APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

23 Mar 1987

Volume 50, Issue 12, pp. 705-777


Surface emitting laser diode with bent waveguide

Mutsuo Ogura, Ming‐chiang Wu, Wei Hsin, John R. Whinnery, and Shyh Wang

Appl. Phys. Lett. 50, 705 (1987); http://dx.doi.org/10.1063/1.98073 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
A surface emitting laser diode (SELD) with a bent double heterostructure is fabricated on a grooved substrate. This SELD has a facet angle of 20 ° and lased at a threshold current of 120 mA. The external quantum efficiency is 33%. The far‐field pattern has sharp peaks at 10 ° and 18 ° and wider emission bands between 25 ° and 45 °. Radiation loss by the bent waveguide is also estimated by the equivalent current source model.
Show PACS
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers

Novel optoelectronic single quantum well devices based on electron bleaching of exciton absorption

A. Kastalsky, J. H. Abeles, and R. F. Leheny

Appl. Phys. Lett. 50, 708 (1987); http://dx.doi.org/10.1063/1.98074 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
Novel planar optoelectronic devices with two‐dimensional exciton absorption controlled by free‐carrier‐induced bleaching are proposed. Exciton‐resonant light propagates along a single mode rib waveguide containing a single quantum well (SQW), the only absorbing medium in the waveguide. Three such devices operating as optical modulators are (1) a gate‐controlled field‐effect transistor optical modulator (FETOM), (2) an optically readable memory element, and (3) an optically switched charge storage device. The FETOM, in which free‐carrier density in the SQW is controlled by gate voltage, offers high speed (37.5 ps), small size (125 μm), and low power (86 nW/MHz).
Show PACS
85.60.-q Optoelectronic devices
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.79.Vb Optical storage systems, optical disks
85.30.Tv Field effect devices

Pulse generation with an acousto‐optic frequency shifter in a passive cavity

F. V. Kowalski, J. A. Squier, and J. T. Pinckney

Appl. Phys. Lett. 50, 711 (1987); http://dx.doi.org/10.1063/1.98075 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
A train of pulses is generated by coupling the cw output of a single frequency He‐Ne laser into a passive ring ‘‘cavity’’ which contains an acousto‐optic frequency shifter. Each cavity pass shifts the frequency of the wave by 80 MHz. This results in an intensity pattern which is an Airy function in time. For a single frequency input, the output pulse width is 2 ns with a repetition rate of 80 MHz. Data are also presented on the output of this device for multimode cw input.
Show PACS
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Ridge waveguide injection laser with a GaInAs strained‐layer quantum well (λ=1 μm)

S. E. Fischer, D. Fekete, G. B. Feak, and J. M. Ballantyne

Appl. Phys. Lett. 50, 714 (1987); http://dx.doi.org/10.1063/1.98076 (3 pages) | Cited 31 times

Full Text: | Download PDF

Show Abstract
Ridge waveguide lasers emitting near 1 μm have been made on a GaAs substrate using a single GaInAs strained‐layer quantum well in a GaAs/AlGaAs graded‐index separate confinement heterostructure. The epitaxial layers were grown by low‐pressure metalorganic chemical vapor deposition, and the ridge waveguide was fabricated by chemically assisted ion beam etching. The lasers have threshold currents near 17 mA with fundamental lateral mode operation to five times this value. These are the first reported strained‐layer current‐injection lasers to run cw at room temperature; they operate, without bonding, to greater than 24 mW/facet (100 mA dc), and have 18 mW/facet (80 mA dc) lifetimes in excess of 144 h.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Generation and detection of picosecond acoustic pulses in thin metal films

Gary L. Eesley, Bruce M. Clemens, and Carolyn A. Paddock

Appl. Phys. Lett. 50, 717 (1987); http://dx.doi.org/10.1063/1.98077 (3 pages) | Cited 51 times

Full Text: | Download PDF

Show Abstract
We report on the use of picosecond duration laser pulses to generate picosecond acoustic pulses in metal films on the order of 200 nm thick. The acoustic pulses are detected by means of transient piezoreflectance measurements. We demonstrate the use of a thin metal overlayer to enhance the piezoreflectance signal.
Show PACS
43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
68.60.Bs Mechanical and acoustical properties
43.35.Ns Acoustical properties of thin films
62.80.+f Ultrasonic relaxation

Enhancement of keV x‐ray emission in laser‐produced plasmas by a weak prepulse laser

R. Kodama, T. Mochizuki, K. A. Tanaka, and C. Yamanaka

Appl. Phys. Lett. 50, 720 (1987); http://dx.doi.org/10.1063/1.98078 (3 pages) | Cited 41 times

Full Text: | Download PDF

Show Abstract
X‐ray conversion efficiency in a 0.53‐μm laser‐produced copper plasma is studied in the 1.5–5.0 keV range as a function of laser pulse duration (τL) with a laser intensity of 1×1014 W/cm2. The efficiency increases as τ1.3L at pulse lengths of less than 400 ps. For a 200‐ps pulse duration, an enhancement of the conversion efficiency is observed with the use of a prepulse. The efficiency is found to be proportional to the scale length of a preformed plasma. Enhancement of a factor 3 is observed for the shots with a prepulse.
Show PACS
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
07.85.-m X- and γ-ray instruments

Experimental determination of laser heated surface temperature distributions

F. Shaapur and S. D. Allen

Appl. Phys. Lett. 50, 723 (1987); http://dx.doi.org/10.1063/1.98079 (2 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
A new scheme has been developed to measure laser‐induced temperature distributions on solid surfaces, based on a first‐order phase transition of an optically and thermally thin surface film where the transformed zone periphery marks the phase change isotherm of the film material. In order to test the technique, experimental measurements were made on a system for which analytical theoretical calculations and input parameters were available: steady‐state 9.27‐μm CO2 laser heating of semi‐infinite SiC samples. The melting of polycrystalline films of NaCl (m.p. of 801 °C) and the eutectic mixture of NaCl‐KCl (m.p. of 660 °C) spray deposited on the SiC surface served as the indicator. For a particular set of irradiation conditions, theoretical calculations were compared with experiment as a function of incident power.
Show PACS
79.20.Ds Laser-beam impact phenomena
68.35.Md Surface thermodynamics, surface energies
68.35.Rh Phase transitions and critical phenomena
44.10.+i Heat conduction

Stress analysis of encapsulated fine‐line aluminum interconnect

Robert E. Jones and Michael L. Basehore

Appl. Phys. Lett. 50, 725 (1987); http://dx.doi.org/10.1063/1.98263 (3 pages) | Cited 42 times

Full Text: | Download PDF

Show Abstract
Mechanical stresses are known to cause hillock formation and creep voids in aluminum based interconnect on integrated circuits. While the effects of differential thermal expansion between an aluminum film and a silicon substrate are well known, the effects on an encapsulated narrow aluminum line are not. We report here an analysis of the stresses generated in such a line upon cooling from 400 °C after passivation deposition. At 25 °C the principal stresses in the aluminum are all tensile with magnitudes several times the yield strength. The aluminum need not fail, but a high driving force for creep remains. High stresses also are generated in the passivation which could lead to cracking.
Show PACS
85.40.Bh Computer-aided design of microcircuits; layout and modeling
81.05.Bx Metals, semimetals, and alloys
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.60.Bs Mechanical and acoustical properties

Growth of diamond thin films by dc plasma chemical vapor deposition

Kazuhiro Suzuki, Atsuhito Sawabe, Hiroaki Yasuda, and Tadao Inuzuka

Appl. Phys. Lett. 50, 728 (1987); http://dx.doi.org/10.1063/1.98080 (2 pages) | Cited 132 times

Full Text: | Download PDF

Show Abstract
Diamond thin films have been formed by dc plasma chemical vapor deposition with a high growth rate (∼20 μm/h). The diamond has been grown from methane (CH4) and hydrogen (H2) mixed gases on Si and α‐Al2O3 substrates at a pressure of 200 Torr without surface scratching by diamond or c‐BN powder. The obtained films have good crystallinity in the sense of electron and x‐ray diffraction. Vicker’s hardness of the film is the same as that of natural diamond (∼10 000 kg/mm2). The influence of the dc discharge in a low vacuum (∼200 Torr) on diamond synthesis will be discussed briefly.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.60.Bs Mechanical and acoustical properties

Charge injection through Langmuir–Blodgett films into organic polymers

Huoy‐Jen Yuh, Cindy C. Chen, and Inan Chen

Appl. Phys. Lett. 50, 730 (1987); http://dx.doi.org/10.1063/1.98081 (3 pages)

Full Text: | Download PDF

Show Abstract
The steady‐state current‐voltage characteristics resulting from charge injection from a metal into an organic charge transporting polymer are found to deviate significantly from the space‐charge‐limited values when a Langmuir–Blodgett film of cadmium stearate is interposed between the metal and the organic polymer. A phenomenological model of charge injection is proposed to account for the observed features, and to quantify the injection level of a non‐Ohmic contact.
Show PACS
73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
73.40.Gk Tunneling
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Measurement of the ZnSe:MnSe:ZnSe heterojunction valence‐band discontinuities

H. Asonen, J. Lilja, A. Vuoristo, M. Ishiko, and M. Pessa

Appl. Phys. Lett. 50, 733 (1987); http://dx.doi.org/10.1063/1.98082 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
UV‐photoemission spectroscopy was used to measure directly the valence‐band discontinuity ΔEv for both sides of a MnSe layer which was sandwiched between two ZnSe layers by the molecular beam epitaxy method. ΔEv is 0.16±0.05 eV for each interface; the valence‐band edge Emaxv of the wider gap MnSe semiconductor lies within the ZnSe gap. The interface‐pinning position of the Fermi level appears at 1.74 eV above Emaxv of ZnSe. It is concluded that interfacial electrostatic dipoles are small compared to the observed shift in Emaxv of MnSe, which lends a qualitative support to Tersoff’s model [Phys. Rev. Lett. 52, 465 (1984); Phys. Rev. B 30, 4874 (1984)] of heterojunction band offsets.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

D. V. Lang, M. B. Panish, F. Capasso, J. Allam, R. A. Hamm, A. M. Sergent, and W. T. Tsang

Appl. Phys. Lett. 50, 736 (1987); http://dx.doi.org/10.1063/1.98083 (3 pages) | Cited 95 times

Full Text: | Download PDF

Show Abstract
We discuss the use of admittance spectroscopy to measure the band offsets of semiconductor heterojunctions. By using this method to analyze the dynamic response of p‐n junctions containing lattice‐matched InP/Ga0.47In0.53As superlattices we can independently determine both the conduction‐ and valence‐band offsets for this materials system. We find that the sum of these offsets equals the known band‐gap difference between InP and Ga0.47In0.53As and that the ratio of the conduction‐band offset to the valence‐band offset is 42:58.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Photoluminescence and reflection high‐energy electron diffraction dynamics study of the interfaces in molecular beam epitaxially grown GaAs/Al0.33Ga0.67As(100) single quantum wells

J. Y. Kim, P. Chen, F. Voillot, and A. Madhukar

Appl. Phys. Lett. 50, 739 (1987); http://dx.doi.org/10.1063/1.98084 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Comparative photoluminescence studies of GaAs/Al0.33Ga0.67As(100) single quantum wells grown via molecular beam epitaxy at growth conditions identified by the reflection high‐energy electron diffraction intensity static and dynamic behavior are shown, for the first time, to establish a connection between the RHEED determined growth conditions and the structural and chemical quality of the interfaces. This connection is explained on the basis of the expected consequences of the nature of the surface kinetic processes controlling formation of the normal and inverted interfaces.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Fv Solid alkali halides

Formation of interfacial layers in InSb‐CdTe heterostructures studied by Raman scattering

D. R. T. Zahn, K. J. Mackey, R. H. Williams, H. Münder, J. Geurts, and W. Richter

Appl. Phys. Lett. 50, 742 (1987); http://dx.doi.org/10.1063/1.98085 (3 pages) | Cited 40 times

Full Text: | Download PDF

Show Abstract
The formation of a thin interfacial layer of indium telluride in InSb‐CdTe heterostructures has been previously suggested by soft x‐ray photoemission (SXPS) results. However, the detailed nature of this layer was difficult to interpret by SXPS. Therefore, samples being previously investigated by SXPS were studied by Raman spectroscopy. Spectra were taken of heterostructures grown by deposition of CdTe on (100) InSb substrates at room and elevated temperatures. For the room‐temperature sample the vibrational modes of CdTe and crystalline Te were detected. In the case of elevated substrate temperatures it was possible to identify the interfacial layer rich in indium and tellurium as consisting largely of In2Te3 using the Raman spectrum of In2Te3 as a fingerprint. Furthermore, the segregation of antimony was confirmed by the detection of the vibrational modes of antimony at the interface.
Show PACS
68.35.Fx Diffusion; interface formation
68.35.Ja Surface and interface dynamics and vibrations
78.30.Fs III-V and II-VI semiconductors

Trap‐Auger recombination in silicon of low carrier densities

P. T. Landsberg

Appl. Phys. Lett. 50, 745 (1987); http://dx.doi.org/10.1063/1.98086 (3 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
We report an analysis of recent accurate room‐temperature lifetime measurments τ as a function of injected electron concentration n (equal to injected hole concentration). Instead of the earlier authors’ fit to a curve τ−1=a+bn2, we have used τ−1=α+βn+γn2, and have given theoretical formulae for α, β, and γ. An excellent fit for 〈100〉 silicon suggests for γ a sum of the electron and hole band‐band Auger coefficients∼10−30 cm6 s−1, half the value given earlier, but still larger than the accepted value. The importance of the β term is that it indicated that a trap‐band Auger effect plays a part. The relevant recombination coefficient, identified from the fit, has the reasonable value∼10−24 cm6 s−1. The effect seems important in spite of the low residual defect concentration.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Perforation seed structure in electron beam recrystallized silicon‐on‐insulator films

Susumu Horita and Hiroshi Ishiwara

Appl. Phys. Lett. 50, 748 (1987); http://dx.doi.org/10.1063/1.98033 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
A novel perforation seed structure in electron beam recrystallization of silicon‐on‐insulator (SOI) films has been proposed, in which seed regions typically with rectangular shapes are separately arranged along a line, so that voids are not generated in the films during the melting and recrystallization process. The structure was designed based on investigation of the void generation mechanism and its optimum dimensions were determined experimentally from viewpoints of the void suppression effect and the crystalline quality of the SOI films.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.80.Fe Electron and positron radiation effects
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Epitaxial alignment of arsenic implanted polycrystalline silicon films on 〈100〉 silicon obtained by rapid thermal annealing

J. L. Hoyt, E. Crabbé, J. F. Gibbons, and R. F. W. Pease

Appl. Phys. Lett. 50, 751 (1987); http://dx.doi.org/10.1063/1.98034 (3 pages) | Cited 18 times

Full Text: | Download PDF


See Also: Erratum

Show Abstract
We have performed a quantitative analysis of epitaxial quality and arsenic diffusion in ion implanted polycrystalline silicon (polysilicon) layers on 〈100〉 Si, and find a clear advantage for the use of high‐temperature rapid thermal annealing (RTA) in the 10‐s regime to induce intentional, complete epitaxial alignment. The RTA‐induced alignment kinetics and associated arsenic diffusion were studied in the 1050–1150 °C temperature range for arsenic doping concentrations between 1×1020 and 1×1021 cm−3, and were characterized by Rutherford backscattering, ion channeling, and cross‐sectional transmission electron microscopy. The information about the relationship between arsenic diffusion, arsenic concentration, and epitaxial quality resulting from a given RTA cycle will be useful for optimizing bipolar transistors with realigned polysilicon emitter contacts.
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.J- Diffusion of impurities
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Effects of surface defects on the orientation of NiSi2 formed on Si (111) substrates

Gulden Akinci, Timothy Ohno, and Ellen D. Williams

Appl. Phys. Lett. 50, 754 (1987); http://dx.doi.org/10.1063/1.98035 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
The effects of surface reconstruction, surface steps, and deposition temperature on the growth of NiSi2 on Si(111) have been investigated using low‐energy electron diffraction and Auger electron spectroscopy. Surface reconstruction was changed by diffusion of Ni into the substrate, forming a ((19)1/2×(19)1/2) R±23.4° structure. On planar (unstepped) Si(111), the formation of the two domains of NiSi2 occurs under the same conditions on the (19)1/2 and the clean surface (7×7) reconstructions. On vicinal (stepped) Si(111), different step structures form on the clean and Ni‐diffused surfaces. The growth of NiSi2 proceeds differently on the two step structures, both cases being different from growth on the planar surfaces. Specific types of step edges, 〈110〉 vs 〈112〉, appear to favor formation of type B or type A silicides, respectively. At deposition temperatures above 200 °C, a considerable amount of Ni diffuses into the Si substrate without reacting. However, the orientation of the silicide which does form is the same as at lower deposition temperature.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.Dv Composition, segregation; defects and impurities
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Coupled‐stripe AlxGa1−xAs‐GaAs quantum well lasers defined by vacancy‐enhanced impurity‐induced layer disordering from (Si2)y(GaAs)1−y barriers

L. J. Guido, W. E. Plano, G. S. Jackson, N. Holonyak, R. D. Burnham, and J. E. Epler

Appl. Phys. Lett. 50, 757 (1987); http://dx.doi.org/10.1063/1.98036 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
Data are presented showing that high‐performance (>100 mW) AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) coupled‐stripe laser arrays can be realized by vacancy‐enhanced impurity‐induced layer disordering (IILD) employing an internal (Si2)y(GaAs)1−y barrier. This form of Si IILD (i.e., layer disordering from a ‘‘finite’’ internal Si source) results in coupled‐emitter laser operation, even for relatively large stripe (7–10 μm) and spacing dimensions (2 μm), at currents just above threshold and higher. As a separate issue, the Si IILD QWH laser cross sections show that Si diffusion from a surface source is ‘‘slower’’ than the simultaneous vacancy diffusion from an SiO2 surface encapsulant (‘‘cap’’).
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Structure and optical properties of Ge‐Si ordered superlattices

J. Bevk, A. Ourmazd, L. C. Feldman, T. P. Pearsall, J. M. Bonar, B. A. Davidson, and J. P. Mannaerts

Appl. Phys. Lett. 50, 760 (1987); http://dx.doi.org/10.1063/1.98037 (3 pages) | Cited 55 times

Full Text: | Download PDF

Show Abstract
We report the synthesis, structural characterization, and optical studies of ultrathin Ge‐Si superlattices, grown by molecular beam epitaxy, on (001) silicon substrates. Structures consist of alternating layers of pure Ge and Si, with layer thicknesses of 1, 2, 4, and 6 monolayers. Using high‐resolution transmission electron microscopy, we provide direct observation of order in these pseudomorphic layered films. Systematic study of optical transitions by means of Schottky barrier electroreflectance reveals that each of the ordered structures displays a unique set of optical transitions. Of particular interest is the 4×4 structure which shows new, well defined optical transitions at 0.76, 1.25, and 2.31 eV. These transitions constitute the first observation of structurally induced optical transitions in Ge‐Si and may make the 4×4 structure suitable for optoelectronic devices.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.-w Optical properties of specific thin films
85.60.-q Optoelectronic devices
68.55.-a Thin film structure and morphology

Space‐charge‐limited current in thin‐film diamond

S. Ashok, K. Srikanth, A. Badzian, T. Badzian, and R. Messier

Appl. Phys. Lett. 50, 763 (1987); http://dx.doi.org/10.1063/1.98038 (3 pages) | Cited 26 times

Full Text: | Download PDF

Show Abstract
The electrical conduction in thin‐film diamond synthesized by microwave plasma enhanced chemical vapor deposition has been studied with metal‐diamond‐silicon metal‐insulator‐semiconductor structures. Measurements over a wide temperature range provide evidence for space‐charge‐limited current in the presence of traps. An exponential distribution of traps with a peak value of the order of 3×1020 cm−3 eV−1 has been deduced from the current‐voltage‐temperature data.
Show PACS
73.61.Ng Insulators
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Laser projection patterned aluminum metallization for integrated circuit applications

G. E. Blonder, G. S. Higashi, and C. G. Fleming

Appl. Phys. Lett. 50, 766 (1987); http://dx.doi.org/10.1063/1.98039 (3 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
We demonstrate the projection patterning of Al by laser activated metalorganic chemical vapor deposition. The laser activated deposition technique, which selects surface over gas phase reactions, is found to be compatible with standard photolithographic patterning and shows promise for simplifying integrated circuit fabrication. Two applications are highlighted: metal‐oxide field‐effect transistor metallization and Al interconnect fabrication.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
81.05.Bx Metals, semimetals, and alloys
85.30.Tv Field effect devices

Molecular beam epitaxial growth of high‐purity AlGaAs

J. E. Cunningham, W. T. Tsang, T. H. Chiu, and E. F. Schubert

Appl. Phys. Lett. 50, 769 (1987); http://dx.doi.org/10.1063/1.98040 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
We report molecular beam epitaxial (MBE) growth of AlGaAs in the previously unexplored temperature range exceeding 800 °C for which excellent material can be achieved. Photoluminescence reveals bound excitonic linewidth as sharp as 3.6 meV, which is among the narrowest ever reported for material of equivalent Al mole fraction. In this temperature range carbon impurity concentrations are found to be dramatically reduced while temperature‐dependent data provide information from which an understanding of carbon incorporation during MBE growth emerges.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena

Low‐frequency noise in dc superconducting quantum interference devices below 1 K

Frederick C. Wellstood, Cristian Urbina, and John Clarke

Appl. Phys. Lett. 50, 772 (1987); http://dx.doi.org/10.1063/1.98041 (3 pages) | Cited 41 times

Full Text: | Download PDF

Show Abstract
At temperatures below about 1 K, a series of dc superconducting quantum interference devices (SQUID’s) exhibited an apparent flux noise with a spectral density scaling as 1/f α, where 0.58<α<0.80. Typically, the magnitude of the noise increased as the temperature was lowered below 1 K, tending to flatten out at low temperatures with a value of 7±3 μΦ0Hz−1/2 at 1 Hz that was nearly independent of the parameters and materials of the SQUID’s. Although a large number of hypothetical sources of the noise have been eliminated, the origin remains unidentified.
Show PACS
85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion

Novel superconducting thermometer for bolometric applications

D. G. McDonald

Appl. Phys. Lett. 50, 775 (1987); http://dx.doi.org/10.1063/1.98042 (3 pages) | Cited 31 times

Full Text: | Download PDF

Show Abstract
The temperature dependence of the magnetic penetration depth in a superconductor, in the kinetic inductance limit, is proposed as a basis for a sensitive thermometer. Considered as a bolometer, the noise equivalent power from the sum of the Johnson noise and the preamplifier noise can be reduced to about 7×10−20 W/(Hz)1/2, which is approximately four orders of magnitude below currently realized values.
Show PACS
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.25.-j Superconducting devices
07.20.Dt Thermometers
74.25.Ha Magnetic properties including vortex structures and related phenomena
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close