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9 Mar 1987

Volume 50, Issue 10, pp. 551-625

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Mechanism of electroluminescence in alkaline‐earth sulfides

Richard S. Crandall

Appl. Phys. Lett. 50, 551 (1987); http://dx.doi.org/10.1063/1.98131 (3 pages) | Cited 41 times

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A novel use of a staircase voltage waveform shows that three light emission peaks can be produced with a unipolarity voltage pulse in alkaline‐earth‐sulfide electroluminescent devices. Two peaks following the voltage decrease demonstrate the following: Light can be produced at fields much below those required for hot‐electron effects. Activators are ionized when a field is applied. Recombination controls electroluminescence.
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78.60.Fi Electroluminescence
73.61.Ng Insulators
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Noncritically phase‐matched sum frequency generation and image up‐conversion in KNbO3 crystals

Jean‐Claude Baumert and Peter Günter

Appl. Phys. Lett. 50, 554 (1987); http://dx.doi.org/10.1063/1.98132 (3 pages) | Cited 11 times

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Tunable and continuous wave (cw) near infrared up‐conversion into the dark blue wavelength range (410–465 nm) has been achieved in KNbO3 crystals using the nonlinear optical coefficient d32 (ω1+ω2; ω1,ω2)=20.4 pm/V. High efficiencies have been reached due to the large nonlinearity and the possibility of temperature‐tuned noncritical 90° phase matching. Using a neodymium:yttrium aluminum garnet laser (1064.2 nm) as the signal source and a krypton laser (676.4 nm) as the pump source, a sum signal (413.6 nm) power of over 0.1 mW was reached at a pump power of only 26.2 mW. cw image up‐conversion into the blue wavelength range has been demonstrated using a noncritically phase‐matched configuration in the same crystals at T=−4 °C.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Fc Modulation, tuning, and mode locking
78.20.-e Optical properties of bulk materials and thin films

Iterative method for computing the inverse Abel transform

Pablo A. Vicharelli and Walter P. Lapatovich

Appl. Phys. Lett. 50, 557 (1987); http://dx.doi.org/10.1063/1.98133 (3 pages) | Cited 14 times

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A rapidly converging iterative method based on deconvolution techniques is proposed for the computation of the inverse Abel transform. The calculations only involve repeated applications of the forward Abel transform and no derivatives are needed. The iterative method is shown to be less susceptible to noise amplification when compared with other techniques.
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02.70.-c Computational techniques; simulations
02.60.Nm Integral and integrodifferential equations

Plasma enhanced chemical vapor deposition of fluorinated silicon nitride using SiH4‐NH3‐NF3 mixtures

R. E. Livengood and D. W. Hess

Appl. Phys. Lett. 50, 560 (1987); http://dx.doi.org/10.1063/1.98134 (3 pages) | Cited 9 times

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Fluorinated silicon nitride films are deposited by the plasma enhanced reaction of SiH4‐NH3‐NF3 gas mixtures. The deposition rate with NF3 increases to a maximum of approximately six times that of SiNxHy deposited using only SiH4 and NH3. Optical and electrical properties of the SiNxHy films are also affected. The addition of NF3 to the deposition atmosphere significantly reduces the concentration of H bonded to Si. The films display dielectric properties similar to SiNxHy films deposited using SiH4 and NH3. All films containing F hydrolyze on exposure to air. When less than 10 at. % F is present in the as‐deposited films, film stability is achieved after initial hydrolysis. Essentially total hydrolysis to SiO2 occurs when the F content exceeds 10 at. %.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.66.-w Optical properties of specific thin films
73.61.Ng Insulators

Growth and dissolution of oxide films during laser‐assisted combustion of Ti and Zr

I. Ursu, I. N. Mihailescu, L. C. Nistor, V. S. Teodorescu, A. M. Prokhorov, V. I. Konov, and V. G. Ralchenko

Appl. Phys. Lett. 50, 563 (1987); http://dx.doi.org/10.1063/1.98135 (3 pages) | Cited 2 times

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cw CO2 laser‐assisted combustion of Ti and Zr in Xe:O2 and N2:O2 gaseous mixtures was studied. Total dissolution of oxide films and/or formation of oxynitride layers on both metals were evidenced and the growth of giant oxide nuclei of up to 100×10×10 μm3 was observed upon burning Zr samples.
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82.33.Vx Reactions in flames, combustion, and explosions
81.05.Bx Metals, semimetals, and alloys
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Differential scanning calorimetry study of solid‐state amorphization in multilayer thin‐film Ni/Zr

R. J. Highmore, J. E. Evetts, A. L. Greer, and R. E. Somekh

Appl. Phys. Lett. 50, 566 (1987); http://dx.doi.org/10.1063/1.98136 (3 pages) | Cited 46 times

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Differential scanning calorimetry (DSC) has been used to study solid‐state amorphization and subsequent crystallization in sputtered multilayer Ni/Zr thin films. Initial results provide quantitative information about the thermodynamics and kinetics of these processes. An analysis of DSC data enables the activation energy and pre‐exponential factor for interdiffusion of Ni and Zr in a‐NiZr to be found.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Fx Diffusion; interface formation
68.35.Rh Phase transitions and critical phenomena
68.55.Nq Composition and phase identification

Scanning tunneling microscope as a micromechanical tool

M. A. McCord and R. F. W. Pease

Appl. Phys. Lett. 50, 569 (1987); http://dx.doi.org/10.1063/1.98137 (2 pages) | Cited 26 times

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The need to fashion materials on a submicron scale is now well recognized. In a scanning tunneling microscope we have been able to achieve nanometer scale control of the depth of penetration of the probe into a thin insulating film, and by laterally traversing the probe we have been able to machine away submicron‐wide, 20‐nm‐thick strips of the insulating film without damage to the substrate or probe. This could represent a new approach to ultrafine machining. However, the detailed mechanism of how the tunneling current through the film can be used to control the machining depth is still unclear.
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81.65.-b Surface treatments
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
73.40.Gk Tunneling
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Chemical effects in ion mixing of a ternary system (metal‐SiO2)

T. Banwell, M‐A. Nicolet, T. Sands, and P. J. Grunthaner

Appl. Phys. Lett. 50, 571 (1987); http://dx.doi.org/10.1063/1.98138 (3 pages) | Cited 4 times

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The mixing of Ti, Cr, and Ni thin films with SiO2 by low‐temperature (−196–25 °C) irradiation with 290 keV Xe has been investigated. Comparison of the morphology of the intermixed region and the dose dependences of net metal transport into SiO2 reveals that long range motion and phase formation probably occur as separate and sequential processes. Kinetic limitations suppress chemical effects in these systems during the initial transport process. Chemical interactions influence the subsequent phase formation.
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61.80.Jh Ion radiation effects
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification
68.35.Fx Diffusion; interface formation

Detection and measurement of local distortions in a semiconductor layered structure by convergent‐beam electron diffraction

D. M. Maher, H. L. Fraser, C. J. Humphreys, R. V. Knoell, and J. C. Bean

Appl. Phys. Lett. 50, 574 (1987); http://dx.doi.org/10.1063/1.98139 (3 pages) | Cited 23 times

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It is shown that local tetragonal distortion in a Si Ge0.05Si0.95 strained‐layered structure can be detected and quantified from analyses of the high‐order Laue zone lines which are present in the bright‐field disks of [001] convergent‐beam electron diffraction patterns. The detection of a tetragonal distortion is based on symmetry arguments, whereas the quantification requires a detailed analysis which is based on computer simulated patterns, assuming a kinematical approximation of the scattering process and including surface relaxation. The result of this quantitative analysis is in good agreement with the tetragonal distortion which is predicted by isotropic elasticity theory.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology

Formation of submicron epitaxial islands of Pd2Si on silicon

C. B. Boothroyd, W. M. Stobbs, and K. N. Tu

Appl. Phys. Lett. 50, 577 (1987); http://dx.doi.org/10.1063/1.98140 (3 pages) | Cited 1 time

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It has been found that annealing Pd‐Er deposits on a (001) silicon surface results in the formation of isolated submicron islands of Pd2Si with two epitaxially oriented habits. By contrast, when Pd is annealed on a (111) silicon substrate, Pd2Si is formed with full coverage and a specific epitaxy.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Influence of fast neutrons on electrical properties in neutron transmutation doped GaAs: New annealing stage

M. Satoh, K. Kuriyama, M. Yahagi, K. Iwamura, C. Kim, T. Kawakubo, K. Yoneda, and I. Kimura

Appl. Phys. Lett. 50, 580 (1987); http://dx.doi.org/10.1063/1.98141 (3 pages) | Cited 18 times

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In neutron transmutation doping (NTD) to the undoped semi‐insulating GaAs, a new annealing stage related to the tunneling assisted hopping conduction was found around 400 °C for fast neutron fluences of ≥7.0×1017 n/cm2. It is suggested that this stage is based on the enhancement in the hopping conduction by the activated dopant in the NTD process. The stage was not observed for the irradiation with a small amount of fast neutrons. The activation energy for the annihilation of As antisite defects (AsGa) was found to be 0.9 eV. The annealing temperature to achieve the desired carried concentration increased with the fast neutron fluence.
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61.80.Hg Neutron radiation effects
61.72.U- Doping and impurity implantation
81.40.Rs Electrical and magnetic properties related to treatment conditions
72.80.Ey III-V and II-VI semiconductors

Fast P‐doped silicon bolometer for detecting heat pulses

C. Boragno, U. Valbusa, and G. Pignatel

Appl. Phys. Lett. 50, 583 (1987); http://dx.doi.org/10.1063/1.98087 (2 pages) | Cited 5 times

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A new detector of ballistic phonons is presented. It is a P‐doped Si bolometer realized on top of a (100)Si crystal by ion implantation. The open circuit responsivity of the bolometer is 8000 V/W and the response time less than 50 ns. Time‐resolved spectra of ballistic phonons propagating in the same Si crystal along the 〈100〉 direction are reported.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
63.20.K- Phonon interactions
05.70.-a Thermodynamics
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Optical reading of field‐effect transistors by phase‐space absorption quenching in a single InGaAs quantum well conducting channel

D. S. Chemla, I. Bar‐Joseph, C. Klingshirn, D. A. B. Miller, J. M. Kuo, and T. Y. Chang

Appl. Phys. Lett. 50, 585 (1987); http://dx.doi.org/10.1063/1.98088 (3 pages) | Cited 22 times

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We present the first observation of absorption quenching by electrical control of the carrier density in a single semiconductor quantum well used as conducting channel in a field‐effect transistor. The effect is large enough to allow direct reading of the transistor logic state.
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85.30.Tv Field effect devices
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Influence of boron on tin induced interdiffusion in GaAs‐Ga0.72Al0.28As superlattices

E. V. K. Rao, P. Ossart, F. Alexandre, and H. Thibierge

Appl. Phys. Lett. 50, 588 (1987); http://dx.doi.org/10.1063/1.98089 (3 pages) | Cited 23 times

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By performing different annealing treatments on variously tin‐doped molecular beam epitaxially grown GaAs‐Ga0.72Al0.28As quantum well structures, we show here the following: (i) tin, like other donor atoms silicon and sulfur, also induces disordering by enhancing interdiffusion coefficients, and (ii) a voluntary introduction of boron atoms in a tin‐doped structure prior to annealing leads to a retardation in tin enhanced interdiffusion.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Fx Diffusion; interface formation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

X‐ray photoelectron spectroscopy study of Schottky barrier formation and thermal stability of the LaB6/GaAs(001) c (4×4) interface

Tatsuo Yokotsuka, Tadashi Narusawa, Yoko Uchida, and Hisao Nakashima

Appl. Phys. Lett. 50, 591 (1987); http://dx.doi.org/10.1063/1.98090 (3 pages) | Cited 1 time

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Schottky barrier formation and thermal stability of the LaB6/GaAs(001) c (4×4) interface were investigated by x‐ray photoelectron spectroscopy. Results show an excellent thermal stability without any appreciable interface reactions such as interdiffusion. Band bending induced by LaB6 deposition is found to depend on the evaporation condition. However, the Fermi level pinning position does not change due to heat treatments between 300 and 700 °C. This indicates that LaB6 is a promising gate material for GaAs integrated circuits.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
85.30.Tv Field effect devices
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Interfacially initiated crystallization in amorphous germanium films

Hitoshi Homma, Ivan K. Schuller, Walter Sevenhans, and Yvan Bruynseraede

Appl. Phys. Lett. 50, 594 (1987); http://dx.doi.org/10.1063/1.98091 (3 pages) | Cited 12 times

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The amorphous to microcrystalline phase transition of Ge in Pb/Ge multilayers has been extensively studied. During crystallization, the x‐ray diffraction peaks of the modulated structure disappear and the Pb texture improves. It is shown that the crystallization temperature decreases with decreasing amorphous Ge thickness and is strongly affected by the texture of the metallic component. These results imply that the crystallization is interfacially initiated.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.Nq Composition and phase identification
68.35.Rh Phase transitions and critical phenomena
64.70.K- Solid-solid transitions

Hg1−xMnxTe‐CdTe superlattices grown by molecular beam epitaxy

X. Chu, S. Sivananthan, and J. P. Faurie

Appl. Phys. Lett. 50, 597 (1987); http://dx.doi.org/10.1063/1.98092 (3 pages) | Cited 4 times

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Molecular beam epitaxial growth of Hg1−xMnxTe‐CdTe superlattices is reported here for the first time. They have been characterized by electron and x‐ray diffraction, infrared transmission, and Hall measurements. The presence of satellite peaks in the x‐ray spectra shows that Hg1−xMnxTe‐CdTe superlattices have narrower band gaps than the equivalent quaternary Hg1−x−yMnxCdyTe. These superlattices exhibit a band‐gap energy in the 0.1–0.3 eV range, demonstrating that they are a new infrared material. All these superlattices are n type even though their HgMnTe layers have been grown to be p type. Thus the type III‐type I superlattice transition could not be investigated for hole mobility.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Piezomodulated electronic spectra of semiconductor heterostructures: GaAs/AlxGa1−xAs quantum well structures

Y. R. Lee, A. K. Ramdas, F. A. Chambers, J. M. Meese, and L. R. Ram Mohan

Appl. Phys. Lett. 50, 600 (1987); http://dx.doi.org/10.1063/1.98093 (3 pages) | Cited 26 times

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Optical transitions associated with the electronic levels of a single quantum well in GaAs/AlxGa1−xAs heterostructures are observed with exceptional clarity in the piezomodulated reflectivity spectrum measured down to liquid helium temperature. The splitting of such transitions in multiple quantum well structures due to the coupling of the electronic levels in the adjacent wells is illustrated with results on a double quantum well.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Determination of spatial potential fluctuations in Si and GaAs inversion layers by weak localization

P. M. Mensz, R. G. Wheeler, C. T. Foxon, and J. J. Harris

Appl. Phys. Lett. 50, 603 (1987); http://dx.doi.org/10.1063/1.98094 (3 pages) | Cited 11 times

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Drawing upon our current understanding of the weak localization correction to the Drüde conductivity in quasi‐two‐dimensional systems, a method of measuring the random motion of charge carriers perpendicular to the plane of the quantum confinement is demonstrated. This technique has been applied to silicon inversion layers and a GaAs heterojunction to determine, with subangstrom resolution, the mean fluctuation of the average perpendicular position of the electron wave function during transport parallel to the potential barrier.
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73.25.+i Surface conductivity and carrier phenomena
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.Fz Weak or Anderson localization
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Electronic properties of In0.53Ga0.47As‐InP single quantum wells grown by chemical beam epitaxy

Michel Frei, D. C. Tsui, and W. T. Tsang

Appl. Phys. Lett. 50, 606 (1987); http://dx.doi.org/10.1063/1.98095 (3 pages) | Cited 6 times

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In0.53Ga0.47As‐InP single quantum well (SQW) structures grown by chemical beam epitaxy (CBE) were studied using low‐field magnetotransport, the quantum Hall effect, and far‐infrared cyclotron resonance measurements at 4.2 K. We compare results on the two‐dimensional electron gas (2DEG) in the SQW’s and the single interface heterojunctions. These results confirm the high quality of the material grown by CBE and demonstrate conclusively that the use of the SQW’s for 2DEG confinement can effectively eliminate the parallel conduction often present in single interface structures.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Ey III-V semiconductors

Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−y source

L. J. Guido, G. S. Jackson, W. E. Plano, K. C. Hsieh, N. Holonyak, R. D. Burnham, J. E. Epler, R. L. Thornton, and T. L. Paoli

Appl. Phys. Lett. 50, 609 (1987); http://dx.doi.org/10.1063/1.98096 (3 pages) | Cited 15 times

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A unique form of Si impurity‐induced layer disordering (Si IILD) is described that utilizes a ‘‘buried’’ Si source, a (Si2)y(GaAs)1−y barrier, and a patterned external source of column III vacancies, an SiO2 cap, to define the layer disordering. This form of Si IILD is used to fabricate stripe‐geometry index‐guided laser diodes that are capable of kink‐free single‐mode operation.
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42.55.Px Semiconductor lasers; laser diodes
66.30.J- Diffusion of impurities
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
42.60.By Design of specific laser systems

Importance of space‐charge effects in resonant tunneling devices

M. Cahay, M. McLennan, S. Datta, and M. S. Lundstrom

Appl. Phys. Lett. 50, 612 (1987); http://dx.doi.org/10.1063/1.98097 (3 pages) | Cited 90 times

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The consideration of space charge in the analysis of resonant tunneling devices leads to a substantial modification of the current‐voltage relationship. The region of negative differential resistance (NDR) is shifted to a higher voltage, and broadened along the voltage axis. Moreover, the peak value of current prior to NDR is reduced, leading to a reduction in the predicted peak‐to‐valley ratio. An approach is presented to include space‐charge effects, and a recently fabricated GaAs‐AlxGa1−xAs structure is analyzed, to underscore the importance of a self‐consistent electrostatic potential in theoretical calculations.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
85.30.De Semiconductor-device characterization, design, and modeling

Optical properties of AlxIn1−xP grown by organometallic vapor phase epitaxy

D. P. Bour, J. R. Shealy, G. W. Wicks, and W. J. Schaff

Appl. Phys. Lett. 50, 615 (1987); http://dx.doi.org/10.1063/1.98098 (3 pages) | Cited 38 times

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AlxIn1−xP epilayers grown by organometallic vapor phase epitaxy are characterized by electroreflectance, photoluminescence, and Raman spectroscopy. Electroreflectance measurements of the E0 band gap show significant bowing of the direct band gap with composition. The compositional dependence of the direct gap is found to be EΓ(x)=1.35+1.83x+0.38x2 (eV). In the Raman scattering spectrum, the AlP‐like longitudinal optical phonon mode is identified and its energy is measured as a function of composition.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
78.20.Jq Electro-optical effects

Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy

Won‐Pyo Hong, Pallab K. Bhattacharya, and Jasprit Singh

Appl. Phys. Lett. 50, 618 (1987); http://dx.doi.org/10.1063/1.98099 (3 pages) | Cited 31 times

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Anomalous behavior in Hall data of molecular beam epitaxial In0.52Al0.48As/InP for T≥400 K suggests the presence of alloy clustering. The relaxation time for alloy clustering has been determined and analysis of measured data gives an estimate of composition fluctuation and cluster size. Evidence of clustering in the same samples is also obtained from the measured velocity‐field characteristics, low‐temperature photoluminescence data, and carrier impact ionization coefficients.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Ey III-V semiconductors
68.55.-a Thin film structure and morphology

Dynamical states and stability of linear arrays of Josephson junctions

P. Hadley and M. R. Beasley

Appl. Phys. Lett. 50, 621 (1987); http://dx.doi.org/10.1063/1.98100 (3 pages) | Cited 71 times

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We consider a one‐dimensional array of dc‐biased Josephson junctions shunted by a load of passive circuit elements. The load serves to couple the ac Josephson effect oscillations in the various junctions, giving rise to dynamical states of the system that do not appear for a single junction. Our results demonstrate two distinct phase‐locked states of the array, hysteresis, and chaotic behavior depending on the load and the value of the bias current. Implications of these results for local oscillator applications of such arrays are also discussed.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
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