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20 Oct 1986

Volume 49, Issue 16, pp. 989-1045


Effective saturable absorber for KrF lasers

Irving J. Bigio and Scott J. Thomas

Appl. Phys. Lett. 49, 989 (1986); http://dx.doi.org/10.1063/1.97467 (3 pages) | Cited 4 times

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We report what we believe is the first demonstration of an effective and scalable saturable absorber for KrF lasers. Our measurements show that a 10‐cm path length of ozone (O3) at a partial pressure ∼1 Torr will attenuate a flux of less than 50 mJ/cm2 by a factor ∼50 (∼2% transmission), while allowing transmission of ∼90% for energy densities above 1 J/cm2.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.80.Eh Autoionization, photoionization, and photodetachment
42.60.Fc Modulation, tuning, and mode locking

Lattice constant changes and electro‐optic effects in proton‐exchanged LiNbO3 optical waveguides

Makoto Minakata, Kouichi Kumagai, and Shojiro Kawakami

Appl. Phys. Lett. 49, 992 (1986); http://dx.doi.org/10.1063/1.97468 (3 pages) | Cited 31 times

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Lattice constants and electro‐optic constants have been measured on proton‐exchanged LiNbO3 single crystals by means of the x‐ray rocking curve method and the phase modulation technique to examine the relationship between the refractive index and the strain, and the degradation of the electro‐optic effect.
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78.20.Jq Electro-optical effects
42.79.Gn Optical waveguides and couplers
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
61.66.Fn Inorganic compounds

Dynamics and tunability of a small optically pumped cw far‐infrared laser

Henry O. Everitt, David D. Skatrud, and Frank C. DeLucia

Appl. Phys. Lett. 49, 995 (1986); http://dx.doi.org/10.1063/1.97469 (3 pages) | Cited 18 times

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We report the development of an ultrasmall, optically pumped cw far‐infrared (FIR) laser that provides substantial tunability. This laser operates at pressures significantly higher than the maximum allowed by currently accepted theory. We also report the development of a new theoretical model for diffusion limited optically pumped FIR lasers which accounts for this behavior. It is shown that the consideration of additional higher energy vibrational states, along with appropriate energy transfer mechanisms, fundamentally alters the behavior of the system in the high pressure, high pump intensity regime. Although 13CH3F is used for both the experimental demonstration and the theoretical model, the concept is general and should apply to all diffusion relaxed FIR lasers.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Nonlinear optical processes in a polydiacetylene measured with femtosecond duration laser pulses

G. M. Carter, J. V. Hryniewicz, M. K. Thakur, Y. J. Chen, and S. E. Meyler

Appl. Phys. Lett. 49, 998 (1986); http://dx.doi.org/10.1063/1.97470 (3 pages) | Cited 65 times

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The temporal response of the third‐order nonlinear optical susceptibility in poly bis( p‐toluene sulfonate) of 2,4‐hexadiyne‐1,6 diol was determined by time‐resolved degenerate four‐wave mixing using tunable dye laser pulses with 300 fs duration. In the material’s absorption region these experiments were combined with saturated absorption techniques yielding a measurement for the excited state lifetime of 1.8 ps. Off resonance the nonlinear response was determined to be optical pulse width limited.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Hybrid phase conjugator/modulators using self‐pumped 0°‐cut and 45°‐cut BaTiO3 crystals

David M. Pepper

Appl. Phys. Lett. 49, 1001 (1986); http://dx.doi.org/10.1063/1.97504 (3 pages) | Cited 11 times

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We report on the demonstration of a simple, passive, alignment‐free retromodulator/conjugator. By applying a time‐varying electric field across a self‐pumped phase conjugate mirror, simultaneous wave front reversal and temporal modulation encoding occur within the same volume. With modest signal fields (∼400 V/cm), we observe >90% depth‐of‐phase modulation, with a measured bandwidth in excess of 1 MHz (scalable to >10 GHz), and with excellent conjugation fidelity. We also demonstrate, for the first time, self‐pumped conjugation using a 45°‐cut crystal of BaTiO3 with improved performance: 62% conjugate reflectivity, 100% depth‐of‐phase modulation at ∼120 V/cm, and faster conjugate‐wave build‐up time (by a factor of ∼3). Applications of these devices to high modulation‐index and high optical‐power‐handling modulators, remote fiber sensors, and mode‐locked phase conjugate resonators are discussed.
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42.79.Hp Optical processors, correlators, and modulators
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

High peak power and gateable picosecond optical pulses from a diode array traveling‐wave amplifier and a mode‐locked diode laser

John R. Andrews and Robert D. Burnham

Appl. Phys. Lett. 49, 1004 (1986); http://dx.doi.org/10.1063/1.97505 (3 pages) | Cited 8 times

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A traveling‐wave amplifier made from an AlGaAs laser diode array has been used to selectively amplify individual pulses from a 250‐MHz pulse train of a mode‐locked laser diode. A coherent average output power of 35.3 mW was obtained for 14.2 mW incident on the final objective. Peak powers as high as 4.75 W have been obtained with application of both continuous and pulsed current to the amplifier. This represents a 5.7‐fold enhancement of the peak power over the power of the incident signal. When the mode‐locked laser source had a single spatial mode, the amplifier output was dominated by a single lobe, ∼0.82° wide.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Short cavity GaAs/AlGaAs multiquantum well lasers by dry etching

Tonao Yuasa, Tomoyuki Yamada, Kiyoshi Asakawa, Sumio Sugata, Makoto Ishii, and Mamoru Uchida

Appl. Phys. Lett. 49, 1007 (1986); http://dx.doi.org/10.1063/1.97630 (3 pages) | Cited 10 times

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A reactive ion beam etching method with Cl2 plasma is applied to fabricate short cavity GaAs/AlGaAs multiquantum well lasers grown by molecular beam epitaxy. Threshold currents as low as 38 mA are achieved for the 20‐μm‐long cavity lasers. The very short cavity lasers show single longitudinal mode operation under pulsed conditions. Cavity length dependence of the threshold current is also investigated for the dry‐etched lasers with cavity lengths varying from 20 to 500 μm.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Chemical beam epitaxial growth of very low threshold Ga0.47In0.53As/InP double‐heterostructure and multiquantum well lasers

W. T. Tsang

Appl. Phys. Lett. 49, 1010 (1986); http://dx.doi.org/10.1063/1.97455 (3 pages) | Cited 10 times

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We report the successful preparation by chemical beam epitaxy and performance characteristics of Ga0.47In0.53As/InP double‐heterostructure (DH) and multiquantum well (MQW) lasers emitting at 1.47–1.72 μm. The very low threshold current densities Jth of 1.3 kA/cm2 and 1.5 kA/cm2 obtained from DH and MQW laser wafers, respectively, suggest that the present materials and heterointerfaces are superior to those obtained previously by other techniques. In fact, these Jth’s are the lowest obtained thus far for such lasers. Differential quantum efficiency of ∼18% per facet was obtained for both DH and MQW lasers. Furthermore, we were able to show that there was a definite improvement in the threshold‐temperature dependence characteristic coefficient T0 from ∼35–45 K for DH laser wafers to ∼65–80 K for MQW laser wafers in contrast to previous experimental results.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Effect of gain nonlinearities on period doubling and chaos in directly modulated semiconductor lasers

Govind P. Agrawal

Appl. Phys. Lett. 49, 1013 (1986); http://dx.doi.org/10.1063/1.97456 (3 pages) | Cited 52 times

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The mode gain in semiconductor lasers decreases with an increase in power due to nonlinear processes such as spectral hole burning. When these small nonlinearities are included in the single‐mode rate equations, it is found that they can eliminate the previously predicted sequence of period‐doubling bifurcations leading to chaos in directly modulated semiconductor lasers. For InGaAsP lasers used in optical communication systems, the nonlinear effects are strong enough that the possibility of chaotic behavior should be of no concern. The results also show that gain nonlinearities should be included when gain switching is used for the generation of picosecond pulses.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics

Surface acoustic wave acousto‐electro‐optic effect

P. Das, A. V. Scholtz, A. J. Urillo, D. M. Litynski, and D. Shklarsky

Appl. Phys. Lett. 49, 1016 (1986); http://dx.doi.org/10.1063/1.97457 (3 pages) | Cited 1 time

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A new device which combines both acousto‐optic and electro‐optic effects in one integrated manner using surface acoustic wave technology has been implemented and offers unique advantages. In particular, this permits an additional input port for information which leads to compact implementation and simplified architecture in optical signal processing applications. The objective of this letter is to present some theoretical and experimental results in the Raman–Nath regime. These are found to agree over the range of investigation.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
43.35.Pt Surface waves in solids and liquids
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
78.20.Jq Electro-optical effects

Miniature high current metal ion source

I. G. Brown, J. E. Galvin, R. A. MacGill, and R. T. Wright

Appl. Phys. Lett. 49, 1019 (1986); http://dx.doi.org/10.1063/1.97458 (3 pages) | Cited 67 times

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A small, simple ion source for the production of high brightness beams of metal ions is described. A metal vapor vacuum arc discharge is used to establish the high density plasma from which the ion beam is extracted. The source is finger sized, and can produce pulsed metal ion beams with current up to the 10‐mA range.
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29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
07.77.-n Atomic, molecular, and charged-particle sources and detectors
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
52.50.Dg Plasma sources

New device to generate Si2H6 for amorphous silicon depositions

C. R. Dickson

Appl. Phys. Lett. 49, 1022 (1986); http://dx.doi.org/10.1063/1.97459 (3 pages)

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A new device is described for continuous conversion of pure silane into disilane in yields up to 40%. The device was used in line with an amorphous silicon deposition system to grow 1‐μm‐thick films at 300 °C. The minority‐carrier diffusion length measured on one of these films was 0.3 μm at one sun illumination. The device can also be used with a synthesis station to collect large quantities of pure disilane. The absence of hydrocarbons, chlorosilanes, and siloxanes at the 10–100 ppm levels was established by analysis of a collected disilane sample.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
52.80.Vp Discharge in vacuum

Determination of gap state density in polycrystalline silicon by field‐effect conductance

G. Fortunato and P. Migliorato

Appl. Phys. Lett. 49, 1025 (1986); http://dx.doi.org/10.1063/1.97460 (3 pages) | Cited 81 times

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We have obtained the density of states (DOS) in polycrystalline silicon from the analysis of the field‐effect conductance. The DOS exhibits a U‐shaped distribution with an exponential band tail. The method is very sensitive and accounts for the effect of film morphology and differences in device processing (e.g., post‐hydrogenation).
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71.20.-b Electron density of states and band structure of crystalline solids
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.De Semiconductor-device characterization, design, and modeling

Interpretation of quantum yields exceeding unity in photoelectrochemical systems

Marek Szklarczyk and Roland E. Allen

Appl. Phys. Lett. 49, 1028 (1986); http://dx.doi.org/10.1063/1.97461 (3 pages) | Cited 1 time

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In photoelectrochemical systems involving light shining on a semiconductor interfaced with an electrolyte, the quantum yield as a function of photon frequency ν is observed to exhibit a peak at hν≊2Eg, where Eg is the band gap of the semiconductor. The maximum in this peak is sometimes found to exceed unity. We provide an interpretation involving surface states and inelastic electron‐electron scattering. The theory indicates that the effect should be observable for p‐type semiconductors, but not n‐type.
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73.40.Mr Semiconductor-electrolyte contacts
72.40.+w Photoconduction and photovoltaic effects
82.47.-a Applied electrochemistry
84.60.Jt Photoelectric conversion

Activated carrier density profile and scattering rate measurements of implanted and annealed silicon using infrared attenuated total reflection

Jeff F. Young, H. R. Jensen, and Martine Simard‐Normandin

Appl. Phys. Lett. 49, 1031 (1986); http://dx.doi.org/10.1063/1.97462 (3 pages) | Cited 1 time

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A nondestructive infrared attenuated total reflection technique for measuring activated carrier density profiles and elastic scattering rates of ion implanted and annealed semiconductor wafers is described. The results obtained using this technique on annealed B and BF2 implanted Si wafers are presented and compared with the respective secondary ion mass spectroscopy and spreading resistance profiles.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Dp General theory, scattering mechanisms
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals

Surface stoichiometry and reaction kinetics of molecular beam epitaxially grown (001) CdTe surfaces

J. D. Benson, B. K. Wagner, A. Torabi, and C. J. Summers

Appl. Phys. Lett. 49, 1034 (1986); http://dx.doi.org/10.1063/1.97463 (3 pages) | Cited 40 times

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Reflection high‐energy electron diffraction desorption studies have been performed on epitaxial (001) CdTe surfaces. Both Cd and Te desorption from CdTe were observed to follow a simple first order rate law. Activation energies of 1.95 and 7.70 eV were found for Te and Cd, respectively, on the CdTe surface. The congruent evaporation temperature was determined to be 340 °C. Under normal growth conditions (a substrate temperature of 300 °C and growth rate of 1 μm/h) a Te‐stabilized surface of (001) CdTe was found. The implications of these findings on high‐quality crystalline growth are discussed.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Dv Composition, segregation; defects and impurities
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

X‐ray photoemission core level determination of the GaSb/AlSb heterojunction valence‐band discontinuity

G. J. Gualtieri, G. P. Schwartz, R. G. Nuzzo, and W. A. Sunder

Appl. Phys. Lett. 49, 1037 (1986); http://dx.doi.org/10.1063/1.97464 (3 pages) | Cited 33 times

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The valence‐band discontinuity ΔEv has been determined for the (100) GaSb/AlSb strained‐layer heterojunction with a room‐temperature lattice mismatch of 0.65%, using x‐ray photoemission core level spectroscopy. For 30 Å epitaxial layers of AlSb grown on GaSb, the measured valence‐band offset was ΔEv=0.40±0.15 eV. The reverse growth sequence consisting of a thin GaSb layer grown on an AlSb buffer exhibited the same valence‐band offset, indicating that for the (100) oriented heterojunction ΔEv is not strongly affected by the growth sequence.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.65.-b Surface treatments

Effect of post‐oxidation anneal on ultrathin SiO2 gate oxides

Maurizio Arienzo, Leonello Dori, and Thomas N. Szabo

Appl. Phys. Lett. 49, 1040 (1986); http://dx.doi.org/10.1063/1.97465 (3 pages) | Cited 8 times

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Ultrathin silicon oxide films 5–6 nm thick have been grown in a double‐walled furnace and annealed in N2 and Ar at temperatures varying between 850 and 1100 °C. The breakdown field distribution obtained is very tight and centered above 11 MV/cm for as‐grown oxides at 850 °C. The oxides that received a post‐oxidation anneal (POA) at 1000 °C show a consistent improvement in breakdown field distribution and breakdown charge density as compared to the oxides annealed at lower temperatures. Furthermore, under high field current stress, oxides with a POA at 1000 °C show a positive voltage flatband Vfb shift, while oxides with POA at a temperature T<1000 °C show a negative Vfb shift. These results point out the efficacy of a high‐temperature POA of 5–6 nm oxides on breakdown strength and on the reduction of some defects responsible for the positive charge trapping.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
81.65.-b Surface treatments
73.61.Ng Insulators
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Optical spectroscopy of ultrasmall structures etched from quantum wells

K. Kash, A. Scherer, J. M. Worlock, H. G. Craighead, and M. C. Tamargo

Appl. Phys. Lett. 49, 1043 (1986); http://dx.doi.org/10.1063/1.97466 (3 pages) | Cited 176 times

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We have studied the photoluminescence and photoexcitation spectra of ultrasmall structures, of approximately 500 Å in dimension, which we refer to as quantum ribbons and quantum disks. These are fabricated from GaAs‐AlGaAs quantum wells grown by molecular beam epitaxy and patterned by electron beam lithography. Contrary to our expectation, photoluminescence from these structures is extremely efficient. The excitation spectra of the two types of small structures differ greatly from each other and from that of the as‐grown quantum wells. These differences may be a result of the confinement of the carriers in these small structures.
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78.40.Fy Semiconductors
75.20.Ck Nonmetals
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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