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6 Oct 1986

Volume 49, Issue 14, pp. 835-905


Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disordering

Y. J. Yang, Y. C. Lo, G. S. Lee, K. Y. Hsieh, and R. M. Kolbas

Appl. Phys. Lett. 49, 835 (1986); http://dx.doi.org/10.1063/1.97509 (3 pages) | Cited 11 times

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We report the first cw, room‐temperature multiple quantum well transverse junction stripe laser (MQW TJS) with an alloy disordered heterobarrier. The addition of a lateral heterobarrier by zinc diffusion enhanced alloy disordering reduces the laser threshold by a factor of 3 compared to standard transverse junction stripe lasers processed simultaneously. The reduction in threshold and excellent single mode performance of the MQW TJS are attributed to the superior carrier and optical confinement of a single heterojunction compared to a homojunction. We demonstrate for the first time lateral injection in a multiple quantum well where the diffused junction plays an active (not passive) role in the injection process and that the transition region between complete disorder and no disorder forms the active region of the laser.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
66.30.J- Diffusion of impurities

Instabilities and all‐optical phase‐controlled switching in a nonlinear directional coherent coupler

S. Wabnitz, E. M. Wright, C. T. Seaton, and G. I. Stegeman

Appl. Phys. Lett. 49, 838 (1986); http://dx.doi.org/10.1063/1.97510 (3 pages) | Cited 33 times

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The instability in the evolution of a nonlinear wave along a directional coupler is investigated with the beam propagation method, both for self‐focusing and for self‐defocusing materials. A new device is proposed for switching an intense light beam at the device output by changing the relative phase of a weak input signal.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Gn Optical waveguides and couplers
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.82.-m Integrated optics

N2 excited state absorption in XeF lasers

A. Mandl and H. A. Hyman

Appl. Phys. Lett. 49, 841 (1986); http://dx.doi.org/10.1063/1.97511 (3 pages) | Cited 5 times

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The mechanism by which NF3 fueled XeF laser mixtures degrade has been identified. The degradation is due to the formation of trace amounts of N2 which charge exchange with electron beam excited Ne+2 to form N+2X2Σ+g (v″=3,4). The N+2 X2 Σ+g (v″=3,4) absorbs selectively at the 353‐nm band but not at the 351‐nm band. This has been confirmed experimentally by direct observation of the laser output spectrum which shows a significant decrease of the 353‐nm laser band with almost no decrease of the 351‐nm bands when N2 is added to the laser mixture. A Stern–Volmer analysis of the decreased XeF∗ emission due to the addition of N2 to the laser mixture has been performed and the charge exchange rate between N2 and Ne+2 of 9×10−10 cm3/s deduced. The decrease of XeF laser output with N2 addition has been measured for both F2 and NF3 fuels. The results are in good agreement with model calculations using measured and literature values for the reactions.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
33.80.Be Level crossing and optical pumping

Nanosecond switching of bistable ZnSe interference filters at room temperature

J. Y. Bigot, A. Daunois, R. Leonelli, M. Sence, J. G. H. Mathew, S. D. Smith, and A. C. Walker

Appl. Phys. Lett. 49, 844 (1986); http://dx.doi.org/10.1063/1.97512 (3 pages) | Cited 15 times

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UV light pulses of nanosecond and picosecond duration were used to switch bistable nonlinear interference filters from their low to their high transmission level. At room temperature, switching times in the nanosecond range are measured. They are, to the authors’ knowledge, the shortest reported for such devices.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ci Filters, zone plates, and polarizers

Boron oxide interaction with silicon in silicon molecular beam epitaxy

E. de Frésart, S. S. Rhee, and K. L. Wang

Appl. Phys. Lett. 49, 847 (1986); http://dx.doi.org/10.1063/1.97513 (3 pages) | Cited 15 times

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B2O3 decomposition by reaction with Si has been studied in situ by Auger electron spectroscopy in a Si molecular beam epitaxy environment as a function of the silicon flux (0<JSi<14.5 Å/min) and the growth temperature (25 °C<Ts<800 °C). Quantitative analysis of Auger signals indicates that oxygen is associated with both SiO2 and B2O3. Below a critical substrate temperature (Ts<500 °C), no reaction occurs between B2O3 and Si. When the substrate temperature is higher than 500 °C, the atomic fraction of Si and B increases while that for SiO2 and B2O3 decreases. The chemical reaction which causes the signal changes is thermally activated, as shown by the dependence of the oxygen on boron concentration ratio, I[O/B], which drops rapidly according to an Arrhenius relation with an activation energy Ea=4.5±1.0 eV. From the experimental results, we propose a model which involves B2O3 reduction by Si to form the (Si‐B) and SiO2 phases. SiO2 is then decomposed by Si bombardment on the surface to produce SiO which subsequently desorbs.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Compositional profile of the amorphous silicon/nitride interface studied with Rutherford backscattering

J. R. Abelson, C. C. Tsai, and T. W. Sigmon

Appl. Phys. Lett. 49, 850 (1986); http://dx.doi.org/10.1063/1.97514 (3 pages) | Cited 3 times

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The compositional profile of the interface between plasma‐deposited amorphous silicon (a‐Si@B:H) and silicon nitride (a‐SiNx:H) thin films has been examined using high depth resolution Rutherford backscattering spectrometry. We have optimized the grazing exit angle geometry of the measurement using a model calculation which predicts a ∼20 Å interface depth resolution. The fundamental noise sources considered in the calculation are the energy straggling and angular divergence of ions traversing the target, detector noise, and geometrical effects. Experimentally, the major compositional change for both Si and N is found to take place within the interface depth resolution which is 18 Å. However, we find a tail of ∼3 at. % nitrogen extending through a 50‐Å a‐Si:H layer deposited on top of a‐SiNx:H. Such a tail is not expected for the reverse order of layer deposition. The compositional asymmetry depending on the order of deposition is presumably associated with the reported asymmetry in the charge density at interfaces. The nitrogen contamination further implies that most a‐Si:H/a‐SiNx:H quantum well structures are in fact based on nitrogen alloyed a‐Si:H layers.
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68.35.Dv Composition, segregation; defects and impurities
68.55.Nq Composition and phase identification

Direct imaging of Au and Ag clusters by scanning tunneling microscopy

David W. Abraham, Klaus Sattler, Eric Ganz, H. Jonathon Mamin, Ruth Ellen Thomson, and John Clarke

Appl. Phys. Lett. 49, 853 (1986); http://dx.doi.org/10.1063/1.97515 (3 pages) | Cited 33 times

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Clusters of Au and Ag deposited on the surface of highly oriented pyrolitic graphite have been imaged in air using a scanning tunneling microscope. An image is shown of a 350‐Å silver cluster obtained in the constant‐current (topographic) mode. In the variable‐current mode, clusters of 6–20 atoms have been observed with atomic resolution. The motion and growth of clusters on the support are observed.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.35.B- Structure of clean surfaces (and surface reconstruction)
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
33.15.Dj Interatomic distances and angles

Wavelength shift of the ruby luminescence R lines under shock compression

P. D. Horn and Y. M. Gupta

Appl. Phys. Lett. 49, 856 (1986); http://dx.doi.org/10.1063/1.97516 (3 pages) | Cited 13 times

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A method has been developed to measure the time‐resolved, stress‐induced wavelength shift of ruby luminescence under shock loading. Results of experiments at 40 and 99 kbar stresses are presented and compared with high pressure hydrostatic data. A brief discussion of the necessary improvements to obtain high resolution shock data to permit quantitative analysis is presented.
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62.50.-p High-pressure effects in solids and liquids
07.35.+k High-pressure apparatus; shock tubes; diamond anvil cells
81.40.Tv Optical and dielectric properties related to treatment conditions
78.60.-b Other luminescence and radiative recombination

InGaAs/InP superlattice avalanche photodetectors grown by gas source molecular beam epitaxy

H. Temkin, M. B. Panish, and S. N. G. Chu

Appl. Phys. Lett. 49, 859 (1986); http://dx.doi.org/10.1063/1.97517 (3 pages) | Cited 16 times

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Preparation and performance of separate avalanche and multiplication superlattice photodiodes are reported. The absorbing region of these devices consists of up to 100 InGaAs quantum wells separated by InP barriers grown by gas source molecular beam epitaxy. The well size varies from 50 to 20 Å with very well‐resolved exciton structures visible at room temperature. With the p‐n junction displaced into the InP layer, leakage currents as low as 0.1 nA are obtained at unity gain bias of 20 V. dc avalanche gain of up to 280 and rf gain of 20 are observed at a bias of 38 V.
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85.60.Dw Photodiodes; phototransistors; photoresistors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Electrical behavior of fast neutron irradiated semi‐insulating GaAs during thermal recovery

A. Goltzené, C. Schwab, J. P. David, and A. Roizes

Appl. Phys. Lett. 49, 862 (1986); http://dx.doi.org/10.1063/1.97518 (3 pages) | Cited 13 times

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Electrical measurements during the thermal recovery of fast neutron irradiated GaAs confirm the main steps around 400 and 600 °C, corresponding to the decay of electron paramagnetic resonance identified V2−Ga and As4+Ga centers.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
61.80.Hg Neutron radiation effects
76.30.Mi Color centers and other defects

Galvanomagnetic effect in AlGaAs/GaAs heterostructures grown by organometallic vapor phase epitaxy

Leye Aina, Mike Mattingly, and Krishna Pande

Appl. Phys. Lett. 49, 865 (1986); http://dx.doi.org/10.1063/1.97633 (3 pages) | Cited 7 times

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A new galvanomagnetic effect in AlGaAs/GaAs heterostructures is described. The Hall coefficient of such structures is shown to decrease with the magnetic field in a low field regime where magnetoresistive effects are negligible. The effect is explained in terms of two‐band conduction in the AlGaAs and in the two‐dimensional electron gas at the heterojunction where the electrons have different energies and substantially differing mobilities and concentrations. It is shown that the low magnetic field Hall mobilities can be used to estimate the mobility of the two‐dimensional electron gas in a heterostructure where there is parallel conduction.
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72.20.My Galvanomagnetic and other magnetotransport effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Fr Low-field transport and mobility; piezoresistance

Enhanced injection at silicon‐rich oxide interfaces

K‐T. Chang and K. Rose

Appl. Phys. Lett. 49, 868 (1986); http://dx.doi.org/10.1063/1.97519 (3 pages) | Cited 6 times

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The enhanced electron injection of silicon‐rich oxide (SRO)/SiO2 interfaces is explained. We find an excellent fit to the current‐voltage characteristics of these interfaces by calculating the field enhancement over the surface of oblate spheroids in a uniform applied field. This explains why field enhancement at SRO/SiO2 interfaces tends to be independent of island size and unaffected by annealing.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.35.B- Structure of clean surfaces (and surface reconstruction)

HgTe‐CdTe superlattices grown on GaAs (100) oriented substrates by molecular beam epitaxy

J. M. Ballingall, D. J. Leopold, M. L. Wroge, D. J. Peterman, B. J. Morris, and J. G. Broerman

Appl. Phys. Lett. 49, 871 (1986); http://dx.doi.org/10.1063/1.97520 (3 pages) | Cited 6 times

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HgTe‐CdTe superlattices have been grown on GaAs (100) substrates by molecular beam epitaxy. X‐ray diffraction analysis shows the superlattices to be single crystalline with well defined periods. Temperature‐dependent infrared absorbance measurements indicate that the superlattices have band gaps with positive temperature coefficients. The band‐gap temperature dependence is in semiquantitative agreement with theoretical calculations.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors grown by chemical beam epitaxy

A. Antreasyan, W. T. Tsang, and P. A. Garbinski

Appl. Phys. Lett. 49, 874 (1986); http://dx.doi.org/10.1063/1.97521 (3 pages) | Cited 1 time

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We have fabricated enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors having extrinsic transconductances of 64 mS/mm for a gate length of 2 μm. The epitaxial layers for the structure have been grown by chemical beam epitaxy. The field‐effect transistors exhibit effective mobilities of 1235 cm2/ V s and an average drift velocity of 1.12×107 cm/s. These results are in good agreement with state of the art InP metal‐insulator‐semiconductor field‐effect transistor technology.
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85.30.Tv Field effect devices
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.-r Electrical properties of specific thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Study of deep level centers at excited states in GaP by means of transient optical absorption spectroscopy

Hiromasa Shibata, Takeshi Eshita, Katsumi Tanimura, Noriaki Itoh, Yoshikazu Hayashi, and Kiyoshi Yoneda

Appl. Phys. Lett. 49, 877 (1986); http://dx.doi.org/10.1063/1.97522 (3 pages) | Cited 4 times

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Transient optical absorption and luminescence induced by an electron pulse in n‐type GaP and their changes induced by a subsequent laser pulse have been measured. It is shown that the decays of the optical absorption and of the luminescence induced by an electron pulse consist of a fast (F) component that decays within 1 ms and slow (S) components having a lifetime of about 10 ms. It is shown also that a laser pulse incident on the specimen after the F component is eliminated reduces the S component and produces the F component. The F component is ascribed to donor‐acceptor recombination and the S component to annihilation of metastable centers.
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78.40.Fy Semiconductors
78.30.-j Infrared and Raman spectra
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Laser direct writing of single‐crystal III‐V compounds on GaAs

N. H. Karam, N. A. El‐Masry, and S. M. Bedair

Appl. Phys. Lett. 49, 880 (1986); http://dx.doi.org/10.1063/1.97523 (3 pages) | Cited 14 times

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Laser selective chemical vapor deposition and direct writing of GaAs and its ternary alloys with P have been achieved on GaAs substrates. An Ar+ laser is used to locally heat areas where selective deposition is desired on a substrate which is uniformly biased to a temperature in the range of 25–500 °C. Epitaxial growth was achieved by carefully controlling the deposition parameters to reach growth rates low enough, typically 20 Å/s, for the reaction kinetics of the pyrolitic process to take place. Cross‐sectional transmission electron microscopy and photoluminescence results indicate that the quality of the deposited material is comparable to that grown with the conventional metalorganic chemical vapor deposition technique.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Single‐mode single‐lobe operation of broad area AlxGa1−xAs‐GaAs quantum well lasers

D. G. Deppe, G. S. Jackson, N. Holonyak, D. C. Hall, R. D. Burnham, R. L. Thornton, J. E. Epler, and T. L. Paoli

Appl. Phys. Lett. 49, 883 (1986); http://dx.doi.org/10.1063/1.97524 (3 pages) | Cited 5 times

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A buried heterostructure broad area quantum well heterostructure AlxGa1−xAs‐GaAs laser diode modified with a small multiple stripe pattern near its center is described that operates single mode and narrow lobe (<2 °) from threshold (Ith) to 2Ith or 3Ith. The broad area (wide stripe) buried heterostructure laser is made by impurity‐induced layer disordering.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Proposal for superstructure based high efficiency photovoltaics

M. Wagner and J. P. Leburton

Appl. Phys. Lett. 49, 886 (1986); http://dx.doi.org/10.1063/1.97525 (3 pages) | Cited 1 time

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A novel class of cascade structures is proposed which features multijunction upper subcells. These will be referred to as superstructure high efficiency photovoltaics (SHEP). The additional junctions enhance spectral response and improve radiation tolerance by reducing bulk recombination losses. This is important because ternary III‐V alloys, which tend to have short minority‐carrier diffusion lengths, are the only viable materials for the high band‐gap upper subcells required for cascade solar cells. Realistic simulations of AlGaAs SHEP’s show that one sun AM0 efficiencies in excess of 26% are possible.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Kk Junction diodes

Energy relaxation of two‐dimensional electrons and the deformation potential constant in selectively doped AlGaAs/GaAs heterojunctions

K. Hirakawa and H. Sakaki

Appl. Phys. Lett. 49, 889 (1986); http://dx.doi.org/10.1063/1.97526 (3 pages) | Cited 99 times

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We investigate the electron heating process in selectively doped AlGaAs/GaAs heterojunctions from magnetotransport measurements at low temperatures. It is shown that the dominant energy‐relaxation mechanism of the degenerate two‐dimensional (2D) electrons for the electron temperature below 40 K is the emission of acoustic phonons via deformation potential coupling, and that the energy‐loss rate is almost independent of 2D electron densities. From a detailed analysis it is derived that the deformation potential constant of the quantized 2D conduction band in GaAs is 11±1 eV.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.38.-k Polarons and electron-phonon interactions
72.20.Ht High-field and nonlinear effects
72.20.My Galvanomagnetic and other magnetotransport effects

Inverted thermal conversion—GaAs, a new alternative material for integrated circuits

J. Lagowski, H. C. Gatos, C. H. Kang, M. Skowronski, K. Y. Ko, and D. G. Lin

Appl. Phys. Lett. 49, 892 (1986); http://dx.doi.org/10.1063/1.97527 (3 pages) | Cited 54 times

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We developed a new type of GaAs which exhibits inverted thermal conversion (ITC), i.e., it converts from conducting to semi‐insulating upon annealing at about 850 °C. In device fabrication, its low resistivity, prior to high‐temperature processing, differentiates ITC from the standard semi‐insulating GaAs. The ITC characteristics are obtained through control of the concentration of the midgap donor EL2 based on heat treatment and crystal growth modification. Thus, EL2 does not exist in the conducting state of ITC GaAs. Conversion to the semi‐insulating state during 850 °C annealing is caused by the formation of EL2 consistent with our earlier proposed EL2 model.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
85.40.Bh Computer-aided design of microcircuits; layout and modeling
72.80.Ey III-V and II-VI semiconductors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Internal thermal stress distribution in InGaAsP/InP lasers

J. M. Liu, Y. C. Chen, and S. F. Wayne

Appl. Phys. Lett. 49, 895 (1986); http://dx.doi.org/10.1063/1.97528 (3 pages)

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The two‐dimensional distribution of the internal thermal stress in the active layer of a buried heterostructure InGaAsP/InP laser is calculated with the finite‐element method for active regions of both rectangular and crescent shapes. The shape and the finite width of the stripe cause nonuniform distribution of the thermal stress in the active layer. The results show different distributions for these two shapes, particularly near the edges of the active regions. Large stress and stress gradient are found around the tips of the crescent, which may imply problems such as defects and mode instability in real devices.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Characterization of epitaxial (Ca,Ba)F2 films on Si(111) substrates

M. Wittmer, D. A. Smith, Armin Segmüller, H. Zogg, and H. Melchior

Appl. Phys. Lett. 49, 898 (1986); http://dx.doi.org/10.1063/1.97529 (3 pages) | Cited 5 times

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We have investigated epitaxial BaF2/CaF2 bilayers on Si(111) with ion channeling, grazing‐incidence x‐ray diffraction, and transmission electron microscopy. The BaF2 layer, which was grown on a thin intermediate CaF2 layer, showed a channeling minimum yield of 8% and a residual strain of 0.2%. Regions of BaF2 with a mosaic spread in orientation were observed but otherwise the epitaxial quality of the fluoride bilayer was found to be very good.
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68.55.-a Thin film structure and morphology
68.60.Bs Mechanical and acoustical properties
68.35.Gy Mechanical properties; surface strains
68.35.B- Structure of clean surfaces (and surface reconstruction)

Formation of CoNbZr films by a dc opposing‐target sputtering method

Michiyori Miura, Katsuyuki Tanaka, and Hitoshi Itegami

Appl. Phys. Lett. 49, 901 (1986); http://dx.doi.org/10.1063/1.97530 (2 pages) | Cited 1 time

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CoNbZr films were prepared using dc opposing‐target sputtering equipment. It was investigated as to how the sputtering gas pressure influences the characteristics of the films under the condition of constant deposition rate. The saturation flux density and crystallization temperature were almost constant and independent of the sputtering gas pressure. Their values were 0.83±0.03 T and 562±1 °C. However, the anisotropy field, coercive force, and morphology of the films were significantly affected by the sputtering gas pressure.
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

Gas‐sensitive electrical conduction observed in a locally discontinuous Au thin film

Tetsuji Yasuda, Hiroshi Komiyama, and Kazunobu Tanaka

Appl. Phys. Lett. 49, 903 (1986); http://dx.doi.org/10.1063/1.97531 (3 pages)

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Gas‐sensitive electrical conduction is reported in a gold thin film with a locally discontinuous structure. Two novel features were found. Firstly, irregular current pulsation was induced under a stream of helium gas. Secondly, the pulsation was suppressed by adsorption of gas molecules such as oxygen, carbon monoxide, and hydrogen. These phenomena are tentatively interpreted in terms of atomic rearrangement of the gold surface.
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73.61.At Metal and metallic alloys
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
81.40.Rs Electrical and magnetic properties related to treatment conditions
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