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17 Feb 1986

Volume 48, Issue 7, pp. 451-501


Franz–Keldysh electrorefraction and electroabsorption in bulk InP and GaAs

T. E. Van Eck, L. M. Walpita, W. S. C. Chang, and H. H. Wieder

Appl. Phys. Lett. 48, 451 (1986); http://dx.doi.org/10.1063/1.96527 (3 pages) | Cited 27 times

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Franz–Keldysh electrorefraction and electroabsorption were measured for semi‐insulating InP and GaAs at several electric fields and several wavelengths near the absorption edge. For InP, the experimental results are described well by an effective mass approximation theory with a correction that accounts for the exponential absorption tail. It is shown that, at least in InP, Franz–Keldysh electrorefraction is under some conditions much stronger than the Pockels effect.
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78.20.Jq Electro-optical effects
42.79.Hp Optical processors, correlators, and modulators
42.70.-a Optical materials

Optically pumped laser oscillation in the 1.6–1.8 μm region from Al0.4Ga0.6Sb/GaSb/Al0.4Ga0.6Sb double heterostructures grown by molecular beam heteroepitaxy on Si

J. P. van der Ziel, R. J. Malik, J. F. Walker, and R. M. Mikulyak

Appl. Phys. Lett. 48, 454 (1986); http://dx.doi.org/10.1063/1.96528 (3 pages) | Cited 12 times

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Double heterostructures consisting of GaSb active layers with Al0.4Ga0.6Sb cladding layers were grown by molecular beam heteroepitaxy on Si substrates. The intrinsic ∼12% lattice mismatch between the GaSb and the Si at the growth temperature is largely taken up by a GaSb/AlSb superlattice. The larger thermal contraction of the GaSb layer relative to that of Si causes the GaSb layer to be under severe dilatory strain relative to the Si substrate at room temperature. Optically pumped laser emission ranging from 1.62 μm at 80 K to 1.82 μm at 350 K was observed. The threshold varied somewhat nonexponentially with temperature, with a change in slope at ∼250 K. The exponential threshold‐temperature dependences at 80 and 300 K are T0=158 and 100 K, respectively, and are higher than previously reported for GaSb lasers. At 300 K the threshold corresponds to an effective current of 12 kA/cm2.
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42.55.Px Semiconductor lasers; laser diodes
42.55.-f Lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Linewidth of distributed feedback semiconductor lasers with partially reflecting facets

Govind P. Agrawal, N. K. Dutta, and P. J. Anthony

Appl. Phys. Lett. 48, 457 (1986); http://dx.doi.org/10.1063/1.96529 (3 pages) | Cited 3 times

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The linewidth of distributed feedback semiconductor lasers with partially reflecting facets is analyzed theoretically to study its dependence on the grating phases at the facets. For most phase combinations, the linewidth is found to be reduced compared to its value expected in the absence of grating, i.e., the value expected for a similar Fabry–Perot laser. The extent of reduction increases with the coupling coefficient κ. The calculated results are in qualitative agreement with the recent observations on phase tunable distributed feedback lasers.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes

Picosecond optical mixing in fast photodetectors

T. F. Carruthers and J. F. Weller

Appl. Phys. Lett. 48, 460 (1986); http://dx.doi.org/10.1063/1.96530 (3 pages) | Cited 16 times

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We report a simple optical correlation technique which is capable of measuring the intrinsic response speeds of fast photosensitive electronic devices. The appeal of the method is that neither high‐speed electrical connections to a device nor cross‐correlation measurements between two devices are required. An example is given of measurements of the response speed of a GaAs Schottky barrier photodiode. Under appropriate illumination conditions the detector is found to be sufficiently fast to be capable of replacing optical second harmonic generation techniques for monitoring the quality of a beam of 1.5 ps pulses.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
85.60.Dw Photodiodes; phototransistors; photoresistors

Growth of an epitaxial insulator‐metal‐semiconductor structure on Si by molecular beam epitaxy

Julia M. Phillips and W. M. Augustyniak

Appl. Phys. Lett. 48, 463 (1986); http://dx.doi.org/10.1063/1.96531 (3 pages) | Cited 20 times

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We report the first successful growth of an epitaxial insulator‐metal‐semiconductor structure. The substrate is Si (111), on which a layer of CoSi2 followed by a layer of CaF2 have been grown by molecular beam epitaxy. The epitaxy of the top CaF2 layer improves upon rapid thermal annealing. The epitaxial relations of the two overlayers with respect to the substrate have been determined. The lattice of the CoSi2 is rotated 180° with respect to the Si lattice, while the CaF2 is aligned with the Si lattice. This work demonstrates that it is possible to combine these materials in a single heteroepitaxial structure and may have important applications in three‐dimensional integration.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Fx Diffusion; interface formation
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Epitaxial growth of rare‐earth silicides on (111) Si

J. A. Knapp and S. T. Picraux

Appl. Phys. Lett. 48, 466 (1986); http://dx.doi.org/10.1063/1.96532 (3 pages) | Cited 155 times

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Rapid heating with an electron beam has been used to react overlayers of rare‐earth (RE) metals with (111) Si, forming epitaxial layers of silicides of Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. Under conventional furnace annealing, forming such silicides on Si typically leads to rough, pitted surfaces. The use of fast beam heating not only results in a much smoother surface topology but also helps promote epitaxial growth on (111) Si in both solid and liquid phase reactions. These epitaxial silicides have a hexagonal RESi∼1.7 structure (defected AlB2 type). Their orientation with the Si substrate is (0001)∥(111), with predicted lattice mismatches ranging from +0.83 to −2.55%.
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81.15.Np Solid phase epitaxy; growth from solid phases
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.-a Thin film structure and morphology
79.20.Kz Other electron-impact emission phenomena

Temperature dependence and hysteresis of Young’s modulus in a graphite/aluminum metal matrix composite

John M. Liu

Appl. Phys. Lett. 48, 469 (1986); http://dx.doi.org/10.1063/1.96533 (3 pages) | Cited 4 times

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Some unusual behavior in the temperature dependence of the Young’s modulus along the direction of the reinforcing graphite fibers in a graphite/aluminum composite has been observed. The decrease of the Young’s modulus with decreasing temperature as measured by ultrasonic techniques, utilizing noncontacting electromagnetic acoustic transducers, is shown to be due to the strong dependence of the fiber modulus on stress, which existed as a result of the mismatch between the coefficients of thermal expansion for the fiber and the matrix. Results appear significant in the selection of suitable combination of fibers and matrices for achieving thermally stable composites.
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62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations

Evidence for amphoteric behavior of Ru on CdTe surfaces

D. N. Bose, S. Basu, K. C. Mandal, and D. Mazumdar

Appl. Phys. Lett. 48, 472 (1986); http://dx.doi.org/10.1063/1.96534 (3 pages) | Cited 9 times

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Modification of large grain p‐CdTe by Ru is shown to reduce the sub‐band‐gap response and increase minority‐carrier diffusion length from 0.67 to 0.92 μm. Contact potential difference (CPD) measurements on n‐ and p‐CdTe show shifts in surface Fermi level in opposite directions corresponding to increase in barrier height in each case. The amphoteric nature of Ru on CdTe surfaces depending on conductivity type is thus inferred. The magnitudes of the changes in CPD are approximately equal to the increase of open circuit voltage Voc observed in photoelectro‐chemical cells.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.-r Electron states at surfaces and interfaces
72.40.+w Photoconduction and photovoltaic effects
82.47.-a Applied electrochemistry

Unpinned (100) GaAs surfaces in air using photochemistry

S. D. Offsey, J. M. Woodall, A. C. Warren, P. D. Kirchner, T. I. Chappell, and G. D. Pettit

Appl. Phys. Lett. 48, 475 (1986); http://dx.doi.org/10.1063/1.96535 (3 pages) | Cited 104 times

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We have unpinned the Fermi level at the surface of both n‐ and p‐type (100) GaAs in air. Light‐induced photochemistry between GaAs and water unpins the surface Fermi level by reducing the surface state density. Excitation photoluminescence spectroscopy shows a substantial decrease in both surface band bending and surface recombination velocity in treated samples, consistent with a greatly reduced surface state density (≂1011 cm−2). Capacitance‐voltage measurements on metal‐insulator‐semiconductor structures corroborate this reduction in surface state density and show that the band bending may be controlled externally, indicating an unpinned Fermi level at the insulator/GaAs interface. We discuss a possible unpinning mechanism.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
82.50.Hp Processes caused by visible and UV light
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Sequential resonant tunneling through a multiquantum well superlattice

Federico Capasso, Khalid Mohammed, and Alfred Y. Cho

Appl. Phys. Lett. 48, 478 (1986); http://dx.doi.org/10.1063/1.97007 (3 pages) | Cited 160 times

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We report the observation of two negative conductance regions in the low‐temperature photocurrent‐voltage characteristic of tight‐binding multiquantum well (35 periods) 1‐μm‐thick Al0.48 In0.52As/ Ga0.47 In0.53As superlattices grown by molecular beam epitaxy. The two peaks occur at voltages corresponding to a potential energy drop across the superlattice period equal to the energy differences between the first two excited states and the ground state of the quantum wells. This provides direct evidence of sequential resonant tunneling between the ground and excited states of adjacent wells alternated with intrawell energy relaxation.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling

Stabilization of InP substrate under annealing in the presence of GaAs

M. Sacilotti, R. A. Masut, and A. P. Roth

Appl. Phys. Lett. 48, 481 (1986); http://dx.doi.org/10.1063/1.96536 (3 pages) | Cited 3 times

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We report on the annealing of InP and GaAs substrates, placed side by side, in a hydrogen atmosphere. This annealing is done with and without arsine, and also in the presence of elemental arsenic replacing GaAs. This simple technique shows the stabilization of InP by the presence of GaAs in a temperature range between 550 and 750 °C. It gives information about active species present during substrate annealing. The results obtained show that the protecting species of column V elements, dimers or tetramers, behave differently than the ones resulting from the decomposition of the V hydride.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
68.35.Fx Diffusion; interface formation
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Pnp GaAs/Ge/Ge phototransistor grown by molecular beam epitaxy: Implications for bipolar and hot‐electron transistors

N. Chand, J. Klem, and H. Morkoç

Appl. Phys. Lett. 48, 484 (1986); http://dx.doi.org/10.1063/1.96483 (3 pages) | Cited 17 times

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In order to exploit the potential of GaAs/Ge heterojunctions for high‐speed heterojunction bipolar transistors and hot‐electron transistors, a Pnp GaAs/Ge floating base phototransistor, sensitive to 1.1–1.55‐μm wavelength range, was made. The gallium‐doped Ge substrate was first exposed to the As2 flux in the growth chamber of a molecular beam epitaxy system to form a pn junction in Ge. This was followed by the growth of a p‐type Be‐doped GaAs layer which served as the emitter. The fabricated mesa devices showed an optical gain of 85 at 1.15 μm incident wavelength. The gain was found to be nearly independent of the incident light power indicating good quality of the GaAs/Ge heterointerface.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Pq Bipolar transistors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Proposed structure for large quantum interference effects

S. Datta, M. R. Melloch, S. Bandyopadhyay, and M. S. Lundstrom

Appl. Phys. Lett. 48, 487 (1986); http://dx.doi.org/10.1063/1.96484 (3 pages) | Cited 68 times

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In this letter we propose and analyze a new semiconductor structure that can be fabricated by present day technology and can lead to large quantum interference effects with potential device applications.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Surface defect segregation in the perovskite‐type ferroelectric KNbO3

K. Szot, F. U. Hillebrecht, D. D. Sarma, M. Campagna, and H. Arend

Appl. Phys. Lett. 48, 490 (1986); http://dx.doi.org/10.1063/1.96485 (3 pages) | Cited 12 times

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Electron spectroscopic investigations are used to show that defects at various concentrations are inherently present on surfaces of KNbO3 crystals. Their concentration at the surface is determined by the bulk concentration as well as by diffusion. These defects are important for most classical measurements on KNbO3 and similar materials.
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68.35.Dv Composition, segregation; defects and impurities
68.35.Fx Diffusion; interface formation
81.65.-b Surface treatments

UV laser deposition of metal films by photogenerated free radicals

R. K. Montgomery and T. D. Mantei

Appl. Phys. Lett. 48, 493 (1986); http://dx.doi.org/10.1063/1.96486 (3 pages) | Cited 9 times

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Silver, copper, and palladium films have been deposited by UV laser‐induced reduction of metal ions in solution. Metal lines have been written and metal pattern generation by projection imaging has been demonstrated.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.50.-m Photochemistry
81.05.Bx Metals, semimetals, and alloys

Waveguiding effects in laser‐induced aqueous etching of semiconductors

Dragan V. Podlesnik, Heinz H. Gilgen, and Richard M. Osgood

Appl. Phys. Lett. 48, 496 (1986); http://dx.doi.org/10.1063/1.96487 (3 pages) | Cited 32 times

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The rapid, ultraviolet‐induced aqueous etching produces vertical, high‐aspect features in GaAs samples of different crystal orientations. Much of the speed and anisotropy of the etching is attributed to the formation of efficient hollow, optical waveguides. These guides have been characterized by measuring the optical loss and the field distribution within the guide. The optical loss is typically small and does not restrict the etching of deep features.
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81.65.-b Surface treatments
42.79.Gn Optical waveguides and couplers

Use of infrared fibers for low‐temperature radiometric measurements

A. Zur and A. Katzir

Appl. Phys. Lett. 48, 499 (1986); http://dx.doi.org/10.1063/1.96488 (2 pages) | Cited 31 times

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Silver halide (AgClxBr1−x) infrared fibers were incorporated in a simple radiometer. Using this system we performed noncontact temperature measurements in the range 25–50 °C. Good correlation was found between the radiometric results and those obtained with a regular thermocouple. The minimum resolvable temperature difference was 0.1 °C and the spatial resolution was 0.9 mm.
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07.60.Dq Photometers, radiometers, and colorimeters
07.20.Dt Thermometers
42.81.Wg Other fiber-optical devices
FREE

Erratum: Optical nonlinearity resulting from mobile carriers in semiconductor superlattices: Influence of higher minibands [Appl. Phys. Lett. 47, 1260 (1985)]

C. M. de Sterke and D. G. Hall

Appl. Phys. Lett. 48, 501 (1986); http://dx.doi.org/10.1063/1.97034 (1 page)

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Abstract Unavailable
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42.65.-k Nonlinear optics
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
99.10.Cd Errata
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