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12 May 1986

Volume 48, Issue 19, pp. 1237-1316

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Measurements of x‐ray dose required for multiatmospheric pressure CO2 laser discharge

K. Midorikawa, M. Okada, H. Tashiro, and S. Namba

Appl. Phys. Lett. 48, 1237 (1986); http://dx.doi.org/10.1063/1.96991 (3 pages) | Cited 4 times

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We have investigated the preionization characteristics of x ray for a transversely excited, multiatmospheric pressure CO2 laser amplifier with an active volume as large as 225 cm3. The x‐ray dose required for uniform avalanche discharge is measured as a function of pressure up to 10 atm. The dependence of the input energy density of the main discharge on the x‐ray dose is also investigated.
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42.55.-f Lasers
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Coherent coupling of diode lasers by phase conjugation

Mark Cronin‐Golomb, Amnon Yariv, and Israel Ury

Appl. Phys. Lett. 48, 1240 (1986); http://dx.doi.org/10.1063/1.97009 (3 pages) | Cited 21 times

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We report experimental demonstrations of the use of a photorefractive barium titanate ring passive phase conjugate mirror in the coherent coupling of two GaAlAs diode lasers. By cooling the crystal towards its tetragonal to orthorhombic phase transition, we were also able to achieve infrared photorefractive phase conjugation with gain.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Highly efficient waveguide phase modulator for integrated optoelectronics

A. Alping, X. S. Wu, T. R. Hausken, and L. A. Coldren

Appl. Phys. Lett. 48, 1243 (1986); http://dx.doi.org/10.1063/1.96992 (3 pages) | Cited 20 times

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The characteristics of novel reverse‐biased waveguide phase modulators are reported. These devices, which use the translation of a depletion edge, have provided the highest efficiency figure of merit (56 °/Vmm) ever reported for a reverse‐biased device. Furthermore, the speed of the device is only limited by the RC time constant. The investigated devices were GaAs/AlGaAs ridge waveguide modulators, a geometry which is well suited for integrated optoelectronics.
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42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators
42.82.-m Integrated optics
85.60.-q Optoelectronic devices

Field‐dependent linewidths and photoluminescence energies in GaAs‐AlGaAs multiquantum well modulators

F‐Y. Juang, Jasprit Singh, Pallab K. Bhattacharya, K. Bajema, and R. Merlin

Appl. Phys. Lett. 48, 1246 (1986); http://dx.doi.org/10.1063/1.96993 (3 pages) | Cited 16 times

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Photoluminescence linewidths and transition energies have been measured in GaAs‐AlGaAs multiple quantum wells with large (≥160 Å) barrier widths as a function of applied transverse electric field. The experimental data agree well with values calculated by using a recently developed variational technique. It is apparent that heterointerface roughness is the dominant line broadening mechanism. The emission intensity decreases rapidly with field, principally due to carrier tunneling at high fields. At 80 kV/cm a shift of 20 meV in the emission energy is observed.
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78.40.Fy Semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
42.79.Hp Optical processors, correlators, and modulators
81.40.Tv Optical and dielectric properties related to treatment conditions

Wave propagation in alternating solid and viscous fluid layers: Size effects in attenuation and dispersion of fast and slow waves

Michael Schoenberg and Pabitra N. Sen

Appl. Phys. Lett. 48, 1249 (1986); http://dx.doi.org/10.1063/1.96994 (3 pages) | Cited 7 times

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In a system of alternating parallel elastic solid layers (plates) and viscous fluid layers (channels), two types of waves propagate parallel to the layers in the low‐frequency limit. They are related to fast and slow waves in Biot’s theory of wave propagation in porous media. The slownesses s0 fast and s0 slow obtained previously for the case of inviscid fluid layers between elastic plates are modified to reflect dispersion and attenuation due to fluid viscosity. Two important dimensionless dynamic parameters are L=ϕH/δ, where H is the period width, ϕ is the relative width of the fluid channel, i.e., the ‘‘porosity,’’ and δ=(2ν/ω)1/2 is the viscous skin depth, and Ω=ωϕH/α f which is channel width times the fluid wave number. Here ν is the kinematic viscosity of the fluid, α f is the fluid sound velocity, and ω is the radial frequency. In the frequency range for which L is very large L≫1 and Ω is very small Ω≪1, the attenuation and dispersion of both slow and fast waves exhibit similar dependences on L.
In particular, both wave velocities are decreased by an amount proportional to L−1(∼ω−1/2) and both have a quality factor Q proportional to L(∼ω1/2). To leading order in L−1 the wave slownesses have the form s2j=s20j[1+(1+i)Mj/L], j=fast or slow, where Mj are combinations of material and geometric parameters. The Q≡Re(s2)/Im(s2) factors are, for the fast wave, Qfast≊L/Mfast≊L/{[ϕρ f/(1−ϕ)ρ−ϵ]} and, for the slow wave, Qslow≊L/Mslow ≊L/(1+ϵ). ρ f and ρ are fluid and solid densities, respectively. ϵ is a usually small parameter given by 2(1−2γ)(ρ f/ρ)/ [α2pl/α2 f+(1−ϕ)ρ f/ϕρ−1], where γ is the square of the ratio of shear velocity to longitudinal velocity in the bulk solid and αpl is the velocity of long wavelength extensional plate waves.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
62.30.+d Mechanical and elastic waves; vibrations
43.20.Bi Mathematical theory of wave propagation
43.20.Hq Velocity and attenuation of acoustic waves

Direct observation of resolidification from the surface upon pulsed‐laser melting of amorphous silicon

J. J. P. Bruines, R. P. M. van Hal, H. M. J. Boots, W. Sinke, and F. W. Saris

Appl. Phys. Lett. 48, 1252 (1986); http://dx.doi.org/10.1063/1.96995 (3 pages) | Cited 21 times

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Amorphized Si has been irradiated using a 7.5‐ns frequency‐doubled neodymium:yttrium aluminum garnet laser. For low energy density pulses, time‐resolved reflectivity measurements and Rutherford backscattering spectrometry of Cu implantation profiles show that the melted layer solidifies from the surface as well as from the liquid‐solid interface. From interferences in the reflectivity, growth from the surface is found to occur at a velocity of 1.5 m/s. At higher energy densities sufficient to obtain epitaxial regrowth of the amorphous layer, solidification from the surface does not occur.
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68.35.Rh Phase transitions and critical phenomena
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.30.Fb Solidification

New phase change material for optical recording with short erase time

Roger Barton, Charles R. Davis, Kurt Rubin, and Grace Lim

Appl. Phys. Lett. 48, 1255 (1986); http://dx.doi.org/10.1063/1.97031 (3 pages) | Cited 34 times

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We present data on a new erasable phase change medium, demonstrating for the first time that very short erase times can be obtained without sacrificing room‐temperature stability of the amorphous state. Thin films of the composition Sb2Se underwent 10% relative reflectivity changes when switched with a laser between amorphous and crystalline states. Twenty milliwatt, 50 ns laser pulses were used for writing amorphous spots; 6.9 mW, 200 ns pulses were used for erasing. A playback carrier to noise ratio of 43 dB was observed on a plastic disk. Amorphous spots could be heated in a microscope to 175 °C before they crystallized. Transmission electron microscopy and x‐ray diffraction indicate that the erased state is single phase and polycrystalline. The crystal structure, however, does not correspond to known compounds in the antimony‐selenium system.
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42.79.Vb Optical storage systems, optical disks
75.20.Ck Nonmetals
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.40.Tv Optical and dielectric properties related to treatment conditions

Finite element analysis of the diamond anvil cell: Achieving 4.6 Mbar

William C. Moss, John O. Hallquist, Robin Reichlin, Kenneth A. Goettel, and Sue Martin

Appl. Phys. Lett. 48, 1258 (1986); http://dx.doi.org/10.1063/1.96996 (3 pages) | Cited 44 times

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We have performed a comprehensive finite element analysis of the diamond anvil cell. Our analysis shows how beveled diamonds and material properties of the gasket affect diamond anvil cell performance. Using the results of the analysis, we have achieved 4.6 Mbar experimentally, which is the highest static pressure reported to date. Possible methods to increase the pressure further are discussed.
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07.35.+k High-pressure apparatus; shock tubes; diamond anvil cells
62.50.-p High-pressure effects in solids and liquids
62.20.F- Deformation and plasticity

Photoreflectance of GaAs/GaAlAs multiple quantum wells: Topographical variations in barrier height and well width

P. Parayanthal, H. Shen, Fred H. Pollak, O. J. Glembocki, B. V. Shanabrook, and W. T. Beard

Appl. Phys. Lett. 48, 1261 (1986); http://dx.doi.org/10.1063/1.96997 (3 pages) | Cited 34 times

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Using photoreflectance at room temperature we have evaluated the topographical variations in quantum level transitions of a GaAs/GaAlAs multiple quantum well (220 Å/150 Å) due to changes in barrier height and quantum well width. The spatial resolution of the measurement was about 100 μm. A key feature of our analysis is the ability to fit the electromodulation spectra by a third‐derivative functional form line shape factor. We can detect barrier height changes of several millielectron volts and variations in well width as small as 2 Å.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
75.20.Ck Nonmetals
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Growth of strained‐layer semiconductor‐metal‐semiconductor heterostructures

R. T. Tung, J. M. Gibson, and A. F. J. Levi

Appl. Phys. Lett. 48, 1264 (1986); http://dx.doi.org/10.1063/1.96998 (3 pages) | Cited 26 times

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Single crystal epitaxial strained‐layer semiconductor‐metal‐semiconductor heterostructures have been grown for the first time. Silicon layers were grown by molecular beam epitaxy over thin (<100 Å) NiSi2 layers on Si(111). The presence of ∼20 Å Si template layers formed at low temperature (<500 °C) on the silicide was shown to have a dramatic effect on subsequent Si growth. The overgrown Si layers were rotated 180° with respect to the NiSi2 and had a channeling minimum yield of ∼3%. Epitaxial strained‐layer semiconductor‐metal‐semiconductor heterostructures represent a new class of material system with potential for high‐speed device applications.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

First observation of the two‐dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition

M. Razeghi, P. Maurel, F. Omnés, S. Ben Armor, L. Dmowski, and J. C. Portal

Appl. Phys. Lett. 48, 1267 (1986); http://dx.doi.org/10.1063/1.96999 (3 pages) | Cited 21 times

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We report the first observation of a two‐dimensional electron gas from Shubnikov–de Haas and quantum hall effect experiments in GaInP/GaAs heterostructures grown by low pressure metalorganic chemical vapor deposition. Angular‐dependent Shubnikov–de Haas measurements confirm two dimensionality of the system. Low‐temperature persistent photoconductivity was observed. Critical density at which the second electric subband starts to be populated was determined to be 7.3×1011 cm−2.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Capture and emission kinetics of individual Si:SiO2 interface states

M. J. Kirton and M. J. Uren

Appl. Phys. Lett. 48, 1270 (1986); http://dx.doi.org/10.1063/1.97000 (3 pages) | Cited 69 times

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By studying the random telegraph signals in the drain current of small area metal‐oxide‐semiconductor field‐effect transistors as a function of temperature, we show that carrier capture into individual interface states takes place via a multiphonon process. We demonstrate that the interface trap energy levels are temperature dependent as a result of entropy changes on trap ionization.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
72.70.+m Noise processes and phenomena

(100) and (111) oriented CdTe grown on (100) oriented GaAs by molecular beam epitaxy

J. M. Ballingall, M. L. Wroge, and D. J. Leopold

Appl. Phys. Lett. 48, 1273 (1986); http://dx.doi.org/10.1063/1.97001 (3 pages) | Cited 33 times

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Techniques are described for growing (100) and (111) oriented CdTe on (100) oriented GaAs by molecular beam epitaxy. Structural characterization reveals that there are substantial differences in crystalline quality between the two orientations, (111) being superior. Single‐crystalline (100) oriented films can be grown on oxidized GaAs surfaces, but the crystalline quality is improved if the oxide is desorbed prior to growth.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

High quality CdTe epilayers on GaAs grown by hot‐wall epitaxy

D. Schikora, H. Sitter, J. Humenberger, and K. Lischka

Appl. Phys. Lett. 48, 1276 (1986); http://dx.doi.org/10.1063/1.97002 (3 pages) | Cited 27 times

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Hot‐wall epitaxy is used for the first time for the growth of high quality CdTe epilayers on semi‐insulating GaAs. The quality of the films is investigated by photoluminescence at 10 K, 78 K, and room temperature. The photoluminescence spectra at 78 K show a strong bound exciton recombination at about 1.58 eV with a linewidth of 11 meV. The linewidth of the bound exciton emission at 10 K is 1 meV. The electrical properties of the as‐grown layers are measured by Hall effect yielding a hole concentration of p=3×1012 cm−3 and a mobility of 100 cm2/V s at 270 K.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
78.40.Fy Semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Dependence of silicon‐on‐insulator transistor parameters on oxygen implantation temperature

J. R. Davis, M. R. Taylor, G. D. T. Spiller, P. J. Skevington, and P. L. F. Hemment

Appl. Phys. Lett. 48, 1279 (1986); http://dx.doi.org/10.1063/1.97003 (3 pages) | Cited 6 times

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Silicon‐on‐insulator films have been formed by high‐dose oxygen implantation. Thermal donors, resulting from the residual oxygen content of the single crystal silicon region of the films, have been found to influence the electrical performance of transistors fabricated in them. The amount of oxygen in the active region of the silicon layer is strongly dependent on the oxygen implantation temperature. As the temperature is decreased below 500 °C an increasing thickness of oxygen‐rich polycrystalline silicon is formed between the single crystal region and the buried oxide, causing the oxygen concentration in the single crystal region (and hence the thermal donor activity) to fall. As well as providing thermal donors, the residual oxygen also causes a lattice strain which increases the electron mobility.
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85.30.Tv Field effect devices
81.40.Rs Electrical and magnetic properties related to treatment conditions
61.72.uf Ge and Si
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Photoresponse of the EL2 absorption in undoped semi‐insulating GaAs

B. Dischler, F. Fuchs, and U. Kaufmann

Appl. Phys. Lett. 48, 1282 (1986); http://dx.doi.org/10.1063/1.97004 (3 pages) | Cited 25 times

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The response of the EL2 absorption band to monochromatic secondary illumination has been studied in undoped semi‐insulating GaAs. Photoinduced changes of the absorption band are spectrally nonuniform. In addition, the changes are nonmonotonic in time similar to the EL2 photocapacitance transients: A fast enhancement in absorption is followed by a slow quenching. These data can be explained in terms of the EL2 properties known from photocapacitance studies. A comparison with recent electron paramagnetic resonance (EPR) results for the AsGa antisite provides direct evidence that the EL2 absorption band and the As+Ga EPR are induced by the same defect.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
76.30.Mi Color centers and other defects

Ion beam etching and surface characterization of indium phosphide

N. Bouadma, P. Devoldere, B. Jusserand, and P. Ossart

Appl. Phys. Lett. 48, 1285 (1986); http://dx.doi.org/10.1063/1.97005 (3 pages) | Cited 12 times

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A new method of Ar ion beam etching of InP using a LN2 cooled sample holder is described. Smooth and low‐damage etched surfaces have been obtained using this technique. Auger electron spectroscopy measurements and laser Raman spectroscopy analysis indicated that the morphology degradation was significantly reduced.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Jh Ion radiation effects
68.35.B- Structure of clean surfaces (and surface reconstruction)

Very high quality single and multiple GaAs quantum wells grown by chemical beam epitaxy

W. T. Tsang and R. C. Miller

Appl. Phys. Lett. 48, 1288 (1986); http://dx.doi.org/10.1063/1.97006 (3 pages) | Cited 11 times

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High quality GaAs/AlxGa1−xAs single and multiquantum well heterostructures were grown for the first time by chemical beam epitaxy. Studies using low‐temperature photoluminescence and excitation spectroscopy techniques show that on the average these samples are similar in quality to similar structures from this laboratory grown by molecular beam epitaxy (MBE) and in certain specific characteristics superior to the MBE ones. Furthermore, in some important respects, they are also superior to those grown by organometallic chemical vapor deposition (OMCVD). The very small red shifts observed between emission and n=1 exciton transition E1h with continuous growth show that the emission is dominated by E1h excitons. An interface roughness of δL≲±a/2, where a is the lattice constant, and very square wells (undistorted) even with continuous growth, in contrast to OMCVD are inferred from the excitation spectra. Unusually sharp exciton transition peaks up to E3h including forbidden transitions were obtained in single quantum wells. Such high quality line shape has not been obtained in MBE or OMCVD grown wafers so far. The excitation spectra also show no evidence of band filling due to holes or electrons from the AlxGa1−xAs layers which is a common problem with the OMCVD technique. From this study, it is also shown that the GaAs and AlxGa1−xAs materials are of very high purity.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Effect of hydrogen on undoped and lightly Si‐doped molecular beam epitaxial GaAs layers

Yi‐Ching Pao, D. Liu, W. S. Lee, and J. S. Harris

Appl. Phys. Lett. 48, 1291 (1986); http://dx.doi.org/10.1063/1.96956 (3 pages) | Cited 14 times

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This letter describes a series of experiments in which pure hydrogen gas (at up to 1.2×10−6 Torr partial pressure) was introduced during molecular beam epitaxial (MBE) growth of low‐doped and undoped GaAs at a substrate temperature of 580 °C. A major improvement in the electrical properties of the epitaxial layer has been observed. Electron mobilities at 77 K and deep level transient spectroscopy (DLTS) spectra are presented. A sharp increase in electron mobility and a dramatic reduction of M1 and M4 deep electron traps as shown by DLTS have been achieved with small amounts of H2 gas at 1.2×10−6 Torr partial pressure.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.40.Fy Semiconductors

New avalanche multiplication phenomenon in quantum well superlattices: Evidence of impact ionization across the band‐edge discontinuity

F. Capasso, J. Allam, A. Y. Cho, K. Mohammed, R. J. Malik, A. L. Hutchinson, and D. Sivco

Appl. Phys. Lett. 48, 1294 (1986); http://dx.doi.org/10.1063/1.96957 (3 pages) | Cited 30 times

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In suitably designed superlattice structures hot carriers in the barrier layers can collide with carriers confined or dynamically stored in the wells and impact ionize them out, across the band‐edge discontinuity. Photomultiplication and spectral response measurements as a function of temperature and chopping frequency in Al0.48 In0.52 As/Ga0.47 In0.53As and AlSb/GaSb superlattices provide strong evidence of this effect. The observed phenomenon is characterized by a large ratio of the multiplication factors for holes and electrons implying that β≫α and can be the basis for a new class of very low noise avalanche photodiodes and solid‐state photomultipliers.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Dw Photodiodes; phototransistors; photoresistors

Neutron induced conductivity in trans‐polyacetylene

M. A. Butler, D. S. Ginley, and J. W. Bryson

Appl. Phys. Lett. 48, 1297 (1986); http://dx.doi.org/10.1063/1.96958 (3 pages) | Cited 2 times

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Neutron induced conductivity is reported for the first time in an organic conductor. The induced conductivity is linear in total neutron flux over several decades and Seebeck measurements indicate that the conductivity is p type. Optical measurements show that acetonitrile plays an important role in the conductivity changes. The implication of these results for conduction mechanisms in polyacetylene is discussed. These results demonstrate a new method for producing uniform low doping in organic conductors and a potential mechanism for a new, fast neutron dosimetry.
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72.80.Le Polymers; organic compounds (including organic semiconductors)
61.72.up Other materials
81.40.Rs Electrical and magnetic properties related to treatment conditions
28.41.Te Protection systems, safety, radiation monitoring, accidents, and dismantling

New capping technique for zone‐melting recrystallization of silicon‐on‐insulator films

C. K. Chen, M. W. Geis, M. C. Finn, and B‐Y. Tsaur

Appl. Phys. Lett. 48, 1300 (1986); http://dx.doi.org/10.1063/1.96959 (3 pages) | Cited 13 times

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A new capping technique employing high‐temperature NH3 annealing has been developed to ensure uniform wetting by the molten Si zone during zone‐melting recrystallization of Si‐on‐insulator films. By using this technique, we have reproducibly prepared 0.5‐μm‐thick films with 〈100〉 crystalline texture that are greatly improved in smoothness, void density, and thickness uniformity. In addition, recrystallized 1‐μm‐thick films have been obtained with large areas that are free of subboundaries, containing only threading dislocations at densities of less than 2×106 cm−2.
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81.10.Fq Growth from melts; zone melting and refining
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Optical mapping of residual stress in Czochralski grown GaAs

P. Dobrilla and J. S. Blakemore

Appl. Phys. Lett. 48, 1303 (1986); http://dx.doi.org/10.1063/1.96960 (3 pages) | Cited 14 times

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Despite several detailed theoretical analyses of the stress distribution expected for Czochralski grown GaAs crystals, experimental verification of these calculations has hitherto relied on dislocation density measurements. The present work shows that weak photoelastic patterns are resolvable in the near‐infrared transmittance (typically near 1.4 μm) of semi‐insulating GaAs wafers. Mapping of these patterns reveals the contours of constant shear stress, with results generally supporting the calculated models for the stress distribution.
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46.80.+j Measurement methods and techniques in continuum mechanics of solids
62.20.F- Deformation and plasticity
62.20.Hg Creep
78.20.Fm Birefringence

Effect of surface losses on soliton propagation in Josephson junctions

A. Davidson, N. F. Pedersen, and S. Pagano

Appl. Phys. Lett. 48, 1306 (1986); http://dx.doi.org/10.1063/1.96961 (3 pages) | Cited 20 times

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We have explored numerically the effects on soliton propagation of a third order damping term in the modified sine‐Gordon equation. In Josephson tunnel junctions such a term corresponds physically to quasiparticle losses within the metal electrodes of the junction. We find that this loss term plays the dominant role in determining the shape and stability of the soliton at high velocity.
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74.50.+r Tunneling phenomena; Josephson effects
74.78.-w Superconducting films and low-dimensional structures
41.20.Jb Electromagnetic wave propagation; radiowave propagation

Nd‐Fe‐B‐Co‐Al based permanent magnets with improved magnetic properties and temperature characteristics

T. Mizoguchi, I. Sakai, and K. Inomata

Appl. Phys. Lett. 48, 1309 (1986); http://dx.doi.org/10.1063/1.96962 (2 pages) | Cited 6 times

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Magnetic properties have been studied with respect to the boron concentration on Nd‐Fe‐B based magnets. The combined addition of cobalt and aluminum in a Nd‐Fe‐B magnet is remarkably effective for increasing magnetic hardness in the region of low boron concentration. The following magnetic properties were attained for Nd15Fe62.5B5.5Co16Al1 :Br=13.2 kG, iHc=11.0 kOe, (BH)max=41.0 MGOe, and Tc=500 °C. The reversible temperature coefficient of the remanence of the magnet is −0.071%/deg, approximately one‐half of the Nd15Fe77B8 magnet.
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75.50.Vv High coercivity materials
75.50.Bb Fe and its alloys
07.55.Db Generation of magnetic fields; magnets
85.70.-w Magnetic devices
81.40.Rs Electrical and magnetic properties related to treatment conditions
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