APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

4 Aug 1986

Volume 49, Issue 5, pp. 233-302

Page 1 of 2 Pages Next Page | Jump to Page

High‐speed dual‐wavelength demultiplexing and detection in a monolithic superlattice p‐i‐n waveguide detector array

A. Larsson, P. A. Andrekson, P. Andersson, S. T. Eng, J. Salzman, and A. Yariv

Appl. Phys. Lett. 49, 233 (1986); http://dx.doi.org/10.1063/1.97180 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
We demonstrate high‐speed (1 Gbit/s) dual‐wavelength demultiplexing and detection in a monolithic linear array of superlattice p‐i‐n photodetectors in a waveguide configuration. A crosstalk attenuation of 28 dB was achieved between two digital transmission channels with an interchannel wavelength spacing of 30 nm. The device performance is a result of an enhanced electroabsorption due to the quantum‐confined Stark effect in the superlattice p‐i‐n diodes.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.82.-m Integrated optics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Gn Optical waveguides and couplers

Generation of subpicosecond solitonlike optical pulses at 0.3 THz repetition rate by induced modulational instability

K. Tai, A. Tomita, J. L. Jewell, and A. Hasegawa

Appl. Phys. Lett. 49, 236 (1986); http://dx.doi.org/10.1063/1.97181 (3 pages) | Cited 82 times

Full Text: | Download PDF

Show Abstract
We report the generation of 0.5 ps full width at half‐maximum optical pulses at >0.3 THz (tunable) repetition rate via an induced modulational instability in a single‐mode fiber. A 1.319‐μm neodymium:yttrium aluminum garnet laser is chosen as the carrier wave and the initial modulation on this carrier is introduced by mixing it with an external‐grating‐cavity InGaAsP laser. The use of this all‐optical modulating scheme and the nonlinear optical propagation effect in fiber (i.e., modulational instability) allows one to reach into the terahertz regime, which is about two orders of magnitude beyond the fastest data limited by the finite response of electronics.
Show PACS
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Fc Modulation, tuning, and mode locking
42.81.Dp Propagation, scattering, and losses; solitons

High‐power lasing on the Ne i 540.0‐nm line in electron beam generated plasmas

K. Ono, T. Oomori, and S. Fujita

Appl. Phys. Lett. 49, 239 (1986); http://dx.doi.org/10.1063/1.97182 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
Self‐terminating lasing at megawatt power levels was observed on the Ne i 540.0‐nm line under longitudinal electron beam excitation. A 700‐kV, 12‐kA, 50‐ns electron beam was injected into a stainless‐steel drift tube, 175 cm long and 13.4 cm in inner diameter, filled with neutral neon gas in the pressure range 0.1≤P0≤100 Torr. The drift tube was immersed in an axial magnetic guide field in the range 0≤B0≤4.2 kG. Lasing was found to occur for P0≳3 Torr, in the amplified spontaneous emission mode of operation. A maximum output pulse energy of ∼2 mJ was obtained for P0=100 Torr and B0=4.2 kG, corresponding to a peak power of ∼1 MW with an output pulse of ∼2 ns full width at half‐maximum.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.30.Jc Visible and ultraviolet spectra
52.40.Mj Particle beam interactions in plasmas
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Single‐crystal, optical interference filters and integrated high reflector/photodiode using multilayers of GaP and GaAsxP1−x

P. L. Gourley, R. M. Biefeld, and T. E. Zipperian

Appl. Phys. Lett. 49, 242 (1986); http://dx.doi.org/10.1063/1.97619 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
Using metalorganic chemical vapor deposition, we have produced single‐crystal optical interference filters (high reflectors and antireflectors) with alternating quarter‐wave thick layers (in the range 300–600 Å) of GaP and GaAsxP1−x. We have measured reflectance values from 0.08 to 0.90 at selected wavelengths from 460 to 750 nm. These filters have the unique feature that their design wavelength can be shorter than that corresponding to the energy band gap of the multilayer. In addition, we have produced an integrated optical detector in which a photodiode and an electrically active high reflector were grown sequentially in a single growth run. The spectral characteristics of the filters and integrated detector are reported here.
Show PACS
42.79.Ci Filters, zone plates, and polarizers
85.60.Dw Photodiodes; phototransistors; photoresistors
42.82.-m Integrated optics
75.20.Ck Nonmetals

Optical emission at 1.32 μm from sulfur‐doped crystalline silicon

T. G. Brown and D. G. Hall

Appl. Phys. Lett. 49, 245 (1986); http://dx.doi.org/10.1063/1.97183 (3 pages) | Cited 38 times

Full Text: | Download PDF

Show Abstract
We report the observation of efficient photoluminescence from a new sulfur‐related impurity in crystalline silicon. We tentatively identify this emission as bound‐exciton luminescence from sulfur‐related isoelectronic impurities. We present the results of measurements of the lifetime, temperature dependence, and external efficiency of the 1.32 μm band.
Show PACS
78.40.Fy Semiconductors
71.35.-y Excitons and related phenomena

Second harmonic generation in poled polymer films

K. D. Singer, J. E. Sohn, and S. J. Lalama

Appl. Phys. Lett. 49, 248 (1986); http://dx.doi.org/10.1063/1.97184 (3 pages) | Cited 309 times

Full Text: | Download PDF


See Also: Erratum

Show Abstract
We report the observation of second harmonic generation in a new class of organic polymeric materials, namely, electric field poled polymer glasses. Both the observed second harmonic coefficient (d33=6.0±1.3×10−9 esu, at 1.58 μm wavelength) and the poling process are described by a thermodynamic model that we have developed. The ability to form thin films from these materials may qualify them for integrated optics applications.
Show PACS
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
75.20.Ck Nonmetals
42.82.-m Integrated optics
05.70.-a Thermodynamics

Metal halide saturable absorbers at 248 nm

R. D. Kaplan and R. B. Gibson

Appl. Phys. Lett. 49, 251 (1986); http://dx.doi.org/10.1063/1.97185 (2 pages)

Full Text: | Download PDF

Show Abstract
Optical transmissions of CsI and NaBr vapor are measured at 248 nm. Absorption of these representative alkali metal halides saturates at 10–100 mJ cm−2 fluence. Ratio of small‐signal to saturated absorption coefficients is of order 10.
Show PACS
51.70.+f Optical and dielectric properties
42.25.Lc Birefringence

Novel attenuated total internal reflectance spectroscopic cell using infrared fibers for aqueous solutions

S. Simhony, E. M. Kosower, and A. Katzir

Appl. Phys. Lett. 49, 253 (1986); http://dx.doi.org/10.1063/1.97186 (2 pages) | Cited 31 times

Full Text: | Download PDF

Show Abstract
Silver halide (AgCl:AgBr) fibers were used as the light conductor for total internal reflection measurements in a Fourier transform infrared (FTIR) spectrometer, to obtain spectra of aqueous solutions. The use of optical fibers in an attenuated total reflectance type cell with an FTIR spectrometer was demonstrated for the first time. Spectra of acetone in water and of glycine in water were acquired with the cell.
Show PACS
42.81.Dp Propagation, scattering, and losses; solitons
42.81.Bm Fabrication, cladding, and splicing
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
78.30.C- Liquids

F2 fuel performance in XeF lasers at ambient and elevated temperatures

W. D. Kimura, S. E. Moody, and J. F. Seamans

Appl. Phys. Lett. 49, 255 (1986); http://dx.doi.org/10.1063/1.97187 (2 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
Extraction measurements of an electron beam pumped XeF laser using either F2 or NF3 as the halogen fuel (neon diluent) are presented. The laser efficiency is measured as a function of output coupling reflectivity and initial gas temperature. Despite the known absorption of F2 at the lasing wavelength (351, 353 nm), the laser efficiency is essentially identical when using either halogen fuel. Gas lifetime when using NF3 is shortened by the formation of nitrogen compounds which degrade the laser performance; this is not the case when using F2. Hence, the ability to use F2 without sacrificing laser efficiency has important implications with regard to the selection of a halogen fuel for extended gas lifetime operation.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Anomalous first‐phase formation in rapidly thermal annealed, thin‐layered Si/Ni/Si films

Menachem Natan

Appl. Phys. Lett. 49, 257 (1986); http://dx.doi.org/10.1063/1.97188 (3 pages) | Cited 27 times

Full Text: | Download PDF

Show Abstract
The initial stages of silicide formation in very thin‐layered Si/Ni/Si films reacted by rapid (pulsed) annealings were investigated using the rapid thermal annealing/transmission electron microscopy technique. At least four phases, NiSi, δNi2Si, θNi2Si, and Ni31Si12, are shown to form first after 1 s annealings in the 175‐300 °C temperature regime; the actual phase and its nucleation kinetics depend on the Si:Ni ratio and on substrate deposition temperature. An amorphous (Ni+Si) mixture is shown to exist as a precursor to θNi2Si and NiSi. The multiplicity of ‘‘first’’ phases and the dependence on the Si:Ni ratio contradict various ‘‘first‐phase’’ rules and steady‐state annealing data obtained on thicker films and in metal‐Si wafer reactions. A simple model that accounts for the stoichiometry and substrate‐temperature dependences is suggested.
Show PACS
68.55.Nq Composition and phase identification
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.Fx Diffusion; interface formation

Orientational dependence of the electron beam induced order‐disorder transition in quasicrystalline Al86Mn14

E. R. Murray and D. G. Ast

Appl. Phys. Lett. 49, 260 (1986); http://dx.doi.org/10.1063/1.97189 (2 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
The order‐disorder transition of quasicrystalline Al86Mn14 under 1 MeV electron irradiation at 135 K was investigated. The dose required to completely amorphize an area was found to depend on the axis aligned with the beam. Analysis showed that, for a given orientation, the transition obeyed the excluded volume theory of disordering. The dose required was not directly proportional to the current density which indicates that some recovery takes place during irradiation.
Show PACS
61.80.Fe Electron and positron radiation effects
64.70.K- Solid-solid transitions
61.50.Ks Crystallographic aspects of phase transformations; pressure effects

Involvement of oxygen‐vacancy defects in enhancing oxygen diffusion in silicon

A. S. Oates and R. C. Newman

Appl. Phys. Lett. 49, 262 (1986); http://dx.doi.org/10.1063/1.97190 (3 pages) | Cited 28 times

Full Text: | Download PDF

Show Abstract
We have proposed previously that the extremely high rate of single diffusion jumps of oxygen atoms in silicon during electron irradiation of crystals above 300 °C is due to the sequential trapping and detrapping of vacancies. In support of this proposal we now demonstrate thermal dissociation of up to 75% of oxygen‐vacancy centers by monitoring their destruction in irradiated and annealed crystals. An important new step is the calibration of the strength of the infrared 830 cm−1 absorption band via a novel procedure to give the concentration of oxygen‐vacancy complexes in crystals.
Show PACS
61.72.jd Vacancies
61.72.jj Interstitials
61.72.Bb Theories and models of crystal defects
61.80.Fe Electron and positron radiation effects
66.30.J- Diffusion of impurities

Detection of In‐P and In‐Sb atom pairs by perturbed angular correlation in silicon

M. L. Swanson, Th. Wichert, and A. F. Quenneville

Appl. Phys. Lett. 49, 265 (1986); http://dx.doi.org/10.1063/1.97136 (3 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
We report the observation of In‐P and In‐Sb atom pairs in Si using the perturbed γγ angular correlation technique with 111In as radioactive probe atoms. The pairs are characterized by νQ=179(1) MHz and 271(1) MHz, respectively, and their electric field gradient tensors are axially symmetric about a 〈111〉 lattice direction. The results suggest a strong interaction between acceptor and donor atoms in elemental semiconductors like Si and Ge.
Show PACS
61.72.uf Ge and Si
61.72.Yx Interaction between different crystal defects; gettering effect
66.30.J- Diffusion of impurities
76.80.+y Mössbauer effect; other γ-ray spectroscopy

Light‐activated charge storage in amorphous silicon‐carbon films

R. Könenkamp and S. M. Paasche

Appl. Phys. Lett. 49, 268 (1986); http://dx.doi.org/10.1063/1.97137 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
It is shown that deep trapping of excess carriers in amorphous silicon‐carbon films can be used for charge storage applications. Using surface‐near pulsed carrier generation ‘‘write,’’ ‘‘read,’’ and ‘‘erase’’ operations are illustrated and charge retention times determined for a set of films with differing carbon contents.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Ng Disordered solids
72.40.+w Photoconduction and photovoltaic effects

Study of ballistic transport in Si‐CoSi2‐Si metal base transistors

E. Rosencher, P. A. Badoz, J. C. Pfister, F. Arnaud d’Avitaya, G. Vincent, and S. Delage

Appl. Phys. Lett. 49, 271 (1986); http://dx.doi.org/10.1063/1.97138 (3 pages) | Cited 35 times

Full Text: | Download PDF

Show Abstract
The hot‐electron transfer ratio from the Schottky emitter diode to the Schottky collector diode through the thin base layer of Si‐CoSi2‐Si metal base transistors has been measured in devices for which the pinhole contribution to the current gain is shown by transconductance measurements to be negligible. The common‐base current gain α of the transistors, measured as a function of temperature and base thickness, exhibits an exponential dependence on CoSi2 film thickness, from which a ballistic mean free path is deduced. This value is in good agreement with the mean free path deduced from conductivity data, both at 77 and 300 K. The behavior of the pre‐exponential coefficient, i.e., the gain extrapolated to zero base thickness, is not completely understood and shows evidence for hot‐electron and space‐charge effects in the epitaxial overgrown Si material of the emitter.
Show PACS
85.30.Hi Surface barrier, boundary, and point contact devices
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Vz Semiconductor-metal-semiconductor structures

Improved uniformity of epitaxial indium‐based compounds by atomic layer epitaxy

M. A. Tischler and S. M. Bedair

Appl. Phys. Lett. 49, 274 (1986); http://dx.doi.org/10.1063/1.97139 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
Atomic layer epitaxy (ALE) has been employed to grow InAs and InxGa1−xAs (0<x<0.43). The ALE of InAs, for example, proceeds by the deposition of a single layer of In followed by the deposition of a single layer of As. This cycle is repeated until the desired thickness is achieved. The column III and column V species are physically separated and thus the gas phase reaction between triethylindium and AsH3 is greatly reduced. This leads to improved incorporation of indium in the solid and improved compositional uniformity across the substrate. A self‐limiting mechanism has been found which controls the thickness deposited per cycle to about one monolayer independent of the column III flux.
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification

High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interface

N. Otsuka, C. Choi, Y. Nakamura, S. Nagakura, R. Fischer, C. K. Peng, and H. Morkoç

Appl. Phys. Lett. 49, 277 (1986); http://dx.doi.org/10.1063/1.97140 (3 pages) | Cited 73 times

Full Text: | Download PDF

Show Abstract
Recent studies have shown that high quality GaAs films can be grown by molecular beam epitaxy on Si substrates whose surfaces are slightly tilted from the (100) plane. In order to investigate the effect of the tilting of substrate surfaces on the formation of defects, the atomic structure in the GaAs/Si epitaxial interface has been studied with a 1‐MV ultrahigh vacuum, high voltage electron microscope. Two types of misfit dislocations, one with Burgers vectors parallel to the interface and the other with Burgers vectors inclined from the interface by 45°, were found in the epitaxial interface. The observation of two cross‐sectional samples perpendicular to each other has shown that the tilting of the substrate surface directly influences the formation of these two types of misfit dislocations. A possible mechanism of the reduction of threading dislocations by tilting the substrate surface is discussed based on these observations.
Show PACS
68.35.Dv Composition, segregation; defects and impurities
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Amplification of bulk and surface plasmons in semiconductor superlattices

Pawel Hawrylak and John J. Quinn

Appl. Phys. Lett. 49, 280 (1986); http://dx.doi.org/10.1063/1.97141 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
We study the amplification of bulk and surface plasmons in a type II semiconductor superlattice, which consists of a semi‐infinite array of spatially separated electron and hole layers. Amplification is achieved by imposing an external drift velocity on the electrons. For drift velocities exceeding a threshold value, bulk plasmons can be amplified for an arbitrary plasmon wave vector parallel to the layers. Amplification of surface plasmons can occur only for finite wave vectors. Drift velocities required for these processes are calculated and are shown to be experimentally feasible.
Show PACS
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Power loss by two‐dimensional holes in coherently strained Ge0.2Si0.8/Si heterostructures: Evidence for weak screening

Y. H. Xie, R. People, J. C. Bean, and K. W. Wecht

Appl. Phys. Lett. 49, 283 (1986); http://dx.doi.org/10.1063/1.97142 (3 pages) | Cited 23 times

Full Text: | Download PDF

Show Abstract
We have used the hot‐carrier Shubnikov–de Haas effect to measure the power loss by hot two‐dimensional holes in coherently strained Ge0.2Si0.8/Si heterostructures. The measured power loss versus carrier temperature data are best described by the two‐dimensional formalism of P. J. Price [J. Appl. Phys. 53, 6864 (1982)] assuming weak screening. Excellent agreement with experiment is obtained only if scattering of the acoustic mode phonons by both the deformation potential and the piezoelectric coupling mechanisms are considered. We are therefore able to deduce a value for the piezoelectric constant for Ge0.2Si0.8 which is approximately 35% of that for InAs (e2pz≊0.22×108 dyne/cm2). In light of the fact that charge transfer effects are expected to be small in bulk (unstrained) GexSi1−x, the present observations are indicative of either a large strain induced change in ionicity or of scattering of acoustic phonons from ordered domains via the piezoelectric mechanism.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
77.65.-j Piezoelectricity and electromechanical effects
43.35.Gk Phonons in crystal lattices, quantum acoustics
63.20.-e Phonons in crystal lattices

Ge‐Si layered structures: Artificial crystals and complex cell ordered superlattices

J. Bevk, J. P. Mannaerts, L. C. Feldman, B. A. Davidson, and A. Ourmazd

Appl. Phys. Lett. 49, 286 (1986); http://dx.doi.org/10.1063/1.97143 (3 pages) | Cited 92 times

Full Text: | Download PDF

Show Abstract
We report the first successful synthesis of ordered GeSi superlattices grown on (001) Si substrates by molecular beam epitaxy. Two types of structures were prepared and characterized: superlattices with one‐dimensional periodicity of one unit cell (GeGeSiSi...) and complex cell superlattices made up of sublayers of pure Si and alternating bilayers of Ge and Si. In the first case, the artificial stacking in the [001] direction results in a vertical array of alternating Ge and Si monolayers parallel to the (110) or (110) planes. In spite of the lattice mismatch of 4.2%, Rutherford backscattering and channeling experiments indicate high quality crystallinity in both types of structures. Long‐range order is deduced from the electron diffraction patterns that exhibit characteristic superlattice reflections and from high resolution lattice imaging. The precise deposition control on the scale of a fraction of a monolayer should allow band structure engineering in this and in other related systems and in turn tailoring of the transport and optical properties over a wide range.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
75.20.Ck Nonmetals
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Measurements of the critical resolved shear stress for indium‐doped and undoped GaAs single crystals

M. G. Tabache, E. D. Bourret, and A. G. Elliot

Appl. Phys. Lett. 49, 289 (1986); http://dx.doi.org/10.1063/1.97144 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
Direct measurements of the critical resolved shear stress of undoped and indium‐doped GaAs single crystals at high temperatures have been performed using dynamical compression tests. At the melting point the critical resolved shear stress of GaAs:In is only twice that of undoped GaAs. At low temperatures, the activation energy for the motion of dislocations is not affected by indium doping. From these findings we conclude that crystallographic glide is not the only cause of dislocation formation in these GaAs crystals and solution hardening is not responsible for the reduction in dislocation density in GaAs:In.
Show PACS
81.40.Lm Deformation, plasticity, and creep
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Delta‐doped ohmic contacts to n‐GaAs

E. F. Schubert, J. E. Cunningham, W. T. Tsang, and T. H. Chiu

Appl. Phys. Lett. 49, 292 (1986); http://dx.doi.org/10.1063/1.97145 (3 pages) | Cited 40 times

Full Text: | Download PDF


See Also: Erratum

Show Abstract
A new type of nonalloyed ohmic contact to GaAs is realized by molecular beam epitaxy. The ohmic characteristic of the metal‐semiconductor junction is obtained by placing a highly δ‐doped donor layer a few lattice constants away from the metal‐semiconductor interface of the contact and thus keeping the tunneling barrier extremely thin. The current‐voltage characteristic of the δ‐doped contacts is strictly linear. The measured contact resistance is in the 10−6 Ω cm2 range. Theoretical analysis of the tunneling current through the triangular barrier predicts contact resistances in the range 10−7–10−9 Ω cm2. In spite of the high doping concentration (≂1021 cm−3) the surface morphology of the sample shows no degradation.
Show PACS
73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
73.40.Gk Tunneling
68.55.-a Thin film structure and morphology

Formation of a superconducting hexagonal Nb‐Si phase by pulsed laser quenching

Wen‐Kui Wang and Frans Spaepen

Appl. Phys. Lett. 49, 295 (1986); http://dx.doi.org/10.1063/1.97146 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
A new metastable phase of composition NbxSi1−x (0.72<x<0.78) has been synthesized by nanosecond and picosecond pulsed laser quenching. The structure was studied by electron diffraction and found to be hexagonal with lattice parameters a=0.748 nm and c=0.514 nm (for x=0.75). The superconducting transition temperature Tc (for x=0.78) was 2.7 K.
Show PACS
74.10.+v Occurrence, potential candidates
74.25.-q Properties of superconductors
64.70.K- Solid-solid transitions
61.66.Dk Alloys

Peroxypolytungstic acids: A new inorganic resist material

Hiroshi Okamoto, Takao Iwayanagi, Kozo Mochiji, Hiroshi Umezaki, and Tetsuichi Kudo

Appl. Phys. Lett. 49, 298 (1986); http://dx.doi.org/10.1063/1.97147 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
Recently reported amorphous polytungstic acids containing peroxo groups are found to provide a new inorganic resist. A homogeneous resist film can be formed easily with the spin coating method. This film is made insoluble in water by deep ultraviolet, x ray, and electron beam irradiation. The oxygen reactive ion etching (O2 RIE) durability is found to be high enough that a bilayer resist scheme employing this resist as a top imaging layer gives a high resolution pattern (line and space: 0.38 μm). The mechanism for the radiation induced reaction is also discussed.
Show PACS
81.65.-b Surface treatments
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.50.-m Photochemistry
FREE

Comment on ‘‘Spatially resolved defect mapping in semiconductors using laser‐modulated thermoreflectance’’ [Appl. Phys. Lett. 47, 1336 (1985)]

Allan Rosencwaig, Jon Opsal, W. L. Smith, and D. L. Willenborg

Appl. Phys. Lett. 49, 301 (1986); http://dx.doi.org/10.1063/1.97148 (1 page) | Cited 1 time

Full Text: | Download PDF

Abstract Unavailable
Show PACS
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
72.30.+q High-frequency effects; plasma effects
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close