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13 Jan 1986

Volume 48, Issue 2, pp. 83-198

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Generation and detection of 15‐ps light pulses in the 1.2–1.3‐μm wavelength range by semiconductor lasers and detectors

D. Bimberg, E. H. Böttcher, K. Ketterer, H. P. Vollmer, H. Beneking, and P. Roentgen

Appl. Phys. Lett. 48, 83 (1986); http://dx.doi.org/10.1063/1.96942 (3 pages) | Cited 5 times

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The generation of 15‐ps light pulses at 1.23 and 1.26 μm having 200 mW peak power at a repetition rate of up to 10 MHz from directly modulated unbiased V‐groove InxGa1−xAsyP1−y lasers is reported. Specially designed avalanche generators are employed for modulation of the laser injection current. The light pulses are analyzed using microstructured Ge photodetectors having a response of 62 ps at full width half‐maximum. A deconvolution technique based on a theoretical analysis of the complete circuit of the detection system is applied to reduce the large error occurring normally when the characteristics of fast pulses are determined from the response of much slower detectors. This technique is proved by independent experiments to hold. A spontaneous lifetime of 1.5 ns of the charge carriers in the active layer of the laser is determined from the measured delay times between the optical and electrical pulses.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
07.05.Hd Data acquisition: hardware and software
07.05.Kf Data analysis: algorithms and implementation; data management
07.05.Rm Data presentation and visualization: algorithms and implementation
85.60.Gz Photodetectors (including infrared and CCD detectors)

cw helium‐neon Raman laser

J. Assendrup, B. Grover, L. Hall, and S. Jabr

Appl. Phys. Lett. 48, 86 (1986); http://dx.doi.org/10.1063/1.96943 (3 pages) | Cited 2 times

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Continuous lasing has been observed at 650 nm with a helium‐neon electrical discharge placed in an ultrahigh finesse optical cavity. This new lasing line is attributed to a Stokes–Raman process between the 1s5 and 1s4 electronic states of neon atoms pumped by the 632.8‐nm neon lasing line. A gain calculation based on a near‐resonant stimulated electronic Raman process predicts a lasing threshold for the 650‐nm line near that measured. Lasing output power was measured as a function of discharge current and helium‐neon gas pressure for the pump line and for the Stokes line.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Room‐temperature continuous‐wave operation of an AlGaInP mesa stripe laser

Masao Ikeda, Kazushi Nakano, Yoshifumi Mori, Kunio Kaneko, and Naozo Watanabe

Appl. Phys. Lett. 48, 89 (1986); http://dx.doi.org/10.1063/1.96944 (3 pages) | Cited 18 times

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Continuous‐wave (cw) operation at temperature up to 33 °C of an AlGaInP/GaInP mesa stripe laser has been achieved for the first time. The threshold current was 106 mA at 30 °C for a device with a mesa stripe 6 μm wide and 250 μm long. The emission wavelength was 678 nm under cw operation at 20 °C. The wafer, which was grown by atmospheric pressure metalorganic chemical vapor deposition, had a dually stacked cladding structure in addition to a conventional double heterostructure. The mesa structure was formed by selective chemical etching of GaAs/AlGaAs over layers. The effect of the mesa structure on threshold current density, thermal resistance, and other characteristics was examined.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission

Greatly reduced losses for small‐radius bends in Ti:LiNbO3 waveguides

S. K. Korotky, E. A. J. Marcatili, J. J. Veselka, and R. H. Bosworth

Appl. Phys. Lett. 48, 92 (1986); http://dx.doi.org/10.1063/1.96945 (3 pages) | Cited 11 times

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We report the demonstration of a new concept that permits the fabrication of low‐loss Ti:LiNbO3 waveguide bends with radii much smaller than previously achieved.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

New efficient phosphor material ZnS:Sm,P for red electroluminescent devices

T. Tohda, Y. Fujita, T. Matsuoka, and A. Abe

Appl. Phys. Lett. 48, 95 (1986); http://dx.doi.org/10.1063/1.96946 (2 pages) | Cited 12 times

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Thin‐film electroluminescent devices employing a new phosphor material ZnS:Sm,P have been found to exhibit bright red emission. Luminous efficiency of ZnS:Sm,P phosphor films is higher than that of ZnS:Sm phosphor films in the range of annealing temperature above 500 °C. A brightness of 1000 cd/m2 and an efficiency of 8×10−2 lm/W have been obtained in the devices with ZnS:Sm(1 at. %),P(0.5 at. %) phosphor films annealed at 600 °C. These results indicate that P is an efficient co‐activator for Sm in ZnS.
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78.60.Fi Electroluminescence
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.
85.60.Jb Light-emitting devices
75.20.Ck Nonmetals

Acceleration sensitivity of surface acoustic wave resonators

H. F. Tiersten, D. S. Stevens, and R. D. Weglein

Appl. Phys. Lett. 48, 97 (1986); http://dx.doi.org/10.1063/1.96947 (3 pages)

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The acceleration sensitivity of acoustic surface wave resonators (and delay lines) on quartz substrates supported uniformly at the base has been calculated. For normal acceleration the calculated sensitivity is almost two orders of magnitude lower than the lowest published measurements. For in‐plane acceleration the calculated sensitivity is comparable to the best published measurements. This causes us to believe that uniform base support has not been realized in practice and, in fact, may be impossible to achieve. For normal acceleration and nonuniform base support the calculations indicate that increasing the thickness of the substrate decreases the acceleration sensitivity. Experimental verification of this is presented. However, for in‐plane acceleration the calculations indicate that increasing the thickness of the substrate increases the acceleration sensitivity.
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43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators

Studies of laser‐generated ultrasonic waveforms at different orientations

C. B. Scruby

Appl. Phys. Lett. 48, 100 (1986); http://dx.doi.org/10.1063/1.96965 (3 pages) | Cited 5 times

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The ultrasonic waveforms generated by a pulsed laser incident at two positions on a steel plate are studied as a function of laser energy. At the 45° position there is a steady increase in compression wave amplitude with energy when passing from thermoelastic to ablation regimes, in contrast to the epicenter where there is a large increase in amplitude and change of pulse shape. It is concluded that the thermoelastic and ablation sources are comparable in generation efficiency per unit laser energy, except close to the epicenter, and that the chief effect of raising the power density is to vary the angular distribution of ultrasonic energy.
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62.65.+k Acoustical properties of solids
65.40.De Thermal expansion; thermomechanical effects
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect

Temperature and x‐ray intensity scaling in KrF laser plasma interaction

P. D. Gupta, R. Popil, R. Fedosejevs, A. A. Offenberger, D. Salzmann, and C. E. Capjack

Appl. Phys. Lett. 48, 103 (1986); http://dx.doi.org/10.1063/1.96966 (3 pages) | Cited 15 times

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Experimental measurements are presented of space and time integrated x‐ray emission from aluminum plasma produced by 2 ns (full width at half‐maximum), 268 nm Raman compressed KrF laser pulses. A single temperature spectrum was measured giving temperatures of 75–440 eV over the range of intensities 9×1011–2×1013 W/cm2. This scaling agrees well with a simple self‐regulating model. Conversion of laser energy into x rays above 1 keV energy was found to scale as I2.37L reaching 0.35% at 3.5×1013 W/cm2.
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52.38.-r Laser-plasma interactions
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Optical studies of hydrogenated amorphous carbon plasma deposition

J. Wagner, Ch. Wild, F. Pohl, and P. Koidl

Appl. Phys. Lett. 48, 106 (1986); http://dx.doi.org/10.1063/1.96967 (3 pages) | Cited 31 times

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Optical emission spectroscopy was applied to study the rf glow discharge in hydrocarbons used for the deposition of amorphous hydrogenated carbon (a‐C:H). The optical data in conjunction with mass spectrometric measurements show that the species found in the glow region are very specific for the hydrocarbon used (e.g., benzene), but they are not directly related to the structure of the a‐C:H film deposited. In the vicinity of the negatively self‐biased cathode strong emission from CH is observed, irrespective of which hydrocarbon is used. The excited CH radicals are shown to result from fragmentation of the impacting hydrocarbon molecules. We conclude that this fragmentation upon impact is the key mechanism for the formation of hard a‐C:H, irrespective of the type of hydrocarbon used for the deposition.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
52.80.Pi High-frequency and RF discharges
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Polydimethylsiloxane flow defined for experiments in fluid dynamics

Ruud Weijermars

Appl. Phys. Lett. 48, 109 (1986); http://dx.doi.org/10.1063/1.97008 (3 pages) | Cited 16 times

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Linear polydimethylsiloxanes (PDMS’s) are liquid polymers between 200 and 550 K and are well suited for experimental studies in fluid mechanics because (1) they are commercially available in a wide range of molecular lengths, (2) they are transparent and colorless, and (3) their flow behavior can be predicted from their molecular length. A particular PDMS can flow either as a viscous or strain rate softening fluid, depending upon its molecular length and the applied strain rate. Six different flow regimes are defined here to aid the selection of the appropriate PDMS for any particular experiment in fluid dynamics. Diffusion is sufficiently slow in PDMS’s of long molecular length so that finite strains can be visualized by the deformation of strain markers within it. This allows laboratory modeling of three‐dimensional strain histories in fluids which previously could only be approached by two‐dimensional numerical modeling.
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47.15.-x Laminar flows
47.80.-v Instrumentation and measurement methods in fluid dynamics

Tunneling microscopy of graphite in air

Sang‐Il Park and C. F. Quate

Appl. Phys. Lett. 48, 112 (1986); http://dx.doi.org/10.1063/1.96968 (3 pages) | Cited 137 times

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Images of graphite have been recorded with a scanning tunneling microscope operating in air at ambient pressure. The results, which are in agreement with theory and previous experiments in vacuum, confirm that with a surface such as graphite the tunneling microscopy in air can be used to examine the geometry of the surface with a resolution that is less than 2 Å.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
68.35.B- Structure of clean surfaces (and surface reconstruction)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Growth law for disk precipitates, and oxygen precipitation in silicon

S. M. Hu

Appl. Phys. Lett. 48, 115 (1986); http://dx.doi.org/10.1063/1.96969 (3 pages) | Cited 23 times

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It is shown that the energetically optimum shape of a precipitate which generates strains in the host lattice is a disc with a thickness that increases approximately with the square root of the size (disc radius). This relationship contravenes the two common assumptions that either the thickness or the aspect ratio stays unchanged during precipitate growth. From this relationship is derived a precipitate growth law of r∝t2/3. The results of the analysis are discussed with special reference to the growth of oxygen precipitates in silicon. The change in the morphology of oxygen precipitates with temperatures is also discussed.
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81.30.Mh Solid-phase precipitation
61.72.Nn Stacking faults and other planar or extended defects
66.30.J- Diffusion of impurities
68.35.Md Surface thermodynamics, surface energies

Zone refining and enhancement of solid phase epitaxial growth rates in Au‐implanted amorphous Si

D. C. Jacobson, J. M. Poate, and G. L. Olson

Appl. Phys. Lett. 48, 118 (1986); http://dx.doi.org/10.1063/1.96970 (3 pages) | Cited 36 times

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Epitaxial crystallization of Au‐implanted amorphous Si layers has been studied over the temperature range 515–735 °C. During crystallization, Au is zone refined into the remaining amorphous layer, resulting in an Au concentration that increases as the layer becomes thinner. The rate of solid phase epitaxy increases rapidly with Au concentration over the range from 0.15 to approximately 0.50 at. %. At higher concentrations the rate enhancement diminishes and above 0.70 at. % severe retardation of epitaxy is observed to occur.
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81.15.Np Solid phase epitaxy; growth from solid phases
66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Fx Diffusion; interface formation

Ring‐shaped domain effective for the Bloch line memory

Yasuharu Hidaka

Appl. Phys. Lett. 48, 121 (1986); http://dx.doi.org/10.1063/1.97030 (3 pages)

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A technique for stabilizing the ring‐shaped stripe domain has been developed for improving the Bloch line memory. Selective grooving in the magnetic film provides for both formation and stabilization of the ring domain. The inside wall of the ring domain is used for ring domain stabilization, through its grooved edge affinity. The outside wall of the domain is stabilized away from the grooved edge by the natural domain width. The following features are found. (1) The ring‐shaped domain is stable over a wide bias field range. (2) The demagnetizing field gradient, normal to the wall plane, can be kept almost the same at each position along the outside wall. (3) A stripe domain head can be formed controllably from a part of the ring‐shaped domain, as required in the Bloch line memory for stripe‐to‐bubble domain conversion.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.30.Gw Magnetic anisotropy
85.70.Ge Ferrite and garnet devices
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

Amorphization of transition metal Zr alloys by mechanical alloying

E. Hellstern and L. Schultz

Appl. Phys. Lett. 48, 124 (1986); http://dx.doi.org/10.1063/1.96971 (3 pages) | Cited 119 times

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Amorphous alloy powders of the types NiZr, CoZr, FeZr, and CuZr are produced by mechanical alloying from crystalline elemental powders. The alloying and amorphization process is monitored by microstructural investigations, x‐ray diffraction, and, where applicable, by magnetization measurements. The crystallization temperatures, determined by differential scanning calorimetry, are comparable to those measured for rapidly quenched and solid state reacted amorphous metals of the same compositions.
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61.43.Fs Glasses
61.43.-j Disordered solids
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
81.05.Bx Metals, semimetals, and alloys
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Modeling and observation of photoconductivity in polycrystalline silicon

P. K. Singh, S. N. Singh, and R. Kishore

Appl. Phys. Lett. 48, 127 (1986); http://dx.doi.org/10.1063/1.96972 (3 pages) | Cited 6 times

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We have developed a phenomenological model for the photoconductivity in polycrystalline semiconductors which takes into account the contributions from the majority carriers due to mobility enhancement in addition to the contributions due to photogenerated excess (minority) carriers. The model is applicable for the cases of both partially and completely depleted grains at all intensities of illumination. The model is compared with the experimental data of photoconductivity as a function of intensity of illumination obtained in polycrystalline silicon at different temperatures. The data are in good agreement with the theoretical predictions. The results clearly demonstrate that in polycrystalline materials, photoconductivity is a majority carrier phenomenon at low optical illuminations irrespective of whether the suppression of grain boundary potential barriers is partial or complete. However, at high level conditions, the photoconductivity behavior becomes an excess carrier effect as observed in single crystals.
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72.40.+w Photoconduction and photovoltaic effects

Deep level transient spectroscopy of hole defects in bulk‐grown p‐GaAs using Schottky barrier diodes

F. D. Auret and M. Nel

Appl. Phys. Lett. 48, 130 (1986); http://dx.doi.org/10.1063/1.96973 (3 pages) | Cited 9 times

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Schottky barrier diodes were used to detect and study hole defects in bulk‐grown p‐type GaAs by deep level transient spectroscopy. Several defects with concentrations of 1013–1016/cm3 were studied. It was found that two of these defects, with electronic levels at Ev +0.42 eV and Ev +0.58 eV, have electronic properties that closely correspond to those of Cu‐ and Fe‐related defects in GaAs. It is concluded that Schottky barrier diodes on p‐GaAs can be very useful to detect and characterize typical metallic contaminants in GaAs.
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78.40.Fy Semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors

P. J. McWhorter and P. S. Winokur

Appl. Phys. Lett. 48, 133 (1986); http://dx.doi.org/10.1063/1.96974 (3 pages) | Cited 177 times

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A new technique is presented for separating the threshold‐voltage shift of a metal‐oxide‐semiconductor transistor into shifts due to interface traps and trapped‐oxide charge. This technique is applied to threshold‐voltage shifts on an n‐channel transistor that result from ionizing radiation.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.20.-r Electron states at surfaces and interfaces
85.30.Tv Field effect devices

Location of positive charge trapped near the Si‐SiO2 interface at low temperature

S. T. Chang and S. A. Lyon

Appl. Phys. Lett. 48, 136 (1986); http://dx.doi.org/10.1063/1.96975 (3 pages) | Cited 31 times

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A new technique has been developed to obtain the depth profile of trapped positive charge which has been introduced into the SiO2 layer in metal‐oxide‐silicon structures at low temperature. We use photon‐assisted tunneling at a fixed photon energy to inject electrons from the Si into the SiO2. Trapped positive charge located closer to the interface than the point at which the electrons emerge into the oxide conduction band is not affected, while that farther away can capture electrons. From the shifts of the capacitance versus voltage curves at various biases we can profile the location of the trapped positive charge. We demonstrate the use of this technique with a comparison of the positive charge introduced by x irradiation and Fowler–Nordheim tunneling (high‐field stress). For the x‐ray irradiated samples, the positive charge is located considerably farther (20–35 Å) from the Si‐SiO2 interface than for high‐field stressed samples (<20 Å).
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Ng Insulators

Hall‐effect measurements in p‐type InGaAs/GaAs strained‐layer superlattices

I. J. Fritz, L. R. Dawson, T. J. Drummond, J. E. Schirber, and R. M. Biefeld

Appl. Phys. Lett. 48, 139 (1986); http://dx.doi.org/10.1063/1.96976 (3 pages) | Cited 12 times

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We report, for the first time, temperature‐dependent Hall data for holes in modulation‐doped In0.2Ga0.8As/GaAs strained‐layer superlattices. Samples with (compressive) planar strains of −0.5% to −1.2% in the InGaAs quantum wells were used, providing a range of configurations for the two (overlapping) sets of valence‐band quantum wells derived from the bulk heavy‐ and light‐hole bands. All samples exhibit transfer of holes into the InGaAs quantum wells at low temperature; however, the sample with the least strain shows evidence for gradual carrier freeze‐out over a wide range of temperature.
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72.20.Fr Low-field transport and mobility; piezoresistance
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy

J. M. Hong, S. Wang, T. Sands, J. Washburn, J. D. Flood, J. L. Merz, and T. Low

Appl. Phys. Lett. 48, 142 (1986); http://dx.doi.org/10.1063/1.96977 (3 pages) | Cited 8 times

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Optical‐quality GaAs films were successfully grown by molecular beam epitaxy (MBE) through SiO2 insulator windows on GaAs (100) substrates, thus making this selective‐area epitaxy applicable to the fabrication of GaAs optoelectronic integrated circuits. The photoluminescence spectra at 2.2 K consist of several exciton peaks near 820 nm and broader acceptor‐related peaks centered at approximately 830 nm. The spectra are comparable to those observed in high quality planar MBE GaAs grown in other laboratories. The luminescence intensity from the epitaxial layer above the windows is shown by cathodoluminescence to be much higher than that from the polycrystalline GaAs deposited on top of SiO2. From transmission electron microscopy and x‐ray diffractometry it is found that the GaAs grains on the SiO2 grow with their (111) planes preferentially parallel to the SiO2 surface.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.40.Bh Computer-aided design of microcircuits; layout and modeling
85.60.-q Optoelectronic devices
78.40.Fy Semiconductors

Fabrication of arrays of GaAs optical bistable devices

T. Venkatesan, B. Wilkens, Y. H. Lee, M. Warren, G. Olbright, H. M. Gibbs, N. Peyghambarian, J. S. Smith, and A. Yariv

Appl. Phys. Lett. 48, 145 (1986); http://dx.doi.org/10.1063/1.96978 (3 pages) | Cited 19 times

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Arrays of fast optical bistable devices (OBD’) hold excellent promise in the implementation of parallel optical computation systems. The fabrication of an array of 9×9 μm pixels of OBD’s on a GaAs/AlGaAs molecular beam epitaxial layer is reported here. The pixels were defined by reactive ion etching in a freon, helium, and oxygen gas mixture. The array, consisting of over 100×100 devices, formed good quality, uniform interferometers, exhibiting a single fringe in transmitted light. Gate recovery times were reduced by eliminating the top AlGaAs window and by etching 9×9 μm pixels in an array. Uniform arrays of such high quality optical gates or bistable devices could handle thousands of parallel channels at a rate of several gigahertz per channel.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Picosecond time‐of‐flight measurements of minority electrons in GaAs/AlGaAs quantum well structures

R. A. Höpfel, J. Shah, D. Block, and A. C. Gossard

Appl. Phys. Lett. 48, 148 (1986); http://dx.doi.org/10.1063/1.96979 (3 pages) | Cited 19 times

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We report direct measurements of drift velocities of photoexcited minority electrons in p‐doped quantum well structures of GaAs/Al0.48Ga0.52As, using picosecond time‐of‐flight techniques. At low electric fields the electron mobility is strongly reduced by electron‐hole scattering. At high fields (>8 kV/cm) negative differential mobility is observed, which we interpret as real‐space and valley transfer of hot electrons into the X valley of Al0.48Ga0.52As. From the photoluminescence spectra the carrier temperatures at which the transfer effects occur are determined.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Ht High-field and nonlinear effects
78.40.Fy Semiconductors

Enhanced ‘‘tail’’ diffusion of phosphorus and boron in silicon: Self‐interstitial phenomena

F. F. Morehead and R. F. Lever

Appl. Phys. Lett. 48, 151 (1986); http://dx.doi.org/10.1063/1.96980 (3 pages) | Cited 61 times

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It is well known that high surface concentration phosphorus diffusion leads to deeply penetrating ‘‘tails’’ in its concentration profile. At 700 °C the tail diffusivity exceeds that of low concentration phosphorus by a factor of 1000. Less spectacular, but very significant tailing also affects boron, making the conventional models contained in commonly available process simulation programs quite inaccurate for high concentrations of boron. We show that the observed tailing can be accounted for by a model whose central assumption is the local equality of dopant and oppositely directed defect fluxes.
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66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.jd Vacancies
61.72.jj Interstitials

Shallow p‐type layers in InP by Hg implantation

P. N. Favennec, H. L’Haridon, J. M. Roquais, M. Salvi, X. Le Cleach, and L. Gouskov

Appl. Phys. Lett. 48, 154 (1986); http://dx.doi.org/10.1063/1.96981 (3 pages) | Cited 3 times

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Ion implantation of mercury in n‐type and semi‐insulating indium phosphide is reported in InP. We show how mercury behaves in InP in terms of type of dopant, electrical activity, and diffusivity. Implanted mercury impurity behaves as an acceptor dopant in InP. Thin p‐type layers have been obtained. Mercury profiles and electrical profiles show that mercury does not diffuse towards the bulk during annealing; therefore, mercury implantation can be a valuable technique in realizing shallow p‐type layers in indium phosphide.
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61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions
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