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15 Dec 1986

Volume 49, Issue 24, pp. 1629-1669


Widely separate wavelength switching of single quantum well laser diode by injection‐current control

Yasunori Tokuda, Noriaki Tsukada, Kenzo Fujiwara, Koichi Hamanaka, and Takashi Nakayama

Appl. Phys. Lett. 49, 1629 (1986); http://dx.doi.org/10.1063/1.97248 (3 pages) | Cited 19 times

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It is demonstrated for the first time that by injection‐current control, the lasing wavelength was able to be switched from the lowest (n=1) quantized state transition to the second (n=2) transition for a single quantum well laser diode. The separation in energy was as wide as >50 meV. This novel function of a laser was realized as a result of appropriately increased threshold gain. This diode, moreover, acted as a multiple wavelength‐emitting laser.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.45.+h Stimulated emission

High‐power (cw) in‐phase locked ‘‘Y’’ coupled laser arrays

D. F. Welch, P. S. Cross, D. R. Scifres, W. Streifer, and R. D. Burnham

Appl. Phys. Lett. 49, 1632 (1986); http://dx.doi.org/10.1063/1.97249 (3 pages) | Cited 13 times

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Buried heterostructure phased array lasers have been fabricated with ‘‘Y’’ coupling regions to produce in‐phase locking. The far‐field pattern corresponding to the in‐phase emission of ten waveguides is stable under wide variations of operating conditions. Power outputs of up to 200 mW cw and 400 mW pulsed are obtained from a ten‐element (50 μm aperture) array. By monitoring the far‐field pattern under impulse excitation, the phase locking is shown to evolve in less than 300 ps.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Fc Modulation, tuning, and mode locking

Long conduction time plasma erosion opening switch experiment

D. D. Hinshelwood, J. R. Boller, R. J. Commisso, G. Cooperstein, R. A. Meger, J. M. Neri, P. F. Ottinger, and B. V. Weber

Appl. Phys. Lett. 49, 1635 (1986); http://dx.doi.org/10.1063/1.97250 (3 pages) | Cited 19 times

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A plasma erosion opening switch, coupled to a small capacitor bank, conducts 120 kA for 400 ns before opening in 40 ns. Voltages above 170 kV are produced through the use of an electron beam diode. These voltages exceed the initial capacitor bank voltage by a factor of 4. Current and magnetic field measurements indicate that the same current conduction and opening processes observed in earlier erosion switch experiments are involved here at tenfold greater conduction times, verifying the current controlled nature of plasma erosion switch operation.
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52.75.Kq Plasma switches (e.g., spark gaps)
52.80.Vp Discharge in vacuum
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Fluorescence probes for study of insulator damage

E. Roland Menzel, Lynn L. Hatfield, and Vijendra K. Agarwal

Appl. Phys. Lett. 49, 1638 (1986); http://dx.doi.org/10.1063/1.97251 (3 pages)

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We present an innovative approach to the study of electrical damage in insulators, involving laser excited fluorescence probes. Specimens first subjected to surface flashover in vacuum were stained with highly fluorescent dyes, chosen to have varied chemical properties, and examined under laser excitation. Surface flashover tracks, locations of corona discharge, and other features were readily revealed, even when no damage was visible to the naked eye. Our results indicate that chemical changes, charge distributions, and structural features arising from electrical, mechanical, and thermal stresses can be probed.
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77.22.Jp Dielectric breakdown and space-charge effects
78.55.-m Photoluminescence, properties and materials
52.80.-s Electric discharges
81.40.Rs Electrical and magnetic properties related to treatment conditions

Detection of phonons with a scanning tunneling microscope

Douglas P. E. Smith, Gerd Binnig, and Calvin F. Quate

Appl. Phys. Lett. 49, 1641 (1986); http://dx.doi.org/10.1063/1.97252 (3 pages) | Cited 12 times

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A well defined spectrum of peaks in d2I/dV2 vs V has been obtained with a tunneling microscope immersed in liquid helium. The positions of the peaks correspond closely to the energies of the phonons of the graphite sample and the tungsten tip. We propose that electrons coupling to the bulk phonons near the tip to sample gap cause the observed increases in the tunneling conductance. Spectroscopic imaging at a phonon energy shows spatial variations of the vibrational spectra on an atomic scale.
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63.20.D- Phonon states and bands, normal modes, and phonon dispersion
63.20.K- Phonon interactions
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Crystal structure of sputter‐synthesized CoNx thin films

Morito Matsuoka and Ken’ichi Ono

Appl. Phys. Lett. 49, 1644 (1986); http://dx.doi.org/10.1063/1.97253 (3 pages) | Cited 3 times

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This letter discusses the synthesis of CoNx films using rf diode reactive sputtering. It describes the properties of crystal structures in CoNx thin films and in particular, the post‐annealing effects on the crystal structures of CoNx. The CoNx films have the crystal structures of ϵ‐Co(hcp), α‐Co(fcc), α′‐Co(fcc) as a superstructure of α‐Co, γ‐Co3N(hcp), and δ‐Co2N(orthorhombic). The crystal structures have topotaxial relationships with each other, and exist in a wider composition range than in bulk.
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68.55.-a Thin film structure and morphology
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.15.Cd Deposition by sputtering

High‐resolution photovoltaic position sensing with Ti/Si superlattices

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen

Appl. Phys. Lett. 49, 1647 (1986); http://dx.doi.org/10.1063/1.97254 (2 pages) | Cited 20 times

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A detector to sense the position of a beam of light with a resolution of less than 100 Å has been fabricated with a Ti/Si amorphous superlattice on p‐type Si. There are two regions of photovoltaic sensitivity, a low sensitivity region having a response of 1.6 mV/mm and a high sensitivity region having 1.5 mV/μm. This novel detector can sense the light spot position over large lateral dimensions, while the high central sensitivity region would permit servo driving to a null position with a high degree of precision. These characteristics also suggest the use of this device in a variety of other photonic transducers.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Sx Metal-semiconductor-metal structures
72.40.+w Photoconduction and photovoltaic effects

Low‐temperature magnetic spectroscopy with a dc SQUID

J. R. Rozen and D. D. Awschalom

Appl. Phys. Lett. 49, 1649 (1986); http://dx.doi.org/10.1063/1.97255 (3 pages) | Cited 9 times

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New magneto‐optical methods combining integrated dc superconducting quantum interference device and fiber optic technology have allowed energy‐ and polarization‐dependent magnetization measurements to be made on a 10‐μm‐diam sample of Cd1−xMnxTe. Direct optically induced magnetization data probe the energetics of magnetic polaron formation and reveal the ultimate spin orientation with respect to the incident photon angular momentum.
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78.20.Ls Magneto-optical effects
85.25.-j Superconducting devices
75.30.Cr Saturation moments and magnetic susceptibilities
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)

Observation of discrete resistance levels in large area graded gap diodes at low temperatures

T. Judd, N. R. Couch, P. H. Beton, M. J. Kelly, T. M. Kerr, and M. Pepper

Appl. Phys. Lett. 49, 1652 (1986); http://dx.doi.org/10.1063/1.97256 (2 pages) | Cited 12 times

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We have investigated the low‐temperature properties of a GaAs n‐i‐n diode where the intrinsic region consists of a linearly graded gap of AlGaAs, and is surrounded by lightly doped GaAs regions. The current‐voltage (I‐V) characteristics are strongly asymmetric and are dominated by the graded cap. Unstable I‐V characteristics are obtained in forward bias. Random switching is seen between resistance levels. This is ascribed to single electron events at traps near the abrupt heterojunction of the graded gap—the first such observation in a large area device.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Performance of quarter‐micron GaAs metal‐semiconductor field‐effect transistors on Si substrates

M. I. Aksun, H. Morkoç, L. F. Lester, K. H. G. Duh, P. M. Smith, P. C. Chao, M. Longerbone, and L. P. Erickson

Appl. Phys. Lett. 49, 1654 (1986); http://dx.doi.org/10.1063/1.97257 (2 pages) | Cited 22 times

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Metal‐semiconductor field‐effect transistors (MESFET’s) having quarter‐micron gate lengths were fabricated in GaAs films grown directly on 〈100〉 silicon tilted towards 〈110〉 by 4°. Following the growth of 2 μm undoped GaAs buffer layer a 3 μm GaAs doped with Si to a level of 3×1017 cm−3 was grown all by molecular beam epitaxy. Devices showed good dc characteristics with extrinsic transconductances as high as 360 mS/mm. Extrapolation of the short‐circuit current gain calculated from scattering parameters measured up to 20 GHz indicated a current gain cut‐off frequency of 55 GHz, which is comparable to the best MESFET on GaAs substrates. The noise figure measured at 18 GHz was 2.8 dB, which is about 1.4 dB higher than that on GaAs substrates.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.De Semiconductor-device characterization, design, and modeling

Si‐TaSi2 in situ junction eutectic composite diodes

Brian M. Ditchek and Mark Levinson

Appl. Phys. Lett. 49, 1656 (1986); http://dx.doi.org/10.1063/1.97622 (3 pages) | Cited 15 times

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Nearly ideal diodes have been fabricated using the in situ junctions present in Si‐TaSi2 semiconductor‐metal eutectic composites. The composites, prepared by directional solidification at the eutectic composition, have a high density of TaSi2 rods in a quasi‐single crystalline P‐doped, n‐type Si matrix. Analysis of the diodes using current‐voltage and capacitance‐voltage techniques yields a TaSi2/Si Schottky barrier height of 0.62 eV and evidence that the voltage‐dependent depletion zones can be made comparable to the interrod spacing to produce a ‘‘pinch‐off’’ condition.
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85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions
81.05.Ni Dispersion-, fiber-, and platelet-reinforced metal-based composites

Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition

D. Feketa, K. T. Chan, J. M. Ballantyne, and L. F. Eastman

Appl. Phys. Lett. 49, 1659 (1986); http://dx.doi.org/10.1063/1.97258 (2 pages) | Cited 68 times

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A graded‐index separate‐confinement strained‐layer quantum well laser with pseudomorphic Ga0.63In0.37As quantum well was grown by metalorganic chemical vapor deposition. The lasing wavelength is 0.99 μm at 300 K and the average threshold current density of broad area 146×363 μm devices is 195 A/cm2.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Decomposition of palladium acetate films with a microfocused ion beam

L. R. Harriott, K. D. Cummings, M. E. Gross, and W. L. Brown

Appl. Phys. Lett. 49, 1661 (1986); http://dx.doi.org/10.1063/1.97259 (2 pages) | Cited 15 times

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Submicron Pd features have been fabricated on Si and SiO2 substrates by microfocused Ga+ ion beam exposure of spin‐on palladium acetate, [Pd(O2CCH3)2]3, films. Electrical conductivity measurements were made on the exposed features as a function of ion dose for nominal linewidths of 1 and 10 μm. The sheet conductivity in the two cases is comparable and increases dramatically in the exposure dose range between 2×1014 and 5×1014 ions/cm2. The conductivity of the exposed lines is further increased after heating in a hydrogen furnace. Potential applications of this process include mask repair and integrated circuit modification.
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82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
73.61.At Metal and metallic alloys
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Low‐temperature ion beam enhanced etching of tungsten films with xenon difluoride

A. Bensaoula, A. Ignatiev, J. Strozier, and J. C. Wolfe

Appl. Phys. Lett. 49, 1663 (1986); http://dx.doi.org/10.1063/1.97260 (2 pages) | Cited 9 times

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The spontaneous and ion enhanced etching of sputter deposited tungsten films has been studied. The etch rates have been measured as a function of various etch parameters with striking differences found as a function of sample temperatures. The spontaneous etch rate is found to be totally suppressed at temperatures below 170 K, and concomitantly the ion enhanced etch rate is increased. With these two points in mind, it is shown that ion beam enhanced etching of W with XeF2 at moderately low temperatures could be used to greatly improve the ratio of the ion enhanced etch rate over the spontaneous etch rate. This unique condition could be used to achieve high aspect ratio structures with vertical walls and opens up the possibility of direct ion beam pattern definition.
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81.05.Bx Metals, semimetals, and alloys
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Molecular beam epitaxial growth of the II‐V semiconductor compound Zn3As2

B. Chelluri, T. Y. Chang, A. Ourmazd, A. H. Dayem, J. L. Zyskind, and A. Srivastava

Appl. Phys. Lett. 49, 1665 (1986); http://dx.doi.org/10.1063/1.97261 (3 pages) | Cited 11 times

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We report the first molecular beam epitaxial growth of the II‐V semiconducting compound Zn3As2. Commensurate growth of the tetragonal crystal was obtained in the temperature range 300–360 °C on InP. Growth on GaAs was incommensurate due to larger lattice mismatch. The unintentionally doped material is p type. At room temperature, p∼5×1018 cm−3, μ=43 cm2/V s, and the absorption edge is at 0.99 eV. Low‐temperature photoluminescence and Hall data suggest that the lowest acceptor level is very close in energy to the valence‐band maxima. Optical absorption data suggest that the band gap associated with these valence‐band maxima is indirect in nature. The direct band gap is slightly larger.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.40.Fy Semiconductors
75.20.Ck Nonmetals
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Inverse noncollinear Compton laser as a device for acceleration of electrons

V. V. Apollonov, Yu. L. Kalachev, A. M. Prokhorov, and M. V. Fedorov

Appl. Phys. Lett. 49, 1668 (1986); http://dx.doi.org/10.1063/1.97262 (2 pages)

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A new method of laser acceleration of electrons is proposed. The method is based on stimulated Compton scattering in a noncollinear geometry. The saturation length is found to be rather small. The scheme with a varying geometry is suggested to prevent the process from saturating and to achieve high energies of the accelerated electrons.
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41.75.Fr Electron and positron beams
41.60.-m Radiation by moving charges
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