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3 Mar 1986

Volume 48, Issue 9, pp. 557-609


Continuous wave operation (77 K) of yellow (583.6 nm) emitting AlGaInP double heterostructure laser diodes

Isao Hino, Seiji Kawata, Akiko Gomyo, Kenichi Kobayashi, and Tohru Suzuki

Appl. Phys. Lett. 48, 557 (1986); http://dx.doi.org/10.1063/1.96505 (2 pages) | Cited 14 times

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Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm2). Magnesium was adopted as a p‐type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission

Novel Landau level laser in the quantum Hall regime

H. Aoki

Appl. Phys. Lett. 48, 559 (1986); http://dx.doi.org/10.1063/1.96506 (2 pages) | Cited 9 times

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A novel laser is proposed for the two‐dimensional electrons in semiconductor heterostructures in strong magnetic fields. The laser operates under the two‐dimensional Landau quantization with population inversion in the Landau levels. The laser frequency, which is directly tunable by the magnitude of the external magnetic field (H), falls on the far infrared for H∼1 T.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.20.Ls Magneto-optical effects
42.60.Fc Modulation, tuning, and mode locking

Active Q switching in a GaAs/AlGaAs multiquantum well laser with an intracavity monolithic loss modulator

Y. Arakawa, A. Larsson, J. Paslaski, and A. Yariv

Appl. Phys. Lett. 48, 561 (1986); http://dx.doi.org/10.1063/1.96507 (3 pages) | Cited 15 times

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Active Q switching in a GaAs/AlGaAs multiquantum well laser with an intracavity electroabsorption monolithic loss modulator is demonstrated. In this device, an efficient loss modulation is achieved through the quantum confined Stark effect in a modulator section and the enhanced carrier induced band shrinkage effect in an optical amplifier section. It is found that a picosecond pulse as narrow as 18.6 ps full width at half‐maximum is generated and a high repetition rate of more than 3 GHz is obtained.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

One‐way, real time wave front converters

Sze‐Keung Kwong and Amnon Yariv

Appl. Phys. Lett. 48, 564 (1986); http://dx.doi.org/10.1063/1.96508 (3 pages) | Cited 9 times

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Optical one‐way, real time wave front cleanup by means of photorefractively pumped oscillators is reported. A factor of 4000 increase in beam brightness has been achieved.
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07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems
42.65.-k Nonlinear optics
42.25.Dd Wave propagation in random media
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Tunable optical filters, modulators, and limiters using Stark‐induced birefringence and dichroism

David M. Pepper and M. B. Klein

Appl. Phys. Lett. 48, 567 (1986); http://dx.doi.org/10.1063/1.96509 (3 pages)

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Novel electro‐optic devices using the polarization‐, intensity‐, and frequency‐dependent susceptibility of Stark‐active gases have been analyzed and demonstrated, including all‐optical limiter/cut‐off devices, amplitude modulators, and tunable narrowband filters. The application of the system to other media (e.g., multiple quantum wells) and to the study of coherent optical transients is discussed.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Hp Optical processors, correlators, and modulators
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
33.55.+b Optical activity and dichroism
33.57.+c Magneto-optical and electro-optical spectra and effects

Phase‐locking lasers with phase conjugation

Jack Feinberg and G. David Bacher

Appl. Phys. Lett. 48, 570 (1986); http://dx.doi.org/10.1063/1.96469 (3 pages) | Cited 15 times

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Techniques are described for phase locking two or more lasers using phase‐conjugating mirrors. Any changes in the optical cavity length or in the spatial mode structure of the optical beams are automatically compensated. Two argon‐ion lasers were locked using a photorefractive crystal of BaTiO3 acting as a self‐pumped phase‐conjugating mirror.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Bistability and switching in thin‐film waveguides with liquid‐crystal cladding

J. D. Valera, B. Svensson, C. T. Seaton, and G. I. Stegeman

Appl. Phys. Lett. 48, 573 (1986); http://dx.doi.org/10.1063/1.96470 (2 pages) | Cited 5 times

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The transmission of guided waves through a thin‐film waveguide with an oriented liquid‐crystal cladding of K18 exhibits, near the liquid‐crystal nematic–isotropic phase transition, a number of all‐optical operations, such as switching and bistability.
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42.79.Gn Optical waveguides and couplers
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.82.-m Integrated optics
75.20.Ck Nonmetals

Angular distribution of sputtered particles measured by quartz crystal microbalances and Auger electron spectroscopy

E. Taglauer and J. Onsgaard

Appl. Phys. Lett. 48, 575 (1986); http://dx.doi.org/10.1063/1.96471 (3 pages) | Cited 5 times

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A method for measuring angular distributions of sputtered particles in situ under ultrahigh vacuum conditions has been developed. It is based on a simultaneous collection of the ejected atoms on a number of quartz crystal microbalances (QCM’s), arranged in a semicircular pattern. Furthermore, it is possible to monitor the chemical state of the surface of the QCM’s and to register the amount of deposited material by means of Auger electron spectroscopy. By this method the time evolution of the angular distribution can be followed from quartz crystal coverages in the submonolayer regime to depositions corresponding to many monolayers.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Ion channeling through a thin Si‐liquid interface

K. R. Padmanabhan, P. J. Drallos, R. B. Alexander, and J. C. Buchholz

Appl. Phys. Lett. 48, 578 (1986); http://dx.doi.org/10.1063/1.96472 (3 pages) | Cited 1 time

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The feasibility of ion channeling through the wall of a thin Si‐liquid cell has been investigated. We have shown experimentally that it is possible to channel ions through a thin Si‐liquid interface. With water the channeling minimum yield is 0.45 at the interface. This is higher than that required for application of this technique to gain structural information at the solid‐liquid interfaces. It is also higher than that required for the determination of preferred positions of deposited impurity atoms at the interface.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Icosahedral quasicrystal produced by gas evaporation of an Al‐Mn alloy

Yahachi Saito, Ho S. Chen, and Kazuhiro Mihama

Appl. Phys. Lett. 48, 581 (1986); http://dx.doi.org/10.1063/1.96473 (3 pages) | Cited 5 times

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Al‐Mn alloy particles prepared by evaporation of an Al‐10 at. % Mn alloy in He gas have been found to exhibit the same diffraction pattern reported for a melt‐spun Al6Mn icosahedral quasicrystal. An x‐ray energy dispersive analysis shows a Mn content of about 24 at. %.
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61.66.Dk Alloys
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.05.cp X-ray diffraction

Stability of an amorphous SiC/Si tandem solar cell with blocking barriers

Y. Tawada, J. Takada, N. Fukada, M. Yamaguchi, H. Yamagishi, K. Nishimura, M. Kondo, Y. Hosokawa, K. Tsuge, T. Nakayama, and I. Hatano

Appl. Phys. Lett. 48, 584 (1986); http://dx.doi.org/10.1063/1.96474 (3 pages) | Cited 11 times

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A very stable amorphous SiC/Si (a‐SiC/a‐Si) heterojunction solar cell has been developed. The cell structure is of multijunction type with blocking barriers for the dopants and metal diffusion. This new tandem cell exhibits excellent stability for both thermal and sunlight conditions. After 2000 h of light exposure, an observable photodegradation is not seen in the cell performance. The improvements are achieved by the low‐temperature deposition of first a p a‐SiC layer, and by the blocking barriers for dopants and metal diffusion.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Lattice matching at elevated substrate temperature for growth of GaAs films with good electrical properties on CaxSr1−xF2/GaAs(100) structures

K. Tsutsui, H. Ishiwara, and S. Furukawa

Appl. Phys. Lett. 48, 587 (1986); http://dx.doi.org/10.1063/1.96475 (3 pages) | Cited 12 times

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GaAs films were grown on CaxSr1−xF2/GaAs (100) structures by molecular beam epitaxy using a two‐step growth technique and the effects of lattice mismatch between the GaAs and fluoride films at elevated temperature and room temperature were investigated. Electron Hall mobility measurements showed that the lattice matching at elevated temperature is more desirable for device applications.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Hydrogen injection and neutralization of boron acceptors in silicon boiled in water

A. J. Tavendale, A. A. Williams, and S. J. Pearton

Appl. Phys. Lett. 48, 590 (1986); http://dx.doi.org/10.1063/1.96476 (3 pages) | Cited 46 times

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Hydrogen injection and neutralization of boron acceptors are observed in p‐type crystalline Si boiled in water. Electrical neutralization of acceptors by hydrogen was measured by capacitance‐voltage profiling of Al‐contact Schottky diodes from material boiled in light or heavy water, and confirmed by secondary ion mass spectrometry depth profiling of deuterium. Boiling 1 Ω cm p‐Si in water for 6 h (dark conditions) shows significant neutralization to ∼1 μm depth; a drastic reduction in neutralization occurs under strong white light illumination. Hydrogen injection efficiency reduces with increasing resistivity and boiling time, the latter effect suggesting that a surface limiting reaction (for example oxidation) may be involved in the generation of injection sites. Field drift of the donorlike, hydrogen‐related neutralizing defect was detected in reverse‐biased diodes.
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78.40.Fy Semiconductors
66.30.J- Diffusion of impurities
81.40.Rs Electrical and magnetic properties related to treatment conditions
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Origin of the main deep electron trap in electron irradiated InP

Alain Sibille

Appl. Phys. Lett. 48, 593 (1986); http://dx.doi.org/10.1063/1.96477 (3 pages) | Cited 12 times

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The electrical activity and annealing behavior of the main electron trap in electron irradiated InP p+n junctions has been investigated. A very marked depth dependence of the annealing rate has been found. Moreover, this center apparently acts as if it were a deep donor, leading to an increase of carrier concentration on the n side. All these results are coherently interpreted with a model in terms of radiation defect D(P) (phosphorus interstitial or vacancy), residual shallow acceptor complexing, the final annealing resulting from a dissociation of the complex followed by a diffusion and either recapture or annihilation of D(P).
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61.80.Fe Electron and positron radiation effects
66.30.Lw Diffusion of other defects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
78.40.Fy Semiconductors

Structure and bonding at the CaF2/Si (111) interface

F. J. Himpsel, F. U. Hillebrecht, G. Hughes, J. L. Jordan, U. O. Karlsson, F. R. McFeely, J. F. Morar, and D. Rieger

Appl. Phys. Lett. 48, 596 (1986); http://dx.doi.org/10.1063/1.96478 (3 pages) | Cited 40 times

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High resolution core level spectroscopy with synchrotron radiation is used to determine the bonding at the epitaxial CaF2/Si (111) interface. It is found that both Ca and F bond to Si at the interface inducing core level shifts of +0.4 eV and −0.8 eV, respectively. Structural models with an atomically sharp interface are proposed where Ca bonds to the first layer Si and F to the second layer.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)

Time‐resolved capacitive coupling voltage contrast—a new voltage measurement technique for passivated devices

E. I. Cole, C. R. Bagnell, F. A. DiBianca, D. Johnson, W. Oxford, C. Smith, and R. H. Propst

Appl. Phys. Lett. 48, 599 (1986); http://dx.doi.org/10.1063/1.96479 (2 pages) | Cited 3 times

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A scanning electron microscope is used in the voltage contrast mode to examine dynamic voltages on passivated integrated circuits. At low primary electron beam energies negative voltage transients produce a capacitive coupling voltage contrast flash visible through passivation layers. The flash decay time is related to the amplitude of the voltage transient. This new voltage measuring method is called time‐resolved capacitive coupling voltage contrast. Preliminary results yield voltage calibration curves with a standard error of 45 mV or lower.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
79.20.Hx Electron impact: secondary emission
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Synthesis of Nb3Ga and Nb3Al superconducting composites by laser beam irradiation

H. Kumakura, K. Togano, K. Tachikawa, Y. Yamada, S. Murase, E. Nakamura, and M. Sasaki

Appl. Phys. Lett. 48, 601 (1986); http://dx.doi.org/10.1063/1.96480 (3 pages) | Cited 9 times

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Nb3Ga and Nb3Al superconductors were successfully fabricated by continuous CO2 laser beam irradiation of a moving material. Transition temperatures after the irradiation are 17.0 and 16.5 K, respectively. These temperatures are increased by ∼2 K by the subsequent annealings. Critical current density Jc (for the reacted area) of 3×104 A/cm2 at 15 T and 4.2 K is obtained for Nb3Al tape with small magnetic field dependence up to 23 T. The results indicate that the continuous laser beam irradiation is a very attractive method for fabricating advanced superconductors, such as Nb3Ga, Nb3Al, Nb3(Al,Ge), etc.
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74.25.-q Properties of superconductors
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.20.-n Methods of materials synthesis and materials processing

Observation of magnetic dead layers at the surface of iron oxide films

S. S. P. Parkin, R. Sigsbee, R. Felici, and G. P. Felcher

Appl. Phys. Lett. 48, 604 (1986); http://dx.doi.org/10.1063/1.96481 (3 pages) | Cited 29 times

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Depth profiles of the magnetization of sputtered films of Fe3O4 and its oxidized form, γ‐Fe2O3, were obtained by the new polarized neutron reflection technique. We find that the magnetization of Fe3O4 is constant throughout the thickness (2600 Å) of the film except for a surface region about 25 Å deep corresponding to the surface roughness. In contrast the oxidized sample shows a magnetically dead layer ∼150 Å thick at the surface. X‐ray and transmission electron microscopy studies give no evidence that the surface layers differ structurally from the bulk of the film, although there is the possibility of a highly defective surface region formed during the oxidation process.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.30.Cr Saturation moments and magnetic susceptibilities
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Geometry‐defined electrical interconnection by a homogeneous medium

S. Etemad, X. Quan, and N. A. Sanders

Appl. Phys. Lett. 48, 607 (1986); http://dx.doi.org/10.1063/1.96482 (3 pages) | Cited 7 times

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We describe a geometry‐defined electrical interconnection medium based on a composite of small metal particles dispersed uniformly in an insulator. The volume fraction of metal particles, p, is just below the critical value pc, which corresponds to the percolation threshold. As a result, the conductance between two points drops sharply by several orders of magnitude as their separation increases beyond a well‐defined short range coherence length ξ. We show how, by careful control of p, a homogeneous composite can provide isolated electrical interconnection paths, or ‘‘vias’’. These vias are simply defined by controlling their geometry; thus, they provide an easily processable, solderless means for vertical interconnection in a variety of high density packaging schemes.
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84.32.Dd Connectors, relays, and switches
71.30.+h Metal-insulator transitions and other electronic transitions
85.40.Bh Computer-aided design of microcircuits; layout and modeling
81.05.Ni Dispersion-, fiber-, and platelet-reinforced metal-based composites
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