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18 Aug 1986

Volume 49, Issue 7, pp. 363-424


Gain measurements near 351 nm in 3He/Xe/NF3 mixtures excited by fragments from the 3He(n, p) 3H reaction

G. N. Hays, D. A. McArthur, D. R. Neal, and J. K. Rice

Appl. Phys. Lett. 49, 363 (1986); http://dx.doi.org/10.1063/1.97587 (3 pages) | Cited 8 times

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We report direct gain measurements on the 351‐nm XeF(B–X) transition in mixtures of 3He/Xe/NF3, pumped with moderated neutrons produced in a fast‐burst reactor. The peak small‐signal gain was 0.7%/cm at a deposited power of 5 kW/cc in the gas.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Long cavity ridge waveguide AlGaAs/GaAs distributed feedback lasers for spectral linewidth reduction

Keisuke Kojima, Susumu Noda, Shuichi Tai, Kazuo Kyuma, Koichi Hamanaki, and Takashi Nakayama

Appl. Phys. Lett. 49, 366 (1986); http://dx.doi.org/10.1063/1.97588 (3 pages) | Cited 10 times

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Ridge waveguide AlGaAs/GaAs distributed feedback lasers with the cavity length of 820 μm were fabricated. The differential quantum efficiency was as high as 28%, and the power‐dependent linewidth was more than an order of magnitude smaller than that of the 290 μm laser, which agrees with theory. The narrowest linewidth was 12 MHz at 6.2 mW.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Low‐threshold solar‐pumped laser using C2F5I

R. J. De Young and W. R. Weaver

Appl. Phys. Lett. 49, 369 (1986); http://dx.doi.org/10.1063/1.97589 (2 pages) | Cited 4 times

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Solar‐pumped lasing was achieved with pentafluoroethyl iodide, C2F5I, a new alkyl‐iodide. Output power and energy of 350 mW and 45 mJ were achieved. This lasant was found to have the lowest lasing threshold of any solar‐pumped gas laser to date at approximately 100 solar constants. Such low threshold enables the use in space of simple, trough solar collectors.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.55.-f Lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Measurements of the nonradiative states of optically illuminated semiconductors by a superconducting tunnel junction

I. Iguchi and Y. Kasai

Appl. Phys. Lett. 49, 371 (1986); http://dx.doi.org/10.1063/1.97590 (3 pages) | Cited 1 time

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A novel technique which utilizes a superconducting tunnel junction as a phonon detector is introduced to detect nonequilibrium phonons from the nonradiative states in optically illuminated semiconductors such as Si or GaAs. The method proved to have very high sensitivity for phonon detection with a large S/N ratio. The detected phonon signal as a function of wavelength of the light for GaAs exhibited modulated structures below the band‐gap energy consistent with the presence of an EL2 level.
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78.40.Fy Semiconductors
43.35.Gk Phonons in crystal lattices, quantum acoustics
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
85.25.-j Superconducting devices

Noncontact detection of surface‐breaking cracks using a laser acoustic source and an electromagnetic acoustic receiver

R. J. Dewhurst, C. Edwards, and S. B. Palmer

Appl. Phys. Lett. 49, 374 (1986); http://dx.doi.org/10.1063/1.97591 (3 pages) | Cited 12 times

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An electromagnetic acoustic transducer (EMAT) is used to detect laser generated surface acoustic transients. The surface acoustic waves are broadband and can be used to detect and size surface‐breaking cracks if used in conjunction with a broadband detector. We describe a broadband EMAT and demonstrate first that it can be used to locate artificial surface‐breaking defects in both aluminum and steel. A second study reveals that it can also be used for the detection of real surface‐breaking cracks, even on rusty steel surfaces.
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43.38.Dv Electromagnetic and electrodynamic transducers
43.35.Pt Surface waves in solids and liquids
81.70.-q Methods of materials testing and analysis
62.20.Qp Friction, tribology, and hardness

Absolutely measured x‐ray spectra from laser plasmas with targets of different elements

K. Eidmann and T. Kishimoto

Appl. Phys. Lett. 49, 377 (1986); http://dx.doi.org/10.1063/1.97592 (2 pages) | Cited 42 times

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Soft x‐ray spectra emitted by laser‐produced plasmas in the wavelength range 10 Å<λ<250 Å were absolutely measured with a transmission grating and calibrated Kodak 101‐01 film. Laser pulses with a length of 3 ns and a wavelength of 0.53 μm were focused at an intensity of 3×1013 W/cm2 on planar targets of various elements with atomic numbers ranging from 4 to 82. The overall conversion of incident laser energy into x‐ray energy increases from 2% for Be to nearly 50% for the heaviest elements.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
32.30.Rj X-ray spectra

Evidence for oxygen bubbles in subsurface Al2O3 layers formed in aluminum by oxygen implantation

R. G. Musket, D. W. Brown, and R. F. Pinizzotto

Appl. Phys. Lett. 49, 379 (1986); http://dx.doi.org/10.1063/1.97593 (3 pages) | Cited 3 times

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In an earlier paper [R. G. Musket, D. W. Brown, and H. C. Hayden, Nucl. Instrum. Methods B 7/8, 31 (1985)] we showed that high‐dose oxygen ion implantation into bulk aluminum results in the formation of subsurface layers of Al2O3. However, for oxygen doses exceeding that required for oxidation of all the locally available aluminum atoms, the implanted layer contained excess oxygen with the ratio O/Al reaching 3.2. At that time we proposed that excess oxygen was trapped physically at point defects and/or microviods (i.e., bubbles). We have now examined these implanted layers using cross‐sectional transmission electron microscopy and cross‐sectional scanning electron microscopy. Both of these techniques have provided clear evidence for the existence of 20–100 nm oxygen bubbles. Combining these results with those from Rutherford backscattering and conventional transmission electron microscopy has led to a more complete understanding of the formation process.
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61.80.Jh Ion radiation effects
61.72.up Other materials
81.05.Bx Metals, semimetals, and alloys
61.72.Qq Microscopic defects (voids, inclusions, etc.)

Morphological effects during low pressure chemical vapor deposition and annealing of undoped polycrystalline silicon layers

A. Brokman, R. Gat, and Y. Alpern

Appl. Phys. Lett. 49, 382 (1986); http://dx.doi.org/10.1063/1.97594 (3 pages) | Cited 12 times

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The microstructure of low pressure chemical vapor deposited silicon layers is investigated during and after annealing. The crystallization of deposited amorphous layers is controlled by microtwins, which are generated during the nucleation stage, and yields the final morphology of elongated grains. Recrystallization and growth of the deposited polycrystalline layers involve twin coarsening which causes the final morphology of regular equiaxed grains.
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68.55.-a Thin film structure and morphology
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.65.-b Surface treatments
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Vacancy defects in as‐grown and neutron irradiated GaP studied by positrons

G. Dlubek, O. Brümmer, and A. Polity

Appl. Phys. Lett. 49, 385 (1986); http://dx.doi.org/10.1063/1.97595 (3 pages) | Cited 21 times

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Positron lifetime and Doppler‐broadening measurements have been used to study vacancy defects in n‐type GaP. Vacancies in the P sublattice with a concentration of some 1017 cm−3 were observed in as‐grwon GaP. The vacancies disappear during annealing at 500–800 °C. In neutron‐irradiated GaP positrons are trapped by Ga vacancies which anneal out in two stages situated at 300–550 °C and 550–700 °C.
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61.80.Hg Neutron radiation effects
61.72.jd Vacancies
61.72.jj Interstitials
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Epitaxial growth of 3C‐SiC on Si by low‐pressure chemical vapor deposition

Y. Fujiwara, E. Sakuma, S. Misawa, K. Endo, and S. Yoshida

Appl. Phys. Lett. 49, 388 (1986); http://dx.doi.org/10.1063/1.97596 (3 pages) | Cited 20 times

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3C‐SiC was grown on Si(100) substrates by low‐pressure chemical vapor deposition using a C3H8‐SiH4‐H2 reaction gas system in the pressure range between 1.5 and 100 Torr. The dependences of the crystal structures, growth rates, thickness distributions, and electrical properties of the SiC layers on growth conditions were investigated. At low pressure, it was found that the thickness uniformity was improved, especially at 1.5 Torr compared to atmospheric pressure. The epitaxially grown 3C‐SiC layers at 100 Torr have smooth surfaces and high crystalline quality and showed almost the same electrical properties as those of the epilayers by atmospheric pressure chemical vapor deposition.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Reduction of the acceptor impurity background in GaAs grown by molecular beam epitaxy

E. C. Larkins, E. S. Hellman, D. G. Schlom, J. S. Harris, M. H. Kim, and G. E. Stillman

Appl. Phys. Lett. 49, 391 (1986); http://dx.doi.org/10.1063/1.97597 (3 pages) | Cited 10 times

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We report very high purity, unintentionally doped n‐type GaAs with the lowest acceptor background of all reported molecular beam epitaxy (MBE) GaAs layers. The residual acceptor concentration is 2.4×1013 cm−3 and the residual donor concentration is 1.5×1014 cm−3, yielding a compensation ratio of Na/Nd=0.160. The measured Hall mobility is 163 000 cm2/V s at 77 K with a peak value of 216 000 cm2/V s at 45.9 K. The limitations of the Hall mobility at 77 K as a figure of merit are discussed and more accurate figures of merit are considered. The initial preparation of the MBE system and the growth conditions leading to the reduced incorporation of acceptor impurities are also presented.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.My Galvanomagnetic and other magnetotransport effects

Effect of hydrogen plasma treatment on transparent conducting oxides

S. Major, Satyendra Kumar, M. Bhatnagar, and K. L. Chopra

Appl. Phys. Lett. 49, 394 (1986); http://dx.doi.org/10.1063/1.97598 (3 pages) | Cited 184 times

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The effect of hydrogen plasma treatment on indium tin oxide (ITO), fluorine‐doped tin oxide (FTO), and indium‐doped zinc oxide (IZO) films has been studied. X‐ray photoelectron spectroscopy analysis shows that ITO and FTO surfaces get reduced to yield elemental indium and tin, respectively. Annealing of the plasma treated films in air leads to re‐oxidation of the reduced surface and the electro‐optical properties are recovered. In contrast, IZO films are not reduced by plasma treatment and show no changes in the electrical and optical properties. The surface of plasma treated IZO films shows a higher binding energy O(1s) peak probably due to OH or OH...O species which appear to form a protective layer against plasma degradation.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
81.65.-b Surface treatments
81.40.Tv Optical and dielectric properties related to treatment conditions
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Lateral solid phase epitaxy of Si over SiO2 patterns and its application to silicon‐on‐insulator transistors

Masayoshi Sasaki, Teruo Katoh, Hiroshi Onoda, and Norio Hirashita

Appl. Phys. Lett. 49, 397 (1986); http://dx.doi.org/10.1063/1.97599 (3 pages) | Cited 14 times

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Lateral solid phase epitaxy (L‐SPE) of vacuum deposited amorphous Si over SiO2 patterns for various substrate orientation and growth direction has been investigated and applied to fabrication of thin‐film transistors on SiO2. It has been confirmed that the L‐SPE growth length depends strongly on both substrate orientation and growth direction. The maximum growth length of about 7 μm has been obtained in the L‐SPE toward 〈100〉 direction on a (001) substrate. n‐channel and p‐channel transistors on the L‐SPE layer have been developed and successfully fabricated for the first time. Channel mobilities of 380 cm2/V s for n‐channel transistors and 150 cm2/V s for p‐channel transistors have been obtained.
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81.15.Np Solid phase epitaxy; growth from solid phases
85.30.Tv Field effect devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Low threshold, high T0 InGaAsP/InP 1.3 μm lasers grown on p‐type InP substrates

T. C. Hasenberg and E. Garmire

Appl. Phys. Lett. 49, 400 (1986); http://dx.doi.org/10.1063/1.97600 (3 pages)

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InGaAsP lasers have typically exhibited an undesirably sensitive temperature dependence of threshold current. In this letter we propose and demonstrate a new epitaxial layer structure, utilizing two identical active regions grown on a p‐type substrate, which overcomes this problem through improved carrier confinement. By growing both active regions with the same liquid phase epitaxial melt, low threshold (2–2.5 kA/cm2) and high T0 (106–180 K) have been achieved for the first time in gain‐guided 1.3 μm lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Tungsten deposition on porous silicon for formation of buried conductors in single crystal silicon

S. S. Tsao, R. S. Blewer, and J. Y. Tsao

Appl. Phys. Lett. 49, 403 (1986); http://dx.doi.org/10.1063/1.97601 (3 pages) | Cited 5 times

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We report measurements of the kinetics of tungsten metallization of porous silicon layers for the formation of buried conductors under single crystal silicon. The kinetics depend markedly on the partial pressure of the source gas and on the degree of porosity, in agreement with a proposed model in which the rate‐limiting step is diffusion of WF6 source gas through the narrow pore channels. Preliminary results are presented of the full isolation of silicon islands by buried metal.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Photoexcited transport in GaAs/AlAs quantum wells

R. T. Collins, K. v. Klitzing, and K. Ploog

Appl. Phys. Lett. 49, 406 (1986); http://dx.doi.org/10.1063/1.97602 (3 pages) | Cited 13 times

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We present the results of a study of the transport of optically excited carriers perpendicular to weakly coupled GaAs/AlAs multiple quantum wells imbedded in the depletion region of a p‐i‐n photodiode. At temperatures above 120 K the photocurrent was thermally activated. For lower temperatures the photocurrent decreased as temperature was increased. Wavelength‐dependent negative differential resistance regions were present in the reverse bias region of the photoexcited current voltage (I‐V) curve as a result of the Stark shifts of the lowest energy heavy hole (h1) and light hole (l1) excitons. Additional wavelength independent structure was also visible in the photoexcited I‐V curves.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.20.Jq Electro-optical effects
72.40.+w Photoconduction and photovoltaic effects
85.60.Dw Photodiodes; phototransistors; photoresistors

Experimental relation between cut‐off wavelength and HgTe layer thickness for HgTe‐CdTe superlattices

J. Reno and J. P. Faurie

Appl. Phys. Lett. 49, 409 (1986); http://dx.doi.org/10.1063/1.97603 (2 pages) | Cited 12 times

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An experimental curve of room‐temperature cut‐off wavelength versus HgTe layer thickness for HgTe‐CdTe superlattices is presented for the first time, along with an experimental equation relating the two. The equation is used to show that the variation in the cut‐off wavelength for HgTe‐CdTe superlattices is less than for HgCdTe alloy when the cut‐off wavelength is greater than 2.0 μm.
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75.20.Ck Nonmetals
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology
78.30.Hv Other nonmetallic inorganics

High quality zinc sulfide epitaxial layers grown on (100) silicon by molecular beam epitaxy

Meiso Yokoyama, Ko‐ichi Kashiro, and Shin‐ichi Ohta

Appl. Phys. Lett. 49, 411 (1986); http://dx.doi.org/10.1063/1.97604 (2 pages) | Cited 8 times

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ZnS films were successfully grown by molecular beam epitaxy on (100) Si substrates. These high quality films, grown at a substrate temperature of 340 °C with a molecular beam flux ratio of Zn to S of unity, exhibited high crystallographic quality and revealed a flat surface. Secondary ion mass spectroscopic analysis showed that the film contained little impurity. In photoluminescence, a broad peak was observed at 2.6 eV at room temperature while an additional sharp peak at 3.6 eV appeared at 77 K. The latter is considered to be band‐to‐band emission and the former may be due to the Cu‐blue emission.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.40.Fy Semiconductors
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Superconductivity of Nb films recovered from megabar dynamic pressures

W. J. Nellis, H. B. Radousky, T. H. Geballe, R. H. Hammond, R. Koch, and G. W. Hull

Appl. Phys. Lett. 49, 413 (1986); http://dx.doi.org/10.1063/1.97605 (3 pages) | Cited 2 times

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Niobium films 30 μm thick have been recovered successfully from Mbar dynamic pressures and their superconducting properties have been measured. These results demonstrate the feasibility of subjecting films to Mbar dynamic pressure for the potential synthesis of novel, metastable materials.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
74.25.-q Properties of superconductors
62.50.-p High-pressure effects in solids and liquids
81.05.Bx Metals, semimetals, and alloys

Superconducting NbNxCy thin films fabricated with a dual ion‐beam sputtering method

L.‐J. Lin and D. E. Prober

Appl. Phys. Lett. 49, 416 (1986); http://dx.doi.org/10.1063/1.97606 (3 pages) | Cited 5 times

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We have fabricated refractory superconducting NbNxCy thin films on unheated Si substrates with a low‐energy dual ion‐beam sputtering technique. Films fabricated with this technique have predominantly B1 crystal structure with maximum Tc ∼13.2 K, resistivity of 80–150 μΩ cm and residual resistance ratio ∼1.0. The use of low ion‐beam energies and the absence of substrate heating make this method well suited for producing NbNxCy films for superconducting microelectronic applications.
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
74.25.-q Properties of superconductors
74.78.-w Superconducting films and low-dimensional structures

Lorentz microscopy of micron‐sized laser‐written magnetic domains in TbFe

J. C. Suits, R. H. Geiss, C. J. Lin, D. Rugar, and A. E. Bell

Appl. Phys. Lett. 49, 419 (1986); http://dx.doi.org/10.1063/1.97607 (3 pages) | Cited 20 times

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High resolution images of laser‐written magnetic domains in thin sputtered films of terbium iron have been obtained using Lorentz microscopy. The domains, written with a GaAs diode laser, are generally circular in shape with diameters in the range 0.9–2.2 μm. Conditions necessary for the observation of highly detailed images are described. It was found that with certain values of laser power and applied magnetic field, smaller irregular domains appear within the principal domains.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
78.20.Ls Magneto-optical effects
75.50.Kj Amorphous and quasicrystalline magnetic materials
85.70.Sq Magnetooptical devices

Electron beam evaporation of oriented Nb films onto GaAs crystals in ultrahigh vacuum

M. Eizenberg, D. A. Smith, M. Heiblum, and Armin Segmüller

Appl. Phys. Lett. 49, 422 (1986); http://dx.doi.org/10.1063/1.97608 (3 pages) | Cited 9 times

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Thin layers of Nb, 100–400 Å thick, were grown by electron beam evaporation on (100)GaAs substrates in a molecular beam epitaxy system. The crystallographic relationship between deposit and substrate was monitored in situ by reflection high‐energy electron diffraction, and after deposition by transmission electron microscopy and grazing‐incidence x‐ray diffraction. In spite of the large lattice mismatch (17%) and the low deposition temperature (40–400 °C), a quite well oriented deposit with the orientation (100)Nb∥(100)GaAs and [001]Nb∥[011]GaAs was obtained for a substrate temperature of ∼170 °C. Changing the substrate temperature from the optimum value of ∼170 °C in either direction resulted in a gradual deterioration of the epitaxy.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
79.20.Kz Other electron-impact emission phenomena
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