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30 Mar 1987

Volume 50, Issue 13, pp. 783-858

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Stable quasi 0° phase mode operation in a laser array diode nearly aligned with a phase shifter

M. Taneya, M. Matsumoto, S. Matsui, S. Yano, and T. Hijikata

Appl. Phys. Lett. 50, 783 (1987); http://dx.doi.org/10.1063/1.98043 (3 pages) | Cited 7 times

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The phase shift of the 180° out of phase mode to the 0° phase mode is an efficient means for producing a stable high power laser output in a coherent single beam. We fabricated laser array diodes which are operated in a very stable 180° out of phase mode, and a phase shifter in which accurate optical phase shift control is possible. These two devices are nearly aligned and a stable quasi 0° phase mode operation is achieved up to 200 mW without any other optical equipment. This fact indicates that it would be possible for these two devices to be integrated.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Observation of enhanced laser emission and new laser transitions in triple cascade operation of an optically pumped cw HCOOH submillimeter laser

P. A. Stimson, B. W. James, I. S. Falconer, L. B. Whitbourn, and J. C. Macfarlane

Appl. Phys. Lett. 50, 786 (1987); http://dx.doi.org/10.1063/1.98044 (3 pages) | Cited 2 times

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We report an investigation of the enhancement of the output power and the observation of new cw lasing transitions for an optically pumped formic acid laser when the resonator length is adjusted so that it is simultaneously resonant for adjacent rotational cascade transitions. Cascade operation was found to be a particularly useful technique for increasing the power of the second transition of a cascade sequence. New cw transitions were observed at 418 μm (the third member of the 394 μm, 406 μm cascade), 447 μm (the third member of the 419 μm, 432 μm cascade), and 460 μm (the third member of the 433 μm, 446 μm cascade).
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
33.20.Bx Radio-frequency and microwave spectra

Theoretical study of the optimum performance of a two‐phase flow CO2 gasdynamic laser

R. K. Thulasiram, K. P. J. Reddy, and N. M. Reddy

Appl. Phys. Lett. 50, 789 (1987); http://dx.doi.org/10.1063/1.98045 (3 pages) | Cited 2 times

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Theoretical optimization studies of the performance of a combustion driven premixed two‐phase flow gasdynamic laser are presented. The steady inviscid nonreacting quasi‐one‐dimensional two‐phase flow model including appropriate finite rate vibrational kinetic rates has been used in the analysis. The analysis shows that the effect of the particles on the optimum performance of the two‐phase laser is very small. The results are presented in graphical form.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
47.40.Ki Supersonic and hypersonic flows
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
47.55.Kf Particle-laden flows

Phase conjugation of mode scrambled optical beams: Application to spatial recovery and interbeam temporal information exchange

Ram Yahalom, Kazuo Kyuma, and Amnon Yariv

Appl. Phys. Lett. 50, 792 (1987); http://dx.doi.org/10.1063/1.98046 (3 pages) | Cited 1 time

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Coupling of temporal information between two beams is demonstrated using a combination of a multimode fiber and a photorefractive passive phase conjugation mirror. It is shown that the polarization and spatial properties are fully recovered but temporal information is exchanged. The theoretical explanation for these phenomena and possible applications are discussed.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.81.Gs Birefringence, polarization
42.81.Qb Fiber waveguides, couplers, and arrays

1.55‐μm optical logic étalon with picojoule switching energy made of InGaAs/InP multiple quantum wells

K. Tai, J. L. Jewell, W. T. Tsang, H. Temkin, M. Panish, and Y. Twu

Appl. Phys. Lett. 50, 795 (1987); http://dx.doi.org/10.1063/1.98047 (3 pages) | Cited 15 times

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We have constructed all‐optical logic étalons operating in the 1.55‐μm wavelength region using InGaAs/InP multiple quantum well (MQW) structures. These étalons have low‐energy requirements with several nanosecond recovery times, exhibit high on/off contrast (>20:1 if desired) with large on‐state transmission (>40%), and have signal gain, thus making them possible to cascade. For example, we have performed gating using 6 pJ input energy with 5:1 contrast and gain about 2 at 100 MHz operating frequency. These étalons also show optical bistability. The nonlinear coefficients for the InGaAs/InP MQW’s deduced from experimental results are found to be on the same order as those for GaAs/GaAlAs MQW’s.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Pc Optical bistability, multistability, and switching, including local field effects
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Observation of large quadratic electro‐optic effect in GaAs/AlGaAs multiple quantum wells

Thomas H. Wood, Robert W. Tkach, and Andrew R. Chraplyvy

Appl. Phys. Lett. 50, 798 (1987); http://dx.doi.org/10.1063/1.98048 (3 pages) | Cited 24 times

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We simultaneously measure the intensity modulation level and the optical spectrum of the output of a multiple quantum well modulator, and use these data to deduce the electro‐optic coefficients. The effect is quadratic, with a measured ‖s33‖=4.6×10−13 cm2/V2 at a wavelength 12 meV below the band gap. This is approximately 800 times the coefficient measured further from the band gap. We are able to achieve a fractional change in the refractive index of 3.7%. Despite the size of this effect, when we operate the device as an intensity modulator, we observe a linewidth enhancement factor of α=1.0, which means the chirp induced in the device’s output will be small.
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85.60.-q Optoelectronic devices
78.20.Jq Electro-optical effects
42.79.Hp Optical processors, correlators, and modulators
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Nonlinear coupling of waveguide modes

Yaron Silberberg and George I. Stegeman

Appl. Phys. Lett. 50, 801 (1987); http://dx.doi.org/10.1063/1.98049 (3 pages) | Cited 45 times

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We show that the nonlinear coupling between two waveguide modes can lead to both power exchange and nonlinear phase shifting between the modes. New applications of nonlinear phase shifting to all‐optical devices are described.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Gn Optical waveguides and couplers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.82.-m Integrated optics

Absorption at 248 nm by Kr2F∗

A. W. McCown

Appl. Phys. Lett. 50, 804 (1987); http://dx.doi.org/10.1063/1.98050 (3 pages) | Cited 4 times

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The cross section for absorption of 248 nm radiation by the lowest bound electronic excited (42Γ) of the rare gas halide trimer Kr2F∗ has been measured to be 7.2×10−19 cm2. This is an order of magnitude smaller than the value which is typically used in KrF kinetics codes [cf. T. H. Johnson and A. M. Hunter, J. Appl. Phys. 51, 2406 (1980)]. The lower absorption cross section leaves unaccounted the observed nonsaturable absorption in long pulse KrF lasers.
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33.80.Gj Diffuse spectra; predissociation, photodissociation
42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.80.Wz Other multiphoton processes
33.80.Be Level crossing and optical pumping

Optically pumped mode‐locked PbS1−xSex lasers

K. Vilhelmsson, B. Valk, M. M. Salour, and T. K. Chu

Appl. Phys. Lett. 50, 807 (1987); http://dx.doi.org/10.1063/1.98051 (2 pages)

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We report the first optically pumped, mode‐locked PbS1−xSex (x=0 and 0.3), semiconductor lasers with an external cavity. The materials lased at 4.1 and 4.8 μm, respectively. The output average power was estimated at about 1 mW when pumped with 250 mW average power from a mode‐locked Nd‐YAG laser. The demonstrated PbS1−xSex lasers were operated cw mode locked at a temperature of 8 K. Lasing was observed at temperatures up to 150 K. However, above 50 K it was necessary to chop the pump beam in order to maintain lasing. By varying the stoichiometric composition x, lasing throughout the wavelength span from 4 to 8 μm can be accomplished.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Improved bremsstrahlung radiation uniformity from an indented‐anode diode

T. W. L. Sanford, J. A. Halbleib, J. W. Poukey, T. P. Wright, C. E. Heath, R. Mock, P. W. Spence, G. Proulx, V. Bailey, J. Fockler, and H. Kishi

Appl. Phys. Lett. 50, 809 (1987); http://dx.doi.org/10.1063/1.98052 (3 pages) | Cited 6 times

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Use of an indented anode in a cylindrical‐cathode, planar anode diode placed at the exit of a coaxial magnetically insulated transmission line on the helia accelerator results in improved radiation uniformity. Measurements of the uniformity made on the accelerator at 3 MV, 150 kA are compared and shown to agree with theoretical calculations. The advantage of this scheme over that of the planar anode is that the diode impedance, pinch angle, and radial impact position at the anode can be partially decoupled.
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41.60.-m Radiation by moving charges
52.59.Mv High-voltage diodes
29.20.Ej Linear accelerators

Graphite picosecond optoelectronic opening switch

E. A. Chauchard, Chi H. Lee, and C. Y. Huang

Appl. Phys. Lett. 50, 812 (1987); http://dx.doi.org/10.1063/1.98262 (3 pages) | Cited 9 times

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Highly oriented pyrolytic graphite, a conductive material in the dark, is found to exhibit a high resistivity when illuminated by intense laser light. Its operation as an opening switch with a switching time under 1 ns is demonstrated.
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84.32.Dd Connectors, relays, and switches
72.40.+w Photoconduction and photovoltaic effects
85.60.-q Optoelectronic devices

Exceptionally pronounced redistribution of silver in oxygen bombarded silicon

K. Wittmaack and N. Menzel

Appl. Phys. Lett. 50, 815 (1987); http://dx.doi.org/10.1063/1.98053 (3 pages) | Cited 18 times

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Silicon samples covered with thin layers of silver were bombarded with normally incident 10 keV O+2 ions. Using high‐resolution (∼2 nm) Rutherford backscattering spectrometry the following stages of beam induced Ag relocation could be identified: (1) rapid incorporation of surface atoms into the bulk of the sample, (2) strong bombardment induced mixing, (3) pronounced profile broadening at high levels of oxygen implantation, and (4) very effective segregation of Ag atoms at the SiO2/Si interface. Upon completion of beam induced oxide formation about 40% of the initial Ag coverage is still retained in the sample. At higher bombardment fluences the backscattering data and secondary ion mass spectrometry measurements reveal a vanishingly small partial sputtering yield for Ag atoms.
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68.35.Fx Diffusion; interface formation
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
66.30.J- Diffusion of impurities
68.35.Dv Composition, segregation; defects and impurities

Tellurium thin‐film transistor deposited on polyester film having plasma polymerized films on double‐layered gate insulators

H. Hirai, H. Sekiguchi, S. Miyata, and S. Kobayashi

Appl. Phys. Lett. 50, 818 (1987); http://dx.doi.org/10.1063/1.98054 (3 pages) | Cited 4 times

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A tellurium thin‐film transistor deposited on polyester film having plasma polymerized films as double‐layered gate insulators has been successfully fabricated. Films of plasma polymerized acetonitrile and benzene were used for the insulator and passivation films of the thin‐film transistor, respectively. The attained drain current on‐off ratio was about 1×103 at a current density of 0.8 mA/mm2. These values qualify the device to drive the pixels of a twisted nematic liquid crystal display panel.
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85.30.Tv Field effect devices
73.61.Ng Insulators
81.05.Qk Reinforced polymers and polymer-based composites
85.60.Pg Display systems

Ultrafast absorption recovery due to stimulated emission in GaAs/AlGaAs multiple quantum wells

J. Dubard, J. L. Oudar, F. Alexandre, D. Hulin, and A. Orszag

Appl. Phys. Lett. 50, 821 (1987); http://dx.doi.org/10.1063/1.98055 (3 pages) | Cited 10 times

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See Also: Erratum

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Subpicosecond time‐resolved absorption spectra have revealed carrier lifetimes as short as 10 ps in low‐temperature GaAs/AlGaAs multiple quantum well structures (MQWS’s) due to the large stimulated recombination rate caused by amplified spontaneous luminescence guided along the MQW’s. Time‐resolved detection of the edge‐emitted luminescence with a streak camera fully confirms the occurrence of a fast radiative recombination associated with substantial light amplification.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.45.+h Stimulated emission

(AlAs)0.5(GaAs)0.5 fractional‐layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor deposition

Takashi Fukui and Hisao Saito

Appl. Phys. Lett. 50, 824 (1987); http://dx.doi.org/10.1063/1.98056 (3 pages) | Cited 109 times

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(AlAs)0.5(GaAs)0.5 fractional‐layer superlattices with a new periodicity perpendicular to the growth direction was successfully grown by metalorganic chemical vapor deposition on (001) GaAs substrates slightly misoriented toward [110]. The atomic structures were analyzed by x‐ray superlattice satellite diffraction. Superlattice periods were exactly the same as the mean distance of each atomic step on the (001) vicinal surface. The results indicate that lateral growth from nucleation at the step edge is the dominant process compared with the two‐dimensional nucleation on atomically flat terraces.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Oxidation behavior of Au‐Si films

C. A. Hewett and S. S. Lau

Appl. Phys. Lett. 50, 827 (1987); http://dx.doi.org/10.1063/1.98057 (3 pages) | Cited 11 times

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We have investigated the oxidation behavior of co‐deposited Au‐Si films at low temperatures (∼200 °C). Alloys spanning the Au‐Si phase diagram have been examined. Films with greater than 40 at. % Au were found to oxidize forming SiO2, while films with less than 40 at. % Au were found to be relatively stable in an oxidizing ambient. This phenomenon was used to form Au lines with a self‐passivating SiO2 coating. The resistivity of these lines is estimated to be 6–10 μΩ cm.
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81.05.Bx Metals, semimetals, and alloys
85.40.Bh Computer-aided design of microcircuits; layout and modeling
73.61.At Metal and metallic alloys
68.55.-a Thin film structure and morphology

Photoacoustic optical and thermal characterization of Si and GaAs ion implanted layers

U. Zammit, M. Marinelli, F. Scudieri, and S. Martellucci

Appl. Phys. Lett. 50, 830 (1987); http://dx.doi.org/10.1063/1.98058 (3 pages) | Cited 24 times

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The values of the thermal conductivity and of the optical absorption coefficient of ion implanted Si and GaAs have been measured in a nondestructive way by photoacoustic measurements. The values obtained for Si are in good agreement with those found in literature, while no data have been found for ion implanted GaAs as a function of the implanted ions dose. The thermal conductivity value for the implanted layers is more than two orders of magnitude lower than the ones for the respective crystalline material. The implanted ion dose dependence of the two parameters is reported for GaAs.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Nonradiative carrier recombination processes of n‐Hg1−xCdxTe as determined by magnetic quantum oscillations

K. Takita, T. Ippōshi, and K. Masuda

Appl. Phys. Lett. 50, 833 (1987); http://dx.doi.org/10.1063/1.98059 (3 pages) | Cited 4 times

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A mew method to determine the dominant process of nonradiative carrier recombination is proposed and demonstrated for n‐Hg1−xCdxTe (x≂0.2). This method is an application of the magnetic quantum oscillations of high electric field magnetoresistance which were observed successfully in a wide temperature range from 4.2 to 100 K by using a pulse technique and a second derivatives method, where Shockley–Read recombination as well as Auger recombination could be observed as an oscillatory behavior. The dominant origins of the oscillations could be clearly determined from the temperature dependence of the peak positions. Measurement and analysis were performed for a variety of samples with various carrier concentrations n and various electron mobilities μH (n=3×1014–2×1015 cm−3, μH=8×103–3×105 cm2/V s at 4.2 K). A competitive behavior of Shockley–Read and Auger processes and its sample dependence were clearly demonstrated.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.My Galvanomagnetic and other magnetotransport effects

Continuous (300 K) photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on strained‐layer GaAs on Si

R. W. Kaliski, N. Holonyak, K. C. Hsieh, D. W. Nam, J. W. Lee, H. Shichijo, R. D. Burnham, J. E. Epler, and H. F. Chung

Appl. Phys. Lett. 50, 836 (1987); http://dx.doi.org/10.1063/1.98006 (3 pages) | Cited 14 times

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Data are presented demonstrating continuous (cw) room‐temperature photopumped laser operation of an AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) grown on a Si substrate. The QWH is grown in a two‐step process with first the GaAs grown on the Si substrate by molecular beam epitaxy (MBE) and second the QWH grown by metalorganic chemical vapor deposition (MOCVD). The MBE GaAs contains a thin 600‐Å layer at the Si/GaAs interface that is rich in defects, ‘‘absorbs’’ much of the mismatch, and provides a good surface (specular surface) for the MOCVD growth of the QWH. Although cw 300 K laser operation is obtained, it occurs at high threshold and is short lived, agreeing with earlier results on the cw 300 K laser operation of mismatched III‐V QWH’s.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology

Optical studies of excitons in Ga0.47In0.53As/InP multiple quantum wells

D. J. Westland, A. M. Fox, A. C. Maciel, J. F. Ryan, M. D. Scott, J. I. Davies, and J. R. Riffat

Appl. Phys. Lett. 50, 839 (1987); http://dx.doi.org/10.1063/1.98007 (3 pages) | Cited 17 times

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We report optical absorption and photoluminescence measurements of excitons in Ga0.47In0.53As/InP multiple quantum wells grown by metalorganic chemical vapor deposition. At 4 K the luminescence linewidth for n=1 heavy‐hole excitons is measured to be 7 meV for a 30‐period structure with wells of width 154 Å. The absorption spectrum at low temperature shows four peaks which we assign to confined heavy‐hole excitons. A theoretical calculation of the energies of these states indicates that the ratio of the conduction‐band to valence‐band energy discontinuities is 45:55.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Quadratic electro‐optic effect due to the quantum‐confined Stark effect in quantum wells

Joseph S. Weiner, David A. B. Miller, and Daniel S. Chemla

Appl. Phys. Lett. 50, 842 (1987); http://dx.doi.org/10.1063/1.98008 (3 pages) | Cited 82 times

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We have performed a semi‐empirical calculation of the refractive index changes induced by a perpendicular electric field in quantum wells. This calculation is based on experimental electroabsorption data, together with absorption sum rules that have recently been developed. We find good agreement with published experimental results. Our results are important to the development of electro‐optic and high‐speed electroabsorption quantum well devices.
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78.20.Jq Electro-optical effects
42.65.Pc Optical bistability, multistability, and switching, including local field effects
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Resonant tunneling in a GaAs/AlGaAs barrier/InGaAs quantum well heterostructure

M. A. Reed and J. W. Lee

Appl. Phys. Lett. 50, 845 (1987); http://dx.doi.org/10.1063/1.98009 (3 pages) | Cited 18 times

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Resonant tunneling through a GaAs contact/double AlGaAs barrier/single InGaAs quantum well strained‐layer heterostructure was investigated. The structure exhibits negative differential resistance up to 275 K due to tunneling through the first excited state of the quantum well. Comparison of the observed peak positions with theory indicates that the conduction‐band offset of the AlGaAs/InGaAs heterojunction is nearly 100%. Using the magnetic field dependence of the current‐voltage characteristics, we have measured the effective mass of an electron while transiting a multicomponent quantum well tunneling structure. An effective mass for electrons in the InGaAs quantum well of approximately half the bulk effective mass is obtained.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Molecular beam epitaxial growth and characterization of the dilute magnetic semiconductor Zn1−xFexSe

B. T. Jonker, J. J. Krebs, S. B. Qadri, and G. A. Prinz

Appl. Phys. Lett. 50, 848 (1987); http://dx.doi.org/10.1063/1.98010 (3 pages) | Cited 37 times

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We report the growth by molecular beam epitaxy of the dilute magnetic semiconductor Zn1−xFexSe on GaAs(100) substrates. The epilayers were characterized in situ by reflection high‐energy electron diffraction and Auger electron spectroscopy, and by x‐ray θ‐2θ and rocking curve measurements. We obtain the variation of lattice parameter and optical band gap for 0≤x≤0.22. Both increase linearly with Fe concentration in this range, but the increase is much less than that reported for Zn1−xMnxSe.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
78.66.-w Optical properties of specific thin films
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Nucleation of GaAs on Si: Experimental evidence for a three‐dimensional critical transition

R. Hull and A. Fischer‐Colbrie

Appl. Phys. Lett. 50, 851 (1987); http://dx.doi.org/10.1063/1.98011 (3 pages) | Cited 92 times

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The initial nucleation and growth stages of ultrathin GaAs films grown by molecular beam epitaxy upon Si(100) substrates are studied by high‐resolution transmission electron microscopy. It is found that for a growth temperature of 405 °C, films initially nucleate as islands associated with steps on the substrate surface. In the earliest stages of growth, these islands are strained coherently to the substrate lattice, i.e., are free of misfit dislocations. As the islands grow, they become faulted. The transition from strained to dislocated states is shown to be a function of both the lateral and vertical island dimensions.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.B- Structure of clean surfaces (and surface reconstruction)

Reactively sputtered RuO2 diffusion barriers

E. Kolawa, F. C. T. So, E. T‐S. Pan, and M‐A. Nicolet

Appl. Phys. Lett. 50, 854 (1987); http://dx.doi.org/10.1063/1.98012 (2 pages) | Cited 64 times

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The thermal stability of reactively sputtered RuO2 films is investigated from the point of view of their application as diffusion barriers in silicon contact metallizations with an Al overlayer. Backscattering spectra of Si/RuO2/Al samples and electrical measurements on shallow junction diodes with 〈Si〉/TiSi2.3/RuO2/Al contacts both show that RuO2 films are effective diffusion barriers between Al and Si for 30‐min annealing at temperatures as high as 600 °C.
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68.60.Dv Thermal stability; thermal effects
68.35.Fx Diffusion; interface formation
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Kk Junction diodes
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