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29 Sep 1986

Volume 49, Issue 13, pp. 749-830

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Ultrafast all‐optical gate with subpicosecond ON and OFF response time

D. Hulin, A. Mysyrowicz, A. Antonetti, A. Migus, W. T. Masselink, H. Morkoç, H. M. Gibbs, and N. Peyghambarian

Appl. Phys. Lett. 49, 749 (1986); http://dx.doi.org/10.1063/1.97535 (3 pages) | Cited 45 times

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An all‐optical logic gate consisting of a GaAs‐GaAlAs multiple quantum well structure inserted in a 1.3‐μm‐thick Fabry–Perot cavity is demonstrated to perform with subpicosecond on and off switching time. The use of a purely optical field effect allows for a recovery time as rapid as the switch‐on time.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
85.30.Hi Surface barrier, boundary, and point contact devices

Nonlinear nonreciprocity in a coherent mismatched directional coupler

S. Trillo and S. Wabnitz

Appl. Phys. Lett. 49, 752 (1986); http://dx.doi.org/10.1063/1.97536 (3 pages) | Cited 35 times

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See Also: Erratum

Show Abstract
The analytical solution is given for the nonlinear propagation in a linearly mismatched directional coupler taking into account an arbitrary nonuniform nonlinearity. The effect of mismatching which causes nonreciprocal nonlinear switching of the device is analyzed in detail.
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63.10.+a General theory
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Nonlinear guided waves coupled nonlinearly in a planar GaAs/GaAlAs multiple quantum well structure

M. Cada, R. C. Gauthier, B. E. Paton, and J. Chrostowski

Appl. Phys. Lett. 49, 755 (1986); http://dx.doi.org/10.1063/1.97537 (3 pages) | Cited 20 times

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A nonlinear guided‐wave concept and nonlinear coupled‐wave equations are used to study numerically the coupling characteristics of two planar waveguides in a GaAs/GaAlAs multiple quantum well structure with self‐defocusing nonlinearities. Both the mode‐intensity‐dependent critical power and the coupling length are calculated for the first time using the nonlinear field distributions. An optically controlled modulation/switching behavior is predicted.
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42.79.Gn Optical waveguides and couplers
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.82.-m Integrated optics

High‐efficiency carrier collection and stimulated emission in thin (50 Å) pseudomorphic InxGa1−xAs quantum wells

N. G. Anderson, Y. C. Lo, and R. M. Kolbas

Appl. Phys. Lett. 49, 758 (1986); http://dx.doi.org/10.1063/1.97538 (3 pages) | Cited 14 times

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Efficient collection of photoexcited electrons and holes by thin, strained quantum wells is demonstrated in an In0.16Ga0.84As‐GaAs pseudomorphic quantum well heterostructure laser. The undoped laser structure, which was grown by molecular beam epitaxy, consists of five 50 Å pseudomorphic In0.16Ga0.84As quantum wells separated by thick (700 Å), unstrained GaAs confining layers. Despite the fact that the quantum wells are undoped, decoupled, and of dimensions which are known to be too small to provide efficient carrier collection in unstrained AlxGa1−xAs‐GaAs structures, 77 K photopumped laser operation is achieved on quantum well transitions (λ∼870 nm) at a threshold excitation intensity of 9.3×103 W/cm2. At photoexcitation intensities even as high as five times the threshold value, spontaneous emission from the quantum well is more than 700 times as intense as the confining layer luminescence. Based upon these photoluminescence results and some simple physical arguments, we suggest that carrier collection is enhanced in pseudomorphic quantum wells.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission
78.40.Fy Semiconductors

Parametric amplification sampling spectroscopy of luminescence at the subpicosecond time scale in the 1–1.6 μm spectral range

D. Hulin, A. Migus, A. Antonetti, I. Ledoux, J. Badan, J. L. Oudar, and J. Zyss

Appl. Phys. Lett. 49, 761 (1986); http://dx.doi.org/10.1063/1.97539 (3 pages) | Cited 16 times

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A new method for time‐resolved luminescence spectroscopy with subpicosecond resolution is proposed in the 1–1.6 μm spectral range, using parametric amplification in a highly nonlinear organic crystal. This technique is used to characterize the luminescence of an infrared dye and of an InGaAs‐InAlAs multiple quantum well structure.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.55.-m Photoluminescence, properties and materials
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques

Low‐loss electron images of uncoated photoresist in the scanning electron microscope

Oliver C. Wells

Appl. Phys. Lett. 49, 764 (1986); http://dx.doi.org/10.1063/1.97540 (3 pages) | Cited 9 times

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Low voltage scanning electron microscopy is an important part of microelectronic inspection technique. This makes it possible to examine devices without changing the electrical properties, and to examine nonconducting samples such as photoresist without the use of a surface metal layer. The secondary electron imaging method suffers, however, from the difficulty that the image can be spoiled by slight charging of the specimen by the incident electron beam. This problem can be solved by the use of the low‐loss electron image.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
85.40.Bh Computer-aided design of microcircuits; layout and modeling
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Electrostatic lenses with very small spherical aberration

M. Szilagyi

Appl. Phys. Lett. 49, 767 (1986); http://dx.doi.org/10.1063/1.97541 (3 pages) | Cited 3 times

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A class of electrostatic lenses with extremely low spherical aberration is proposed. The axial potential distribution of these lenses has an asymmetric bell‐shaped form with a lower potential on the image side. A lens with Cso∞/fo=0.51 is presented as an example. The maximum required electrode voltage is only five times larger than the initial accelerating voltage. At 5 mrad acceptance half‐angle, 51 mm focal length, and magnification M=−3.3 the radius of the spherical aberration disk is 6 nm.
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41.75.Fr Electron and positron beams
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
41.20.Cv Electrostatics; Poisson and Laplace equations, boundary-value problems
41.20.Gz Magnetostatics; magnetic shielding, magnetic induction, boundary-value problems

Wavelength dependence of laser‐induced sputtering from the (111) surface of BaF2

J. Reif, H. Fallgren, W. E. Cooke, and E. Matthias

Appl. Phys. Lett. 49, 770 (1986); http://dx.doi.org/10.1063/1.97542 (3 pages) | Cited 12 times

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Using blue tunable pulse laser radiation of low fluence, we have investigated laser‐induced sputtering from cleaved BaF2 (111) surfaces under ultrahigh vacuum conditions. Time correlated with the laser pulses the positive ions Ba+, Ba++, (BaF)+ and F+ were observed. Practically no negative ions were found. Neutral atomic fluorine (F 0) was desorbed abundantly. A pulse correlation of F 0 as well as the relative amount of F 0 and F+ could not be established at this stage. The emission yield of all positive ions as well as of F 0 was strongly wavelength dependent and showed a broad resonance around 2.9 eV.
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79.20.Ds Laser-beam impact phenomena

Annealing behavior of Si in ion‐implanted α‐Ti

J. Räisänen and J. Keinonen

Appl. Phys. Lett. 49, 773 (1986); http://dx.doi.org/10.1063/1.97543 (3 pages) | Cited 10 times

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The time evolution of the silicon concentration profiles in ion‐implanted polycrystalline α‐Ti has been studied in the temperature range 650–800 °C. Diffusion couples were created by ion implantation. The time‐dependent concentration profiles were monitored by the use of the nuclear resonance broadening technique through the 30Si(p,γ)31P reaction. The values of 1.09±0.18 eV for the activation energy and (4.4±404.0)×10−7 cm2/s for the frequency factor were obtained. The solubilities of Si in Ti are reported. The present result is discussed in the framework of the Ti silicide formation.
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61.72.Bb Theories and models of crystal defects
61.72.up Other materials
66.30.J- Diffusion of impurities
64.75.-g Phase equilibria

Cross‐sectional transmission electron microscope observation of step‐band formation on GexSi1−x(111) vicinal surfaces

Toru Tatsumi and Naoaki Aizaki

Appl. Phys. Lett. 49, 776 (1986); http://dx.doi.org/10.1063/1.97544 (3 pages) | Cited 1 time

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The Ge0.1Si0.9 surface and the Ge0.1Si0.9/Si interface on the Si(111) 4° off substrate were observed by a cross‐sectional transmission electron microscope. The Ge0.1Si0.9 surface grown at 750 °C was composed of alternate planes of (111) terraces and step bands, whose widths in the 〈112〉 direction were about 450 and 150 Å, respectively. A step band was formed by steps several monolayers high. On the other hand, the Ge0.1Si0.9/Si interface was very flat and the step bands were not formed in the Si on Si homoepitaxy process at 750 °C.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology

Extension of bearing endurance life by ion implantation

Motohisa Hirano and Shojiro Miyake

Appl. Phys. Lett. 49, 779 (1986); http://dx.doi.org/10.1063/1.97545 (3 pages) | Cited 6 times

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The oscillatory characteristics of ion‐implanted ball bearings are described. N‐implanted bearings are found to have lower starting torque and longer endurance life both in a vacuum as well as in air than unimplanted bearings. Typical starting torque in air can be reduced by 0.8 thus extending bearing life from 104 to 106 cycles. The effect of ion implantation is discussed with respect to the mechanism of fretting wear in ball bearings subjected to relatively small‐angle oscillatory motion.
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62.20.Qp Friction, tribology, and hardness
61.72.up Other materials
81.40.Pq Friction, lubrication, and wear

Structural stability and selectivity of thin epitaxial semiconductors

A. A. Mbaye, Alex Zunger, and D. M. Wood

Appl. Phys. Lett. 49, 782 (1986); http://dx.doi.org/10.1063/1.97634 (3 pages) | Cited 22 times

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It is shown how the availability of structural degrees of freedom in various ternary AnB4−nC4 adamantine semiconductors can lead to their energetic stabilization when grown epitaxially, and how the substrate strain can preferentially stabilize one structure over another even when the two are equally stable (or unstable) in bulk form.
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68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.60.Bs Mechanical and acoustical properties

Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxy

Atsutoshi Doi, Yoshinobu Aoyagi, and Susumu Namba

Appl. Phys. Lett. 49, 785 (1986); http://dx.doi.org/10.1063/1.97546 (3 pages) | Cited 36 times

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Growth of GaAs by repeated deposition of single atomic layers using the switched laser metalorganic vapor phase epitaxy technique is reported. Suspension of Ga deposition at 100% coverage is an essential part of the growth mechanism for stepwise epitaxy—the ideal atomic layer epitaxy. This is achieved by suppressing pyrolytic decomposition and favoring photocatalytic decomposition of trimethylgallium (TMG). A growth model for stepwise monolayer epitaxy is proposed which suggests that photocatalytic decomposition of TMG occurs only at surface As atoms and not at Ga atoms.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Effect of group V/III flux ratio on deep electron traps in AlxGa1−xAs (x=0.7) grown by molecular beam epitaxy

T. Hayakawa, M. Kondo, T. Suyama, K. Takahashi, S. Yamamoto, S. Yano, and T. Hijikata

Appl. Phys. Lett. 49, 788 (1986); http://dx.doi.org/10.1063/1.97547 (3 pages) | Cited 12 times

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The effect of group V/III flux ratio γ on deep electron traps in AlxGa1−xAs (x=0.7) grown by molecular beam epitaxy at 720 °C has been studied by deep level transient spectroscopy. The photoluminescence characteristics of a GaAs single quantum well sandwiched by Al0.7Ga0.3As are determined by the electron traps denoted as E4–E6(E6′) in Al0.7Ga0.3As with the activation energies of 0.77 eV (E4), 0.72 eV (E5), 0.90 eV (E6), and 1.00 eV (E6′). The concentrations of these traps are minimized to the order of 1013 cm−3 at γ∼2 in spite of high Al content.
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78.40.Fy Semiconductors

Steady‐state photocarrier grating technique for diffusion length measurement in photoconductive insulators

D. Ritter, E. Zeldov, and K. Weiser

Appl. Phys. Lett. 49, 791 (1986); http://dx.doi.org/10.1063/1.97548 (3 pages) | Cited 79 times

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A new simple technique for the determination of the diffusion length in photoconductive insulators is presented. A steady‐state photocarrier grating is created by two interfering laser beams, and the magnitude of the secondary photocurrent perpendicular to the grating fringes is measured. The measurement is then repeated when the two beams are incoherent. From a determination of the two photocurrents as a function of grating period the diffusion length of the photocarriers can be obtained. The method can yield accurate results to 5% of the laser wavelength.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance
72.40.+w Photoconduction and photovoltaic effects
73.61.Ng Insulators

Optical characterization of InGaAs‐InAlAs strained‐layer superlattices grown by molecular beam epitaxy

Kenichi Nishi, Kazuyuki Hirose, and Takashi Mizutani

Appl. Phys. Lett. 49, 794 (1986); http://dx.doi.org/10.1063/1.97549 (3 pages) | Cited 16 times

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InGaAs‐InAlAs strained‐layer superlattices, with both controlled strain magnitude and direction in the narrower gap layers, were grown by molecular beam epitaxy. Exciton related peaks and steplike structures in transmission spectra were clearly observed even at room temperature. The close agreement of these observed peak positions with theoretical calculations indicates that heavy‐hole and light‐hole level reversal was attained in the tensile‐strained narrower gap layers.
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75.20.Ck Nonmetals
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.Nq Composition and phase identification
81.40.Tv Optical and dielectric properties related to treatment conditions

Growth of Cd1−xZnxTe by molecular beam epitaxy

R. D. Feldman, R. F. Austin, A. H. Dayem, and E. H. Westerwick

Appl. Phys. Lett. 49, 797 (1986); http://dx.doi.org/10.1063/1.97550 (3 pages) | Cited 32 times

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Cd1−xZnxTe has been grown on GaAs substrates for compositions from x=0 to x=1. Binaries are shown to be of high quality, but x‐ray rocking curve half‐widths are extremely broad for most ternary compositions. Attempts to modify the interface yield only modest and uneven improvement in rocking curve half‐widths. The poor quality appears to be due to a phase separation.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Nq Composition and phase identification

Interaction of low‐energy implanted atomic H with slow and fast diffusing metallic impurities in Si

Ranbir Singh, S. J. Fonash, and A. Rohatgi

Appl. Phys. Lett. 49, 800 (1986); http://dx.doi.org/10.1063/1.97551 (3 pages) | Cited 14 times

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The interaction of hydrogen, injected into silicon using low‐energy ion bombardment, with slow (Ti and V) and fast (Cr and Au) diffusing impurities was investigated. It was found that this H ion bombardment of the Si surface was effective in reducing the electrically active concentration of only the fast diffusing impurities. The results are explained by damage enhanced diffusivity and surface gettering of the fast diffusing impurities.
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66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.80.Jh Ion radiation effects
61.72.Yx Interaction between different crystal defects; gettering effect

Excimer laser projection etching of GaAs

Peter D. Brewer, David McClure, and R. M. Osgood

Appl. Phys. Lett. 49, 803 (1986); http://dx.doi.org/10.1063/1.97552 (3 pages) | Cited 20 times

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We report the projection dry etching of GaAs using an excimer laser and HBr etching gas. Present experiments use photochemically generated reactants, which are spatially confined by gas phase collisions. Pattern transfer is accomplished by 1:1 imaging of the excimer laser light directly onto a GaAs substrate in a reaction cell filled with HBr gas. Resolution down to the laser beam image size is achieved through the addition of buffer gases.
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81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena

Far‐infrared study of alloying in the HgTe‐CdTe superlattice

S. Perkowitz, D. Rajavel, I. K. Sou, J. Reno, J. P. Faurie, C. E. Jones, T. Casselman, K. A. Harris, J. W. Cook, and J. F. Schetzina

Appl. Phys. Lett. 49, 806 (1986); http://dx.doi.org/10.1063/1.97553 (3 pages) | Cited 18 times

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The far‐infrared reflectivity spectra of three HgTe‐CdTe superlattices from two sources [HgTe/CdTe thicknesses (Å/Å): 64/26, 7/35, 32/57] have been measured at 300, 77, and 6 K. Analysis of transverse optical phonon structure between 80 and 180 cm−1 with different alloying models shows that the first of these superlattices contains HgTe and CdTe with no evidence of significant mixing, whereas the others contain HgTe and homogeneous Hg1−xCdxTe. An earlier study of the HgTe‐CdTe band gap also indicated homogeneous alloying. The reflectivity data were analyzed with a superlattice dielectric function which is shown to be valid in the far infrared.
Show PACS
75.20.Ck Nonmetals
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.30.Hv Other nonmetallic inorganics
81.40.Tv Optical and dielectric properties related to treatment conditions

Ge0.6Si0.4 rib waveguide avalanche photodetectors for 1.3 μm operation

H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, and J. C. Bean

Appl. Phys. Lett. 49, 809 (1986); http://dx.doi.org/10.1063/1.97554 (3 pages) | Cited 34 times

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Performance of strained‐layer superlattice Ge0.6Si0.4 waveguide avalanche photodetectors is evaluated for optical fiber applications at 1.3 μm. These devices are grown on Si substrates by molecular beam epitaxy. Waveguiding is accomplished by means of a 1.5–1.8‐μm‐thick Si rib waveguide which provides an effective index step of δn=8×10−3. The detector response bandwidth exceeds 8 GHz at a gain of 6. A receiver sensitivity of ηmath=−29.4 dBm has been obtained at the data rate of 800 Mb/s with the corresponding error‐free transmission over 45 km of single mode fiber.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Gn Optical waveguides and couplers
42.81.Wg Other fiber-optical devices

Direct observation of effective mass filtering in InGaAs/InP superlattices

D. V. Lang, A. M. Sergent, M. B. Panish, and H. Temkin

Appl. Phys. Lett. 49, 812 (1986); http://dx.doi.org/10.1063/1.97555 (3 pages) | Cited 15 times

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By making transport measurements on InGaAs/InP superlattices we have been able to demonstrate a regime of rapid electron tunneling perpendicular to the layers in the presence of quantum hole localization, i.e., effective mass filtering. The experiments were conducted on multiple quantum well and single quantum well samples in the form of p+‐n junctions and involved low‐temperature photoinduced capacitance and ac conductivity measurements, which easily resolved the 205 Å superlattice period, and deep level transient spectroscopy observations of hole trapping in 60–80 Å quantum wells.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing

N. Chand, R. People, F. A. Baiocchi, K. W. Wecht, and A. Y. Cho

Appl. Phys. Lett. 49, 815 (1986); http://dx.doi.org/10.1063/1.97556 (3 pages) | Cited 98 times

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Rapid thermal annealing (RTA) has been found to significantly improve the crystalline quality of epitaxial GaAs grown on Si (100) substrates. After RTA at 900 °C for 10 s, the percentage of displaced atoms near the GaAs/Si interface, as estimated by Rutherford backscattering/channeling, decreased from 20 to 7%. Photoluminescence intensity (PL) after RTA increased significantly (as much as sixfold in some cases), with the actual increase varying from sample to sample and with annealing conditions. In some cases, the PL intensity after RTA was comparable to the PL intensity obtained from GaAs grown on GaAs substrate under similar conditions. Rapid thermal annealing at 940 °C resulted in a degradation of the PL intensity as compared to annealing at 900 °C. Also, the PL peaks after RTA were found to shift to lower energies by 2–5 meV at low temperatures.
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61.72.Bb Theories and models of crystal defects
78.40.Fy Semiconductors
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.35.Dv Composition, segregation; defects and impurities

In/GaAs reaction: Effect of an intervening oxide layer

J. Ding, J. Washburn, T. Sands, and V. G. Keramidas

Appl. Phys. Lett. 49, 818 (1986); http://dx.doi.org/10.1063/1.97557 (3 pages) | Cited 14 times

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The effects of a thin (∼1.3 nm) intervening native GaAs oxide interface layer on the In/GaAs reaction have been investigated by comparing the reactions of In on GaAs substrates with the native oxide present or desorbed. Transmission electron microscopy of cross‐sectional samples reveals that the thin native oxide layer, when present, disrupts the In/GaAs orientation relationship in as‐deposited samples and prevents an extensive reaction between In and GaAs at 350 °C. These data also show that the In/GaAs reaction at 350 °C proceeds by dissolution of the GaAs substrate into the molten In followed by the subsequent nucleation and growth of epitaxial In1−xGaxAs particles with x≤0.2 or x≥0.8 only, indicating immiscibility. The In1−xGaxAs/GaAs interfaces are found to be structurally and compositionally abrupt to within ∼3 nm. The effects of the interfacial native oxide on the In/GaAs reaction and the suggested presence of an InAs‐GaAs miscibility gap have implications for the fabrication of In/GaAs ohmic contacts by thermal reaction.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Integrated quantum well self‐electro‐optic effect device: 2×2 array of optically bistable switches

D. A. B. Miller, J. E. Henry, A. C. Gossard, and J. H. English

Appl. Phys. Lett. 49, 821 (1986); http://dx.doi.org/10.1063/1.97558 (3 pages) | Cited 39 times

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We demonstrate 2×2 arrays of optically bistable devices with very uniform optical characteristics. They are fabricated from an integrated self‐electro‐optic effect device structure consisting of a quantum well p‐i‐n diode grown in series with a load photodiode. Operating power can be optically controlled with a separate beam between ∼40 pW and >470 μW with associated switching times of ∼10 s and <2 μs.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.82.-m Integrated optics
42.65.Pc Optical bistability, multistability, and switching, including local field effects
85.60.Dw Photodiodes; phototransistors; photoresistors
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