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26 May 1986

Volume 48, Issue 21, pp. 1413-1493

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Direct measurement of the electric‐field‐dependent absorption coefficient in GaAs/AlGaAs multiple quantum wells

Thomas H. Wood

Appl. Phys. Lett. 48, 1413 (1986); http://dx.doi.org/10.1063/1.96924 (3 pages) | Cited 11 times

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Although large changes in the absorption coefficient of multiple quantum wells (MQW’s) with applied voltage have been reported, no accurate measurement of the minimum absorption coefficient, which determines the absorption component of the device insertion loss, has been reported. Using a new measurement technique, we measure this minimum absorption coefficient, and determine that, for a device with a 10:1 on/off ratio and a 7 dB insertion loss, absorption contributes 2.2 dB of the insertion loss. We are able to predict absorption losses of future devices and show that, by a slight change in operating wavelength, the absorption loss can be greatly reduced.
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78.20.Jq Electro-optical effects
85.60.-q Optoelectronic devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
07.60.-j Optical instruments and equipment

InGaAs/InP p‐i‐n photodiodes grown by chemical beam epitaxy

W. T. Tsang and J. C. Campbell

Appl. Phys. Lett. 48, 1416 (1986); http://dx.doi.org/10.1063/1.96925 (3 pages) | Cited 5 times

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Two types of mesa‐type InGaAs/InP p‐i‐n photodiodes have been fabricated from wafers grown by chemical beam epitaxy (CBE): (1) a conventional diffused InGaAs homojunction and (2) a novel InP/InGaAs/InP double heterojunction. Both types of devices have exhibited very low dark current, good quantum efficiency of 70% (without antireflection coatings), and transit‐time‐limited pulse response. The lowest dark currents, less than 1 nA at −10 V bias, have been achieved with the double heterojunction devices in spite of the fact that the p‐n junction is coincident with a heterojunction interface. This attests to the excellent quality of heterojunction interfaces grown by CBE. These results also unequivocally established that CBE is capable of producing high quality multilayer heterostructures for state‐of‐the‐art device applications.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

InGaAsP distributed feedback multiquantum well laser

N. K. Dutta, S. G. Napholtz, A. B. Piccirilli, and G. Przybylek

Appl. Phys. Lett. 48, 1419 (1986); http://dx.doi.org/10.1063/1.96926 (3 pages) | Cited 8 times

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The fabrication and performance characteristics of 1.3 μm InGaAsP distributed feedback (DFB) lasers with multiquantum well (MQW) active layers are reported. The lasers are of the double channel planar buried heterostructure type and utilize a second order grating with a periodicity of ∼3900 Å for frequency selective feedback. The lasers have threshold currents in the range 25–35 mA at 30 °C and external differential quantum efficiencies of 0.2 mW/mA/facet at 30 °C. The temperature dependence of threshold current is characterized by a T0 value of 95–100 K. The lasers have been operated to an output power of 19 mW in a single frequency. The measured dynamic linewidth under modulation is a factor of 2 smaller than that for regular double heterostructure lasers. The lower temperature dependence of threshold current and smaller dynamic linewidth make real index guided InGaAsP DFB MQW active layer lasers attractive for many system applications.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Deposition of oriented zinc oxide on an optical fiber

B. L. Heffner and B. T. Khuri‐Yakub

Appl. Phys. Lett. 48, 1422 (1986); http://dx.doi.org/10.1063/1.96927 (2 pages) | Cited 5 times

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Techniques are described by which an oriented zinc oxide film is sputtered directly on one side of an 80‐μm‐diam fused silica single‐mode optical fiber. A 4‐GHz piezoelectric transducer incorporating this film demonstrates that the film is oriented. Evidence of acoustic waves in the fiber is given by the swept‐frequency vector input impedance of the transducer. Acoustic transducers fabricated directly on a fiber produce fields focused on the fiber core for efficient acousto‐optic interactions, making possible many new fiber‐optic signal processing devices.
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42.81.Bm Fabrication, cladding, and splicing
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.38.Zp Acoustooptic and photoacoustic transducers

Phase locked narrow zinc diffused stripe laser arrays

C. A. Zmudzinski, L. J. Mawst, M. E. Givens, M. A. Emanuel, and J. J. Coleman

Appl. Phys. Lett. 48, 1424 (1986); http://dx.doi.org/10.1063/1.96928 (3 pages)

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Phase locked operation of an array of narrow diffused stripe conventional double heterostructure laser elements grown by metalorganic chemical vapor deposition is reported. Six‐element arrays (length 356 μm) show threshold currents of 33 mA per stripe and peak power outputs of at least 160 mW per facet with total external differential quantum efficiencies of 33%. Complex near‐field patterns are shown which result from two opposing mechanisms involved in guiding of the lateral modes. Three major lobes in far‐field patterns, which correspond to expected patterns for the lateral modes of gain guided arrays, are described.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices
66.30.J- Diffusion of impurities

Annealing of Si damage caused by reactive ion etching in SF6 gas mixtures

R. Pinto, R. Sachidananda Babu, and P. K. Bhattacharya

Appl. Phys. Lett. 48, 1427 (1986); http://dx.doi.org/10.1063/1.96878 (3 pages) | Cited 4 times

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Damage introduced in silicon during reactive ion etching (RIE) in SF6 gas mixtures has been studied using x‐ray photoelectron spectroscopy, Schottky barrier measurements, and Rutherford backscattering. RIE was done at 0.1 W cm−2 power density with the rf cathode covered with a quartz plate, and the annealing behavior of damage was studied at various temperatures up to 800 °C in N2 ambient. The results obtained indicate the following: (a) contamination by F, S, and metal ions is insignificant; (b) lighter atoms such as hydrogen cause higher electrical damage and lower lattice damage, both of which can be annealed at 400 °C; (c) heavier atoms such as argon cause lower electrical damage but higher lattice damage which requires a temperature ≥800 °C for recovery.
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61.80.Jh Ion radiation effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.65.-b Surface treatments

Rutherford backscattering study of the photodissolution of Ag in amorphous GeSe2

J. Rennie, S. R. Elliott, and C. Jeynes

Appl. Phys. Lett. 48, 1430 (1986); http://dx.doi.org/10.1063/1.96879 (3 pages) | Cited 5 times

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Amorphous GeSe2 films with Ag overlayers have been illuminated in situ in a Rutherford backscattering chamber and the evolution of the silver depth profile as a function of illumination time has been studied. The silver distribution in the doped region is found to be steplike as had earlier been seen in the system Ag/As2S3 and the composition of the photodoped product is approximately Ag1.1GexSe3−x. During the course of the reaction the silver/glass interface develops irregularities possibly due to the formation of silver islands.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.80.Jh Ion radiation effects

Dopant redistribution during Pd2Si formation using rapid thermal annealing

N. S. Alvi, D. L. Kwong, C. G. Hopkins, and S. G. Bauman

Appl. Phys. Lett. 48, 1433 (1986); http://dx.doi.org/10.1063/1.96880 (3 pages) | Cited 1 time

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Rapid thermal annealing has been used to form Pd2Si by reacting thin layers of Pd metal on As‐implanted Si. An enhanced growth rate for the Pd2Si has been measured, which does not obey the diffusion limited growth kinetics as reported for the furnace reacted Pd2Si. The growing Pd2Si results in As redistribution which is sufficient to displace the shallow p‐n junction as the silicide/silicon interface approaches the junction position. The As‐implanted profile changes little in the Pd2Si region, with As accumulating at the leading edge of the silicide/silicon interface.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
66.30.J- Diffusion of impurities
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Transmission electron microscopic observations of amorphous NiZr alloy formation by solid‐state reaction

S. B. Newcomb and K. N. Tu

Appl. Phys. Lett. 48, 1436 (1986); http://dx.doi.org/10.1063/1.96881 (3 pages) | Cited 58 times

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The interdiffusion of nickel and zirconium by a solid‐state reaction to form an amorphous NiZr alloy has been followed by transmission electron microscopy. Cross‐sectional examination of NiZr bilayers annealed at 300 °C has shown the formation of amorphous NiZr and the development of large voids in the nickel neighboring the Ni/NiZr interface. Our results indicate that nickel is the dominant diffusing species in the amorphous alloy and that the diffusion requires a defect mechanism. Prolonged annealing at 300 °C results in the formation of a crystalline NiZr phase, which co‐exists with the amorphous alloy.
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68.35.Fx Diffusion; interface formation
64.70.K- Solid-solid transitions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
66.30.Ny Chemical interdiffusion; diffusion barriers

Analysis of switching transients in KNO3 ferroelectric memories

C. Araujo, J. F. Scott, R. Bruce Godfrey, and L. McMillan

Appl. Phys. Lett. 48, 1439 (1986); http://dx.doi.org/10.1063/1.96882 (2 pages) | Cited 23 times

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We have measured the switching current transient i(t) versus time for 75‐nm‐thick KNO3 nonvolatile memories having address voltages of 6.3 V and switching times 20–30 ns. The currents are minimum (nearly zero) at t=0 and exhibit a symmetric shape about their maxima at 23±2 ns. This is compatible with Fatuzzo’s theory of sideways domain growth [Phys. Rev. 127, 1999 (1962)] as well as with our earlier results on thickness dependence of coercive field Ec∼d−1.3 and field dependence of switching times ts∼E−1.5. All of the results show that domain growth speed transverse to the applied field is the rate‐limiting parameter.
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77.80.Dj Domain structure; hysteresis
73.61.Ng Insulators
77.55.-g Dielectric thin films
81.40.Rs Electrical and magnetic properties related to treatment conditions

Comparison of crystal orientation dependence for the solid phase epitaxial process in ion implanted Si and GaAs

C. Licoppe, Y. I. Nissim, and P. Henoc

Appl. Phys. Lett. 48, 1441 (1986); http://dx.doi.org/10.1063/1.96883 (3 pages) | Cited 15 times

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Solid phase epitaxial (SPE) regrowth is studied using the time‐resolved reflectivity technique in ion implanted semiconductors with different substrate orientations. In silicon evidence for a planar (100) growth front and a roughening (111) growth front is given. In GaAs the crystal/amorphous interface roughness is shown to increase with recrystallized depths in the (100) and (111) direction, the latter having the most degraded interfacial structure. The (110) substrate orientation in GaAs is shown to have a more stable interface during growth. The growth rate and activation energy of the SPE process is conserved in all GaAs orientations. While regrowth in silicon agrees qualitatively with the general crystal growth approach to growth on flat faces and kinked faces, the departure of GaAs from this scheme is explained by chemical disorder. Results support the hypothesis that the crystal/amorphous GaAs interface is rough and microfaceted in the (111) directions.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.55.-a Thin film structure and morphology
68.35.Gy Mechanical properties; surface strains
68.35.B- Structure of clean surfaces (and surface reconstruction)

Low‐temperature elastic properties of the permanent magnet compound Nd2Fe14B

D. Dadon, M. P. Dariel, Y. Gefen, H. Klimker, and M. Rosen

Appl. Phys. Lett. 48, 1444 (1986); http://dx.doi.org/10.1063/1.96884 (2 pages) | Cited 2 times

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The velocity of longitudinal and transverse sound waves was measured between 77 and 300 K and used to determine the Young modulus, the shear modulus, and the adiabatic compressibility of the polycrystalline, strong permanent magnet compound, Nb2Fe14B. The spin reorientation occurring near 150 K appears as an anomaly in the temperature dependence of the elastic moduli. The ΔE effect is of the order of 0.5% at 77 K.
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62.20.D- Elasticity
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.80.+q Magnetomechanical effects, magnetostriction
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

Superlattice GaAs mixed tunneling avalanche transit time device structure

A. Christou and K. Varmazis

Appl. Phys. Lett. 48, 1446 (1986); http://dx.doi.org/10.1063/1.96885 (3 pages) | Cited 6 times

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A superlattice GaAs‐Ga0.7Al0.3As mixed tunneling avalanche transit time device has been fabricated and tested at 94 GHz. Two superlattice regions are utilized in order to control the avalanche and the drift currents. The superlattice in the avalanche region enhances the electron ionization rate by a factor of 8, while the superlattice in the drift region maximizes the tunneling current. At 94 GHz, pulsed output power of 0.2–0.4 W was obtained.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
85.60.Dw Photodiodes; phototransistors; photoresistors

Growth of GaN films using trimethylgallium and hydrazine

D. K. Gaskill, N. Bottka, and M. C. Lin

Appl. Phys. Lett. 48, 1449 (1986); http://dx.doi.org/10.1063/1.96886 (3 pages) | Cited 28 times

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Hydrazine has been used as a nitrogen source for the organometallic vapor phase deposition of GaN using trimethylgallium and a nitrogen carrier gas in the temperature range 425–960 °C. Hydrazine and trimethylgallium form an adduct at room temperature which decomposes over the substrate with an activation energy of 1 eV for temperatures below 650 °C. No carbon has been detected by Auger spectroscopy in the films. The electrical properties are dominated by oxygen impurities, probably originating from the hydrazine. Since hydrazine readily decomposes above 400 °C, it is a better source of nitrogen for low‐temperature depositions than other, more stable nitrogen sources.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

GaInAs/GaAs strained‐layer superlattices grown by low pressure metalorganic vapor phase epitaxy

A. P. Roth, M. Sacilotti, R. A. Masut, P. J. D’Arcy, B. Watt, G. I. Sproule, and D. F. Mitchell

Appl. Phys. Lett. 48, 1452 (1986); http://dx.doi.org/10.1063/1.96887 (3 pages) | Cited 6 times

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Strained‐layer superlattices (SLS’s) of GaxIn1−xAs/GaAs (x≂0.8–0.9) have been grown by low pressure metalorganic vapor phase epitaxy. The reactants were trimethylgallium, trimethylindium, and arsine. The structures were characterized by Auger profiling and low‐temperature photoluminescence. These measurements show that high quality SLS’s with interface widths no larger than 25 Å and very narrow luminescence peaks (6.5 meV) similar to the best structures grown by molecular beam epitaxy, can be easily grown by low pressure metalorganic vapor phase epitaxy.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.40.Fy Semiconductors

Optical properties of InGaAs‐InP single quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition

M. S. Skolnick, P. R. Tapster, S. J. Bass, N. Apsley, A. D. Pitt, N. G. Chew, A. G. Cullis, S. P. Aldred, and C. A. Warwick

Appl. Phys. Lett. 48, 1455 (1986); http://dx.doi.org/10.1063/1.96888 (3 pages) | Cited 31 times

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Low‐temperature photoluminescence and photoconductivity studies of high quality InGaAs‐InP quantum wells grown by metalorganic chemical vapor deposition at atmospheric pressure are reported. The best luminescence linewidth obtained for a 100‐Å well is found to be 7.9 meV. The residual line broadening is discussed in terms of interface fluctuations, and is compared directly with structural properties as determined by high resolution lattice imaging transmission electron microscopy.
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78.40.Fy Semiconductors
75.20.Ck Nonmetals
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.40.+w Photoconduction and photovoltaic effects

Absence of Fermi level pinning at metal‐InxGa1−xAs(100) interfaces

L. J. Brillson, M. L. Slade, R. E. Viturro, M. K. Kelly, N. Tache, G. Margaritondo, J. M. Woodall, P. D. Kirchner, G. D. Pettit, and S. L. Wright

Appl. Phys. Lett. 48, 1458 (1986); http://dx.doi.org/10.1063/1.97027 (3 pages) | Cited 20 times

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Soft x‐ray photoemission spectroscopy measurements of clean, ordered InxGa1−xAs (100) surfaces with Au, In, Ge, or Al overlayers reveal an unpinned Fermi level across the entire In alloy series. The Fermi level stabilization energies depend strongly on the particular metal and differ dramatically from those of air‐exposed interfaces. This wide range of Schottky barrier height for III‐V compounds is best accounted for by a chemically induced modification in metal‐alloy composition.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
73.20.-r Electron states at surfaces and interfaces
66.30.Ny Chemical interdiffusion; diffusion barriers

Optoelectronic integrated AlGaAs/GaAs p‐i‐n/field‐effect transistor with an embedded, planar p‐i‐n photodiode

S. Miura, O. Wada, M. Makiuchi, and K. Nakai

Appl. Phys. Lett. 48, 1461 (1986); http://dx.doi.org/10.1063/1.96889 (3 pages) | Cited 2 times

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A new planarization technique for fabricating an optoelectronic integrated circuit (OEIC) has been developed. A photodiode has been perfectly embedded in a semi‐insulating GaAs substrate with a high uniformity over the wafer. A monolithically integrated p‐i‐n photodiode/field‐effect transistor (FET) has been successfully fabricated by applying this technique. This result indicates that the present technique is promising for the application to fabricating not only p‐i‐n/FET but also larger scale OEIC receivers and transmitters.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Tv Field effect devices
42.82.-m Integrated optics

Coherent instabilities in p‐i‐n avalanche GaAs diodes up to submillimeter frequency range

D. Lippens and J. L. Nieruchalski

Appl. Phys. Lett. 48, 1464 (1986); http://dx.doi.org/10.1063/1.96890 (3 pages) | Cited 2 times

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Many‐particle numerical simulations of impact ionization in submicron GaAs p‐i‐n diodes reveal coherent fluctuations up to the millimeter‐wave range. The analysis of the auto and cross correlations of fluctuating quantities demonstrates that these spontaneous oscillations result from the delay in excess carrier generation by impact ionization owing to carrier energy relaxation effects rather than the appearance of a negative differential carrier mobility. With regard to this phenomenon, it is believed that the energy relaxation mode of operation of avalanche oscillators may be considered.
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85.30.De Semiconductor-device characterization, design, and modeling
72.20.Ht High-field and nonlinear effects
79.70.+q Field emission, ionization, evaporation, and desorption

Rapid thermal annealing of Mg++As+ dual implants in GaAs

Kalpesh K. Patel and Brian J. Sealy

Appl. Phys. Lett. 48, 1467 (1986); http://dx.doi.org/10.1063/1.96891 (3 pages) | Cited 22 times

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Mg+ and As+ ions were implanted into GaAs to study the effects of dual implantation on the electrical properties. Increased electrical activity and significantly less redistribution of the magnesium were observed for the dual implants compared with the single implants. A maximum activity of 40% with a sheet resistivity as low as 185 Ω/☒ was obtained for the dual implant compared to an activity of 27% with a resistivity of 250 Ω/☒ for the single implant at a dose of 1015 cm−2. A peak hole concentration approaching 4×1019 cm−3 was recorded for the dual implant annealed at 900 °C for 30 s.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

SiO2 buried layer formation by subcritical dose oxygen ion implantation

J. Stoemenos, J. Margail, C. Jaussaud, M. Dupuy, and M. Bruel

Appl. Phys. Lett. 48, 1470 (1986); http://dx.doi.org/10.1063/1.96892 (3 pages) | Cited 32 times

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The structure of the silicon dioxide buried layer formed by oxygen ion implantation at a subcritical dose i.e., 1.3×1018 ion cm−2 at 200 keV is studied. The beneficial effect of a high annealing temperature at 1300 °C for 6 h is discussed. A method for estimation of the total amount of SiO2 precipitated in the silicon overlayer is also presented, and these results are correlated with published electrical measurements.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.uf Ge and Si
81.40.Rs Electrical and magnetic properties related to treatment conditions

Optical absorption characteristics in semi‐insulating GaAs crystals

Yoh Mita

Appl. Phys. Lett. 48, 1473 (1986); http://dx.doi.org/10.1063/1.96893 (3 pages) | Cited 6 times

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Bleaching and related optical characteristics investigations have been carried out on near‐infrared absorption bands in undoped, semi‐insulating GaAs to examine the nature of As‐rich defects relevant to the absorption. The results obtained for preferential bleaching characteristics have led to the conclusion that the defects responsible for the absorption are not likely to be isolated defects or a single species of simple associated defects.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.30.Hv Other nonmetallic inorganics
61.72.jn Color centers

Luminescence investigations of highly strained‐layer InAs‐GaAs superlattices

P. Voisin, M. Voos, J. Y. Marzin, M. C. Tamargo, R. E. Nahory, and A. Y. Cho

Appl. Phys. Lett. 48, 1476 (1986); http://dx.doi.org/10.1063/1.96894 (3 pages) | Cited 15 times

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We describe photoluminescence investigations in InAs‐GaAs superlattices in the thin layer limit (10–20 Å). The data, which are compared to theoretical results obtained from band structure calculations, yield an estimate of the conduction‐band discontinuity of 550 meV at the interfaces. They also show that although the superlattice has a band gap (765 meV) close in energy to that of the corresponding bulk InxGa1−xAs alloy (800 meV), the band structures are very different. In the superlattice, electrons and light holes appear to be the important carriers, and they tend to be spatially separated, to the extent that this is meaningful in the thin layer limit.
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78.40.Fy Semiconductors
75.20.Ck Nonmetals
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Two‐wavelength absorption modulation spectroscopy of bandtail absorption in GaAs quantum wells

A. Von Lehmen, J. E. Zucker, J. P. Heritage, D. S. Chemla, and A. C. Gossard

Appl. Phys. Lett. 48, 1479 (1986); http://dx.doi.org/10.1063/1.96895 (3 pages) | Cited 17 times

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We have discovered that below‐band‐gap photoexcitation produces large bleaching of the exciton absorption in GaAs quantum well heterostructures. We have used this effect to perform the first investigation of room‐temperature bandtail absorption in these structures. We find that the below‐band‐gap absorption follows a spectral Urbach’s rule. In addition, proton‐bombarded samples show an Urbach energy correlated with bombardment‐induced defects. This sensitive technique has enabled us to study samples as thin as 1 μm at energies where the absorption coefficient is ∼10 cm−1.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Two‐dimensional metastable magnetic semiconductor structures

L. A. Kolodziejski, R. L. Gunshor, N. Otsuka, B. P. Gu, Y. Hefetz, and A. V. Nurmikko

Appl. Phys. Lett. 48, 1482 (1986); http://dx.doi.org/10.1063/1.96896 (3 pages) | Cited 41 times

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Metastable zinc‐blende MnSe has been grown by molecular beam epitaxy. The magnetic semiconductor has been incorporated into three novel superlattice structures which include a binary ZnSe/MnSe superlattice, a comb superlattice, and a ZnSe/(Zn,Mn)Se superlattice structure consisting of ZnSe wells perturbed by the insertion of ultrathin layers (two to three monolayers) of MnSe. Reflection high‐energy electron diffraction and transmission electron microscopy reveal the zinc‐blende crystal structure of the MnSe layers. Preliminary optical measurements show agreement with anticipated exciton emission energies; such spectra show large magnetic field induced shifts indicating that, although MnSe is antiferromagnetic, these ‘‘two‐dimensional’’ magnetic sheets exhibit paramagnetic behavior.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology
78.20.Ls Magneto-optical effects
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
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