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Applied Physics Letters / Volume 50 / Issue 10

Appl. Phys. Lett. 50, 615 (1987); http://dx.doi.org/10.1063/1.98098 (3 pages)

Optical properties of AlxIn1−xP grown by organometallic vapor phase epitaxy

D. P. Bour, J. R. Shealy, G. W. Wicks, and W. J. Schaff

School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, New York 14853

(Received 7 November 1986; accepted 7 January 1987)

AlxIn1−xP epilayers grown by organometallic vapor phase epitaxy are characterized by electroreflectance, photoluminescence, and Raman spectroscopy. Electroreflectance measurements of the E0 band gap show significant bowing of the direct band gap with composition. The compositional dependence of the direct gap is found to be EΓ(x)=1.35+1.83x+0.38x2 (eV). In the Raman scattering spectrum, the AlP‐like longitudinal optical phonon mode is identified and its energy is measured as a function of composition.

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KEYWORDS and PACS

Keywords

RAMAN SPECTROSCOPY, EPITAXIAL LAYERS, PHOTOLUMINESCENCE, ELECTROREFLECTANCE, VAPOR PHASE EPITAXY, VAPOR DEPOSITED COATINGS, ENERGY GAP, CHEMICAL COMPOSITION, PHONONS, OPTICAL PHONONS, INDIUM PHOSPHIDES, ALUMINIUM PHOSPHIDES

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.98098

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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