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9 Jun 1986

Volume 48, Issue 23, pp. 1559-1625


Nonlinear excitonic absorption in (Zn,Mn)Se superlattices and ZnSe films

D. R. Andersen, L. A. Kolodziejski, R. L. Gunshor, S. Datta, A. E. Kaplan, and A. V. Nurmikko

Appl. Phys. Lett. 48, 1559 (1986); http://dx.doi.org/10.1063/1.96866 (3 pages) | Cited 10 times

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Optical transmission studies have been performed on ZnSe thin films and two (Zn,Mn)Se superlattices (Eg≂2.8 eV) of varying barrier compositions and well widths grown by molecular beam epitaxy. The excitons in these samples ranged in character from three dimensional to quasi two dimensional. The spectra, obtained at 77 K as a function of incident light intensity, clearly show the saturation of the excitonic resonance. This is the first demonstration of nonlinear excitonic absorption in the (Zn,Mn)Se system. Mechanisms for the saturation are discussed with estimates for the relative contributions from Coulombic screening and phase space filling.
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75.20.Ck Nonmetals
71.35.-y Excitons and related phenomena
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

cw double cross pumping of the 5I7–5I8 laser transition in Ho3+‐doped garnets

E. W. Duczynski, G. Huber, V. G. Ostroumov, and I. A. Shcherbakov

Appl. Phys. Lett. 48, 1562 (1986); http://dx.doi.org/10.1063/1.96867 (2 pages) | Cited 33 times

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We obtained for the first time efficient room‐temperature cw lasing at 2.086 μm in Cr,Tm,Ho:YScAl‐garnet and Cr,Tm,Ho:YScGa‐garnet crystals. Double cross pumping via Cr3+ and Tm3+ with a krypton pump laser yields threshold pump powers of 25 mW and slope efficiencies up to 13%. Broad band pumping can also be expected.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.-f Lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Generation of high peak power subpicosecond pulses in the 1.0–1.6 μm range by parametric amplification in an organic crystal

I. Ledoux, J. Zyss, A. Migus, J. Etchepare, G. Grillon, and A. Antonetti

Appl. Phys. Lett. 48, 1564 (1986); http://dx.doi.org/10.1063/1.96868 (3 pages) | Cited 19 times

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High peak power subpicosecond optical pulses have been generated by parametric amplification of a white‐light femtosecond continuum in a new organic crystal, N‐(4‐nitrophenyl)‐L‐prolinol or (NPP), with an emission spectrum extending in the 1.0–1.6 μm range.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.30.Jw Organic compounds, polymers

Photorefractive oscillation with intracavity image and multimode fiber

Baruch Fischer, Shmuel Sternklar, and Shimon Weiss

Appl. Phys. Lett. 48, 1567 (1986); http://dx.doi.org/10.1063/1.96869 (3 pages) | Cited 5 times

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A photorefractive oscillation between two cascaded passive phase conjugate mirrors (2C‐PPCM) with intracavity phase and amplitude modulation and multimode fibers is described. The two semilinear PPCM’s operate via four wave mixing in BaTiO3 crystals. A single beam pumps only one PPCM and generates all other self‐starting beams of the two PPCM’s
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.81.Wg Other fiber-optical devices
78.20.Jq Electro-optical effects

High‐brightness green‐emitting electroluminescent devices with ZnS:Tb,F active layers

T. Ogura, A. Mikami, K. Tanaka, K. Taniguchi, M. Yoshida, and S. Nakajima

Appl. Phys. Lett. 48, 1570 (1986); http://dx.doi.org/10.1063/1.96870 (2 pages) | Cited 22 times

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The dependence of brightness on the concentration ratio of fluorine to terbium was studied in thin‐film electroluminescent devices with rf‐sputtered ZnS:Tb,F active layers. It was found that the device exhibits a maximum brightness at the concentration ratio of about 1. By optimizing not only the concentration ratio but also the terbium concentration, a brightness more than 300 fL is obtained under 1 kHz pulse excitation.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
75.20.Ck Nonmetals
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

InGaAsP laser with semi‐insulating current confining layers

N. K. Dutta, J. L. Zilko, T. Cella, D. A. Ackerman, T. M. Shen, and S. G. Napholtz

Appl. Phys. Lett. 48, 1572 (1986); http://dx.doi.org/10.1063/1.96871 (2 pages) | Cited 16 times

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The fabrication and performance characteristics of a InGaAsP laser structure with semi‐insulating current confining layers are reported. The semi‐insulating layers are Fe‐doped InP and are grown using the metalorganic chemical vapor deposition growth technique. The lasers have threshold currents in the range 20–30 mA and external differential quantum efficiency ∼0.2 mW/mA/facet at 30 °C. The bandwidth for small‐signal response is ∼2 GHz which suggests that the laser structure is suitable for high bit rate lightwave transmission systems. Initial aging results yield an estimated operating lifetime of 10 years at 20 °C.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

High efficiency XeCl laser with spiker and magnetic isolation

Charles H. Fisher, Mark J. Kushner, Terence E. DeHart, John P. McDaniel, Rodney A. Petr, and J. J. Ewing

Appl. Phys. Lett. 48, 1574 (1986); http://dx.doi.org/10.1063/1.96872 (3 pages) | Cited 37 times

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High efficiency x‐ray preionized discharge XeCl laser excitation has been achieved by combining spiker/sustainer excitation techniques with a simple and reliable magnetic isolator. The troublesome rail‐gap switch has been eliminated by using the laser discharge itself as the switch. An efficiency of 4% with 2.7 J optical energy was demonstrated.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Diffraction‐corrected subsurface imaging with a scanning laser acoustic microscope

Rolf K. Mueller, William P. Robbins, Z. Q. Zhou, and Eric Rudd

Appl. Phys. Lett. 48, 1577 (1986); http://dx.doi.org/10.1063/1.96873 (2 pages) | Cited 1 time

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A back projection (acoustic holography) algorithm has been developed and implemented on a computer‐controlled scanning laser acoustic microscope. The algorithm permits the reconstruction of clear well‐defined images of acoustic features which are far below (by tens of acoustic wavelengths) the laser‐scanned surface of the substrate. In essence, the algorithm corrects for the diffraction of the incident acoustic beam caused by the feature being insonified. Experimental results obtained using an electron microscope locator grid as the test feature and a compressional wave source of 100 MHz are presented.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Yb Ultrasonic instrumentation and measurement techniques
43.60.Sx Acoustic holography
43.58.Ls Acoustical lenses and microscopes

Guided‐wave acousto‐optic interaction in proton‐exchanged Y‐cut LiNbO3

A. L. Dawar, S. M. Al‐Shukri, and R. M. De La Rue

Appl. Phys. Lett. 48, 1579 (1986); http://dx.doi.org/10.1063/1.96874 (3 pages) | Cited 8 times

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We report for the first time results for acousto‐optic interaction in proton‐exchange waveguides in Y‐LiNbO3. The value of acousto‐optic diffraction efficiency was as high as 72% for an electrical input power of 540 mW at 425 MHz.
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42.79.Gn Optical waveguides and couplers
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography

Edge effects on foil fuses

E. M. Waisman, E. M. Kennedy, and D. E. Parks

Appl. Phys. Lett. 48, 1582 (1986); http://dx.doi.org/10.1063/1.96875 (3 pages)

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We investigate the edge effect on foil fuses in a cylindrical enclosure containing a tamping medium. This type of fuse is being considered for use in microsecond switching of high power electromagnetic pulses. By using the exact magnetostatic solution for axial current lines in a cylindrical enclosure, we find a circuitlike model for the foil fuse and the driving external circuit. The foil resistivity is a function of the joule heat per unit volume dissipated at each position along the width of the foil. In the extreme example given in this letter, we find that the strong edge effects observed at the beginning of the pulses ‘‘heal’’ faster than the time it takes for the foil to switch and hence, edge effects, even in such cases are not important.
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84.32.Vv Fuses
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Pulsed laser treatment of diamondlike carbon films

S. Prawer, R. Kalish, and M. Adel

Appl. Phys. Lett. 48, 1585 (1986); http://dx.doi.org/10.1063/1.96876 (3 pages) | Cited 24 times

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Conducting (10−1 Ω cm) pathways have been directly written into an insulating (106 Ω cm) diamondlike carbon film using pulsed laser irradiation (0.53 μm). The morphological and structural changes caused by the laser suggest that the film has been transformed into a form of graphite preserving some of the diamondlike properties of the original coating.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
73.61.Ng Insulators
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
68.55.-a Thin film structure and morphology

Layer intermixing in HgTe‐CdTe superlattices

David K. Arch, J. L. Staudenmann, and J. P. Faurie

Appl. Phys. Lett. 48, 1588 (1986); http://dx.doi.org/10.1063/1.96877 (3 pages) | Cited 17 times

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High‐temperature x‐ray diffraction measurements on HgTe‐CdTe superlattices grown by molecular beam epitaxy have been made to determine the extent of intermixing of the individual HgTe and CdTe layers. In situ interdiffusion measurements were carried out at 110, 162, and 185 °C and estimates of the interdiffusion coefficient were made. We find appreciable intermixing of the HgTe and CdTe layers at temperatures as low as 110 °C. Such results have serious implications for the use of this material in optoelectronic devices.
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68.35.Fx Diffusion; interface formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
66.30.Ny Chemical interdiffusion; diffusion barriers
85.60.-q Optoelectronic devices

Morphological degradation of TiSi2 on 〈100〉 silicon

P. Revesz, L. R. Zheng, L. S. Hung, and J. W. Mayer

Appl. Phys. Lett. 48, 1591 (1986); http://dx.doi.org/10.1063/1.96826 (3 pages) | Cited 38 times

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Evidence of instability of TiSi2 layers during high‐temperature high vacuum annealing has been observed. Rutherford backscattering and scanning electron microscopy measurements showed that at high vacuum annealing conditions, the laterally homogeneous silicide layer breaks up into islands. In between these TiSi2 islands, growth of an epitaxial silicon layer was observed.
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68.60.Dv Thermal stability; thermal effects
68.55.-a Thin film structure and morphology
81.15.Np Solid phase epitaxy; growth from solid phases
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

High‐quality pyrographite films

Mutsuaki Murakami, Kazuhiro Watanabe, and Susumu Yoshimura

Appl. Phys. Lett. 48, 1594 (1986); http://dx.doi.org/10.1063/1.96827 (3 pages) | Cited 23 times

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High‐temperature heat treatment of a heat‐resistant, condensation polymer poly ( ρ‐phenylene‐1,3,4‐oxadiazole) yielded a large‐area, flexible film composed of highly oriented and nearly ideal graphite crystallites. The graphitic behavior was exemplified by both the (002) lattice spacing of 3.354 Å and extremely small full width at half‐maximum intensity of the (002) reflection, 0.16–0.17°, for the films heat treated above 2800 °C.
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81.20.-n Methods of materials synthesis and materials processing
81.40.Gh Other heat and thermomechanical treatments
61.66.Bi Elemental solids
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Role of tip structure in scanning tunneling microscopy

Y. Kuk and P. J. Silverman

Appl. Phys. Lett. 48, 1597 (1986); http://dx.doi.org/10.1063/1.96828 (3 pages) | Cited 84 times

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An ultrahigh vacuum scanning tunneling microscope (STM) equipped with a field ion microscope (FIM) has been built. By using the FIM image, a tungsten tip was tailored for high STM resolution in a scan of the Au(001) surface. The measured corrugation depth of the (1×5) rows was found to be a function of the size of the atomic cluster on the first plane of the tungsten tip.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
79.70.+q Field emission, ionization, evaporation, and desorption
68.35.B- Structure of clean surfaces (and surface reconstruction)
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Material reaction and silicide formation at the refractory metal/silicon interface

G. W. Rubloff, R. M. Tromp, and E. J. van Loenen

Appl. Phys. Lett. 48, 1600 (1986); http://dx.doi.org/10.1063/1.96829 (3 pages) | Cited 28 times

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Medium energy ion scattering studies show that material reactions other than interfacial silicide formation dominate the low‐temperature reactivity of the Ti/Si interface. This provides an explanation for the anomalous kinetics and considerable extent (100 Å or more) of reaction of refractory metals with Si, which are observed well below the temperatures normally associated with silicide growth in thicker films.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Ordered structures in GaAs0.5Sb0.5 alloys grown by organometallic vapor phase epitaxy

H. R. Jen, M. J. Cherng, and G. B. Stringfellow

Appl. Phys. Lett. 48, 1603 (1986); http://dx.doi.org/10.1063/1.96830 (3 pages) | Cited 134 times

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Electron diffraction measurements on (100) GaAs1−xSbx layers with x≊0.5 grown by organometallic vapor phase epitaxy indicate that ordered phases are formed during growth. Two ordered phases are observed. The simple, tetragonal AuCu‐I type phase consists of alternating {100} oriented GaAs and GaSb layers. Only the two variants with the tetragonal c axes perpendicular to the growth direction are observed. At least two variants are observed for the chalcopyrite E11 structure with alternating {210} oriented GaAs and GaSb layers.
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68.55.Nq Composition and phase identification
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Derivative photocurrent spectrum of an InGaAs/GaAs strained‐layer superlattice

I. J. Fritz, B. L. Doyle, T. J. Drummond, R. M. Biefeld, and G. C. Osbourn

Appl. Phys. Lett. 48, 1606 (1986); http://dx.doi.org/10.1063/1.96831 (3 pages) | Cited 17 times

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We report the use of wavelength‐modulated photocurrent spectroscopy to obtain detailed information on quantum well transitions in an In0.14Ga0.86As/GaAs strained‐layer superlattice. The spectra are interpreted in terms of a Kronig–Penney model with literature values for offsets and deformation potentials. The effect of the test structure’s built‐in electric field must be included to obtain agreement with this theory.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.40.+w Photoconduction and photovoltaic effects
72.80.Ey III-V and II-VI semiconductors
78.40.Dw Liquids

‘‘Ballistic’’ injection devices in semiconductors

A. F. J. Levi, J. R. Hayes, and R. Bhat

Appl. Phys. Lett. 48, 1609 (1986); http://dx.doi.org/10.1063/1.96832 (3 pages) | Cited 24 times

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‘‘Ballistic’’ electron transistors are of considerable interest for high‐frequency operation. Regardless of the mechanism of electron injection or collection it is anticipated that device performance will be dominated by base transit dynamics. We address this issue by calculating the scattering rate for hot electrons in selected semiconductor materials holding some common band structure and transport properties. It is shown that the scattering rate is critically dependent on the carrier concentration and that GaAs is not suitable for fabrication of traditional ‘‘ballistic’’ electron transistors. We suggest that semiconductors with small effective electron mass or a two‐dimensional system would be more suitable.
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72.20.Dp General theory, scattering mechanisms
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.30.De Semiconductor-device characterization, design, and modeling

Observation of alternating reconstructions of silicon (001) 2×1 and 1×2 using reflection high‐energy electron diffraction during molecular beam epitaxy

T. Sakamoto, T. Kawamura, and G. Hashiguchi

Appl. Phys. Lett. 48, 1612 (1986); http://dx.doi.org/10.1063/1.96833 (3 pages) | Cited 21 times

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Layer‐by‐layer alternating surface reconstructions of Si(001) 2×1 and 1×2 have been observed for the first time using reflection high‐energy electron diffraction (RHEED) during molecular beam epitaxy. RHEED intensity oscillations of the specular beam and two kinds of reconstruction related spots have been monitored simultaneously. It was found that stable alternating reconstructions can be observed on the surface with a single‐domain 2×1 structure obtained by high‐temperature annealing. One period of the RHEED intensity oscillation observed for the specular beam during the growth corresponds to a monatomic layer or a biatomic layer height depending not only on the electron beam incident azimuth but also the glancing angle.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxy

Takafumi Yao, Toshihiko Takeda, and Ryuji Watanuki

Appl. Phys. Lett. 48, 1615 (1986); http://dx.doi.org/10.1063/1.96834 (2 pages) | Cited 21 times

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Atomic layer epitaxy has been employed to produce good‐quality ZnSe single crystalline films onto (100) oriented GaAs substrates. The epilayers grown at 280 °C exhibited smooth and featureless surface texture and excellent photoluminescence characteristics. They showed dominant excitonic emission lines and a very weak deep center emission band.
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78.40.Fy Semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)

AlGaAs heterojunction visible (700 nm) light‐emitting diodes on Si substrates fabricated by metalorganic chemical vapor deposition

A. Hashimoto, Y. Kawarada, T. Kamijoh, M. Akiyama, N. Watanabe, and M. Sakuta

Appl. Phys. Lett. 48, 1617 (1986); http://dx.doi.org/10.1063/1.96835 (3 pages) | Cited 13 times

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AlGaAs visible surface light‐emitting diodes (LED’s) on silicon substrates have been successfully fabricated by use of the metalorganic chemical vapor deposition technique. The emission spectrum of the LED peaked at 700 nm with a half‐width of 45 nm at the forward current of 100 mA at room temperature. The external efficiency was 0.3%.
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85.60.Jb Light-emitting devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Nonlinear high‐frequency response of GaAs metal‐semiconductor field‐effect transistors

J. H. Abeles, C. W. Tu, S. A. Schwarz, and T. M. Brennan

Appl. Phys. Lett. 48, 1620 (1986); http://dx.doi.org/10.1063/1.96836 (3 pages) | Cited 3 times

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Calculations show that phase nonlinearity in 1 μm gate length power GaAs metal‐semiconductor field‐effect transistors (MESFET’s) can be accounted for by the variation of gate‐channel capacitance with gate bias voltage. Buried‐layer GaAs MESFET’s having constant gate‐channel capacitance have been fabricated and their high‐frequency linearity measured. The devices display dramatic reductions of phase nonlinearity to 0.15°/W output power at 6 GHz for powers below saturation in 8 mm gate‐width devices confirming that nonlinear capacitance causes nonlinearity observed in conventional GaAs MESFET’s. Channel transit time, estimated at 3–6 ps, is not significant as a cause of nonlinearity and varies less than 100 fs with signal level.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Ht High-field and nonlinear effects
73.40.Ns Metal-nonmetal contacts

Capless rapid thermal annealing of GaAs using an enhanced overpressure proximity technique

C. A. Armiento and F. C. Prince

Appl. Phys. Lett. 48, 1623 (1986); http://dx.doi.org/10.1063/1.96837 (3 pages) | Cited 21 times

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A new approach for capless rapid thermal annealing of ion implanted III‐V semiconductors, the enhanced overpressure proximity (EOP) technique, has been developed and applied to GaAs implanted with Si+. The EOP method relies on the use of a Sn‐coated GaAs wafer to provide a localized arsenic overpressure around the ion implanted wafer during the annealing cycle. The arsenic overpressure resulting from this arrangement is greater than the overpressure obtained with the conventional proximity method, which utilizes an untreated GaAs wafer as an arsenic source. This new annealing technique has yielded higher electrical activation and electron mobilities in GaAs than the conventional proximity method as well as an increased latitude in annealing times and temperatures. The EOP approach can be easily extended for capless rapid thermal annealing of other III‐V compounds such as InP and InGaAs.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Rs Electrical and magnetic properties related to treatment conditions
61.72.U- Doping and impurity implantation
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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