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28 Jul 1986

Volume 49, Issue 4, pp. 185-229


Influence of external mirror on antireflection‐coated phased‐array semiconductor lasers

Amos Hardy, William Streifer, and Marek Osiński

Appl. Phys. Lett. 49, 185 (1986); http://dx.doi.org/10.1063/1.97164 (3 pages) | Cited 6 times

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We have analyzed a phased‐array semiconductor laser coupled to an external cavity containing a spatial filter. The results indicate that the external cavity‐spatial filter combination couples the natural supermodes of the array. Thus if a single supermode were to be emitted by the antireflection‐coated facet, the reflected field would couple into many supermodes of the same parity. By self‐consistently modeling the laser‐cavity configuration we show that substantial mode mixing occurs in practical cases and its effect is more pronounced when the coupling coefficient is small.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Evidence of a charge induced contribution to the sputtering yield of insulating and semiconducting materials

A. J. Eccles, J. A. van den Berg, A. Brown, and J. C. Vickerman

Appl. Phys. Lett. 49, 188 (1986); http://dx.doi.org/10.1063/1.97165 (3 pages) | Cited 11 times

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Following the recent observation in this laboratory of a charge induced damage effect in insulators under inert gas ion bombardment, the influence of the charge state of the beam (ion or atom) on the sputtering yield of insulating and semiconducting materials has been investigated. A series of sputter measurements has been carried out on Au, Ta2O5, Si, GaAs, and glass using calibrated ion and atom fluxes. For this purpose a recently developed gun capable of producing raster‐scanned, microfocused energetic ion or atom beams was employed. While for the conductor Au, as expected, no effect was seen, for the remaining materials sputter yield increases of up to 150% were observed under ion bombardment which implies the existence of a substantial electronic sputtering effect in insulators and semiconductors due to low‐energy ion bombardment.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Improvements in AlGaAs laser diodes grown by molecular beam epitaxy using a compositionally graded buffer layer

T. Hayakawa, T. Suyama, M. Kondo, K. Takahashi, S. Yamamoto, and T. Hijikata

Appl. Phys. Lett. 49, 191 (1986); http://dx.doi.org/10.1063/1.97166 (3 pages) | Cited 8 times

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The effect of a compositionally graded buffer layer (CGBL) in AlGaAs laser diodes grown by molecular beam epitaxy is presented. The threshold current and the differential quantum efficiency are improved by a factor of ∼2. The lifetime is markedly improved by using a CGBL and it is comparable to that of lasers grown by liquid phase epitaxy.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

23.6% efficient low resistivity silicon concentrator solar cell

M. A. Green, M. Taouk, A. W. Blakers, S. Narayanan, Jianhua Zhao, and P. Campbell

Appl. Phys. Lett. 49, 194 (1986); http://dx.doi.org/10.1063/1.97167 (2 pages) | Cited 5 times

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Significant improvements are reported in the energy conversion efficiency of low resistivity silicon solar cells when measured under concentrated sunlight. These improvements result primarily from increased short‐circuit current density due to the use of a microgrooved cell structure with obliquely transversing metallization fingers. Peak efficiencies are 23.6% at 100 suns concentration with values up to 22.7% maintained at 273 suns concentration.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects

Electron beam stimulated chemical vapor deposition of patterned tungsten films on Si(100)

R. B. Jackman and J. S. Foord

Appl. Phys. Lett. 49, 196 (1986); http://dx.doi.org/10.1063/1.97168 (3 pages) | Cited 13 times

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Electron irradiation of WF6 films on Si has been studied using scanning Auger and electron microscopic techniques. In contrast to metal organics, electron stimulated decomposition of WF6 is found to result in formation of pure W deposits; patterned films are formed by scanning the focused electron beam. The morphology of the films is particulate and the manner in which this originates is discussed.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Quenched‐in defects in flashlamp‐annealed silicon

J. T. Borenstein, J. T. Jones, J. W. Corbett, G. S. Oehrlein, and R. L. Kleinhenz

Appl. Phys. Lett. 49, 199 (1986); http://dx.doi.org/10.1063/1.97169 (2 pages) | Cited 15 times

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Deep levels introduced in boron‐doped silicon by heat‐pulse annealing with a tungsten‐halogen flashlamp are investigated using deep level transient spectroscopy. Two majority‐carrier trapping levels in the band gap, at Ev+0.32 eV and at Ev+0.45 eV, are observed. These results are compared to those obtained by furnace quenching and laser annealing studies. Both the position in the gap and the annealing kinetics of the hole trap at Ev+0.45 eV suggest that this center is due to an interstitial iron impurity in the lattice. The deep levels are not consistently observed in all flashlamp‐annealed Si crystals utilized in the present work.
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78.40.Fy Semiconductors
61.72.Bb Theories and models of crystal defects
81.40.Rs Electrical and magnetic properties related to treatment conditions

Minority‐carrier mobility anomalies in low‐resistivity silicon solar cells

V. G. Weizer and R. DeLombard

Appl. Phys. Lett. 49, 201 (1986); http://dx.doi.org/10.1063/1.97170 (3 pages) | Cited 2 times

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Measurement of the minority‐carrier mobility in the base region of the high‐voltage metal‐insulator‐N‐P solar cell, as well as in other 0.1 Ω cm cells, provides direct proof that the high voltages measured for that cell are due not only to improved emitter characteristics but to an improved base region as well. The base characteristics are shown to be quite sensitive to the effects of diffusion induced lattice stress originating in the emitter. The implications of these findings with regard to the fabrication of high efficiency cells are discussed.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Surface oxidation of GaAs and AlGaAs in low‐energy Ar/O2 reactive ion beam etching

Haruhisa Kinoshita, Toshimasa Ishida, and Katsuzo Kaminishi

Appl. Phys. Lett. 49, 204 (1986); http://dx.doi.org/10.1063/1.97171 (3 pages) | Cited 4 times

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Ion beam etching (IBE) and reactive IBE (RIBE) of GaAs and AlxGa1−xAs(x=0.3–0.5) were examined using Ar and Ar/O2 (O2: 2.0 and 5.3 mol %). In Ar IBE of 100 eV or more, neither GaAs nor AlGaAs was substantially oxidized and equirate etching was observed. In 50 eV Ar/O2 (2–5.3%) RIBE, however, both GaAs and AlGaAs were oxidized and etched little. In 100 eV Ar/O2 (2%) RIBE, especially, AlGaAs was oxidized but GaAs was not, and a maximum selectivity of 13 was obtained in the etching of GaAs/Al0.5Ga0.5As. Impinging O+ ions were found to be the main origin of oxidation.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
52.40.Hf Plasma-material interactions; boundary layer effects
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

dc performance of ballistic tunneling hot‐electron transfer amplifiers

M. Heiblum, I. M. Anderson, and C. M. Knoedler

Appl. Phys. Lett. 49, 207 (1986); http://dx.doi.org/10.1063/1.97172 (3 pages) | Cited 22 times

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We present new experimental results of ballistic electron transport through thin n+‐GaAs layers. Measurements were done on tunneling hot‐electron transfer amplifier devices composed of GaAs and AlGaAs layers. In devices with GaAs active regions (bases) of 300 and 800 Å, collisionless or ballistic transport was observed. By performing hot‐electron energy spectroscopy we found that the collected ballistic distributions were similar in shape but differed in magnitude. This suggests the existence of a strong scattering mechanism which randomizes the otherwise ballistic electrons. The maximum differential current transfer ratio α was 0.9 in devices for which about 75% of the injected current traversed the base ballistically. The presence of ballistic transport has also allowed the measurement of the AlGaAs barrier height through observation of the onset of current collection in the devices. Barrier heights higher than those recently reported have been measured. In addition we show the effects of grading the collector barrier. The most noted effect in these cases was a higher transfer ratio.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Zn diffusion in InP: Effect of substrate dopant concentration

H. B. Serreze and H. S. Marek

Appl. Phys. Lett. 49, 210 (1986); http://dx.doi.org/10.1063/1.97173 (2 pages) | Cited 20 times

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We have performed open‐tube diffusion of Zn into n‐type InP over the temperature range 525–675 °C. For heavily doped InP, the observed diffusion profiles are consistent with an interstitial‐substitutional model where the interstitial Zn is doubly ionized. However, for undoped InP the profiles have a significantly different shape and the diffusion is deeper. Assumption of neutral interstitial Zn is able to account for these two changes. A tentative model is proposed to explain the dependence of the interstitial Zn ionization state on the starting substrate dopant concentration.
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66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation
68.35.Dv Composition, segregation; defects and impurities

Impact ionization coefficients in In0.2Ga0.8As/GaAs strained‐layer superlattices

G. E. Bulman, T. E. Zipperian, and L. R. Dawson

Appl. Phys. Lett. 49, 212 (1986); http://dx.doi.org/10.1063/1.97174 (3 pages) | Cited 6 times

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The impact ionization coefficients for electrons and holes have been measured in In0.2Ga0.8As/GaAs strained‐layer superlattices (SLS’s) for transport perpendicular to the superlattice. The pure electron and hole initiated primary photocurrents were produced in p+n mesa photodiodes having In0.1Ga0.9As alloy photon absorption regions and an SLS active region carrier concentration of 7.4×1015 cm−3. The impact ionization coefficient for electrons is found to be larger than for holes with a ratio that varies from 1.8 at 2.7×105 V/cm to 1.4 at 3.8×105 V/cm.
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79.20.Kz Other electron-impact emission phenomena
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Planar monolithic integrated photoreceiver for 1.3–1.55 μm wavelength applications using GaInAs‐GaAs heteroepitaxies

M. Razeghi, J. Ramdani, H. Verriele, D. Decoster, M. Constant, and J. Vanbremeersch

Appl. Phys. Lett. 49, 215 (1986); http://dx.doi.org/10.1063/1.97175 (3 pages) | Cited 9 times

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We report the first fabrication of a monolithic integrated circuit consisting of a Ga0.47In0.53As planar photoconductive detector (suitable for 1.3–1.55 μm wavelength optical communication systems) associated with a GaAs field‐effect transistor. The gain, response times, and noise properties of the photoconductive detector and the integrated photoreceiver have been investigated, taking into account particular aspects of the material and integrated circuit structure.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Enhancement of open circuit voltage in high efficiency amorphous silicon alloy solar cells

S. Guha, J. Yang, P. Nath, and M. Hack

Appl. Phys. Lett. 49, 218 (1986); http://dx.doi.org/10.1063/1.97176 (2 pages) | Cited 78 times

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We have developed a microcrystalline fluorinated p+ silicon alloy which has high dark conductivity and low optical loss. Incorporation of this material in single and tandem amorphous silicon alloy based solar cells has resulted in increased open circuit voltage and conversion efficiency.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
72.80.Ng Disordered solids
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy

W. T. Tsang and E. F. Schubert

Appl. Phys. Lett. 49, 220 (1986); http://dx.doi.org/10.1063/1.97177 (3 pages) | Cited 95 times

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We have prepared by chemical beam epitaxy extremely high quality Ga0.47In0.53As/InP quantum wells with thickness as thin as 6 Å. Emission as short as 1.09 μm at 2 K (1.14 μm at 300 K) was obtained. Very sharp intense efficient luminescence peaks due to excitonic transitions were obtained from all quantum wells. The photoluminescence (PL) linewidths at 2 K were the narrowest that have been ever reported for Ga0.47In0.53As quantum wells grown by any technique. In fact, these Ga0.47In0.53As quantum well linewidths are at least equal to the narrowest linewidths ever reported for the perfected GaAs/AlAs and GaAs/AlxGa1−xAs quantum wells. These linewidths indicate the ‘‘effective’’ interface roughness to be 0.12 lattice constant, which can be interpreted as that the quantum well was largely consisting of a big domain of the same thickness Lz perforated with a small fraction of small domains of (Lz+a0/2), where a0 (=5.86 Å) is the lattice constant. No broadening due to band filling from impurities was found. Alloy broadening in Ga0.47In0.53As was limited to the intrinsic value of 1.3 meV. The PL energy upshifts measured in Ga0.47In0.53As quantum wells were in excellent agreement with theoretical values.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.40.Fy Semiconductors

Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs‐GaxAl1−xAs interfaces

J. Cibert, P. M. Petroff, D. J. Werder, S. J. Pearton, A. C. Gossard, and J. H. English

Appl. Phys. Lett. 49, 223 (1986); http://dx.doi.org/10.1063/1.97178 (3 pages) | Cited 134 times

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The kinetics of implantation enhanced interdiffusion at GaAs‐GaxAl1−xAs interfaces is investigated by cathodoluminescence and transmission electron microscopy. Localized Ga+ implantation leads to enhancement of the interdiffusion by about two orders of magnitude at 950 °C. A complete recovery of the optical quality of the material and local alteration of the band gap is observed after rapid thermal annealing. The role of intrinsic interdiffusion is identified. Control of the interdiffusion kinetics has allowed the fabrication of ultrasmall structures with good optical properties.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers

High‐speed circuit measurements using photoemission sampling

J. Bokor, A. M. Johnson, R. H. Storz, and W. M. Simpson

Appl. Phys. Lett. 49, 226 (1986); http://dx.doi.org/10.1063/1.97179 (3 pages) | Cited 18 times

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High‐speed sampling of the voltage waveform on a microstrip transmission line is performed by exploiting the multiphoton photoelectric effect induced by a visible cw mode‐locked laser source. Energy analysis of the electrons emitted from the surface of the strip line is used to infer the emission point potential at the arrival time of the laser pulse. The technique may be applied to measure voltage waveforms on metallization lines of any integrated circuit or electronic device and is capable of picosecond time resolution and millivolt sensitivity.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
84.40.Az Waveguides, transmission lines, striplines
07.50.-e Electrical and electronic instruments and components
FREE

Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures [Appl. Phys. Lett. 47, 322 (1985)]

R. People and J. C. Bean

Appl. Phys. Lett. 49, 229 (1986); http://dx.doi.org/10.1063/1.97637 (1 page) | Cited 149 times

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Abstract Unavailable
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68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
99.10.Cd Errata
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