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7 Jul 1986

Volume 49, Issue 1, pp. 1-53


Overtone pumped superfluorescent HCl laser frequency converter

Y. Shimoji and N. Djeu

Appl. Phys. Lett. 49, 1 (1986); http://dx.doi.org/10.1063/1.97088 (3 pages) | Cited 8 times

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Superfluorescent emission from a hollow waveguide filled with HCl has been obtained on the v=2→v=1 band when optically pumped on the v=0→v=2 band. Energy conversion efficiency in excess of 10% has been measured. The beam quality of the emission was three times better than that of the pump radiation under optimal conditions.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.50.Nn Quantum optical phenomena in absorbing, amplifying, dispersive and conducting media; cooperative phenomena in quantum optical systems
42.55.-f Lasers

Efficient stimulated Brillouin backscattering of multiple pulses in the highly transient regime

M. A. Greiner‐Mothes and K. J. Witte

Appl. Phys. Lett. 49, 4 (1986); http://dx.doi.org/10.1063/1.97081 (3 pages) | Cited 8 times

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Stimulated Brillouin scattering in the highly transient regime is experimentally investigated using a multipulse reflection scheme. In high pressure N2 and SF6 backward pulses with reflection coefficients approaching 1 are demonstrated employing 1 ns pump pulses at 1.32 μm. The experimentally observed reflection behavior is satisfactorily reproduced by a numerical solution of the equations describing the scattering process. The phase conjugated fractions in the backscattered light is large.
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42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
43.35.Ae Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in gases

Output pulse termination of a self‐sustained excimer laser

M. R. Osborne, J. Coutts, M. H. R. Hutchinson, and C. E. Webb

Appl. Phys. Lett. 49, 7 (1986); http://dx.doi.org/10.1063/1.97083 (3 pages) | Cited 16 times

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Theoretical predictions of the nature of the premature termination of the laser output of a long‐pulse discharge‐pumped rare‐gas‐halide laser are tested on a large scale x‐ray preionized XeCl system. Results are presented which support the theory that the termination is caused by local depletion of the halogen donor molecule leading to discharge instabilities. Predictions of methods of extending the laser output pulse duration have been made and experimentally demonstrated.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
52.80.Tn Other gas discharges

Integrated‐optic, narrow‐linewidth laser

S. K. Korotky, E. A. J. Marcatili, G. Eisenstein, J. J. Veselka, F. Heismann, and R. C. Alferness

Appl. Phys. Lett. 49, 10 (1986); http://dx.doi.org/10.1063/1.97084 (3 pages) | Cited 3 times

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We report the demonstration of the single‐frequency and narrow‐linewidth (<100 kHz) operation of an extended cavity laser consisting of a Ti:LiNbO3 single‐mode waveguide circuit and an InGaAsP waveguide gain medium. A parallel coupled cavity, electro‐optic elements for tuning the resonant frequencies of the cavities, and an external phase modulator are integrated on the lithium niobate crystal.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Fc Modulation, tuning, and mode locking
42.82.-m Integrated optics

Antiresonant reflecting optical waveguides in SiO2‐Si multilayer structures

M. A. Duguay, Y. Kokubun, T. L. Koch, and Loren Pfeiffer

Appl. Phys. Lett. 49, 13 (1986); http://dx.doi.org/10.1063/1.97085 (3 pages) | Cited 181 times

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A new type of optical waveguide utilizing an antiresonant reflector is described. Implementation in the SiO2‐Si system gave losses as low as 0.4 dB/cm for the TE mode. The TM mode loss is >60 dB/cm, making the device an excellent planar technology integrated optic polarizer.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers

P. S. Zory, A. R. Reisinger, R. G. Waters, L. J. Mawst, C. A. Zmudzinski, M. A. Emanuel, M. E. Givens, and J. J. Coleman

Appl. Phys. Lett. 49, 16 (1986); http://dx.doi.org/10.1063/1.97086 (3 pages) | Cited 37 times

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Thermally induced threshold wavelength shifts of 50 nm have been observed in short cavity length diode lasers fabricated from thin quantum well AlGaAs. Analysis suggests that the high‐energy radiation is generated by transitions between the n=2 level in the conduction band and the n=2 heavy hole level in the valence band. The threshold characteristic temperature (T0) of the laser material is found to be a strong function of cavity length.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Figure of merit for magneto‐optical media based on the dielectric tensor

M. Mansuripur

Appl. Phys. Lett. 49, 19 (1986); http://dx.doi.org/10.1063/1.97087 (3 pages) | Cited 18 times

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A figure of merit is derived for the magneto‐optical media used in erasable optical data storage. It is shown that the ratio of the useful signal generated by the polar Kerr effect to the incident laser power is always below the figure of merit, but the figure can be approached if the magneto‐optic medium is embedded in a proper multilayer structure.
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78.20.Ls Magneto-optical effects
42.79.Vb Optical storage systems, optical disks

Low‐loss Te‐based chalcogenide glass optical fibers

Toshio Katsuyama and Hiroyoshi Matsumura

Appl. Phys. Lett. 49, 22 (1986); http://dx.doi.org/10.1063/1.97089 (2 pages) | Cited 16 times

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Infrared optical fibers composed of Te‐based chalcogenide glass have been fabricated by using a high‐speed drawing method. Transmission loss at 10.6 μm wavelength is reduced to 1.5 dB/m.
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42.81.Bm Fabrication, cladding, and splicing
42.81.Dp Propagation, scattering, and losses; solitons
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Scanning acousto‐electro‐optic light deflector with uniform intensity response

Hyuk Lee

Appl. Phys. Lett. 49, 24 (1986); http://dx.doi.org/10.1063/1.97071 (2 pages) | Cited 4 times

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A deflector whose scanned output beam is of uniform intensity with respect to the scan angle is proposed. This deflector is based on the control of the phase mismatch of the acousto‐optic deflector via acousto‐electro‐optic effect. An experimental result of this deflector is presented.
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42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters
42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects
43.38.Zp Acoustooptic and photoacoustic transducers

Material‐dependent infrared transmittance of mineral wool

G. Ljungdahl and C‐G. Ribbing

Appl. Phys. Lett. 49, 26 (1986); http://dx.doi.org/10.1063/1.97072 (3 pages) | Cited 4 times

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The specular infrared transmittance of mineral wool is reported and compared to the optical properties of the raw material, a silicate glass. A transmittance peak at 8.3 μm for the wool, not previously reported, is correlated to the reflectance minimum at the same wavelength for the bulk glass. It is concluded that the radiative behavior of this fibrous insulation cannot be described by gray models, neglecting the dispersion of the raw material. It is also demonstrated that the transmittance peak values are much higher than could be expected from the absorption of the glass. This is tentatively explained as an effect of forward scattering through very small angles, thus increasing the specular transmittance.
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78.30.-j Infrared and Raman spectra
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
44.30.+v Heat flow in porous media
42.25.Bs Wave propagation, transmission and absorption
42.25.Dd Wave propagation in random media

Growth of GaAs bicrystals

N.‐H. Cho, C. B. Carter, Z. Elgat, and D. K. Wagner

Appl. Phys. Lett. 49, 29 (1986); http://dx.doi.org/10.1063/1.97073 (3 pages) | Cited 3 times

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Bicrystals of gallium arsenide have been grown by the technique of organometallic, vapor phase epitaxy on substrates cut from Czochralski‐grown germanium bicrystals. Both 〈110〉 and 〈001〉 tilt boundaries have been grown. Experimental illustrations of the Σ=3 and Σ=5 grain boundaries are presented. The grain boundaries tend to facet along well‐defined planes but closely reproduce the misorientation of the seed bicrystal.
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81.10.Bk Growth from vapor
61.72.Mm Grain and twin boundaries

Optoelectrochemical impedance measurements: A new technique for the electrical characterization of dielectric/semiconductor interfaces

Y. Stricot, P. Clechet, and J. R. Martin

Appl. Phys. Lett. 49, 32 (1986); http://dx.doi.org/10.1063/1.97074 (3 pages) | Cited 3 times

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We have developed a new method for the characterization of dielectric/semiconductor interfaces. This technique uses an electrolyte/dielectric/semiconductor structure under electrochemical potentiostatic polarization, and a weak modulated illumination with above‐band‐gap light which acts as a probe and does not modify the thermodynamic equilibrium of the electrochemical system too much. The analyzed photopotential relative to illumination in terms of impedance allows the characterization of the dielectric/semiconductor interface. To demonstrate the optoelectrochemical impedance measurement technique, results obtained on a p‐Si/SiO2 sample are presented. The advantages of this method compared to purely solid‐state impedance and electrochemical impedance measurements are discussed.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Mr Semiconductor-electrolyte contacts
72.40.+w Photoconduction and photovoltaic effects
82.47.-a Applied electrochemistry

Theoretical study of electron mobility in a two‐dimensional electron gas confined at a lattice‐matched ZnSe‐Zn(S,Te) heterointerface

H. E. Ruda

Appl. Phys. Lett. 49, 35 (1986); http://dx.doi.org/10.1063/1.97075 (3 pages) | Cited 6 times

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A strain‐free ZnSe‐Zn(S,Te): x≊0.37 heterointerface is proposed as an ideal structure for the confinement of a two‐dimensional electron gas in ZnSe. The electron mobilities were calculated for this structure for the first time, including all major scattering mechanisms, and considering both intra‐ and inter‐subband scattering processes. The dependence of the electron mobility at both 4.2 and 77 K on the areal density in the well was calculated. The peak inherent mobility limit was found to be about 3×105 and about 1×104 cm2/V s at 4.2 and 77 K, respectively.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Dp General theory, scattering mechanisms
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Temperature dependence of shunt resistance in photovoltaic devices

S. Banerjee and W. A. Anderson

Appl. Phys. Lett. 49, 38 (1986); http://dx.doi.org/10.1063/1.97076 (3 pages) | Cited 7 times

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Shunt resistance in surface passivated Si solar cells has been experimentally shown to be temperature dependent with a maximum value of 2×107 Ω cm2. Mechanisms responsible for shunt resistance are identified as a combination of multistep tunneling and thermal trapping‐detrapping of carriers through the defect states in the space‐charge region.
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84.60.Jt Photoelectric conversion
73.40.Cg Contact resistance, contact potential
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.40.Fy Semiconductors

Electrical characteristics of InAsSb/GaSb heterojunctions

A. K. Srivastava, J. L. Zyskind, R. M. Lum, B. V. Dutt, and J. K. Klingert

Appl. Phys. Lett. 49, 41 (1986); http://dx.doi.org/10.1063/1.97077 (3 pages) | Cited 23 times

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Heterojunctions of n‐type InAs0.95Sb0.05 grown by metalorganic chemical vapor deposition on n‐type GaSb substrates were studied by capacitance‐voltage and current‐voltage measurements. The n‐n heterojunctions are strongly rectifying and behave like metal‐(n) GaSb Schottky diodes with a barrier height of 0.80±0.02 eV. These measurements establish that the band lineup in this system is of the broken gap variety. We measure the valence‐band offset, Ev(GaSb)−Ev(InAs0.95Sb0.05), to be 0.67±0.04 eV.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Minority electron diffusion coefficient from lifetime measurement combination

Maria Cristina Carotta, Marco Merli, Luigi Passari, and Enrichetta Susi

Appl. Phys. Lett. 49, 44 (1986); http://dx.doi.org/10.1063/1.97078 (2 pages) | Cited 8 times

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Minority electron diffusion coefficients as a function of dopant density are evaluated from the comparison between a steady state diffusion length (photoelectromagnetic effect) and a transient lifetime (photoconductivity decay) measurement. The reliability of the method is discussed with reference to the limits inherent to the two techniques. Within the limits of the experimental data dispersion, minority values comparable to the majority ones for the doping range 3×1014<ND<3×1017 are obtained.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
81.40.Rs Electrical and magnetic properties related to treatment conditions

Fabrication of Nb3Al and Nb3(Al,Ge) superconducting composite tapes by electron beam irradiation

H. Kumakura, K. Togano, K. Tachikawa, S. Tsukamoto, and H. Irie

Appl. Phys. Lett. 49, 46 (1986); http://dx.doi.org/10.1063/1.97079 (3 pages) | Cited 10 times

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Nb3Al and Nb3(Al,Ge) superconductors were synthesized using continuous electron beam irradiation on powder metallurgy processed Nb‐Al and Nb‐Al‐Ge composite tapes. Transition temperatures Tc(onset) of 18.5 and 20.2 K were obtained for Nb‐Al and Nb‐Al‐Ge tapes respectively, which indicated that nearly stoichiometric Al5 compounds were formed. Critical current density Jc (for reacted area) is nearly constant at fields above 15 T, with excellent values of ∼2×104 A/cm2 at 23 T and 4.2 K for both tapes. The excellent Jc’s as well as the easy scale‐up procedure indicate that electron beam irradiation is promising for the fabrication of practical Nb3Al and Nb3(Al,Ge) superconductors, which can generate extremely high fields of ∼25 T.
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74.25.-q Properties of superconductors
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
61.80.Fe Electron and positron radiation effects

33.6 T dc magnetic field produced in a hybrid magnet with Ho pole pieces

L. G. Rubin, B. L. Brandt, R. J. Weggel, S. Foner, and E. J. McNiff

Appl. Phys. Lett. 49, 49 (1986); http://dx.doi.org/10.1063/1.97080 (3 pages) | Cited 4 times

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A dc magnetic field of 33.6±0.3 T was produced in a hybrid magnet whose central field was enhanced by a 3.5 T contribution from holmium pole pieces. The working (sample) volume was a 2‐mm gap between the 19‐mm‐diam×32‐mm‐long pole pieces tapered to 12‐mm‐diam faces. The magnetic field was measured with high‐field/low‐temperature Hall‐effect sensors whose reproducibility and linearity made practical an extrapolation technique for fields above 30 T. Three superconducting samples with previously measured upper critical fields were used as calibration check points.
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07.55.Db Generation of magnetic fields; magnets
85.70.-w Magnetic devices
07.55.-w Magnetic instruments and components
85.25.-j Superconducting devices

Magneto‐optical properties of vacuum‐deposited PtMnSb thin films

Takashi Inukai, Morito Matsuoka, and Kenichi Ono

Appl. Phys. Lett. 49, 52 (1986); http://dx.doi.org/10.1063/1.97082 (2 pages) | Cited 15 times

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Magneto‐optical properties for PtMnSb thin films, prepared by sequential vacuum deposition and annealing, are examined. PtMnSb thin films annealed at 500 °C exhibit a large Faraday rotation (θF) of 7.3×105 deg cm−1 as well as a large polar Kerr rotation (θK) of −1.8° at 633 nm. They transmit light well in the 400–900 nm wavelength range with an absorption coefficient (α) of 3.2×105 cm−1 at 633 nm. The magneto‐optical figures of merit at 633 nm were 2θF/α =4.6 deg for transmitted light and (R)1/2θK =0.99 deg for reflected light.
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75.20.Ck Nonmetals
78.20.Ls Magneto-optical effects
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