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24 Nov 1986

Volume 49, Issue 21, pp. 1403-1486

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Effect of size and material of liquid spherical particles on laser‐induced breakdown

Petr Chýlek, M. A. Jarzembski, N. Y. Chou, and R. G. Pinnick

Appl. Phys. Lett. 49, 1475 (1986); http://dx.doi.org/10.1063/1.97307 (3 pages) | Cited 20 times

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We have used the Nd:YAG laser output at λ=0.532 μm to investigate the effect of the size and the material of liquid spherical aerosols on the breakdown threshold. The breakdown threshold intensity decreases with increasing droplet size; however, no simple general dependence on the refractive index has been found.
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42.68.Ge Effects of clouds and water; ice crystal phenomena
42.68.Kh Effects of air pollution
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
92.60.Mt Particles and aerosols

Laser‐induced fluorescence studies of excimer laser ablation of Al2O3

R. W. Dreyfus, Roger Kelly, and R. E. Walkup

Appl. Phys. Lett. 49, 1478 (1986); http://dx.doi.org/10.1063/1.97308 (3 pages) | Cited 97 times

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We have used laser‐induced fluorescence to measure the energy distributions of Al atoms and AlO molecules produced by excimer laser ablation of Al2O3. Excimer laser fluences close to the threshold for ablation were used to minimize the effects of gas phase collisions. The kinetic energies of both species were high, ∼4 eV for Al and ∼1 eV for AlO, but the AlO rotational and vibrational energies were quite low, corresponding to a temperature of ∼600 K. These results rule out thermal vaporization and provide indirect support for an electronic ablation mechanism.
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79.20.Ds Laser-beam impact phenomena

Base transport dynamics in a heterojunction bipolar transistor

J. R. Hayes, A. F. J. Levi, A. C. Gossard, and J. H. English

Appl. Phys. Lett. 49, 1481 (1986); http://dx.doi.org/10.1063/1.97309 (3 pages) | Cited 13 times

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We have used hot‐electron spectroscopy to study nonequilibrium electron transport in the base of a heterojunction bipolar transistor. Electrons injected from an n‐type AlGaAs emitter into a p‐type GaAs base were found to be strongly scattered such that they could be characterized by an effective electron temperature after traversing several hundred angstroms. The effective electron temperature, measured at 4.2 K, was found to be 150 K for a sample having a 900‐Å base region and 500 K for a sample having a 450‐Å base region.
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85.30.Pq Bipolar transistors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.-i Conductivity phenomena in semiconductors and insulators

Radiation‐induced space charge in polymer film capacitors

S. R. Kurtz and R. A. Anderson

Appl. Phys. Lett. 49, 1484 (1986); http://dx.doi.org/10.1063/1.97310 (3 pages) | Cited 1 time

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A space‐charge mapping technique was used to observe the formation of x‐ray‐induced space charge in poly(ethylene terephthalate) and polystyrene capacitor structures. Electronic transport processes, responsible for radiation‐induced conductivity in these insulators, produced trapped space charge adjacent to the electrodes. These results were consistent with the conclusions of earlier photoconductivity measurements and revealed injection processes that limit the buildup of space charge.
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77.22.Jp Dielectric breakdown and space-charge effects
73.40.Rw Metal-insulator-metal structures
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
84.32.Tt Capacitors
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