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3 Nov 1986

Volume 49, Issue 18, pp. 1129-1215

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Fast shrinkage of oxidation stacking faults during O2/NF3 oxidation of silicon

U. S. Kim and R. J. Jaccodine

Appl. Phys. Lett. 49, 1201 (1986); http://dx.doi.org/10.1063/1.97414 (3 pages) | Cited 1 time

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The behavior of oxidation‐induced stacking faults (OSF’s) during the O2/NF3 oxidation of silicon has been investigated in the temperature range of 850–1100 °C. A very fast shrinkage rate of pregrown OSF in silicon and a nonlinear shrinkage rate with time have been observed. The shrinkage rate of OSF decreases as the oxidation time is increased. It is proposed that the fast OSF shrinkage is due to excessive vacancy flux as a result of the reaction of fluorine at the Si/SiO2 interface during the initial transient state, and subsequently the shrinkage rate is reduced as the steady‐state condition of vacancy‐interstitial recombination is approached. It has also been found that no OSF’s are generated even when mechanical damage by abrasion is done prior to oxidation.
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61.72.Nn Stacking faults and other planar or extended defects
61.72.jd Vacancies
61.72.jj Interstitials
81.65.-b Surface treatments

In situ x‐ray topographic observation of dislocation behavior in In‐doped GaAs crystals

S. Tohno, S. Shinoyama, A. Katsui, and H. Takaoka

Appl. Phys. Lett. 49, 1204 (1986); http://dx.doi.org/10.1063/1.97415 (3 pages) | Cited 7 times

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This letter describes the results of in situ observations of dislocation behavior in In‐doped GaAs crystals at high temperatures using synchrotron radiation topography and high‐temperature stressing apparatus. The generation and propagation processes of dislocations in a preyield stage have been investigated by making a comparison with undoped crystals. We find that there is a one‐directional predominance in the generation and propagation of dislocations in In‐doped crystals.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Dv Composition, segregation; defects and impurities

Effect of substrate temperature on the nucleation of glow discharge hydrogenated amorphous silicon

R. W. Collins and J. M. Cavese

Appl. Phys. Lett. 49, 1207 (1986); http://dx.doi.org/10.1063/1.97416 (3 pages) | Cited 3 times

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The effect of substrate temperature (Ts) on the initial nucleation of hydrogenated amorphous silicon (a‐Si:H) prepared by glow discharge has been studied using an in situ ellipsometry probe. Evidence in the ellipsometry data for clustering of Si–Si bonds at nucleation centers, for films prepared with Ts ∼250 °C, gradually disappears as Ts is reduced below ∼200 °C. This indicates that the clustering process accompanies defect reduction during growth commonly observed in glow discharge a‐Si:H as Ts is increased. For Ts >200 °C, a sufficiently high surface mobility may enable the depositing species to bind at lower energy sites, thus explaining the observed results.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.55.-a Thin film structure and morphology

Macromolecular electronic device: Field‐effect transistor with a polythiophene thin film

A. Tsumura, H. Koezuka, and T. Ando

Appl. Phys. Lett. 49, 1210 (1986); http://dx.doi.org/10.1063/1.97417 (3 pages) | Cited 369 times

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The first solid‐state field‐effect transistor has been fabricated utilizing a film of an organic macromolecule, polythiophene, as a semiconductor. The device characteristics have been optimized by controlling the doping levels of the polymer. The device is a normally off type and the source (drain) current can be modulated by a factor of 102–103 by varying the gate voltage. The carrier mobility and the transconductance have also been determined to be ∼10−5 cm2/V s and 3 nS, respectively, by means of electrical measurements.
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85.30.Tv Field effect devices
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Le Polymers; organic compounds (including organic semiconductors)
85.30.De Semiconductor-device characterization, design, and modeling

Projection printing of gold micropatterns by photochemical decomposition

Thomas H. Baum, Ernesto E. Marinero, and Carol R. Jones

Appl. Phys. Lett. 49, 1213 (1986); http://dx.doi.org/10.1063/1.97418 (3 pages) | Cited 14 times

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Gold micropatterns have been generated by the laser photolysis of dimethylgold (III) acetylacetonate, Me2Au(acac), in the vapor phase. Linewidths as fine as 2 μm were readily obtained utilizing a simple optical projection system comprised of a 4× projection lens, a lithographic photomask, and the UV output from an excimer laser. The single‐step, dry process for selectively producing metal patterns is highlighted.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.-b Surface treatments
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
82.50.-m Photochemistry
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