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10 Nov 1986

Volume 49, Issue 19, pp. 1221-1312

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Novel electrostatic mechanism in the thermal instability of z‐cut LiNbO3 interferometers

Perry Skeath, C. H. Bulmer, S. C. Hiser, and W. K. Burns

Appl. Phys. Lett. 49, 1221 (1986); http://dx.doi.org/10.1063/1.97419 (3 pages) | Cited 11 times

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Experimental data from z‐cut LiNbO3 Mach–Zehnder interferometers show that electrical contact to the device electrodes leads to the large thermal instability of the intrinsic phase bias. Withdrawing contact from the electrodes causes the thermal instability to virtually disappear. A model is proposed in which contact to the electrodes creates strong gradients in the local surface potential near the electrodes when unscreened pyroelectrically induced surface charges are present, independent of whether the probes are floating or grounded. The resulting differential electric field strength in the interferometer branches gives rise to the observed thermal instability, which is five orders of magnitude larger than the calculated instability due to the pyroelectric effect alone. The model of the instability mechanism is used to suggest methods of reducing the instability.
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07.60.Ly Interferometers
42.82.-m Integrated optics
78.20.Jq Electro-optical effects
77.70.+a Pyroelectric and electrocaloric effects

Experimental observation of polarization instability in a birefringent optical fiber

S. Trillo, S. Wabnitz, R. H. Stolen, G. Assanto, C. T. Seaton, and G. I. Stegeman

Appl. Phys. Lett. 49, 1224 (1986); http://dx.doi.org/10.1063/1.97420 (3 pages) | Cited 61 times

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See Also: Erratum

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We present the first experimental demonstration of spatial instability in the nonlinear evolution of the state of polarization of an intense light beam in a birefringent Kerr‐like medium. As the peak power crosses the threshold for the instability, we observed strong intensity‐dependent power transfer between the two counter‐rotating circularly polarized waves propagating along a birefringent optical fiber. The experimental results agree well with the theory.
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42.81.Gs Birefringence, polarization
42.81.Dp Propagation, scattering, and losses; solitons
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Integrated external cavity laser

N. K. Dutta, T. Cella, A. B. Piccirilli, and R. L. Brown

Appl. Phys. Lett. 49, 1227 (1986); http://dx.doi.org/10.1063/1.97421 (3 pages) | Cited 8 times

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The fabrication and performance characteristics of single frequency integrated external cavity lasers of the coupled cavity type and the distributed Bragg reflector type are described. The active cavity section of these devices utilizes the double channel planar buried heterostructure scheme for current confinement. The lasers emit near 1.55 μm. The threshold current of these lasers is in the range 70–120 mA. cw linewidth of 7 MHz has been obtained for a 2‐mm‐long laser at an output power of 3 mW. We believe lasers with longer external cavity should exhibit lower cw linewidths.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Hydrogen abstraction from hydrogenated amorphous silicon surface by hydrogen atoms

Yasuji Muramatsu and Norikuni Yabumoto

Appl. Phys. Lett. 49, 1230 (1986); http://dx.doi.org/10.1063/1.97422 (3 pages) | Cited 13 times

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HD formation reaction was investigated in H2 plasma over deuterium‐incorporating hydrogenated amorphous silicon (a‐Si:H:D). The activation energy of the reaction was determined to be 2.4±0.7 kcal mol−1, which was consistent with the abstraction reaction of hydrogen from some silane derivatives by hydrogen atoms. The HD formation reaction could be explained by the hydrogen abstraction reaction. The hydrogen abstraction from a‐Si:H surface by H atoms is thought to be one of the elementary growing processes of an a‐Si:H in a SiH4‐H2 plasma.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
52.40.Hf Plasma-material interactions; boundary layer effects
82.20.Pm Rate constants, reaction cross sections, and activation energies
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)

Ambient dependence of metal diffusion through a less‐electronegative metal layer

Chin‐An Chang and Helen L. Yeh

Appl. Phys. Lett. 49, 1233 (1986); http://dx.doi.org/10.1063/1.97423 (3 pages) | Cited 2 times

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The diffusion of metals through a less‐electronegative metal layer is studied for its dependence on ambient gases. When the diffusion is essentially one directional with little interdiffusion, the observed ambient dependence is in agreement with that described by the surface potential model proposed earlier. An enhanced diffusion is expected when the ambient increases the work function of the less‐electronegative metal through which the diffusion of the more‐electronegative one is studied. This has been observed for the diffusion of Au and Cu across the intermediate Ni layer in the Au/Ni/Cu structure under both oxygen and hydrogen, and for the outdiffusion of Cu through Ni in the Ni/Cu structure by oxygen.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
73.30.+y Surface double layers, Schottky barriers, and work functions

Reaction of titanium with silicon nitride under rapid thermal annealing

A. E. Morgan, E. K. Broadbent, and D. K. Sadana

Appl. Phys. Lett. 49, 1236 (1986); http://dx.doi.org/10.1063/1.97424 (3 pages) | Cited 22 times

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30–90 nm Ti films sputter deposited onto 50 nm Si3N4 have been rapid thermal annealed for 30 s in Ar and N2 ambients, and the phases formed identified using Auger electron spectroscopy, transmission electron microscopy, and electron diffraction. Reaction at 900 °C produces TiN surface and interfacial layers and an intermediate TiSi2 layer. The Ti‐Si‐N ternary phase diagram is used to explain the reaction sequence.
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68.55.Nq Composition and phase identification
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Electrical and optical properties of sputtered TiNx films as a function of substrate deposition temperature

T. P. Thorpe, S. B. Qadri, S. A. Wolf, and J. H. Claassen

Appl. Phys. Lett. 49, 1239 (1986); http://dx.doi.org/10.1063/1.97425 (3 pages) | Cited 7 times

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Characterization results are given for a set of TiNx films grown on sapphire substrates at temperatures between 140 and 850 °C. A relationship between resistivity and spectral reflectivity is established, with highest reflectivities and lowest resistivities observed for the highest substrate temperatures. It is found that grain orientation within the films is random except at the highest deposition temperature where a preferred 100 orientation is indicated. Measurement of the superconducting transition temperature, lattice parameter, and microcrystalline texture of each film has been made and correlated with the stoichiometry, electrical, and optical properties.
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73.61.Ng Insulators
75.20.Ck Nonmetals
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification

Transmission electron microscope study of the initial stage of formation of Pd2Si and Pt2Si

M. O. Aboelfotoh, A. Alessandrini, and F. M. d’Heurle

Appl. Phys. Lett. 49, 1242 (1986); http://dx.doi.org/10.1063/1.97426 (3 pages) | Cited 8 times

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Transmission electron microscopy of the compounds formed from the reaction between amorphous Si and thin (0.5–20 nm) layers of Pd and Pt reveals the early formation of crystalline silicides. The presence of phase in an amorphous state prior to crystallization is not observed. These results appear to be in agreement with earlier results of surface electron spectroscopy studies on these systems.
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68.55.Nq Composition and phase identification
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.55.-a Thin film structure and morphology

Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wells

R. C. Miller, C. W. Tu, S. K. Sputz, and R. F. Kopf

Appl. Phys. Lett. 49, 1245 (1986); http://dx.doi.org/10.1063/1.97427 (3 pages) | Cited 54 times

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Low‐temperature excitation and photoluminescence spectra are described for single GaAs/Al0.37Ga0.63As quantum wells grown by molecular beam epitaxy with and without a 2‐min interruption of growth at the heterointerfaces. The spectra from samples grown with interruption include well‐resolved multiple sharp peaks which are due to changes in well thickness of one monolayer and to bound excitons. These peaks are as narrow as 1.0, 1.7, and 6.0 meV for single wells of width 57, 28, and 17 Å, respectively.
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78.40.Fy Semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Self‐consistent analysis of resonant tunneling current

Hiroaki Ohnishi, Tsuguo Inata, Shunichi Muto, Naoki Yokoyama, and Akihiko Shibatomi

Appl. Phys. Lett. 49, 1248 (1986); http://dx.doi.org/10.1063/1.97428 (3 pages) | Cited 91 times

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We investigated the current‐voltage characteristics of the double barrier, resonant tunneling structure, using a self‐consistent method. We note the significance of the effects of band bending and buildup of space charge in the quantum well. For the peak current, our calculated results agree with the measured results very well. However, the measured valley current is much greater than the calculated values.
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73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Study of nonstoichiometry in undoped semi‐insulating GaAs using precise lattice parameter measurements

Masato Nakajima, Takashi Sato, Tomoki Inada, Tsuguo Fukuda, and Koichi Ishida

Appl. Phys. Lett. 49, 1251 (1986); http://dx.doi.org/10.1063/1.97377 (3 pages) | Cited 7 times

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Nonstoichiometry in undoped semi‐insulating GaAs grown by the liquid‐encapsulated Czochralski technique has been evaluated by absolute lattice parameter measurements using the Bond method. The lattice parameter increases with increasing As atom fraction in the initial melt. The observed range of lattice parameters and the variation along the growth direction suggest that the solidus curve in the phase diagram extends to the As‐rich side than to the Ga‐rich side, and the congruent point is located on the stoichiometric point or the slightly As‐rich side.
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61.50.Nw Crystal stoichiometry
81.30.Dz Phase diagrams of other materials
61.66.Fn Inorganic compounds

New omnipresent electron paramagnetic resonance signal in as‐grown semi‐insulating liquid encapsulation Czochralski GaAs

U. Kaufmann, M. Baeumler, J. Windscheif, and W. Wilkening

Appl. Phys. Lett. 49, 1254 (1986); http://dx.doi.org/10.1063/1.97378 (3 pages) | Cited 18 times

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Electron paramagnetic resonance studies on as‐grown semi‐insulating liquid encapsulation Czochralski (LEC) GaAs at 35 GHz have revealed a new resonance labeled FR3. It is consistently present in LEC material but usually unobservable in Bridgman samples, thus strongly indicating that the defect involved contains boron. The center has trigonal symmetry and is electrically active. Its spectrum indicates a d 9 or p5 one‐hole configuration. We tentatively identify FR3 with a Ga antisite complex, Ga−As ‐B0Ga.
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78.40.Fy Semiconductors
76.30.Mi Color centers and other defects
61.72.J- Point defects and defect clusters

Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers

T. Won, G. Munns, R. Houdré, and H. Morkoç

Appl. Phys. Lett. 49, 1257 (1986); http://dx.doi.org/10.1063/1.97379 (3 pages) | Cited 14 times

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We have studied the electrical characteristics of p‐GaAs/n‐Si (100) heterojunction diodes grown by molecular beam epitaxy in an effort to determine the interface polarity. A Ga or As pre‐exposure was used prior to the growth of p‐GaAs on n‐Si substrates to prevent antiphase domains. The Ga prelayer induces a shift in the built‐in voltage of −0.2 V, while the As prelayer shifts it as much as +2.0 V depending upon the As coverage. From the shift, the electrical charge and its polarity can be determined which is not possible by structural analysis. These electrical measurements are very sensitive to the interface charge properties and show very clearly that even with a submonolayer pre‐exposure, antiphase domain‐free material can be obtained.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Kk Junction diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Observation of Bloch conduction perpendicular to interfaces in a superlattice bipolar transistor

J. F. Palmier, C. Minot, J. L. Lievin, F. Alexandre, J. C. Harmand, J. Dangla, C. Dubon‐Chevallier, and D. Ankri

Appl. Phys. Lett. 49, 1260 (1986); http://dx.doi.org/10.1063/1.97380 (3 pages) | Cited 25 times

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We report the first operating bipolar transistor built with an AlGaAs/GaAs superlattice base. High current gain is measured with a suitable design of the bipolar transistor structure. Experimental results are in good agreement with a Bloch to hopping transition which is very sensitive to the AlGaAs barrier thickness. This interpretation is supported by a detailed numerical simulation reproducing the static Ic(Vce,Ib) transistor transfer data.
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85.30.Pq Bipolar transistors
73.40.-c Electronic transport in interface structures

Investigation of orientation effect on contact resistance in selectively doped AlGaAs/GaAs heterostructures

M. Kamada, T. Suzuki, F. Nakamura, Y. Mori, and M. Arai

Appl. Phys. Lett. 49, 1263 (1986); http://dx.doi.org/10.1063/1.97381 (3 pages) | Cited 13 times

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We established that the contact resistance to the two‐dimensional electron gas (2DEG) in selectively doped n‐AlGaAs/GaAs heterostructure is crystal orientation dependent. The contact resistance in the [011] direction is the lowest and that in the [011] direction is the highest. The contact resistance monotonically changes between the [011] and [011] directions. We also find the sheet resistance dependence of the contact resistance.
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73.40.Cg Contact resistance, contact potential
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.30.Tv Field effect devices

‘‘New donors’’ in silicon: A quantum well controlled conductivity

A. Henry, J. L. Pautrat, P. Vendange, and K. Saminadayar

Appl. Phys. Lett. 49, 1266 (1986); http://dx.doi.org/10.1063/1.97627 (3 pages) | Cited 4 times

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The first stages of the formation of the so called ‘‘new donors’’ is studied by annealing initially n‐type Czochralski silicon at 580 °C for 24–360 h. The analysis of electrical properties using the admittance spectroscopy technique reveals that the freezing of carriers is controlled by an activation energy of 20 meV, and a discrete level is detected at 19 meV. These effects are tentatively ascribed to levels localized within quantum wells surrounding small positively charged oxide precipitates.
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72.80.Cw Elemental semiconductors
73.40.Ty Semiconductor-insulator-semiconductor structures
73.30.+y Surface double layers, Schottky barriers, and work functions
78.40.Fy Semiconductors

Elimination of end‐of‐range and mask edge lateral damage in Ge+ preamorphized, B+ implanted Si

A. C. Ajmera and G. A. Rozgonyi

Appl. Phys. Lett. 49, 1269 (1986); http://dx.doi.org/10.1063/1.97382 (3 pages) | Cited 46 times

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The problems of residual extended defects due to end‐of‐range ion implantation damage and mask edge lateral damage have been solved in this study for shallow boron junctions preamorphized via germanium ion implantation. Defect elimination has been achieved by adjusting the germanium ion energy, dose, and annealing temperature and ambient to minimize the local interstitial point defect concentration and optimize the role of the free surface in defect annihilation. For the combination of shallow, low dose 40 or 60 keV/2×1014 cm−2 Ge+ and 8 keV/1×1015 cm−2 B+ implants, a defect‐free structure was obtained following a 1050 °C, 10 s rapid thermal anneal (RTA) in a nonoxidizing Ar ambient. For these samples, boron profiles determined using secondary ion mass spectroscopy (SIMS) showed the junction depth to be approximately 0.17 μm at a background doping of 1×1017 cm−3 with a sheet resistance of 136 Ω/☒.
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61.80.Jh Ion radiation effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Amorphous SiN:H dielectrics with low density of defects

S. Hasegawa, M. Matuura, and Y. Kurata

Appl. Phys. Lett. 49, 1272 (1986); http://dx.doi.org/10.1063/1.97383 (3 pages) | Cited 32 times

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Amorphous SiNx:H films were prepared by rf glow discharge (GD) of SiH4‐N2‐H2 mixtures at 300 °C using a new decomposition technique. The optical gap Eg increases slowly with the ratio N2/SiH4 up to a critical gap Egc of 2.5–3.0 eV, and then rapidly increases up to 5.3 eV. The spin density Ns from electron spin resonance of Si dangling bonds increases with N2/SiH4 until Eg reaches Egc. Above Egc, Ns rapidly decreases in contrast with that of conventional GD films, but in similarity to pyrolytic films. The slope B in Tauc equation for optical absorption corresponds well with Ns.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
75.20.Ck Nonmetals
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
76.30.Mi Color centers and other defects

Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes

J. Cibert, P. M. Petroff, G. J. Dolan, S. J. Pearton, A. C. Gossard, and J. H. English

Appl. Phys. Lett. 49, 1275 (1986); http://dx.doi.org/10.1063/1.97384 (3 pages) | Cited 282 times

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Carrier confinement to one and zero degrees of freedom has been achieved in artificial quantum well wires and boxes fabricated in the GaAs‐GaAlAs system. Low‐temperature cathodoluminescence measurements show new luminescence lines attributed to transitions arising from ground and excited levels of electrons within these low dimensional structures.
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75.20.Ck Nonmetals
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.60.Hk Cathodoluminescence, ionoluminescence
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Emitter grading in AlGaAs/GaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition

K. Taira, C. Takano, H. Kawai, and M. Arai

Appl. Phys. Lett. 49, 1278 (1986); http://dx.doi.org/10.1063/1.97385 (3 pages) | Cited 4 times

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The effect of emitter grading on the injection barrier of Al0.3Ga0.7As/GaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition was studied. The barrier height for electrons injected from the emitter was determined from the temperature dependence of collector current. It has been directly confirmed that the barriers for graded heterojunction and GaAs homojunction are comparable. However, the grading enhanced the recombination at the emitter‐base depletion region, which suggests that the hole confinement was reduced.
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85.30.Pq Bipolar transistors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling

New native oxide of InP with improved electrical interface properties

Y. Robach, J. Joseph, E. Bergignat, B. Commere, G. Hollinger, and P. Viktorovitch

Appl. Phys. Lett. 49, 1281 (1986); http://dx.doi.org/10.1063/1.97386 (3 pages) | Cited 14 times

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The electrical properties of InP insulator interface were improved by using a new native oxide between gate insulator and the semiconductor. This phosphorus‐rich oxide identified as In(PO3)y polyphosphate was grown anodically. Capacitance‐voltage measurements on this metal‐insulator‐semiconductor structure yielded an interface state density as low as 4×1010 cm−2 eV−1 and were nearly free of hysteresis in the depletion and accumulation region.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.-b Surface treatments

Fabrication of small laterally patterned multiple quantum wells

A. Scherer and H. G. Craighead

Appl. Phys. Lett. 49, 1284 (1986); http://dx.doi.org/10.1063/1.97387 (3 pages) | Cited 20 times

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A technique of high voltage electron beam lithography and BCl3/Ar reactive ion etching for laterally patterning GaAs/Al0.3Ga0.7As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Trapping of oxygen at homoepitaxial Si‐Si interfaces

R. Hull, J. C. Bean, J. M. Gibson, D. C. Joy, and M. E. Twigg

Appl. Phys. Lett. 49, 1287 (1986); http://dx.doi.org/10.1063/1.97388 (3 pages) | Cited 9 times

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Microstructural studies of Si‐Si interfaces grown by molecular beam epitaxy reveal pockets of oxygen‐rich material for certain substrate preparation conditions. For Czochralski substrates which are cleaned using an argon ion sputtering technique, a high density (about 1011/cm2) of oxygen‐rich pockets about 30 Å in size is observed using cross‐sectional transmission electron microscopy and x‐ray microanalysis for short (less than about 15 s) sputtering times. For longer sputtering times, no significant defect density is observed. Post‐deposition thermal annealing causes a dramatic increase in the density of oxygen‐rich defects, and it is suggested that this is due to trapping of oxygen which has diffused from the bulk of the substrate wafer. For (100) interfaces, no significant dislocation activity is associated with the defects, even for densities up to 1012/cm2. On (111) interfaces, however, a large planar fault density is observed. Ramifications for silicon homoepitaxy are discussed.
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68.35.Dv Composition, segregation; defects and impurities
68.35.Fx Diffusion; interface formation
81.65.-b Surface treatments
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Effect of process conditions on the quality of CdTe grown on InSb by organometallic epitaxy

S. K. Ghandhi, N. R. Taskar, and I. B. Bhat

Appl. Phys. Lett. 49, 1290 (1986); http://dx.doi.org/10.1063/1.97389 (3 pages) | Cited 5 times

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The morphology and crystal quality of CdTe grown on InSb substrates are shown to be critically dependent on the pregrowth stabilization procedure to which the substrate has been subjected. It is shown that layer growth on a dimethylcadmium stabilized InSb substrate results in CdTe layers with a large number of hillocks whereas growth on a diethyltelluride stabilized substrate results in a smooth morphology. These hillocks are initiated by the reaction of dimethylcadmium with the InSb surface; alloys of In‐Cd‐Sb formed at the interface result in deterioration of the layer morphology. This problem can be avoided by growth on a diethyltelluride stabilized surface, at temperatures below 400 °C. Improvement in the layer quality by use of this technique is illustrated by a study of the photoluminescence spectra (PL) of CdTe grown by these two methods. Layers have been grown with a band‐edge PL peak having a full width half‐maximum of 2.1 meV at 12 K. To our knowledge, this is the lowest value for epitaxial layers of CdTe on InSb grown by any technique at the present time.
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68.55.-a Thin film structure and morphology
78.40.Fy Semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Resonant tunneling through a HgTe/Hg1−xCdxTe double barrier, single quantum well heterostructure

M. A. Reed, R. J. Koestner, and M. W. Goodwin

Appl. Phys. Lett. 49, 1293 (1986); http://dx.doi.org/10.1063/1.97390 (3 pages) | Cited 23 times

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Resonant tunneling has been demonstrated through a double barrier, single quantum well HgTe/Hg1−xCdxTe heterostructure for the first time. Negative differential resistance is observable at room temperature, exhibiting a 1.4:1 peak to valley tunnel current ratio. The observation provides direct evidence for the existence of the proposed intrinsic interface state.
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73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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