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10 Feb 1986

Volume 48, Issue 6, pp. 381-447


Amplified spontaneous emission of F+3 color centers in a LiF crystal

Lixing Zheng, Shaozhang Guo, and Liangfeng Wan

Appl. Phys. Lett. 48, 381 (1986); http://dx.doi.org/10.1063/1.96558 (3 pages) | Cited 6 times

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This letter reports the observation of one‐ and two‐dimensional amplified spontaneous emission of F+3 color centers in a LiF crystal and a measurement of its optical gain coefficient.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
61.72.jn Color centers

Reduction of the spectral linewidth of semiconductor lasers with quantum wire effects—Spectral properties of GaAlAs double heterostructure lasers in high magnetic fields

Y. Arakawa, K. Vahala, A. Yariv, and K. Lau

Appl. Phys. Lett. 48, 384 (1986); http://dx.doi.org/10.1063/1.96559 (3 pages) | Cited 7 times

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The spectral linewidth of a GaAlAs double heterostructure laser placed in a high magnetic field is measured at 190 K. It is found that the power‐dependent spectral linewidth is reduced by a factor of 0.6 in a magnetic field of 19 T. This reduction is believed to result mainly from the reduction of the linewidth enhancement factor α due to a quasi‐one‐dimensional electronic system formed by the high magnetic field (i.e., by quantum wire effects).
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes

Picosecond transient grating studies of polymeric thin films

D. Narayana Rao, Ryszard Burzynski, Xin Mi, and Paras N. Prasad

Appl. Phys. Lett. 48, 387 (1986); http://dx.doi.org/10.1063/1.96560 (3 pages) | Cited 1 time

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Picosecond transient grating experiments have been performed on a 5‐μm‐thick polystyrene film doped with naphthalene and on a 700‐μm‐thick pure polystyrene film at room temperature. In both cases, the observed acoustic modulation of the diffracted signal is explained by the formation of a thermal grating. No detectable acoustic attenuation is observed within the time delay of 6 ns, and the speed of sound obtained from the acoustic modulation period is in excellent agreement with that reported by an ultrasonic measurement. The coherent third order nonlinear electronic response observed at zero‐time delay is found to be shorter than 2 ps.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Dj Gratings
68.60.Bs Mechanical and acoustical properties

Structural properties of graphitized poly‐peri‐naphthalene whiskers

Mutsuaki Murakami, Susumu Yoshimura, and Sumio Iijima

Appl. Phys. Lett. 48, 390 (1986); http://dx.doi.org/10.1063/1.96561 (3 pages) | Cited 10 times

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The poly‐peri‐naphthalene (PPN) whisker is a typical graphitizing carbonaceous material. Graphitized PPN consists of linear graphite chains oriented perpendicular to the direction of the whisker axis and folded at the whisker edges. The formation of such a unique whisker structure can be explained from the original structure of the PPN whisker.
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68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
81.40.Gh Other heat and thermomechanical treatments

Study of banded structure in polymer spherulites by polarized micro‐Raman spectroscopy

Hajime Tanaka, Teruki Ikeda, and Toshio Nishi

Appl. Phys. Lett. 48, 393 (1986); http://dx.doi.org/10.1063/1.96562 (3 pages) | Cited 10 times

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Polarized micro‐Raman spectroscopy has been used to study polymer blends of poly (ϵ‐caprolactone), poly (vinyl methyl ether), and poly(styrene) for the first time. The banded pattern is attributed to the twist of the lamellae from microscopic (vibrational spectroscopic) measurements on the orientation of the lamellae. Polarized micro‐Raman spectroscopy is shown to be a powerful method for studying high order structures of polymers on the molecular level.
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61.41.+e Polymers, elastomers, and plastics
78.30.-j Infrared and Raman spectra

Characterization study of a HgTe‐CdTe superlattice by means of transmission electron microscopy and infrared photoluminescence

K. A. Harris, S. Hwang, D. K. Blanks, J. W. Cook, J. F. Schetzina, N. Otsuka, J. P. Baukus, and A. T. Hunter

Appl. Phys. Lett. 48, 396 (1986); http://dx.doi.org/10.1063/1.96563 (3 pages) | Cited 25 times

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We report the first transmission electron microscopy (TEM) study of a HgTe‐CdTe superlattice. The superlattice consists of 250 layer pairs of HgTe‐CdTe on a (100) CdTe substrate and was grown at 175 °C by molecular beam epitaxy. Vertical cross‐section TEM images show a highly regular structure of the superlattice from the CdTe substrate to the free surface, indicating that interdiffusion effects at interfaces are minimal. Diffraction patterns taken from the first 30 pairs of layers of the superlattice from the CdTe buffer layer show a series of satellite spots up to the sixth order. This implies that the interfacial sharpness of this HgTe‐CdTe superlattice is comparable to those interfaces of high quality III‐V semiconductor superlattices. The HgTe‐CdTe superlattice exhibits an infrared photoluminescence peak at 357 meV, in reasonable agreement with theoretical predictions of its band gap.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.40.Fy Semiconductors
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Compensation of grain growth enhancement in doped silicon films

H.‐J. Kim and C. V. Thompson

Appl. Phys. Lett. 48, 399 (1986); http://dx.doi.org/10.1063/1.96510 (3 pages) | Cited 19 times

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In thin films (1140 Å) of silicon doped with phosphorus, secondary or abnormal grain growth leads to bimodal grain size distributions and eventually to grains much larger than (≳25×) the film thickness. The resulting grains have nonrandom texture and are thought to be the result of surface‐energy‐driven secondary grain growth. The rate of secondary and normal grain growth increases with increasing P content. This rate increase is thought to be due to an increase in the grain boundary mobility. The rate of normal grain growth is unchanged or slightly increased when films are doped with boron. The secondary grain boundary mobility enhancement that occurs due to P doping can be compensated (reduced or eliminated) when films are co‐doped with B.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Structure and composition of NixGaAs

T. Sands, V. G. Keramidas, J. Washburn, and R. Gronsky

Appl. Phys. Lett. 48, 402 (1986); http://dx.doi.org/10.1063/1.96511 (3 pages) | Cited 69 times

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Advanced compound semiconductor devices require increasingly stable, shallow, and uniform metallized layers for ohmic and Schottky contacts. However, the design of new multielemental contact metallization systems is limited by the paucity of information regarding the structure, composition, and stability of phases resulting from the interaction of single metal layers with compound semiconductors. In this letter, the results of a transmission electron microscopy investigation of the Ni/GaAs reaction are presented. The first reaction product is shown to have the composition Ni3GaAs. Based on this composition and lattice parameter measurements, it is proposed that the structure of Ni3GaAs is closely related to that of γ′ Ni3Ga2, a derivative of the hexagonal B8 structure type.
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68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Surface‐limited release of deuterium from iron and the effect of surface oxygen

W. R. Wampler

Appl. Phys. Lett. 48, 405 (1986); http://dx.doi.org/10.1063/1.96512 (3 pages) | Cited 15 times

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The surface‐limited release of deuterium from solution in polycrystalline iron was measured in ultrahigh vacuum using nuclear reaction analysis and ion implantation with surface characterization by Auger electron spectroscopy. For a bare iron surface the magnitude and temperature dependence of the release rate are quantitatively predicted by a model in which the rate limiting step is the recombination and desorption of deuterium chemisorbed on the surface. The release rate decreased approximately linearly with oxygen coverage up to a cutoff at about 0.4 monolayer.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.05.Bx Metals, semimetals, and alloys
68.35.Dv Composition, segregation; defects and impurities

Schottky barrier formation on electron beam deposited amorphous Si1−xGex@B:H alloys and amorphous (Si/Si1−xGex)@B:H modulated structures

A. Christou, P. Tzanetakis, Z. Hatzopoulos, G. Kyriakidis, W. Tseng, and B. R. Wilkins

Appl. Phys. Lett. 48, 408 (1986); http://dx.doi.org/10.1063/1.96513 (3 pages) | Cited 1 time

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Amorphous Si:H and Si1−xGex:H films were prepared by mixing electron beam evaporated silicon with a molecular beam of germanium from a Knudsen cell and with a beam of ionized hydrogen produced by a 0–3 keV ion source. Aluminum Schottky barriers on two types of samples of (1) amorphous Si1−xGex:H with 0.15<x<0.85 and (2) modulated structures of 50×100 Å layers of amorphous Si:H/a‐Si0.8Ge0.2:H (10−5 Torr PH hydrogen) were investigated. Barrier height was found to depend on the Ge concentration and possible Fermi level pinning due to the dangling bond deep level. The modulated structures showed a negative resistance region and a barrier height determined only by the composition of the first layer.
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73.30.+y Surface double layers, Schottky barriers, and work functions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Ns Metal-nonmetal contacts

Ion channeling effect of In dopant in semi‐insulating GaAs

K. Kuriyama, M. Satoh, and C. Kim

Appl. Phys. Lett. 48, 411 (1986); http://dx.doi.org/10.1063/1.96514 (2 pages) | Cited 15 times

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The channeling phenomena of undoped and In‐doped semi‐insulating GaAs grown by the liquid encapsulated Czochralski method have been analyzed by 1.5 MeV 4He+beam. It is suggested that the minimum yield of backscattering particles is affected by the local lattice distortion due to the addition of large amounts of In atoms rather than the difference in dislocation density. It is also indicated that the In atoms of ∼1020/cm3 doped in GaAs occupy substitutional sites within the statistical errors.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
78.40.Fy Semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.U- Doping and impurity implantation

Room‐temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

Shiro Sakai, Tetsuo Soga, Masanari Takeyasu, and Masayoshi Umeno

Appl. Phys. Lett. 48, 413 (1986); http://dx.doi.org/10.1063/1.96515 (2 pages) | Cited 42 times

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AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown by metalorganic chemical vapor deposition. A threshold current density at 16.5 °C and a characteristic temperature T0 of 4.9 kA/cm2 and 179 K respectively have been obtained for the diode on Si substrate.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.60.Gz Photodetectors (including infrared and CCD detectors)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Fabrication of GaAs tunnel junctions by a rapid thermal diffusion process

S. K. Ghandhi, R. T. Huang, and J. M. Borrego

Appl. Phys. Lett. 48, 415 (1986); http://dx.doi.org/10.1063/1.97012 (2 pages) | Cited 21 times

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A rapid thermal diffusion process for the fabrication of GaAs tunnel junctions, utilizing a doped oxide zinc source and a protective cap layer of phosphosilicate glass, is described in this letter. It is shown that tunnel junctions fabricated by this open tube process are suited for low impedance interconnects in tandem solar cells, and also for tunnel diode field‐effect transistor logic applications. The resulting voltage‐current characteristics in both silicon and sulfur doped n+ epilayers, and the peak current as a function of effective doping concentration, are also presented. It is shown that diodes made by this process are comparable in electrical properties to those made by molecular beam epitaxy.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

High performance HgCdTe photoconductive devices grown by metalorganic chemical vapor deposition

L. T. Specht, W. E. Hoke, S. Oguz, P. J. Lemonias, V. G. Kreismanis, and R. Korenstein

Appl. Phys. Lett. 48, 417 (1986); http://dx.doi.org/10.1063/1.96516 (2 pages) | Cited 9 times

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Photoconductive detector arrays fabricated from metalorganic chemical vapor deposited epitaxial films of Hg0.8Cd0.2Te on both CdTe and Al2O3 substrates are reported for the first time. These devices operate in the 8–12‐μm spectral region and have detectivities of 3.6×1010 and 2.6×1010 cm Hz1/2/W for CdTe and Al2O3 substrates, respectively. These results approach background limited performance, and as such establish the feasibility of metalorganic chemical vapor deposited HgCdTe for use in advanced infrared detection systems.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.De Semiconductor-device characterization, design, and modeling

GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy

M. J. Cherng, G. B. Stringfellow, D. W. Kisker, A. K. Srivastava, and J. L. Zyskind

Appl. Phys. Lett. 48, 419 (1986); http://dx.doi.org/10.1063/1.96517 (3 pages) | Cited 32 times

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Ga1−xInxAs1−ySby alloys have been grown by organometallic vapor phase epitaxy using trimethyl compounds of Ga, In, As, and Sb(TMGa, TMIn, TMAs, and TMSb) plus AsH3 in an atmospheric pressure, horizontal, infrared heated reactor. For the first time, alloys near the center of the region of solid immiscibility have been grown. Alloys with room‐temperature band gaps of 0.45 eV (Ga0.68In0.32As0.28Sb0.72) and 0.37 eV (Ga0.26In0.74As0.76Sb0.24) have been grown on GaSb substrates and alloys with larger band gaps (0.74 eV for Ga0.71In0.29As0.76Sb0.24) have been grown on InP substrates. The smaller band‐gap alloys are grown at temperatures as low as 486 °C. The alloys on InP substrates are grown at higher temperatures of 600 °C, more typical of the GaAsSb and GaInAs alloys reported earlier. Solid composition was determined using energy dispersive x‐ray analysis and combined x‐ray diffraction and photoluminescence measurements. The low‐temperature photoluminescence of these metastable alloys consists of a single, presumably band edge peak. The half‐widths of the photoluminescence peaks, especially those near the center of the region of immiscibility, are broader than those for the metastable ternary alloy GaAsSb. This may indicate that a significant amount of compositional clustering occurs during growth.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.40.Fy Semiconductors
68.55.Nq Composition and phase identification
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Experimental study of the frequency limits of a resonant tunneling oscillator

Paul D. Coleman, Steven Goedeke, Thomas J. Shewchuk, Peter C. Chapin, Joseph M. Gering, and Hadis Morkoç

Appl. Phys. Lett. 48, 422 (1986); http://dx.doi.org/10.1063/1.96518 (3 pages) | Cited 8 times

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An equivalent circuit obtained from microwave impedance and power data is proposed for a resonant tunneling diode. The four‐element circuit consists of a series R and C in parallel with a nonlinear negative differential conductance −G, the combination in turn in series with a resistor r. The resistive cut‐off frequency predicted by this model depends on both the RC and RG products. Detection at THz frequencies is also explained by the model.
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73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling

Picosecond studies of electron confinement in simple colored glasses

J. Warnock and D. D. Awschalom

Appl. Phys. Lett. 48, 425 (1986); http://dx.doi.org/10.1063/1.96519 (3 pages) | Cited 45 times

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Time‐resolved optical measurements at low temperatures reveal finite size effects for excitons trapped in semiconductor microcrystallites embedded in a simple borosilicate glass. The excitation lifetimes are significantly shorter than those in comparable bulk material, with a marked dependence on crystallite size. The results are interpreted as an effect of three‐dimensional confinement with ‘‘box’’ dimensions comparable to the exciton diameter.
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71.23.An Theories and models; localized states
71.35.-y Excitons and related phenomena
78.55.Hx Other solid inorganic materials
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Effect of impurity trapping on the capacitance‐voltage characteristics of n‐GaAs/N‐AlGaAs heterojunctions

K. L. Tan, M. S. Lundstrom, and M. R. Melloch

Appl. Phys. Lett. 48, 428 (1986); http://dx.doi.org/10.1063/1.96520 (3 pages) | Cited 10 times

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We have studied the capacitance‐voltage (C‐V) characteristics of Schottky barriers on inverted n‐GaAs/N‐AlGaAs and normal N‐AlGaAs/n‐GaAs heterojunctions. Impurities introduced during film growth produced a negative sheet charge of 6.0×1011 cm−2 at the interface of the inverted n‐GaAs/N‐AlGaAs heterojunction. The effectiveness of GaAs quantum wells in trapping these impurities was investigated. GaAs quantum wells 20 Å wide were placed in intervals of 2500 Å for the first 0.75 μm of the AlGaAs layer; in the last 0.25 μm, the periodicity of the quantum wells was progressively decreased by half with the last quantum well placed at about 160 Å from the GaAs/AlGaAs interface. The resulting measured interface charge concentration of 4.4×1010 cm−2 is more than a magnitude lower than measured before the use of the quantum wells and is essentially at the limit of the accuracy of the C‐V technique for this structure.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.40.Fy Semiconductors

Measurement of the low‐field electron mobility and compensation ratio profiles in GaAs field‐effect transistors

P. A. Folkes

Appl. Phys. Lett. 48, 431 (1986); http://dx.doi.org/10.1063/1.96521 (3 pages) | Cited 14 times

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A novel technique for measuring the low‐field electron mobility as a function of depth into the active layer of a nonuniformly doped GaAs Schottky barrier field‐effect transistor (MESFET) has been developed. This technique is based on measurements of the current‐voltage characteristics and the transconductance under low‐field conditions as well as capacitance‐voltage measurements. By comparison of the measured electron mobility with previous theoretical results the compensation ratio profile can be determined. Measurements on ion‐implanted and epitaxial GaAs MESFET’s show that, for depths >0.1 μm, the nonuniform mobility profile is correlated with the donor density profile and sensitive to the compensation ratio, indicating that ionized impurity scattering is important over the range of carrier densities typically used in these devices.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Dp General theory, scattering mechanisms
85.30.Tv Field effect devices

A new method for solving the ground‐state problem in arbitrary quantum wells: Application to electron‐hole quasi‐bound levels in quantum wells under high electric field

Jasprit Singh

Appl. Phys. Lett. 48, 434 (1986); http://dx.doi.org/10.1063/1.96522 (3 pages) | Cited 24 times

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A method based on the Monte Carlo technique and variational principle is developed to study the ground‐state problem in arbitrary quantum wells. A technique is described to use this method to study quasi‐bound states in systems. The method is applied to AlGaAs/GaAs quantum wells subjected to high electric fields. Advantages of this approach over the conventional variational approach are identified.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.10.-w Theories and models of many-electron systems

Formation of GdSi2 under UHV evaporation and in situ annealing

H. V. Suu, G. Petõ, G. Mezey, F. Pászti, E. Kótai, M. Fried, A. Manuaba, E. Zsoldos, and J. Gyulai

Appl. Phys. Lett. 48, 437 (1986); http://dx.doi.org/10.1063/1.96523 (2 pages) | Cited 8 times

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GdSi2 was prepared under ultrahigh vacuum conditions. Prior to processing, a clean interface was produced using diluted HF dipping. It is pointed out that the ‘‘critical temperature’’ for formation published earlier is probably an artifact and correlation between the interface native oxide and the critical temperature is established.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Influence of oxide thickness on the transport properties of silicon metal‐oxide‐semiconductor systems

A. Gold

Appl. Phys. Lett. 48, 439 (1986); http://dx.doi.org/10.1063/1.96524 (3 pages) | Cited 5 times

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We calculate the effects of a finite oxide thickness on the transport properties of a two‐dimensional interacting electron gas in a metal‐oxide‐semiconductor system at temperature zero. Due to the image potential the electron‐impurity interaction and the electron‐electron interaction are reduced in comparison to an infinite oxide thickness. For impurity scattering the mobility increases with decreasing oxide thickness d. For surface roughness scattering the opposite effect is found. The thickness effects become relevant for 2kFd≤1 and kF is the Fermi wave number. The influence on the metal insulator phase diagram is also evaluated.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
71.30.+h Metal-insulator transitions and other electronic transitions
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Hydrogen absorption and desorption in Nd2Fe14B

J. M. Cadogan and J. M. D. Coey

Appl. Phys. Lett. 48, 442 (1986); http://dx.doi.org/10.1063/1.96525 (3 pages) | Cited 36 times

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Absorption and desorption of hydrogen by the permanent magnet material Nd2Fe14B have been studied using a microcomputer‐controlled, thermomanometric analyzer with an initial hydrogen pressure of approximately 1 bar. Primary absorption occurs in the range 200–300 °C and results in the formation of a stable hydride with increased lattice parameters and Curie temperature. Subsequent hydrogen desorption, which is virtually complete by 650 °C, leaves the sample in an intermediate state. A second absorption step at about 720 °C corresponds to disproportionation of the Nd2Fe14B phase into α‐Fe, Fe2B, and NdH2. Desorption of hydrogen from a hydrogenated sample heated in vacuum is maximum at 300 °C.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
81.65.-b Surface treatments
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.20.-n Methods of materials synthesis and materials processing

Nanosecond photoacoustic studies on ultraviolet laser ablation of organic polymers

P. E. Dyer and R. Srinivasan

Appl. Phys. Lett. 48, 445 (1986); http://dx.doi.org/10.1063/1.96526 (3 pages) | Cited 110 times

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Wide bandwidth polyvinylidenefluoride film piezoelectric transducers have been used to make time‐resolved measurements of stress waves generated by ablation and subthreshold thermoelastic mechanisms in excimer laser irradiated polymers. At high fluence, ablation commences within 4–6 ns of the start of the laser pulse and generates short acoustic impulses (∼20 ns) with peak stresses ≥107 Pa (∼100 atm).
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79.20.Ds Laser-beam impact phenomena
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
62.30.+d Mechanical and elastic waves; vibrations
65.40.De Thermal expansion; thermomechanical effects
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