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25 Aug 1986

Volume 49, Issue 8, pp. 427-479


Phase measurement of laser diode array radiation

J. Yaeli

Appl. Phys. Lett. 49, 427 (1986); http://dx.doi.org/10.1063/1.97609 (3 pages) | Cited 3 times

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The phase of either near‐field or far‐field distribution function of laser diode arrays can be measured by using the technique of shearing interferometry. Two generations of shearing interferometers are described and typical results using them are shown. For one gain‐guided laser array the phase of the near‐field distribution is shown to be a periodic function whose period is twice the distance between stripes. An example of phase measurement of the far‐field distribution is shown.
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07.60.Ly Interferometers
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

High‐speed, hybrid InGaAs p‐i‐n/photoconductor circuit

P. M. Downey, J. E. Bowers, C. A. Burrus, F. Mitschke, and L. F. Mollenauer

Appl. Phys. Lett. 49, 430 (1986); http://dx.doi.org/10.1063/1.97610 (2 pages) | Cited 5 times

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A miniature coax circuit incorporating a sensitive InGaAs p‐i‐n and a picosecond photoconductor is described. This circuit is capable of detecting 0.1 fJ infrared pulses with a time resolution of 12 ps.
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85.60.Dw Photodiodes; phototransistors; photoresistors
06.60.Jn High-speed techniques (microsecond to femtosecond)
07.50.Ek Circuits and circuit components
85.60.Gz Photodetectors (including infrared and CCD detectors)

New measurement technique: cw electro‐optic probing of electric fields

Z. H. Zhu, J‐P. Weber, S. Y. Wang, and S. Wang

Appl. Phys. Lett. 49, 432 (1986); http://dx.doi.org/10.1063/1.97636 (3 pages) | Cited 10 times

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This letter describes a new nondestructive measurement technique—cw electro‐optic probing, and reports results of experiments on GaAs coplanar waveguide sample. The technique is simple in instrumentation and convenient in applications. We believe that it can become a powerful tool for studying the electric field in various devices and integrated circuits.
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07.50.-e Electrical and electronic instruments and components
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
84.40.Az Waveguides, transmission lines, striplines

Gaussian beam excitation of TE0 nonlinear guided waves

E. M. Wright, G. I. Stegeman, C. T. Seaton, and J. V. Moloney

Appl. Phys. Lett. 49, 435 (1986); http://dx.doi.org/10.1063/1.97134 (2 pages) | Cited 14 times

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Selective, efficient excitation of TE0 nonlinear guided waves is demonstrated numerically. For a thin film bounded by two self‐focusing media, three different field distributions corresponding to the same flux level can be excited independently by suitable Gaussian input beams.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Nonradiative transition dynamics in alexandrite

S. K. Gayen, W. B. Wang, V. Petričević, and R. R. Alfano

Appl. Phys. Lett. 49, 437 (1986); http://dx.doi.org/10.1063/1.97135 (3 pages) | Cited 14 times

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The first direct picosecond time‐resolved measurement of the nonradiative transition dynamics between the excited 4T2 pump band and the metastable 2E storage level of the trivalent chromium ion in alexandrite is reported. The nonradiative relaxation times of 17 ps for intra‐4T2 vibrational transitions, and 27 ps for 4T2→2E electronic transition are obtained. The thermal repopulation rate of the 4T2 state from the metastable 2E level is of the order 3.5×109 s−1.
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78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
33.50.Hv Radiationless transitions, quenching
06.60.Jn High-speed techniques (microsecond to femtosecond)
42.55.Rz Doped-insulator lasers and other solid state lasers

Phase‐locked arrays of unstable resonator semiconductor lasers

J. Salzman and A. Yariv

Appl. Phys. Lett. 49, 440 (1986); http://dx.doi.org/10.1063/1.97108 (3 pages) | Cited 2 times

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A phase‐locked array of several unstable resonator semiconductor lasers is demonstrated. Single lateral mode was obtained for currents I<2.5Ith, and partial spatial coherence for I≤5Ith, with an optical output power of 0.95 W.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Application of Z‐pinch discharge to additive compression of imploding shock plasmas

H. Matsuo, K. Ebihara, Y. Ohya, K. Fujiwara, and H. Kudo

Appl. Phys. Lett. 49, 443 (1986); http://dx.doi.org/10.1063/1.97109 (2 pages) | Cited 3 times

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Cylindrical imploding shock waves were produced by detonating cylindrical explosive shells. The Z‐pinch discharge was applied to the additive compression of imploding plasmas. Pulsive electric current was supplied through the axis of imploding plasmas at the instant of focusing. An additional rise of temperature of 50–100% was achieved. It might then be concluded that the additive compression of imploding shock plasmas is attained by the application of the Z‐pinch discharge.
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52.50.Lp Plasma production and heating by shock waves and compression
47.40.Nm Shock wave interactions and shock effects
52.55.Ez Theta pinch

Evidence for electron‐induced x‐ray emission in sputtering deposition

M. Hecq

Appl. Phys. Lett. 49, 445 (1986); http://dx.doi.org/10.1063/1.97110 (2 pages) | Cited 2 times

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A new technique is shown to study in situ the chemical composition of sputtered films. The method is based on the x‐ray emission induced by the fast electrons of the sputtering discharge. The sputtering chamber is coupled with a vacuum x‐ray spectrometer. As a demonstration of the method, the Co deposition is studied. The Co Lα x‐ray line and the deposition rate (by means of a quartz microbalance) are recorded as a function of time. X‐ray intensity increases quickly during the first minutes of the deposition, then levels off gradually while the deposition rate remains constant. It is speculated that a fraction of a monolayer should be detectable.
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68.55.Nq Composition and phase identification
81.15.Cd Deposition by sputtering
79.20.Kz Other electron-impact emission phenomena
82.80.-d Chemical analysis and related physical methods of analysis

Ion implantation and thermal oxidation as treatments to initiate sustained oxide wear in steels

E. B. Hale, R. A. Kohser, and R. A. Reinbold

Appl. Phys. Lett. 49, 447 (1986); http://dx.doi.org/10.1063/1.97111 (3 pages) | Cited 2 times

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Both nitrogen implantation (2.5×1017 N+2 /cm2 at 180 keV) and low‐temperature (≊315 °C) oxidation are shown to produce an order of magnitude reduction in the wear rate of an SAE 3135 steel. Measurements of the wear rates, wear member asymmetry behavior, and both scanning electron microscopy and Auger studies indicate that the same mechanism leads to the much improved wear rates. Both treatments substantiate the initiator/sustainer wear model, in which the initiation treatment reduces the wear to a low value that is sustained throughout the wear test. The sustained stage is a form of mild wear, which involves oxygen and appears to be oxidative wear.
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81.40.Pq Friction, lubrication, and wear
81.05.Bx Metals, semimetals, and alloys
61.72.up Other materials
62.20.Qp Friction, tribology, and hardness

Temperature dependence of electrical properties of non‐doped and nitrogen‐doped beta‐SiC single crystals grown by chemical vapor deposition

Akira Suzuki, Atsuko Uemoto, Mitsuhiro Shigeta, Katsuki Furukawa, and Shigeo Nakajima

Appl. Phys. Lett. 49, 450 (1986); http://dx.doi.org/10.1063/1.97112 (3 pages) | Cited 36 times

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Electrical properties of non‐doped and nitrogen‐doped n‐type β‐SiC films grown on Si substrates have been investigated at 70–1000 K. Those of non‐doped films remarkably depend on the Si/C ratio of the source gases. The highest mobilities of non‐doped films are 510 and 1330 cm2 V−1 s−1 at 296 and 71 K, respectively. The carrier concentrations are as low as 6×1016 cm−3 even at 1000 K. Ionization energies of 34 –37 meV for nitrogen donors and 19–25 meV for unknown donors of non‐doped films are obtained. Mobilities of both non‐doped and nitrogen‐doped films are dominated by lattice scattering at high temperatures and by impurity scattering at low temperatures. Nitrogen donors strongly affect the impurity scattering.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Rs Electrical and magnetic properties related to treatment conditions

Development and origin of conical structures on XeCl laser ablated polyimide

P. E. Dyer, S. D. Jenkins, and J. Sidhu

Appl. Phys. Lett. 49, 453 (1986); http://dx.doi.org/10.1063/1.97113 (3 pages) | Cited 69 times

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Stable, well‐defined conical structures have been observed to develop on the surface of excimer laser etched polyimide. Deliberate seeding shows that these are induced by the shielding effect of particulate impurities and indicates means for controlling the surface microstructure.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)

Effect of conduction‐band nonparabolicity on quantized energy levels of a quantum well

T. Hiroshima and R. Lang

Appl. Phys. Lett. 49, 456 (1986); http://dx.doi.org/10.1063/1.97114 (2 pages) | Cited 38 times

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The effects of conduction‐band nonparabolicity on quantized energy levels of an In0.5Ga0.5As /In0.5Al0.5As quantum well have been analyzed using the original Luttinger–Kohn ‘‘effective mass’’ equation, which is, in principle, valid as long as the perturbation to the periodic lattice potential can be regarded as slowly varying. The results differ substantially from those previously reported which employed the energy‐dependent effective mass approach.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.10.-w Theories and models of many-electron systems

Intensity‐dependent cyclotron resonance in a GaAs/GaAlAs two‐dimensional electron gas

G. A. Rodríguez, R. M. Hart, A. J. Sievers, F. Keilmann, Z. Schlesinger, S. L. Wright, and W. I. Wang

Appl. Phys. Lett. 49, 458 (1986); http://dx.doi.org/10.1063/1.97115 (3 pages) | Cited 6 times

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Cyclotron resonance of a two‐dimensional electron gas at a GaAs/GaAlAs interface is measured in the far infrared at intensities of up to 10 kW/cm2. Both the cyclotron mass and the carrier density are independent of intensity but the relaxation time changes with a dependence which is similar to that observed earlier in high dc field mobility studies.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Ht High-field and nonlinear effects
78.20.Ls Magneto-optical effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

p‐channel, strained quantum well, field‐effect transistor

T. J. Drummond, T. E. Zipperian, I. J. Fritz, J. E. Schirber, and T. A. Plut

Appl. Phys. Lett. 49, 461 (1986); http://dx.doi.org/10.1063/1.97116 (3 pages) | Cited 38 times

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A p‐channel field‐effect transistor with a 3.5 μm Cr/Au gate was fabricated from a modulation‐doped GaAs/In0.2Ga0.8As/GaAs quantum well structure. Well‐behaved transistor action was observed at both 300 and 77 K with extrinsic transconductances of 6.2 and 11.3 mS/mm, respectively. Shubnikov–deHaas measurements prove the existence of a two‐dimensional hole gas with a strain‐shifted light‐hole ground state associated with a light‐hole mass of 0.154m0.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Native oxide encapsulation for annealing boron‐implanted Hg1−xCdxTe

T.‐M. Kao and T. W. Sigmon

Appl. Phys. Lett. 49, 464 (1986); http://dx.doi.org/10.1063/1.97117 (3 pages) | Cited 10 times

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We report for the first time the successful use of the Hg1−xCdxTe native oxide as an encapsulation layer for an annealing process designed to activate an implanted impurity. The annealing process does not require Hg over pressure and consists of both furnace (∼200 °C) and rapid thermal (∼320 °C) anneals. Using 2.2 MeV 4He+ ion channeling measurements, we show that the implantation damage can be annealed out without loss of Hg from the substrate. Also, both secondary ion mass spectrometry and differential van der Pauw measurements indicate that the resulting electron concentration profile closely matches that of the implanted 11B profile and the electrical junction is found to lie close to the expected position of the metallurgical junction.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Rs Electrical and magnetic properties related to treatment conditions
61.80.Jh Ion radiation effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Low pressure organometallic vapor phase epitaxial growth of device quality GaAs directly on (100) Si

S. K. Shastry and S. Zemon

Appl. Phys. Lett. 49, 467 (1986); http://dx.doi.org/10.1063/1.97118 (3 pages) | Cited 18 times

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The epitaxial growth and properties of GaAs layers directly deposited on (100) Si substrates using a low‐temperature process are reported. The GaAs layers were grown by organometallic vapor phase epitaxy with a two‐step process and without any high‐temperature heat treatment of the Si substrates. The layers were of single domain with net carrier concentrations less than 1014 cm−3. Intentionally doped n‐type layers (Nd≂1016 cm−3) showed room‐temperature electron mobility of 5780 cm2/V s. The high structural quality of GaAs is demonstrated by device characteristics as well as by x‐ray diffraction measurements. The observation that an intrinsic mechanism dominates the photoluminescence spectra is another indication of high quality epitaxy.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.40.Fy Semiconductors

Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping

Pallab K. Bhattacharya, Sunanda Dhar, Paul Berger, and Feng‐Yuh Juang

Appl. Phys. Lett. 49, 470 (1986); http://dx.doi.org/10.1063/1.97119 (3 pages) | Cited 35 times

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We have studied the effects of adding small amounts of In (0.2–1.2%) to GaAs grown by molecular beam epitaxy. The density of four electron traps decreases in concentration by an order of magnitude, and the peak intensities of prominent emissions in the excitonic spectra are reduced with increase in In content. Based on the higher surface migration rate of In, compared to Ga, at the growth temperatures it is apparent that the traps and the excitonic transitions are related to point defects. This agrees with earlier observations by F. Briones and D. M. Collins [J. Electron. Mater. 11, 847 (1982)] and B. J. Skromme, S. S. Bose, B. Lee, T. S. Low, T. R. Lepkowski, R‐Y. DeJule, G. E. Stillman, and J. C. M. Hwang [J. Appl. Phys. 58, 4702 (1985)].
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.35.Fx Diffusion; interface formation
78.40.Fy Semiconductors

Magneto‐optic recording materials with direct overwrite capability

Han‐Ping D. Shieh and Mark H. Kryder

Appl. Phys. Lett. 49, 473 (1986); http://dx.doi.org/10.1063/1.97120 (2 pages) | Cited 51 times

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The possibility of achieving direct overwrite capability in magneto‐optic thin films is demonstrated. By using films having a compensation temperature tens of degrees higher than the ambient temperature, the demagnetizing field can effectively be used as a bias field for thermomagnetic writing in which writing and erasing of domains are accomplished in the absence of a magnetic field. A read‐before‐write scheme is proposed to facilitate the write/erase laser trigger signal to perform overwriting in real time.
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85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
78.20.Ls Magneto-optical effects
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
42.79.Vb Optical storage systems, optical disks

Laser‐driven chemical reaction for etching LiNbO3

C. I. H. Ashby and P. J. Brannon

Appl. Phys. Lett. 49, 475 (1986); http://dx.doi.org/10.1063/1.97121 (3 pages) | Cited 12 times

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The first laser‐driven chemical reaction for etching ionic solids based on the fusion of salts in the molten phase is reported here for the reaction of LiNbO3 with KF. The process involves spatially localized melting of LiNbO3 by high‐power‐density laser pulses with photon energies in excess of the band gap of LiNbO3. While molten, LiNbO3 undergoes reaction with KF to form niobium oxyfluoride anions by fusion of the salts. The resulting solid is highly water soluble. The insolubility of LiNbO3 permits subsequent removal of only the irradiated area by rinsing in water. This laser‐driven chemical etching process shows great potential for applications which require either smooth surface morphology or very rapid etching rates.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
FREE

Comment on ‘‘Physical processes in degradation of amorphous Si:H’’ [Appl. Phys. Lett. 48, 846 (1986)]

S. Guha and M. Hack

Appl. Phys. Lett. 49, 478 (1986); http://dx.doi.org/10.1063/1.97122 (1 page) | Cited 1 time

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Abstract Unavailable
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72.80.Ng Disordered solids
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
78.40.Fy Semiconductors
FREE

Response to ‘‘Comment on ‘Physical processes in degradation of amorphous Si:H’ ’’ [Appl. Phys. Lett. 49, 478 (1986)]

David Redfield

Appl. Phys. Lett. 49, 478 (1986); http://dx.doi.org/10.1063/1.97123 (2 pages)

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Abstract Unavailable
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72.80.Ng Disordered solids
78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
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