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23 Jun 1986

Volume 48, Issue 25, pp. 1701-1758


High power coupled CO2 waveguide laser array

L. A. Newman, R. A. Hart, J. T. Kennedy, A. J. Cantor, A. J. DeMaria, and W. B. Bridges

Appl. Phys. Lett. 48, 1701 (1986); http://dx.doi.org/10.1063/1.96808 (3 pages) | Cited 16 times

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A hollow‐bore ridge waveguide technique for phase locking arrays of coupled CO2 rf excited waveguide lasers was demonstrated. Stable phase‐locked operation of two‐ and three‐channel arrays has been demonstrated at the 50 W output level. Preliminary experiments with a five‐element array generated an output power of 95 W but phase‐locked operation was not conclusively demonstrated.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Micromachining of integrated optical structures

L. R. Harriott, R. E. Scotti, K. D. Cummings, and A. F. Ambrose

Appl. Phys. Lett. 48, 1704 (1986); http://dx.doi.org/10.1063/1.96809 (3 pages) | Cited 13 times

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Three‐dimensional features have been milled into optical materials by scanning a submicron focused gallium ion beam. Different shapes are obtained using computer controlled beam placement and dwell time during sputtering. We have used this technique to create micron‐sized facets and reflectors in the active areas of semiconductor lasers. Light output and quantum efficiency measurements indicate that these features are of sufficient quality to fabricate monolithic integrated optical devices. Some of the applications currently being investigated are laser‐detector pairs, coupled cavity lasers, lasers with integral lenses, distributed feedback lasers, confocal cavities, and laser cavity length tuning.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.-m Integrated optics

Propagation delays and transition times in pulse‐modulated semiconductor lasers

R. S. Tucker, J. M. Wiesenfeld, P. M. Downey, and J. E. Bowers

Appl. Phys. Lett. 48, 1707 (1986); http://dx.doi.org/10.1063/1.96810 (3 pages) | Cited 2 times

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An experimental and theoretical study of large‐signal switching transients in directly modulated semiconductor lasers shows that the main parameters affecting high‐speed switching are the small‐signal relaxation oscillation frequency and the optical on/off ratio of the pulses. Simple expressions agree well with measured data and can be used to obtain an estimate of the maximum achievable modulation bit rate.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Analytical solution for the lateral current distribution in multiple stripe laser diodes

Markus‐Christian Amann and Franz Kappeler

Appl. Phys. Lett. 48, 1710 (1986); http://dx.doi.org/10.1063/1.96811 (3 pages) | Cited 3 times

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The lateral profile of the injection current along the active layer in multiple stripe laser diodes is analyzed for the practical case of homogeneous current density within each individual stripe contact. By means of conformal mapping an exact analytical solution is found for arbitrary contact configurations (number, width, and location) driven with different currents. The simple form of the solution eases the analysis of modal gain and supermode discrimination in gain‐guided and index‐guided arrays of stripe‐geometry laser diodes.
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42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
85.30.De Semiconductor-device characterization, design, and modeling

Low threshold, optically pumped, room‐temperature laser oscillation at 0.88 μm from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Ge‐coated Si substrates

J. P. van der Ziel, R. D. Dupuis, and J. C. Bean

Appl. Phys. Lett. 48, 1713 (1986); http://dx.doi.org/10.1063/1.96812 (3 pages) | Cited 18 times

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Low threshold, optically pumped laser oscillation has been obtained using AlGaAs/GaAs double heterostructures grown on Ge‐coated Si substrates. The optical pump power for threshold is comparable to similar heterostructures grown on GaAs substrates. Between 20 and 85 °C the threshold temperature dependence is exponential with T0=160 °C. The laser wavelength and the peak of the spontaneous emission of lasers grown on Si substrates are shifted to longer wavelengths relative to bulk GaAs. This results largely from the strain in the plane of the epilayer produced by the difference in the thermal contraction of the layers and the Si substrate on cooling from the growth temperature.
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42.55.Px Semiconductor lasers; laser diodes
42.55.-f Lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Properties of AlGaAs buried heterostructure lasers and laser arrays grown by a two‐step metalorganic chemical vapor deposition

D. F. Welch, P. S. Cross, D. R. Scifres, W. Streifer, and R. D. Burnham

Appl. Phys. Lett. 48, 1716 (1986); http://dx.doi.org/10.1063/1.97024 (3 pages) | Cited 3 times

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High quality buried heterostructure (BH) lasers were grown by a two‐step metalorganic chemical vapor deposition. Single stripe BH lasers exhibited thresholds of 20 mA for a 1.2‐μm stripe. The spectral output emits in a single transverse and longitudinal mode up to 15 mW, with a side lobe suppression greater than 23 dB at 5 mW output. BH laser arrays were fabricated with threshold currents of 130 mA and differential efficiencies of 70% for a 10‐stripe array.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Analysis of the far‐field output angle scanning by injection locking of a diode laser array

Jean‐Pierre Weber and Shyh Wang

Appl. Phys. Lett. 48, 1719 (1986); http://dx.doi.org/10.1063/1.96813 (3 pages) | Cited 1 time

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We present a linear theory to explain the experimentally observed emission angle scanning of an injection‐locked diode laser array when the frequency of the injected light is changed. This theory is based on eigenmode analysis of the coupled waveguides and on the use of the antenna array theory for the far‐field pattern. The experimental results are explained in terms of the resonant excitation of eigenmodes, which selects the far‐field pattern associated with the resonant mode. The agreement with published results is good.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Observations of subpicosecond dynamics in GaAlAs laser diodes

Michael S. Stix, Morris P. Kesler, and Erich P. Ippen

Appl. Phys. Lett. 48, 1722 (1986); http://dx.doi.org/10.1063/1.96814 (3 pages) | Cited 37 times

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We present results of pump‐probe experiments on GaAlAs laser diodes indicating a 0.9‐ps relaxation time associated with the device transmission. Subpicosecond, tunable near infrared pulses obtained by fiber compression were used to carry out the experiments. The data strongly support a model in which a nonequilibrium carrier temperature in the active layer is responsible for the observed signal.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.-f Lasers
42.60.Fc Modulation, tuning, and mode locking

InGaAsP closely spaced dual wavelength laser

N. K. Dutta, T. Cella, J. L. Zilko, D. A. Ackerman, A. B. Piccirilli, and L. I. Greene

Appl. Phys. Lett. 48, 1725 (1986); http://dx.doi.org/10.1063/1.96815 (2 pages) | Cited 5 times

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The fabrication and performance characteristics of an independently controllable closely spaced dual wavelength laser structure are described. The laser structure utilizes semi‐insulating (Fe‐doped InP) layers both for confinement of the current to the active regions and for separation of the active regions of the two lasers. Both lasers emit in single frequencies near 1.55 μm by virtue of frequency selective feedback provided by a second order grating. The light coupled into a single mode fiber from both lasers is about 5 dB smaller than that for optimum coupling arrangement of each laser. Dual wavelength laser structures of this type are useful for wavelength multiplexed optical transmission systems.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.81.Qb Fiber waveguides, couplers, and arrays

Determination of electric field and electron temperature in the positive column of a high‐power hydrogen thyratron from nonintrusive measurements

D. A. Erwin, J. A. Kunc, and M. A. Gundersen

Appl. Phys. Lett. 48, 1727 (1986); http://dx.doi.org/10.1063/1.96816 (3 pages) | Cited 5 times

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This work presents a simple method for calculating the conductivity, electron temperature, and electric field in a high‐current hydrogen thyratron positive column as functions of the current density and electron density. The method is based on an analysis that takes into account the partially ionized nature of the plasma, and includes the effects of electron‐electron and electron‐ion collisions. Data are presented for a typical thyratron discharge (hydrogen pressure 0.4 Torr, current density 50–250 A/cm2, electron density 2–8×1014 cm−3). The electron temperature is found to be close to 1 eV, while the electric field ranges between 5 and 15 V/cm.
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52.80.-s Electric discharges
52.80.Tn Other gas discharges
52.75.Kq Plasma switches (e.g., spark gaps)
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

High brightness red electroluminescence in CaS:Eu thin films

K. Tanaka, A. Mikami, T. Ogura, K. Taniguchi, M. Yoshida, and S. Nakajima

Appl. Phys. Lett. 48, 1730 (1986); http://dx.doi.org/10.1063/1.96817 (3 pages) | Cited 22 times

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The crystallinity and luminescent property were studied on evaporated CaS:Eu thin films. The orientation of the film strongly depends on substrate temperature. Distinct orientation was not observed in films deposited below 600 °C. Above 600 °C, the films tend to have a (111) orientation. The red emitting electroluminescent device with CaS:Eu active layer prepared at 680 °C which is strongly oriented to the [111] direction shows the brightness of 180 cd/m2 under 1 kHz alternate excitation.
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78.60.Fi Electroluminescence
75.20.Ck Nonmetals
68.55.-a Thin film structure and morphology

Indium doping of HgCdTe layers during growth by molecular beam epitaxy

M. Boukerche, J. Reno, I. K. Sou, C. Hsu, and J. P. Faurie

Appl. Phys. Lett. 48, 1733 (1986); http://dx.doi.org/10.1063/1.96818 (3 pages) | Cited 16 times

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Successful n‐type doping of HgCdTe layers with indium during growth by molecular beam epitaxy is reported for the first time. The indium concentration is found to increase with the In flux. The doping level reaches around 1018 cm−3, which is nearly two orders of magnitude more than what can be achieved by stoichiometry deviation in as‐grown samples. In the range studied, the electrical efficiency is substantial and decreases with increasing In atomic concentration. The experimental measurements are in agreement with a model suggesting that indium, which is not singly ionized, precipitates as In2Te3 and that the native acceptor defect concentration remains approximately constant. n‐type doping is shown to be possible for a wide range of alloy concentrations. Good electron mobilities in the alloy are presented for the doping concentrations studied. This technique will greatly enhance the potential of molecular beam epitaxy for device applications of this material.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.40.Fy Semiconductors

New experimental method for extracting the density and generation annealing rates of interface and oxide traps

Chih‐Tang Sah, Wallace Wan‐Li Lin, Charles Ching‐Hsiang Hsu, and Samuel Cheng‐Sheng Pan

Appl. Phys. Lett. 48, 1736 (1986); http://dx.doi.org/10.1063/1.96819 (3 pages) | Cited 6 times

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A new method is proposed which gives the initial and final steady‐state densities and the generation‐annealing kinetic rates of each interface state and oxide trap species. The number of stress‐anneal cycles required to give deterministic values of the rates is equal to the number of interface or oxide traps. An implementation example is given on the post‐irradiation room‐temperature annealing of the two interface and two oxide traps in a silicon metal‐oxide‐semiconductor capacitor. Accurate relative hydrogen concentration can also be determined at atomic hydrogen densities as low as 106 atoms/cm3.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.80.Fe Electron and positron radiation effects
73.20.-r Electron states at surfaces and interfaces
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Formation of chalcogenide glass p‐n junctions

Noboru Tohge, Kimio Kanda, and Tsutomu Minami

Appl. Phys. Lett. 48, 1739 (1986); http://dx.doi.org/10.1063/1.96820 (3 pages) | Cited 12 times

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Rectifying p‐n junctions have been formed between n‐type Ge20Bi11Se69 bulk glass and p‐type chalcogenide films such as Ge20Se80 and As2Se3. The forward current in the power law increased with increasing bias voltage, suggesting that it was space charge limited. The spectral response of the short circuit currents showed a maximum and a shoulder at photon energies which corresponded to the optical band gaps of the p‐type films and the n‐type glass, respectively. This finding is indicative of the bending of the energy bands in both the p‐type films and the n‐type glass in the vicinity of the p‐type film/n‐type glass interface.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals
73.40.Ei Rectification

Activation mechanism for Si implanted into semi‐insulating GaAs

Fumiaki Hyuga, Kazuo Watanabe, Jiro Osaka, and Keigo Hoshikawa

Appl. Phys. Lett. 48, 1742 (1986); http://dx.doi.org/10.1063/1.96821 (3 pages) | Cited 17 times

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Hall effect and photoluminescence are measured for Si‐implanted and SiO2‐capped annealed GaAs, and for S‐implanted and SiN‐capped annealed GaAs. These experimental data are compared with those for Si‐implanted and SiN‐capped annealed GaAs. No remarkable change in sheet carrier concentration (Ns) is observed around dislocations and the SiAs photoluminescence peak is absent in the SiO2‐capped annealed layer. Dislocations decrease Ns in the S‐implanted layer. These results indicate that the activation efficiency of Si implanted into GaAs is determined by SiAs acceptor concentration.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.40.Fy Semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Concentration ratio dependence of selective optical compensation effect in dually Zn+ and Se+ ion‐implanted GaAs

Toshio Nomura, Yunosuke Makita, Katsuhiro Irie, Nobukazu Ohnishi, Kazuhiro Kudo, Hideki Tanaka, and Yoshinobu Mitsuhashi

Appl. Phys. Lett. 48, 1745 (1986); http://dx.doi.org/10.1063/1.96822 (3 pages) | Cited 18 times

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The selective optical compensation effect in which exclusively acceptor‐associated emissions g and [g‐g] are selectively quenched by the simultaneous presence of acceptor and donor atoms, was investigated in dually Zn+ (acceptor)‐implanted and Se+(donor)‐implanted GaAs as a function of Se to Zn concentration ratio, [Se]/[Zn], at a fixed Zn concentration of 1×1017 cm−3. It was revealed for the first time that Se atoms with one‐tenth of the concentration of Zn have the ability to significantly suppress the [g‐g] emission. However, the g emission is not significantly suppressed by the presence of even an equal concentration of Se atoms.
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78.40.Fy Semiconductors
75.20.Ck Nonmetals
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Metal deposition by electron beam exposure of an organometallic film

H. G. Craighead and L. M. Schiavone

Appl. Phys. Lett. 48, 1748 (1986); http://dx.doi.org/10.1063/1.96823 (3 pages) | Cited 16 times

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We describe a method of metal deposition by electron beam exposure and pyrolysis of a gold containing organometallic polymer. Commercial gold containing solutions were used as negative electron beam resists with line dose sensitivities of about 0.2 μC/cm as developed in methylene chloride. We have demonstrated the formation of metal patterns on Si, GaAs, and polyimide with linewidths as small as 0.25 μm.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.-b Surface treatments
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Electron beam stimulated nonthermal crystallization of CdS surface layers: Observations by real‐time atomic‐resolution electron microscopy

Daniel J. Ehrlich and David J. Smith

Appl. Phys. Lett. 48, 1751 (1986); http://dx.doi.org/10.1063/1.96824 (3 pages) | Cited 11 times

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The transformations of partially amorphous CdS surfaces induced by 100–400 keV electrons have been followed in real time by atomic‐resolution electron microscopy. A definite sequence of atomic rearrangements leading to nucleation and growth of CdS and Cd crystals was observed. These processes are believed to be due to nonthermal mechanisms involving inelastic electron collisions rather than direct knock‐on collisions between electrons and the atomic nuclei since there is no threshold over the range of incident electron energies. These effects may be responsible for the degradation of electron beam pumped CdS lasers which has been reported elsewhere.
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68.35.Rh Phase transitions and critical phenomena
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.80.Fe Electron and positron radiation effects
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Optical properties of β‐ZnP2 via photoelectrochemistry

M. A. Ryan and B. A. Parkinson

Appl. Phys. Lett. 48, 1754 (1986); http://dx.doi.org/10.1063/1.96825 (2 pages) | Cited 1 time

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Photocurrent spectroscopy is used to measure the polarization dependence of optical transitions in β‐ZnP2 and to identify an impurity state. A large polarization dependence was measured in the photocurrent spectrum with the light polarized parallel or perpendicular to the c axis of a β‐ZnP2 crystal. Structure observed in the spectra was attributed to polaritons and, in the n‐type samples, to an impurity level associated with tin.
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78.40.Fy Semiconductors
73.40.Mr Semiconductor-electrolyte contacts
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Growth of single crystal bcc α‐Fe on ZnSe via molecular beam epitaxy

G. A. Prinz, B. T. Jonker, J. J. Krebs, J. M. Ferrari, and F. Kovanic

Appl. Phys. Lett. 48, 1756 (1986); http://dx.doi.org/10.1063/1.96778 (3 pages) | Cited 38 times

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Molecular beam epitaxy methods have been used to grow high quality single crystal films of bcc α‐Fe on fcc (zinc blende) ZnSe (001) epilayers on GaAs (001). These films were characterized by reflection high‐energy electron diffraction, Auger electron spectroscopy, ferromagnetic resonance (FMR), and vibrating sample magnetometry. The FMR linewidth and measured coercive field are significantly smaller than previously reported for single crystal Fe films.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.50.Bb Fe and its alloys
68.55.-a Thin film structure and morphology
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