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14 Jul 1986

Volume 49, Issue 2, pp. 55-117


cw operation of GaInAsSb/AlGaAsSb lasers up to 190 K

C. Caneau, A. K. Srivastava, J. L. Zyskind, J. W. Sulhoff, A. G. Dentai, and M. A. Pollack

Appl. Phys. Lett. 49, 55 (1986); http://dx.doi.org/10.1063/1.97350 (3 pages) | Cited 11 times

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Continuous operation of 2.1 μm wavelength Ga0.84In0.16As0.15Sb0.85 /Al0.27Ga0.73As0.04Sb0.96 double heterostructure injection lasers has been achieved up to a temperature of 190 K for the first time. The laser wafers were grown by liquid phase epitaxy. In pulsed operation, broad area devices with active layer thicknesses of 0.8–1.0 μm exhibited room‐temperature threshold current densities as low as 7 kA/cm2.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Analysis of a Y‐junction semiconductor laser array

William Streifer, Peter S. Cross, David F. Welch, and Don R. Scifres

Appl. Phys. Lett. 49, 58 (1986); http://dx.doi.org/10.1063/1.97351 (3 pages) | Cited 9 times

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An analysis of a new type of high power semiconductor laser array is presented. The array consists of parallel, uncoupled waveguides linked at Y junctions in one region. We show that for the lowest threshold array mode all the waveguides oscillate in phase and all (except possibly the outermost) have equal amplitudes. The array mode should be stable above threshold and it radiates in a single‐lobe far‐field pattern if the individual waveguide mode width is comparable to the guide separation.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Intensity discrimination through nonlinear power coupling in birefringent fibers

A. Vatarescu

Appl. Phys. Lett. 49, 61 (1986); http://dx.doi.org/10.1063/1.97352 (3 pages) | Cited 8 times

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The nonlinear coupling of energy between the polarization eigenmodes is shown to affect both the relative phase and amplitude ratio of a light beam propagating in a birefringent fiber. These two quantities determine the polarization state at the output. The general formalism and some specific numerical examples are presented.
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42.81.Dp Propagation, scattering, and losses; solitons
42.81.Gs Birefringence, polarization
42.25.Lc Birefringence
42.65.-k Nonlinear optics

Heteroepitaxy of insulator/metal/silicon structures: CaF2/NiSi2/Si(111) and CaF2/CoSi2/Si(111)

R. W. Fathauer, B. D. Hunt, L. J. Schowalter, Masako Okamoto, and Shin Hashimoto

Appl. Phys. Lett. 49, 64 (1986); http://dx.doi.org/10.1063/1.97353 (3 pages) | Cited 12 times

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Epitaxial insulator (CaF2) layers have been grown on epitaxial metal (CoSi2 and NiSi2) layers on Si(111) by molecular beam epitaxy. The surface morphology and bulk crystallinity are much better for growth on NiSi2, with scanning electron microscopy revealing only small triangular hillocks, and channeling minimum yields as low as 3% measured in the CaF2 using 2.5 MeV 4He+ ions. CaF2 layers grown at 650 °C on CoSi2 consist of a mixture of regions either aligned or rotated 180° with respect to the CoSi2 lattice, while CaF2 layers grown at 550 °C on NiSi2 are of a single orientation, regardless of the orientation of the NiSi2 with respect to the Si substrate.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
77.55.-g Dielectric thin films

Observation of boron acceptor neutralization in silicon produced by CF4 reactive ion etching or Ar ion beam etching

X. C. Mu, S. J. Fonash, and R. Singh

Appl. Phys. Lett. 49, 67 (1986); http://dx.doi.org/10.1063/1.97354 (3 pages) | Cited 16 times

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It is demonstrated, using two very different techniques (viz., CF4 reactive ion etching and Ar ion beam etching), that dry etching exposure causes extensive boron acceptor neutralization in silicon. This boron neutralization is observed to occur as far as microns below the etched surface with etching exposures of only ≂1 min. Neutralization occurs if the temperature does not exceed about 180 °C during etching; it may be annealed out by subsequent exposure to such temperatures. Adsorbed water vapor or, alternatively, hydrogen inherent in the silicon is proposed to provide hydrogen‐related species which cause this neutralization. Protons created in the plasma from these sources, or hydrogen‐related species directly liberated from their sources on or in the solid, may be injected into the silicon during the energetic ion impact constantly present in dry etching. This observation of boron neutralization deep below the etched surface demonstrates that dry etching exposure causes extensive permeation of foreign species into the etched material.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well

H. Morkoç, J. Chen, U. K. Reddy, T. Henderson, and S. Luryi

Appl. Phys. Lett. 49, 70 (1986); http://dx.doi.org/10.1063/1.97355 (3 pages) | Cited 43 times

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We have observed a negative differential resistance (NDR) in a single‐barrier tunneling structure in which electrons tunnel from a doped semiconductor emitter layer into a quantum well (QW) layer and subsequently drift laterally to a specially designed contact. Pronounced NDR is seen already at room temperature and at 77 K the peak to valley (PTV) ratio in current is more than 2:1. Our results lend support to a recent hypothesis by Luryi [Appl. Phys. Lett. 47, 490 (1985)] that the NDR in double‐barrier tunneling structures is not related to a resonant enhancement of the tunneling probability at selected electron energies, but rather originates from tunneling into a system of electron states of reduced dimensionality. For comparison we have also fabricated a QW structure with two tunneling barriers, in which the parameters of the emitter barrier and the QW are identical to those in the single‐barrier structure. In the double‐barrier structure we have obtained current densities as high as 4×104 A/cm2 and a NDR with PTV ratios of 3:1 at 300 K and 9:1 at 77 K.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling

Observation of resonant tunneling in AlGaAs/GaAs triple barrier diodes

T. Nakagawa, H. Imamoto, T. Kojima, and K. Ohta

Appl. Phys. Lett. 49, 73 (1986); http://dx.doi.org/10.1063/1.97356 (3 pages) | Cited 36 times

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Resonant tunneling and accompanying negative differential resistance are observed at 85 K in Al0.4Ga0.6As/GaAs triple barrier diodes, where two GaAs wells are separated by three AlGaAs barriers. Five resonance peaks, one small peak for one bias polarity, one medium and one large peak for each bias polarity, are observed. These are the resonance current peaks from the ground level of a populated well to the ground, the first excited or the second excited level of an adjoining unpopulated well. These are the direct electrical observations of the resonant tunneling between confined electron states in two potential wells of a semiconductor multiheterostructure.
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85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Evidence for excitonic decay of excess charge carriers in high quality GaAs quantum wells at room temperature

D. Bimberg, J. Christen, A. Werner, M. Kunst, G. Weimann, and W. Schlapp

Appl. Phys. Lett. 49, 76 (1986); http://dx.doi.org/10.1063/1.97357 (3 pages) | Cited 26 times

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A comparative study is presented of the room‐temperature decay of laser excited microwave photoconductivity and of cathodoluminescence of high quality GaAs multiple quantum wells grown by molecular beam expitaxy and of high quality GaAs liquid phase epitaxial layers. The results from both experiments are in quantitative agreement and prove that carrier recombination in multiple quantum wells occurs via excitonic decay channels at excess carrier densities less than 1017 cm−3. In contrast, band‐band recombination prevails in three‐dimensional material.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.60.Hk Cathodoluminescence, ionoluminescence
71.35.-y Excitons and related phenomena

Epitaxial growth of silicon by photochemical vapor deposition at a very low temperature of 200 °C

Shoji Nishida, Tsunenori Shiimoto, Akira Yamada, Shiro Karasawa, Makoto Konagai, and Kiyoshi Takahashi

Appl. Phys. Lett. 49, 79 (1986); http://dx.doi.org/10.1063/1.97626 (3 pages) | Cited 38 times

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A novel Si epitaxial growth technique using mercury‐sensitized photochemical vapor deposition has been developed. Epitaxial thin films (300–8000 Å) were grown on (100)Si substrates at 100–300 °C from a gas mixture of Si2H6+SiH2F2+H2 by irradiation of a low pressure mercury lamp (1849,2537 Å). The growth rate, plotted as a function of the reciprocal substrate temperature, represented an activation energy which was found to be a small value of 0.18 eV. Observation of the surface structure by reflective high‐energy electron diffraction showed fine (100) streak patterns for films grown at 200 °C as well as at 250 and 300 °C.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Submicron silicon powder production in an aerosol reactor

Jin Jwang Wu, Richard C. Flagan, and Otto J. Gregory

Appl. Phys. Lett. 49, 82 (1986); http://dx.doi.org/10.1063/1.97358 (3 pages) | Cited 9 times

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Powder synthesis by thermally induced vapor phase reactions is described. The powder generated by this technique consists of spherical, nonagglomerated particles of high purity. The particles are uniform in size, in the 0.1–0.2 μm size range. Most of the particles are crystalline spheres. A small fraction of the spheres are amorphous. Chain agglomerates account for less than 1% of the spherules.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Extraction of Schottky diode parameters from forward current‐voltage characteristics

S. K. Cheung and N. W. Cheung

Appl. Phys. Lett. 49, 85 (1986); http://dx.doi.org/10.1063/1.97359 (3 pages) | Cited 321 times

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It is shown that by using the forward current density‐voltage (J‐V) characteristics of a Schottky diode, a plot of d(V)/d(ln J) vs J and a plot of the function H(J) vs J, where H(J)≡V−n(kT/q)ln(J/A∗∗T2), will each give a straight line. The ideality factor n, the barrier height ϕB, and the series resistance R of the Schottky diode can be determined with one single I‐V measurement. This procedure has been used successfully to study thermal annealing effects of W/GaAs Schottky contacts.
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73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.40.Ns Metal-nonmetal contacts

Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structures

Masahiro Tsuchiya and Hiroyuki Sakaki

Appl. Phys. Lett. 49, 88 (1986); http://dx.doi.org/10.1063/1.97360 (3 pages) | Cited 67 times

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The dependence of current components on GaAs well widths is studied in AlAs/GaAs/AlAs double barrier diode structures having AlAs barriers of 8 atomic layers. It is shown for the first time that the density JRT of resonant current varies from 8×102 to 1.6×104 A cm−2 by the choice of the well width from 9 to 5 nm in accordance with theoretical calculations. Furthermore, one of these diodes shows excellent current‐voltage characteristics at room temperature with a peak to valley ratio of 3, the highest value ever reported.
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73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Hi Surface barrier, boundary, and point contact devices

Electron states in narrow gate‐induced channels in Si

Steven E. Laux and Frank Stern

Appl. Phys. Lett. 49, 91 (1986); http://dx.doi.org/10.1063/1.97361 (3 pages) | Cited 127 times

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Self‐consistent numerical solutions of the Poisson and Schrödinger equations have been obtained for the states of electrons under a narrow gate or under a narrow slit in a metal‐oxide‐silicon structure with an inner and an outer gate. For the cases considered (30‐nm‐wide gate and 80‐nm‐wide slit), the states of motion parallel to the Si‐SiO2 interface are more closely spaced than the states for motion perpendicular to the interface. It should be possible, for the structures considered, to achieve a dynamically one‐dimensional system with an electron density ≲106 cm−1.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Ty Semiconductor-insulator-semiconductor structures
71.23.An Theories and models; localized states

Frequency limit of double barrier resonant tunneling oscillators

D. D. Coon and H. C. Liu

Appl. Phys. Lett. 49, 94 (1986); http://dx.doi.org/10.1063/1.97362 (3 pages) | Cited 52 times

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The frequency limit of negative differential resistance (NDR) devices employing resonant tunneling in double barrier quantum well structures is analyzed. We show that the standard theoretical approach to resonant tunneling together with a unitarity bound leads to a lower bound on NDR which is in turn related to the maximum oscillator frequency. The bound on NDR can be achieved in devices with narrow width resonances. However, too narrow a width can cause Wigner–Eisenbud resonance time delay. These considerations indicate that devices of the type studied by T. C. L. G. Sollner, P. E. Tannenwald, D. D. Peck, and W. D. Goodhue [Appl. Phys. Lett. 45, 1319 (1984)] could oscillate up to roughly 1 THz.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
72.30.+q High-frequency effects; plasma effects
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Silicon nitride films grown on silicon below 300 °C in low power nitrogen plasma

E. Paloura, K. Nauka, J. Lagowski, and H. C. Gatos

Appl. Phys. Lett. 49, 97 (1986); http://dx.doi.org/10.1063/1.97363 (3 pages) | Cited 14 times

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Device quality silicon nitride films ranging in thickness down to 30 Å were successfully grown on silicon at temperatures below 300 °C in a radio frequency (rf) nitrogen plasma. The growth rate was controlled in the range 5–100 Å/h by changing nitrogen pressure, rf power, and growth temperature. Electron microscopy and Auger spectroscopy showed that the films were amorphous, microcrack‐free, close to stoichiometry Si3N4, and formed a sharp interface with the Si substrate. The breakdown voltage of Al‐Si3N4‐Si capacitors was about (1.3±0.2)×107 V/cm and the typical density of the leakage current was below 3×10−7 A/cm2 at 5 V bias for films 70 Å thick.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Diffusion dynamics of holes in InxGa1−xAs/GaAs strained‐layer superlattices

P. L. Gourley, J. J. Wiczer, T. E. Zipperian, and L. R. Dawson

Appl. Phys. Lett. 49, 100 (1986); http://dx.doi.org/10.1063/1.97398 (3 pages) | Cited 9 times

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We investigate the diffusion dynamics of minority‐carrier holes in In0.2Ga0.8As/GaAs strained‐layer superlattices by measuring their diffusion lengths, both parallel and perpendicular to the layers, and recombination lifetime for temperatures between 78 and 300 K. From these data we determine a phenomenological hopping time for interlayer motion. We also estimate the valence‐band barrier heights which govern this motion, by studying the interband quantum well optical transition energies over the same temperature range.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Ey III-V and II-VI semiconductors

Severe loss of dopant activity due to CHF3+CO2 reactive ion etch damage

J. C. Mikkelsen and I‐W. Wu

Appl. Phys. Lett. 49, 103 (1986); http://dx.doi.org/10.1063/1.97399 (3 pages) | Cited 9 times

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We report direct evidence from spreading resistance carrier profiling that an effective reduction of up to 5×1019 carriers cm−3 is caused by etching 10–150 nm of doped silicon with a CHF3+CO2 plasma in a commercial hexode reactor. During an 80‐nm etch of bulk p+‐ and n+‐Si, over 99 and 90% respectively of the carriers are trapped or complexed to a depth extending 200 nm from the etched surface. Thermal annealing at 450 °C restores all of the electrical activity, a behavior which is similar to the recovery of phydrogen‐passivated acceptor impurities. More complicated behavior was observed for carrier deactivation of both p+ and n+ implanted junctions, where only partial recovery occurs after a 450 °C anneal. Further annealing at 850 °C does not reactivate any further p‐type dopant, but a 950 °C anneal does increase the n‐type dopant activity.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
81.65.-b Surface treatments
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

HgTe‐CdTe superlattices: Experimental and theoretical curves of band gap versus HgTe layer thickness

J. Reno, I. K. Sou, J. P. Faurie, J. M. Berroir, Y. Guldner, and J. P. Vieren

Appl. Phys. Lett. 49, 106 (1986); http://dx.doi.org/10.1063/1.97400 (3 pages) | Cited 24 times

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An experimental curve of room‐temperature band gap versus HgTe layer thickness for HgTe‐CdTe superlattices is presented for the first time. The room‐temperature experimental results are compared to theoretical results determined using the envelope function approximation. Also a few values of the band gap at 2 K are given and compared to theoretical predictions. A good agreement between experiment and theory is found.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Diffusion model for the laser oxidation of metallic samples in air

I. Ursu, L. Nanu, and I. N. Mihăilescu

Appl. Phys. Lett. 49, 109 (1986); http://dx.doi.org/10.1063/1.97401 (3 pages) | Cited 16 times

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A model is developed to explain several experimental data previously obtained with laser oxidation of metal samples in air. The main assumption is that the diffusion coefficient of the charged particles changes under the action of laser radiation.
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81.05.Bx Metals, semimetals, and alloys
66.30.Dn Theory of diffusion and ionic conduction in solids
79.20.Ds Laser-beam impact phenomena
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Effects of transparent electrode resistance on the performance characteristics of electrochemichromic cells

H. Kaneko and K. Miyake

Appl. Phys. Lett. 49, 112 (1986); http://dx.doi.org/10.1063/1.97402 (3 pages) | Cited 2 times

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The performance characteristics of WO3 electrochemichromic cells have been studied in connection with the electrical resistance of transparent electrodes and a lumped resistor connected to the electrodes in series. The sheet resistance of transparent electrodes used and the resistance of lumped resistor used are in the range of 10–1250 Ω/☒ and 10–2500 Ω, respectively. The thickness of the WO3 film is ∼2400 Å or ∼4300 Å, and the electrolyte is 1 N H2SO4 aqueous solution containing 10 vol % glycerol. The current pulse form and the change in optical transmittance of experimental cells under operation were observed, and the operating characteristics of electrochemichromic cells have been found to clearly depend on the sheet resistance of transparent electrodes and/or the resistance of a lumped resistor connected serially.
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73.25.+i Surface conductivity and carrier phenomena
82.47.-a Applied electrochemistry
78.20.Jq Electro-optical effects
85.60.Pg Display systems

Scanning electron beam method for examining surfaces in a short focal length magnetic lens

A. N. Broers and P. A. Coane

Appl. Phys. Lett. 49, 115 (1986); http://dx.doi.org/10.1063/1.97349 (3 pages)

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A new scanning electron microscope method for examining the surface of bulk samples is described that uses a short focal length (1 mm), low aberration, magnetic electron lens. The minimum beam size produced by the lens is 2–3 times smaller than the minimum beam size in a conventional secondary electron scanning electron microscope. The new method, in which backscattered electrons are detected with silicon diodes located inside the pole‐piece gap of the lens, allows large area samples such as silicon integrated circuit wafers to be examined, despite the constricted sample region of the lens. The new method also makes it possible to use this type of short focal length lens for electron beam lithography, because it allows alignment marks on the wafers to be detected while the wafers are immersed in the lens. A 1 mm focal length lens produces a beam current density that is more than 20 times higher than that produced by the longer focal length lenses used in conventional electron beam lithography systems.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
41.75.Fr Electron and positron beams
81.65.-b Surface treatments
85.40.Bh Computer-aided design of microcircuits; layout and modeling
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