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22 Dec 1986

Volume 49, Issue 25, pp. 1677-1746


Multiple wavelength optical recording using cyanine dye J aggregates in Langmuir–Blodgett films

C. Ishimoto, H. Tomimuro, and J. Seto

Appl. Phys. Lett. 49, 1677 (1986); http://dx.doi.org/10.1063/1.97263 (3 pages) | Cited 21 times

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An optical storage technique based on the characteristic absorption bands of J aggregates of organic dyes is reported. The information is written by disordering the regular structures of cyanine dye J aggregates with a laser beam. This technique gives high recording sensitivity, and the disordered dye molecules can be made to reform the J aggregate, which indicates that the recording process is reversible. The J aggregates of cyanine dyes were formed by incorporating them in Langmuir–Blodgett (LB) films. The advantages of the narrow absorption bands of J aggregates and of the controlled multilayer forming capability of LB films were combined to demonstrate multiple wavelength optical recording using two recording layers.
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42.79.Vb Optical storage systems, optical disks
79.20.Ds Laser-beam impact phenomena
75.20.Ck Nonmetals
42.70.Gi Light-sensitive materials

Time‐resolved studies of intense, relativistic electron beams with a subnanosecond Čerenkov electro‐optic shutter

F. Hartemann and G. Bekefi

Appl. Phys. Lett. 49, 1680 (1986); http://dx.doi.org/10.1063/1.97264 (3 pages) | Cited 6 times

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Time‐resolved studies of intense, relativistic electron beams using a novel subnanosecond Čerenkov electro‐optic shutter are described. The technique is applied to the measurements of the electron beam emittance from a multielectrode field emission gun (1.6 MV, 1 kA, 30 ns), and to the study of the stability of a rotating relativistic electron ring (200 kV, 100 A, 1 μs).
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41.75.Ht Relativistic electron and positron beams
52.27.Ny Relativistic plasmas
52.59.Px Hard X-ray sources

Photochemically pumped I2(D′3Π2g→A′3Π2u) emission in mixtures of I2+C3F7I and I2+O3: Implications for chemically initiated, broadband optically pumped I2(D′→A′) lasers

D. J. Stech, C. H. Muller, S. R. Czyzak, and D. K. Neumann

Appl. Phys. Lett. 49, 1683 (1986); http://dx.doi.org/10.1063/1.97265 (3 pages) | Cited 2 times

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We report the first observation of photochemically initiated I2(D′→A′) emission at 342 nm. Mixtures of I2 and C3F7I or I2 and O3 were excited by a KrF laser at 248 nm photodissociating the C3F7I or O3. The process believed responsible for the intense D′→A′ emission is rapid energy transfer from the excited I(2P1/2) or O2(a 1Δ) photodissociation products to I2(X,v″=0) producing I2(X,v″=25→43) which is optically pumped by 248 nm photons to I2(D 1∑+u) and I2(F 1∑+u). Rapid collisional redistribution results in the F,D→D′ crossover. Gain of several percent per centimeter on the D′→A′ transition may be possible with the appropriate gas mixture and pump source.
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33.80.Be Level crossing and optical pumping
34.50.Gb Electronic excitation and ionization of molecules
42.55.Ks Chemical lasers
78.60.Ps Chemiluminescence

Observation of enhanced single longitudinal mode operation in 1.5‐μm GaInAsP erbium‐doped semiconductor injection lasers

W. T. Tsang and R. A. Logan

Appl. Phys. Lett. 49, 1686 (1986); http://dx.doi.org/10.1063/1.97266 (3 pages) | Cited 48 times

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We propose a new type of current injection semiconductor laser with rare‐earth dopant in the active layer for achieving stable, single longitudinal mode operation. In this laser, the rare‐earth/semiconductor combination is chosen such that the wavelengths of the dominant emission from the trivalent rare‐earth ion internal 4f‐4f  transitions are shorter than that of the band‐edge emission of the host semiconductor. Spectrally, the narrow optical gain due to the rare‐earth ion transition will superimpose on top of the broad gain peak of the host semiconductor. Such laser diodes will attain lasing action at the rare‐earth transition wavelength resulting in single longitudinal mode operation with conventional Fabry–Perot cavity. Furthermore, reproducible precise lasing wavelength insensitive to temperature variation should be possible. Such a proposed rare‐earth/semiconductor injection laser was investigated with erbium doping in the GaInAsP (λ=1.55 μm) active layer of the heteroepitaxial ridge‐overgrown laser. Stable, single longitudinal mode operation at 15 322 Å was obtained. Furthermore, this lasing line shifted at a slow rate of ≲1 Å/°C with heat‐sink temperature. Initial results do appear to confirm this new proposed rare‐earth/semiconductor laser operation scheme.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.55.Rz Doped-insulator lasers and other solid state lasers

Second quantized state lasing of a current pumped single quantum well laser

Michael Mittelstein, Yasuhiko Arakawa, Anders Larsson, and Amnon Yariv

Appl. Phys. Lett. 49, 1689 (1986); http://dx.doi.org/10.1063/1.97267 (3 pages) | Cited 41 times

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Newly observed features of quantum well lasers are presented and explained with the aid of a simple model. These involve lasing with gain contributions not only from the fundamental (n=1) state, but simultaneously from the second quantized (n=2) state as well. Experimental data for current pumped GaAlAs/GaAs single quantum well lasers are presented. Very high resonator losses (≳100 cm−1) force the lasers to augment their gain with major contributions from the second quantized state. The main signature of n=2 lasing, a sudden and large increase in the lasing photon energy, is observed and explained by the theory.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission
42.55.Ah General laser theory

Experimental verification of the improved coupled‐mode equations

E. A. J. Marcatili, L. L. Buhl, and R. C. Alferness

Appl. Phys. Lett. 49, 1692 (1986); http://dx.doi.org/10.1063/1.97268 (2 pages) | Cited 11 times

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The responses of specially designed directional couplers built with Ti:LiNbO3 in‐diffused guides were measured and found to be substantially better predicted by an improved version of the coupled‐mode theory than by the traditional one.
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42.79.Gn Optical waveguides and couplers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Further evidence for two‐component surface acoustic wave reflections from surface breaking slots

R. J. Dewhurst, A. D. W. McKie, and S. B. Palmer

Appl. Phys. Lett. 49, 1694 (1986); http://dx.doi.org/10.1063/1.97269 (2 pages) | Cited 4 times

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When laser‐generated Rayleigh pulses interact with surface breaking slots in metals, two distinct reflections are present in the captured waveform. While the first component is accepted as arising from the direct reflection of a Rayleigh pulse from the top of the defect, the origin and features of the second component have been the subject of some discussion. This letter presents evidence to show that the second component also propagates at the Rayleigh velocity, lending support to the suggestion that it originates at the base of the slot and can be used to measure the slot depth.
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43.35.Pt Surface waves in solids and liquids
68.35.Gy Mechanical properties; surface strains
43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products

Laser‐controlled collective ion accelerator

P. G. O’Shea, W. W. Destler, J. Rodgers, and Z. Segalov

Appl. Phys. Lett. 49, 1696 (1986); http://dx.doi.org/10.1063/1.97270 (3 pages) | Cited 5 times

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We report first results from a new collective accelerator experiment in which a laser‐controlled channel of ionization is used to control the propagation of the potential well at the front of an intense relativistic electron beam injected at currents above the space‐charge limit. The controlled acceleration of protons at the rate of 40 MeV/m over a distance of 45 cm is reported, in good agreement with experimental design values.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
41.75.Ht Relativistic electron and positron beams
52.27.Ny Relativistic plasmas
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative

Electron spin resonance observations of paramagnetic defects produced in fused silica by high‐energy oxygen and krypton ions

Y. Langevin, E. Dooryhee, J. Borg, J‐P. Duraud, C. Lecomte, and E. Balanzat

Appl. Phys. Lett. 49, 1699 (1986); http://dx.doi.org/10.1063/1.97219 (3 pages) | Cited 3 times

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Pure fused low‐OH silica (Tetrasil SE) has been studied by electron spin resonance (ESR) after it had been irradiated by 50 MeV/amu oxygen and 43 MeV/amu krypton ions at the GANIL accelerator. Paramagnetic defects have been observed which are closely related to intrinsic defects formed by γ‐ray irradiation in amorphous SiO2, such as the E′ center and the peroxy radical. ESR signatures of defects formed by heavy ions exhibit, however, specific features in comparison with those formed by other types of irradiation (γ/x rays, electrons, or neutrons). The density of defects increases faster than the energy loss, so that the production of defects by heavy ion irradiation cannot be described by the total energy deposit alone. This is consistent with previous studies of latent ion tracks in insulating minerals using small angle x‐ray scattering and track etching techniques.
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61.80.Jh Ion radiation effects
76.30.Mi Color centers and other defects
61.80.Ed γ-ray effects
61.72.Bb Theories and models of crystal defects

ZnSe‐ZnS strained‐layer superlattice grown by low pressure metalorganic vapor phase epitaxy using methylalkyls

Toshiya Yokogawa, Mototsugu Ogura, and Takao Kajiwara

Appl. Phys. Lett. 49, 1702 (1986); http://dx.doi.org/10.1063/1.97220 (3 pages) | Cited 38 times

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Good quality ZnSe‐ZnS strained‐layer superlattice (SLS) has been successfully fabricated for the first time by low pressure metalorganic vapor phase epitaxy (MOVPE) using methylalkyls (dimethylzinc, dimethylselenide, and dimethylsulfide). The satellite peak observed by x‐ray diffraction measurements and the periodic behavior of the atomic profiles by secondary ion mass spectrometry measurements confirm the formation of the SLS structure. From the photoluminescence measurements, the quantum size effect has been evidenced by the relationship between the ZnSe well‐layer thickness and the peak energy shift of the light emission. Our results show that low pressure MOVPE using VI group alkyls can be quite useful for the growth of ZnSe‐ZnS SLS.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology

Antiphase disorder in epitaxial GaAs films grown on CaxSr1−xF2 (100) with higher crystallographic symmetry

Kazuo Tsutsui, Hiroshi Ishiwara, and Seijiro Furukawa

Appl. Phys. Lett. 49, 1705 (1986); http://dx.doi.org/10.1063/1.97221 (3 pages) | Cited 6 times

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Antiphase disorder in the top layer of GaAs/Ca0.5Sr0.5F2/GaAs(100) semiconductor‐on‐insulator structure was revealed by preferential chemical etching. The domains were rotated by 90° with respect to each other on the (100) surface. The origin of this antiphase disorder is considered to be the growth of the twofold symmetrical crystal of GaAs(100) on the fourfold symmetrical crystal of CaxSr1−xF2(100).
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68.55.-a Thin film structure and morphology
81.65.-b Surface treatments
68.35.Rh Phase transitions and critical phenomena
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Effect of crystal stoichiometry on activation efficiency in Si implanted, rapid thermal annealed GaAs

A. R. Von Neida, S. J. Pearton, M. Stavola, and R. Caruso

Appl. Phys. Lett. 49, 1708 (1986); http://dx.doi.org/10.1063/1.97222 (3 pages) | Cited 23 times

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A dramatic dependence on crystal stoichiometry has been observed for the donor activation efficiency of low doses of Si ions implanted into undoped semi‐insulating GaAs. Samples from liquid encapsulated Czochralski crystals grown from melts containing As concentrations varying from 47 1/2 to 65 at. % were implanted with 100 keV 29Si ions at a dose of 5×1012 cm−2. Following a rapid, capless annealing cycle (950 °C, 5 s), the surface‐depletion corrected activation efficiency ranged from 26 to 91%, with the higher efficiencies for higher As concentrations. In contrast, co‐implantation of As and Si into standard (50 at. % As) GaAs resulted in an increase in activation efficiency from 59 to 68% for optimum As doses.
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61.72.U- Doping and impurity implantation
61.50.Nw Crystal stoichiometry
72.20.-i Conductivity phenomena in semiconductors and insulators
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Transient enhanced diffusion of phosphorus in silicon

N. E. B. Cowern, D. J. Godfrey, and D. E. Sykes

Appl. Phys. Lett. 49, 1711 (1986); http://dx.doi.org/10.1063/1.97223 (3 pages) | Cited 18 times

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The diffusion of phosphorus implanted at low dose into crystalline silicon has been investigated as a function of dose and furnace anneal time. A major feature is an initial transient diffusion enhancement, comparable with the well‐known transient in boron diffusion. The transient is larger than expected from published studies using rapid thermal annealing.
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66.30.J- Diffusion of impurities
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Atomic structure of the GaAs/Si interface

R. Hull, S. J. Rosner, S. M. Koch, and J. S. Harris

Appl. Phys. Lett. 49, 1714 (1986); http://dx.doi.org/10.1063/1.97224 (3 pages) | Cited 18 times

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The atomic structure of the GaAs/Si(100) interface is studied using high resolution transmission electron microscopy. The samples studied were grown by molecular beam epitaxy using a conventional two‐step growth process of a relatively low‐temperature (405 °C) GaAs buffer layer followed by a higher temperature (575 °C) device layer. Following this growth procedure, the interface is found to be atomically rough with nonuniform distributions of steps, and to contain regions of disrupted crystallinity. These regions are found to be more prevalent in material which has undergone only low‐temperature (buffer layer) GaAs deposition. By using the atomic resolution microscope at the National Center for Electron Microscopy, Lawrence Berkeley Laboratories, we are also able to atomically image the same area of interface along orthogonal 〈011〉 directions, observing qualitatively similar structures.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Femtosecond carrier relaxation in semiconductor‐doped glasses

M. C. Nuss, W. Zinth, and W. Kaiser

Appl. Phys. Lett. 49, 1717 (1986); http://dx.doi.org/10.1063/1.97225 (3 pages) | Cited 55 times

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Light induced changes of absorption in semiconductor‐doped glasses are studied on the femtosecond and picosecond time scale. Extremely rapid absorption recovery times of 200 fs are found when carriers are excited with large excess energy (500 meV) above the absorption edge of the semiconductor‐doped glasses. Excitation close to the band edge results in a slower absorption recovery with a time constant of τ≂100 ps.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
73.40.Ty Semiconductor-insulator-semiconductor structures
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics

Limited reaction processing: Growth of III‐V epitaxial layers by rapid thermal metalorganic chemical vapor deposition

S. Reynolds, D. W. Vook, and J. F. Gibbons

Appl. Phys. Lett. 49, 1720 (1986); http://dx.doi.org/10.1063/1.97226 (3 pages) | Cited 20 times

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We have demonstrated a new technique for III‐V epitaxial layer growth combining rapid thermal processing and metalorganic chemical vapor deposition. This technique yields enhanced layer thickness control and abrupt interfaces while maintaining a high growth rate (≥10 Å/s). Multilayer structures have been grown with smooth, featureless surfaces and good electrical quality (Nd=2×1016 cm−3, μn=3000 cm2/V s) using trimethylarsenic and trimethylgallium.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Growth of selective tungsten films on self‐aligned CoSi2 by low pressure chemical vapor deposition

P. van der Putte, D. K. Sadana, E. K. Broadbent, and A. E. Morgan

Appl. Phys. Lett. 49, 1723 (1986); http://dx.doi.org/10.1063/1.97227 (3 pages) | Cited 2 times

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The selective deposition of tungsten films onto CoSi2 and onto Co by low pressure chemical vapor deposition and their material properties have been investigated with Auger electron spectroscopy, transmission electron microscopy, and Rutherford backscattering. When using WF6 and H2, uniformly thick tungsten films can be deposited onto CoSi2 without substrate alteration. In patterned structures, however, void formation was found at the perimeters of CoSi2 contacts to silicon, indicating encroachment of WF6 down the edge of the silicide‐Si interface. In WF6 and Ar, the film thickness was limited to 10 nm and some Si was locally consumed from the upper part of the CoSi2 film. Transmission electron diffraction showed evidence of Co2Si formation in these areas.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Femtosecond optical measurement of hot‐carrier relaxation in GaAs, AlGaAs, and GaAs/AlGaAs multiple quantum well structures

M. J. Rosker, F. W. Wise, and C. L. Tang

Appl. Phys. Lett. 49, 1726 (1986); http://dx.doi.org/10.1063/1.97228 (3 pages) | Cited 46 times

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The ultrafast relaxation of photoexcited GaAs, AlGaAs, and GaAs/AlGaAs quantum well structures has been studied using the equal‐pulse correlation technique. Improvements in experimental method now allow extraction of decay times directly from the measured transmission through optically thin samples. Two or three distinct exponential decays are resolved for each material, with the fastest time constant measured to be ∼40 fs in each case. A tentative explanation of the data in terms of known scattering processes is given.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
75.20.Ck Nonmetals
72.20.Dp General theory, scattering mechanisms
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Self‐aligned enhancement‐mode and depletion‐mode GaAs field‐effect transistors employing the δ‐doping technique

E. F. Schubert, J. E. Cunningham, and W. T. Tsang

Appl. Phys. Lett. 49, 1729 (1986); http://dx.doi.org/10.1063/1.97229 (3 pages) | Cited 20 times

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This work describes a self‐aligned Schottky‐gate field‐effect transistor (FET) which uses the δ‐doping technique during crystal growth by molecular beam epitaxy. In this new FET the δ‐doping concepts are employed in three ways: (i) for the highly doped surface to obtain nonalloyed ohmic contacts, (ii) to decrease the parasitic resistances, and (iii) for the electron channel below the gate. A two‐dimensional electron gas in a V‐shaped quantum well is formed by the δ‐doped electron channel. The advantage of nonalloyed ohmic contacts allows us to use a new two‐mask, self‐aligned FET process to further reduce the parasitic resistances. Both enhancement‐mode and depletion‐mode δ‐doped GaAs field‐effect transistors are fabricated. The measured transconductance of the δ‐doped field‐effect transistor is 240 mS/mm and is comparable to values obtained from selectively doped heterostructure transistors of the same geometry.
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85.30.Tv Field effect devices
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Cg Contact resistance, contact potential
73.30.+y Surface double layers, Schottky barriers, and work functions

High resolution scanning photoluminescence characterization of semi‐insulating GaAs using a laser scanning microscope

J. Marek, A. G. Elliot, V. Wilke, and R. Geiss

Appl. Phys. Lett. 49, 1732 (1986); http://dx.doi.org/10.1063/1.97230 (3 pages) | Cited 17 times

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Spatially resolved photoluminescence properties of semi‐insulating, liquid encapsulated Czochralski‐grown GaAs substrates are analyzed with a laser scanning microscope. The improved resolution of the laser scanning microscope results in the observation of single dislocations within the subgrain boundaries of the polyganized dislocation cell network for the first time by photoluminescence. Both the cell structure and the Cottrell cloud are clearly resolved.
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78.40.Fy Semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
07.60.Pb Conventional optical microscopes
78.30.-j Infrared and Raman spectra

p‐type CdTe epilayers grown by photoassisted molecular beam epitaxy

R. N. Bicknell, N. C. Giles, and J. F. Schetzina

Appl. Phys. Lett. 49, 1735 (1986); http://dx.doi.org/10.1063/1.97231 (3 pages) | Cited 29 times

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We report the first successful substitutional doping of CdTe films with antimony. These p‐type epilayers were prepared using a new technique, photoassisted molecular beam epitaxy, in which the substrate is illuminated during the film deposition process. Illumination was found to produce immediate and favorable changes in the electrical properties of the CdTe:Sb films such that highly activated p‐type layers resulted. CdTe:Sb films grown under similar conditions, but in the absence of illumination, were found to be insulating.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.40.Tv Optical and dielectric properties related to treatment conditions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

One‐dimensional transport in quantum well wire‐high electron mobility transistor

Perng‐fei Yuh and K. L. Wang

Appl. Phys. Lett. 49, 1738 (1986); http://dx.doi.org/10.1063/1.97232 (3 pages) | Cited 17 times

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A novel one‐dimensional electron gas field‐effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two‐dimensional electron gas FET. The FET structure, device operation, and the low‐field mobility of impurity scattering, which takes the screening effect into account, are discussed.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Fr Low-field transport and mobility; piezoresistance

n‐InAs/GaAs heterostructure superconducting weak links with Nb electrodes

A. W. Kleinsasser, T. N. Jackson, G. D. Pettit, H. Schmid, J. M. Woodall, and D. P. Kern

Appl. Phys. Lett. 49, 1741 (1986); http://dx.doi.org/10.1063/1.97233 (3 pages) | Cited 11 times

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We report on the fabrication and characterization of planar superconductor‐normal‐superconductor (SNS) weak links in which the normal region is deposited n‐InAs. The InAs is part of a heterostructure consisting of 100 nm of n‐InAs grown on an undoped GaAs buffer layer on a semi‐insulating GaAs substrate. The superconductor is Nb, patterned by electron beam lithography with interelectrode spacings as small as 260 nm. Device behavior is well explained by SNS weak link theory, with coherence lengths calculated from measured material parameters. These heterostructure weak links can be the basis for superconducting field‐effect devices. They have the significant advantage of allowing simple device isolation compared with bulk InAs, which has been used in previous attempts to make such devices.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
73.40.Sx Metal-semiconductor-metal structures
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

One‐third (period three) harmonic generation in microwave‐driven Josephson tunnel junctions

J. Bindslev Hansen, J. Clarke, J. Mygind, G. A. Ovsyannikov, and H. Svensmark

Appl. Phys. Lett. 49, 1744 (1986); http://dx.doi.org/10.1063/1.97234 (3 pages) | Cited 1 time

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One‐third harmonic signals have been generated in the zero voltage state of a Josephson tunnel junction driven with a microwave current in the frequency range 8–20 GHz. The signal was as much as 50 dB above the noise level of the detector with a linewidth of less than 100 Hz. The junction parameters and microwave current were measured in situ in separate experiments. The subharmonic generation occurred for ranges of microwave current and frequency that were in reasonable agreement with the results of digital computer simulations.
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74.50.+r Tunneling phenomena; Josephson effects
84.40.Dc Microwave circuits
85.25.-j Superconducting devices
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