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22 Sep 1986

Volume 49, Issue 12, pp. 681-745


Timing jitter in mode‐locked and gain‐switched InGaAsP injection lasers

A. J. Taylor, J. M. Wiesenfeld, G. Eisenstein, and R. S. Tucker

Appl. Phys. Lett. 49, 681 (1986); http://dx.doi.org/10.1063/1.97566 (3 pages) | Cited 33 times

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Pulse‐to‐pulse timing jitter in both mode‐locked and gain‐switched InGaAsP injection lasers is characterized. The measured jitter is less than 1 ps and is significantly less than the jitter reported for other laser systems. It is due almost entirely to the jitter in the frequency synthesizer and amplifier that electrically drive the injection laser.
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42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

High‐order (ν>10) eigenmodes in ten‐stripe gain‐guided diode laser arrays

G. R. Hadley, J. P. Hohimer, and A. Owyoung

Appl. Phys. Lett. 49, 684 (1986); http://dx.doi.org/10.1063/1.97567 (3 pages) | Cited 10 times

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We present a numerical model for a ten‐stripe gain‐guided diode laser array that predicts eigenmodes of order greater than the number of stripes. The existence of such high‐order eigenmodes is confirmed by observing the near‐ and far‐field emission patterns from free‐running single‐frequency gain‐guided arrays operating near threshold. Injection seeding provides an effective tool for selectively exciting these high‐order eigenmodes, including lower‐gain modes which would not normally be observed in a free‐running array.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Ah General laser theory
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Power‐dependent coupling and fast switching in distributed coupling to ZnO waveguides

R. M. Fortenberry, R. Moshrefzadeh, G. Assanto, Xu Mai, E. M. Wright, C. T. Seaton, and G. I. Stegeman

Appl. Phys. Lett. 49, 687 (1986); http://dx.doi.org/10.1063/1.97568 (3 pages) | Cited 14 times

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A 20‐fold decrease in the efficiency of prism coupling into low‐loss ZnO waveguides was found with increasing incident power at 0.532 μm. All‐optical switching in the temporal envelope of 10 ns laser pulses was interpreted theoretically in terms of an absorptive nonlinearity with a relaxation time much slower than the pulse width.
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42.79.Gn Optical waveguides and couplers
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.82.-m Integrated optics
75.20.Ck Nonmetals

Resonant injection quantum well lasers

J. N. Schulman

Appl. Phys. Lett. 49, 690 (1986); http://dx.doi.org/10.1063/1.97569 (3 pages) | Cited 4 times

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The efficient capture of injected electrons by quantum wells is important for minimizing the threshold currents of quantum well lasers. This is especially true for thin wells, where the electrons may not spend enough time in the wells to lose energy and fall into the confined lasing level. Since the band‐gap enhancement is greatest for thin wells, it is highly desirable to design structures for which the electron density in the well region is as high as possible, thus maximizing the probability of scattering and decay into the lasing level. Here, we investigate theoretically several related structures for which the incoming electrons encounter a resonance in the quantum well region, producing an enhanced electron density there. This is achieved by adding a thin high alloy concentration barrier adjacent to the well, and by choosing the alloy concentrations outside the barrier to line up the incoming electrons with a higher resonance in the well. Calculations for the GaAs‐GaAlAs case demonstrating the effect are shown. An order of magnitude increase in the electron density in the well, as compared to the simple quantum well, is achieved.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission

Identification of Rayleigh and ‘‘breathing’’ modes for a cylindrical wire

I. Molinero, M. de Billy, and G. Quentin

Appl. Phys. Lett. 49, 693 (1986); http://dx.doi.org/10.1063/1.97570 (3 pages) | Cited 2 times

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We describe an experimental confirmation of the existence of Rayleigh and ‘‘breathing’’ modes in the case of an infinite elastic wire immersed in water. The resonance isolation and identification method initiated by G. Maze and J. Ripoche [Rev. Phys. Appl. 18, 319 (1983)] is used. The different parameters related to the use of this method are adjusted to take into account the dimensions of the target and the attenuation of each mode. The polar diagrams of the amplitude of the resonating part of the received signal confirm the existence of (n,1) and (0,1) modes.
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43.20.Ks Standing waves, resonance, normal modes
43.20.Fn Scattering of acoustic waves
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

Effects of helium upon electron beam excitation of N+2 at 391.4 and 427.8 nm

M. L. Brake, R. M. Gilgenbach, R. F. Lucey, K. Pearce, T. Repetti, and P. E. Sojka

Appl. Phys. Lett. 49, 696 (1986); http://dx.doi.org/10.1063/1.97571 (3 pages) | Cited 3 times

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Relativistic electron beam interactions with very small ratios of nitrogen to helium (10−1–10−4) have been found to produce extremely large N+2(B2Σ+u–X2Σ+g) intensities at 391.4 and 427.8 nm, compared to line intensities originating from helium. These results occurred in the total pressure regime of 0.1–500 Torr. The pressure scaling results presented here are inconsistent with previously proposed kinetic mechanisms for the N+2 laser pumped by helium. With a simple model of the chemical kinetics, we show that this effect is due to the collisional transfer of energy between excited states of helium atoms and the ground state of N+2.
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42.55.-f Lasers
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.40.Mj Particle beam interactions in plasmas
34.80.Gs Molecular excitation and ionization

Fluorine‐enhanced photo‐oxidation of silicon under ArF excimer laser irradiation in an O2+NF3 gas mixture

M. Morita, S. Aritome, T. Tanaka, and M. Hirose

Appl. Phys. Lett. 49, 699 (1986); http://dx.doi.org/10.1063/1.97572 (2 pages) | Cited 5 times

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We have studied fluorine‐enhanced oxidation of silicon in an O2+NF3 gas mixture under ArF excimer laser (193 nm) irradiation. An oxide layer of more than 60 Å can be grown even at 400 °C for 20 min at NF3 gas concentrations less than 0.5%. A considerable enhancement of the oxidation rate by laser irradiation originates in the catalytic effect of fluorine radicals produced by photodissociation of NF3 molecules not only in the gas phase, but also on the oxide surface.
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81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.50.-m Photochemistry
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Dose‐dependent mixing of AlAs‐GaAs superlattices by Si ion implantation

T. Venkatesan, S. A. Schwarz, D. M. Hwang, R. Bhat, M. Koza, H. W. Yoon, P. Mei, Y. Arakawa, and A. Yariv

Appl. Phys. Lett. 49, 701 (1986); http://dx.doi.org/10.1063/1.97635 (3 pages) | Cited 55 times

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The effects of Si ion implantation and annealing on AlAs‐GaAs superlattices are examined with secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry (RBS), and transmission electron microscopy (TEM). Samples implanted with 180 keV 28Si+ of doses ranging from 3×1013 to 3×1015 cm−2 are examined before and after a 3‐h 850 °C anneal. Both the TEM and RBS channeling data indicate the formation of a heavily damaged surface layer where diffusion of Al is inhibited even after thermal annealing. After annealing, however, significant mixing is observed at depths well beyond the implant range. Depth‐dependent diffusion lengths of Al and Si are derived from the SIMS data. The diffusion coefficient of Si is markedly reduced in the unmixed regions with both the Si and Al concentrations exhibiting abrupt forward and rear diffusion fronts.
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61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities
61.72.uf Ge and Si
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

In situ grown‐in selective contacts to n‐i‐p‐i doping superlattice crystals using molecular beam epitaxial growth through a shadow mask

G. H. Döhler, G. Hasnain, and J. N. Miller

Appl. Phys. Lett. 49, 704 (1986); http://dx.doi.org/10.1063/1.97573 (3 pages) | Cited 31 times

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Highly selective n‐ and p‐type contacts to GaAs doping superlattices have been achieved by using molecular beam epitaxial growth through a silicon shadow mask to form interdigital grown‐in contacts. Low contact resistance, excellent diode characteristics, and efficient lateral injection electroluminescence are obtained.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.60.Fi Electroluminescence
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Cg Contact resistance, contact potential

Observation of novel steplike structure in the photocurrent and dark current of a superlattice: Charge collection by successive depletion of quantum wells

J. Allam, F. Capasso, M. B. Panish, and A. L. Hutchinson

Appl. Phys. Lett. 49, 707 (1986); http://dx.doi.org/10.1063/1.97574 (3 pages) | Cited 7 times

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We have observed novel manifestations of superlattice properties in a Ga0.47In0.53As/InP quantum well photodiode structure grown by gas source molecular beam epitaxy, evident as multiple steps in the reverse bias photocurrent and dark current. This striking effect is explained in terms of depletion of successive quantum wells as the reverse bias field is increased, while the diffusion of carriers generated in the undepleted region is suppressed by localization within the wells. As the electric field punches through into each well the carriers photogenerated and thermally generated in that well are collected by the field, while carriers generated in the undepleted wells remain localized and cannot contribute to the current. This causes a steplike increase in the photocurrent and the dark current.
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72.40.+w Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Dw Photodiodes; phototransistors; photoresistors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Deformation‐free overgrowth of reactive ion beam etched submicron structures in InP by liquid phase epitaxy

M. Schilling and K. Wünstel

Appl. Phys. Lett. 49, 710 (1986); http://dx.doi.org/10.1063/1.97575 (3 pages) | Cited 6 times

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Submicron grating patterns written by electron beam lithography are transferred into InP substrates by reactive ion beam etching (RIBE) using an Ar/O2 gas mixture. Trapezoidal grating structures with a depth of 0.15 μm are generated. The influence of the preheating cycle prior to liquid phase epitaxy (LPE) on the grating shape is investigated as a function of different cover materials. We obtain deformation‐free LPE overgrowth of the dry etched corrugations applying the GaAs cover technique. In contrast to wet chemically etched gratings identical grating profiles are formed in different crystallographic directions by RIBE and successfully overgrown by LPE.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Growth and properties of dilute magnetic semiconductor superlattices containing Hg1−xMnxTe

K. A. Harris, S. Hwang, Y. Lansari, J. W. Cook, and J. F. Schetzina

Appl. Phys. Lett. 49, 713 (1986); http://dx.doi.org/10.1063/1.97576 (3 pages) | Cited 7 times

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We report details of the successful growth by molecular beam epitaxy of superlattices containing alternating layers of Hg1−xMnxTe and HgTe. These structures are the first superlattices containing layers of a mercury‐based dilute magnetic semiconductor (Hg1−xMnxTe ) to be grown by any thin‐film technique. The optical and electrical properties of these new magnetic multilayers are discussed.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
75.20.Ck Nonmetals
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Large area, uniform silicon‐on‐insulator using a buried layer of oxidized porous silicon

J. D. Benjamin, J. M. Keen, A. G. Cullis, B. Innes, and N. G. Chew

Appl. Phys. Lett. 49, 716 (1986); http://dx.doi.org/10.1063/1.97577 (3 pages) | Cited 4 times

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We describe a process for the formation of silicon‐on‐insulator structures by selective anodization of a buried p‐type layer to form porous silicon which is then oxidized. A buried n‐type layer ensures that the flow of the anodizing current, and hence the formation of the porous silicon layer, is directed laterally rather than downwards. By this means we have produced defect‐free, 200‐nm‐thick and 40‐μm‐wide silicon strips extending across the full width of device wafers and resting on 800 nm of silicon dioxide. This approach, which shows considerable promise for further enhancement, gives continuous large areas of high quality isolated silicon with minimal wafer warpage compared with most existing silicon‐on‐silicon dioxide technologies.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Mr Semiconductor-electrolyte contacts
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
81.65.-b Surface treatments

Optoelectronic and structural properties of sputter etched surfaces of InP

D. J. Olego, R. Schachter, M. Viscogliosi, and L. A. Bunz

Appl. Phys. Lett. 49, 719 (1986); http://dx.doi.org/10.1063/1.97578 (3 pages) | Cited 7 times

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The effects of sputter etching on the optoelectronic and structural properties of 〈100〉 surfaces of InP were investigated by photoluminescence (PL) and Raman scattering in conjunction with capacitance‐voltage determinations of the density of surface state Nss. The surfaces were etched in an Ar+ plasma for 5 min with plasma power densities D up to 0.1 W cm−2. The near band edge PL intensity shows a striking dependence on D. Below the threshold for macroscopic structural damage, the behavior of the PL and the Nss are independent of each other. A movement of the Fermi level at the surface is invoked in order to explain the PL response.
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81.40.Tv Optical and dielectric properties related to treatment conditions
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.30.Hv Other nonmetallic inorganics
81.65.-b Surface treatments

Assessment of lattice relaxation effects in transitions from mobility gap states in hydrogenated amorphous silicon using transient photocapacitance techniques

A. V. Gelatos, J. D. Cohen, and J. P. Harbison

Appl. Phys. Lett. 49, 722 (1986); http://dx.doi.org/10.1063/1.97579 (3 pages) | Cited 25 times

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We have employed junction photocapacitance and thermal transient capacitance measurements in n‐type doped hydrogenated amorphous silicon and have identified, within each of a series of samples, the optical transitions: D−→D0+e and D0→D++e, and the thermal transitions: D−→D0+e and D+→D0+h, where D−, D0, and D+ denote the three charge states of Si dangling bond defect. We have also correlated the optical and thermal transitions associated with the valence bandtail states. Lattice relaxation energies are found to be less than 0.1 eV for the dangling bond transitions, but as large as 0.5–0.6 eV for the valence bandtail states. We also determined a value of Ueff for the D−/D0 splitting of 0.24±0.07 eV.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Ng Disordered solids

Time‐of‐flight studies of minority‐carrier diffusion in AlxGa1−xAs homojunctions

R. K. Ahrenkiel, D. J. Dunlavy, H. C. Hamaker, R. T. Green, C. R. Lewis, R. E. Hayes, and H. Fardi

Appl. Phys. Lett. 49, 725 (1986); http://dx.doi.org/10.1063/1.97580 (3 pages) | Cited 7 times

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A novel time‐of‐flight technique has been developed for simultaneously measuring minority‐carrier lifetime and diffusivity in homojunctions. A pulsed dye laser produces electron‐hole pairs near the front surface of the device. A delay occurs before the onset of photocurrent due to the diffusion transit time of minority carriers to the junction. An analysis of this effect by both a simplified analytical model and a computer simulation gives similar results for the current as a function of time. A fit of the theory to experimental data on Al0.25Ga0.75As n/p homojunctions produces minority‐carrier lifetime, diffusivity, and diffusion length.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen

S. A. Ringel, H. C. Chien, and S. Ashok

Appl. Phys. Lett. 49, 728 (1986); http://dx.doi.org/10.1063/1.97581 (3 pages) | Cited 8 times

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Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm−2). Low‐energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p‐type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.
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61.80.Jh Ion radiation effects
73.30.+y Surface double layers, Schottky barriers, and work functions
61.72.uf Ge and Si
81.65.-b Surface treatments

Large valence‐band nonparabolicity and tailorable hole masses in strained‐layer superlattices

G. C. Osbourn, J. E. Schirber, T. J. Drummond, L. R. Dawson, B. L. Doyle, and I. J. Fritz

Appl. Phys. Lett. 49, 731 (1986); http://dx.doi.org/10.1063/1.97582 (3 pages) | Cited 29 times

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The two‐dimensional, strain‐induced light‐hole masses in InGaAs strained‐layer superlattices are shown to have large nonparabolicity contributions. Calculated hole masses agree with experimental values to within the 20% scatter. The results indicate that these tailorable hole masses could be useful tools for studying two‐dimensional valence transport.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Exciton effects in the index of refraction of multiple quantum wells and superlattices

K. B. Kahen and J. P. Leburton

Appl. Phys. Lett. 49, 734 (1986); http://dx.doi.org/10.1063/1.97583 (3 pages) | Cited 18 times

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We present theoretical calculations of the index of refraction of multiple quantum wells and superlattices. The model incorporate both the bound and continuum exciton contributions for the Γ region transitions. In addition, the electronic band structure model has both superlattice and bulk alloy properties. Our results indicate that large light‐hole masses, i.e., mlh∼0.23, produced by band mixing effects, are required to account for the experimental data. Furthermore, it is shown that superlattice effects rapidly decrease for energies greater than the confining potential barriers. Overall, the theoretical results are in very good agreement with the experimental data and show the importance of including exciton effects in the index of refraction.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.35.-y Excitons and related phenomena
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Junction leakage in titanium self‐aligned silicide devices

Jun Amano, K. Nauka, M. P. Scott, J. E. Turner, and Rick Tsai

Appl. Phys. Lett. 49, 737 (1986); http://dx.doi.org/10.1063/1.97584 (3 pages) | Cited 23 times

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Successful utilization of a titanium self‐aligned silicide (salicide) process for reproducible device fabrication with high yield requires junction leakage due to the silicide process to be minimized. The microstructure and microchemistry of titanium salicide shallow junction diodes were studied and correlated with junction leakage. The direct correlation between junction leakage and junction structure was established by using several analytical techniques. The main cause of large leakage current was found to be a loss of p+/n junction under the titanium silicide layer and formation of titanium silicide/n‐silicon Schottky barrier contact at the perimeter of the diodes. Process parameters for low leakage titanium silicide/p+/n diode fabrication were also established.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Relativistic trajectory equations for charged particles in general orthogonal curvilinear coordinates

M. Szilagyi

Appl. Phys. Lett. 49, 740 (1986); http://dx.doi.org/10.1063/1.97533 (3 pages)

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The relativistic trajectory equations are given in orthogonal curvilinear coordinates for charged particles moving in arbitrary electrostatic and magnetic fields without restrictions. The trajectory equations for Cartesian and cylindrical coordinates are presented as special cases.
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41.60.-m Radiation by moving charges
41.75.Ht Relativistic electron and positron beams
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
FREE

Comment on ‘‘Various phase transitions and changes in surface morphology of crystalline silicon induced by 4–260 ps pulses of 1 μm radiation’’ [Appl. Phys. Lett. 45, 80 (1984)]

H. M. van Driel and A. L. Smirl

Appl. Phys. Lett. 49, 743 (1986); http://dx.doi.org/10.1063/1.97534 (2 pages)

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Abstract Unavailable
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68.35.Rh Phase transitions and critical phenomena
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.40.Tv Optical and dielectric properties related to treatment conditions
FREE

Erratum: Layer intermixing in HgTe‐CdTe superlattices [Appl. Phys. Lett. 48, 1588 (1986)]

David K. Arch, J. L. Staudenmann, and J. P. Faurie

Appl. Phys. Lett. 49, 745 (1986); http://dx.doi.org/10.1063/1.97639 (1 page)

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Abstract Unavailable
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68.35.Fx Diffusion; interface formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
66.30.Ny Chemical interdiffusion; diffusion barriers
85.60.-q Optoelectronic devices
99.10.Cd Errata
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