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5 May 1986

Volume 48, Issue 18, pp. 1175-1230


X2Σ→B2Σ absorption band of HgBr: Optically pumped 502‐nm laser

D. P. Greene, K. P. Killeen, and J. G. Eden

Appl. Phys. Lett. 48, 1175 (1986); http://dx.doi.org/10.1063/1.96460 (3 pages) | Cited 8 times

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The X2Σ+1/2→B2Σ+1/2 absorption band of HgBr has been observed in the afterglow of a pulsed Ne‐N2‐HgBr2 discharge. Peaking in the ultraviolet (UV) near 350 nm, this continuum degrades slowly to the red and at 410 nm the absorption coefficient is 30% of its maximum value. Upon exciting the X→B band with an XeF (351 nm) or frequency tripled Nd:YAG (355 nm) laser, intense lasing is observed in the blue‐green (λ∼502 nm). For λpump=351 nm, the energy conversion efficiency (UV to green) is 22% which corresponds to a photon conversion efficiency of 32%. The quantum efficiency for this four level system is 71%.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.55.-f Lasers
33.20.Lg Ultraviolet spectra
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

77 K cw operation of distributed Bragg reflector Pb1−xSnxSe/ Pb1−x−yEuySnxSe diode lasers

Y. Shani, A. Katzir, K.‐H. Bachem, P. Norton, M. Tacke, and H. M. Preier

Appl. Phys. Lett. 48, 1178 (1986); http://dx.doi.org/10.1063/1.96461 (3 pages) | Cited 6 times

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Distributed Bragg reflector Pb1−xSnxSe/ Pb1−x−yEuySnxSe double heterostructure stripe geometry diode lasers were fabricated using molecular beam epitaxy. We observed cw single mode operation between the heat‐sink temperatures 66 and 81 K at λ≊7.8 μm with an average tuning rate of 0.8 cm−1/K. Single mode continuous tuning over a relatively wide range of 6 cm−1, with an average tuning rate of 0.026 cm−1/mA, was obtained at 77 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems

Phase sensitive detection of persistent spectral holes using synchronous ultrasonic modulation

W. E. Moerner and A. L. Huston

Appl. Phys. Lett. 48, 1181 (1986); http://dx.doi.org/10.1063/1.96462 (3 pages) | Cited 5 times

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We present a new technique for the detection of spectral holes or other strain‐sensitive spectral features using phase‐sensitive ultrasonic modulation. The spectral feature is directly modulated at MHz rates in synchrony with an applied rf ultrasonic field, hence the method offers zero background and the potential for high‐speed detection with sensitivity near the quantum limit. The technique is demonstrated for a model color center system, and the characteristic line shape is analyzed in detail. The method is more sensitive than laser FM (frequency modulation) spectroscopy for low modulation frequencies, and should be generally useful for the detection of strain‐sensitive spectral features.
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07.60.Rd Visible and ultraviolet spectrometers
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
78.30.-j Infrared and Raman spectra
78.40.-q Absorption and reflection spectra: visible and ultraviolet

Interferometric measurement of the nonlinear index of refraction, n2, of CdSxSe1−x‐doped glasses

G. R. Olbright and N. Peyghambarian

Appl. Phys. Lett. 48, 1184 (1986); http://dx.doi.org/10.1063/1.96463 (3 pages) | Cited 73 times

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A novel technique, which employs a modified Twyman–Green interferometer, is used to measure the nonlinear index of a CdS0.9Se0.1‐doped glass at different wavelengths in the vicinity of the band gap at room temperature. The measured n2 values for the doped glass are compared with calculated values obtained by Kramers–Kronig transformation of the measured Δα(λ)=α(I1,λ)−α(I2,λ). A good agreement is achieved between the measured nonlinear dispersion and that obtained through the Kramers–Kronig relations.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
07.60.Ly Interferometers
42.65.-k Nonlinear optics

Third order nonlinear optical interactions in thin films of poly‐p‐phenylenebenzobisthiazole polymer investigated by picosecond and subpicosecond degenerate four wave mixing

D. Narayana Rao, Jacek Swiatkiewicz, Pratibha Chopra, Suniti K. Ghoshal, and Paras N. Prasad

Appl. Phys. Lett. 48, 1187 (1986); http://dx.doi.org/10.1063/1.96464 (3 pages) | Cited 62 times

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The third order nonlinear optical susceptibility has been measured by degenerate four wave mixing in a 33‐μm‐thick biaxial film of a conjugated aromatic heterocyclic polymer, poly‐p‐phenylenebenzobisthiazole, commonly known as PBT, which has a very high mechanical strength due to its rigid rod conformation as well as environmental stability and a high laser damage threshold. For the first time, the response of the optical nonlinearity in the π‐electron conjugated system has been experimentally verified to be in subpicoseconds. The value of χ(3) is found to be about an order of magnitude larger than that of CS2. The measurement at two different wavelengths suggests that they are nonresonant χ(3) values. The measured anisotropy of χ(3) as a function of angular orientation at two different sets of laser polarization is explained by using the tensor properties of χ(3) in an anisotropic medium.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.22.Ch Permittivity (dielectric function)

Continuous tunability in three‐terminal coupled‐cavity lasers

S. W. Corzine, L. A. Coldren, C. A. Burrus, and T. L. Koch

Appl. Phys. Lett. 48, 1190 (1986); http://dx.doi.org/10.1063/1.96465 (3 pages) | Cited 6 times

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The continuous tunability of various coupled‐cavity semiconductor lasers has been investigated. Monolithic etched groove and cleaved coupled cavity (C3) geometries are included. Using a special method of modulating the laser currents, appreciable tuning ranges have been achieved (∼8 Å) without mode hops. Also, electronic tuning of a laser with no amplitude variation is illustrated. A tuning range of 4 Å with <5% AM depth is observed. Review of the theory and a comparison of the different laser geometries are included.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

A simple method for computing the relativistic Compton scattering kernel for radiative transfer

Manoj K. Prasad, David S. Kershaw, and J. Douglas Beason

Appl. Phys. Lett. 48, 1193 (1986); http://dx.doi.org/10.1063/1.96466 (3 pages) | Cited 5 times

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The Klein–Nishina differential cross section averaged over a relativistic Maxwellian electron distribution is analytically reduced to a single integral, which can then be rapidly evaluated in a variety of ways. This is, to our knowledge, the first correct computation of the Compton scattering kernel.
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44.40.+a Thermal radiation
13.66.-a Lepton-lepton interactions

Anode‐temperature dependence of ion beam turn‐on time in magnetically insulated pulsed ion diodes

H. Yoneda, K. Horioka, K. Ohbayashi, and K. Kasuya

Appl. Phys. Lett. 48, 1196 (1986); http://dx.doi.org/10.1063/1.96467 (3 pages) | Cited 2 times

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The temperature effect of anode dielectric materials on ion beam turn‐on time is examined in a magnetically insulated pulsed ion diode. It is observed that the turn‐on time decreased with temperature increase. This effect may be explained by a simple model in which electrons bombard the anode surface to generate desorbed and evaporated gas and trigger surface flashover to produce an anode plasma.
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52.59.Mv High-voltage diodes
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
52.50.Dg Plasma sources

Epitaxial growth of LiInSe2 on {111}A oriented GaP by a hot wall technique

K. Kuriyama, Y. Igarashi, F. Nakamura, and A. Okada

Appl. Phys. Lett. 48, 1199 (1986); http://dx.doi.org/10.1063/1.97010 (3 pages) | Cited 4 times

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LiInSe2 films were grown on GaP substrates using a hot wall technique. Reflection high‐energy electron diffraction analysis showed that LiInSe2, having a β‐NaFeO2 (wurtzitelike) structure, grows epitaxially on a 〈111〉A oriented GaP at substrate temperatures ranging from 360 to 400 °C and at the wall temperature of 650 °C with the compensation of Se. The crystalline quality of the epitaxial layers on substrates was investigated by Rutherford backscattering (RBS). The depth profile of RBS‐aligned spectrum showed the relative low minimum yield of backscattered particles except for that near the interface. Auger electron spectroscopy measurements showed that the atomic concentration ratio of Se and In in films was 2.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification

Artifacts in transmission electron microscope images of artificially layered metallic superlattices

C. S. Baxter and W. M. Stobbs

Appl. Phys. Lett. 48, 1202 (1986); http://dx.doi.org/10.1063/1.96468 (3 pages) | Cited 9 times

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Both uniform and irregular artificially layered superlattice structures can exhibit a variety of misleading image artifacts in transmission electron microscopy when the layer normal is not perpendicular to the beam direction. These include apparent ‘‘layer dislocations,’’ and the origins of these and other artifacts, as observed in Cu/NiPd superlattices, are discussed.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

p‐n junction formation using laser induced donors in silicon

Y. Mada and N. Inoue

Appl. Phys. Lett. 48, 1205 (1986); http://dx.doi.org/10.1063/1.96982 (3 pages) | Cited 9 times

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The generation of high concentration defect‐related donor states during laser annealing of silicon with surface melting is found. Using these donors, p‐n junctions are fabricated on p‐type silicon substrate and good diode characteristics are obtained. Oxygen concentration increase in the laser annealed region is observed and suggests that the laser induced donors may be oxygen related. However, these donors are not oxygen thermal donors generally produced at moderate temperatures (<500 °C), because they are not annihilated by annealing at 650 °C. The present method provides for simple, low‐temperature p‐n junction formation without the addition of dopants. This method will be applicable to device fabrication on processed wafers without disturbing pre‐existing device characteristics.
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78.40.Fy Semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Kk Junction diodes

Hot‐electron induced interface traps in metal/SiO2/Si capacitors: The effect of gate‐induced strain

Terence B. Hook and T. P. Ma

Appl. Phys. Lett. 48, 1208 (1986); http://dx.doi.org/10.1063/1.96983 (3 pages) | Cited 19 times

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It is shown that the generation of interface traps by Fowler–Nordheim injection, like those generated by ionizing radiation, is a function of the mechanical strain at the silicon‐silicon dioxide interface. However, because of the current enhancement at the edge of a metal‐oxide‐semiconductor gate when the gate serves as the hot‐electron injector, this phenomenon may only be evident when the device is stressed with the gate biased positively. It is also shown that the capture rate of electrons in the silicon dioxide depends on the strain in the film.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces
84.32.Tt Capacitors
68.35.Gy Mechanical properties; surface strains

High pressure dry oxidation kinetics of silicon—evidence of a highly stressed SiO2 structure

C. Camelin, G. Demazeau, A. Straboni, and J. L. Buevoz

Appl. Phys. Lett. 48, 1211 (1986); http://dx.doi.org/10.1063/1.96984 (3 pages) | Cited 4 times

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The kinetics of monocrystalline silicon oxidation using dry oxygen have been investigated over a wide range of pressure (14<P<1000 bars) within a low‐temperature domain (600<T <780 °C). In this unexplored domain, the linear and parabolic rate constants are dependent on the pressure as B/A∼P0.7 and B∼P. The activation energy of B/A (1.70 eV) is lower than the experimental values observed in conventional thermal oxidation. Very high residual stress values have been found for these oxides together with high values of refractive index suggesting that the oxidation proceeded under compressive in‐grown stresses.
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81.65.-b Surface treatments
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.55.-a Thin film structure and morphology
68.60.Bs Mechanical and acoustical properties

Charge‐density fluctuations and spatial modulation of heavy‐ and light‐hole‐like character in GaAs‐AlGaAs(001) superlattices

M. A. Gell and M. Jaros

Appl. Phys. Lett. 48, 1214 (1986); http://dx.doi.org/10.1063/1.96985 (3 pages) | Cited 3 times

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We have used local pseudopotentials with spin‐orbit coupling to illustrate some of the effects occurring in GaAs‐AlGaAs (001) superlattices as a result of fluctuations in the widths of the layers. Full account is taken of the microscopic superlattice potential, and states associated with the principal as well as secondary band minima are presented. It is shown that fluctuations of only one monolayer can lead to a complete transfer of probability density into the lowest Γ‐related symmetry‐induced state. This also applies to states associated with the secondary band minima confined in the hot‐electron range of energies. We also show that small fluctuations in layer width can be used to achieve a tunable spatial modulation of heavy‐ and light‐hole‐like character within the same superlattice state. We discuss some of the implications of our results for band structure engineering.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Vapor phase epitaxial growth and characterization of InP on GaAs

S. J. J. Teng, J. M. Ballingall, and F. J. Rosenbaum

Appl. Phys. Lett. 48, 1217 (1986); http://dx.doi.org/10.1063/1.96986 (3 pages) | Cited 14 times

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Crystal growth of InP on GaAs by vapor phase epitaxy is reported. It is demonstrated that good quality InP epitaxial layers with featureless surface morphology can be grown on GaAs substrate. Carrier concentration profile and Hall mobility measurements from as‐grown n‐type InP layers show that its doping behavior and mobility are similar to those grown on InP substrates. The results are encouraging for the development of devices utilizing InP/GaAs heterojunctions and the use of bulk GaAs as an alternative substrate to bulk InP for the epitaxial growth of InP and related compounds.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Transistor action in novel GaAs/W/GaAs structures

G. E. Derkits, J. P. Harbison, J. Levkoff, and D. M. Hwang

Appl. Phys. Lett. 48, 1220 (1986); http://dx.doi.org/10.1063/1.96987 (3 pages) | Cited 7 times

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Structures containing thin polycrystalline layers of W embedded in essentially single crystal GaAs have been grown by molecular beam epitaxy. The W layers exhibit resistivities of 90–300 μΩ cm and Schottky barriers to both substrate and overgrown GaAs. The structures can act as metal gate transistors with β of 0.2–1.4 and α of 0.4–0.6. These are the first reported metal gate transistors in the III‐V materials and the first using a nonepitaxial base and laterally seeded overgrowth. The use of a nonepitaxial base represents a degree of freedom which may be usefully exploited in a wide class of materials systems and may be important for the development of future metal gate transistors, especially in III‐V materials.
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73.40.Vz Semiconductor-metal-semiconductor structures
73.61.At Metal and metallic alloys
85.30.Pq Bipolar transistors
73.30.+y Surface double layers, Schottky barriers, and work functions

Dislocation reduction in epitaxial GaAs on Si(100)

R. Fischer, D. Neuman, H. Zabel, H. Morkoç, C. Choi, and N. Otsuka

Appl. Phys. Lett. 48, 1223 (1986); http://dx.doi.org/10.1063/1.96988 (3 pages) | Cited 102 times

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We have studied the nucleation and propagation of threading dislocations in GaAs on Si epitaxial layers, and have found several techniques which are effective in reducing their density. The use of substrates properly tilted off (100) reduces the dislocation density as the presence of steps helps create perfect edge dislocations with their Burgers vector parallel to the interface and thus do not propagate into the bulk epitaxial layer. Cross sections by transmission electron microscopy show that the incorporation of an InGaAs/GaAs strained‐layer superlattice reduces the density of threading dislocations above it by a factor of 10, clearly demonstrating the effectiveness of this technique. These methods lead to a dislocation density of 103 cm−2 near the surface of 2 μm layers which is five orders of magnitude lower than what has been obtained previously. We have also found that the density of oval defects is much lower for GaAs on Si than for GaAs on GaAs.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Pulsed CO2 laser etching of polyimide

J. H. Brannon and J. R. Lankard

Appl. Phys. Lett. 48, 1226 (1986); http://dx.doi.org/10.1063/1.96989 (3 pages) | Cited 39 times

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Etching of thin polyimide films in air was investigated using a line tunable, pulsed CO2 laser. The threshold fluence for etching at a wavelength of 944 cm−1 (10.6 μm) exceeds that at 1087 cm−1 (9.2 μm) by a factor of 4. This is consistent with the infrared absorption spectrum which shows polyimide to be significantly more absorbing at 1087 cm−1. As a result, etching at 1087 cm−1 produces a cleaner, more precisely defined region. Analysis of the vapors generated during laser etching shows the simple gases CO2, H2O, and CO to be present.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena

X‐ray photoelectron spectroscopy on surface oxidation of silicon by some cleaning procedures

C. Y. Wong and S. P. Klepner

Appl. Phys. Lett. 48, 1229 (1986); http://dx.doi.org/10.1063/1.96990 (2 pages) | Cited 5 times

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X‐ray photoelectron spectroscopy was used to analyze silicon surfaces after some standard cleaning procedures. Buffered hydrofluoric acid (BHF), RCA clean, and back door etch (BDE) result in less than one monolayer of suboxide coverage. RCA clean without BHF, heat treatment in nitrogen ambience, and prolonged explosure to air at room temperature all result in thicker self‐passivating suboxides. Wafers with arsenic ion implantation yield thicker oxides even immediately after BHF or BDE clean. Arsenic ion implantation also causes an additional chemical shift of 0.3 eV on the Si 2p peak. The possible causes for these observations are discussed.
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81.65.-b Surface treatments
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
81.40.Gh Other heat and thermomechanical treatments
61.72.uf Ge and Si
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