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Applied Physics Letters / Volume 50 / Issue 10

Appl. Phys. Lett. 50, 612 (1987); http://dx.doi.org/10.1063/1.98097 (3 pages)

Importance of space‐charge effects in resonant tunneling devices

M. Cahay, M. McLennan, S. Datta, and M. S. Lundstrom

School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907

(Received 5 November 1986; accepted 6 January 1987)

The consideration of space charge in the analysis of resonant tunneling devices leads to a substantial modification of the current‐voltage relationship. The region of negative differential resistance (NDR) is shifted to a higher voltage, and broadened along the voltage axis. Moreover, the peak value of current prior to NDR is reduced, leading to a reduction in the predicted peak‐to‐valley ratio. An approach is presented to include space‐charge effects, and a recently fabricated GaAs‐AlxGa1−xAs structure is analyzed, to underscore the importance of a self‐consistent electrostatic potential in theoretical calculations.

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KEYWORDS and PACS

Keywords

FABRICATION, IV CHARACTERISTIC, ELECTRIC POTENTIAL, ELECTROSTATICS, GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, SPACE CHARGES, TUNNEL DIODES, RESONANCE, TUNNEL EFFECT

PACS

  • 85.30.Mn

    Junction breakdown and tunneling devices (including resonance tunneling devices)

  • 73.40.Kp

    III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

  • 73.40.Gk

    Tunneling

  • 85.30.De

    Semiconductor-device characterization, design, and modeling

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.98097

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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