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20 Jan 1986

Volume 48, Issue 3, pp. 201-259


Real time image subtraction and ‘‘exclusive or’’ operation using a self‐pumped phase conjugate mirror

Sze‐Keung Kwong, George A. Rakuljic, and Amnon Yariv

Appl. Phys. Lett. 48, 201 (1986); http://dx.doi.org/10.1063/1.96795 (3 pages) | Cited 22 times

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Real time ‘‘exclusive or’’ operation with an interferometer using a self‐pumped phase conjugate mirror is reported. Also, results of image subtraction and intensity inversion are shown.
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42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.-e Optical elements, devices, and systems
42.30.Va Image forming and processing

A 1.55‐μm semiconductor‐optical fiber ring laser

R. M. Jopson, G. Eisenstein, M. S. Whalen, K. L. Hall, U. Koren, and J. R. Simpson

Appl. Phys. Lett. 48, 204 (1986); http://dx.doi.org/10.1063/1.97023 (3 pages) | Cited 8 times

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We demonstrate the first semiconductor‐optical fiber ring laser. The laser uses an InGaAsP traveling wave optical amplifier as the gain medium and a 1‐m length of highly birefringent fiber as the feedback loop. Output coupling is provided by a fiber directional coupler. The highly birefringent fiber is used as an intracavity wavelength filter, enabling single‐frequency oscillation with a narrow linewidth at a wavelength near 1.55 μm.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.81.Qb Fiber waveguides, couplers, and arrays

Room‐temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

Masayuki Ishikawa, Yasuo Ohba, Hideto Sugawara, Motoyuki Yamamoto, and Takatosi Nakanisi

Appl. Phys. Lett. 48, 207 (1986); http://dx.doi.org/10.1063/1.96796 (2 pages) | Cited 80 times

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Room‐temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low‐pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24 °C were obtained for an inner stripe structure laser diode with a 250‐μm‐long and 7‐μm stripe geometry. The laser operated at up to 51 °C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cm2, was obtained with a 20‐μm stripe width laser diode under room‐temperature pulsed operation.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.45.+h Stimulated emission

Anomalous surface transformations in crystalline silicon induced by subpicosecond laser pulses

Yoshihiko Kanemitsu, Yuzo Ishida, Ichiroh Nakada, and Hiroto Kuroda

Appl. Phys. Lett. 48, 209 (1986); http://dx.doi.org/10.1063/1.96797 (3 pages) | Cited 8 times

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Surface transformations in crystalline silicon are investigated, using 400 fs laser pulses, at intensities just above the melting threshold. Anomalous changes of surface heights are observed, and they are enhanced for shorter pulses. These experimental results are well understood with a picture that shock stress generated by the ultrashort pulse excitation causes anomalous surface transformations of crystalline silicon.
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68.35.Rh Phase transitions and critical phenomena
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Velocity distribution of molecular fragments from polymethylmethacrylate irradiated with UV laser pulses

B. Danielzik, N. Fabricius, M. Röwekamp, and D. von der Linde

Appl. Phys. Lett. 48, 212 (1986); http://dx.doi.org/10.1063/1.96798 (3 pages) | Cited 53 times

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Polymethylmethacrylate samples are irradiated with pulses from an ArF excimer laser at λ=193 nm. The velocities of ablated particles are measured with the use of a quadrupole mass spectrometer. For laser fluences <120 mJ/cm2 we observe thermal, Maxwell–Boltzmann velocity distributions. The photofragments possess a common temperature which increases with fluence to values as high as 3000 K.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena

20% efficiency silicon solar cells

A. W. Blakers and M. A. Green

Appl. Phys. Lett. 48, 215 (1986); http://dx.doi.org/10.1063/1.96799 (3 pages) | Cited 31 times

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Further improvements in crystalline silicon solar cell performance have been obtained by combining the high levels of surface recombination control demonstrated in earlier passivated emitter solar cells with an improved optical approach. This approach involves the use of microgrooved surfaces which retain the advantages of pyramidally textured surfaces while avoiding some disadvantages of the latter. The approach results in a 5–6% improvement in cell short‐circuit current density for cells fabricated on 0.1 and 0.2 Ω cm ( p type) substrates. This results in an energy conversion efficiency for these devices above 20% under standard terrestrial test conditions (AM1.5, 100 mW/cm2) for the first time.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
85.30.-z Semiconductor devices

Nonlinear photothermal imaging

Y. N. Rajakarunanayake and H. K. Wickramasinghe

Appl. Phys. Lett. 48, 218 (1986); http://dx.doi.org/10.1063/1.96800 (3 pages) | Cited 18 times

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A new technique is described whereby one can extract the nonlinear photothermal properties of a sample in photothermal microscopy. The basic scheme relies on chopping a pump heating beam at ω and detecting the temperature variation of the sample using a linear temperature sensor (in our case a mirage detector) tuned to 2ω. Harmonic images of cracks and other samples show very high contrast when compared with the fundamental image.
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46.80.+j Measurement methods and techniques in continuum mechanics of solids
62.20.M- Structural failure of materials
81.70.-q Methods of materials testing and analysis
65.90.+i Other topics in thermal properties of condensed matter (restricted to new topics in section 65)

Boron doping in Si molecular beam epitaxy by co‐evaporation of B2O3 or doped silicon

R. M. Ostrom and F. G. Allen

Appl. Phys. Lett. 48, 221 (1986); http://dx.doi.org/10.1063/1.96801 (3 pages) | Cited 19 times

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We report on controlled boron doping of silicon molecular beam epitaxy (MBE) films by two techniques: sublimation of saturated boron‐doped silicon from a boron nitride crucible and evaporation of B2O3 from a tungsten crucible. Both methods were performed with the simultaneous evaporation of undoped silicon from an electron beam source. Sharp doping profiles and constant evaporation rates were obtained for both methods. Doping levels between 2×1017 and 1.5×1020 cm−3 were realized. The evaporations require only relatively low temperatures: 700–1150 °C for B2O3 and 1000–1400 °C for subliming silicon. These results make it possible to replace gallium as the p‐type evaporative dopant in silicon MBE with the more desirable boron without using ion imbedding or a very high crucible temperature.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Nitrogen effect on oxygen precipitation in Czochralski silicon

F. Shimura and R. S. Hockett

Appl. Phys. Lett. 48, 224 (1986); http://dx.doi.org/10.1063/1.96564 (3 pages) | Cited 54 times

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The nitrogen effect on enhancement of oxygen precipitation in Czochralski‐grown silicon wafers has been investigated by means of a preferential chemical etching technique and secondary ion mass spectroscopy. The precipitate enhancement is evident in an oxygen out‐diffused region in which oxygen precipitation does not normally occur. Incorporation of the nitrogen atoms in substitutional sites to generate very stable microdefects in Czochralski‐grown silicon crystals can explain the nitrogen effect on oxygen precipitation.
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81.30.Mh Solid-phase precipitation
61.72.uf Ge and Si
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities

Capacitance and conductance deep level transient spectroscopy in field‐effect transistors

I. D. Hawkins and A. R. Peaker

Appl. Phys. Lett. 48, 227 (1986); http://dx.doi.org/10.1063/1.96565 (3 pages) | Cited 20 times

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An analysis of conductance transients in field‐effect transistors for small values of drain‐source voltage is presented which enables absolute values of trap concentration to be evaluated. The relationships use parameters which can be easily measured as distinct from the estimated values of mobility profiles used in previously published calculations. Excellent quantitative agreement between capacitance and conductance results on large area gallium arsenide field‐effect transistors has been obtained. In addition, conductance deep level transient studies have demonstrated that the method of measurement and analysis can be used for micron and submicron devices which are much too small for capacitive measurements.
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85.30.Tv Field effect devices
78.40.Fy Semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Reactive ion beam etching of InP with N2 and N2/O2 mixtures

W. Katzschner, U. Niggebrügge, R. Löffler, and H. Schröter‐Janssen

Appl. Phys. Lett. 48, 230 (1986); http://dx.doi.org/10.1063/1.96566 (3 pages) | Cited 16 times

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A reactive ion beam etching process (RIBE) of InP with N2 and N2/O2 mixtures is described. The application of N2 or N2/O2 ion beams to InP results in high quality surfaces with the virtual elimination of cone formation. The influence of the process parameters ion incidence angle, ion energy, ion beam current density, and N2/O2 ratio on etching rates is given for InP, Ni, Ti, Al, Si, and two types of photoresist (AZ4210, MP15). N2 RIBE has been used for the fabrication of grating structures with λ=2400 Å periodicity. The gratings have been overgrown by liquid phase epitaxy without any degradation of the initial shape of the structure.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
42.82.-m Integrated optics

Crosstalk of the dynamical dissipative behavior between different parts in a current‐carrying semiconductor

B. Röhricht, B. Wessely, J. Parisi, and J. Peinke

Appl. Phys. Lett. 48, 233 (1986); http://dx.doi.org/10.1063/1.97014 (3 pages) | Cited 6 times

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We have experimentally demonstrated the long‐range crosstalk of transient chaotic behavior between separate parts of a single p‐Ge crystal. Our experiments focused on the mutual coupling of the different intrinsic current oscillations generated in each part during the electric avalanche breakdown at liquid helium temperatures. Our results help to clarify the unwanted hot‐carrier effects with respect to very large scale integration semiconductor circuits.
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85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
72.70.+m Noise processes and phenomena
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Raman scattering from ZnTe‐ZnSe strained‐layer superlattices

S. Nakashima, Y. Nakakura, H. Fujiyasu, and K. Mochizuki

Appl. Phys. Lett. 48, 236 (1986); http://dx.doi.org/10.1063/1.96567 (3 pages) | Cited 26 times

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Raman scattering measurements have been made to determine the elastic deformation in ZnTe‐ZnSe strained‐layer superlattices grown by hotwall epitaxy. Both ZnSe‐ and ZnTe‐like modes have been observed, which confirms the formation of a superlattice in the multilayer system having a large lattice mismatch between host layers. We observe that the frequencies of the ZnSe‐like longitudinal and transverse phonon modes vary strikingly with the relative thickness of ZnTe and ZnSe layers. This effect is fully accounted for by uniform misfit strains which accommodate the lattice mismatch of the host.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.30.Hv Other nonmetallic inorganics
68.60.Bs Mechanical and acoustical properties

Double‐crystal x‐ray topographic studies of bulk and epitaxially grown ZnxCd1−xTe (0.0≤x≤0.06)

Syed B. Qadri, M. Fatemi, and J. H. Dinan

Appl. Phys. Lett. 48, 239 (1986); http://dx.doi.org/10.1063/1.96568 (3 pages) | Cited 11 times

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The first double‐crystal topographic studies of epitaxial layers of ZnxCd1−xTe (0≤x≤0.06) grown by molecular beam epitaxy are reported in this letter. A comparison of bulk and epitaxially grown ZnCdTe clearly indicates that the epitaxial layers are of better structural quality and are more suitable for use as substrates for growth of HgCdTe.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Organometallic vapor phase epitaxial growth of GaInP/GaAs (AlGaAs) heterostructures

J. R. Shealy, C. F. Schaus, and L. F. Eastman

Appl. Phys. Lett. 48, 242 (1986); http://dx.doi.org/10.1063/1.96569 (3 pages) | Cited 5 times

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The growth of GaInP/AlGaAs heterostructures by organometallic vapor phase epitaxy is reported. It was observed that different GaInP alloy compositions are required to lattice match films to AlGaAs and GaAs buffer layers for optimum results. Quantum well heterostructures with GaInP regions as narrow as 30 Å have been produced with abrupt transitions of the group III and group V species across each interface. The results suggest that this material system is suitable for the fabrication of high efficiency visible light sources.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.40.Fy Semiconductors
42.72.-g Optical sources and standards

Electron‐hole recombination at the Si‐SiO2 interface

E. Yablonovitch, R. M. Swanson, W. D. Eades, and B. R. Weinberger

Appl. Phys. Lett. 48, 245 (1986); http://dx.doi.org/10.1063/1.96570 (3 pages) | Cited 21 times

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See Also: Erratum

Show Abstract
We have measured the surface recombination current J(ns,ps) at high quality thermally grown Si‐SiO2 interfaces as a function of the surface density of electrons and holes, ns and ps. We find that the recombination is dominated by centers whose electron capture cross section is about 100 times greater than their hole capture cross section. Therefore, the maximum recombination occurs when ps≊100ns. Recombination is minimized under extreme electron or hole accumulation and is coincidentally the same in both cases: exp(qV/kT)×10−14 A/cm2.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Influence of Ga‐As‐Te interfacial phases on the orientation of epitaxial CdTe on GaAs

R. D. Feldman, R. F. Austin, D. W. Kisker, K. S. Jeffers, and P. M. Bridenbaugh

Appl. Phys. Lett. 48, 248 (1986); http://dx.doi.org/10.1063/1.96571 (3 pages) | Cited 43 times

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When CdTe is grown by molecular beam or organometallic vapor phase epitaxy on (100) GaAs, the layer can grow with either a (100) or (111) orientation. Reflection high‐energy electron diffraction and Auger studies are presented here which show that adsorption of different submonolayer amounts of Te on a GaAs surface can change the surface symmetry and the resulting CdTe orientation. A precursor surface to (111) growth results from the formation of a relatively Te‐poor Ga‐As‐Te surface phase. A relatively Te‐rich structure yields a surface with (100) symmetry and lead to (100) growth.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Photopumped laser operation of GaAs doping superlattices

B. A. Vojak, G. W. Zajac, F. A. Chambers, J. M. Meese, P. E. Chumbley, R. W. Kaliski, N. Holonyak, and D. W. Nam

Appl. Phys. Lett. 48, 251 (1986); http://dx.doi.org/10.1063/1.96572 (3 pages) | Cited 6 times

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The photopumped laser operation of GaAs doping superlattices grown by molecular beam epitaxy is reported. As expected, laser emission is at lower energy than that of bulk undoped GaAs. This emission is attributed to donor to acceptor transitions that occur after the doping superlattice is excited to a flatband condition. Laser operation via electron to hole tunneling and recombination at lower energies, which requires extremely low thresholds, is not observed.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Self‐aligned contact process for Nb/Al‐AlOx/Nb Josephson junctions

Shin’ichi Morohashi, Shinya Hasuo, and Toyoshi Yamaoka

Appl. Phys. Lett. 48, 254 (1986); http://dx.doi.org/10.1063/1.96573 (3 pages) | Cited 27 times

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High quality Nb/Al‐AlOx/Nb Josephson junctions have been fabricated by a novel process named the self‐aligned contact process. After the definition of the junction area by a reactive ion etching (RIE) technique, the exposed Nb layer and the junction edge are anodized to protect against electrical shorts and an Al film is deposited as the etching stopper layer. After base electrode patterning by RIE, an insulation layer is deposited. The contact hole, with the diameter of the junction, for connecting a counter electrode and a wiring layer, can be made without registration because of the deposited Al film. The junctions fabricated by this process have exhibited excellent current‐voltage characteristics (Vm =70 mV at the critical current density  jJ =1.8 kA/cm2, Vm =11 mV at  jJ =20 kA/cm2).
Show PACS
85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects

Universal expressions of projected range and damage distributions

Yoshiaki Kido and Junichi Kawamoto

Appl. Phys. Lett. 48, 257 (1986); http://dx.doi.org/10.1063/1.96574 (3 pages) | Cited 1 time

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Depth distributions of implanted ions and induced defects have been determined by backscattering (including channeling) and nuclear resonance reaction measurements followed by computer‐simulated spectrum analyses. The reduced energies cover the range from 0.1 to 5. We demonstrate that the average projected range and average damage depth can be expressed universally as functions of an average reduced energy by introducing a new scaling coefficient. Simple, unified relations of relative range and damage stragglings versus average reduced energy have also been found to hold.
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61.72.-y Defects and impurities in crystals; microstructure
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.80.Jh Ion radiation effects
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