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6 Apr 1987

Volume 50, Issue 14, pp. 863-942

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Reduction of spectral linewidth in AlGaAs/GaAs distributed feedback lasers by a multiple quantum well structure

Susumu Noda, Keisuke Kojima, Kazuo Kyuma, Koichi Hamanaka, and Takashi Nakayama

Appl. Phys. Lett. 50, 863 (1987); http://dx.doi.org/10.1063/1.98014 (3 pages) | Cited 6 times

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We demonstrate the reduction of the spectral linewidth in AlGaAs/GaAs distributed feedback lasers by a multiple quantum well structure for the first time. The spectral linewidth‐output power product was 54 MHz mW and was eight times smaller than that of conventional double heterostructure distributed feedback lasers. The narrowest spectral linewidth was 10.5 MHz at 5 mW.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Impurity‐induced disorder‐delineated optical waveguides in GaAs‐AlGaAs superlattices

F. Julien, P. D. Swanson, M. A. Emanuel, D. G. Deppe, T. A. DeTemple, J. J. Coleman, and N. Holonyak

Appl. Phys. Lett. 50, 866 (1987); http://dx.doi.org/10.1063/1.98015 (3 pages) | Cited 28 times

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Layer intermixing in GaAs‐AlGaAs superlattices achieved by Zn thermal diffusion has been used to fabricate buried channel optical waveguides. Linear waveguides with small, abrupt bends were made and light was seen to be transmitted through these for bend angles up to 7.5 degrees corresponding to an effective index of refraction difference of 0.9% for a 50% average Al composition of the layers bounding the superlattice. For radiation between the band gap of bulk GaAs (870 nm) and the effective band gap of a 10‐nm GaAs quantum well (840 nm), the 3‐mm‐long waveguides appeared to be semitransparent suggesting a possible use in planar, buried channel all‐semiconductor integrated optoelectronics.
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42.79.Gn Optical waveguides and couplers
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
85.60.-q Optoelectronic devices

High‐power (710 mW cw) single‐lobe operation of broad area AlGaAs double heterostructure lasers grown by metalorganic chemical vapor deposition

Masamichi Sakamoto and Yoji Kato

Appl. Phys. Lett. 50, 869 (1987); http://dx.doi.org/10.1063/1.98016 (2 pages) | Cited 12 times

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Broad area, conventional double heterostructure lasers were fabricated by metalorganic chemical vapor deposition. Continuous wave output power level of 710 mW and stable, single‐lobed far‐field patterns with a beam divergence as narrow as 2.1° (2.2 times diffraction limit) at 50 mW and 2.9° at 200 mW for a 50‐μm‐wide laser were obtained.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Detection of surface director reorientation in a nematic liquid crystal

K. R. Welford and J. R. Sambles

Appl. Phys. Lett. 50, 871 (1987); http://dx.doi.org/10.1063/1.98017 (3 pages) | Cited 31 times

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The surface plasmon polariton is used to investigate the nematic director reorientation close to the director aligning layer. This has resulted in the determination of the surface anchoring energy and the realization that surface effects are significant even when surface anchoring is strong. A consequence of this is that existing data for the physical parameters of the nematic material may suffer systematic errors.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.66.-w Optical properties of specific thin films
42.70.Df Liquid crystals
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser

T. R. Chen, K. Utaka, Y. H. Zhuang, Y. Y. Liu, and A. Yariv

Appl. Phys. Lett. 50, 874 (1987); http://dx.doi.org/10.1063/1.98018 (3 pages) | Cited 5 times

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A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro‐optical switching were demonstrated.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Steady‐state self‐consistent analysis of diode‐laser arrays

Tribhawan Kumar

Appl. Phys. Lett. 50, 877 (1987); http://dx.doi.org/10.1063/1.98019 (3 pages)

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A diode‐laser array model, solving the two‐dimensional Laplace equation in the passive layer and the carrier diffusion equation in the active layer in a self‐consistent manner, is presented. The model is general and does not make use of the usual one‐dimensional approximation to the current spreading problem. The beam‐propagation method used in solving the wave equation eases the inclusion of any axial variations.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Coherent coupling of pulsed dye oscillators using nonlinear phase conjugation

Jeffrey O. White, George C. Valley, and Ross A. McFarlane

Appl. Phys. Lett. 50, 880 (1987); http://dx.doi.org/10.1063/1.98020 (3 pages) | Cited 8 times

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We have obtained coherent operation of multiple pulsed dye oscillators by using a single phase conjugate mirror as a common end mirror for up to three physically distinct cavities. The phase conjugate mirror operates via the photorefractive effect in a crystal of BaTiO3, through a four‐wave mixing process that requires no external pumping beams. The system has been operated in both a narrow‐band (0.05 nm) and a broadband (0.25 nm) configuration.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems
78.20.Jq Electro-optical effects

Longitudinal discharge XeCl excimer laser with automatic UV preionization

Hideo Furuhashi, Mineo Hiramatsu, and Toshio Goto

Appl. Phys. Lett. 50, 883 (1987); http://dx.doi.org/10.1063/1.98021 (3 pages) | Cited 2 times

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A longitudinal discharge XeCl 308‐nm excimer laser operated with automatic spark UV preionization is reported. Laser oscillation has been obtained using a four‐segmented longitudinal discharge tube of 260 mm length and 4 mm inner diameter and employing a capacitor transfer circuit with commercially available doorknob ceramic capacitors. Spark UV preionization has been found to increase the laser output energy.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Ultrafast light‐controlled optical‐fiber modulator

N. J. Halas, D. Krökel, and D. Grischkowsky

Appl. Phys. Lett. 50, 886 (1987); http://dx.doi.org/10.1063/1.98022 (3 pages) | Cited 15 times

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We report the ultrafast operation of a light‐controlled optical‐fiber modulator, driven by subpicosecond, compressed, and amplified (6000 Å) dye laser pulses, controlling frequency‐doubled (5320 Å) yttrium aluminum garnet laser pulses. The operation of the modulator is based on the optical Kerr effect, and its main component is 7 mm of single‐mode optical fiber. Using this system as a light‐controlled shutter, we produced either 0.4 ps green light pulses or 0.5 ps holes on the much longer duration second harmonic pulses.
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42.79.Hp Optical processors, correlators, and modulators
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.81.Wg Other fiber-optical devices

1‐ns pulse‐generating, compact, low‐pressure N2 lasers

Kazuhito Ishikawa, Shinzo Muto, and Hidenori Matsuzawa

Appl. Phys. Lett. 50, 889 (1987); http://dx.doi.org/10.1063/1.98023 (2 pages) | Cited 7 times

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Effects of a pressurized spark switch on N2 laser output have been observed optically with quartz fibers. The output power increased with decreasing the gap of the spark switch while keeping pgd=0.51 kg/cm (pg is the N2 gas pressure in the spark switch and d is the gap distance) and pN2=40 Torr (pN2 is the pressure of the laser medium gas). One nanosecond pulses with peak powers of 120 kW have been generated for the first time for low‐pressure operating N2 lasers.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Mg Arcs; sparks; lightning; atmospheric electricity

Novel laser diagnostic for mercury rare gas low pressure discharges

Philip E. Moskowitz

Appl. Phys. Lett. 50, 891 (1987); http://dx.doi.org/10.1063/1.98024 (3 pages) | Cited 6 times

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Knowledge of the Hg(3P1) spatial distribution in Hg rare gas low pressure discharges is important for understanding radiation transport, and aids in the formulation of discharge models for fluorescent lamps. We report on a novel single laser, two intersecting beams technique, which, for the first time, yields pinpoint information on the radial density profile of excited state mercury in the discharge positive column. Advantages over conventional single beam absorption are discussed, and preliminary data for a discharge containing one isotope (198Hg) of mercury and 2.5 Torr argon are presented.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.80.Dy Low-field and Townsend discharges
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.80.Yr Discharges for spectral sources (including inductively coupled plasma)

Fluorine distributions in a chemical vapor deposited tungsten silicide/polycrystalline silicon composite gate structure

Masanori Fukumoto and Takashi Ohzone

Appl. Phys. Lett. 50, 894 (1987); http://dx.doi.org/10.1063/1.98025 (3 pages) | Cited 13 times

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A tungsten silicide/polycrystalline silicon composite gate structure has been fabricated in which tungsten silicide layers on polycrystalline silicon have been deposited by the low‐temperature chemical vapor deposition method (at 360 °C) using a WF6/SiH4 gas mixture. The fluorine distributions in this structure have been studied by secondary ion mass spectrometry. In samples with as‐deposited tungsten silicide, it has been confirmed clearly that almost all of the fluorine resides in the silicide layer. After high‐temperature annealing (above 950 °C), however, fluorine is found to diffuse easily into the gate SiO2 through the polycrystalline silicon, that is, the gate oxide has been changed into the fluorine‐doped oxide.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Fx Diffusion; interface formation
68.35.Dv Composition, segregation; defects and impurities
66.30.J- Diffusion of impurities

Studies of texture in thin films using synchrotron radiation and energy dispersive diffraction

M. Hart, W. Parrish, and N. Masciocchi

Appl. Phys. Lett. 50, 897 (1987); http://dx.doi.org/10.1063/1.98026 (3 pages) | Cited 2 times

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High resolution, energy dispersive patterns are obtained with parallel beam x‐ray optics, synchrotron radiation, a step scanning incident beam channel monochromator, and independently selectable specimen and detector angles, which are fixed during the scan. This permits decoupling of the specimen and detector geometry (which would cause defocusing in conventional methods) and makes it possible to measure the intensities at several incidence angles to determine the preferred orientation of the crystallites in a thin film. The method is illustrated by patterns of a Pd/Xe thin film.
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68.55.-a Thin film structure and morphology
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.

Arsenic‐doped p‐CdTe layers grown by organometallic vapor phase epitaxy

S. K. Ghandhi, N. R. Taskar, and I. B. Bhat

Appl. Phys. Lett. 50, 900 (1987); http://dx.doi.org/10.1063/1.98027 (3 pages) | Cited 23 times

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Arsenic‐doped CdTe layers have been grown by organometallic vapor phase epitaxy in an atmospheric pressure reactor using arsine as the dopant gas. Doping levels above 2×1017 cm−3 have been reproducibly obtained for the first time in an epitaxial growth system, with a doping uniformity of ±20% over 1.5×1.5 cm. This is a much higher level of doping than usually possible in bulk growth systems. The layers were characterized by photoluminescence measurements at 12 K and by Hall measurements as a function of temperature. The ionization energy of the As acceptor was found to be about 62±4 meV from transport measurements. It was also shown that the electronic activity of the As incorporated is a function of the dimethylcadmium to diethyltelluride partial pressure ratio in the gas phase.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
78.55.Et II-VI semiconductors

Relaxation of stresses in CdTe layers grown by molecular beam epitaxy

C. Fontaine, J. P. Gailliard, S. Magli, A. Million, and J. Piaguet

Appl. Phys. Lett. 50, 903 (1987); http://dx.doi.org/10.1063/1.98261 (3 pages) | Cited 15 times

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X‐ray diffraction has been used to study CdTe layers grown by molecular beam epitaxy on Cd0.96Zn0.04Te or InSb substrates with either (111) or (001) orientation. The layers are elastically strained up to a critical thickness, above which misfit dislocations are generated. Our experimental determinations of the critical thickness and the relaxation of the stress while increasing the layer thickness are different from predictions of the existing models. We present a discussion of relaxation based on the determination of the minimum energy state of the layer for a given thickness. We show that above the critical thickness, the layer relaxes so that the product of the stress by the thickness remains constant. This constant has been experimentally determined for both (111) and (001) orientation.
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68.60.Bs Mechanical and acoustical properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Interface properties for GaAs/InGaAlP heterojunctions by the capacitance‐voltage profiling technique

Miyoko O. Watanabe and Yasuo Ohba

Appl. Phys. Lett. 50, 906 (1987); http://dx.doi.org/10.1063/1.98028 (3 pages) | Cited 113 times

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The conduction‐band discontinuity ΔEc and interface charge density σ have been studied for GaAs/In0.5(Ga1−xAlx)0.5P heterojunctions, prepared by metalorganic chemical vapor deposition. The dependences of ΔEc and σ on Al composition x were investigated for x from 0 to 1. The In0.5Al0.5P/ In0.5Ga0.5P heterojunction was also examined. The results suggest that the valence‐band discontinuity ΔEv for GaAs/In0.5(Ga1−xAlx)0.5P is a linear function of x and is larger than ΔEc, being in reasonable agreement with results on the InAlP/InGaP heterojunction. The σ values for GaAs/InGaAlP were found to be one order of magnitude larger than those for GaAs/AlGaAs and InAlP/InGaP heterojunctions.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors

Improved flatness in GaAs/AlGaAs heterointerfaces grown by flow‐rate modulation epitaxy

Naoki Kobayashi and Yoshiji Horikoshi

Appl. Phys. Lett. 50, 909 (1987); http://dx.doi.org/10.1063/1.98029 (3 pages) | Cited 10 times

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This letter deals with the atomically flat interfaces at GaAs/AlGaAs heterojunctions grown by a modified metalorganic chemical vapor deposition, flow‐rate modulation epitaxy. Single quantum wells show low‐temperature photoluminescence with narrower linewidths than those grown by conventional metalorganic chemical vapor deposition. An x‐ray diffraction spectrum of (GaAs)2 (AlAs)2 superlattices exhibits no forbidden (003) and (001) diffractions, suggesting that the interfaces are fairly flat.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation
78.55.Cr III-V semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Degradation of band‐gap photoluminescence in GaAs

D. Guidotti, Eram Hasan, H. J. Hovel, and Marc Albert

Appl. Phys. Lett. 50, 912 (1987); http://dx.doi.org/10.1063/1.98030 (3 pages) | Cited 26 times

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Evidence is presented to show that the degradation of near‐band‐gap photoluminescence emission in GaAs with time of exposure to low power, cw laser excitation can be attributed to a surface mechanism that is independent of surface oxidation and may involve an interaction between crystal point defects and the photogenerated electron‐hole plasma near the surface.
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78.55.Cr III-V semiconductors

Tunable electroabsorption in gallium arsenide doping superlattices

C. J. Chang‐Hasnain, G. Hasnain, N. M. Johnson, G. H. Dohler, J. N. Miller, J. R. Whinnery, and A. Dienes

Appl. Phys. Lett. 50, 915 (1987); http://dx.doi.org/10.1063/1.98031 (3 pages) | Cited 6 times

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Tuning of the optical absorption coefficient by electrical bias in doping superlattices (n‐i‐p‐i crystals) is demonstrated for the first time by both photoconductivity and transmission measurements at room temperature. The absorption coefficient at 1.04 μm obtained from the photoconductivity measurement varies by a factor of 240 when the p‐n junction bias is changed from 0.4 to −1.5 V. A change of transmission up to 22% at 0.89 μm wavelength through a 2.1‐μm‐thick n‐i‐p‐i crystal is achieved by varying bias merely between 0.6 and −2.0 V. Moreover, the change of transmission is nearly linear with p‐n junction bias.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.50.Pz Photoconduction and photovoltaic effects
42.60.Fc Modulation, tuning, and mode locking
85.60.-q Optoelectronic devices

Hydrogen in crystalline silicon: A deep donor?

M. Capizzi and A. Mittiga

Appl. Phys. Lett. 50, 918 (1987); http://dx.doi.org/10.1063/1.98032 (3 pages) | Cited 64 times

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An analysis of the hydrogen concentration profiles obtained from secondary ion mass spectrometry in boron‐doped silicon points to a deep donor hydrogen state located ∼0.1 eV above the Fermi level for intrinsic material. The theoretical model takes into account both neutral and ionized hydrogen diffusion, the latter enhanced by a built‐in electric field associated with the hydrogen doping gradient. The activation energies for the two diffusion processes are ∼1.2 and ∼0.8 eV, respectively. A formerly reported discrepancy between low‐ and high‐temperature results is lifted.
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71.55.Ht Other nonmetals
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities

Passivation of Si donors and DX centers in AlGaAs by hydrogen plasma exposure

J. C. Nabity, Michael Stavola, J. Lopata, W. C. Dautremont‐Smith, C. W. Tu, and S. J. Pearton

Appl. Phys. Lett. 50, 921 (1987); http://dx.doi.org/10.1063/1.97980 (3 pages) | Cited 63 times

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The effect of hydrogen plasma exposure upon shallow donors and DX centers in silicon‐doped AlGaAs has been investigated by deep level transient spectroscopy and capacitance versus voltage measurements. Following exposure to a hydrogen plasma for 30 min at 250 °C, the shallow level and DX center activity are reduced by an order of magnitude throughout a 1.6‐μm‐thick layer of molecular beam epitaxially grown AlGaAs. Isochronal annealing studies showed that both the shallow donor and DX center electrical activity recover together at about 400 °C. The shallow donor recovery mimics the behavior of donors in GaAs and has an activation energy of 2.0 eV. The DX center recovery shows a distribution of activation energies centered at 2.1 eV with a full width at half‐maximum of 0.25 eV. The hydrogen passivation chemistry of DX centers and shallow donors support models in which isolated Si impurities give rise to both DX behavior and shallow levels.
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71.55.Eq III-V semiconductors
81.65.-b Surface treatments

Optical properties of HgTe‐CdTe superlattices

D. J. Leopold, M. L. Wroge, and J. G. Broerman

Appl. Phys. Lett. 50, 924 (1987); http://dx.doi.org/10.1063/1.97981 (3 pages) | Cited 22 times

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Optical transmittance spectra of HgTe‐CdTe superlattices grown on GaAs substrates by molecular beam epitaxy were measured as a function of temperature between 40 and 360 K. Low substrate temperatures (150–170 °C) were required during growth to minimize interdiffusion and improve crystal quality. The highest quality superlattices exhibit sharp absorption edges with positive temperature coefficients in reasonable agreement with theory. In addition, many superlattices exhibit higher energy absorption features with temperature dependences similar to the lower energy fundamental absorption edge. The higher energy absorption features are associated with optical transitions involving higher order (n=2,3) superlattice minibands.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.35.Fx Diffusion; interface formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Molecular beam epitaxial growth and optical properties of InAs1−xSbx in 8–12 μm wavelength range

M. Y. Yen, B. F. Levine, C. G. Bethea, K. K. Choi, and A. Y. Cho

Appl. Phys. Lett. 50, 927 (1987); http://dx.doi.org/10.1063/1.97982 (3 pages) | Cited 39 times

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We have successfully grown InAs1−xSbx by molecular beam epitaxy over the complete compositional range of 0<x<1 on InAs substrates. The band gaps have been measured using optical absorption and cut‐off wavelengths as long as 12.5 μm have been obtained.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Resonant tunneling spectroscopy of hot minority electrons injected in gallium arsenide quantum wells

Federico Capasso, Susanta Sen, Alfred Y. Cho, and Albert L. Hutchinson

Appl. Phys. Lett. 50, 930 (1987); http://dx.doi.org/10.1063/1.97983 (3 pages) | Cited 9 times

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We have employed a new electron spectroscopy technique based on resonant tunneling to study hot minority‐electron transport in GaAs quantum wells, following ballistic injection. Direct information on the momentum and energy distribution perpendicular to the heterointerfaces is obtained from the measured resonant tunneling current without requiring derivative techniques. For injection energies of ≂0.2 eV, strong energy and momentum relaxation occurs over distances≲250 Å making impossible the observation of minority‐electron ballistic transport in heavily doped (>1018 cm−3) GaAs. The energy distribution is found to be strongly non‐Maxwellian; from our data we can infer electron scattering times ≤10−14 which are consistent with recent evidence of strong electron‐hole scattering in GaAs quantum wells.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Dn Low-field transport and mobility; piezoresistance
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Formation of aluminum silicide between two layers of amorphous silicon

H. T. G. Hentzell, A. Robertsson, L. Hultman, G. Shaofang, S.‐E. Hörnström, and P. A. Psaras

Appl. Phys. Lett. 50, 933 (1987); http://dx.doi.org/10.1063/1.97984 (2 pages) | Cited 26 times

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Thin‐film structures of amorphous Si/Al/amorphous Si were deposited consecutively without breaking the vacuum. During annealing to 440 K, Al reacts with Si to form a homogeneous compound layer between the two a‐Si layers. This compound has a unique and well‐defined structure, different from both Al and Si although some similarities exist. The Al silicide observed is stable up to 575 K, at which temperature it dissociates when a‐Si crystallizes.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.Nq Composition and phase identification
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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