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15 Sep 1986

Volume 49, Issue 11, pp. 605-677

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Far‐field analytical model for laser arrays and fitting with experimental results

J. Berger and D. Fekete

Appl. Phys. Lett. 49, 605 (1986); http://dx.doi.org/10.1063/1.97054 (3 pages)

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Coupled laser arrays emit far‐field radiation which is not well described by the grating‐like formulation. An exact diffraction theory solution for the far field of coupled laser arrays is derived. The model is used to obtain excellent fit with the far‐field pattern of a twin coupled laser diode operated under pulse modulation and with that of a hybrid coupled diode laser device. The fitted results exhibit the existence of a small phase difference between the coupled stripes and this difference is increased up to 12° in the hybrid device.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.15.Dp Wave fronts and ray tracing
42.25.Fx Diffraction and scattering

Broadly tunable infrared parametric oscillator using AgGaSe2

R. C. Eckardt, Y. X. Fan, R. L. Byer, C. L. Marquardt, M. E. Storm, and L. Esterowitz

Appl. Phys. Lett. 49, 608 (1986); http://dx.doi.org/10.1063/1.97055 (3 pages) | Cited 40 times

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The first successful operation of a AgGaSe2 infrared parametric oscillator is reported. Continuous tuning ranges of 1.6–1.7 μm, 6.7–6.9 μm, and 2.65–9.02 μm were achieved using 1.34‐μm neodymium and 2.05‐μm holmium pump lasers. Pulse energies exceeding 3 mJ, peak powers near 100 kW, and conversion efficiencies of 18% were obtained. Operation of the parametric oscillator was possible well below the 13–40 MW/cm2 surface damage threshold of this nonlinear material.
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84.30.Le Amplifiers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
85.60.Jb Light-emitting devices
42.72.-g Optical sources and standards

Phase‐locked controlled filament laser

J. Salzman, A. Larsson, and A. Yariv

Appl. Phys. Lett. 49, 611 (1986); http://dx.doi.org/10.1063/1.97056 (3 pages) | Cited 7 times

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A broad area semiconductor laser with induced self‐focusing in the form of a phase‐locked array of filaments is demonstrated. The multifilamentary laser has a single lobed and nearly diffraction limited far‐field pattern, for injection currents up to I≂1.85Ith.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Diffraction‐limited emission from a diode laser array in an apertured graded‐index lens external cavity

C. Chang‐Hasnain, D. F. Welch, D. R. Scifres, J. R. Whinnery, A. Dienes, and R. D. Burnham

Appl. Phys. Lett. 49, 614 (1986); http://dx.doi.org/10.1063/1.97613 (3 pages) | Cited 14 times

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A gain‐guided coupled‐stripe GaAs/GaAlAs diode laser array in an external cavity configuration consisting of a graded refractive index lens and a 25‐μm stripe apertured mirror was studied. Output power of almost 500 mW was obtained from the cavity under pulsed operation. A centered, single‐lobed far‐field radiation pattern which did not steer with the drive current was observed up to 4.1Ith. At 2Ith approximately 94% of the 102‐mW output power is contained in the 0.8° full width half‐maximum central lobe.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Polarization recovery in phase conjugation by modal dispersal

Kazuo Kyuma, Amnon Yariv, and Sze‐Keung Kwong

Appl. Phys. Lett. 49, 617 (1986); http://dx.doi.org/10.1063/1.97057 (3 pages) | Cited 8 times

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We demonstrate scalar phase conjugation, i.e., one in which both transverse components of the incident beam are phase conjugated, which is achieved by tandem combination of a mode scrambling fiber and a photorefractive passive phase conjugate mirror.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.81.Gs Birefringence, polarization
78.20.Jq Electro-optical effects

Intensity profiles of short optical pulses via temporally reversed pulses

Steven R. Montgomery, Donald O. Pederson, and Gregory J. Salamo

Appl. Phys. Lett. 49, 620 (1986); http://dx.doi.org/10.1063/1.97058 (2 pages) | Cited 3 times

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A new technique is reported for determining the intensity profile of optical pulses on a subpicosecond timescale. Several examples are presented in order to demonstrate the capability of the technique.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Picosecond laser melting and evaporation of GaAs surfaces

J. M. Liu, A. M. Malvezzi, and N. Bloembergen

Appl. Phys. Lett. 49, 622 (1986); http://dx.doi.org/10.1063/1.97059 (3 pages) | Cited 11 times

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Picosecond laser‐induced melting and evaporation of GaAs surfaces are studied. The high reflectivities of molten GaAs observed at fluences above the melting threshold have a wavelength dependence inconsistent with a simple Drude model for a metallic molten GaAs surface. The observations at high laser fluences suggest that the liquid‐vapor phase transition is initiated by a fast‐expanding, high‐density fluid.
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79.20.Ds Laser-beam impact phenomena
64.70.F- Liquid-vapor transitions
64.70.D- Solid-liquid transitions
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Laser pulse width dependent surface ripples on silicon

D. Jost, W. Lüthy, H. P. Weber, and R. P. Salathé

Appl. Phys. Lett. 49, 625 (1986); http://dx.doi.org/10.1063/1.97060 (3 pages) | Cited 10 times

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Scanned irradiation of a Si (111) crystal with a focused cw mode‐locked argon or neodymium:yttrium aluminum garnet laser to its melting threshold has generated a type of surface morphology, ripples, with a periodicity which is dependent on the laser pulse width. We interpret these ripples as being a thermoelastically generated surface acoustic wave frozen out on the crystal surface.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
43.35.Pt Surface waves in solids and liquids
43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
81.40.Gh Other heat and thermomechanical treatments

Amorphous and crystalline oxide precipitates in oxygen implanted silicon

A. H. van Ommen, B. H. Koek, and M. P. A. Viegers

Appl. Phys. Lett. 49, 628 (1986); http://dx.doi.org/10.1063/1.97061 (3 pages) | Cited 28 times

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We studied precipitation of oxygen in the region below the buried oxide of a silicon‐on‐insulator structure formed by high‐dose implantation of oxygen. Underneath the oxide layer there is first a region containing amorphous precipitates, spherical in shape. At greater depth, platelike precipitates of the monoclinic silica phase coesite are observed on {113} silicon planes. The lower interface of the buried oxide is very rough compared to the upper interface. The morphology of the implanted structure is attributed to intrinsic point defects. In particular it is proposed that a high concentration of self‐interstitials occurs below the oxide as soon as it becomes a continuous layer. This leads to a large reduction of the oxidation rate in this region. Oxidation then only occurs above the buried oxide, reducing the thickness of the superficial silicon film.
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81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
64.75.-g Phase equilibria
61.72.U- Doping and impurity implantation
61.72.jd Vacancies
61.72.jj Interstitials

Structure of interfaces in amorphous silicon/silicon nitride superlattices determined by in situ optical reflectance

L. Yang, B. Abeles, and P. D. Persans

Appl. Phys. Lett. 49, 631 (1986); http://dx.doi.org/10.1063/1.97062 (3 pages) | Cited 11 times

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The formation of amorphous hydrogenated silicon/silicon nitride (a‐Si@B:H/a‐SiNx@B:H) interfaces is observed in real time by in situ optical reflectance measurements from growing a‐Si@B:H/a‐SiNx@B:H superlattices. The optical data are interpreted by a model of atomically abrupt interfaces with macroscopic roughness on a scale of 10 Å.
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68.35.Fx Diffusion; interface formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
75.20.Ck Nonmetals
68.35.Gy Mechanical properties; surface strains

Synthesis of diamond by laser‐induced chemical vapor deposition

Katsuki Kitahama, Kazuhiko Hirata, Hirohide Nakamatsu, Shichio Kawai, Naoji Fujimori, Takahiro Imai, Hiroshi Yoshino, and Akira Doi

Appl. Phys. Lett. 49, 634 (1986); http://dx.doi.org/10.1063/1.97063 (2 pages) | Cited 39 times

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Diamond has been obtained by ArF excimer laser‐induced chemical vapor deposition. The reaction was carried out by use of C2H2 diluted with H2 as a source gas and at the pressure range of 8–75 Torr. The products were characterized by scanning electron microscopy and reflection electron diffraction. Deposits prepared in the temperature range of 40–800 °C, which were measured by the thermocouple attached to the substrate, show several lines of diamond in the reflection electron diffraction photographs. The fact that the laser beam must be concentrated for the diamond formation to occur strongly suggests that the reaction proceeds through a multiple photon process.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Low current threshold AlGaAs visible laser diodes with an (AlGaAs)m(GaAs)n superlattice quantum well

T. Hayakawa, T. Suyama, K. Takahashi, M. Kondo, S. Yamamoto, and T. Hijikata

Appl. Phys. Lett. 49, 636 (1986); http://dx.doi.org/10.1063/1.97064 (3 pages) | Cited 6 times

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Very short period (AlGaAs)m(GaAs)n superlattices (SL’s) have been used for single quantum wells (SQW’s) of visible laser diodes emitting in the wavelength region of 680–785 nm for the first time. The threshold current of graded‐index separate‐confinement‐heterostructure (GRIN SCH) lasers with SL SQW’s is lower than that of lasers with AlGaAs alloy SQW’s. The ridge‐waveguide structure GRIN SCH SL SQW laser emitting at 785 nm shows the low threshold current of 11 mA.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission
78.40.Fy Semiconductors

Well size dependence of Stark shifts for heavy‐hole and light‐hole levels in GaAs/AlGaAs quantum wells

T. Hiroshima and R. Lang

Appl. Phys. Lett. 49, 639 (1986); http://dx.doi.org/10.1063/1.97065 (3 pages) | Cited 9 times

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Stark shifts for heavy‐hole and light‐hole levels in an isolated GaAs/AlGaAs quantum well have been analyzed by an exact numerical calculation within the envelope function approximation. The calculated results predict that for wells thicker than about 100 Å the Stark shift for heavy hole is larger than that for light hole; however, for thinner wells this tendency is reversed. It also predicts that this well size dependence strongly depends on the band offset ratio.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Atomistic Monte Carlo calculation of critical layer thickness for coherently strained siliconlike structures

Brian W. Dodson and Paul A. Taylor

Appl. Phys. Lett. 49, 642 (1986); http://dx.doi.org/10.1063/1.97066 (3 pages) | Cited 65 times

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Monte Carlo based techniques were used to study the stability of thin, coherently strained layers of mismatched siliconlike semiconductor material. The atomic interaction used for this study is the Stillinger–Weber potential [Phys. Rev. B 31, 5262 (1985)], modified to allow modeling of mismatched materials. Layers from 3 to 80 Å thickness were considered. For layers greater than about 20 Å thickness, the critical layer thickness is accurately described by the continuum theory of Matthews and Blakeslee [J. Cryst. Growth 27, 118 (1974)]. For thinner layers, however, the strain energy associated with misfit dislocations varies from the continuum value, resulting in smaller critical layer thickness, to the extent that critical mismatch as a function of layer thickness becomes nonmonotonic for the thinnest films considered.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.60.Dv Thermal stability; thermal effects

Evidence of light‐induced bond breaking in hydrogenated amorphous silicon

C. S. Hong and H. L. Hwang

Appl. Phys. Lett. 49, 645 (1986); http://dx.doi.org/10.1063/1.97067 (3 pages) | Cited 15 times

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Experimental evidence of bond breaking in hydrogenated amorphous Si films is presented, which accounts for the degradation of solar cell performance. For films with prolonged illumination, Fourier transform infrared spectroscopy showed distinct transitions occurring among various bonds, and electron paramagnetic resonance showed dangling bonds being produced. The bond breaking was reversible by thermal annealing.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.30.Hv Other nonmetallic inorganics
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
84.60.Jt Photoelectric conversion

Electroreflectance study of HgCdTe in the metal‐insulator‐semiconductor configuration at 77 K

A. Ksendzov, Fred H. Pollak, J. A. Wilson, and V. A. Cotton

Appl. Phys. Lett. 49, 648 (1986); http://dx.doi.org/10.1063/1.97068 (3 pages) | Cited 7 times

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Electroreflectance from Hg1−xCdxTe in the metal‐insulator‐semiconductor configuration at 77 K as a function of gate voltage has been investigated. We find the spectra consist of contributions from two considerably different compositions, one of which corresponds to semimetallic material (x≊0.1). The x≊0.1 component is a consequence of the passivation of the HgCdTe surface. There is some evidence that these two regions are distributed across the surface rather than in depth. In addition, the two components have different responses to the gate voltage. The higher composition region can be driven through a flat band while the lower composition portion cannot.
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78.20.Jq Electro-optical effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.-b Surface treatments

Activated reactive evaporation of hydrogenated amorphous silicon nitride

P. K. Shufflebotham, J. F. White, H. C. Card, and K. C. Kao

Appl. Phys. Lett. 49, 651 (1986); http://dx.doi.org/10.1063/1.97069 (3 pages)

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Activated reactive evaporation (ARE) of Si in NH3 and N2+H2 ambients has been used to fabricate amorphous Si:N:H thin films. The electrical and optical properties of these films are compared to those of evaporated a‐Si and reactively evaporated a‐Si:N:H. It is shown that the N2 and H2 gas mixture did not produce detectable N or H incorporation into the films, while substantial amounts of N and H were incorporated with NH3 gas. It is further shown that activated reactive evaporation with NH3 produces significantly more N and H incorporation than does reactive evaporation. This was clearly revealed in the electrical and optical properties of the films. The electrical and optical properties of the ARE films were comparable to materials produced by glow discharge techniques.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Patterning of fine structures in silicon dioxide layers by ion beam exposure and wet chemical etching

J. R. A. Cleaver, P. J. Heard, A. F. Evason, and H. Ahmed

Appl. Phys. Lett. 49, 654 (1986); http://dx.doi.org/10.1063/1.97070 (3 pages)

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Fine structures can be fabricated in silicon dioxide layers by a two‐stage process in which localized ion implantation enhances the rate at which the oxide can be etched chemically. This process has been investigated as a technique for maskless microfabrication using a scanning ion beam lithography system.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
85.40.Bh Computer-aided design of microcircuits; layout and modeling
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Origin of the nonexponential thermal emission kinetics of DX centers in GaAlAs

E. Calleja, P. M. Mooney, S. L. Wright, and M. Heiblum

Appl. Phys. Lett. 49, 657 (1986); http://dx.doi.org/10.1063/1.97559 (3 pages) | Cited 44 times

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Direct evidence has been found, via hydrostatic pressure experiments, that the random distribution of Al and Ga atoms (alloy broadening) is the main cause of the nonexponential behavior of thermal emission processes from DX centers in Ga1−xAlxAs alloys (0.19≤x≤0.74). Isothermal single‐shot emission transients at constant capacitance were used to measure the nonexponential behavior. Experimental values of the degree of nonexponentiality at ambient pressure, as a function of the Al content, are in good agreement with an alloy broadening model. When hydrostatic pressure up to 11 kbar is applied, the nonexponential behavior does not change, confirming its independence from variations in the conduction‐band structure.
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78.40.Fy Semiconductors
79.40.+z Thermionic emission
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Improved polycrystalline silicon sheet resistance by rapid thermal annealing prior and subsequent to ion implantation

S. R. Wilson, R. B. Gregory, W. M. Paulson, S. J. Krause, J. A. Leavitt, L. C. McIntyre, J. L. Seerveld, and P. Stoss

Appl. Phys. Lett. 49, 660 (1986); http://dx.doi.org/10.1063/1.97560 (3 pages) | Cited 4 times

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Polycrystalline Si films on oxidized Si wafers have been subjected to a rapid thermal processing anneal prior to As ion implantation. After ion implantation the films are given another rapid thermal processing anneal to activate the As. The preimplant anneal causes the as‐deposited grain size to increase by ∼ a factor of 10. These films have a 20–30% lower sheet resistance than films that were post‐implant annealed only. The increase in grain size by the preimplant anneal reduces the grain boundary area and therefore, minimizes the amount of dopant in the grain boundary relative to the grain.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Photoelectronic and electronic properties of Ti/Si amorphous superlattices

R. H. Willens

Appl. Phys. Lett. 49, 663 (1986); http://dx.doi.org/10.1063/1.97561 (3 pages) | Cited 24 times

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Amorphous Ti/Si superlattices have been prepared by electron beam evaporation. These superlattices exhibit electronic and photoelectronic properties which can be used in a variety of different types of devices. The photovoltaic output from this structure is greatly enhanced by deposition on Si substrates with electrical contacts made only to the superlattice film. The mechanism for the photovoltaic signals and illustrations of different types of devices are discussed.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Vz Semiconductor-metal-semiconductor structures
72.40.+w Photoconduction and photovoltaic effects
72.80.Ng Disordered solids

Initial decomposition of GaAs during rapid thermal annealing

T. E. Haynes, W. K. Chu, T. L. Aselage, and S. T. Picraux

Appl. Phys. Lett. 49, 666 (1986); http://dx.doi.org/10.1063/1.97562 (3 pages) | Cited 17 times

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A technique has been developed for direct, quantitative measurement of the amount of Ga and As evaporated from uncapped GaAs surfaces during rapid thermal annealing (RTA). The method involves collection of the evaporated molecules on a nearby copper film, followed by compositional analysis of the copper film using 5 MeV Rutherford backscattering. We have measured the rates of evaporation from uncapped GaAs surfaces during RTA in the temperature range 600–725 °C and found them to be in reasonable agreement with rates predicted from available measurements of the equilibrium vapor pressures of Ga and As.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Substrate hole current and oxide breakdown

I. C. Chen, S. Holland, K. K. Young, C. Chang, and C. Hu

Appl. Phys. Lett. 49, 669 (1986); http://dx.doi.org/10.1063/1.97563 (3 pages) | Cited 64 times

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It is known that when an n‐channel metal‐oxide‐semiconductor field‐effect transistor is biased with a high positive gate voltage, a hole current appears in the substrate cathode. Recent experiments indicate that the holes are generated within the oxide. We show that this hole generation mechanism is linked to oxide time‐dependent breakdown. When the hole fluence reaches a certain critical value, breakdown occurs. This is in agreement with a hole‐trapping‐induced breakdown model. For very thin oxides the hole generation rate can become so low that the substrate hole current is dominated by the tunneling of valence‐band electrons which is not expected to contribute to oxide breakdown. A different mechanism of hole generation such as hot‐hole tunneling from the anode may be responsible for oxide breakdown in the important case of low gate voltage (<6 V).
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk Tunneling
85.30.Tv Field effect devices

High resolution electron microscopy of the GaAs/Si3N4 interface produced by multipolar plasma deposition

P. Rutérana, P. Friedel, J. Schneider, and J. P. Chevalier

Appl. Phys. Lett. 49, 672 (1986); http://dx.doi.org/10.1063/1.97564 (2 pages) | Cited 3 times

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The analysis of the Si3N4/GaAs interface produced by the multipolar plasma chemical vapor deposition has been carried out using high resolution electron microscopy. For an optimized deposition process, we are able to produce abrupt interfaces between the Si3N4 and the crystalline GaAs. These results are compared to the interfaces produced in the conventional chemical vapor deposition technique.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Super‐resolution fluorescence near‐field scanning optical microscopy

A. Harootunian, E. Betzig, M. Isaacson, and A. Lewis

Appl. Phys. Lett. 49, 674 (1986); http://dx.doi.org/10.1063/1.97565 (3 pages) | Cited 137 times

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A one‐dimensional near‐field scanning optical microscope (NSOM) operating in the fluorescence mode has been demonstrated. NSOM line scans of both metallic edges and fluorescent gratings have been obtained and quantitatively compared to both scanning electron micrographs and conventional optical micrographs of the same structures. The sharpness of the near‐field scans indicates resolution of <100 nm.
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07.60.Pb Conventional optical microscopes
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