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6 Jan 1986

Volume 48, Issue 1, pp. 1-80

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21% (one sun, air mass zero) 4 cm2 GaAs space solar cells

J. G. Werthen, G. F. Virshup, C. W. Ford, C. R. Lewis, and H. C. Hamaker

Appl. Phys. Lett. 48, 74 (1986); http://dx.doi.org/10.1063/1.96766 (2 pages) | Cited 12 times

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GaAs space solar cells with areas of 4 cm2 have been fabricated by metalorganic chemical vapor deposition. The AlGaAs‐GaAs heteroface structures have been grown in both the p‐n and n‐p configurations. Under one sun, air mass zero conditions and at 25 °C, the p‐n cell is characterized by a short‐circuit current density of 32.3 mA/cm2, an open‐circuit voltage of 1.05 V, and a fill factor of 0.84, resulting in a conversion efficiency of 21.1%. The corresponding values for n‐p cells are 33.8 mA/cm2, 1.01 V, and 0.83, resulting in a conversion efficiency of 21.0%.
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84.60.Jt Photoelectric conversion
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Kk Junction diodes

Dependence of photoetching rates of polymers at 193 nm on optical absorption depth

H. S. Cole, Y. S. Liu, and H. R. Philipp

Appl. Phys. Lett. 48, 76 (1986); http://dx.doi.org/10.1063/1.96767 (2 pages) | Cited 25 times

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Mixtures of poly(methyl methacrylate) and poly(α‐methyl styrene) were prepared and their optical absorption coefficients at 193 nm were measured. A study of photoetching rate of these polymeric materials using an ArF excimer laser at 193 nm shows two regions of distinctly different etching characteristics. At relatively high fluences (>300 mJ/cm2) the photoetch rate decreased with increasing absorption in the polymer films, while at lower fluences, an optimum range of absorption coefficients was found to give the maximum photoetching rate.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
75.20.Ck Nonmetals
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Wafer bonding for silicon‐on‐insulator technologies

J. B. Lasky

Appl. Phys. Lett. 48, 78 (1986); http://dx.doi.org/10.1063/1.96768 (3 pages) | Cited 188 times

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A silicon wafer bonding process is described in which only thermally grown oxide is present between wafer pairs. Bonding occurs after insertion into an oxidizing ambient. It is proposed the wafers are drawn into intimate contact as a result of the gaseous oxygen between them being consumed by oxidation, thus producing a partial vacuum. The proposed bonding mechanism is polymerization of silanol bonds between wafer pairs. Silicon on insulator (SOI) is produced by etching away all but a few microns of one of the bonded pair. Capacitor measurements show a 27 μs minority‐carrier lifetime and no degradation of the SOI‐insulator interface. In addition, there is negligible charge at the bonding interface making the technique attractive for three‐dimensional as well as planar SOI applications.
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68.35.Fx Diffusion; interface formation
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.40.Bh Computer-aided design of microcircuits; layout and modeling
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