APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

16 Jun 1986

Volume 48, Issue 24, pp. 1633-1693


Improved performance of the discharge pumped HgBr and HgCl lasers by adding SF6

M. Sugii and K. Sasaki

Appl. Phys. Lett. 48, 1633 (1986); http://dx.doi.org/10.1063/1.96838 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
The effects of adding electronegative SF6 to discharge pumped HgBr and HgCl lasers were compared with those without SF6. A 50% and 40% improvement of the output energies for HgBr and HgCl lasers was realized by adding SF6 to the optimized gas mixture.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Hc Glow; corona
52.80.Yr Discharges for spectral sources (including inductively coupled plasma)
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Monolithic two‐dimensional arrays of high‐power GaInAsP/InP surface‐emitting diode lasers

J. N. Walpole and Z. L. Liau

Appl. Phys. Lett. 48, 1636 (1986); http://dx.doi.org/10.1063/1.97025 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
Two‐dimensional arrays of 16 laser elements have been fabricated using the mass transport process. Good uniformity, low threshold current (typically 11–14 mA per element), and high total cw power (up to 0.27 W at 22 °C) were obtained.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Measurement of electrical characteristics and electron density in a fast discharge pumped XeCl excimer laser

J. E. Ford, J. Meyer, and H. Houtman

Appl. Phys. Lett. 48, 1639 (1986); http://dx.doi.org/10.1063/1.96839 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
A novel, fast, transverse electric discharge circuit is used to pump a 5‐atm XeCl∗ excimer laser. The measured discharge characteristics agree with values predicted from critically damped circuit equations. Interferometric measurements of the electron density, n, as function of time indicate a maximum ne =1.6×1015 cm−3 and suggest a constant electron drift velocity vd =1.3×106 cm/s.
Show PACS
52.80.Hc Glow; corona
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.55.-f Lasers
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Millimeter wave absorption and refraction in tungsten bronze ferroelectrics

Bradley Bobbs, Mehran Matloubian, Harold R. Fetterman, Ratnakar R. Neurgaonkar, and Warren K. Cory

Appl. Phys. Lett. 48, 1642 (1986); http://dx.doi.org/10.1063/1.96840 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Tungsten bronze ferroelectric crystals SrxBa1−x Nb2O6 and Ba2−xSrxK1−yNay Nb5O15 have been investigated for potential electro‐optic uses at millimeter wave carrier frequencies between 55 and 110 GHz. Indices of absorption and refraction at temperatures between 20 and 300 K were derived from measurements of transmittance spectra containing Fabry–Perot fringes produced by crystal surface reflections. The anisotropies observed in both indices at these frequencies are huge compared with those at optical frequencies. Absorption in both materials decreases markedly upon cooling, but only for incident waves polarized along the crystal polar axis.
Show PACS
78.70.Gq Microwave and radio-frequency interactions
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.80.-e Ferroelectricity and antiferroelectricity

Radiation effects on phase separation and viscosity in a B2O3‐PbO glass

Isabelle Biron and Alain Barbu

Appl. Phys. Lett. 48, 1645 (1986); http://dx.doi.org/10.1063/1.96841 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Taking into account the temperature rise under the electron beam, phase separation in a supersaturated B2O3‐PbO glass is shown to be enhanced by electron irradiation. Coagulation of PbO‐rich particles is observed during in situ electron microscopic experiments. This mechanism of coalescence is discussed. Using the Smoluchowski model of coagulation we show that the glass viscosity is drastically lowered: typically eight to nine orders of magnitude at 270 °C and only one order at 420 °C. This effect is shown to disappear almost instantaneously when irradiation is stopped.
Show PACS
61.80.Fe Electron and positron radiation effects
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
66.20.-d Viscosity of liquids; diffusive momentum transport

Hydrogenated amorphous silicon formation by flux control and hydrogen effects on the growth mechanism

H. Toyoda, H. Sugai, K. Kato, A. Yoshida, and T. Okuda

Appl. Phys. Lett. 48, 1648 (1986); http://dx.doi.org/10.1063/1.96842 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
The composition of particle flux to deposit hydrogenated amorphous silicon films in a glow discharge is controlled by a combined electrostatic‐magnetic deflection technique. As a result, the films are formed firstly without hydrogen ion flux, secondly by neutral flux only, and thirdly by all species fluxes. Comparison of these films reveals the significant role of hydrogen in the surface reactions. Hydrogen breaks the Si–Si bond, decreases the sticking probability of the Si atom, and replaces the SiH bond by a SiH2 bond to increase the hydrogen content of the films.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.Nq Composition and phase identification
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Surface solidification and impurity segregation in amorphous silicon

P. S. Peercy, J. M. Poate, Michael O. Thompson, and J. Y. Tsao

Appl. Phys. Lett. 48, 1651 (1986); http://dx.doi.org/10.1063/1.96843 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
Real‐time measurements of the melt and solidification dynamics during pulsed laser irradiation have permitted elucidation of the processes which lead to the formation of very thin (∼2 nm) buried impurity layers in amorphous silicon. These novel structures are found to result from interfacial segregation at two moving liquid silicon‐amorphous silicon interfaces—one propagating toward the surface and the other propagating from the surface inward. The velocities of these interfaces are found to be remarkably low, ranging from 1 to 8 m/s for melts of <20 ns duration.
Show PACS
68.35.Rh Phase transitions and critical phenomena
81.30.Fb Solidification
66.30.J- Diffusion of impurities
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Temperature dependence for the onset of plastic yield in undoped and indium‐doped GaAs

H. M. Hobgood, S. McGuigan, J. A. Spitznagel, and R. N. Thomas

Appl. Phys. Lett. 48, 1654 (1986); http://dx.doi.org/10.1063/1.96844 (2 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
The onset of plastic yield in undoped and highly indium‐doped GaAs, prepared by liquid encapsulated Czochralski (LEC) growth, has been determined by uniaxial compression tests over the temperature range 250–600 °C. No distinguishable difference in yield stress is observed between undoped and indium‐doped GaAs; however, LEC GaAs exhibits a modest increase in yield strength over undoped Bridgman‐grown material. The absence of a significant increase in the yield strength of indium‐doped over undoped LEC GaAs implies that the mechanism by which indium reduces the dislocation density in GaAs is significantly effective only at temperatures near the melting point.
Show PACS
62.20.F- Deformation and plasticity
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
81.40.Lm Deformation, plasticity, and creep

Titanium‐doped semi‐insulating InP grown by the liquid encapsulated Czochralski method

G. W. Iseler and Brian S. Ahern

Appl. Phys. Lett. 48, 1656 (1986); http://dx.doi.org/10.1063/1.96845 (2 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
Semi‐insulating crystals of InP with resistivities of 1–3×106 Ω cm have been grown by the liquid encapsulated Czochralski method from melts co‐doped with Ti, a deep donor located 0.62±0.02 eV below the conduction band, and either Zn, Cd, or Be. This technique should make it possible to obtain crystals with resistivities of 107–108 Ω cm, which would be of interest for integrated circuit applications if their thermal stability were found to exceed that of Fe‐doped semi‐insulating InP.
Show PACS
81.40.Rs Electrical and magnetic properties related to treatment conditions
78.40.Fy Semiconductors
72.80.Ey III-V and II-VI semiconductors
61.72.U- Doping and impurity implantation

Ambient and dopant effects on boron diffusion in oxides

C. Y. Wong and F. S. Lai

Appl. Phys. Lett. 48, 1658 (1986); http://dx.doi.org/10.1063/1.96846 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
Diffusion of boron from ion implanted polycrystalline silicon source through 12.5 nm oxides was measured as a function of annealing ambience and doping concentrations of phosphorus or arsenic in the polycrystalline silicon. For comparison, boron ion implanted into 500 nm oxides was also investigated. In both cases, annealing in forming gas (90% N2, 10% H2) increases the diffusion rate of boron over that in nitrogen and the rate increase is the result of a large increase in the pre‐exponential term. Diffusion of ion implanted boron in oxides is much slower than that from an ion implanted polycrystalline silicon source. The lowering of the rate is the result of the five orders of magnitude decrease in the pre‐exponential term, even though concurrently there is also a decrease in the activation energy. Co‐doping of polycrystalline silicon with either phosphorus or arsenic lowers the pre‐exponential term by approximately 10%. Therefore, we conclude that boron diffusion through oxides is entropy dominated.
Show PACS
66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.uf Ge and Si
68.35.Fx Diffusion; interface formation

Atomic structures at IrSi(IrGe)/Ir(001) interfaces

H. F. Liu, H. M. Liu, and T. T. Tsong

Appl. Phys. Lett. 48, 1661 (1986); http://dx.doi.org/10.1063/1.96847 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
The interface atomic structure of very thin IrSi(IrGe) films grown on the Ir(001) plane has been studied with the field ion microscope. Two distinctive types of structures have been observed. One shows the C(2×2) structure of the substrate. As the size of the layer is reduced by field evaporation, the surface relaxes into a rhombic structure resembling the (011) Ir layer of the IrSi(IrGe) crystal. The other shows a rectangular unit cell of a larger size, which is not yet successfully correlated to the structure of the IrSi(IrGe) crystal.
Show PACS
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Electron traps in dislocation‐free In‐alloyed liquid encapsulated Czochralski GaAs and their annealing properties

Y. Kitagawara, N. Noto, T. Takahashi, and T. Takenaka

Appl. Phys. Lett. 48, 1664 (1986); http://dx.doi.org/10.1063/1.96848 (2 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
Electron traps in dislocation‐free In‐alloyed liquid encapsulated Czochralski (LEC) GaAs have been studied by deep level transient capacitance spectroscopy. Five traps are observed with activation energies ranging from 0.26 to 0.79 eV below the conduction band. The energies are closely equal to the ones observed in undoped LEC GaAs. However, a notable difference between the In‐alloyed crystal and the undoped crystal exists in effects of annealing on the deep levels. For the In‐alloyed crystal, all levels except EL2(0.79 eV) are unstable under the annealing at 850 °C, while for the undoped crystal, levels EL5(0.41 eV) and EL2 remain stable.
Show PACS
78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Resonant tunneling transport at 300 K in GaAs‐AlGaAs quantum wells grown by metalorganic chemical vapor deposition

S. Ray, P. Ruden, V. Sokolov, R. Kolbas, T. Boonstra, and J. Williams

Appl. Phys. Lett. 48, 1666 (1986); http://dx.doi.org/10.1063/1.96849 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
Resonant tunneling transport was studied in GaAs‐AlGaAs single well, double barrier structures. Negative differential resistance at 77 and 300 K was observed in devices grown by metalorganic chemical vapor deposition. The observed peak to valley ratios were 6 to 1 and 1.48 to 1, respectively. The presence of GaAs spacer layers was found to have a distinct effect on the 300 K current versus voltage characteristics. Microwave oscillation at frequencies up to 3.0 GHz was observed at 300 K. A short discussion of the oscillation frequency limits of our structure is presented.
Show PACS
73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.60.Dp Adsorbed layers and thin films
79.70.+q Field emission, ionization, evaporation, and desorption

Low‐temperature metalorganic growth of CdTe and HgTe films using ditertiarybutyltelluride

W. E. Hoke and P. J. Lemonias

Appl. Phys. Lett. 48, 1669 (1986); http://dx.doi.org/10.1063/1.96850 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
Epitaxial films of CdTe and HgTe have been grown by metalorganic chemical vapor deposition using a new tellurium source, ditertiarybutyltelluride. This compound is demonstrated to be less stable than presently available organotellurium compounds which permits film growth at lower substrate temperatures. Specular CdTe and HgTe films have been grown at temperatures as low as 220 and 230 °C, respectively. Hall measurements performed on the HgTe films indicate good transport properties. The reduced stability of ditertiarybutyltelluride compared to other alkyl organotellurium compounds is consistent with relative stability results for branched hydrocarbon molecules.
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Fast and slow states at the interface of amorphous silicon and silicon nitride

R. A. Street and C. C. Tsai

Appl. Phys. Lett. 48, 1672 (1986); http://dx.doi.org/10.1063/1.96851 (3 pages) | Cited 22 times

Full Text: | Download PDF

Show Abstract
The effects of a graded composition layer at the amorphous silicon/nitride interface are studied using transient photoconductivity. The graded layer causes a large increase in the density of slow states (electrons trapped within the nitride), but does not influence the fast interface states. The kinetics of trapping and release are measured and a model of field assisted hopping and thermal excitation is proposed. The different origins of slow and fast states are also discussed.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Monolithic GaAs/AlGaAs diode laser/deflector devices for light emission normal to the surface

T. H. Windhorn and W. D. Goodhue

Appl. Phys. Lett. 48, 1675 (1986); http://dx.doi.org/10.1063/1.96802 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
Light emission normal to the surface of a GaAs/AlGaAs wafer has been obtained by fabricating edge‐emitting double‐heterostructure diode lasers with a monolithic 45° deflector adjacent to one of the laser facets. The deflector and adjacent facet were formed by ion beam assisted etching, while the other facet was cleaved. Diode laser/deflector devices with two etched laser facets could be used to fabricate monolithic two‐dimensional laser arrays.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Electrical transport of holes in GaAs/InGaAs/GaAs single strained quantum wells

I. J. Fritz, T. J. Drummond, G. C. Osbourn, J. E. Schirber, and E. D. Jones

Appl. Phys. Lett. 48, 1678 (1986); http://dx.doi.org/10.1063/1.96803 (3 pages) | Cited 27 times

Full Text: | Download PDF

Show Abstract
We report electrical transport data for holes in single strained quantum well structures of the type GaAs/InxGa1−xAs/GaAs with x≊0.2. With modulation doping, 4 K mobilities of ∼3×104 cm2/V s have been achieved. This value is near that attained for electrons in comparable structures, illustrating the enhanced transport possible due to the strain‐induced light‐hole planar mass.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.My Galvanomagnetic and other magnetotransport effects

Self‐limiting mechanism in the atomic layer epitaxy of GaAs

M. A. Tischler and S. M. Bedair

Appl. Phys. Lett. 48, 1681 (1986); http://dx.doi.org/10.1063/1.96804 (3 pages) | Cited 40 times

Full Text: | Download PDF

Show Abstract
A self‐limiting mechanism has been observed in the atomic layer epitaxy (ALE) of GaAs deposited by alternate exposure to AsH3 and trimethylgallium (TMG). The thickness of the deposited film was found to be independent of the mole fractions of both TMG and AsH3 in the gas phase. These results will allow the use of ALE to deposit III‐V compounds with growth rates which are insensitive to the input partial pressures of the reactive gases.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.55.-a Thin film structure and morphology

HgTe‐CdTe double barrier tunneling structures

J. N. Schulman and C. L. Anderson

Appl. Phys. Lett. 48, 1684 (1986); http://dx.doi.org/10.1063/1.96805 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
Double barrier heterostructures consisting of HgTe‐CdTe‐HgTe‐CdTe‐HgTe layers are proposed as providing improved negative differential resistance current‐voltage characteristics as compared with similar devices based on the GaAs‐GaAlAs system. The small HgTe‐CdTe valence‐band offset and the inverted light holelike conduction band of HgTe produce intrinsic interface states with long decay lengths in the CdTe barrier layers. This enhances the transmission coefficient and thus the tunneling current. Also, the small offset causes the CdTe barriers to present more blockage to unwanted thermal electron currents than do typical GaAlAs barriers. The high mobility of HgTe reduces the series resistance of the contacting layers, thus reducing the bias voltage required to achieve resonance and increasing the speed of the device. The effectiveness of the structure will depend on the value of the valence‐band offset and material quality.
Show PACS
73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Photoluminescence of undoped, N+‐implanted and C+‐implanted AlAs grown by molecular beam epitaxy

Yunosuke Makita, Kazuhiro Kudo, Toshio Momura, Yoshinori Takeuchi, Masaki Yokota, Yoshinobu Mitsuhashi, Toshihiko Kobayashi, Tomio Izumi, and Tokue Matsumori

Appl. Phys. Lett. 48, 1687 (1986); http://dx.doi.org/10.1063/1.96806 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Low‐temperature photoluminescence studies of undoped, N+ (nitrogen)‐implanted and C+ (carbon)‐implanted AlAs grown by molecular beam epitaxy are reported. It was experimentally demonstrated that a dominant emission temporarily denoted by A, observed at 13 meV below the indirect excitonic band gap, Eg,ind(X), is closely related with N isoelectronic impurity atoms. It was also found that the A emission accompanies many one‐phonon and two‐phonon replicas, among which the longitudinal optical phonon replica is predominant. Carbon atoms were determined not to be principal residual impurities in undoped AlAs. The two conspicuous C‐related emissions were revealed by the intentional incorporation of C atoms, which are situated at 60 and 64 meV below Eg,ind(X).
Show PACS
78.40.Fy Semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Studies of excimer laser ablation of solids using a Michelson interferometer

R. E. Walkup, J. M. Jasinski, and R. W. Dreyfus

Appl. Phys. Lett. 48, 1690 (1986); http://dx.doi.org/10.1063/1.96807 (3 pages) | Cited 53 times

Full Text: | Download PDF

Show Abstract
A Michelson interferometer has been used as a direct quantitative probe for gas phase plasma formation in the UV excimer laser ablation of solids. Excimer laser fluence thresholds for plasma formation are determined and correlated with optical emission from electronically excited ablation fragments.
Show PACS
79.20.Ds Laser-beam impact phenomena
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
51.70.+f Optical and dielectric properties
FREE

Erratum: Resonant tunneling of two‐dimensional electrons through a quantum wire: A negative transconductance device [Appl. Phys. Lett. 47, 1347 (1985)]

Serge Luryi and Federico Capasso

Appl. Phys. Lett. 48, 1693 (1986); http://dx.doi.org/10.1063/1.97043 (1 page) | Cited 7 times

Full Text: | Download PDF

Abstract Unavailable
Show PACS
73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
99.10.Cd Errata
FREE

Erratum: Preparation and electrical properties of InPxOy gate insulators on InP [Appl. Phys. Lett. 48, 375 (1986)]

H. L. Chang, L. G. Meiners, and C. J. Sa

Appl. Phys. Lett. 48, 1693 (1986); http://dx.doi.org/10.1063/1.97039 (1 page)

Full Text: | Download PDF

Abstract Unavailable
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
99.10.Cd Errata
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close