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24 Nov 1986

Volume 49, Issue 21, pp. 1403-1486

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Semiconductor‐doped glass ion‐exchanged waveguides

T. J. Cullen, C. N. Ironside, C. T. Seaton, and G. I. Stegeman

Appl. Phys. Lett. 49, 1403 (1986); http://dx.doi.org/10.1063/1.97335 (3 pages) | Cited 21 times

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The properties of planar waveguides and directional couplers fabricated by potassium/sodium ion exchange in semiconductor‐doped glasses are described.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.70.Ce Glasses, quartz
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Optically induced switching in a p‐channel double heterostructure optoelectronic switch

G. W. Taylor, R. S. Mand, J. G. Simmons, and A. Y. Cho

Appl. Phys. Lett. 49, 1406 (1986); http://dx.doi.org/10.1063/1.97336 (3 pages) | Cited 20 times

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The switching time of a double heterostructure optoelectronic switch is investigated using an optical input. A switch‐on time of 5–10 ps is obtained using a discrete microwave package. The fall time of 10 ns is limited almost totally by the parasitic capacitance of the package. The switching operation shows the unique ability to turn on and off with the incident optical signal.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Pc Optical bistability, multistability, and switching, including local field effects
85.60.-q Optoelectronic devices
85.30.Tv Field effect devices

Nonperiodic power coupling in highly birefringent nonlinear optical fibers

A. Vatarescu

Appl. Phys. Lett. 49, 1409 (1986); http://dx.doi.org/10.1063/1.97337 (3 pages) | Cited 3 times

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Nonperiodic codirectional power coupling between the polarization eigenmodes of a highly birefringent fiber, possessing propagation constants βx and βy, is possible with the assistance of contradirectionally propagating modes. When the fiber length L is adjusted so that (βx−βy)L=2mπ(m=±1, ±2,...) and the fiber ends are unequally excited, the coupling term gives rise only to a nonreciprocal phase between counterpropagating waves.
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42.81.Qb Fiber waveguides, couplers, and arrays
42.81.Dp Propagation, scattering, and losses; solitons
42.81.Gs Birefringence, polarization

Experimental demonstration of longitudinal wiggler free‐electron laser

I. Shraga, Y. Goren, C. Leibovitch, S. Eckhouse, and A. Gover

Appl. Phys. Lett. 49, 1412 (1986); http://dx.doi.org/10.1063/1.97338 (3 pages) | Cited 1 time

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The lowbitron—a longitudinal wiggler beam interaction device—as a novel source of submillimeter wave radiation was proposed and analyzed theoretically by McMullin and Bekefi [Phys. Rev. A 25, 1826 (1982)]. This letter reports the first experimental measurements of lowbitron radiation obtained with a 740‐kV, 400‐A electron beam. The measured power spectra in the W‐band range for different wiggler field periods agree with the lowbitron interaction theory. They match the intersection points of the shifted fast cyclotron wave dispersion relation ω−(k+kw)v∥−Ω0/γ=0 and the TE01 electromagnetic waveguide mode.
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41.60.Cr Free-electron lasers
52.59.Px Hard X-ray sources
41.60.-m Radiation by moving charges
41.75.Ht Relativistic electron and positron beams

Low threshold 1.51 μm InGaAsP buried crescent injection lasers with semi‐insulating current confinement layer

W. H. Cheng, C. B. Su, K. D. Buehring, C. P. Chien, J. W. Ure, D. Perrachione, D. Renner, K. L. Hess, and S. W. Zehr

Appl. Phys. Lett. 49, 1415 (1986); http://dx.doi.org/10.1063/1.97339 (3 pages) | Cited 6 times

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A hybrid growth technique has been used to fabricate low threshold 1.51 μm InGaAsP buried crescent injection lasers with a semi‐insulating current confinement layer. The technique involves a first stage of low pressure metalorganic chemical vapor deposition followed by a liquid phase epitaxy stage. The lasers exhibit cw threshold currents as low as 12 mA at 25 °C, high yield, differential quantum efficiency over 41%, and output power more than 18 mW. Small‐signal modulation response to 3.5 GHz has been obtained. The lasers show an initial small degradation rate of 1%/kh at 50 °C which gives an estimated operating lifetime of 47 years at 25 °C.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

High‐power quasi‐cw monolithic laser diode linear arrays

G. L. Harnagel, P. S. Cross, D. R. Scifres, D. F. Welch, C. R. Lennon, D. P. Worland, and R. D. Burnham

Appl. Phys. Lett. 49, 1418 (1986); http://dx.doi.org/10.1063/1.97340 (2 pages) | Cited 7 times

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Optical power in excess of 25 W from one facet has been obtained from a 1‐cm monolithic AlGaAs laser array for a pulse width of 150 μs (quasi‐cw operation). The array consists of twenty 40‐stripe lasers spaced along the bar, with etched grooves between each region to prevent transverse lasing and amplified spontaneous emission. About 80% of the facet width is utilized for active laser emission.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.By Design of specific laser systems

Ultrasonic imaging of layered structures utilizing nondestructive subnanosecond photoacoustic pulse generation

A. C. Tam and G. Ayers

Appl. Phys. Lett. 49, 1420 (1986); http://dx.doi.org/10.1063/1.97341 (3 pages) | Cited 3 times

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We describe a photoacoustic ultrasonic imaging system that can provide separate acoustic information on a thick substrate and a thin coating simultaneously. This is achieved by generating an ultranarrow longitudinal pulse on the opaque layered sample, and detecting the series of substrate and coating echoes in high time resolution. The echo times, attenuations, and acoustic dispersions in each series provide information on the substrate or coating separately. New photoacoustic images of coatings and of substrates for coated ceramic substrates are presented.
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43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.35.Ns Acoustical properties of thin films

Influence of oxygen implantation conditions on the properties of a high‐temperature‐annealed silicon‐on‐insulator material

A. Golanski, A. Perio, J. J. Grob, R. Stuck, S. Maillet, and E. Clavelier

Appl. Phys. Lett. 49, 1423 (1986); http://dx.doi.org/10.1063/1.97342 (3 pages) | Cited 8 times

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A silicon‐on‐insulator (SOI) structure was formed by implanting 150 keV O+ ions into a single‐crystal, n‐type Si. The substrate temperature during implantation, Ti, was regulated within the range of 450–750 °C. Implanted samples were subsequently annealed at 1300 °C for 2–5 h and analyzed using transmission electron microscopy, Rutherford backscattering, the spreading resistance probe, and secondary ion mass spectroscopy. It is shown that the substrate temperature during oxygen implantation strongly influences the properties of the SOI structure after the high‐temperature annealing: the residual oxygen concentration within the Si surface layer strongly depends on Ti and correlates with the carrier density, indicating the presence of oxygen‐related thermal donors.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Adhesion measurement of thin films by indentation

M. J. Matthewson

Appl. Phys. Lett. 49, 1426 (1986); http://dx.doi.org/10.1063/1.97343 (3 pages) | Cited 24 times

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An indentation technique is described for measuring the shear strength of the interface between a thin film and a rigid substrate. A simple elastic/plastic analysis is used to describe the experimental results and good agreement between the two is found. The method may also be used to estimate the interfacial toughness so that the important parameters characterizing both initiation and propagation of adhesive failure may be determined from one simple experiment. The analysis is extended to describe the effect of residual stress in the film. Also, the stresses around a pinhole defect in a stressed film are examined.
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46.80.+j Measurement methods and techniques in continuum mechanics of solids
62.20.Qp Friction, tribology, and hardness
68.35.Gy Mechanical properties; surface strains
68.60.Bs Mechanical and acoustical properties

Annealing kinetics during rapid and classical thermal processing of a laser induced defect in n‐type silicon

W. O. Adekoya, J. C. Muller, and P. Siffert

Appl. Phys. Lett. 49, 1429 (1986); http://dx.doi.org/10.1063/1.97344 (3 pages) | Cited 8 times

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The annealing kinetics of the dominant defect [E(0.32 eV), σn=8×10−16 cm−2] induced in virgin Czochralski‐grown n‐type 〈100〉 1–5 Ω cm silicon by Nd‐YAG laser (1.6 J cm−2, 0.53 μm) irradiation has been studied within the temperature range 500–650 °C using rapid and conventional thermal processing. With deep level transient spectroscopy measurements, we have observed an annealing rate increase about 30 times faster in the rapid thermal annealed (RTA) samples, than in those heat treated in a conventional furnace (CTA) with an activation energy difference ΔEA≂0.31 eV between the two processes, the latter requiring the higher energy. This difference results from ionization‐enhanced annealing of this defect during RTA processing, a phenomenon which is markedly reduced in CTA‐processed samples.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Limitations to the open circuit voltage of amorphous silicon solar cells

M. Hack and M. Shur

Appl. Phys. Lett. 49, 1432 (1986); http://dx.doi.org/10.1063/1.97345 (3 pages) | Cited 5 times

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In this paper, we investigate the open circuit voltage of amorphous silicon alloy p‐i‐n and n‐i‐p solar cells and show that the low open circuit voltage of some devices can be caused by a built‐in potential smaller than normal arising from a low band‐gap p+ layer. For these solar cells, in good agreement with experimental data, the introduction of a boron profile in 200–500 Å of the intrinsic region near the p+‐i interface can enhance the open circuit voltage by about 150–200 mV to a value close to the bulk recombination limit.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ng Disordered solids

Thermal donor formation in electron‐irradiated Czochralski silicon

Johan Svensson, Bengt G. Svensson, and J. Lennart Lindström

Appl. Phys. Lett. 49, 1435 (1986); http://dx.doi.org/10.1063/1.97346 (3 pages) | Cited 9 times

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Isothermal heat treatment of Czochralski silicon samples has been performed at 450 °C. Prior to this treatment some samples were irradiated by high‐energy electrons (2.0 MeV) and subsequently annealed at 311 °C. As a result, a high concentration of vacancy‐dioxygen pairs was obtained. By a comparison of the thermal donor formation kinetics observed in the pretreated samples with that in as‐grown samples, the vacancy‐dioxygen pair can be ruled out as a ‘‘core’’ for thermal donors. A vacancy‐trioxygen pair, which occurs as a result of the annealing of the vacancy‐dioxygen pair, is also discussed.
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61.80.Fe Electron and positron radiation effects
61.72.jd Vacancies
61.72.jj Interstitials
81.40.Gh Other heat and thermomechanical treatments
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Direct electron spin resonance determination of dangling bond energies in rf sputtered hydrogenated amorphous silicon

D. Jousse

Appl. Phys. Lett. 49, 1438 (1986); http://dx.doi.org/10.1063/1.97347 (3 pages) | Cited 5 times

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The energy positions within the gap of the dangling bond levels are deduced from the variations in intensity of the equilibrium electron spin resonance signal as a function of Fermi level positions in undoped and doped rf sputtered hydrogenated amorphous silicon (a‐Si:H). The measurements of optically induced spin signals are used to detect any changes in the dangling bond concentration induced by doping. The results place the singly occupied level at 0.05 eV below the middle of the gap, i.e., at 0.95 eV below the conduction band, in agreement with one of the two values proposed for glow discharge a‐Si:H and give an effective correlation energy of +0.3 eV.
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78.40.Fy Semiconductors
76.30.Mi Color centers and other defects
71.20.-b Electron density of states and band structure of crystalline solids
71.23.-k Electronic structure of disordered solids

GaAs pn junction studied by scanning tunneling potentiometry

P. Muralt

Appl. Phys. Lett. 49, 1441 (1986); http://dx.doi.org/10.1063/1.97348 (3 pages) | Cited 18 times

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The potential distribution across the cleaved end face of a forward‐biased GaAs pn junction was simultaneously mapped with its surface topography. The space‐charge region along the interface is clearly visible at zero bias or small forward bias voltages.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling

Photoluminescence studies of ultrahigh‐purity epitaxial silicon

M. L. W. Thewalt, A. G. Steele, and J. E. Huffman

Appl. Phys. Lett. 49, 1444 (1986); http://dx.doi.org/10.1063/1.97297 (3 pages) | Cited 7 times

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Photoluminescence has been used to identify bulk and interfacial contaminants in ultrahigh‐purity epitaxially grown silicon. When combined with depth profiling using spreading resistance analysis, it provides a powerful characterization technique which may be used for determining optimal layer growth parameters. Identification of impurities has been demonstrated at concentrations which are orders of magnitude below the sensitivity limit of other methods suitable for epitaxial layer characterization.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities
78.40.Fy Semiconductors

Laser induced disordering of GaAs‐AlGaAs superlattice and incorporation of Si impurity

J. E. Epler, R. D. Burnham, R. L. Thornton, T. L. Paoli, and M. C. Bashaw

Appl. Phys. Lett. 49, 1447 (1986); http://dx.doi.org/10.1063/1.97298 (3 pages) | Cited 36 times

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A scanned Ar+ laser beam is demonstrated to be an effective way to selectively disorder very localized regions of an AlGaAs‐GaAs superlattice. As the focused laser beam scans across the sample, the superlattice rapidly melts and then regrows. Scanning electron microscope images of the scan cross section show a micron‐sized region of nearly homogeneous composition with a sharp (<400 Å) transition to as‐grown superlattice material. In addition, dopants such as Si deposited on the surface in an encapsulation layer are incorporated into the melt in high concentrations during the scanning process. In this way, the recrystallized material can serve as a patterned source for impurity induced disordering during a standard thermal anneal. The depth and width of the disordered region are given as a function of laser power measured before and after the thermal anneal (850 °C, 6 h).
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder

Variational calculations of subbands in a quantum well with uniform electric field: Gram–Schmidt orthogonalization approach

Doyeol Ahn and S. L. Chuang

Appl. Phys. Lett. 49, 1450 (1986); http://dx.doi.org/10.1063/1.97299 (3 pages) | Cited 24 times

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We present variational calculations of subband eigenstates in an infinite quantum well with an applied electric field using Gram–Schmidt orthogonalized trial wave functions. The results agree very well with the exact numerical solutions even up to 1200 kV/cm. We also show that for increasing electric fields the energy of the ground state decreases, while that of higher subband states increases slightly up to 1000 kV/cm and then decreases for a well size of 100 Å.
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71.10.-w Theories and models of many-electron systems
03.65.Ge Solutions of wave equations: bound states
71.23.An Theories and models; localized states
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Probe pressure effect on tunneling current through a GaAs‐(Al,Ga)As‐GaAs heterojunction barrier

P. M. Solomon, S. L. Wright, and D. La Tulipe

Appl. Phys. Lett. 49, 1453 (1986); http://dx.doi.org/10.1063/1.97300 (3 pages) | Cited 5 times

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We have observed a remarkable increase of current through GaAs/(Al,Ga)As/GaAs barrier structures on the application of probe pressure. The increase in current is by many orders of magnitude, and is reversible on removal of the pressure. A rough calculation based on the probe geometry gives a local pressure of tens of kbar over an area of several square micrometers. The phenomenon may be understood in terms of the pressure dependence of the band edges of GaAs and AlGaAs.
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73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Temperature and intensity dependence of photorefractive effect in GaAs

Li‐Jen Cheng and Afshin Partovi

Appl. Phys. Lett. 49, 1456 (1986); http://dx.doi.org/10.1063/1.97301 (3 pages) | Cited 26 times

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The photorefractive effect in semi‐insulating Cr‐doped GaAs as measured by the beam coupling technique was investigated as functions of temperature (295–386 K) and intensity (0.15–98 mW/cm2 of 1.15 μm light beams from a He‐Ne laser). Results show that the photorefractive effect deteriorates rapidly over a narrow range of temperature as temperature rises and that this characteristic temperature increases with the logarithm of beam intensity. The observed phenomenon is attributed to the competing effects of the dark‐ and light‐induced conductivities.
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78.20.Jq Electro-optical effects
72.40.+w Photoconduction and photovoltaic effects
42.65.-k Nonlinear optics
72.80.Ey III-V and II-VI semiconductors

Spatial resolution and nature of defects produced by low‐energy proton irradiation of GaAs solar cells

R. Kachare and B. E. Anspaugh

Appl. Phys. Lett. 49, 1459 (1986); http://dx.doi.org/10.1063/1.97302 (3 pages) | Cited 3 times

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AlGaAs/GaAs solar cells with ∼0.5‐μm‐thick Al0.85Ga0.15As window layers were irradiated using isotropic and normal incidence protons having energies between 50 and 500 keV with fluences up to 1×1012 protons/cm2. Although the projected range for these protons varies from 0 to more than 4.5 μm, the recombination losses due to the irradiation‐induced defects were observed to be maximum in the vicinity of the AlGaAs/GaAs interface and the space‐charge region irrespective of the proton energy. This was found by analyzing spectral response measurements. The results are explained by using a model in which the interaction of as‐grown dislocations with irradiation‐induced point defects is considered.
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84.60.Jt Photoelectric conversion
61.80.Jh Ion radiation effects
72.40.+w Photoconduction and photovoltaic effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Growth of In0.53Ga0.47As by liquid phase epitaxy over tungsten on structured InP substrates

J. E. Hancox, P. A. Houston, G. Hill, and N. Chand

Appl. Phys. Lett. 49, 1462 (1986); http://dx.doi.org/10.1063/1.97303 (3 pages) | Cited 1 time

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A first study involving lateral growth of In0.53Ga0.47As by liquid phase epitaxy over tungsten metal is being reported. Because of the rapid lateral nucleation process in the channels etched on (111) B InP substrates, seeding of the crystal through the metal layer is found unnecessary, enabling growth to occur over relatively large areas of continuous metal. The tungsten metal during growth was found to remain undissolved in the growth solution, and also acted as a mask for vertical growth when used on a plane InP substrate. The Schottky barrier characteristics between the tungsten and the top InGaAs layer indicate that this structure will be useful for metal base transistors.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
73.30.+y Surface double layers, Schottky barriers, and work functions
81.10.Fq Growth from melts; zone melting and refining
73.40.Vz Semiconductor-metal-semiconductor structures

Temperature‐dependent optical spectra of single quantum wells fabricated using interrupted molecular beam epitaxial growth

Emil S. Koteles, B. S. Elman, C. Jagannath, and Y. J. Chen

Appl. Phys. Lett. 49, 1465 (1986); http://dx.doi.org/10.1063/1.97304 (3 pages) | Cited 19 times

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Photoluminescence excitation (PLE) and temperature‐dependent photoluminescence (PL) spectroscopies have been employed to interpret fine structure observed in the low‐temperature PL spectra of GaAs/AlGaAs single quantum wells grown by molecular beam epitaxy under conditions of interrupted growth. Multiple peaks observed in the low‐temperature PL spectra of similar samples grown by others have been held to be proof of monolayer steps in exceptionally smooth interfaces. We show that similar structure in the low‐temperature PL spectra of our samples is not intrinsic. However, PLE or higher temperature PL spectroscopy yields unambiguous evidence for the model of interface smoothing due to growth interruption.
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78.40.Fy Semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
71.35.-y Excitons and related phenomena

Transient enhanced diffusion of dopants in silicon induced by implantation damage

R. Angelucci, P. Negrini, and S. Solmi

Appl. Phys. Lett. 49, 1468 (1986); http://dx.doi.org/10.1063/1.97305 (3 pages) | Cited 37 times

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The effects of implantation damage on B, P, As, and Sb diffusion in Si during rapid thermal annealing and conventional heat treatment at low temperature (750–900 °C) have been investigated. Comparison of dopant profiles and junction depths in damaged and undamaged regions demonstrates that a Si+ implantation in the typical conditions used for preamorphization in p+/n shallow junction fabrication, produces a markedly enhanced diffusion for B and P atoms, while inducing only a negligible increase of As and Sb diffusivity. For all dopants enhanced diffusion shows a transient behavior and produces an increase in junction depth which is higher the lower the annealing temperature. This corroborates the opinion that rapid thermal annealing is a suitable technique for shallow junction fabrication.
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66.30.J- Diffusion of impurities
61.80.Jh Ion radiation effects
85.40.Bh Computer-aided design of microcircuits; layout and modeling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Long term storage of inversion holes at a superlattice/GaAs interface

M. R. Melloch, Q‐D. Qian, and J. A. Cooper

Appl. Phys. Lett. 49, 1471 (1986); http://dx.doi.org/10.1063/1.97306 (2 pages) | Cited 6 times

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We report an investigation of the long term retention characteristic of a hole inversion layer at the interface between an AlAs/GaAs superlattice and GaAs in the dark. The retention time constant at 77 K is measured to be 34 h. From the temperature dependence of the retention time constant, an effective valence‐band discontinuity of 0.17 eV is obtained.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
79.40.+z Thermionic emission

Photoluminescence in CdTe grown on GaAs substrates by molecular beam epitaxy

D. J. Leopold, J. M. Ballingall, and M. L. Wroge

Appl. Phys. Lett. 49, 1473 (1986); http://dx.doi.org/10.1063/1.97624 (2 pages) | Cited 18 times

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Single‐crystal epitaxial layers of (100) and (111) oriented CdTe were grown on (100) oriented GaAs substrates by molecular beam epitaxy. Low‐temperature (4.2 K) photoluminescence spectra exhibit free‐exciton and bound‐exciton peaks having linewidths on the order of 2 meV for both CdTe crystallographic orientations. However, defect‐related photoluminescence is found to be stronger in (100) oriented CdTe.
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78.40.Fy Semiconductors
75.20.Ck Nonmetals
78.30.-j Infrared and Raman spectra
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