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5 Jan 1987

Volume 50, Issue 1, pp. 1-54


High‐spectral‐purity cw and pulse output from an ensemble of discrete diode lasers

Kristin K. Anderson and Robert H. Rediker

Appl. Phys. Lett. 50, 1 (1987); http://dx.doi.org/10.1063/1.98243 (3 pages) | Cited 6 times

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The spectrum of the output from an external‐cavity laser containing five discrete diode lasers operating as a coherent ensemble has been shown to correspond to a single mode of the cavity with very narrow linewidth. For cw operation, the linewidth is within the 7.5‐MHz measurement resolution. Pulsed outputs from a low‐level cw baseline are reported for which the single‐mode pulse output is also within the 7.5‐MHz measurement resolution. The measured linewidth of the single‐mode pulse output with no cw output is 9 MHz.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Thermal resistance of ridge‐waveguide lasers mounted upside down

Markus‐Christian Amann

Appl. Phys. Lett. 50, 4 (1987); http://dx.doi.org/10.1063/1.98128 (3 pages) | Cited 10 times

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The heat dissipation in upside down mounted ridge‐waveguide lasers equipped with a double‐channel structure is analyzed by a simplified device model. Assuming an isothermal active region, the thermal resistance is obtained by means of conformal mapping. A comparison to published experimental results shows good agreement.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Electron beam pumped lasing in ZnSe grown by molecular beam epitaxy

J. E. Potts, T. L. Smith, and H. Cheng

Appl. Phys. Lett. 50, 7 (1987); http://dx.doi.org/10.1063/1.98130 (3 pages) | Cited 21 times

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We report the first observations of lasing action in electron beam pumped ZnSe grown by molecular beam epitaxy on (100) GaAs substrates. In spite of the small thicknesses (approximately 2 μm) of the films used, lasing thresholds as low as 3.9 A/cm2 have been measured at an accelerating voltage of 20 kV when the (nominal) sample temperature was 15 K. Threshold currents increased for sample temperatures greater than 100 K, and for accelerating voltages both less than and greater than 20 kV.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.-f Lasers

Self‐starting passive phase conjugate mirror with Ce‐doped strontium barium niobate

George A. Rakuljic, Koichi Sayano, Amnon Yariv, and Ratnakar R. Neurgaonkar

Appl. Phys. Lett. 50, 10 (1987); http://dx.doi.org/10.1063/1.98122 (3 pages) | Cited 8 times

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We report the use of Ce‐doped SrxBa1−xNb2O6, x=0.60 and 0.75, as the holographic four‐wave mixing medium in the construction of a self‐starting passive phase conjugate mirror using internal reflection. Without correcting for Fresnel reflections, a steady‐state phase conjugate reflectivity of 25% was measured with Sr0.75Ba0.25Nb2O6:Ce. The distortion correcting property of such a mirror was demonstrated using an imaging experiment.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.40.My Applications
42.79.Bh Lenses, prisms and mirrors

Thermal piston model for the optoacoustic effect: Sound generation in an optically thick gas

R. B. Stewart and G. J. Diebold

Appl. Phys. Lett. 50, 13 (1987); http://dx.doi.org/10.1063/1.98123 (3 pages) | Cited 3 times

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At high concentrations of an infrared absorbing gas, the optical absorption length for the incident radiation can become small compared with the thermal diffusion length in the gas. A description of the optoacoustic effect consequently must include thermal conduction of heat to the cell window since sound generation takes place in a thin layer of gas adjacent to the entrance window. A piston model is given here for the optoacoustic effect generated in a highly absorbing gas; in addition, experiments are reported that show new phase and amplitude dependences of the acoustic signal on gas concentrations, and modulation frequency.
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43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
44.10.+i Heat conduction
51.40.+p Acoustical properties

Grain growth observation of 〈100〉 textured germanium film by transmission electron microscopy

Atushi Ogura and Hiroshi Terao

Appl. Phys. Lett. 50, 16 (1987); http://dx.doi.org/10.1063/1.98124 (3 pages) | Cited 3 times

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Grain growth of 〈100〉 textured Ge films on amorphous SiO2 substrates during 900 °C isothermal annealing was observed by transmission electron microscopy. An rf sputtering technique was used to deposit the films. By using initially 〈100〉 textured film, grain growth (∼1.5 μm diameter) occurs and is enhanced (∼2 μm diameter) by square‐wave‐shape grooves fabricated on a SiO2 surface, although initial films are relatively thick (0.6 μm). On the other hand, this grooving edge also has an effect of interrupting the grain growth. These grain growths can be explained by the minimization of the energy required for grain rotation (rotational energy) during grain coalescence.
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61.72.Mm Grain and twin boundaries
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.-a Thin film structure and morphology

Mechanisms of buried oxide formation by ion implantation

Alice E. White, K. T. Short, J. L. Batstone, D. C. Jacobson, J. M. Poate, and K. W. West

Appl. Phys. Lett. 50, 19 (1987); http://dx.doi.org/10.1063/1.98264 (3 pages) | Cited 43 times

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We have studied the process of buried oxide formation as a function of implantation and annealing conditions. Concentrating on substoichiometric implants (<1×1018 O/cm2), we varied the implantation energies from 100 keV to 1 MeV. Some apparent precipitation of SiO2 similar to that observed in Czochralski‐grown silicon occurs on implantation. This means that formation of the buried oxide layer and perfection of the overlying crystalline Si layer depend more strongly on the substrate temperature during the implant than on the annealing temperature.
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61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology
68.35.Dv Composition, segregation; defects and impurities

Scanning tunneling microscopy on photoconductive semi‐insulating GaAs

G. F. A. van de Walle, H. van Kempen, P. Wyder, and P. Davidsson

Appl. Phys. Lett. 50, 22 (1987); http://dx.doi.org/10.1063/1.98125 (3 pages) | Cited 23 times

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The increase in surface conductivity upon illumination of semi‐insulating GaAs was used to enable surface‐topography measurements with a scanning tunneling microscope (STM). Images were recorded in ultrahigh vacuum and in air using a HeNe laser and a halogen lamp for the generation of a photoconductive top layer. From the current‐voltage characteristics of the tip‐sample contact the maximum feedback‐controlled tunnel current at a given voltage can be deduced. A calculation of the increase in carrier density and conductance upon illumination is given, which confirms the possibility of using STM on highly resistive photoconductive materials. Further implications and applications are discussed.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
73.25.+i Surface conductivity and carrier phenomena
73.50.Pz Photoconduction and photovoltaic effects
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Finite element design of diamond anvils

William C. Moss and Kenneth A. Goettel

Appl. Phys. Lett. 50, 25 (1987); http://dx.doi.org/10.1063/1.98115 (3 pages) | Cited 28 times

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We have performed finite element analyses of beveled diamond anvils. Our analyses show that double beveling can improve the performance of the diamond anvil cell and maintain the stability of the sample, which is often sacrificed when large angle single bevel diamonds are used.
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07.35.+k High-pressure apparatus; shock tubes; diamond anvil cells
62.20.F- Deformation and plasticity
62.50.-p High-pressure effects in solids and liquids

Dislocation transport in shock‐loaded single crystals

J. N. Johnson

Appl. Phys. Lett. 50, 28 (1987); http://dx.doi.org/10.1063/1.98116 (3 pages)

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It has been previously observed that the impact surface of [100] shock‐loaded lithium fluoride is a strong source of dislocations. These dislocations, on one side of the impact surface, are nearly all of the same sign and move in the same direction when the driving (impact) stress is maintained. This produces an excess of like‐signed dislocations between the impact surface and the advancing planar shock front. It is shown that inclusion of dislocation transport effects in the equation for dislocation regeneration is required when surface sources are present. A derivation of the general expression of dislocation transport is presented along with some specific results for [100] loaded lithium fluoride. These results have important consequences regarding proper analysis of elastic precursor decay and rate‐dependent plastic deformation in shock‐loaded solids.
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62.50.-p High-pressure effects in solids and liquids
62.20.F- Deformation and plasticity

Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates

J. W. Lee, H. Shichijo, H. L. Tsai, and R. J. Matyi

Appl. Phys. Lett. 50, 31 (1987); http://dx.doi.org/10.1063/1.98117 (3 pages) | Cited 96 times

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Post growth thermal annealing has been used to reduce the defect density of GaAs layers grown on Si substrates by molecular beam epitaxy. Transmission electron microscopy indicates a 100× reduction of the true defect density. Twins and stacking faults were eliminated entirely. Most misfit dislocations were confined within the first ∼150 Å GaAs layer and formed a regular and narrow network along the Si/GaAs interface. Similar results were obtained from an ion implanted and annealed specimen.
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68.35.Dv Composition, segregation; defects and impurities
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.Bb Theories and models of crystal defects
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Photocurrent spectroscopy of lattice‐matched superlattice electrodes in photoelectrochemical cells

A. J. Nozik, B. R. Thacker, J. A. Turner, J. Klem, and H. Morkoç

Appl. Phys. Lett. 50, 34 (1987); http://dx.doi.org/10.1063/1.98118 (3 pages) | Cited 11 times

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Photocurrent spectra of GaAs/Al0.38Ga0.62As lattice‐matched superlattice electrodes were obtained in photoelectrochemical cells containing nonaqueous liquid electrolyte; spectra were compared for two electron acceptors, cobalticinium and ferrocinium, having redox potentials (energy levels) that differ by 1.33 V. The spectra were found to be independent of acceptor energy levels, in sharp contrast to previous results with GaAs/GaAs0.5P0.5As strained‐layer superlattices. These results indicate that for lattice‐matched systems hot‐electron transfer from upper quantum states in the quantum wells is not a dominant process. This is explained by the much lower surface trapping rates in lattice‐matched superlattices compared to strained‐layer superlattices.
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73.40.Mr Semiconductor-electrolyte contacts
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
82.50.-m Photochemistry
82.47.-a Applied electrochemistry

Effect of lattice mismatch in ZnSe epilayers grown on GaAs by molecular beam epitaxy

K. Mohammed, D. A. Cammack, R. Dalby, P. Newbury, B. L. Greenberg, J. Petruzzello, and R. N. Bhargava

Appl. Phys. Lett. 50, 37 (1987); http://dx.doi.org/10.1063/1.98119 (3 pages) | Cited 36 times

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We report a detailed study of the effect of lattice mismatch on ZnSe epilayers grown on 〈001〉 GaAs by molecular beam epitaxy using photoluminescence (PL), x‐ray diffraction, and transmission electron microscopy (TEM) techniques. We find that our samples are of high quality, exhibiting sharp and strong bound excitons, and that these bound excitons shift to higher energies due to tetragonal distortion as the thickness of the ZnSe epilayer is systematically reduced from ∼1 to 0.1 μm. Fairly good agreement is found between PL and x‐ray data for the total strain relaxation as a function of layer thickness. TEM measurements are also used to estimate an inelastic component of the strain relaxation in the layers.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.60.Bs Mechanical and acoustical properties
78.55.Et II-VI semiconductors

Faulted dipoles in GaAs

B. C. De Cooman and C. B. Carter

Appl. Phys. Lett. 50, 40 (1987); http://dx.doi.org/10.1063/1.98120 (3 pages) | Cited 15 times

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Faulted dipoles in GaAs have been directly imaged by high‐resolution transmission electron microscopy. The dislocation dipoles were introduced into the GaAs by deforming a sample in compression along a 〈110〉 axis. Both the Z character of the dipole and the intrinsic nature of the stacking faults could be determined directly from the high‐resolution images. Using convergent‐beam electron diffraction, it has been shown that it is possible to determine the polarity of the sample and thereby to differentiate between the α and β partial dislocations.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Photoluminescence characterization of single heterojunction quantum well structures

O. Aina, M. Mattingly, F. Y. Juan, and P. K. Bhattacharya

Appl. Phys. Lett. 50, 43 (1987); http://dx.doi.org/10.1063/1.98121 (3 pages) | Cited 23 times

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A photoluminescence emission band at 830 nm has been detected in single heterojunction quantum well structures (modulation‐doped structures) in the range of 250–400 K. This emission band is observed neither in heterojunction structures without a two‐dimensional electron gas (2DEG), nor in n+ AlGaAs and GaAs. The intensity of the emission band increases as the mobility of the samples with 2DEG and shows excitonic behavior in its variation with incident laser excitation intensity. This photoluminescence emission was observed in samples grown by both molecular beam epitaxy and by organometallic vapor phase epitaxy. This effect may be useful as a rough identification of high quality, modulation‐doped heterostructures.
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78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Electron population factor in light enhanced oxidation of silicon

E. M. Young and William A. Tiller

Appl. Phys. Lett. 50, 46 (1987); http://dx.doi.org/10.1063/1.98126 (3 pages) | Cited 31 times

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Electrons in the electron/hole creation event are shown to be the prime catalytic agent in photon‐stimulated oxidation enhancement of silicon. Oxidation enhancement in the 10–50% range occurs at only moderate power density levels of visible wavelength light and increases greatly for photon energies just exceeding the conduction‐band edge between SiO2 and Si. ‘‘Hot’’‐electron injection into the SiO2 is thought to enhance the oxidation via a process of electron attachment to some of the in‐diffusing O2 species, with subsequent dissociation into O and O− species. This injected hot‐electron flux reaction with O2 is thought to also occur at a reduced level during standard thermal oxidation.
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81.65.-b Surface treatments
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Erbium doping of molecular beam epitaxial GaAs

R. S. Smith, H. D. Müller, H. Ennen, P. Wennekers, and M. Maier

Appl. Phys. Lett. 50, 49 (1987); http://dx.doi.org/10.1063/1.98127 (3 pages) | Cited 43 times

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The doping of molecular beam epitaxial GaAs with erbium up to a concentration of 2×1019 cm−3 has been successfully demonstrated. Up to a concentration of about 5×1018 cm−3 the surface morphology remained good but for higher doping levels the surface became structured. Hall and profile measurements indicate that erbium doping gives rise to a trapping level capable of compensating silicon‐doped layers. For the first time photoluminescence from a rare earth element incorporated in a III‐V semiconductor has been observed at room temperature.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.55.Hx Other solid inorganic materials
68.55.-a Thin film structure and morphology

Experiments of the superconducting proximity effect between superconductor and semiconductor

Mutsuko Hatano, Toshikazu Nishino, and Ushio Kawabe

Appl. Phys. Lett. 50, 52 (1987); http://dx.doi.org/10.1063/1.98129 (3 pages) | Cited 5 times

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Coherence length in a semiconductor induced by the superconductor proximity effect is obtained experimentally from superconducting transition temperature measurements based on the de Gennes–Werthamer–Hauser theory. It was found that the coherence length in the semiconductor increases with increase in the carrier concentration n as a function of n1/3. This result agreed with the numerical result derived from the Seto–Van Duzer theory.
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74.50.+r Tunneling phenomena; Josephson effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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