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1 Dec 1986

Volume 49, Issue 22, pp. 1493-1556


Optimization of the discharge characteristics of a laser device employing a plasma electrode

Kenshi Nakamura, Nobuo Yukawa, Takehiro Mochizuki, Shiro Horiguchi, and Toshizo Nakaya

Appl. Phys. Lett. 49, 1493 (1986); http://dx.doi.org/10.1063/1.97311 (3 pages) | Cited 7 times

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Discharge characteristics have been investigated of a laser device in which the surface‐discharge plasma from a dielectric surface is used as a preionizer and an electrode, the plasma electrode. It is demonstrated that a highly homogeneous discharge can be obtained by optimizing the delay time of the main volume discharge with respect to the surface discharge. The output energy from the device used as a N2 laser is also discussed.
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52.80.-s Electric discharges
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.75.-d Plasma devices

Phased‐array lasers with a uniform, stable supermode

W. Streifer, M. Osiński, D. R. Scifres, D. F. Welch, and P. S. Cross

Appl. Phys. Lett. 49, 1496 (1986); http://dx.doi.org/10.1063/1.97312 (3 pages) | Cited 6 times

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A phased‐array semiconductor laser with identical coupled waveguides is designed to favor a uniform, stable supermode. All but the two outermost waveguides are equally spaced with the placement of the first and Nth guides chosen so as to increase their coupling coefficient by √2. The lowest and highest order supermodes have a uniform near‐field intensity envelope and utilize the injected charges more efficiently. Whichever of these is favored at threshold should remain stable with increasing pumping or under modulation.
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42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Phase conjugate signal from Bi12SiO20 crystal at elevated temperatures

Jae Heung Jo and Sang Soo Lee

Appl. Phys. Lett. 49, 1499 (1986); http://dx.doi.org/10.1063/1.97313 (3 pages) | Cited 1 time

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In a degenerate four wave mixing system, the phase conjugate signal from a transmission grating recorded in a Bi12SiO20 crystal is measured at various temperatures and the results are compared with theory. The diffraction efficiency η has a maximum value at a temperature above room temperature. The dynamic range in η vs It improves with increasing temperature, where It is the total intensity of the laser beam incident on the crystal. The experimental results are interpreted in terms of the temperature dependence of the effective modulation depth of the transmission grating and the diffusion field in the crystal.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Vb Optical storage systems, optical disks
42.79.Dj Gratings

Instabilities in external cavity injection lasers due to resonant self‐pulsing

P. Phelan, J. O’Gorman, J. McInerney, and D. Heffernan

Appl. Phys. Lett. 49, 1502 (1986); http://dx.doi.org/10.1063/1.97314 (3 pages) | Cited 1 time

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Instabilities in self‐pulsing semiconductor diode lasers in a long external ring cavity are reported. The frequency of the self‐pulsations increases in discrete steps with the injection current and the light‐current characteristic displays kinks at these steps. The observed frequencies are multiples of the external cavity resonance and the laser output is unstable when biased at currents corresponding to these kinks. Similar observations have been made in various cavities and other laser diodes.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Direct measurement of dispersive nonlinearities in GaAs

Y. H. Lee, A. Chavez‐Pirson, B. K. Rhee, H. M. Gibbs, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 49, 1505 (1986); http://dx.doi.org/10.1063/1.97315 (3 pages) | Cited 9 times

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Nonlinear refractive index changes in 299 Å multiple quantum well GaAs were obtained directly by measuring Fabry–Perot transmission peak shifts. These changes crosscheck those obtained by Kramers–Kronig transformations of the nonlinear absorption under identical pumping conditions. High intensities saturate the exciton, so that nonlinear refractive index changes are dominated by nonresonant contributions. Thermal refractive index changes were also measured directly.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
75.20.Ck Nonmetals
71.35.-y Excitons and related phenomena

Contact structure formed in the Ni/Al/Si system due to rapid thermal melting

A. Katz and Y. Komem

Appl. Phys. Lett. 49, 1508 (1986); http://dx.doi.org/10.1063/1.97316 (3 pages) | Cited 6 times

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The interface reaction induced by means of rapid thermal melting (RTM) of the Ni(30 nm)/Al(10 nm)/Si system, using heat treatment times of a few seconds at temperatures around the aluminum melting point, has been investigated. The RTM occurred at the Al‐Si eutectic melting temperature (577 °C). As a result of this melting a polycrystalline intermediate layer, 60 nm thick, composed of NiSi and Ni2Si was formed adjacent to the Si substrate with a relative smooth interface while the Al was repelled to the outer region of the contact and two successive separate layers of polycrystalline Al3Ni and Ni(Al0.5Si0.5) were formed, both 10 nm thick. The results indicate that RTM can be used to obtain a unique interface reaction in a controlled manner.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.40.Gh Other heat and thermomechanical treatments
68.35.Fx Diffusion; interface formation
68.55.Nq Composition and phase identification

Work function reduction of a tungsten surface due to cesium ion bombardment

G. S. Tompa, W. E. Carr, and M. Seidl

Appl. Phys. Lett. 49, 1511 (1986); http://dx.doi.org/10.1063/1.97317 (3 pages) | Cited 6 times

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The reduction of the work function of a polycrystalline W surface due to Cs+ bombardment has been investigated in the incident energy range below 500 eV. Upon exposure of the surface to a Cs+ beam, the work function decreases until a steady state is reached with a total Cs+ dose of less than 1×1016 ions/cm2. A minimum steady state work function surface is produced at an incident energy of ≊40 eV and the steady state work function rapidly increases with bombarding energy. Coverages are significantly lower than that produced on Mo for the same bombarding energies. Auger electron spectroscopy is used to confirm surface coverages. The cesium surface concentration is determined by reflection, sputtering, and implantation.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
73.30.+y Surface double layers, Schottky barriers, and work functions
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.05.Bx Metals, semimetals, and alloys

Morphology of Au/GaAs interfaces

Z. Liliental‐Weber, J. Washburn, N. Newman, W. E. Spicer, and E. R. Weber

Appl. Phys. Lett. 49, 1514 (1986); http://dx.doi.org/10.1063/1.97318 (3 pages) | Cited 17 times

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The interface morphology of gold contacts on ultrahigh vacuum (UHV) cleaved, air‐exposed, and chemically prepared GaAs surfaces has been studied by electron microscopy. Diodes formed on atomically clean cleaved (110) GaAs surfaces, subsequently annealed at 405 °C, were found to have flat interfaces. In contrast, diodes formed on air‐exposed and chemically prepared GaAs surfaces, also subsequently annealed at 405 °C, were found to have rough and uneven interfaces with a large number of protrusions extending into the semiconductor. They have different orientation relationships with the GaAs substrate than the diodes prepared in situ in UHV. The results of this study show that, upon annealing, the interfacial chemistry and morphology depend strongly on the surface preparation of GaAs before gold deposition.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
81.65.-b Surface treatments

Reversibility of recombination‐induced defect reactions in amorphous Si:H

David Redfield

Appl. Phys. Lett. 49, 1517 (1986); http://dx.doi.org/10.1063/1.97319 (2 pages) | Cited 12 times

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Recombination‐induced defect reactions are reversible in principle; i.e., any recombination (or trapping) process that induces defect formation can also induce recovery of that defect. This reversibility principle applies to crystalline and amorphous semiconductors. Although the rates in the two directions are generally quite different, evidence is cited indicating that in hydrogenated amorphous silicon they may be comparable, and offer new explanations for several observations. Illustrative rate equations are presented along with a series of testable experimental predictions.
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78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Model for heteroepitaxial growth of CdTe on (100) oriented GaAs substrate

G. Cohen‐Solal, F. Bailly, and M. Barbé

Appl. Phys. Lett. 49, 1519 (1986); http://dx.doi.org/10.1063/1.97320 (3 pages) | Cited 47 times

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A model is described, based on chemical bonding and lattice matching considerations, to account for the heteroepitaxy of CdTe on (100) GaAs substrate. The two main features of the proposed model are that the initial growth of CdTe starts with the formation of stable clusters of chemically bond Te, and that two types of cluster configurations are obtained depending only on the atomic structure of the (100)GaAs surface: the first one, made up of tetrahedral unit cells is formed on an As‐deficient surface and leads to (111) orientation, whereas the second one, formed by twin‐tetrahedral structures developed on an As‐ or Ga‐stabilized surface gives rise to (100) orientation.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Planar, embedded InP/GaInAs p‐i‐n photodiode with very high‐speed response characteristics

S. Miura, H. Kuwatsuka, T. Mikawa, and O. Wada

Appl. Phys. Lett. 49, 1522 (1986); http://dx.doi.org/10.1063/1.97321 (3 pages) | Cited 3 times

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A surface‐illuminated InP/GaInAs p‐i‐n photodiode with a planar, embedded structure has been fabricated. By minimizing the stray capacitance and by using semi‐insulating substrates, the capacitance has been reduced to 0.08 pF for a diode with a diameter of 20 μm. It has been demonstrated that this photodiode has a very high‐speed response of greater than 10 GHz. The present structure is suitable not only as a discrete p‐i‐n photodiode but also for optoelectronic integration.
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85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.30.De Semiconductor-device characterization, design, and modeling

Defect formation in thermal SiO2 by high‐temperature annealing

K. Hofmann, G. W. Rubloff, and R. A. McCorkle

Appl. Phys. Lett. 49, 1525 (1986); http://dx.doi.org/10.1063/1.97322 (3 pages) | Cited 28 times

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The formation of voids (or holelike defects) in 500‐Å‐thick thermal oxide films on Si(100) due to thermal decomposition of SiO2 during vacuum annealing at high temperatures (>1050 °C) has been studied as a function of temperature and time. The defect size distribution is sharply peaked and the density of the defects is essentially independent of annealing time. These observations suggest strongly that the void formation process is initiated at defect sites which are already present after oxidation. The kinetics of oxide void growth suggest the presence of a nucleation stage of the reaction prior to void growth.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.65.-b Surface treatments
68.35.Dv Composition, segregation; defects and impurities

Room‐temperature negative differential resistance in strained‐layer GaAs‐AlGaAs‐InGaAs quantum well heterostructures

G. S. Lee, K. Y. Hsieh, and R. M. Kolbas

Appl. Phys. Lett. 49, 1528 (1986); http://dx.doi.org/10.1063/1.97271 (3 pages) | Cited 6 times

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We report the first room‐temperature experimental observation of negative differential resistance in a strained‐layer double barrier resonant tunneling structure. Room‐temperature negative differential resistance (peak‐to‐valley ratio=1.4) was observed in GaAs‐AlGaAs‐InxGa1−xAs‐AlGaAs‐GaAs structure for indium compositions as high as x=0.09. We show that the onset of negative differential resistance can be adjusted by varying only the indium composition while holding all the other design parameters constant.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Molecular beam epitaxial growth of high structural perfection CdTe on Si using a (Ca,Ba)F2 buffer layer

H. Zogg and S. Blunier

Appl. Phys. Lett. 49, 1531 (1986); http://dx.doi.org/10.1063/1.97272 (3 pages) | Cited 29 times

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Epitaxial CdTe has been grown onto Si(111) by molecular beam epitaxy (MBE) with the aid of a graded CaF2‐BaF2 buffer layer. The buffer of ∼2000 Å thickness was used to overcome the large lattice mismatch of 19%; it was deposited by MBE in a separate system. The ∼10‐μm‐thick CdTe films exhibited specular surfaces and showed strong photoluminescence. The width of the near‐band‐edge peak at 77 K was 12 meV, and (333) x‐ray lines were about 80 arc s wide. These values indicate a high structural quality, comparable to well‐known CdTe layers on alternate substrates like GaAs, InSb, or sapphire.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.40.Fy Semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Inversion layers on germanium with low‐temperature‐deposited aluminum‐phosphorus oxide dielectric films

R. P. H. Chang and A. T. Fiory

Appl. Phys. Lett. 49, 1534 (1986); http://dx.doi.org/10.1063/1.97273 (3 pages) | Cited 7 times

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Mixed aluminum‐phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200 °C) are found to yield low interface state densities near the band edges which are sufficient for observing both p‐ and n‐channel‐type inversion layers. As a glass‐promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO2 interfaces.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions

Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen

Appl. Phys. Lett. 49, 1537 (1986); http://dx.doi.org/10.1063/1.97274 (3 pages) | Cited 19 times

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The lateral photoeffect in a new type of amorphous superlattice film, consisting of 6 Å of Ti and 13 Å of Si grown on a Si substrate, is discussed. The photovoltage varies extremely linearly with light spot position and can thus be used in accurate position sensitive detectors.
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72.40.+w Photoconduction and photovoltaic effects
73.40.Sx Metal-semiconductor-metal structures
73.61.-r Electrical properties of specific thin films

Time‐of‐flight measurements of minority‐carrier transport in p‐silicon

D. D. Tang, F. F. Fang, M. Scheuermann, and T. C. Chen

Appl. Phys. Lett. 49, 1540 (1986); http://dx.doi.org/10.1063/1.97275 (2 pages) | Cited 16 times

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The electric field dependence of electron mobilities in p‐type silicon with doping density of 4.5×1016 cm−3 at room temperature was measured using a time‐of‐flight technique. It was found that the electron mobility at zero field is very close to that in n‐type silicon of equivalent doping density; however, it decreases rapidly with electric field in a range from 0 to 0.2 kV/cm and more gradually at higher fields. The effect is attributed to the electron‐hole scattering.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Ht High-field and nonlinear effects

Hot‐electron capture to DX centers in AlxGa1−xAs at low Al mole fractions (x<0.2)

T. N. Theis, B. D. Parker, P. M. Solomon, and S. L. Wright

Appl. Phys. Lett. 49, 1542 (1986); http://dx.doi.org/10.1063/1.97276 (3 pages) | Cited 36 times

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We report quantitative studies of hot‐electron trapping by DX centers in short channel GaAs/n‐AlxGa1−x As field‐effect transistors. A remarkable result is that persistent hot‐electron capture occurs even at very low values of the Al mole fraction, x≲0.2, where thermal capture is not observed. Thermal emission studies confirm that the trap state is associated with the DX center. Thus, for x≲0.2 the trap state is metastable, but can be persistently populated by heating the free electrons with an electric field. This and other features of the capture process support a large lattice relaxation model of the center.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.30.Tv Field effect devices

In situ contacts to GaAs based on InAs

S. L. Wright, R. F. Marks, S. Tiwari, T. N. Jackson, and H. Baratte

Appl. Phys. Lett. 49, 1545 (1986); http://dx.doi.org/10.1063/1.97277 (3 pages) | Cited 29 times

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We report preliminary electrical results on n+‐InAs/n‐GaAs contact structures grown by molecular beam epitaxy. The data indicate that the conduction‐band discontinuity is sufficiently small to allow the formation of an ohmic contact to n‐type GaAs for very heavily doped InAs layers. The structures require a short‐term anneal to obtain a low resistance contact. An InAs layer which is only 200 Å thick is sufficient to provide a specific contact resistance of 10−6 Ω cm2. The contacts appear to be thermally stable for short‐term anneals up to 900 °C.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Cg Contact resistance, contact potential

Avalanche photomultiplication in the far infrared

Fielding Brown, David R. Parker, James Heyman, and Nathan Newbury

Appl. Phys. Lett. 49, 1548 (1986); http://dx.doi.org/10.1063/1.97278 (3 pages) | Cited 1 time

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We identify a process of avalanche photomultiplication in n‐germanium initiated by pulsed far‐infrared radiation at λ=151 μm. The sample at 4 K is biased above breakdown so that electrons populate the conduction band and excited states of donors as well as the ground state. Primary photoexcitation between 1s(3) and 2p± states alters the dynamic equilibrium between impact ionization and recombination and leads to photomultiplication by a factor M>105. Signals as low as 10−11 W have been detected with system bandwidth 20 MHz and response time τ∼1 ns. The relationship between detector current response and incident power has the unusual form is∝P0.5.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Kk Junction diodes
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Theoretical study of the electronic properties of semimagnetic superlattices

G. Y. Wu, D. L. Smith, C. Mailhiot, and T. C. McGill

Appl. Phys. Lett. 49, 1551 (1986); http://dx.doi.org/10.1063/1.97279 (3 pages) | Cited 5 times

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We present the first theoretical study of the electronic properties of superlattices formed from semimagnetic semiconductors. We explicitly consider the Cd0.8Mn0.2Te/Cd0.7Mn0.3Te superlattice system. We show magnetic field splittings both including (zero spin temperature) and neglecting (high spin temperature) the exchange interaction. We find that the exchange interaction dominates the magnetic effects. We present calculations of the derivative of the superlattice band gap with magnetic field as a function of the superlattice layer thickness. We show calculations of the change in superlattice band gap with magnetic field for several magnetic fields as a function of temperature.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
75.30.Et Exchange and superexchange interactions
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Laser photochemical etching of molybdenum and tungsten thin films by surface halogenation

M. Rothschild, J. H. C. Sedlacek, and D. J. Ehrlich

Appl. Phys. Lett. 49, 1554 (1986); http://dx.doi.org/10.1063/1.97623 (3 pages) | Cited 9 times

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Laser direct‐write etching of the refractory metals Mo and W has been developed using reactions in Cl2 and NF3 vapors. Rates and high spatial resolution are simultaneously optimized using a two‐vapor halogenation/development sequence, based on surface modification. Local‐area laser chlorination of the metal surface is used to predispose areas to subsequent bulk etching.
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81.05.Bx Metals, semimetals, and alloys
79.20.Ds Laser-beam impact phenomena
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.55.-a Thin film structure and morphology
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