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19 May 1986

Volume 48, Issue 20, pp. 1323-1406

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Inter‐intramode correlation spectroscopy: A new experimental technique to study mode interaction in semiconductor lasers

W. Elsässer

Appl. Phys. Lett. 48, 1323 (1986); http://dx.doi.org/10.1063/1.96948 (3 pages) | Cited 2 times

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A new experimental method to study modal interaction in semiconductor lasers is presented. The inter‐intramode correlation spectroscopy investigates correlations between intensity and phase fluctuations having their origin in different longitudinal modes. First results for GaAs/(GaAl)As multimode lasers reveal correlated frequency fluctuations of the total longitudinal mode comb. Refractive index fluctuations and intermode coupling are discussed as the origin for these intramodal fluctuations.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Cerenkov maser operation at 1–2 mm wavelengths

E. P. Garate, S. Moustaizis, J. M. Buzzi, C. Rouille, H. Lamain, J. Walsh, and B. Johnson

Appl. Phys. Lett. 48, 1326 (1986); http://dx.doi.org/10.1063/1.96949 (3 pages) | Cited 13 times

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The interaction of a dense (n∼1012 cm−3), mildly relativistic (1.8<γ<3) electron beam and a cylindrical, dielectric lined waveguide has produced tunable microwave radiation in the 150–310 GHz frequency range with an estimated power output of 500 kW at 150 GHz and 10 kW at 310 GHz. The measured output frequency agrees well with the frequency for which the phase velocity of the TM01 mode of the dielectric lined guide is synchronous with the electron beam velocity.
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84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)
41.60.-m Radiation by moving charges
84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
41.75.Ht Relativistic electron and positron beams

Cancellation of fiber loss by semiconductor laser pumped Brillouin amplification at 1.5 μm

N. A. Olsson and J. P. van der Ziel

Appl. Phys. Lett. 48, 1329 (1986); http://dx.doi.org/10.1063/1.96950 (2 pages) | Cited 20 times

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The propagation loss is canceled, and 5 dB of net gain is obtained by Brillouin amplification in a 37.5‐km‐long single‐mode optical fiber. A narrow linewidth external cavity semiconductor laser is used as the pump source and a gain of 4.3 dB/mW pump power is measured. The Brillouin linewidth is measured to be 150 MHz in contrast to previous measurements of ∼20 MHz. The Brillouin Stokes shift was 11.3 GHz at 1.5 μm wavelength.
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42.81.Dp Propagation, scattering, and losses; solitons
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.81.Cn Fiber testing and measurement of fiber parameters

Traveling‐wave amplifier made from a laser diode array

John R. Andrews

Appl. Phys. Lett. 48, 1331 (1986); http://dx.doi.org/10.1063/1.96951 (3 pages) | Cited 7 times

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A traveling‐wave amplifier has been fabricated from a ten‐stripe, AlGaAs phase‐locked injection laser array by antireflection coating both facets. A small‐signal gain of 18.6 dB, when corrected for optical coupling efficiency, has been observed, resulting in over 100 mW of coherent optical power output. When the signal source is a single transverse and single longitudinal mode diode laser, the far‐field radiation pattern is dominated by a single lobe with a divergence of 0.86° in the lateral plane.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Model for electron cooling by radiation losses in plasmas: Application to development of soft x‐ray lasers

C. H. Skinner and C. Keane

Appl. Phys. Lett. 48, 1334 (1986); http://dx.doi.org/10.1063/1.96952 (3 pages) | Cited 9 times

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We present a simple model which may be used to evaluate the suitability of different ions for rapid plasma cooling by line radiation in recombination pumped x‐ray laser schemes.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.25.Dg Plasma kinetic equations
52.20.Fs Electron collisions
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Phase‐locked shallow mesa graded barrier quantum well laser arrays

L. J. Mawst, M. E. Givens, M. A. Emanuel, C. A. Zmudzinski, and J. J. Coleman

Appl. Phys. Lett. 48, 1337 (1986); http://dx.doi.org/10.1063/1.96953 (3 pages) | Cited 3 times

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Graded barrier quantum well heterostructures have been grown by metalorganic chemical vapor deposition and processed into real index‐guided shallow mesa laser arrays. Single‐stripe devices have threshold currents as low as 14 mA (533 μm length) and ten‐element arrays have threshold currents as low as 9 mA per stripe with 52% differential quantum efficiency. These arrays operate phase locked with sharp double‐lobed far‐field patterns up to 1.75 times threshold current.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.60.Jb Light-emitting devices
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Corrections to the rate equation approximation for dynamic considerations in a semiconductor laser

Kerry Vahala

Appl. Phys. Lett. 48, 1340 (1986); http://dx.doi.org/10.1063/1.96954 (2 pages) | Cited 1 time

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Corrections to the rate equation approximation are derived and applied to a semiconductor laser. Whereas these corrections do not affect the operating point of the device, they do alter the dynamic operation. To first order the correction produces a renormalization of familiar dynamic parameters. This renormalization, in turn, leads to a 20% correction to the field spectrum linewidth formula.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Ah General laser theory
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Parallel operation and crosstalk measurements in GaAs étalon optical logic devices

J. L. Jewell, Y. H. Lee, J. F. Duffy, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 48, 1342 (1986); http://dx.doi.org/10.1063/1.96955 (3 pages) | Cited 13 times

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We report the first parallel operation of GaAs optical logic elements and bistable devices. Arrays up to 2×4 in size were operated using a picosecond pump and probe technique, while in the bistable mode we achieved uniform response in two spots. Crosstalk due to carrier diffusion became noticeable at separations of typically ∼20–30 μm in the bistable devices. Pulsed operation at 82 MHz allowed separations down to ∼10 μm limited only by diffraction. Efficient heat sinking in the pulsed array resulted in negligible heating even when continually operated for many minutes. All experiments were performed at room temperature.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Magnetic and optical measurements on Ti:Al2O3 crystals for laser applications: Concentration and absorption cross section of Ti3+ ions

R. L. Aggarwal, A. Sanchez, R. E. Fahey, and A. J. Strauss

Appl. Phys. Lett. 48, 1345 (1986); http://dx.doi.org/10.1063/1.96904 (3 pages) | Cited 13 times

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The optical absorption coefficient of Ti:Al2O3 samples at 490 nm for the π polarization (E∥math) is found to be proportional to the concentration of Ti3+ ions, as determined by measurement of the paramagnetic moment as a function of temperature and magnetic field. The experimental data yield the value σ=(9.3±1.0)×10−20 cm2 for the absorption cross section of Ti3+, the active ion in the tunable Ti:Al2O3 laser, at the peak of the laser pump band.
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78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
42.55.Rz Doped-insulator lasers and other solid state lasers
75.30.Cr Saturation moments and magnetic susceptibilities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Performance of a hydrogen uranyl phosphate—carbon double‐layer solid capacitor

M. Pham‐Thi, Ph. Adet, G. Velasco, and Ph. Colomban

Appl. Phys. Lett. 48, 1348 (1986); http://dx.doi.org/10.1063/1.96905 (3 pages) | Cited 9 times

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A mixture of commercially available carbon black powders and hydrogen uranyl phosphate (HUP) precipitate can be used as the electrode material for miniaturized double‐layer capacitors. A solid cell of C‐HUP‖HUP‖C‐HUP has a capacitance of 1 F which, given the device area and thickness of 0.8 cm2 and 0.2 cm respectively, corresponds to an energy density of more than 5 J/cm3. The charge×voltage factor is higher than 5×10−6 s and the working voltage is over 1.6 V. The leakage current is lower than 3 μA at room temperature. The electrolyte can be operated up to about 120 °C if the device is hermetically sealed.
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84.32.Tt Capacitors

Effect of surface preparation on elastic precursor decay in shocked pure lithium fluoride

K. S. Tunison and Y. M. Gupta

Appl. Phys. Lett. 48, 1351 (1986); http://dx.doi.org/10.1063/1.96906 (3 pages) | Cited 8 times

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To understand the mechanisms for elastic precursor decay in pure 〈100〉 lithium fluoride (LiF) crystals under shock loading we have examined the role of large dislocation densities produced near the crystal surfaces by sample preparation. After unsuccessfully trying various methods to produce flat and undamaged samples, we chose to harden the surfaces by inward diffusion of magnesium fluoride (MgF2). A combination of heat treatments and other procedures was developed to ensure hardened or doped surfaces with a maximum depth of 600 μm and an undoped interior. Sample characterization was carried out using dislocation etch pit, hardness, and electron microprobe measurements. A 0.24‐mm sample, with MgF2 completely diffused through, gave a 16.7‐kbar precursor amplitude. A 2.93‐mm sample with a front diffusion layer of 0.14–0.39 mm and a back diffusion layer of 0.00–0.32 mm and undoped interior gave a precursor amplitude of 2.1 kbar. These experiments indicate that the surface damage layer does not control precursor decay in pure LiF crystals.
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62.50.-p High-pressure effects in solids and liquids
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
81.40.Lm Deformation, plasticity, and creep
62.30.+d Mechanical and elastic waves; vibrations

Stability of multilayers for synchrotron optics

E. Ziegler, Y. Lepetre, Ivan K. Schuller, and E. Spiller

Appl. Phys. Lett. 48, 1354 (1986); http://dx.doi.org/10.1063/1.96907 (3 pages) | Cited 45 times

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The temperature stability of metal (W, WRe, Co, Cr)‐carbon multilayers has been studied using x‐ray diffraction (θ–2θ and Debye–Scherrer) and electron microscopy. The results show that in all cases a crystallization occurs in the temperature range 650–750 °C. As a consequence of this crystallization, the layered structure is destroyed, the surface of the film becomes rough, and the x‐ray reflectivity is considerably reduced. These results imply that efficient cooling or new multilayer structures will have to be developed for use at high temperatures or under high x‐ray incident flux.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Gy Mechanical properties; surface strains
68.60.Dv Thermal stability; thermal effects
68.55.-a Thin film structure and morphology

Influence of low‐energy electron irradiation on the adhesion of gold films on a silicon substrate

H. Dallaporta and A. Cros

Appl. Phys. Lett. 48, 1357 (1986); http://dx.doi.org/10.1063/1.96908 (3 pages) | Cited 2 times

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Gold‐silicon interfaces have been studied under ultrahigh vacuum conditions. The interface growth, its characterization by Auger electron spectroscopy, and its irradiation by low‐energy (1–3 keV) electrons have all been carried out in situ. We have estimated the adhesion of the gold layer by the peeling test. The adhesion is good when Au is deposited on a clean Si substrate and poor when a native oxide (thickness ∼10–15 Å) is present at the interface. We show that the electron irradiation decomposes the oxide partially and this produces a drastic increase of the adhesion. The oxide decomposition is not thermally induced and is attributed to electronic effects. We suggest that the formation of Au–Si bonds at the interface is at the origin of the adhesion enhancement.
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68.35.Gy Mechanical properties; surface strains
68.35.Fx Diffusion; interface formation
61.80.Fe Electron and positron radiation effects

Low threshold laser operation at room temperature in GaAs/(Al,Ga)As structures grown directly on (100)Si

R. Fischer, W. Kopp, H. Morkoç, M. Pion, A. Specht, G. Burkhart, H. Appelman, D. McGougan, and R. Rice

Appl. Phys. Lett. 48, 1360 (1986); http://dx.doi.org/10.1063/1.96909 (2 pages) | Cited 30 times

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We report the room‐temperature pulsed operation of GaAs/(Al,Ga)As double heterojunction laser structures grown directly on (100)Si. Current thresholds of as low as 170 mA in 10‐μm‐wide stripe lasers have been achieved at 280 K. Power output as high as 44 mW per facet was also obtained. Assuming no current spreading, the corresponding current threshold density is 6.9 kA/cm2. Slope efficiencies and T0 values of 0.18 W/A and 165 K, respectively, have also been obtained. These results are directly attributable to the reduction of dislocations by choosing growth conditions and step density on the surface.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Influence of the near‐band‐edge surface states on the luminescence efficiency of InP

J. M. Moison, M. Van Rompay, and M. Bensoussan

Appl. Phys. Lett. 48, 1362 (1986); http://dx.doi.org/10.1063/1.96910 (3 pages) | Cited 16 times

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We report the first simultaneous measurements of the photoluminescence yield and of the basic electronic properties (density of states, position of the Fermi level) of InP surfaces subjected to various treatments under ultrahigh vacuum conditions. The surface densities of states located near the band edges are found to govern the surface recombination process. Annealing under As pressure which moves these densities out of the band gap is shown to yield a surface with low surface recombination, in agreeement with this framework.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.40.Tv Optical and dielectric properties related to treatment conditions

Dynamics of injected electron cooling in GaAs

J. R. Hayes, A. F. J. Levi, and W. Weigmann

Appl. Phys. Lett. 48, 1365 (1986); http://dx.doi.org/10.1063/1.96911 (3 pages) | Cited 4 times

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Using the technique of hot‐electron spectroscopy we have measured the change in hot‐electron spectra with transit region width enabling us to obtain a dynamic picture of injected hot‐electron cooling in n+ GaAs. All features in the spectra have been identified and ‘‘ballistic’’ transport has been observed for samples having narrow transit region widths (<850 Å) while near diffusive transport has been observed for samples having wide transit region widths (>1700 Å). With increasing transit region width, rather than the electron distribution shifting en masse to lower energies, electrons are removed from the initial injected peak and scattered to lower energies close to the Fermi energy. This process of electron cooling is dramatically illustrated by measuring the magnetic field dependence of the hot‐electron spectra.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.My Galvanomagnetic and other magnetotransport effects

Experimental realization of an n‐channel double heterostructure optoelectronic switch

G. W. Taylor, R. S. Mand, A. Y. Cho, and J. G. Simmons

Appl. Phys. Lett. 48, 1368 (1986); http://dx.doi.org/10.1063/1.96912 (3 pages) | Cited 7 times

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An n‐channel double heterostructure optoelectronic switch has been demonstrated. As in the case of the p‐channel device, there is a high impedance state without light emission and a low impedance state with strong spontaneous emission. The states are changed by optical or electrical signals and a digital optical gain of 14 is observed. The switching voltage is higher and the holding current is lower than in the p‐channel case.
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85.60.-q Optoelectronic devices
84.32.Dd Connectors, relays, and switches
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Reduction of iron solubility in silicon with oxygen precipitates

Etienne G. Colas and Eicke R. Weber

Appl. Phys. Lett. 48, 1371 (1986); http://dx.doi.org/10.1063/1.96913 (3 pages) | Cited 19 times

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The solubilities of iron in samples treated with various oxygen precipitation treatments were compared. The solubility of iron was reduced by almost two orders of magnitude in samples containing low‐temperature oxygen precipitates. It is suggested that a new phase forms, probably an oxygen‐metal rich compound that is more stable than the FeSi2 silicide. This study suggests dramatic improvements for the efficiency of gettering processes.
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64.75.-g Phase equilibria
66.30.J- Diffusion of impurities
76.30.Fc Iron group (3d) ions and impurities (Ti-Cu)
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Origin of ‘‘residual’’ persistent photoconductivity in selectively doped GaAs/AlxGa1−xAs heterojunctions

T. N. Theis and S. L. Wright

Appl. Phys. Lett. 48, 1374 (1986); http://dx.doi.org/10.1063/1.97028 (3 pages) | Cited 15 times

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We present experimental results which clearly separate the various physical mechanisms which cause persistent photoconductivity in GaAs/AlxGa1−xAs heterojunctions. For high Al mole fraction the major contribution is from the donor‐related DX center. This contribution is eliminated by reducing the Al mole fraction x, but we observe a ‘‘residual’’ effect for x≲0.2. We show that this is due to the persistent photovoltage developed between channel and semi‐insulating substrate. Charge trapping in the epitaxial GaAs buffer layer contributes negligibly, contrary to the assumptions of other workers. This is demonstrated by fabricating modulation‐doped field‐effect transistors of low Al mole fraction on conductive substrates. In these devices persistent photoconductivity is eliminated as long as the substrate (back gate) potential is fixed with respect to the channel.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.40.+w Photoconduction and photovoltaic effects
85.30.Tv Field effect devices

Effects of indium lattice hardening upon the growth and structural properties of large‐diameter, semi‐insulating GaAs crystals

S. McGuigan, R. N. Thomas, D. L. Barrett, H. M. Hobgood, and B. W. Swanson

Appl. Phys. Lett. 48, 1377 (1986); http://dx.doi.org/10.1063/1.96914 (3 pages) | Cited 19 times

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The high‐pressure liquid encapsulated Czochralski growth of indium lattice‐hardened GaAs, from 3 kg melts, has resulted in low‐dislocation, large‐diameter crystals which exhibit thermally stable, semi‐insulating properties. Post‐growth boule annealing is found to be an effective stress‐relief treatment, which assures high wafer yields and extremely uniform electrical properties. Observed reductions in dislocation density for mid 1019 cm−3 In‐doped GaAs substrates indicate an apparent 28‐fold increase in the critically resolved shear stress of this material over undoped GaAs near the melting point. Polished substrates obtained from these crystals exhibit very little subsurface damage, approaching high‐quality silicon wafers in this respect.
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81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
81.40.Lm Deformation, plasticity, and creep
81.10.Fq Growth from melts; zone melting and refining
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Photochemical vapor deposition of hydrogenated amorphous silicon films from disilane and trisilane using a low pressure mercury lamp

Ken Kumata, Uichi Itoh, Yasutake Toyoshima, Naoki Tanaka, Hiroyuki Anzai, and Akihisa Matsuda

Appl. Phys. Lett. 48, 1380 (1986); http://dx.doi.org/10.1063/1.96915 (3 pages) | Cited 10 times

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The photolysis of disilane (Si2H6) and trisilane (Si3H8) under direct excitation by light from a low pressure mercury lamp was carried out to prepare hydrogenated amorphous silicon films (a‐Si:H). The electronic and optical properties of the films were investigated as functions of preparation conditions such as partial pressure and substrate temperature. The conductivity of the films prepared from Si3H8 at 300 °C was 10−10 S cm−1 in the dark and 10−5 S cm−1 under the illumination of a He‐Ne laser with a photon flux of 1015 cm−2 s−1. The high photoconductivity was attained when the silane gas was blown over the substrate from a slit‐type nozzle placed beside the substrate plate at a pressure of less than 20 Torr.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.50.-m Photochemistry
81.40.Tv Optical and dielectric properties related to treatment conditions
81.40.Rs Electrical and magnetic properties related to treatment conditions

Photoluminescence studies of ZnTe‐CdTe strained‐layer superlattices

R. H. Miles, G. Y. Wu, M. B. Johnson, T. C. McGill, J. P. Faurie, and S. Sivananthan

Appl. Phys. Lett. 48, 1383 (1986); http://dx.doi.org/10.1063/1.96916 (3 pages) | Cited 35 times

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Photoluminescence from ZnTe‐CdTe strained‐layer superlattices has been observed for the first time. Superlattices with CdTe and ZnTe layer thicknesses between 20 and 51 Å have been compared with CdxZn1−xTe alloys. The superlattices display intense visible photoluminescence which is observed at lower energies than for corresponding alloys. Both the intensities and energies of the luminescence indicate good superlattice structure. Second order k⋅p calculations have been performed and are found to be in agreement with experiment. Substrates greatly lattice mismatched to the superlattice are shown not to play a role in determining the band gap as the lattice constant jumps to that of the free‐standing superlattice.
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78.40.Fy Semiconductors
75.20.Ck Nonmetals
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Double‐injection field‐effect transistor: A new type of solid‐state device

M. Hack, M. Shur, and W. Czubatyj

Appl. Phys. Lett. 48, 1386 (1986); http://dx.doi.org/10.1063/1.96917 (3 pages) | Cited 7 times

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We propose a new general principle of operation for solid‐state devices, and demonstrate a novel transistor which we call a double‐injection field‐effect transistor, based on this principle. We have fabricated amorphous silicon alloy double‐injection transistors operating on the modulation of a double‐injection current by a gate field covering the complete path of the current channel. Using these amorphous silicon alloy double‐injection transistors, we have achieved currents over 20 times those theoretically possible for conventional amorphous silicon field‐effect transistors operating under similar conditions. This new principle, applicable to both thin‐film amorphous and crystalline devices, offers the potential of high‐current, high‐speed field‐effect transistors with modulated optical emission.
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85.30.Tv Field effect devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Direct measurements of the velocity and thickness of ‘‘explosively’’ propagating buried molten layers in amorphous silicon

D. H. Lowndes, G. E. Jellison, S. J. Pennycook, S. P. Withrow, and D. N. Mashburn

Appl. Phys. Lett. 48, 1389 (1986); http://dx.doi.org/10.1063/1.96918 (3 pages) | Cited 41 times

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Simultaneous infrared (1152 nm) and visible (633 nm) reflectivity measurements with nanosecond resolution were used to study the initial formation and subsequent motion of pulsed KrF laser‐induced ‘‘explosively’’ propagating buried molten layers in ion implantation‐amorphized silicon. The buried layer velocity decreases with depth below the surface, but increases with KrF laser energy density; a maximum velocity of about 14 m/s was observed, implying an undercooling‐velocity relationship of ∼14 K/(m/s). Z‐contrast scanning transmission electron microscopy was used to form a direct chemical image of implanted Cu ions transported by the buried layer and showed that the final buried layer thickness was <15 nm.
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81.30.Fb Solidification
64.70.D- Solid-liquid transitions
81.40.Tv Optical and dielectric properties related to treatment conditions
65.20.-w Thermal properties of liquids
65.40.gd Entropy

High‐throughput high‐yield fabrication of selectively doped AlxGa1−xAs/GaAs heterostructures by molecular beam epitaxy

Klaus Ploog and Albrecht Fischer

Appl. Phys. Lett. 48, 1392 (1986); http://dx.doi.org/10.1063/1.96919 (3 pages) | Cited 17 times

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A new etching procedure for GaAs substrates and a modified configuration of selectively doped n‐AlxGa1−xAs/GaAs heterostructures have been developed for molecular beam epitaxy to reduce the density of oval defects and the epitaxial growth time. The new simplified substrate preparation method reduces the oval defect density to less than 100 cm−2 and allows storage of prepared substrates in air under dust‐free conditions for several weeks without any degradation. Modification of the layer structure reduces the throughput time to less than 30 min per wafer including epitaxial growth, wafer exchange, heat and cool times. High mobilities of the two‐dimensional electron gas and excellent reproducibility are achieved. The new process uses the favorable growth rate of <1 μm/h for GaAs and thus allows growth of nearly 500 high‐quality heterostructure wafers for device fabrication without exposure of the growth chamber to atmosphere for effusion cell recharging.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.65.-b Surface treatments
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
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