silicon is achieved by protecting the etched sidewall with polymerized film which results from the reaction of chlorine species and methyl methacrylate. Chlorine species are generated by a microwave discharge in Cl2 in the portion separated from a reaction chamber with a laser beam irradiation system. The laser beam enhances the removal of the polymerized film on the illuminated surface except the sidewall. And the Si/SiO2 etch rate ratio is infinite in this system.
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81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena
85.40.Bh Computer-aided design of microcircuits; layout and modeling
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Superconductivity in Nb‐Ge‐Al‐O films above 44 K

Tetsuya Ōgushi and Yoshihisa Ōsono

Appl. Phys. Lett. 48, 1167 (1986); http://dx.doi.org/10.1063/1.96459 (2 pages) | Cited 1 time

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Niobium‐germanium‐aluminum‐oxygen films have been found to remain superconducting up to 44.5 K. The diamagnetic susceptibility of this material was confirmed close to χ∼−0.95 experimentally and the transition from a zero resistance state to a finite resistance state was induced by current.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.-q Properties of superconductors
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
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