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8 Dec 1986

Volume 49, Issue 23, pp. 1563-1622


Narrow linewidth, single frequency semiconductor laser with a phase conjugate external cavity mirror

Kerry Vahala, Kazuo Kyuma, Amnon Yariv, Sze‐Keung Kwong, Mark Cronin‐Golomb, and Kam Y. Lau

Appl. Phys. Lett. 49, 1563 (1986); http://dx.doi.org/10.1063/1.97280 (3 pages) | Cited 26 times

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We measure the spectral characteristics of an external cavity semiconductor laser which uses a phase conjugate mirror for its external reflection. This device has significant advantages over the conventional external cavity system owing to the self‐aligning nature of the phase conjugate mirror. The fiber delay line self‐heterodyne technique is used to measure the fundamental linewidth for single mode operation of this device. It shows the linewidth to be at least as narrow as the instrumental resolution of 100 kHz.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Electrochromic hydrated nickel oxide coatings for energy efficient windows: Optical properties and coloration mechanism

J. S. E. M. Svensson and C. G. Granqvist

Appl. Phys. Lett. 49, 1566 (1986); http://dx.doi.org/10.1063/1.97281 (3 pages) | Cited 60 times

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Durable electrochromic coatings of hydrated nickel oxide were produced by reactive rf magnetron sputtering of Ni followed by treatment in KOH. Spectrophotometry was used to assess the achievable modulation of luminous and solar transmittance and to verify that the studied material is interesting for ‘‘smart window’’ applications. 15N nuclear reaction analysis suggested that coloration occurred upon hydrogen extraction.
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75.20.Ck Nonmetals
78.40.Ha Other nonmetallic inorganics
78.30.-j Infrared and Raman spectra

Electron density measurements of electron beam pumped XeCl laser mixtures

W. D. Kimura, Dean R. Guyer, S. E. Moody, J. F. Seamans, and D. H. Ford

Appl. Phys. Lett. 49, 1569 (1986); http://dx.doi.org/10.1063/1.97282 (3 pages) | Cited 18 times

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Time‐dependent electron density measurements of electron beam pumped XeCl laser mixtures (nonlasing) are performed using a CO2 (10.6 μm) quadrature interferometer. The electron beam pulse length is ≊500 ns (full width at half‐maximum) and delivers ≳10 A/cm2 at the foil. Electron densities are measured as a function of the halogen (HCl) and xenon concentration. For a 99.3% Ne/1.5% Xe/0.16% HCl mixture at 3000 Torr, the electron density peaks near the beginning of the pulse at ≊7×1014 cm−3, decreases to 3×1014 cm−3, then gradually increases to ≊6×1014 cm−3 at the end of the pulse. As the initial halogen concentration is reduced, the electron density increases, rising dramatically near the end of the pulse. This increase in the electron density later in the pulse is accompanied by a decrease of the XeCl∗ sidelight fluorescence.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

High power (2.1 W) 10‐stripe AlGaAs laser arrays with Si disordered facet windows

R. L. Thornton, D. F. Welch, R. D. Burnham, T. L. Paoli, and P. S. Cross

Appl. Phys. Lett. 49, 1572 (1986); http://dx.doi.org/10.1063/1.97283 (3 pages) | Cited 22 times

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Silicon impurity induced disordering has been used to fabricate lasers with reduced facet absorption (facet windows) exhibiting enhanced catastrophic facet damage levels over comparable nonwindow devices. Power levels of 1.2 W cw were obtained from uncoated output facet devices and 2.1 W cw were obtained for a device with a coated output facet. Evidence is presented that the window region formed by silicon diffusion is a low‐loss waveguide which confines the propagating wave, increasing the efficiency of the device.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.By Design of specific laser systems

Four‐channel AlGaAs/GaAs optoelectronic integrated transmitter array

M. Kuno, T. Sanada, H. Nobuhara, M. Makiuchi, T. Fujii, O. Wada, and T. Sakurai

Appl. Phys. Lett. 49, 1575 (1986); http://dx.doi.org/10.1063/1.97284 (3 pages) | Cited 5 times

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A monolithic four‐channel optical transmitter at 0.8 μm wavelength has been fabricated. This has been achieved by using AlGaAs/GaAs optoelectronic integrated circuit (OEIC) approach. The OEIC chip contains four transmitter channels and each channel is composed of a graded‐index waveguide separate‐confinement heterostructure single quantum well laser, a monitor photodiode, and a laser driver circuit. The characteristics have been shown to be very uniform over four channels and pulse modulation responses over 1 Gb/s have been achieved.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.60.Jb Light-emitting devices
42.82.-m Integrated optics
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Continuous wave and Q‐switched infrared erbium laser

S. A. Pollack, D. B. Chang, and N. L. Moise

Appl. Phys. Lett. 49, 1578 (1986); http://dx.doi.org/10.1063/1.97285 (3 pages) | Cited 20 times

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Upconversion pumping has been demonstrated both experimentally and theoretically to be important in the 2.8‐μm 4I11/2–4I13/2 lasing transition in a CaF2 (Er3+) system. A minimum pump threshold of only 2.8 J with a 1‐ms Xe lamp pulse has been achieved in CaF2 rods containing 5 mol % of Er3+ ions. A simple theory has been developed to show that upconversion pumping makes possible cw lasing between the 4I11/2 and 4I13/2 states even when the lifetime of the terminal 4I13/2 state is much longer than that of the upper 4I11/2 state. Semi‐cw lasing has been experimentally demonstrated by pumping with six ganged photographic flash bulbs fired in sequence, with each bulb having a duration of 15–20 ms. Lasing at 2.8 μm lasted for 80 ms, well beyond 10 and 20 ms lifetimes of the 4I11/2 and 4I13/2 states. The 2.8‐μm CaF2 (Er3+) laser has also been Q switched, using a 100‐nm thin graphite foil as a shutter.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.-f Lasers
42.55.Px Semiconductor lasers; laser diodes

Electroelastic effect in layer acoustic mode propagation along ZnO films on Si substrates

L. Palmieri, G. Socino, and E. Verona

Appl. Phys. Lett. 49, 1581 (1986); http://dx.doi.org/10.1063/1.97286 (3 pages) | Cited 5 times

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The influence of a bias electric field on the phase velocity of acoustic layer modes propagating along a ZnO overlay on a Si substrate is analyzed. Measurements of the fractional change in phase velocity as a function of the applied electric field were performed on both Rayleigh and Sezawa modes. The strength of the electroelastic effect has been experimentally determined for two samples obtained by different sputtering runs. An evident dependence of this parameter on the acoustic mode and on the quality of the sputtered film was observed. The maximum value of 15.8×10−6 μm/V was attained by the Sezawa wave in one of the specimens, while a weaker effect was observed in the other cases.
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43.35.Pt Surface waves in solids and liquids
43.35.Ns Acoustical properties of thin films
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
68.35.Gy Mechanical properties; surface strains

Focused ion beam induced deposition of gold

G. M. Shedd, H. Lezec, A. D. Dubner, and J. Melngailis

Appl. Phys. Lett. 49, 1584 (1986); http://dx.doi.org/10.1063/1.97287 (3 pages) | Cited 49 times

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A finely focused ion beam is scanned over a surface on which a local gas ambient of dimethyl gold hexafluoro acetylacetonate is created by a directed miniature nozzle. The incident ions induce the selective deposition of gold along the path traced by the beam. The 15‐keV Ga+ ion beam current is 100 pA and the beam diameter is 0.5 μm. Gold lines of 0.5 μm width and Gaussian profile are written. The film growth rate corresponds to five atoms deposited per incident ion. The focused ion beam deposited films contained 15% Ga, but less than 5% of other impurities, such as O or C. Deposition was also observed with broad ion beams of 750 eV Ar+ and 50 keV Si+. The resistivity of the films varied from 2×10−5 to 1.3×10−3 Ω cm.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.At Metal and metallic alloys
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Scanning thermal profiler

C. C. Williams and H. K. Wickramasinghe

Appl. Phys. Lett. 49, 1587 (1986); http://dx.doi.org/10.1063/1.97288 (3 pages) | Cited 142 times

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A new high‐resolution profilometer has been demonstrated based upon a noncontacting near‐field thermal probe. The thermal probe consists of a thermocouple sensor with dimensions approaching 100 nm. Profiling is achieved by scanning the heated sensor above but close to the surface of a solid. The conduction of heat between tip and sample via the air provides a means for maintaining the sample spacing constant during the lateral scan. The large difference in thermal properties between air and solids makes the profiling technique essentially independent of the material properties of the solid. Noncontact profiling of resist and metal films has shown a lateral resolution of 100 nm and a depth solution of 3 nm. The basic theory of the new probe is described and the results presented.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.20.Dt Thermometers
07.10.-h Mechanical instruments and equipment

X‐ray observation of twin faults in (1,1,1) CdTe epitaxial layers and in (1,1,1) Hg1−xXxTe/CdTe superlattices

R. D. Horning and J.‐L. Staudenmann

Appl. Phys. Lett. 49, 1590 (1986); http://dx.doi.org/10.1063/1.97289 (3 pages) | Cited 10 times

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This letter describes x‐ray precession photographs of (1,1,1) CdTe epitaxial layers on GaAs, CdTe, and Cd0.96Zn0.04Te substrates. The precession method is further applied to some (1,1,1) Hg1−xXxTe/CdTe superlattices where X=Cd or Mn. More than half of the samples used in this study were grown by molecular beam epitaxy, others by metalorganic chemical vapor deposition, and a few by liquid phase epitaxy. The results unambiguously show that the common (1,1,1) face centered cubic twin fault, or stacking disorder, seen in bulk growth methods also exhibits its effects with the mentioned layer deposition growth techniques, except when liquid phase epitaxy is used. It seems that the twinning is intrinsic to the (1,1,1) growth in face centered cubic systems. In addition, devices with twin domains may have lower electronic mobilities. It further means that more experimental work is needed to produce untwinned single‐crystal materials deposited by molecular beam techniques.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Composition dependence of Au/InxAl1−xAs Schottky barrier heights

C. L. Lin, P. Chu, A. L. Kellner, H. H. Wieder, and Edward A. Rezek

Appl. Phys. Lett. 49, 1593 (1986); http://dx.doi.org/10.1063/1.97290 (3 pages) | Cited 24 times

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The surface barrier heights ϕbn and room‐temperature band gaps Eg of Si‐doped InxAl1−xAs layers grown by molecular beam epitaxy on n‐type (100) oriented InP substrates have been determined as a function of composition with capacitance versus voltage, internal photoemission, photoluminescence, and double‐crystal x‐ray rocking curve measurements for 0.45<x<0.55. The results indicate that Eg and ϕbn are linear functions of x; they also suggest that ϕbn (0.78)=0 and, for x>0.78, n‐type surfaces might be accumulated and p‐type surfaces are likely to be inverted.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Excitation mechanism in thin‐film electroluminescent devices

Kenji Okamoto and Shoshin Miura

Appl. Phys. Lett. 49, 1596 (1986); http://dx.doi.org/10.1063/1.97291 (3 pages) | Cited 17 times

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Time‐resolved emission spectra of ZnS:TbF thin films in photoluminescence and electroluminescence were measured and compared within a relatively short delay. It was concluded that the excitation mechanism of the Tb center involves energy transfer from the ZnS host in which the Tb‐related center acts as an efficient energy source for the excitation of the 4f8 electronic system in the Tb3+ ions. In addition to the ZnS:TbF thin film, a similar excitation mechanism was found to exist in the ZnS:Mn thin film. It is proposed that the TbF complex center and Mn act as an isoelectronic center or deep electron trap in ZnS thin films.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
78.40.Fy Semiconductors

Stoichiometry dependence of electrical activation efficiency in Si implanted layers of undoped, semi‐insulating GaAs

Takashi Sato, Masato Nakajima, Tsuguo Fukuda, and Koichi Ishida

Appl. Phys. Lett. 49, 1599 (1986); http://dx.doi.org/10.1063/1.97292 (3 pages) | Cited 8 times

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Stoichiometry dependences of the electrical activation efficiency in Si implanted layers have been investigated for undoped, semi‐insulating (SI) liquid encapsulated Czochralski (LEC) GaAs grown from melts of different compositions. The absolute value of lattice parameter was used as a measure for deviation from stoichiometry in GaAs. Irrespective of the annealing procedures, the electrical activation efficiency tends to increase and saturate to a maximum value as the crystals become As‐rich, i.e., the lattice parameter increases from 0.565358 to 0.565364 nm. These results demonstrate that the precise control of stoichiometry greatly improves the reproducibility of LEC growth of undoped SI GaAs suitable for GaAs integrated circuits.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.50.Nw Crystal stoichiometry
61.72.-y Defects and impurities in crystals; microstructure
61.66.Fn Inorganic compounds

Low loss InGaAs/InP multiple quantum well waveguides

U. Koren, B. I. Miller, T. L. Koch, G. D. Boyd, R. J. Capik, and C. E. Soccolich

Appl. Phys. Lett. 49, 1602 (1986); http://dx.doi.org/10.1063/1.97293 (3 pages) | Cited 23 times

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Double heterostructure planar waveguides with an InGaAs/InP multiple quantum well (MQW) core and InP cladding layers were grown by atmospheric pressure metalorganic chemical vapor deposition. Ridge waveguides had a low propagation loss of 0.8 dB/cm for 1.52 μm input light. The indices of refraction for the guided TE and TM modes have been measured and the bulk dispersion curves of the MQW material for the 1.46–1.55 μm wavelength region were derived.
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42.79.Gn Optical waveguides and couplers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Photoassisted oxidation of amorphous SiOx

R. A. B. Devine and G. Auvert

Appl. Phys. Lett. 49, 1605 (1986); http://dx.doi.org/10.1063/1.97294 (3 pages) | Cited 2 times

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The oxidation in air of substoichiometric films of SiOx by scanned, cw laser irradiation at 500 nm has been studied as a function of incident power density up to a maximum of 5.3 MW/cm2. Results obtained on substrates having widely different thermal conductivities suggest that the oxidation is thermally stimulated. Observed Auger electron spectra and measured refractive indices in oxidized films are characteristic of amorphous SiO2.
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81.05.Kf Glasses (including metallic glasses)
81.65.-b Surface treatments
75.20.Ck Nonmetals
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen

Appl. Phys. Lett. 49, 1608 (1986); http://dx.doi.org/10.1063/1.97295 (3 pages) | Cited 14 times

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Experiments are reported on the lateral photoeffect in a novel type of amorphous superlattice consisting of 6 Å of Ti and 13 Å of Si grown on Si substrate. The spectral, temperature, bias voltage, and time dependences have been measured for this new position sensitive detector.
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72.40.+w Photoconduction and photovoltaic effects
73.40.Sx Metal-semiconductor-metal structures
73.40.Vz Semiconductor-metal-semiconductor structures

Effect of surface preparation on Ge overlayer growth on (HgCd)Te

G. D. Davis, W. A. Beck, M. K. Kelly, Y. W. Mo, and G. Margaritondo

Appl. Phys. Lett. 49, 1611 (1986); http://dx.doi.org/10.1063/1.97296 (3 pages) | Cited 3 times

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The interactions between thin Ge overlayers and both cleaved and ion‐sputtered Hg1−xCdxTe surfaces have been examined using synchrotron radiation. Ge forms an unreactive layer on cleaved substrates of x=0.21 and x=0.28 with only a small loss of Hg (∼20%) from the interface. In contrast, deposition of Ge onto sputtered substrates results in approximately two (x=0.21 material) or three (x=0.28 material) times the Hg loss relative to the clean surface. The difference in behavior of the sputtered and cleaved material is due to sputter‐induced defects at the surface. The increased loss of Hg from the sputtered x=0.28 material is a result of a greater number of these defects caused by the weaker Hg–Te bonding and the corresponding increase in the preferential sputtering of Hg from the surface. No difference was observed between sputtered p‐type and n‐type material. These results are a consequence of GeTe and HgTe having very similar heats of formation; as such, deposition of Ge provides an indication of the reactivity of (HgCd)Te surfaces.
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81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.80.Cb X-ray effects

14.5% conversion efficiency GaAs solar cell fabricated on Si substrates

Yoshio Itoh, Takashi Nishioka, Akio Yamamoto, and Masafumi Yamaguchi

Appl. Phys. Lett. 49, 1614 (1986); http://dx.doi.org/10.1063/1.97245 (3 pages) | Cited 21 times

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AlGaAs‐GaAs heteroface p+‐p‐n solar cells have been fabricated directly on Si substrates using metalorganic chemical vapor deposition. GaAs on Si solar cell efficiency as high as exceeding 14.5% at AM1.5 was obtained by cleaning the substrate surface and repeating GaAs film growth interruption. This value is the highest ever reported for GaAs solar cells on Si substrates. Defects, which could not be observed in homoepitaxially grown GaAs film, were observed in the heteroepitaxial GaAs films through electron beam induced current image. Relatively low conversion efficiency of the GaAs cell on Si compared to the GaAs can be attributed to these defects.
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84.60.Jt Photoelectric conversion
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
72.40.+w Photoconduction and photovoltaic effects

New method to determine the carbon concentration in silicon

J. Weber and M. Singh

Appl. Phys. Lett. 49, 1617 (1986); http://dx.doi.org/10.1063/1.97246 (3 pages) | Cited 19 times

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Silicon samples subjected to a CF4 reactive ion etch exhibit the G‐line luminescence known from photoluminescence studies of irradiation damage in Si. We investigate the mechanism of low‐energy carbon implantation by CF4 plasma and find a linear dependence of the G‐line luminescence intensity on the substitutional carbon concentration in the samples. By a standardized etching and photoluminescence procedure, we expect to determine carbon concentrations two orders of magnitude smaller than the ASTM infrared absorption method.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
78.40.Fy Semiconductors
61.72.uf Ge and Si
81.65.-b Surface treatments

Electron spin resonance study of hydrogenation effects in polycrystalline silicon

Dominique Ballutaud, Marc Aucouturier, and Florence Babonneau

Appl. Phys. Lett. 49, 1620 (1986); http://dx.doi.org/10.1063/1.97247 (3 pages) | Cited 9 times

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Electron spin resonance spectra obtained on polycrystalline silicon produced by annealing of chemical vapor deposition silicon are investigated before and after plasma hydrogenation of the material. Before hydrogenation, two paramagnetic defects are observed, one of them remaining unidentified (g=2.0084). Hydrogenation decreases the total spin density, but the two defects are affected differently; the defect with g=2.0084 is more efficiently passivated. The results are discussed in terms of the inter‐ and intragranular nature of the paramagnetic defects and of hydrogen diffusivity in the polycrystal.
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81.65.-b Surface treatments
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
76.30.Mi Color centers and other defects
66.30.J- Diffusion of impurities
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