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10 Nov 1986

Volume 49, Issue 19, pp. 1221-1312

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Electron spin resonance study of high field stressing in metal‐oxide‐silicon device oxides

W. L. Warren and P. M. Lenahan

Appl. Phys. Lett. 49, 1296 (1986); http://dx.doi.org/10.1063/1.97391 (3 pages) | Cited 36 times

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We find that two paramagnetic ‘‘trivalent silicon’’ centers appear to be responsible for damage resulting from Fowler–Nordheim injection of electrons into thermal oxides on silicon.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk Tunneling
61.80.Fe Electron and positron radiation effects
76.30.Mi Color centers and other defects

X‐point excitons in AlAs/GaAs superlattices

E. Finkman, M. D. Sturge, and M. C. Tamargo

Appl. Phys. Lett. 49, 1299 (1986); http://dx.doi.org/10.1063/1.97392 (3 pages) | Cited 140 times

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We have found a long‐lived emission at low temperatures in AlAs/GaAs superlattices with approximately equal thicknesses of AlAs and GaAs and with periods in the range 18–60 Å. The emission shows the nonexponential time decay characteristic of an indirect exciton made allowed by disorder. The exciton is found to be at the zone boundary, and to consist of a Γ hole localized in the GaAs and an AlAs X‐point electron. The disorder is at the AlAs‐GaAs interfaces. There is no ‘‘camel’s back’’ in the exciton dispersion.
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71.35.-y Excitons and related phenomena
78.40.Fy Semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals

High‐resolution x‐ray diffraction and transmission electron microscopy studies of InGaAs/InP superlattices grown by gas‐source molecular beam epitaxy

J. M. Vandenberg, S. N. G. Chu, R. A. Hamm, M. B. Panish, and H. Temkin

Appl. Phys. Lett. 49, 1302 (1986); http://dx.doi.org/10.1063/1.97393 (3 pages) | Cited 28 times

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A three‐crystal geometry has been used for high‐resolution x‐ray diffraction (XRD) along with lattice imaging transmission electron microscopy (TEM) to study two high‐quality InGaAs/InP multiquantum well structures grown on (100) InP. These superlattices were prepared by gas‐source molecular beam epitaxy using a computer controlled system and were found to have excellent optical properties. Cross‐section TEM and the presence of sharp satellite reflections in the XRD profiles demonstrate very smooth interfaces with well‐defined modulated structures which could be derived from a kinematic XRD step model. For one of these superlattices, excellent agreement between the step model and the measurements is obtained when the model assumes that each period consists only of the well and the barrier with ideally sharp interfaces. For the other superlattice an additional approximately 9‐Å‐thick layer of approximate composition In0.47Ga0.53As0.985P0.015 had to be assumed on one side of each quantum well. This additional layer is attributed to substitution of ambient P for 1.5 at. % of the As during growth interruption and is easily eliminated. The comparison of these two structures demonstrates the extreme sensitivity of the high‐resolution XRD method in conjunction with the step model to study very small modifications in superlattice characteristics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.05.C- X-ray diffraction and scattering
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

New processing technique for forming flexible A‐15 superconducting tapes with extremely high critical current densities and magnetic fields

Mireille Treuil Clapp and Donglu Shi

Appl. Phys. Lett. 49, 1305 (1986); http://dx.doi.org/10.1063/1.97394 (3 pages) | Cited 5 times

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Alloys of Nb73Al12Si14.5B0.5 were rapidly quenched using the melt spinning technique to form fine amorphous ribbons. These were then annealed into A‐15 tapes with a variety of grain sizes. The smaller the grain was the more flexible the tape and the higher the critical current density Jc. The best results were obtained for a tape with a grain size of 15 nm; it could be bent to a diameter of 1 mm without breaking and it had a Jc of 3.3×1010 A/m2 at a magnetic field of 20 T.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
81.40.Rs Electrical and magnetic properties related to treatment conditions
74.25.-q Properties of superconductors
81.05.Bx Metals, semimetals, and alloys

Microstructure of magnetron co‐sputtered CoCr thin films

M. Hong, S. Nakahara, R. B. van Dover, and T. Boone

Appl. Phys. Lett. 49, 1308 (1986); http://dx.doi.org/10.1063/1.97395 (3 pages) | Cited 1 time

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Magnetic CoCr films deposited on fused quartz substrates were prepared by the dual‐gun magnetron co‐sputtering technique. The cross‐section transmission electron microscopy studies showed the establishment of a textured columnar structure of the hcp CoCr films. Furthermore, the columnar grains were found to nucleate at the surface of the substrates and grow with the c axis parallel to the film‐normal direction. No initial layer of randomly oriented small equiaxed grains was observed.
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68.55.-a Thin film structure and morphology
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.30.Gw Magnetic anisotropy
FREE

Comment on ‘‘Mobility of Ni versus Zr in an amorphous Ni‐Zr alloy’’ [Appl. Phys. Lett. 48, 517 (1986)]

S. J. Rothman, R. S. Averback, and H. Hahn

Appl. Phys. Lett. 49, 1311 (1986); http://dx.doi.org/10.1063/1.97396 (1 page) | Cited 1 time

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Comments are made on Barbour’s paper concerning the mobility and diffusion of Ni and Zr in amorphous Ni−Zr alloys. Specifically, the method of Barbour et al. cannot, in principle, be used to determine which species moves faster. (AIP)
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66.30.Fq Self-diffusion in metals, semimetals, and alloys
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
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Response to ‘‘Comment on ‘Mobility of Ni versus Zr in an amorphous Ni‐Zr alloy’ ’’ [Appl. Phys. Lett. 49, 1311 (1986)]

J. C. Barbour, M. Nastasi, and J. W. Mayer

Appl. Phys. Lett. 49, 1311 (1986); http://dx.doi.org/10.1063/1.97397 (1 page)

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A response to a comment on  mobility of Ni versus Zr in an amorphous Ni−Zr alloy  is given pointing out the need to use a more detailed model of diffusion. (AIP)
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66.30.Fq Self-diffusion in metals, semimetals, and alloys
68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
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Erratum: ‘‘Ballistic’’ injection devices in semiconductors [Appl. Phys. Lett. 48, 1609 (1986)]

A. F. J. Levi, J. R. Hayes, and R. Bhat

Appl. Phys. Lett. 49, 1312 (1986); http://dx.doi.org/10.1063/1.97641 (1 page) | Cited 1 time

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Abstract Unavailable
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72.20.Dp General theory, scattering mechanisms
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.30.De Semiconductor-device characterization, design, and modeling
99.10.Cd Errata
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