Infrared and atomic composition measurements of a
H superlattices as a function of repeat distance show ∼1×1015
extra hydrogen bonded to Si at the interface formed when a
‐Si:H is deposited on a
H. The H distribution peaks in the first monolayer and decays in the a
‐Si:H layer over a distance of ∼19 Å. The hydrogen relieves the large lattice mismatch between the two layers and pacifies defects.