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13 Oct 1986

Volume 49, Issue 15, pp. 911-984

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Simple laser‐driven, metal‐photocathode electron source

S. W. Downey, L. A. Builta, D. C. Moir, T. J. Ringler, and J. D. Saunders

Appl. Phys. Lett. 49, 911 (1986); http://dx.doi.org/10.1063/1.97532 (3 pages) | Cited 25 times

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An ArF excimer laser was used to produce photoelectrons from common metal surfaces at modest vacuum. The photoelectrons are subsequently accelerated across an anode‐cathode gap. Both space‐charge and emission‐limited flow were examined. The temporal characteristics of the emission‐limited electron beam produced by this device are nearly identical to those of the laser pulse used to produce the photoemission. In the space‐charge‐limited case, a rise time of 3 ns was obtained. Maximum current densities of 70 A/cm2 were achieved.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces

Ni‐C multilayer reflectivity and photoelectron yield in the NiL‐edge region

H. van Brug, M. P. Bruijn, R. van der Pol, and M. J. van der Wiel

Appl. Phys. Lett. 49, 914 (1986); http://dx.doi.org/10.1063/1.97482 (3 pages) | Cited 4 times

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We analyze measurements of the x‐ray reflectivity and photoelectron yield of a Ni‐C multilayer (103 layers; d=31 Å) in the NiL‐edge region (700–950 eV). The measured reflectivity is shown to be consistent with the one calculated using x‐ray scattering factors  f1 and  f2 for Ni as obtained from the photoelectron yield (∼f2). The analysis yields a new set of ‘‘effective’’ values for  f1 in the NiL‐edge region.
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75.20.Ck Nonmetals
78.70.Ck X-ray scattering
42.79.Wc Optical coatings
79.60.Jv Interfaces; heterostructures; nanostructures

Electro‐optic and dielectric properties of KTiOPO4

J. D. Bierlein and C. B. Arweiler

Appl. Phys. Lett. 49, 917 (1986); http://dx.doi.org/10.1063/1.97483 (3 pages) | Cited 135 times

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The electro‐optic and dielectric properties of potassium titanyl phosphate (KTP) have been measured from dc to 1 GHz and are compared with other electro‐optic materials. KTP is shown to possess a combination of properties that make it unique for a variety of electro‐optic modulator applications.
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78.20.Jq Electro-optical effects
77.22.Ch Permittivity (dielectric function)
77.65.-j Piezoelectricity and electromechanical effects
42.79.Hp Optical processors, correlators, and modulators

Broadband and high‐reflectivity mirror using (Al,Ga)As/(Ca,Sr)F2 multilayer structures grown by molecular beam epitaxy

C. W. Tu, S. A. Ajuria, and H. Temkin

Appl. Phys. Lett. 49, 920 (1986); http://dx.doi.org/10.1063/1.97484 (3 pages) | Cited 5 times

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By molecular beam epitaxy we have grown a quarter‐wave stack of lattice‐matched Al0.1Ga0.9As/Ca0.45Sr0.55F2 multilayer heterostructures which has high reflectivity (89%) over a broad spectral range. Unlike similar structures of (Al,Ga)As/GaAs which require many periods to achieve high reflectivity, the III‐V/fluoride structures require only four periods due to the large difference in the refractive indices of the III‐V compound and the fluoride (3.6 and 1.4 at 0.9 μm, respectively). Furthermore, for the (Al,Ga)As/GaAs structures the high‐reflectivity plateau is narrower, and because of absorption in the GaAs layers the reflectivity decreases rapidly at wavelengths shorter than the band‐gap wavelength of GaAs. For the III‐V/fluoride structures grown the absorption is not a problem, and the high‐reflectivity region extends from 0.9 μm to 0.7 μm. The ability to grow epitaxial fluoride and (Al,Ga)As with arbitrary AlAs mole fraction, and therefore different refractive indices, should stimulate interesting applications in optics.
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75.20.Ck Nonmetals
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors

Compact room‐temperature metal vapor laser

A. K. Anders, E. C. Harvey, and R. C. Tobin

Appl. Phys. Lett. 49, 923 (1986); http://dx.doi.org/10.1063/1.97485 (2 pages) | Cited 9 times

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Laser emission is obtained at room temperature on the copper I (510.6 and 578.2 nm) and gold I (627.8 nm) transitions from a compact device in which the metal vapor is produced by sputtering in the presence of a rapid flow of noble gas. Peak powers of 1 kW and 250 W are obtained for copper I and gold I, respectively.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.By Design of specific laser systems

Two‐photon excitation of molecular hydrogen and stimulated emission in the vacuum ultraviolet

H. F. Döbele, M. Hörl, and M. Röwekamp

Appl. Phys. Lett. 49, 925 (1986); http://dx.doi.org/10.1063/1.97486 (2 pages) | Cited 7 times

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Narrow‐bandwidth 193‐nm radiation is generated by stimulated Raman scattering and amplified in ArF to ≊100 mJ in a ≊5‐ns pulse. Two‐photon excitation of H2 results in 23 vacuum‐ultraviolet lines down to 117 nm.
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33.80.Be Level crossing and optical pumping
33.20.Lg Ultraviolet spectra
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

Hydrogen‐free SiN films deposited by ion beam sputtering

Makoto Kitabatake and Kiyotaka Wasa

Appl. Phys. Lett. 49, 927 (1986); http://dx.doi.org/10.1063/1.97615 (3 pages) | Cited 9 times

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A hydrogen‐free SiN film was deposited by ion beam sputtering at low temperature. The substrate surface was almost parallel to the ion beam. The deposited SiN film exhibited high chemical endurance, high thermal endurance, and low density of memory traps.
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73.61.Ng Insulators
81.15.Cd Deposition by sputtering
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Layer‐dependent laser sputtering of BaF2 (111)

J. Reif, H. Fallgren, H. B. Nielsen, and E. Matthias

Appl. Phys. Lett. 49, 930 (1986); http://dx.doi.org/10.1063/1.97487 (3 pages) | Cited 4 times

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Laser‐induced sputtering from the (111) surface of BaF2 was investigated under ultrahigh vacuum conditions, applying fluences well below the macroscopic damage threshold. Measurement of the wavelength‐dependent desorption of Ba+ indicates that Ba+ is emitted from two chemically different surroundings at the surface. For a fixed wavelength, the emission rates of Ba+ and F+ as functions of time show a distinct anticorrelation, confirming the existence of two different chemical states of the surface, and suggesting that the sputtering takes place layer by layer.
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79.20.Ds Laser-beam impact phenomena
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Strain relief in epitaxial fluoride buffer layers for semiconductor heteroepitaxy

H. Zogg

Appl. Phys. Lett. 49, 933 (1986); http://dx.doi.org/10.1063/1.97488 (3 pages) | Cited 25 times

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Strain in epitaxial BaF2 layers grown by molecular beam epitaxy on CaF2 covered Si is found to be completely relieved at room temperature in films thicker than ∼250 nm, despite a large lattice and thermal expansion mismatch. In thinner films, planar tensile strain up to 5×10−3 is observed. Partial or complete strain relief occurs during temperature cycling near room temperature, and even if further layers are grown on top of the BaF2 film. This suggests that such films may be of use as buffers to relieve stresses in heteroepitaxial semiconductor‐on‐semiconductor structures.
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68.60.Bs Mechanical and acoustical properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.Lm Deformation, plasticity, and creep

Anomalous distance dependence in scanning tunneling microscopy

A. Bryant, D. P. E. Smith, G. Binnig, W. A. Harrison, and C. F. Quate

Appl. Phys. Lett. 49, 936 (1986); http://dx.doi.org/10.1063/1.97489 (3 pages) | Cited 5 times

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In this work it is found experimentally that the appearance of surfaces in scanning tunneling microscope (STM) images can change drastically as the distance between the STM tip and sample is varied. Defects are found on gold‐sputtered graphite samples which appear as protrusions in charge density when the spacing exceeds a critical value. At smaller distances the protrusions are not evident in the images. It is possible to model these defects as gold atoms which lie just below the surface layer. We discuss possible mechanisms that give rise to the distance dependence.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.35.Dv Composition, segregation; defects and impurities
68.35.B- Structure of clean surfaces (and surface reconstruction)
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

High‐speed response of a quasi‐graded band‐gap superlattice p‐i‐n photodiode

D. G. Parker, N. R. Couch, M. J. Kelly, and T. M. Kerr

Appl. Phys. Lett. 49, 939 (1986); http://dx.doi.org/10.1063/1.97490 (3 pages) | Cited 3 times

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The photoresponse to a short optical pulse of a GaAs p‐n junction containing an undoped asymmetric GaAs/AlAs superlattice is reported. The response to a light pulse of <400 fs duration has been measured and a rise time of 80 ps is observed. The trailing edge of the response exhibits a long time tail, which is thought to be dominated by the time taken to tunnel through the thickest barrier, being the Γ‐Γ separation of the GaAs and AlAs of a 3‐nm barrier.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Defect reduction in GaAs grown by molecular beam epitaxy using different superlattice structures

S. M. Bedair, T. P. Humphreys, N. A. El‐Masry, Y. Lo, N. Hamaguchi, C. D. Lamp, A. A. Tuttle, D. L. Dreifus, and P. Russell

Appl. Phys. Lett. 49, 942 (1986); http://dx.doi.org/10.1063/1.97631 (3 pages) | Cited 28 times

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Several superlattice structures, grown by molecular beam epitaxy, have been used to reduce the density of threading dislocations originating from the GaAs substrate. Results clearly indicate that compared to epitaxial layers grown directly on GaAs substrates, a GaAs‐InxGa1−xAs superlattice (x<0.12) reduces the dislocations by approximately two orders of magnitude. Transmission electron microscopy, electron beam induced current, and etch pit density have been used to characterize the effectiveness of using superlattice buffer layers for the reduction of defects in GaAs epilayers.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

R. P. Leon, S. G. Bailey, G. A. Mazaris, and W. D. Williams

Appl. Phys. Lett. 49, 945 (1986); http://dx.doi.org/10.1063/1.97491 (3 pages) | Cited 2 times

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A continuous p‐type GaAs epilayer has been deposited on an n‐type sawtooth GaAs surface using metalorganic chemical vapor deposition. A wet chemical etching process was used to expose the intersecting (111)Ga and (111)Ga planes with 6 μm periodicity. Charge collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V‐groove GaAs cell with improved absorptivity, high short‐circuit current, and tolerance to particle radiation.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
84.60.Jt Photoelectric conversion
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
81.65.-b Surface treatments

Optical time‐of‐flight investigation of ambipolar carrier transport in GaAlAs using GaAs/GaAlAs double quantum well structures

H. Hillmer, G. Mayer, A. Forchel, K. S. Löchner, and E. Bauser

Appl. Phys. Lett. 49, 948 (1986); http://dx.doi.org/10.1063/1.97492 (3 pages) | Cited 15 times

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We propose a new all‐optical time‐of‐flight method which provides transport properties like the average carrier velocity and diffusivity from measurements of the flight duration in semiconductor materials sandwiched between two quantum wells. The method is capable of very high spatial and temporal resolution and is demonstrated by time‐of‐flight experiments in GaAlAs.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
71.45.-d Collective effects

Correlation of stress with light‐induced defects in hydrogenated amorphous silicon films

Sarah R. Kurtz, Y. Simon Tsuo, and Raphael Tsu

Appl. Phys. Lett. 49, 951 (1986); http://dx.doi.org/10.1063/1.97493 (3 pages) | Cited 8 times

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No correlation was found between the stress in hydrogenated amorphous silicon films and the light‐induced effect, as measured by the photoconductivity. An equation is derived for calculation of the external stress applied to a film. The light‐induced degradation in a ‘‘zero‐stress’’ film (one removed from the substrate) was shown to be equivalent to that of an as‐deposited film.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.40.+w Photoconduction and photovoltaic effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Surface structure of GaAs with adsorbed Te

R. D. Feldman and R. F. Austin

Appl. Phys. Lett. 49, 954 (1986); http://dx.doi.org/10.1063/1.97632 (3 pages) | Cited 13 times

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The surface structures that result from the adsorption of Te on (100) GaAs have been shown to affect the orientation of CdTe films on GaAs. Two structures are described here. A low‐temperature (6×1) surface leads to (100) film growth. At 580 °C, a new surface results which is characterized by ordering along directions 60° from [011] and [011], and leads to (111) growth of CdTe. Both surface structure and the interaction of the group II element with the surface are believed to be important in determining the orientation of the film.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Effect of temperature during illumination on annealing of metastable dangling bonds in hydrogenated amorphous silicon

W. B. Jackson and M. Stutzmann

Appl. Phys. Lett. 49, 957 (1986); http://dx.doi.org/10.1063/1.97494 (3 pages) | Cited 16 times

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Annealing of metastable dangling bond defects in light‐soaked undoped hydrogenated amorphous silicon (a‐Si:H) is investigated in samples which have been illuminated at different temperatures. Based on a monomolecular annealing model, the distribution of activation energies is determined. The annealing distribution narrows and shifts to higher energies as the temperature during illumination is increased.
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78.40.Fy Semiconductors
71.23.-k Electronic structure of disordered solids
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
76.30.Mi Color centers and other defects

Two‐dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by chemical beam epitaxy

W. T. Tsang, A. M. Chang, J. A. Ditzenberger, and N. Tabatabaie

Appl. Phys. Lett. 49, 960 (1986); http://dx.doi.org/10.1063/1.97495 (3 pages) | Cited 12 times

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Shubnikov–de Haas, quantum Hall effect, and cyclotron resonance measurements revealed the existence of a high mobility, two‐dimensional electron gas at the Ga0.47In0.53As/InP heterointerface grown by chemical beam epitaxy. Enhanced electron mobilities were as high as ∼130×103 cm2/V s at 4.2 K. A striking feature in the data which also indicates that the sample is of high quality is the large number of Shubnikov–de Haas oscillation periods observed. Oscillations were observable up to a Landau filling factor of around 50, corresponding to a Landau level index of 25.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.My Galvanomagnetic and other magnetotransport effects
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
72.20.Fr Low-field transport and mobility; piezoresistance

Growth of ultrapure InP by atmospheric pressure organometallic vapor phase epitaxy

C. H. Chen, M. Kitamura, R. M. Cohen, and G. B. Stringfellow

Appl. Phys. Lett. 49, 963 (1986); http://dx.doi.org/10.1063/1.97496 (3 pages) | Cited 21 times

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We report the growth and characterization of ultrapure InP using trimethylindium and phosphine by atmospheric pressure organometallic vapor phase epitaxy (APOMVPE). The 77 K mobility of 131 000 cm2 /V s is the highest ever obtained by APOMVPE and among the highest ever measured for InP using any growth technique. The low‐temperature photoluminescence measurements reveal that impurity reduction occurs at higher growth temperatures.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.40.Fy Semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Interdiffusion and wavelength modification in In0.53Ga0.47As/ In0.52Al0.48As quantum wells by lamp annealing

K. S. Seo, P. K. Bhattacharya, G. P. Kothiyal, and S. Hong

Appl. Phys. Lett. 49, 966 (1986); http://dx.doi.org/10.1063/1.97497 (3 pages) | Cited 19 times

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In0.53Ga0.47As/ In0.52Al0.48As single quantum well structures grown by molecular beam epitaxy were pulse annealed by a halogen lamp to determine the stability of their optical properties after such thermal treatment. The annealing time and temperature were 5 s and 650–850 °C, respectively. The shift in energy of the main peak in the low‐temperature photoluminescence spectra was modeled by considering Al‐Ga interdiffusion at the heterointerface and solving the appropriate Schrödinger equation for this region. The estimated interdiffusion constants D are ∼10−16–10−15 cm2/s in this temperature range, which are almost three orders higher than the corresponding values reported for GaAs/ AlxGa1−xAs. For longer annealing times, up to 30 min, the linewidth (full width at half‐maximum) of the excitonic transition in the 11 K photoluminescence spectrum continuously decreased from 12.5 to 7.7 meV, while the intensity maintained a high value.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
78.40.Fy Semiconductors
81.40.Tv Optical and dielectric properties related to treatment conditions

Amorphous thin films of Zn3P2: Preparation and characterization

J. L. Deiss, B. Elidrissi, M. Robino, and R. Weil

Appl. Phys. Lett. 49, 969 (1986); http://dx.doi.org/10.1063/1.97498 (2 pages) | Cited 4 times

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We report about the preparation and characterization of amorphous thin films of Zn3P2. The optical properties of these films are given and compared to those of polycrystalline thin films.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
75.20.Ck Nonmetals
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology

Enhancement of film deposition rate due to the production of Si2H6 as an intermediate in the photodecomposition of SiH4 using an ArF excimer laser

Toshihiro Taguchi, Masato Morikawa, Yasuyuki Hiratsuka, and Koichi Toyoda

Appl. Phys. Lett. 49, 971 (1986); http://dx.doi.org/10.1063/1.97499 (3 pages) | Cited 11 times

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Deposition of amorphous hydrogenated silicon films (a‐Si:H) on a glass substrate by photodissociation of SiH4 using a focused ArF excimer laser beam directed parallel to the substrate has been demonstrated. The rate of film deposition increased with irradiation time at constant laser power, with a fixed initial quantity of reactant gas. This result indicates the formation of Si2H6, which is excited by a single incident photon. The small amount of Si2H6 formed promoted photodecomposition of SiH4.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.50.Hp Processes caused by visible and UV light

Damage calculation and measurement for GaAs amorphized by Si implantation

W. G. Opyd, J. F. Gibbons, J. C. Bravman, and M. A. Parker

Appl. Phys. Lett. 49, 974 (1986); http://dx.doi.org/10.1063/1.97500 (3 pages) | Cited 28 times

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Extended defects in GaAs are investigated following epitaxial regrowth of amorphous layers. GaAs surface layers were amorphized by Si+ implants at liquid‐nitrogen temperature. Anneals were performed for 4 s to 30 min from 150 to 885 °C. Rutherford backscattering spectrometry and transmission electron microscopy were used to evaluate the results of annealing. Complete solid‐state epitaxy occurs rapidly at low temperature. Stacking faults and microtwins surrounded by dislocation networks extend to the surface following regrowth. The dislocations anneal at varying rates over intermediate temperature ranges (200–700 °C), and the microtwins climb out at higher temperatures (>700 °C). Defect depth profiles are correlated with damage and stoichiometric imbalances computed by the Boltzmann transport equation approach to ion‐implant modeling.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Np Solid phase epitaxy; growth from solid phases
61.80.Jh Ion radiation effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Magnetic properties of cobalt nitride thin films

Morito Matsuoka, Ken’ichi Ono, and Takashi Inukai

Appl. Phys. Lett. 49, 977 (1986); http://dx.doi.org/10.1063/1.97501 (3 pages) | Cited 11 times

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Cobalt nitride (CoNx) thin films with a large perpendicular magnetic anisotropy are synthesized by reactive sputtering. The perpendicular magnetic anisotropy is induced by substrate heating during deposition, annealing after deposition, or ion bombardment during deposition.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
81.40.Rs Electrical and magnetic properties related to treatment conditions
75.30.Gw Magnetic anisotropy
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

Observation of Néel structure walls on the surface of 1.4‐μm‐thick magnetic films using spin‐polarized scanning electron microscopy

K. Koike, H. Matsuyama, K. Hayakawa, K. Mitsuoka, S. Narishige, Y. Sugita, K. Shiiki, and C. Saka

Appl. Phys. Lett. 49, 980 (1986); http://dx.doi.org/10.1063/1.97502 (2 pages) | Cited 11 times

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Néel‐type surface magnetic wall structure is observed on thick samples such as 1.4‐μm‐thick Permalloy polycrystal film and 1‐μm‐thick Co‐based amorphous films. The structure is observed by using spin‐polarized scanning electron microscopy. These observations are consistent with Hubert’s two‐dimensional domain wall model for thick films [Z. Angew. Phys. 32, 58 (1971)].
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.50.Bb Fe and its alloys
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