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1 Sep 1986

Volume 49, Issue 9, pp. 483-538


Optical processing of acoustical holograms in a liquid crystal convertor

R. Beaulieu, J. L. Dion, and R. A. Lessard

Appl. Phys. Lett. 49, 483 (1986); http://dx.doi.org/10.1063/1.97124 (3 pages)

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Acoustical image holograms have been recorded at 3.6 MHz using a specially designed nematic liquid crystal convertor. These holograms are reconstructed with He‐Ne laser light. The figures presented illustrate the practicability of the system, particularly in the field of nondestructive testing.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
42.30.Va Image forming and processing
81.70.-q Methods of materials testing and analysis

Speed and effectiveness of windowless GaAs étalons as optical logic gates

Y. H. Lee, H. M. Gibbs, J. L. Jewell, J. F. Duffy, T. Venkatesan, A. C. Gossard, W. Wiegmann, and J. H. English

Appl. Phys. Lett. 49, 486 (1986); http://dx.doi.org/10.1063/1.97125 (3 pages) | Cited 21 times

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The effectiveness of surface recombination in speeding up the relaxation of a GaAs étalon is reported. Various thickness (1.5, 0.5, 0.3, 0.13 μm) bulk GaAs windowless samples were fabricated and tested as optical logic gates. Times for complete recovery of transmission lie between 400 and 30 ps. The response shows a roughly linear increase in speed as the sample thickness decreases, consistent with surface recombination being the dominant relaxation mechanism. A very fast cycle time of 70 ps is demonstrated using a 0.3‐μm‐thick windowless GaAs étalon as an all‐optical logic device. Proton‐bombarded samples show slower recovery and poorer contrast, and they require more gating energy.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Single crystal, epitaxial multilayers of AlAs, GaAs, and AlxGa1−xAs for use as optical interferometric elements

P. L. Gourley and T. J. Drummond

Appl. Phys. Lett. 49, 489 (1986); http://dx.doi.org/10.1063/1.97126 (3 pages) | Cited 27 times

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We propose using single crystal multilayers of AlAs, GaAs, and AlxGa1−xAs for use as several different kinds of optical interference elements which include high reflectors, transmission filters, and Fabry–Perot cavities. We have grown many of these structures by molecular beam epitaxy and measured their optical characteristics. We find the characteristics of these structures to be very useful for a number of applications for integrated optical devices which we also propose.
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42.79.Ci Filters, zone plates, and polarizers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.82.-m Integrated optics
42.25.Hz Interference

Anomalous ultrasonic dispersion in fluid‐coupled, fibrous composite plates

D. E. Chimenti and Adnan H. Nayfeh

Appl. Phys. Lett. 49, 492 (1986); http://dx.doi.org/10.1063/1.97127 (2 pages) | Cited 8 times

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The ultrasonic dispersion characteristics of vertically polarized plate waves in fluid‐coupled plates of unidirectional graphite‐fiber reinforced epoxy have been found experimentally to display anomalous dispersion. This anomaly consists of a mixing of the two fundamental plate modes at phase velocities near the bulk composite transverse wavespeed. A calculation of ultrasonic reflection from a fluid‐coupled composite plate accounts very well for the previously unreported experimental observations. It is demonstrated that the anomalous dispersion is a consequence of the presence of the fluid and is strongly enhanced by the highly anisotropic elastic nature of the composite. It is further shown that a much weaker manifestation of the effect also exists in fluid‐coupled plates of elastically isotropic materials.
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43.40.Dx Vibrations of membranes and plates
43.35.Bf Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in liquids, liquid crystals, suspensions, and emulsions
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products

Low pressure, light initiated, glow discharge switch for high power applications

George F. Kirkman and Martin A. Gundersen

Appl. Phys. Lett. 49, 494 (1986); http://dx.doi.org/10.1063/1.97128 (2 pages) | Cited 24 times

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A low pressure glow discharge switch that has a number of features that are desirable for high power applications is described. The switch has achieved high stand‐off voltage and peak current, has potential for very fast current rate of rise, and operates near the glow‐to‐arc transition in hydrogen or helium. Closure is initiated by light incident on the back of the cathode, and it is observed that surface damage within the area of illumination is less than surrounding areas. Several aspects of the switch are similar to thyratrons and pseudosparks.
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52.75.Kq Plasma switches (e.g., spark gaps)
52.80.Hc Glow; corona
52.80.-s Electric discharges
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Improved tribological properties of sputtered MoSx films by ion beam mixing

K. Kobs, H. Dimigen, H. Hübsch, H. J. Tolle, R. Leutenecker, and H. Ryssel

Appl. Phys. Lett. 49, 496 (1986); http://dx.doi.org/10.1063/1.97129 (3 pages) | Cited 14 times

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Ion beam mixing yielded a distinct enhancement in the sliding life of sputtered MoSx films without any deterioration of the excellent lubrication properties. This effect occurs only at higher ion energies indicating an improved film‐substrate adherence caused by a mixing of the interface, which was confirmed by secondary ion mass spectrometry and topographical investigations. In addition to that a considerable enhancement of the film density was found due to a reorientation of the MoSx platelets which led also to an improvement of the effective film thickness.
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81.40.Pq Friction, lubrication, and wear
62.20.Qp Friction, tribology, and hardness
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Electrical and thermal properties of new pyrographite films based on a condensation polymer, polyoxadiazole

Hiroyuki Yasujima, Mutsuaki Murakami, and Susumu Yoshimura

Appl. Phys. Lett. 49, 499 (1986); http://dx.doi.org/10.1063/1.97130 (3 pages) | Cited 5 times

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Magnetoresistance, Hall coefficient, and thermal diffusivity of new high‐quality graphite films prepared by pyrolysis of a condensation polymer, poly( p‐phenylene‐1,3,4‐oxadiazole) were measured. The total carrier density, mobility, and thermal conductivity were 1.6×1019 cm−3, 7400 cm2 V−1 s−1, and 11 W cm−1 K−1 for the graphite film annealed at 3000 °C, which are almost comparable to those of highest quality graphites known so far. Drastic changes in the electronic and thermal properties with the heat‐treatment temperature were found and discussed in relation to the development of the high‐quality graphite.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
72.20.My Galvanomagnetic and other magnetotransport effects
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Compound materials for reversible, phase‐change optical data storage

M. Chen, K. A. Rubin, and R. W. Barton

Appl. Phys. Lett. 49, 502 (1986); http://dx.doi.org/10.1063/1.97617 (3 pages) | Cited 109 times

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Results of rapid (laser induced) and slow (heating stage induced) crystallization studies on Te1−xGex, 0≤x≤0.6, are reported. The time it takes to laser crystallize varies with x by more than four orders of magnitude. Films with stoichiometric compositions, Te and GeTe, can be crystallized using laser pulses of less than 100 ns duration. Unlike Te, which spontaneously crystallizes at room temperature, GeTe has a crystallization temperature of >150 °C. From these results we argue that, in general, compound materials allow realization of fast‐switching, reversible, phase‐change optical recording media. Furthermore, this fast‐switching capability, from the amorphous to the crystalline state and back, can be attained simultaneously with long term data (amorphous phase) stability, provided the melting temperature of the compound is sufficiently high.
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42.79.Vb Optical storage systems, optical disks
68.60.Dv Thermal stability; thermal effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Tv Optical and dielectric properties related to treatment conditions

Stability of nitrogen‐rich titanium nitride and zirconium nitride films

K. Salmenoja, A. S. Korhonen, E. Erola, and J. M. Molarius

Appl. Phys. Lett. 49, 505 (1986); http://dx.doi.org/10.1063/1.97131 (2 pages) | Cited 11 times

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Thin titanium nitride (TiN) and zirconium nitride (ZrN) films containing excess nitrogen up to 62 and 65 at. % N, respectively, were deposited on austenitic stainless steel sheet substrates by triode ion plating at about 823 K. The nitrogen content of the films was determined using the nuclear resonance broadening technique based on the 15N(p,αγ)12C nuclear reaction and x‐ray diffraction was used to study the phase compositions. Annealing experiments in evacuated quartz tubes were carried out at 773 and 1173 K to test the stability of the coatings. The results showed no essential differences for TiN before and after heat treatment. Slight indications of diffusion accompanied with the transformation of remaining α‐Zr to ZrN were found in the case of ZrN films after heat treatment at the higher temperature of 1173 K.
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68.60.Dv Thermal stability; thermal effects
81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.40.Gh Other heat and thermomechanical treatments
68.55.Nq Composition and phase identification

Cesium migration and equilibrium in a strong electric field on the surface of silicon

G. G. P. van Gorkom, A. van Oostrom, J. E. Crombeen, and A. M. E. Hoeberechts

Appl. Phys. Lett. 49, 507 (1986); http://dx.doi.org/10.1063/1.97132 (3 pages) | Cited 3 times

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It is found experimentally that a balance between the chemical force and the force due to an applied electric field acting on fractionally charged cesium particles on the surface of silicon leads to an equilibrium state. Measurements of the coverage gradient (∂θ/∂x) in this equilibrium state give a relation between the gradient of the chemical potential (mainly the binding energy Ub) and the fractional charge of the cesium particles. For cesium atoms on silicon this relation is found to be f=0.16∂Ub/∂θ+0.03.
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66.30.Qa Electromigration
66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation
68.35.Md Surface thermodynamics, surface energies

Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion

D. G. Deppe, L. J. Guido, N. Holonyak, K. C. Hsieh, R. D. Burnham, R. L. Thornton, and T. L. Paoli

Appl. Phys. Lett. 49, 510 (1986); http://dx.doi.org/10.1063/1.97133 (3 pages) | Cited 132 times

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Impurity‐free selective layer disordering, utilizing Si3N4 masking stripes and SiO2 defect (vacancy) sources, is used to realize room‐temperature continuous AlxGa1−xAs‐GaAs quantum well heterostructure lasers.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Jb Light-emitting devices
68.35.Fx Diffusion; interface formation

High‐speed enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors exhibiting very high transconductance

A. Antreasyan, P. A. Garbinski, V. D. Mattera, and H. Temkin

Appl. Phys. Lett. 49, 513 (1986); http://dx.doi.org/10.1063/1.97105 (3 pages) | Cited 3 times

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We report the fabrication and performance of enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors having transconductances as high as 200 mS/mm for a gate length of 1 μm. The epitaxial layers of the structure have been grown by chloride vapor phase epitaxy. Electron beam evaporated SiO2 has been utilized as gate insulator. The metal‐insulator‐semiconductor field‐effect transistors have low gate to source leakage currents (<125 nA) and saturation drift velocities as high as 3×107 cm/s. The transconductance value achieved in the present work is the highest ever measured on InP field‐effect transistors.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Ballistic avalanche photodiodes: Ultralow noise avalanche diodes with nearly equal ionization probabilities

J. N. Hollenhorst

Appl. Phys. Lett. 49, 516 (1986); http://dx.doi.org/10.1063/1.97106 (3 pages) | Cited 6 times

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Avalanche photodiode structures are proposed which theoretically exhibit very low excess noise. In these designs, the hole and electron ionization probabilities are made very close to unity for a single pass of the multiplication region. This is accomplished by ballistic injection across the gain region. The structures are less complex than other proposed low noise avalanche photodiode structures.
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85.60.Dw Photodiodes; phototransistors; photoresistors
72.70.+m Noise processes and phenomena
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells

T. E. Schlesinger and T. Kuech

Appl. Phys. Lett. 49, 519 (1986); http://dx.doi.org/10.1063/1.97107 (3 pages) | Cited 155 times

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We have employed photoluminescence spectroscopy to determine the temperature dependence of the interdiffusion coefficient of Al and Ga in GaAs/Al0.3Ga0.7As quantum wells. The position of the photoluminescence peaks, due to the n=1 electron to heavy‐hole transition, was measured before and after annealing the samples. A variational calculation was employed to determine the expected position of these photoluminescence peaks and from this a value of the interdiffusion coefficient was extracted. The interdiffusion process is characterized by an activation energy of about 6 eV leading to an interdiffusion coefficient at 850 °C of 4×10−19 cm2/s. This technique allows for the measurement of small diffusion coefficients in a wide variety of material systems.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
78.40.Fy Semiconductors

Operation of the Si/CoSi2/Si heterostructure transistor

J. C. Hensel

Appl. Phys. Lett. 49, 522 (1986); http://dx.doi.org/10.1063/1.97099 (3 pages) | Cited 7 times

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A two‐current path model is presented to describe the operation of the Si/CoSi2/Si epitaxial, heterostructure transistor. The model gives a good account of the device behavior and allows us to conclude that it works by activated charge control, in a formal sense like a bipolar transistor. The analysis further suggests that with the fine base dimensions made possible by the single crystal, vertical structure one can foresee devices with β’s of a 100 or more, at the same time maintaining a transconductance close to the optimal value 0.04 mhos/mA characteristic of a charge injection device.
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85.30.De Semiconductor-device characterization, design, and modeling
85.30.Pq Bipolar transistors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Anomalous diffusion and gettering of transition metals in silicon

D. R. Sparks, R. G. Chapman, and N. S. Alvi

Appl. Phys. Lett. 49, 525 (1986); http://dx.doi.org/10.1063/1.97100 (3 pages) | Cited 31 times

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By using metallic haze to detect the presence of transition metals in silicon, and rapid thermal annealing to thermally process wafers, anomalous diffusion and gettering of transition metals in silicon have been observed. Gettering is observed over a wide temperature range (300 –1100 °C) and anneal duration (1–300 s). The rapid initial gettering is found to occur over mechanical and laser damaged areas but not over polycrystalline silicon backsealed regions. Surface diffusion is found to dominate over anomalous bulk diffusion at the lower temperatures investigated.
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66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Nuclear magnetic resonance measurements of lattice distortions in GaAs:In

W. E. Carlos, S. G. Bishop, and D. J. Treacy

Appl. Phys. Lett. 49, 528 (1986); http://dx.doi.org/10.1063/1.97101 (3 pages) | Cited 17 times

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Nuclear magnetic resonance (NMR) has been used to probe the atomic displacements and bond bending around an isovalent impurity (In) in the GaAs lattice. It is concluded that the In atoms substitute on the Ga sublattice, that they do not cluster, and that the strain field induced by these isolated atoms is sufficient to affect the NMR of arsenic atoms as far away as 30 Å. Estimates of bond angle distortions in the nearest atomic shells around the In atom are discussed.
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61.66.Fn Inorganic compounds
61.05.Qr Magnetic resonance techniques; Mössbauer spectroscopy (for structure determination only)
76.60.Gv Quadrupole resonance
61.72.S- Impurities in crystals

Nonlinear spectroscopy of InGaAs/InAlAs multiple quantum well structures

J. S. Weiner, D. B. Pearson, D. A. B. Miller, D. S. Chemla, D. Sivco, and A. Y. Cho

Appl. Phys. Lett. 49, 531 (1986); http://dx.doi.org/10.1063/1.97102 (3 pages) | Cited 31 times

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The first investigation of nonlinear absorption in InGaAs/InAlAs multiple quantum wells using picosecond and cw infrared lasers is presented. The nonlinearity is demonstrated to be due to plasma‐induced excitonic bleaching. The measured saturation densities agree with those predicted by theory.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.35.-y Excitons and related phenomena
78.30.-j Infrared and Raman spectra
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Determination of transport coefficients in high mobility heterostructure systems in the presence of parallel conduction

D. A. Syphers, K. P. Martin, and R. J. Higgins

Appl. Phys. Lett. 49, 534 (1986); http://dx.doi.org/10.1063/1.97103 (3 pages) | Cited 23 times

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The effect of a parasitic parallel conducting layer on the measurement of longitudinal and transverse magnetoresistances of a high mobility two‐dimensional (2D) electron gas in modulation‐doped heterostructures is considered. A circuital analysis which takes into account the effect of circulating currents at the Hall contacts is presented, and previous descriptions of this situation are shown to be inapplicable. The resultant equations correctly predict the behavior of the longitudinal and transverse magnetoresistances at both high and low magnetic fields, and correlate well with the measured values. They also allow one to accurately determine the 2D mobility and density as well as the parallel layer resistivity.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Fr Low-field transport and mobility; piezoresistance
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling
FREE

Comment on ‘‘Galvanomagnetic luminescence of indium antimonide’’ [Appl. Phys. Lett. 47, 1330 (1985)]

Takeshi Morimoto and Meiro Chiba

Appl. Phys. Lett. 49, 537 (1986); http://dx.doi.org/10.1063/1.97104 (1 page) | Cited 2 times

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Abstract Unavailable
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78.60.-b Other luminescence and radiative recombination
78.20.Ls Magneto-optical effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.My Galvanomagnetic and other magnetotransport effects
FREE

Response to ‘‘Comment on ‘Galvanomagnetic luminescence of indium antimonide’ ’’ [Appl. Phys. Lett. 49, 537 (1986)]

Paul Berdahl and Louie Shaffer

Appl. Phys. Lett. 49, 537 (1986); http://dx.doi.org/10.1063/1.97616 (2 pages)

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The authors respond to the comments of Morimoto and Chiba by pointing out that the authors theory and unpublished data on the galvanomagnetic luminescence in indium antimonide supports the conclusion that the emission intensity is independent of the thickness for values of the thickness (d) much larger than the effective diffusion length L (3 microns). This contradicts the conclusion of Morimoto and Chiba who determined that the emission varied as d−2.(AIP)
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78.60.-b Other luminescence and radiative recombination
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.20.Ls Magneto-optical effects
72.20.My Galvanomagnetic and other magnetotransport effects
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