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3 Feb 1986

Volume 48, Issue 5, pp. 309-378


50× optical fiber pulse compression at 1.319 μm

K. Tai and A. Tomita

Appl. Phys. Lett. 48, 309 (1986); http://dx.doi.org/10.1063/1.96589 (3 pages) | Cited 14 times

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We report a 50‐fold fiber‐grating pulse compression in the near‐infrared region. 100 ps (FWHM) pulses from a mode‐locked neodymium:yttrium aluminum garnet laser operated at 1.319 μm have been compressed into 2 ps pulses by using a 2‐km dispersion‐shifted fiber and a grating pair separated by 2.41 m in a double‐pass configuration. The novel feature of this demonstration is the use of dispersion‐shifted fiber (zero‐dispersion wavelength at 1.59 μm) for producing a linear chirp over most of the pulse and, thus, almost all the input power appears in the compressed pulse.
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42.81.Dp Propagation, scattering, and losses; solitons
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

InGaAsP ridge waveguide laser array with nonuniform spacing

N. K. Dutta, L. A. Koszi, B. P. Segner, and S. G. Napholtz

Appl. Phys. Lett. 48, 312 (1986); http://dx.doi.org/10.1063/1.96590 (3 pages) | Cited 2 times

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The fabrication and performance characteristics of InGaAsP (λ∼1.3 μm) ridge waveguide laser arrays are described. The ridges have variable spacing but are chosen to be of equal widths so that the propagation constants, which determine the emission wavelengths, of the individual emitters are equal. The lasers have threshold currents in the range 300–350 mA at 30 °C and have been operated to pulsed output powers of 600 mW/facet. The far field along the junction plane is single lobed with a width characteristic of a phase locked, diffraction limited beam. Measurements of cw emission spectrum also show emission in a single fundamental supermode.
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42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optically pumped laser oscillation at 3.9 μm from Al0.5Ga0.5Sb/InAs0.91Sb0.09/Al0.5Ga0.5Sb double heterostructures grown by molecular beam epitaxy on GaSb

J. P. van der Ziel, T. H. Chiu, and W. T. Tsang

Appl. Phys. Lett. 48, 315 (1986); http://dx.doi.org/10.1063/1.96537 (3 pages) | Cited 13 times

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Double heterostructures consisting of InAs0.91 Sb0.09 active layers with Al0.5 Ga0.5Sb cladding layers were grown by molecular beam epitaxy on GaSb substrates. Optically pumped laser emission at 3.9 μm was observed from 80 to 135 K with an exponentially dependent threshold with T0=17  K. At 80 K the threshold corresponds to an effective current of 4 kA/cm2. This value represents a significant reduction when compared with previous results. For a 1‐μm‐thick active layer the full angular width of the far field at the half intensity point normal to the junction is 40° and is in reasonable agreement with the width calculated from the guide and cladding refractive indices.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.45.+h Stimulated emission
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Expanding beam concept for building very large excimer laser amplifiers

J. H. Jacob, M. Rokni, R. E. Klinkowstein, and S. Singer

Appl. Phys. Lett. 48, 318 (1986); http://dx.doi.org/10.1063/1.96538 (3 pages) | Cited 5 times

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Optical extraction efficiency from conventional lasers and amplifiers with nonsaturable intrinsic absorption is substantially below the maximum efficiency at absorption length products exceeding unity. This result is caused by the fact that high intensities in the amplifier cause saturation of gain but not absorption. In this letter, a new scalable amplifier concept is analyzed which maintains near maximum extraction efficiency as the laser length increases beyond absorption length products of unity.
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42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Femtojoule optical switching in nonlinear semiconductor laser amplifiers

W. F. Sharfin and M. Dagenais

Appl. Phys. Lett. 48, 321 (1986); http://dx.doi.org/10.1063/1.96539 (2 pages) | Cited 19 times

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We have demonstrated the operation of an optical switch requiring less than 1 f J (<7000 photons) of incident optical energy. The switch operates at room temperature, is compatible with optical communication systems, and is cascadable because it has gain. The switching times (on and off) are determined to be less than 1 ns. This device significantly advances the possibility for realization of high throughput optical signal processing and digital optical computing.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Phase insensitive detection of laser‐generated ultrasound

D. A. Hutchins and J. H. Page

Appl. Phys. Lett. 48, 323 (1986); http://dx.doi.org/10.1063/1.96540 (3 pages) | Cited 5 times

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An acoustic source formed by pulsed laser irradiation has been used to investigate the piezoelectric and acoustoelectric effects within a cadmium sulphide detector. Analysis of detected waveforms has enabled the two effects to be identified. The resulting transducer combination has application to imaging systems, where phase insensitivity may be required.
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43.35.Yb Ultrasonic instrumentation and measurement techniques
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
72.50.+b Acoustoelectric effects
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
43.38.Gy Semiconductor transducers
77.65.-j Piezoelectricity and electromechanical effects

Dynamic characteristics of dislocations in indium‐doped gallium arsenide crystal

Ichiro Yonenaga, Koji Sumino, and Koji Yamada

Appl. Phys. Lett. 48, 326 (1986); http://dx.doi.org/10.1063/1.96541 (3 pages) | Cited 14 times

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Characteristics in the motion of dislocations generated from scratches in GaAs doped with In at a concentration of 2×1020 atoms/cm3 are investigated and are compared with those in undoped GaAs. α dislocations in In‐doped GaAs are found to be immovable under stress lower than 10 MPa in the temperature range 350–750 °C. Such immovability under low stress is not found for β dislocations in In‐doped GaAs and for both α and β dislocations in undoped GaAs.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

Formation of a new deep emission in Si+, S+, Se+, and Te+ ion‐implanted GaAs

Yunosuke Makita, Yoshinori Takeuchi, Toshio Nomura, Hideki Tanaka, Toshihiko Kanayama, Hisao Tanoue, Katsuhiro Irie, and Nobukazu Ohnishi

Appl. Phys. Lett. 48, 329 (1986); http://dx.doi.org/10.1063/1.97013 (3 pages) | Cited 9 times

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Photoluminescence studies of Si+, S+, Se+, and Te+ ion‐implanted GaAs made by molecular beam epitaxy were carried out at 2 K. A new emission denoted by [D] was commonly obtained at 1.408 eV. It was also found that the controversial near band‐edge emissions, ‘g’ and [g‐g], which were originally produced by the ion implantation of acceptor impurities, were not formed by donor ion implantation.
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78.40.Fy Semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Stacking faults in WSi2: Resistivity effects

F. M. d’Heurle, F. K. LeGoues, R. Joshi, and Ilka Suni

Appl. Phys. Lett. 48, 332 (1986); http://dx.doi.org/10.1063/1.96542 (3 pages) | Cited 22 times

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Films of WSi2 initially deposited in an amorphous form have been known to display an unexpected resistivity maximum when annealed at a temperature corresponding to the transition from the low‐temperature hexagonal structure to the high‐temperature tetragonal structure. It is shown that the resistivity maximum is due to an extremely high (5×106/cm) density of stacking faults. Thus, at least one of the scattering defects which contribute to the relatively high resistivity of WSi2 films has been identified.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
64.70.K- Solid-solid transitions

Surface‐energy‐driven secondary grain growth in thin Au films

Chee C. Wong, Henry I. Smith, and C. V. Thompson

Appl. Phys. Lett. 48, 335 (1986); http://dx.doi.org/10.1063/1.96543 (3 pages) | Cited 45 times

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Secondary grain growth in thin Au films on SiO2 substrates is reported. Secondary grains have {111} texture which minimizes the surface energy. This indicates that surface energy anisotropy provides selectivity in the driving force for growth of secondary grains. In thin Au films on SiO2, surface‐energy‐driven secondary grain growth occurs at room temperature as soon as a film becomes continuous. This mode of grain growth is, most likely, responsible for the development of the frequently observed {111} deposition texture in thin Au films.
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68.55.-a Thin film structure and morphology
68.60.Wm Other nonelectronic physical properties

Phase selection during pulsed laser annealing of manganese

D. M. Follstaedt, P. S. Peercy, and J. H. Perepezko

Appl. Phys. Lett. 48, 338 (1986); http://dx.doi.org/10.1063/1.96544 (3 pages) | Cited 6 times

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Pulsed (25 ns) laser‐induced heating of the α phase of Mn is found to be sufficiently rapid to bypass solid‐state transformation to the high‐temperature β, γ, and δ allotropes and thus produce melts that are calculated to be undercooled by ∼120 K with respect to the equilibrium melting temperature of the δ phase. Nucleation of the γ phase in this highly undercooled melt is observed for sufficiently long melt durations. The experiments thus demonstrate that pulsed laser‐induced melting of metals with allotropes permits the study of nucleation and growth in highly undercooled melts with calculable temperatures.
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64.70.D- Solid-liquid transitions
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
64.60.Q- Nucleation

Distinction between near infrared optical absorption and light scattering in semi‐insulating GaAs

M. S. Skolnick and M. R. Brozel

Appl. Phys. Lett. 48, 341 (1986); http://dx.doi.org/10.1063/1.96545 (3 pages) | Cited 8 times

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Simultaneous infrared transmission and laser light scattering experiments on GaAs grown by the liquid encapsulated Czochralski technique are reported. Low‐temperature photoquenching experiments are employed to demonstrate in a direct way that the nonuniform infrared images of large diameter GaAs crystals arise from absorption rather than scattering processes.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.30.Hv Other nonmetallic inorganics

Characteristics and mechanism of 1/f noise in GaAs Schottky barrier field‐effect transistors

P. A. Folkes

Appl. Phys. Lett. 48, 344 (1986); http://dx.doi.org/10.1063/1.96546 (3 pages) | Cited 6 times

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Measurements of the absolute spectral density of 1/f noise in GaAs Schottky barrier field‐effect transistors (MESFET’s) show that 1/f noise consists of a surface component and a separable uncorrelated bulk component. The surface component is caused by trapping of electrons by surface states. The bulk component is correlated with the low field electron mobility and deep level trap concentration versus depletion depth profiles and can only be explained by the random fluctuations in the occupancy of deep level traps in the depletion region. A simple model quantitatively explains the observed characteristics of the bulk component of the noise at a low drain voltage. At normal operating drain voltages the observed 1/f noise characteristics are consistent with the model.
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72.70.+m Noise processes and phenomena
85.30.Tv Field effect devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance

Nitrogen related doping with implant Si3N4 formation in Si

D. Eirug Davies, Joseph A. Adamski, and E. F. Kennedy

Appl. Phys. Lett. 48, 347 (1986); http://dx.doi.org/10.1063/1.96547 (3 pages) | Cited 7 times

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A heavily conducting region has been observed on implanting nitrogen into silicon for forming a buried dielectric layer. The conduction predominantly occurs in the surface silicon layer adjacent to the higher nitrogen content isolating region. The doping, ≳1018 cm−3 and exceeding previously observed nitrogen related doping, is relatively stable at customary 1150–1200 °C processing temperatures and its elimination requires annealing ≳1300 °C.
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61.72.uf Ge and Si
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

In situ observation of lamp zone melting of Si films on patterned SiO2

D. Dutartre

Appl. Phys. Lett. 48, 350 (1986); http://dx.doi.org/10.1063/1.96548 (3 pages) | Cited 14 times

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Using video recording equipment we are able to visualize and study both the melting and freezing interfaces in lamp zone melting recrystallization of silicon on insulator (SOI) films. A so‐called ‘‘explosive’’ melting has been observed, corresponding to a noncontinuous advance of the front. We also show the effectiveness of an etched pattern in the underlying SiO2 on the modulation of the solidification front. We thereby confirm the entrainment effect of this pattern. We observe then the effect of the scan speed on the liquid/solid interface morphology together with the entrainment efficiency.
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64.70.D- Solid-liquid transitions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.10.Fq Growth from melts; zone melting and refining
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda

Appl. Phys. Lett. 48, 353 (1986); http://dx.doi.org/10.1063/1.96549 (3 pages) | Cited 648 times

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Atmospheric pressure metalorganic vapor phase epitaxial growth and characterization of high quality GaN on sapphire (0001) substrates are reported. Using AlN buffer layers, GaN thin films with optically flat surfaces free from cracks are successfully grown. The narrowest x‐ray rocking curve from the (0006) plane is 2.70′ and from the (2024) plane is 1.86′. Photoluminescence spectra show strong near band edge emission. The growth condition dependence of crystalline quality is also studied.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
78.40.Fy Semiconductors
75.20.Ck Nonmetals

Lateral impurity transport in silicon films on insulators during laser recrystallization

K. Sugahara, T. Nishimura, Y. Akasaka, and H. Nakata

Appl. Phys. Lett. 48, 356 (1986); http://dx.doi.org/10.1063/1.96550 (3 pages) | Cited 3 times

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The lateral transport of dopants in silicon films on insulators during laser recrystallization is investigated. The dopants implanted locally in silicon films on insulators are found to be transported in the forward direction of the laser scan as well as the backward direction. Both transport lengths from the originally implanted region are measured as a function of the laser scan velocity. The transport mechanism is explained by taking into account a liquid phase diffusion and a segregation of impurities depending on the crystallization speed. The diffusion coefficients of (1.2±0.2)×10−4 and (1.3±0.4)×10−4 cm2/s for arsenic and boron, respectively, in molten silicon are obtained.
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66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
64.70.D- Solid-liquid transitions

Localized epitaxial growth of MnSi1.7 on silicon

Y. C. Lian and L. J. Chen

Appl. Phys. Lett. 48, 359 (1986); http://dx.doi.org/10.1063/1.96551 (3 pages) | Cited 34 times

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Epitaxial MnSi1.7 was grown locally on both (111) and (001)Si. The orientation relationships were found to be [110]MnSi1.7//[111]Si, (220)MnSi1.7//(220)Si and [001]MnSi1.7//[001]Si, (100)MnSi1.7//(400)Si for epitaxy grown on (111) and (001)Si samples, respectively. Three variants of epitaxy, required by the symmetry consideration, were also observed to form on (111)Si. Interfacial dislocations were identified to be of edge type with (1)/(6) 〈112〉 and 1/2 〈110〉 Burgers vectors for epitaxial MnSi1.7 grown on (111) and (001)Si, respectively. The presence of different forms of MnSi1.7 is suggested in view of the important difference in details of diffraction patterns of MnSi1.7 along the [001] direction. The growth of epitaxial MnSi1.7 on silicon has filled the ‘‘gap’’ of the growth of stable phases of silicides of the fourth period transition elements in the periodic table epitaxially on silicon.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Variable barrier height semiconductor/HxWO3 diodes

R. D. Rauh, T. L. Rose, and S. N. Benoit

Appl. Phys. Lett. 48, 362 (1986); http://dx.doi.org/10.1063/1.96552 (3 pages) | Cited 3 times

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Diodes of configuration HxWO3‖p‐ or n‐Si and HxWO3‖n‐CdS have been fabricated, where the effective work function of the HxWO3 can be varied reversibly by electrochemical hydrogen insertion/extraction. The diodes have a continuously variable barrier height, as indicated by their saturation photovoltage. These systems serve as prototypes for a class of chemically sensitive electronic devices.
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85.30.Hi Surface barrier, boundary, and point contact devices
73.30.+y Surface double layers, Schottky barriers, and work functions
82.45.-h Electrochemistry and electrophoresis
73.40.Mr Semiconductor-electrolyte contacts

Capacitance‐voltage and current‐voltage characteristics of molecular beam epitaxially grown p+‐GaAs/AlAs/n‐GaAs heterostructures

J. A. Cooper, Q‐D. Qian, and M. R. Melloch

Appl. Phys. Lett. 48, 365 (1986); http://dx.doi.org/10.1063/1.96553 (2 pages) | Cited 8 times

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We have studied the capacitance‐voltage (CV) and current‐voltage (IV) characteristics of molecular beam epitaxially (MBE) grown p+‐GaAs/AlAs/n‐GaAs heterostructures as a function of illumination level and temperature. Under illumination we find clear evidence of a hole inversion layer at the AlAs/n‐GaAs interface at 77 K, with a maximum inversion layer carrier concentration of about 4.1×1011 cm−2. The samples are essentially free of trapping in the AlAs, as indicated by the almost complete lack of hysteresis in the CV curves. At room temperature under steady‐state illumination we see both a voltage shift and a peak in the CV curves. The shift is attributed to the formation of an inversion layer, while the peak is believed due to the ac response of space charge flowing through the AlAs. In contrast to recent reports on similar samples grown by metalorganic chemical vapor deposition, the MBE grown samples appear to be suitable for fabricating field‐effect devices.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Ty Semiconductor-insulator-semiconductor structures

Measurement of the minority‐carrier lifetime and injection efficiency in AlGaAs/GaAs heterojunction bipolar transistors

Naresh Chand, Russ Fischer, Tim Henderson, Hadis Morkoç, and Arnost Neugroschel

Appl. Phys. Lett. 48, 367 (1986); http://dx.doi.org/10.1063/1.96554 (3 pages) | Cited 2 times

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To obtain an insight of the factors limiting the current gain, minority‐carrier lifetime (τn), base transport factor (αT), and emitter injection efficiency (γ) have been studied in npn AlGaAs/GaAs heterojunction bipolar transistors using a base width modulation technique. It is found that in addition to γ, αT is also a function of current injection level. At low injection αT increases at a fast rate with increasing injection. It is felt that, in addition to the surface recombination current at the periphery of the emitter‐base space‐charge region which affects γ, surface recombination of the minority carriers in the base of a mesa device is also important as it greatly reduces αT and hence the current gain.
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85.30.Pq Bipolar transistors
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Monolithic integration of GaAs light‐emitting diodes and Si metal‐oxide‐semiconductor field‐effect transistors

Ruby N. Ghosh, Bruce Griffing, and Joseph M. Ballantyne

Appl. Phys. Lett. 48, 370 (1986); http://dx.doi.org/10.1063/1.96555 (2 pages) | Cited 13 times

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A monolithic optoelectronic circuit, consisting of a GaAs light‐emitting diode (LED) driven by a Si metal‐oxide‐semiconductor (MOS) transistor, has been fabricated. Light output as a function of applied gate voltage was measured. The LED’s were fabricated in GaAs layers on Ge‐coated Si substrates containing MOS transistors. Normal transistor performance was observed after the GaAs LED fabrication, indicating that GaAs and Si processing technologies appear to be compatible.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.60.Jb Light-emitting devices
42.82.-m Integrated optics
85.30.Tv Field effect devices

Exciton formation and energy exchange with d‐electron states in ZnSe/(Zn,Mn)Se multiple quantum wells

Y. Hefetz, W. C. Goltsos, A. V. Nurmikko, L. A. Kolodziejski, and R. L. Gunshor

Appl. Phys. Lett. 48, 372 (1986); http://dx.doi.org/10.1063/1.96556 (3 pages) | Cited 19 times

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Time‐resolved photoluminescence at low temperatures has been studied in ZnSe/(Zn,Mn)Se multiple quantum wells and (Zn,Mn)Se thin films, with emphasis on determination of the exciton formation rate and the energy transfer to the Mn‐ion d‐electron states, the latter contributing to the dominant yellow luminescence in (Zn,Mn)Se. In the quantum well samples which show efficient exciton (blue) emission, the capture of electron‐hole pairs to the ZnSe layers on a picosecond timescale is sufficiently rapid to substantially reduce the yellow luminescence.
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71.35.-y Excitons and related phenomena
78.40.Fy Semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Preparation and electrical properties of InPxOy gate insulators on InP

H. L. Chang, L. G. Meiners, and C. J. Sa

Appl. Phys. Lett. 48, 375 (1986); http://dx.doi.org/10.1063/1.96557 (3 pages) | Cited 14 times

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See Also: Erratum

Show Abstract
A new insulating film, InPxOy, has been deposited in an indirect plasma‐enhanced low‐pressure chemical vapor deposition system for use as a gate dielectric layer on InP. In this system the oxygen is excited in an rf plasma chamber which is separated from the deposition chamber to avoid radiation damage to the InP surfaces. Triethylindium (TEI) and PH3 were used as sources for indium and phosphorus, respectively. A two‐zone furnace was employed in which PH3 was decomposed in the high‐temperature (800 °C) zone, whereas deposition was carried out in the low‐temperature (300 °C) zone. The electrical properties of the deposited films are dependent, to a large extent, upon the ratio of TEI vapor to PH3 during deposition. The resistivities range from 1013 to 1015 Ω cm. Fast interface state densities as determined from capacitance‐voltage (C‐V) measurements of layers deposited on n‐type InP substrates exhibit minima as low as 1010 cm−2 eV−1. The hysteresis in the high‐frequency C‐V curves was as low as 0.2 V, indicating that the densities of the slow states were reduced to a very low level due, probably, to the structural compatibility between the deposited layer and the InP substrates.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
FREE

Erratum: Laser enhanced metalorganic chemical vapor deposition crystal growth in GaAs [Appl. Phys. Lett. 47, 95 (1985)]

Yoshinobu Aoyagi, Satoshi Masuda, Susumu Namba, and Atsutoshi Doi

Appl. Phys. Lett. 48, 378 (1986); http://dx.doi.org/10.1063/1.97033 (1 page)

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Abstract Unavailable
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
82.50.-m Photochemistry
99.10.Cd Errata
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