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20 Apr 1987

Volume 50, Issue 16, pp. 1027-1112

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Generation of optical solitons in the wavelength region 1.37–1.49 μm

B. Zysset, P. Beaud, and W. Hodel

Appl. Phys. Lett. 50, 1027 (1987); http://dx.doi.org/10.1063/1.97959 (3 pages) | Cited 15 times

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First‐order soliton pulses of 77–250 fs duration have been generated in the wavelength region from 1.37 to 1.49 μm. These solitons are formed by transmitting dye laser pulses at 1.34 μm of 1 ps duration and peak intensity of ≊0.66 GW/cm2 through optical single mode fibers. Soliton narrowing and soliton self‐frequency shift are the dominant shaping mechanisms.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.81.Dp Propagation, scattering, and losses; solitons

Temporal measurements of photofragment attenuation at 248 nm in the laser ablation of polyimide in air

G. Koren

Appl. Phys. Lett. 50, 1030 (1987); http://dx.doi.org/10.1063/1.97960 (3 pages) | Cited 25 times

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A 248‐nm laser pulse of 35 ns duration was split spatially into two beams: a strong beam used to completely ablate in a single pulse 1000‐ and 5000‐Å‐thick polyimide films on fused silica substrates, and a weak, time‐delayed probe beam directed almost perpendicularly onto the sample through the ablated fragments in order to measure their transmission versus time. When ablating the 1000‐Å‐thick film at 1.1 J/cm2, a weak attenuation of the probe beam with a maximum value of 10–12% was observed during the laser pulse. Ablation of the 5000‐Å‐thick film at 4.2 J/cm2 showed a strong attenuation of 83% which lasted for 90 ns from the beginning of the ablating laser pulse and then dropped to 50% at 130 ns. These results indicate increased attenuation of the laser beam as the laser fluence increases, thus explaining the reduced ablation efficiency at high fluences.
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79.20.Ds Laser-beam impact phenomena
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments

Room‐temperature continuous‐wave operation of a GaInP/AlGaInP multiquantum well laser grown by metalorganic chemical vapor deposition

M. Ikeda, A. Toda, K. Nakano, Y. Mori, and N. Watanabe

Appl. Phys. Lett. 50, 1033 (1987); http://dx.doi.org/10.1063/1.97961 (2 pages) | Cited 12 times

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Room‐temperature continuous‐wave (cw) operation of a GaInP/AlGaInP multiquantum well (MQW) laser was achieved for the first time. The threshold current was 70 mA at 22 °C for a device with an 8‐μm‐wide and a 250‐μm‐long planar stripe. The emission wavelength was 668 nm. The characteristic temperature T0 was 138 K under cw operation. The wafer with the MQW structure composed of 100‐Å‐thick GaInP wells and 40‐Å‐thick AlGaInP barrier layers was grown by atmospheric pressure metalorganic chemical vapor deposition.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.45.+h Stimulated emission

Effects of saturation and loss on nonlinear directional couplers

G. I. Stegeman, C. T. Seaton, C. N. Ironside, T. Cullen, and A. C. Walker

Appl. Phys. Lett. 50, 1035 (1987); http://dx.doi.org/10.1063/1.97962 (3 pages) | Cited 20 times

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We show that large changes are introduced into the operational characteristics of nonlinear directional couplers by both loss and saturation of the nonlinearity, especially the latter. Specific numerical examples are given.
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42.79.Gn Optical waveguides and couplers
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Hp Optical processors, correlators, and modulators
42.25.Bs Wave propagation, transmission and absorption

Polarization control in ridge‐waveguide‐laser diodes

Markus‐Christian Amann

Appl. Phys. Lett. 50, 1038 (1987); http://dx.doi.org/10.1063/1.97963 (3 pages) | Cited 4 times

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The polarization dependence of the gain/current relation and threshold current of quasi‐index‐guided laser diodes is analyzed for the case of λ=1.3 μm InGaAsP‐InP ridge‐waveguide lasers. Thereby it is shown that three different regimes for the stripe width and the lateral effective index discontinuity can be distinguished where one modal polarization (TE or TM) predominates. The significance of this finding on laser design and polarization control is discussed, and a comparison is performed on experimental results.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.60.Jb Light-emitting devices

Laser photoablation processes in organosilane thin films

E. E. Marinero and R. D. Miller

Appl. Phys. Lett. 50, 1041 (1987); http://dx.doi.org/10.1063/1.97964 (3 pages) | Cited 9 times

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We report on the excimer laser‐induced photoablation of some organosilane polymers utilizing quartz microbalance techniques to monitor the nature of the ablation phenomenon. A fluence threshold for the ablation process is identified beyond which the material removal rate depends nonlinearly on the adsorbed laser fluence. Below this threshold, photo‐oxidation of the polymer is observed as evidenced by mass uptake of the film. Our results suggest that photoablation of the polysilanes studied is a result of a combination of thermal and photochemical processes.
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79.20.Ds Laser-beam impact phenomena
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
82.50.-m Photochemistry
68.60.Wm Other nonelectronic physical properties

Efficient side lobe suppression of laser diode arrays

James R. Leger, Gary J. Swanson, and Michael Holz

Appl. Phys. Lett. 50, 1044 (1987); http://dx.doi.org/10.1063/1.98258 (3 pages) | Cited 18 times

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An optical technique is described which converts multilobed far‐field patterns from in‐phase laser arrays into a single‐lobed pattern. The technique redistributes the output light from the laser array to produce a uniformly illuminated aperture. This filled aperture produces negligible side lobes, and efficiently channels the array power into the main lobe. Experiments performed on a ten‐element Y‐guide laser array show an increase in main lobe power from 51 to 90% of the total array power.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Model of rf discharges at frequencies greater than the ionic plasma frequency

A. M. Pointu

Appl. Phys. Lett. 50, 1047 (1987); http://dx.doi.org/10.1063/1.97965 (3 pages) | Cited 13 times

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The extension of a previous model using an asymmetrical double‐probe theory is set out to describe rf discharges in the opposite limit of mainly capacitive electrode sheaths. It reasonably agrees with available experimental results for an excitation frequency equal to or greater than 13.56 MHz.
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52.80.Pi High-frequency and RF discharges

Abnormal‐glow‐discharge deposition of tungsten

K. E. Greenberg

Appl. Phys. Lett. 50, 1050 (1987); http://dx.doi.org/10.1063/1.97966 (3 pages)

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α‐tungsten films that adhere well to silicon dioxide were deposited using a dc abnormal‐glow discharge through WF6, H2, and Ar. Film resistivities on the order of 30 μΩ cm and deposition rates as high as 200 Å/min were obtained without heating the substrate externally. X‐ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and transmission electron microscopy measurements indicate that electron scattering at the grain boundaries has limited the conductivity of the plasma‐deposited films. Tungsten films having resistivities within a factor of two times that of bulk tungsten were produced with a two‐step process utilizing plasma and conventional chemical vapor deposition.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.At Metal and metallic alloys
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Implosion of sodium‐bearing capillary‐discharge plasmas for x‐ray laser experiments

F. C. Young, S. J. Stephanakis, V. E. Scherrer, B. L. Welch, G. Mehlman, P. G. Burkhalter, and J. P. Apruzese

Appl. Phys. Lett. 50, 1053 (1987); http://dx.doi.org/10.1063/1.97967 (3 pages) | Cited 16 times

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A NaF plasma from a capillary discharge has been imploded with a 1.2‐MA driving current to produce an intense source of sodium K‐shell x rays. A peak power of 25 GW in a 20‐ns pulse was measured for the sodium He‐α line which can be used as the pump radiation for a Na/Ne XUV laser scheme.
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52.55.Ez Theta pinch
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Dg Plasma sources
42.55.-f Lasers

Tribological and electrical properties of metal‐containing hydrogenated carbon films

H. Dimigen, H. Hübsch, and R. Memming

Appl. Phys. Lett. 50, 1056 (1987); http://dx.doi.org/10.1063/1.97968 (3 pages) | Cited 139 times

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The formation of metal‐containing amorphous hydrogenated carbon films (a‐C:H) in a reactive sputtering process is reported. The layers were prepared at room temperature using various metals of different concentrations. According to tribological measurements the layers exhibit small friction values and an extremely low abrasive wear rate. The electrical conductivity depends on the metal concentration and could be varied over many orders of magnitude.
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68.60.Bs Mechanical and acoustical properties
62.20.Qp Friction, tribology, and hardness
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.Nq Composition and phase identification

Thermal expansion and elastic properties of plasma‐deposited amorphous silicon and silicon oxide films

F. Jansen, M. A. Machonkin, N. Palmieri, and D. Kuhman

Appl. Phys. Lett. 50, 1059 (1987); http://dx.doi.org/10.1063/1.97969 (3 pages) | Cited 5 times

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The thermomechanical properties of amorphous glow‐discharge deposited silicon and silicon oxide films were measured as a function of film composition. Hydrogenated amorphous silicon films, deposited at 250 °C with a density of 2.0 g/cm3 and 20 at. % of hydrogen, exhibit a linear thermal expansion coefficient of about 4.4×10−6/°C and a biaxial elastic modulus of 150 GPa. The expansion coefficient of plasma‐deposited silicon oxide films shows a systematic dependence on the fabrication conditions and ranges from about 10−5/°C to negative values. Strong correlations between the hydrogen concentration of the films, the film density, and thermal expansion coefficient were observed and are discussed. The biaxial elastic modulus of the oxide films is not strongly dependent on the gas ratio and is about 40 GPa, substantially smaller than the values obtained for thermally grown oxides. These differences are attributed to the effect of network terminations by hydrogen and −OH groups.
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68.60.Bs Mechanical and acoustical properties
68.55.Nq Composition and phase identification
65.40.De Thermal expansion; thermomechanical effects

Channeling study of structural effects at the Al(111)/Si(111) interface formed by ionized cluster beam deposition

H.‐S. Jin, A. S. Yapsir, T.‐M. Lu, W. M. Gibson, I. Yamada, and T. Takagi

Appl. Phys. Lett. 50, 1062 (1987); http://dx.doi.org/10.1063/1.97970 (3 pages) | Cited 17 times

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Epitaxial Al(111)/Si(111) films grown by the ionized cluster beam technique have been studied using the high‐energy He+ channeling technique. No observable strain has been detected between the Si substrate and the Al layer despite their large (∼25%) lattice mismatch. Displaced Al atoms have been observed in the Al film, which increases with the depth and reaches 30% near the Al/Si interface. A large step increase of dechanneling occurs at the Al/Si interface which might be accounted for by the existence of ‘‘semicoherent’’ interface in which four Al planes are matched to three Si planes.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.80.Jh Ion radiation effects
68.35.Fx Diffusion; interface formation
68.35.Gy Mechanical properties; surface strains

High quality ZnSe films grown by low pressure metalorganic vapor phase epitaxy using methylalkyls

Toshiya Yokogawa, Mototsugu Ogura, and Takao Kajiwara

Appl. Phys. Lett. 50, 1065 (1987); http://dx.doi.org/10.1063/1.97971 (3 pages) | Cited 17 times

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High quality ZnSe layers have been successfully grown by low pressure metalorganic vapor phase epitaxy (MOVPE) using methylalkyls, dimethylzinc, and dimethylselenide. Streaks and Kikuchi lines were observed by reflective high‐energy electron diffraction measurements. Also the sharp and strong excitonic emission line due to free exciton and no emissions related to deep levels or residual impurities were observed by photoluminescence measurements. These results show that the ZnSe layers are of good crystalline quality. Furthermore, good selective growth of the ZnSe films on structured substrates was easily achieved by using this low pressure MOVPE technique.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.55.Et II-VI semiconductors

Effects of the layer thickness on the electronic character in GaAs‐AlAs superlattices

J. Ihm

Appl. Phys. Lett. 50, 1068 (1987); http://dx.doi.org/10.1063/1.97972 (3 pages) | Cited 84 times

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Realistic tight‐binding calculations for the GaAs‐AlAs superlattice clearly demonstrate that if the GaAs layer thickness is less than ∼30 Å, the lowest conduction‐band state is confined to the AlAs barrier region instead of the GaAs quantum well region resulting in a spatial separation of electrons and holes. This observation exemplifies a failure of the widely used Kronig–Penney model and emphasizes the importance of the k vector selection rule. This property can be used in photoluminescence spectroscopy to determine the band offset of thin layer superlattices for an essentially arbitrary composition of AlxGa1−xAs. A complete two‐dimensional map of the electronic character as a function of the GaAs and the AlAs layer thickness is obtained. The possibility that Xxy states may lie below Xz states for narrow wells is proposed, and implications of the present calculation on interpreting spectroscopic data are discussed.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors

Direct measurement of evaporation during rapid thermal processing of capped GaAs

T. E. Haynes, W. K. Chu, and S. T. Picraux

Appl. Phys. Lett. 50, 1071 (1987); http://dx.doi.org/10.1063/1.97973 (3 pages) | Cited 22 times

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We have directly measured the amounts of arsenic evaporated through very thin encapsulating films during rapid thermal processing (RTP). The evaporated molecules are condensed onto a copper film on a sapphire substrate and subsequently counted using 5 MeV Rutherford backscattering analysis. For 20‐nm‐thick Si, SiO2, and Si3N4 caps, we have determined the temperature ranges for which a 10‐s RTP cycle produces less than 1×1015/cm2 of evaporated As. Preliminary measurements at higher temperatures of the thickness and time dependence of evaporation through SiO2 caps of 20 to 60 nm thicknesses are also presented and discussed in terms of the mechanism of As loss.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
66.30.J- Diffusion of impurities
68.60.Wm Other nonelectronic physical properties
68.35.Fx Diffusion; interface formation

Excitonic and electron‐hole contributions to the spontaneous recombination rate of injected charge carriers in GaAs‐GaAlAs multiple quantum well lasers at room temperature

E. H. Böttcher, K. Ketterer, D. Bimberg, G. Weimann, and W. Schlapp

Appl. Phys. Lett. 50, 1074 (1987); http://dx.doi.org/10.1063/1.97974 (3 pages) | Cited 25 times

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The spontaneous recombination rate at room temperature of GaAs‐GaAlAs multiple quantum well lasers is investigated at carrier densities of 2×1017–1.7×1018 cm−3 using the small‐signal electroluminescence technique. A monomolecular, partly excitonic, and a bimolecular term contribute to the recombination rate R(n)=An+Bn2, where A and B are 2.08×108 s−1 and 1.5×10−10 cm3 s−1, respectively, for a well width Lz =7.5 mm. The radiative and nonradiative contributions to the linear recombination term, A=1/τr+1/τnr, are determined as τr =8 ns and τnr =12 ns from the dependence of the spontaneously emitted light power on the injection current density. In addition the carrier density dependence of the internal quantum efficiency is reported and ηi is found to be close to unity. The results demonstrate that even at fairly high excitation levels, excitonic enhancement of radiative recombination in high quality multiple quantum well structures is an important factor.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.35.-y Excitons and related phenomena
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.60.Hk Cathodoluminescence, ionoluminescence

Optical detection of interwell‐exciton transfer in In0.53Ga0.47As/InP quantum wells grown by chemical beam epitaxy

R. Sauer, T. D. Harris, and W. T. Tsang

Appl. Phys. Lett. 50, 1077 (1987); http://dx.doi.org/10.1063/1.97975 (3 pages) | Cited 10 times

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We use photoluminescence excitation spectroscopy to show that excitons confined to single quantum wells in In0.53Ga0.47As/InP communicate through thin barriers. The experiments are performed on a sample grown by chemical beam epitaxy with four quantum wells of thicknesses between ∼18 and 60 Å separated by barriers as thin as 30 Å. Exciton transfer between adjacent wells is observed.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Mobility degradation in a quantum well heterostructure of a GaAs/AlGaAs prototype

Vijay K. Arora, David S. L. Mui, and H. Morkoç

Appl. Phys. Lett. 50, 1080 (1987); http://dx.doi.org/10.1063/1.97976 (3 pages) | Cited 5 times

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Mobility degradation of a quasi‐two‐dimensional electron gas in a high electric field as shown to arise from the asymmetry in the distribution function of electrons. The critical field for the onset of appreciable mobility degradation is given by ϵ∗=kBT/el=vsat/2μ0, where T is the lattice temperature, l the mean free path, μ0 the low field ohmic mobility, and vsat the saturation velocity. High mobility materials are vulnerable to mobility degradation particularly at low temperature. The effective electron temperature in a protruded distribution undergoes a transition from quadratic to linear behavior as the electric field is increased. This behavior is consistent with the most recent experimentally observed behavior of GaAs/AlGaAs heterostructures and can be usefully applied to the design of devices operating at high electric field.
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73.50.Fq High-field and nonlinear effects
73.50.Dn Low-field transport and mobility; piezoresistance
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Bk General theory, scattering mechanisms

Characterization of multiple in situ junctions in Si‐TaSi2 composites by charge‐collection microscopy

B. G. Yacobi and B. M. Ditchek

Appl. Phys. Lett. 50, 1083 (1987); http://dx.doi.org/10.1063/1.97977 (3 pages) | Cited 9 times

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The depletion zones of in situ metal‐semiconductor junctions in a new class of electronic materials, Si‐TaSi2 eutectic composites, which are comprised of aligned TaSi2 rods permeating a Si matrix, are characterized using charge‐collection scanning electron microscopy. The increase in the depletion width of the individual Schottky junctions as a function of the reverse bias is measured. Results are in agreement with those predicted by a model of cylindrical junctions in a Si matrix. The observed overlap of the depletion zones around adjacent rods suggests possible field‐effect transistor switch applications for this material.
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73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.De Semiconductor-device characterization, design, and modeling
85.60.Dw Photodiodes; phototransistors; photoresistors

Vibrational characteristics of acceptor‐hydrogen complexes in silicon

Michael Stavola, S. J. Pearton, J. Lopata, and W. C. Dautremont‐Smith

Appl. Phys. Lett. 50, 1086 (1987); http://dx.doi.org/10.1063/1.97978 (3 pages) | Cited 86 times

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Acceptor‐hydrogen complexes for the group III acceptors, B, Al, and Ga, in Si have been studied with low‐temperature infrared spectroscopy. The Si‐H stretching band narrows dramatically upon cooling to low temperature thereby aiding the detection of the vibrations of the Al and Ga acceptor‐H complexes. The frequency 2201 cm−1 we have measured for the Al‐H complex is in reasonable agreement with the prediction made by G. G. DeLeo and W. B. Fowler [Phys. Rev. B 31, 6861 (1985)] (2220 cm−1 for a 〈111〉 interstitial configuration for the H). Assignment of the new vibrational bands is confirmed by isotopic substitution. The strength of the absorption provides evidence that the passivation is not the result of compensation alone and that a major fraction of the passivated acceptors result in acceptor‐H complexes. A new, low‐energy excitation of the acceptor‐hydrogen complexes gives rise to a sideband to the main stretching vibration and explains the pronounced energy shift and narrowing of the spectra upon cooling to He temperature.
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71.55.Ht Other nonmetals
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.30.Hv Other nonmetallic inorganics
61.72.J- Point defects and defect clusters

Dislocation gettering in semi‐insulating GaAs investigated by cathodoluminescence

Jian Ding, James S. C. Chang, and Marina Bujatti

Appl. Phys. Lett. 50, 1089 (1987); http://dx.doi.org/10.1063/1.97979 (3 pages) | Cited 10 times

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The cathodoluminescence (CL) imaging technique is applied to the characterization of semi‐insulating GaAs substrates after an extrinsic gettering treatment. A reverse contrast CL image is found for the gettered material. This study provides evidence for the physical mechanism taking place in the gettering process and contributes to the understanding of the effect of dislocations on device performance.
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61.72.Yx Interaction between different crystal defects; gettering effect
78.60.Hk Cathodoluminescence, ionoluminescence
81.40.Rs Electrical and magnetic properties related to treatment conditions
85.30.Tv Field effect devices

New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices

B. F. Levine, K. K. Choi, C. G. Bethea, J. Walker, and R. J. Malik

Appl. Phys. Lett. 50, 1092 (1987); http://dx.doi.org/10.1063/1.97928 (3 pages) | Cited 283 times

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We demonstrate a novel 10.8 μm superlattice infrared detector based on doped quantum wells of GaAs/AlGaAs. Intersubband resonance radiation excites an electron from the ground state into the first excited state, where it rapidly tunnels out producing a photocurrent. We achieve a narrow bandwidth (10%) photosensitivity with a responsivity of 0.52 A/W and an estimated speed of 30 ps.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors
73.40.Gk Tunneling

Thin silicon oxides grown by low‐temperature rf plasma anodization and deposition

S. A. Nelson and R. A. Buhrman

Appl. Phys. Lett. 50, 1095 (1987); http://dx.doi.org/10.1063/1.97929 (3 pages) | Cited 11 times

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We have studied the low‐temperature (<500 °C) growth and deposition of thin silicon oxides in an rf plasma system. Oxides were grown by plasma anodization, sputter deposition, and combinations of these two processes. The oxides were electrically characterized with high‐frequency and low‐frequency capacitance‐voltage techniques and the quality was found to depend strongly on plasma process parameters. In particular, we found strong dependences on bias current, plasma potential, and oxygen partial pressure. Under presently optimal conditions we have fabricated oxides with oxide charge densities Qox<1×1011 charges/cm2, interface state densities Dss<2×1011 states/cm2/eV, and breakdown fields Eb>13 MV/cm. Finally, we have studied the reduction of fast surface states in the plasma oxides by rapid thermal annealing.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Electroabsorption in GaAs/AlGaAs coupled quantum well waveguides

M. N. Islam, R. L. Hillman, D. A. B. Miller, D. S. Chemla, A. C. Gossard, and J. H. English

Appl. Phys. Lett. 50, 1098 (1987); http://dx.doi.org/10.1063/1.97930 (3 pages) | Cited 93 times

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A novel GaAs/AlGaAs coupled quantum well structure, consisting of two 46 Å wells separated by a 11.5 Å barrier, was embedded in a leaky waveguide. Polarization anisotropy and quantum‐confined Stark effect absorption changes are observed, and a 14:1 modulator is demonstrated operating at the peak of the first light‐hole transition. Although the lowest energy transitions behave as predicted by tunneling resonance calculations, higher energy states exhibit unusual behavior due to valence‐band mixing.
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78.20.Jq Electro-optical effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.79.Gn Optical waveguides and couplers
71.35.-y Excitons and related phenomena
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