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11 Aug 1986

Volume 49, Issue 6, pp. 305-359


Infrared optical properties of polycrystalline silver halide fibers

A. Sa’ar, F. Moser, S. Akselrod, and A. Katzir

Appl. Phys. Lett. 49, 305 (1986); http://dx.doi.org/10.1063/1.97150 (3 pages) | Cited 14 times

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The power transmission characteristics at 10.6 μm, and the infrared spectral transmission from 2 to 13 μm, of extruded silver halide fibers of composition AgCl0.95Br0.05 have been investigated. The transmitted power at 10.6 μm remains linearly dependent on the input power up to at least 40 W, with a total loss coefficient of about 0.7 dB/m. The output power has a Gaussian shape with an angular width of 60° independent of the input power geometry in a fiber of about 2 m length. The spectral transmission shows a number of sharp absorption features attributed to water and CO−23 impurities, superimposed on a background loss that can be fit to an expression of the form (16.2λ−2+0.5) dB/m, with λ in μm. This background is a consequence of the scattering mechanism in these fibers.
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42.81.Dp Propagation, scattering, and losses; solitons
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.-j Infrared and Raman spectra
42.79.Gn Optical waveguides and couplers

Microwave equivalent circuit representation of rectangular dielectric waveguides

N. Dagli and C. G. Fonstad

Appl. Phys. Lett. 49, 308 (1986); http://dx.doi.org/10.1063/1.97151 (3 pages) | Cited 5 times

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Using a mode matching technique, a microwave equivalent circuit which incorporates contributions from both guided and continuum spectra has been developed to model rectangular dielectric waveguides. The equivalent circuit is modular and can be applied to complex structures. Accurate results are obtained with limited computational effort.
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84.40.Az Waveguides, transmission lines, striplines
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
84.40.Lj Microwave integrated electronics

Technique to produce coherent x‐ray radiation via laser pumping of a relativistic ion beam

S. A. Bogacz and J. B. Ketterson

Appl. Phys. Lett. 49, 311 (1986); http://dx.doi.org/10.1063/1.97152 (3 pages)

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The level population of a beam of relativistic positive ions with Z≥2 having a single bound electron may be inverted by the application of a ‘‘π pulse’’ of laser radiation tuned to the Doppler‐shifted 1s–2p transition. When the laser beam and ion beam move in opposite directions, the required laser frequency is reduced by a factor 2γ. Subsequently applied short wavelength resonant radiation moving in the same direction as the ion beam (with an inverted population) will be amplified via stimulated emission, the wavelength in the lab frame now being shorter than the original laser wavelength by a factor (2γ)2.
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42.55.-f Lasers

Surface‐emitting second order distributed Bragg reflector laser with dynamic wavelength stabilization and far‐field angle of 0.25°

G. A. Evans, J. M. Hammer, N. W. Carlson, F. R. Elia, E. A. James, and J. B. Kirk

Appl. Phys. Lett. 49, 314 (1986); http://dx.doi.org/10.1063/1.97153 (2 pages) | Cited 26 times

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Operation of a dynamically stabilized surface‐emitting AlGaAs channeled‐substrate‐planar large‐optical‐cavity distributed Bragg reflector laser with a 0.25°×8° far‐field pattern is reported. With 50% duty cycle and 50 ns–2 ms pulse length operation at room temperature, thresholds as low as 150 mA were obtained. No side modes were observed to 40 dB below the principal wavelength intensity under 100% modulation depth operation.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.-m Integrated optics
42.55.Px Semiconductor lasers; laser diodes

Solid phase epitaxial regrowth of ion‐implanted amorphized InP

C. Licoppe, Y. I. Nissim, P. Krauz, and P. Henoc

Appl. Phys. Lett. 49, 316 (1986); http://dx.doi.org/10.1063/1.97154 (3 pages) | Cited 14 times

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Solid phase epitaxial regrowth of implanted amorphous InP layers is shown to occur in the temperature range 230–330 °C. It leads to defective monocrystalline layers. The kinetics of growth follow an activation law with activation energy Ea=1.55 eV±0.2 eV. Roughening of the amorphous/crystalline interface occurs during growth. The dependence of interface roughening on crystal orientation is studied. In all cases, it is shown that the interface is degraded much faster than in GaAs. The comparison between the two compound semiconductors is based on chemical disorder in the amorphized layer.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Rh Phase transitions and critical phenomena

Growth of rare‐earth single crystals by molecular beam epitaxy: The epitaxial relationship between hcp rare earth and bcc niobium

J. Kwo, M. Hong, and S. Nakahara

Appl. Phys. Lett. 49, 319 (1986); http://dx.doi.org/10.1063/1.97155 (3 pages) | Cited 45 times

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High‐quality rare‐earth (RE) single‐crystal films of yttrium (Y) and gadolinium (Gd) were successfully grown with the metal molecular beam epitaxy technique on a bcc Nb single‐crystal film which serves as a buffer layer to the sapphire substrates. With reflection high‐energy electron diffraction, the hcp RE (0001) was found to grow epitaxially on the (110) Nb in the Nishiyama–Wasserman orientation. The regrowth of Nb on this RE (0001) surface yielded the (110) orientation with 120° in‐plane domains. These epitaxial relationships suggest the possibility of fabricating an ultrathin, coherent crystalline superlattice in the Nb (110)/ RE (0001) system.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

High performance Ga0.47In0.53As photoconductive detectors grown by chemical beam epitaxy

A. Antreasyan and W. T. Tsang

Appl. Phys. Lett. 49, 322 (1986); http://dx.doi.org/10.1063/1.97618 (3 pages) | Cited 6 times

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We have fabricated highly sensitive, planar, interdigitated photoconductive detectors on undoped Ga0.47In0.53As that is grown lattice matched on a semi‐insulating InP substrate by chemical beam epitaxy. The devices exhibit intensity‐dependent gains as high as 7000, gain‐bandwidth products of 20 GHz, detectivities as large as 1012 cm Hz1/2 W−1 at 300 K, and responsivities close to 3000 A/W at λ=1.3 μm. These results are similar to the highest performance characteristics obtained with Ga0.47In0.53As photoconductive detectors that are grown by well established techniques.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
72.40.+w Photoconduction and photovoltaic effects

Characterization of InGaAsP surface corrugation used for distributed feedback lasers by means of Raman spectroscopy

Minoru Kubo, Keisuke Koga, Mototsugu Ogura, and Shigemi Kohiki

Appl. Phys. Lett. 49, 325 (1986); http://dx.doi.org/10.1063/1.97156 (3 pages) | Cited 2 times

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Thermally deformed surface corrugations on both an InP substrate and an InGaAsP layer have been analyzed by means of x‐ray photoelectron spectroscopy and laser Raman spectroscopy. From the spectra of the deformed surface corrugations on an InP substrate on which a GaAs wafer was placed during its heat treatment, it has been found that material formed in the grooves is an InGaAsP alloy single crystal.
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81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)
42.55.Px Semiconductor lasers; laser diodes
78.30.Hv Other nonmetallic inorganics

Thickness‐dependent void fraction of rf‐sputtered amorphous Ge films by spectroscopic ellipsometry

P. J. McMarr, J. R. Blanco, K. Vedam, R. Messier, and L. Pilione

Appl. Phys. Lett. 49, 328 (1986); http://dx.doi.org/10.1063/1.97157 (3 pages) | Cited 15 times

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In this letter it is shown that vapor deposited thin films prepared under conditions of low adatom mobility, such as amorphous Ge films in the present study, exhibit a nonlinear decrease in void fraction, and hence an increase in density with increasing film thickness. Fractal modeling of the internal void network structure in this class of vapor deposited films shows that the void boundaries define the surfaces of growth cones and these voids are, in general, not expected to be distributed uniformly with film thickness.
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68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Study of the low‐temperature line broadening mechanisms for excitonic transitions in GaAs/AlGaAs modulator structures

S. Hong and Jasprit Singh

Appl. Phys. Lett. 49, 331 (1986); http://dx.doi.org/10.1063/1.97158 (3 pages) | Cited 18 times

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We examine the dominant line broadening mechanisms for excitonic lines in a quantum well in the presence of strong transverse electric fields. We have calculated the line broadening due to interface roughness effects and lifetime broadening effects. We find that the line broadening effects due to interface roughness increase rapidly as the transverse electric field is increased and for a 100‐Å Al0.3Ga0.7As/GaAs well, increase by a factor of ∼2.0 as the field is increased from 0 to 100 kV/cm. The broadening due to lifetime effects is very sensitive to the band lineup assumed and is much smaller than interface roughness effects even for one monolayer interface roughness.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.35.-y Excitons and related phenomena
68.35.Gy Mechanical properties; surface strains
78.40.Fy Semiconductors

Behavior of inversion layers in 3C silicon carbide

R. E. Avila, J. J. Kopanski, and C. D. Fung

Appl. Phys. Lett. 49, 334 (1986); http://dx.doi.org/10.1063/1.97159 (3 pages) | Cited 23 times

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A study on the field‐induced surface‐charge region in 3C silicon carbide (SiC) using 1 MHz capacitance‐voltage (C‐V) measurements at room temperature is here reported. A double column mercury probe was used on oxidized SiC substrates to form metal‐oxide‐semiconductor (MOS) structures. These structures were characterized in terms of the substrate doping profile, effective fixed oxide charge, and interface trap density. A distinctive feature of the MOS C‐V curves from accumulation to inversion is that after going into deep depletion the capacitance rises to its equilibrium inversion level during the voltage sweep. Capacitance transient measurements indicate that the minority‐carrier generation occurs at the SiO2/SiC interface.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Calibration of the carbon localized vibrational mode absorption line in GaAs

M. R. Brozel, E. J. Foulkes, R. W. Series, and D. T. J. Hurle

Appl. Phys. Lett. 49, 337 (1986); http://dx.doi.org/10.1063/1.97160 (3 pages) | Cited 23 times

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The residual carbon acceptor concentration [CAs] in three radio‐tin‐doped, liquid encapsulated Czochralski, GaAs single crystals was estimated from a plot of carrier concentration versus tin concentration determined by radio‐tracer counting. Local vibrational mode absorption of CAs in the samples was measured at room temperature and a calibration factor of 8±2×1015 cm−1 obtained. A comparison of this with other determinations suggests that the true calibration factor lies between 8 and 11×1015 cm−1 and that earlier, larger calibration factors should be discounted.
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82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
78.30.Hv Other nonmetallic inorganics

InP metal‐semiconductor field‐effect transistors with mercury and cadmium gates

L. G. Meiners, A. R. Clawson, and R. Nguyen

Appl. Phys. Lett. 49, 340 (1986); http://dx.doi.org/10.1063/1.97161 (2 pages) | Cited 3 times

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Depletion‐type InP field‐effect transistors have been constructed employing metal‐semiconductor junctions between both mercury and InP and cadmium and InP as the blocking electrodes. The barrier height (0.6–0.7 eV) that can be obtained between electroplated Cd and InP is sufficiently large to give negligibly small (J<10−4 A/cm2) gate current densities at reverse bias voltages of 10 V. Although probably not of much technological usefulness, the Hg gate InP metal‐semiconductor field‐effect transistor is interesting because the large Schottky barrier height between Hg and n‐InP (∼0.9 eV) permits the fabrication of devices for the nondestructive profiling of the mobility and carrier concentration in thin epitaxial layers of InP.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Electron mobility and velocity in compensated GaAs

Jingming Xu, Bruce A. Bernhardt, Michael Shur, Chung‐Hsu Chen, and Andrzej Peczalski

Appl. Phys. Lett. 49, 342 (1986); http://dx.doi.org/10.1063/1.97162 (3 pages) | Cited 17 times

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We present the results of a Monte Carlo calculation of the electron velocity and mobility, as well as mobility measurements in compensated GaAs. For appreciable compensation ratios, the peak velocity, negative differential mobility, and peak‐to‐valley velocity ratios are drastically reduced in comparison with those in uncompensated GaAs. This reduction makes the Gunn effect less likely to manifest itself in ion‐implanted GaAs metal‐semiconductor field‐effect transistors and other GaAs devices where compensation is important.
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72.20.Fr Low-field transport and mobility; piezoresistance
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Ga2O3: The origin of growth‐induced oval defects in GaAs molecular beam epitaxy

Shang‐Lin Weng

Appl. Phys. Lett. 49, 345 (1986); http://dx.doi.org/10.1063/1.97163 (3 pages) | Cited 11 times

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Based on thermodynamic and other quantitative results, we show that the formation of growth‐induced oval defects in GaAs molecular beam epitaxy originates from the decomposition of Ga2O3 in the Ga melt and the subsequent evaporation of the resultant suboxide Ga2O molecules. After landing on the epilayer surface, these suboxide species most likely combine to form Ga2O3 plus Ga atoms which then act as nucleation centers for the formation of oval defects.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.60.Nh Thermodynamics of nucleation

Interface traps and Pb centers in oxidized (100) silicon wafers

Gary J. Gerardi, Edward H. Poindexter, Philip J. Caplan, and Noble M. Johnson

Appl. Phys. Lett. 49, 348 (1986); http://dx.doi.org/10.1063/1.97611 (3 pages) | Cited 145 times

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The band‐gap energy distribution of Pb centers on oxidized (100) Si wafers has been determined and compared with interface electrical trap density Dit. Two different Pb centers are observed on (100) Si: Pb0, which has the structure ⋅Si≡Si3, and is essentially identical to the sole Pb center observed on (111) Si; and Pb1, of presently uncertain identity, but clearly different in nature from Pb0. By electric field‐controlled electron paramagnetic resonance (EPR) and capacitance‐voltage (C‐V) measurements, it is found that Pb0 has its (0↔1) electron transition at Ev+0.3 eV and its (1↔2) transition at Ev+0.85 eV. Similarly, Pb1 has its (0↔1) transition at Ev+0.45 eV and its (1↔2) transition at Ev+0.8 eV. The Pb band‐gap density correlates qualitatively and quantitatively with the electrical trap density Dit from C‐V analysis; nonbonded Pb orbitals are found to be the source of about 50% of the characteristic traps in dry‐oxidized, unannealed (100) Si wafers.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
76.30.Mi Color centers and other defects
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Surface state density distribution at an Al2O3‐InP metal‐insulator‐semiconductor field‐effect transistor measured by the charge pumping technique

Takeshi Kobayashi, Tohru Ichikawa, and Tetsurou Sawai

Appl. Phys. Lett. 49, 351 (1986); http://dx.doi.org/10.1063/1.97612 (3 pages) | Cited 2 times

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The surface state density distribution Nss at an InP‐Al2O3 interface beneath the gate electrode was obtained by applying the charge pumping measurement technique to the n‐channel inversion‐mode Al2O3‐InP metal‐insulator‐semiconductor field‐effect transistors. The observed Nss versus energy curve was U shaped spreading over the energy between the conduction‐band edge and 1 eV above the valence‐band edge. The result was in good agreement with that obtained from the capacitance‐voltage curves of the metal‐insulator‐semiconductor diode by the Terman method.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces
85.30.Tv Field effect devices

Chemical and electronic structure of InSb‐CdTe interfaces

K. J. Mackey, P. M. G. Allen, W. G. Herrenden‐Harker, R. H. Williams, C. R. Whitehouse, and G. M. Williams

Appl. Phys. Lett. 49, 354 (1986); http://dx.doi.org/10.1063/1.97585 (3 pages) | Cited 31 times

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The microscopic interactions at heterojunctions formed between cleaned surfaces of InSb and CdTe have been investigated by low‐energy electron diffraction and soft x‐ray photoelectron spectroscopy. Layers of CdTe have been deposited on 1×1 (110) cleaved InSb and on c(2×8) (100) sputter cleaned and annealed surfaces, for various substrate temperatures. The valence‐band offset has been measured and compared with theoretical predictions for layers deposited on room‐temperature substrates. For layers deposited onto substrates at elevated temperatures typical of those employed in molecular beam epitaxial growth, the interface is complex and consists of a region rich in indium and tellurium, presumed to be indium telluride. The thickness of this layer is temperature dependent and may be several tens of angstroms.
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68.35.Fx Diffusion; interface formation
68.35.Dv Composition, segregation; defects and impurities
68.55.-a Thin film structure and morphology
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

High‐speed electrical sampling by fs photoemission

R. B. Marcus, Andrew M. Weiner, Joseph H. Abeles, and Paul S. D. Lin

Appl. Phys. Lett. 49, 357 (1986); http://dx.doi.org/10.1063/1.97586 (3 pages) | Cited 15 times

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We propose and demonstrate a new method for contactless sampling of high‐speed electrical signals, by spectral analysis of photoelectrons emitted when a signal‐carrying conductor is illuminated by ultrashort light pulses. We present time‐resolved measurements of sub‐ns electrical signals on a gold transmission line on GaAs using three‐photon photoemission induced by 80 fs visible laser pulses, and we discuss the temporal resolution of these measurements. This method is applicable to devices and circuits on any semiconductor.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
07.50.-e Electrical and electronic instruments and components
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
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