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13 Jan 1986

Volume 48, Issue 2, pp. 83-198

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Luminescence of Ga1−xAlxAs/GaAs single quantum wells grown by liquid phase epitaxy

K. Kelting, K. Koehler, and P. Zwicknagl

Appl. Phys. Lett. 48, 157 (1986); http://dx.doi.org/10.1063/1.96929 (3 pages) | Cited 7 times

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Low‐temperature liquid phase epitaxy is used to grow Ga0.6Al0.4As/GaAs/Ga0.6Al0.4As single quantum wells. Photoluminescence (T=2 K) reveals well thicknesses from 7 to 2.4 nm. Micrographs show that the spatial origin of highly intense luminescence (T=300 K) is in the GaAs layer.
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78.40.Fy Semiconductors
68.55.-a Thin film structure and morphology
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs

Takafumi Yao and Toshihiko Takeda

Appl. Phys. Lett. 48, 160 (1986); http://dx.doi.org/10.1063/1.96930 (3 pages) | Cited 71 times

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Atomic layer epitaxy of zinc chalcogenide single crystalline films on a (001) GaAs substrate is studied. It is observed that the average thickness per one cycle of opening and closing the shutters of the constituent elements corresponds to one monolayer thickness. The initial and successive stages of the epitaxy are investigated by reflection high‐energy electron diffraction. Three‐dimensional growth mechanism dominates at the initial stage of the heteroepitaxy, while pseudo‐two‐dimensional growth mechanism dominates after the deposition of more than 1000 monolayers. However, the growth of ZnSe on ZnTe and vice versa is dominated by the two‐dimensional growth mechanism.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Microcrystalline to amorphous transition in silicon from microwave plasmas

J. J. Schellenberg, R. D. McLeod, S. R. Mejia, H. C. Card, and K. C. Kao

Appl. Phys. Lett. 48, 163 (1986); http://dx.doi.org/10.1063/1.96931 (2 pages) | Cited 5 times

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An experimental study has been made of Si:H thin films prepared by microwave plasma deposition, in which conditions of electron cyclotron resonance can be obtained in the plasma due to an externally applied axial dc magnetic field B. It is observed that as B is increased through resonance, the structure of the deposited films changes from microcyrstalline to amorphous.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.75.-d Plasma devices
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification

Superior characteristics of nitridized thermal oxide grown on polycrystalline silicon

Chiou‐Feng Chen and Ching‐Yuan Wu

Appl. Phys. Lett. 48, 165 (1986); http://dx.doi.org/10.1063/1.97029 (3 pages) | Cited 3 times

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Polycrystalline silicon dioxide (poly‐oxide) nitridized at high temperatures in ammonia ambient has been characterized by using ramp current‐voltage (I‐V) and constant current stressed voltage‐time (V‐t) measurements. It is found that the nitridized poly‐oxide has less leakage current and stronger dielectric field strength as compared to conventional poly‐oxide. These advantages are attributed to the slightly increased trapping effect and the less severe asperity effect of the nitridized poly‐oxide. It has been shown that the nitridized poly‐oxide is a good material for applications in high density electrically erasable and programmable read only memory (EEPROM) devices.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
81.05.Kf Glasses (including metallic glasses)
81.65.-b Surface treatments
85.30.De Semiconductor-device characterization, design, and modeling

Infrared spectroscopy of interfaces in amorphous hydrogenated silicon/silicon nitride superlattices

B. Abeles, L. Yang, P. D. Persans, H. S. Stasiewski, and W. Lanford

Appl. Phys. Lett. 48, 168 (1986); http://dx.doi.org/10.1063/1.96932 (3 pages) | Cited 31 times

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Infrared and atomic composition measurements of a‐Si@B:H/a‐SiNx@B:H superlattices as a function of repeat distance show ∼1×1015 cm−2 extra hydrogen bonded to Si at the interface formed when a‐Si:H is deposited on a‐SiNx@B:H. The H distribution peaks in the first monolayer and decays in the a‐Si:H layer over a distance of ∼19 Å. The hydrogen relieves the large lattice mismatch between the two layers and pacifies defects.
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68.35.Fx Diffusion; interface formation
68.35.Dv Composition, segregation; defects and impurities
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
75.20.Ck Nonmetals

Doped hydrogenated amorphous silicon films by laser‐induced chemical vapor deposition

H. M. Branz, S. Fan, J. H. Flint, B. T. Fiske, D. Adler, and J. S. Haggerty

Appl. Phys. Lett. 48, 171 (1986); http://dx.doi.org/10.1063/1.96933 (3 pages) | Cited 11 times

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We report the growth and characterization of both n‐type and p‐type doped hydrogenated amorphous silicon films prepared by laser‐induced chemical vapor deposition. For both doping types, the activation energy for electrical conduction has been reduced to below 0.2 eV and controlled doping has been achieved. Phosphine lowers the growth rate, while diborane has essentially no effect on the laser‐induced growth but enhances thermal growth. Diborane also decreases the hydrogen concentration of the films, resulting in reduced optical gaps.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals

Laser selective deposition of GaAs on Si

S. M. Bedair, J. K. Whisnant, N. H. Karam, M. A. Tischler, and T. Katsuyama

Appl. Phys. Lett. 48, 174 (1986); http://dx.doi.org/10.1063/1.96934 (3 pages) | Cited 21 times

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GaAs films have been selectively deposited on Si substrates by laser induced chemical vapor deposition. An Ar+ laser was used to provide the required local heating on an otherwise relatively cool substrate to deposit GaAs spots and write GaAs lines. The deposition parameters were adjusted to deposit films with diameters in the range 1.5–500 μm and thicknesses in the range of 200 Å to several microns. Optical, chemical, and structural properties of the selectively deposited films have been studied. This technique can have potential applications in integrating optical and electronic devices on Si substrates.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification
75.20.Ck Nonmetals

Shifts in the flatband voltage of metal‐oxide‐silicon structure due to iodine in SiO2

L. Krusin‐Elbaum and G. A. Sai‐Halasz

Appl. Phys. Lett. 48, 177 (1986); http://dx.doi.org/10.1063/1.96935 (3 pages) | Cited 6 times

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We report the observation of positive shifts in the flatband voltage of metal‐oxide‐silicon structure as a consequence of iodine presence in the oxide. The positive shifts remain stable after thermal processing cycles, typical to very large scale integration, as well as under temperature‐voltage stress. This flatband behavior is obtained by direct implantation of iodine into SiO2 and subsequent anneal in the inert ambient. In contrast, if Si is first implanted with iodine and then oxidized, the resulting flatband shifts are stable, but negative. The shifts of both polarities occur without significant increase in the interface state density. In each case, they are correlated with the presence of iodine in the oxide as determined by secondary ion mass spectrometry.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
61.72.U- Doping and impurity implantation

〈100〉 and 〈111〉 textures in unseeded, strip heater recrystallized silicon‐on‐insulator

El Hang Lee

Appl. Phys. Lett. 48, 180 (1986); http://dx.doi.org/10.1063/1.96936 (3 pages) | Cited 1 time

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The graphite strip heater technique was used to obtain strongly preferred 〈100〉 or 〈111〉 textures for thin‐film silicon recrystallized on amorphous oxide and nitride substrates. Whereas 〈100〉 textures have been obtained in the liquid phase, 〈111〉 textures have been obtained in the solid phase at near‐melting temperatures. Films of 〈100〉 orientation displayed the usual sub‐boundaries, but 〈111〉 films revealed grainy textures mixed with pond ripple features. The lateral epitaxy model and the birth and spread model have been useful in distinguishing the two growth mechanisms. Films on Si3N4 substrates had characteristics similar to those on SiO2 substrates.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Two‐layer organic photovoltaic cell

C. W. Tang

Appl. Phys. Lett. 48, 183 (1986); http://dx.doi.org/10.1063/1.96937 (3 pages) | Cited 975 times

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A thin‐film, two‐layer organic photovoltaic cell has been fabricated from copper phthalocyanine and a perylene tetracarboxylic derivative. A power conversion efficiency of about 1% has been achieved under simulated AM2 illumination. A novel feature of the device is that the charge‐generation efficiency is relatively independent of the bias voltage, resulting in cells with fill factor values as high as 0.65. The interface between the two organic materials, rather than the electrode/organic contacts, is crucial in determining the photovoltaic properties of the cell.
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84.60.Jt Photoelectric conversion
72.80.Le Polymers; organic compounds (including organic semiconductors)
72.40.+w Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Selective growth of InP buried structure by chloride vapor phase epitaxy

Masataka Hoshino, Kazuhiro Tanaka, Junji Komeno, Kuninori Kitahara, Kunihiko Kodama, and Masashi Ozeki

Appl. Phys. Lett. 48, 186 (1986); http://dx.doi.org/10.1063/1.96938 (3 pages) | Cited 8 times

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Selective growth of an InP buried layer by In/PCl3/H2 vapor phase epitaxy was developed for buried layer GaInAsP/InP long wavelength laser diodes. For the first time, a completely flat‐surface buried layer was grown into grooves with good morphology on a (100) exactly oriented InP substrate, but not on a (100) 2° off oriented substrate. We found that the side of the groove was covered with a buried InP layer in the early stage of epitaxial growth. Therefore, the present selective growth would be effective for the protection of the interface between the active and buried layers from thermal degradation. The resistivity of InP, measured by using an n‐i‐n structure, was found to be higher than 103 Ω cm at room temperature, which is sufficient for the buried layer of an usual laser diode.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Simulations of fine structures on the zero field steps of Josephson tunnel junctions

M. Scheuermann, C. C. Chi, N. F. Pedersen, Jhy‐Jiun Chang, and J. T. Chen

Appl. Phys. Lett. 48, 189 (1986); http://dx.doi.org/10.1063/1.96939 (3 pages) | Cited 5 times

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Fine structures on the zero field steps of long Josephson tunnel junctions are simulated for junctions with the bias current injected into the junction at the edges. These structures are due to the coupling between self‐generated plasma oscillations and the traveling fluxon. The plasma oscillations are generated by the interaction of the bias current with the fluxon at the junction edges. On the first zero field step, the voltages of successive fine structures are given by Vn=ℏ/2e(2ωp/n), where n is an even integer.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices

Optical absorption of some polymers in the region 240–170 nm

H. R. Philipp, H. S. Cole, Y. S. Liu, and T. A. Sitnik

Appl. Phys. Lett. 48, 192 (1986); http://dx.doi.org/10.1063/1.96940 (3 pages) | Cited 46 times

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Absorption coefficients for some technologically important polymer materials are given in the wavelength range ∼240–170 nm. Absorption coefficients at 193 nm for these polymers show a wide range of values from ∼2×102 cm−1 for polytetrafluoroethylene (Teflon) to ∼4×105 cm−1 for polyimide. The general nature of the optical properties of polymers in the vacuum ultraviolet is also discussed.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Ha Other nonmetallic inorganics

Raman microprobe analysis during the direct laser writing of silicon microstructures

Frank Magnotta and Irving P. Herman

Appl. Phys. Lett. 48, 195 (1986); http://dx.doi.org/10.1063/1.96941 (3 pages) | Cited 7 times

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Raman microprobe techniques are used for the first time as a real‐time probe during local direct laser writing and also as an in situ probe after writing. The Stokes–Raman emission observed during pyrolytic deposition of micron‐dimension structures of silicon on germanium and vitreous carbon substrates is found to be weaker, more asymmetric, and to peak at a smaller Raman shift than the corresponding spectrum of the same structure similarly probed in situ after deposition. Results of detailed post‐deposition Raman analysis of these silicon microstructures are presented and compared to the Raman spectra of oven‐heated silicon. Potential applications of these techniques are discussed.
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82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
85.40.Bh Computer-aided design of microcircuits; layout and modeling
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
FREE

Erratum: Unstable resonator cavity semiconductor lasers [Appl. Phys. Lett. 46, 218 (1985)]

J. Salzman, T. Venkatesan, R. Lang, M. Mittelstein, and A. Yariv

Appl. Phys. Lett. 48, 198 (1986); http://dx.doi.org/10.1063/1.97038 (1 page)

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Abstract Unavailable
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
99.10.Cd Errata
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