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Applied Physics Letters / Volume 49 / Issue 7

Appl. Phys. Lett. 49, 391 (1986); http://dx.doi.org/10.1063/1.97597 (3 pages)

Reduction of the acceptor impurity background in GaAs grown by molecular beam epitaxy

E. C. Larkins1, E. S. Hellman1, D. G. Schlom1, J. S. Harris1, M. H. Kim2, and G. E. Stillman2

1Solid State Electronics Laboratory, Stanford University, Stanford, California 94305
2Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana–Champaign, Urbana, Illinois 01801

(Received 19 May 1986; accepted 23 June 1986)

We report very high purity, unintentionally doped n‐type GaAs with the lowest acceptor background of all reported molecular beam epitaxy (MBE) GaAs layers. The residual acceptor concentration is 2.4×1013 cm−3 and the residual donor concentration is 1.5×1014 cm−3, yielding a compensation ratio of Na/Nd=0.160. The measured Hall mobility is 163 000 cm2/V s at 77 K with a peak value of 216 000 cm2/V s at 45.9 K. The limitations of the Hall mobility at 77 K as a figure of merit are discussed and more accurate figures of merit are considered. The initial preparation of the MBE system and the growth conditions leading to the reduced incorporation of acceptor impurities are also presented.

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KEYWORDS and PACS

Keywords

GALLIUM ARSENIDES, MOLECULAR BEAM EPITAXY, HALL EFFECT, ACCEPTORS, DONORS, IMPURITIES, ELECTRON MOBILITY

PACS

  • 61.72.sd

    Impurity concentration

  • 61.72.sh

    Impurity distribution

  • 61.72.sm

    Impurity gradients

  • 72.20.Fr

    Low-field transport and mobility; piezoresistance

  • 72.20.My

    Galvanomagnetic and other magnetotransport effects

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.97597

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    C. M. Wolfe, G. E. Stillman, and W. T. Lindley, J. Appl. Phys. 41, 3088 (1970JAPIAU000041000007003088000001).

    B. J. Skromme, S. S. Bose, B. Lee, T. S. Low, T. R. Lepkowski, R. Y. DeJule, G. E. Stillman, and J. C. M. Hwang, J. Appl. Phys. 58, 4685 (1985JAPIAU000058000012004685000001).


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